CN104459212A - Test head module - Google Patents

Test head module Download PDF

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Publication number
CN104459212A
CN104459212A CN201410761022.XA CN201410761022A CN104459212A CN 104459212 A CN104459212 A CN 104459212A CN 201410761022 A CN201410761022 A CN 201410761022A CN 104459212 A CN104459212 A CN 104459212A
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China
Prior art keywords
measuring head
interfacial material
thermal interfacial
head module
thermal
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CN201410761022.XA
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CN104459212B (en
Inventor
蔡国英
张文远
余玉龙
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Shanghai Zhaoxin Semiconductor Co Ltd
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VIA Alliance Semiconductor Co Ltd
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Publication of CN104459212A publication Critical patent/CN104459212A/en
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Abstract

The invention discloses a test head module, comprising: the test head comprises at least one notch arranged on the working surface of the test head; and a thermal interface material embedded in the recess, wherein a solid-liquid phase transition temperature of the thermal interface material is between an operating temperature of the test head module and a melting point of the test head. The invention also provides a method of refurbishing a test head module.

Description

Measuring head module
Technical field
The present invention relates to a kind of measuring head module, and particularly relate to a kind of measuring head module comprising the thermal interfacial material can reinventing shape.
Background technology
In the manufacture process of electronic component (such as, integrated circuit component, chip or tube core etc.), usually can use electronic component testing apparatus, with the performance of testing electronic element or function.
Existing electronic component testing apparatus generally comprises contact arm (handler), in order to adsorb and to transport electronic component.The top of this contact arm is provided with measuring head module.In order to make electronic component test within specified temperatures, the temperature regulator in measuring head module is utilized to carry out temperature control.In addition, in order to promote contact adherence between measuring head and electronic component and heat conductivity (thermal conductivity), thermal interfacial material (thermal interface material, TIM) can be set between measuring head and electronic component.
Contact with electronic component repeatedly along with thermal interfacial material and peel off, the surface of thermal interfacial material can produce scar or defect.Thus, between thermal interfacial material and electronic component, good contact and heat transfer cannot be produced, and then precisely cannot control the probe temperature of electronic component.For avoiding the problems referred to above, usually after specific access times, thermal interfacial material can be eliminated old for new service.But, will the raising of production cost be caused thus.Therefore need in the art to seek further improvement.
Summary of the invention
For solving the problem, one embodiment of the invention disclose a kind of measuring head module, comprising: measuring head, comprise the workplace that at least one recess is arranged at measuring head; And thermal interfacial material, be embedded in recess, wherein solid phase-liquid phase the inversion temperature of thermal interfacial material is between the operating temperature and the fusing point of measuring head of measuring head module.
For above and other object of the present invention, feature and advantage can be become apparent, cited below particularly go out preferred embodiment, be described in detail below:
Accompanying drawing explanation
Fig. 1 is the measuring head module of some embodiments of the present invention and the diagrammatic cross-section of chip packing-body;
Fig. 2 A-Fig. 2 C is the diagrammatic cross-section in each manufacture craft stage measuring head module redressed of some embodiments of the present invention;
Fig. 3 A-Fig. 3 B is the diagrammatic cross-section of the mould of some embodiments of the present invention;
Fig. 4 is the diagrammatic cross-section that the process of some embodiments of the present invention redresses the measuring head module of step;
Fig. 5 is the diagrammatic cross-section of the measuring head module of some embodiments of the present invention;
Fig. 6 A-Fig. 6 C is the diagrammatic cross-section of the measuring head module of some embodiments of the present invention.
Symbol description
100 ~ measuring head module
102 ~ measuring head
102S ~ workplace
104 ~ temperature regulator
106 ~ diffused barrier layer
108 ~ pressure governor
110,110a, 110b ~ thermal interfacial material
110S ~ operating surface
120,120a, 120b ~ recess
120V ~ right angle
120X ~ salient angle
120Y ~ corner cut
120Z ~ fillet
122,124a, 124b ~ depressed part
140 ~ mould
140S ~ die surface
142a, 142b ~ teat
150 ~ chip packing-body
152 ~ substrate
154 ~ chip
156 ~ external electrical connection
158 ~ underfill
160 ~ internal electrical connecting portion
200 ~ first direction
300 ~ molding step
T1, T2 ~ thickness
Embodiment
For making above and other object of the present invention, feature, advantage become apparent, cited below particularly go out preferred embodiment, and coordinate appended by accompanying drawing, be described in detail below.But, have in any art usually know the knowledgeable to will understand that in the present invention various feature structure only for illustration of, not according to scaling.In fact, in order to make explanation more clear, the relative size ratio of various feature structure can be increased and decreased arbitrarily.In instructions full text and institute's drawings attached, identical reference number refers to identical feature structure.
The many different implementation methods of following discloses or example carry out different characteristic of the present invention, below describe the embodiment of concrete element and arrangement thereof to set forth the present invention.Certainly these embodiments are only in order to illustrate and should not limit scope of the present invention with this.Such as, mentioning fisrt feature is in the description formed on second feature, it comprises fisrt feature with second feature is the embodiment directly contacted, also the embodiment having other features between fisrt feature and second feature is in addition included in addition, that is, fisrt feature and second feature non-direct contact.
A kind of method that the invention provides measuring head module and redress, Fig. 1 shows according to the measuring head module 100 of some embodiments of the present invention and the diagrammatic cross-section of chip packing-body 150.
Please refer to Fig. 1, chip packing-body 150 comprises substrate 152, chip 154, external electrical connection 156, underfill 158 and internal electrical connecting portion 160.The upper surface that chip 154 is formed at substrate 152 is electrically connected with substrate 152 by internal electrical connecting portion 160.External electrical connection 156 is formed on the lower surface of substrate 152, in order to be electrically connected substrate 152 to external circuit (circuit board such as tested).Underfill 158 is formed between substrate 152 and chip 154, in order to the relative position of fixing base 152 with chip 154.Although it is noted that in the accompanying drawings, chip packing-body 150 comprises two chips 154.But in other embodiments, chip packing-body 150 can comprise the chip of a chip or more than three.
Still please refer to Fig. 1, measuring head module 100 comprises measuring head 102, temperature regulator 104, pressure governor 108, the thermal interfacial material 110 with recess 120 and is embedded in recess 120, and thermal interfacial material 110 has operating surface 110S in the direction in the face of chip packing-body 150.In the present embodiment, also can comprise optionally (optional) diffused barrier layer 106 to be arranged between measuring head 102 and thermal interfacial material 110.Before carrying out testing procedure, measuring head module 100 moves along first direction 200 towards chip packing-body 150, as shown in Figure 1.When carrying out testing procedure, wherein the thermal interfacial material 110 of measuring head module 100 is aimed at and the chip 154 of direct contact chip packaging body 150.
When carrying out testing procedure, pressure governor 108 applies a pressure to measuring head 102, to guarantee the contact adherence of thermal interfacial material 110 and chip 154.Pressure governor 108 can comprise any pressue device, is not described in detail in this.
When carrying out testing procedure, temperature regulator 104 can apply a heat energy to chip 154, for implementing testing procedure under specific operating temperature.This operating temperature is different with test event and chip kind, and in certain embodiments, operating temperature is between 25-130 DEG C.In further embodiments, operating temperature can between 70-90 DEG C.After testing procedure terminates, temperature regulator 104 can remove heat energy from chip 154, for cooled wafer 154.Temperature regulator 104 can comprise the combination of any well heater and refrigeratory, also no longer describes in detail at this.
Measuring head 102 has a workplace 102S in the direction in the face of chip packing-body 150.As shown in Figure 1, the workplace 102S of measuring head 102 is arranged in order to the recess 120 of accommodating thermal interfacial material 110.When carrying out testing procedure, because measuring head 102 need bear from the pressure of pressure governor 108 and the heat energy from temperature regulator 104, therefore measuring head 102 can select dystectic hard metal.In certain embodiments, the material of measuring head 102 can comprise alloy or the combination of copper, steel, tungsten, other suitable metal materials or above-mentioned material.In certain embodiments, the fusing point of measuring head 102 is between 1000-1600 DEG C.
When carrying out testing procedure, the upper surface of the direct contact chip 154 of operating surface 110S of thermal interfacial material 110.The major function of thermal interfacial material 110 is, by contact transferring heat energy, to make heat energy import chip 154 or derive from chip 154.Therefore, thermal interfacial material 110 possesses excellent heat conductivity usually, and preferably has good contact adaptation between its operating surface 110S and chip 154 upper surface.
In the prior art, the workplace of measuring head is a smooth surface, and thermal interfacial material physically fixes (such as, thermal interfacial material is aluminium foil and coated measuring head) on this workplace.In certain embodiments, above-mentioned physically fixing also can be glued on this workplace with polymkeric substance by thermal interfacial material, but this mode may reduce heat transfer usefulness.In other embodiments, also by direct for measuring head contact measured thing, and thermal interfacial material can not configured.Known thermal interfacial material can comprise macromolecule heat sink material (such as resene heat radiation paster or thermal grease), hard metal material (such as metal block material or sheet material) or soft metal material (such as metal forming).But these thermal interfacial materials above-mentioned respectively have its own shortcoming.Such as: comparatively metal is poor for the heat conductivity of macromolecule heat sink material, cannot control operation temperature accurately, or the operating temperature of specifying cannot be reached at short notice.Moreover macromolecule heat sink material quality is soft compared with metal, after life cycle for several times, its operating surface can cause distortion because of pressure, cause the contact adaptation of thermal interfacial material and chip to be deteriorated, and therefore constantly old for new service eliminated by pottery.In addition, under the operating temperature of testing procedure, macromolecule heat sink material may melting or decomposition because being heated, and then attaches to chip surface and pollute.On the other hand, because the multiple chips be positioned on chip packing-body can produce height error in the fabrication process usually, the upper surface of also not all chip is caused all to have identical level height.Moreover based on the demand of design, the chip be positioned on same chip packaging body also may have different thickness.For hard metal material, its skin hardness is high and do not have a pliability, and therefore its operating surface cannot produce good contact with each chip, and chip packing-body will be caused to be heated inequality.Moreover, if make hard metal material contact with chip good and apply excessive pressure, will cause chip generation slight crack or breakage.In addition, the surface of hard metal material, once produce damage or distortion, namely needs monoblock (sheet) to change, so will improve manufacture craft cost.In addition, although soft metal material has heat conductivity and pliability concurrently, due to its very thin thickness, after life cycle for several times, its operating surface can cause distortion, wearing and tearing or perforation because of pressure, constantly eliminate trade-in, also have harmful effect to manufacture craft cost.
For solving the problem, the present invention proposes a kind of thermal interfacial material that can be again moulding, and its solid phase-liquid phase inversion temperature is between the operating temperature and the fusing point of measuring head of measuring head module.Be described in detail as follows.
In the present invention, solid phase-liquid phase the inversion temperature of thermal interfacial material 110 must be greater than the operating temperature of measuring head module, so can make thermal interfacial material 110 under the operating temperature of testing procedure, maintain the state of solid phase, and then avoid polluting chip 154 or whole chip packing-body 150.Moreover, solid phase-liquid phase the inversion temperature of thermal interfacial material 110 must be less than the fusing point of measuring head 102, thus, can under the prerequisite not affecting measuring head 102 shape, carry out moulding to thermal interfacial material 110, when particularly carrying out moulding or again moulding for the first time to the operating surface 110S of thermal interfacial material 110, temperatures involved measuring head 102 shape can be avoided.
In certain embodiments, first moulding step can comprise thermal interfacial material 110 is heated to liquid phase or molten condition after insert in recess 120, then thermal interfacial material 110 is cooled to the state of solid phase and makes it formalize.In other embodiments, first moulding step can comprise the thermal interfacial material 110 of solid phase to insert in recess 120 and is heated to liquid phase or molten condition again, then again thermal interfacial material 110 is cooled to the state of solid phase and makes it formalize.After aforesaid moulding step, thermal interfacial material 110 compliance ground (conformally) is embedded in recess 120, as shown in Figure 1.It should be noted that above-mentioned first moulding step refers to step thermal interfacial material 110 being embedded in empty recess 120.
Thermal interfacial material 110 can include, but is not limited to metal, thermal plastic high polymer containing thermal conductivity inserts, phase-transition material or above-mentioned combination.The metal be applicable to is indium (In), plumbous (Pb), tin (Sn), silver (Ag), lithium (Li), cadmium (Cd), zinc (Zn), aluminium (Al), magnesium (Mg), polonium (Po), bismuth (Bi) or above-mentioned alloy etc. such as.Particularly, if the solid phase of above-mentioned simple metal-liquid phase inversion temperature too high (such as: fine silver, fine aluminium, pure magnesium), operational inconvenience may be caused, mode now by synthesizing alloy with other Metal Melting forms thermal interfacial material 110, to reduce the solid phase-liquid phase inversion temperature of Integral alloy, and make the solid phase-liquid phase inversion temperature of thermal interfacial material 110 between the operating temperature and the fusing point of measuring head 102 of measuring head module.In addition, the thermal plastic high polymer be applicable to can comprise, such as: polyimide (poly imide, PI) etc.The thermal conductivity inserts be applicable to can comprise, such as: indium, lead, tin, silver, lithium, cadmium, zinc, aluminium, magnesium, copper, gold, platinum or above-mentioned alloy etc.In certain embodiments, thermal interfacial material 110 is indium or indium alloy.
It is noted that the needs of the solid phase of thermal interfacial material 110-visual practical application of liquid phase inversion temperature and selecting, as long as this solid phase-liquid phase inversion temperature is between the operating temperature and the fusing point of measuring head 102 of measuring head module.In certain embodiments, operating temperature is between 70-90 DEG C, and the fusing point of measuring head 102 is about 1600 DEG C, and therefore solid phase-liquid phase the inversion temperature of thermal interfacial material 110 can between about 90-1600 DEG C.In other embodiments, operating temperature is between 25-130 DEG C, and the fusing point of measuring head 102 is about 1100 DEG C, and therefore solid phase-liquid phase the inversion temperature of thermal interfacial material 110 can between about 130-1100 DEG C.For saving energy needed for moulding step and time, the solid phase-liquid phase inversion temperature of thermal interfacial material 110 can between about 130-360 DEG C.
During the moulding step of thermal interfacial material 110, easily there is atom between measuring head 102 and thermal interfacial material 110 and exchange or chemical reaction.Thus, intermetallic compound (intermetalliccompound, IMC) will be produced, and then cause the chemical composition of measuring head 102 and thermal interfacial material 110 and physicochemical characteristics to be changed.
In order to avoid the generation of intermetallic compound, can optionally (optionally) diffused barrier layer 106 be arranged between measuring head 102 and thermal interfacial material 110, as shown in Figure 1.The fusing point of diffused barrier layer 106 can higher than the solid phase of thermal interfacial material 110-liquid phase inversion temperature.Thus, in the moulding step of thermal interfacial material 110, diffused barrier layer 106 can not cause distortion because being heated.Moreover diffused barrier layer 106 can be selected does not have any chemically active material for measuring head 102 and thermal interfacial material 110.Thus, can avoid producing intermetallic compound, and then keep measuring head 102 and the original chemical composition of thermal interfacial material 110 and physicochemical characteristics.
Can utilize suitable manufacture craft by suitable material compliance be deposited on recess 120 bottom and sidewall on, to form diffused barrier layer 106 in recess 120.Suitable diffused barrier layer 106 material can comprise titanium, tantalum, titanium nitride, tantalum nitride, titanium-zirconium alloy, titanium nitride zirconium, nickel, nickel-vanadium alloy or above-mentioned combination.Suitable manufacture craft can comprise physical vapour deposition (PVD) (PVD), chemical vapor deposition (CVD), metal organic chemical vapor deposition (MOCVD), sputter (sputter) or above-mentioned combination.
In addition, alligatoring (texturing) process can be carried out towards the surface of thermal interfacial material 110 to diffused barrier layer 106, to form various microstructure (not illustrating in figure), promote the tackness between measuring head 102 and thermal interfacial material 110 thus.For example, microstructure can comprise the raised or sunken microstructure of the circular cone, pyrometric cone, quadrangular pyramid, dome bell cone, cylinder, hemisphere, cube etc. of periodic arrangement, and the spacing between the three-dimensional size of each microstructure and adjacent microstructures can be micron order or grade.Suitable roughening treatment can comprise Wet-type etching or dry-etching, also can be the alligatoring mode of impression (embossing) or other physical properties.Because the surface of diffused barrier layer 106 has microstructure, contact area and the bonding strength of diffused barrier layer 106 and thermal interfacial material 110 therefore can be increased.
The present invention also provides a kind of method measuring head module redressed, and Fig. 2 A-Fig. 2 C is the diagrammatic cross-section in each manufacture craft stage measuring head module redressed shown according to some embodiments of the present invention.For simplicity, be wherein same as the parts of Fig. 1, will identical label used and repeat no more.
After life cycle repeatedly, the operating surface 110S of thermal interfacial material 110 can cause distortion because of pressure.Please refer to Fig. 2 A, the operating surface 110S of thermal interfacial material 110 produces depressed part 122.Depressed part 122 may cause thermal interfacial material 110 to be deteriorated with the contact adaptation of chip.As previously mentioned, in the prior art, no matter use any thermal interfacial material, once the operating surface of thermal interfacial material cannot contact with chip is closely sealed because of distortion, just must eliminate trade-in and cannot reuse.
In order to extend the serviceable life of thermal interfacial material 110, and reach reusable object, the present invention also provides a kind of method measuring head module redressed.Please refer to Fig. 2 B, in the present embodiment, the method that measuring head module redresses is comprised the following steps:
A () heating is with melting heat boundary material;
B () provides mould to thermal interfacial material;
C () applies pressure, with die casting (coining) thermal interfacial material;
(d) heat of cooling boundary material; And
E () removes mould.
In step (a), thermal interfacial material 110 is heated to a temperature, and makes thermal interfacial material 110 present liquid phase or molten condition, in order to carrying out follow-up again moulding step.In certain embodiments, said temperature is approximately the solid phase-liquid phase inversion temperature of thermal interfacial material 110, and makes thermal interfacial material 110 present liquid phase or molten condition.As previously mentioned, solid phase-liquid phase inversion temperature due to thermal interfacial material 110 is less than the fusing point of measuring head 102 and diffused barrier layer 106, even if therefore thermal interfacial material 110 is heated to liquid phase or molten condition, the shape of measuring head 102 and diffused barrier layer 106 also can not be changed.Moreover, due to the inactivity of diffused barrier layer 106, therefore can not produce intermetallic compound, also can not change measuring head 102 and the original chemical composition of thermal interfacial material 110 and physicochemical characteristics.
In step (b) and (c), provide the operating surface 110S that mould 140 contacts thermal interfacial material 110, and apply pressure and carry out die casting (coining) step 300, for thermal interfacial material 110 is again moulding.As shown in Figure 2 B, when carrying out die casting (coining) step 300, mould 140 moves towards thermal interfacial material 110, directly contacts with the operating surface 110S of thermal interfacial material 110 for making the surperficial 140S of mould 140.Should be apprehensible, can not be out of shape in die casting (coining) step in order to ensure mould 140, the fusing point of mould 140 is also greater than the solid phase of thermal interfacial material 110-liquid phase inversion temperature.
In step (d) and (e), after heat of cooling boundary material 110 makes it formalize, i.e. removable mould 140.As shown in Figure 2 C, after the step that redresses, can become smooth by again moulding for the operating surface 110S of thermal interfacial material 110 and not there is the surface of any depressed part.
As shown in figures 2 a-c, in the step redressed of the present embodiment, measuring head 102 is taken off, utilize other heating arrangement and pressue device heat thermal interfacial material 110 and pressurize.It is noted that in other embodiments, also measuring head 102 can not be taken off, directly utilize the temperature regulator 104 of Fig. 1 to carry out heating and cooling, and directly utilize the pressure governor 108 of Fig. 1 to apply pressure, to carry out the above-mentioned step redressed.
Fig. 3 A is the diagrammatic cross-section of the mould 140 shown according to some embodiments of the present invention.Please refer to Fig. 3 A, in the present embodiment, mould 140 has smooth surperficial 140S, therefore can have the operating surface 110S surface that moulding one-tenth is smooth again of depressed part 122.
But, in other embodiments, the operating surface 110S of thermal interfacial material 110 also can coordinate the chip surface profile on packaging body to carry out moulding, to reach the object (during the chip particularly packaging body having multiple height different) of fully laminating, therefore, the mould 140 used also can have uneven surperficial 140S, for the shape (as shown in Figure 3 B) of the operating surface 110S moulding one-tenth chip surface profile complementation by thermal interfacial material 110.In figure 3b, mould 140 has convex-concave surface 140S, and wherein convex-concave surface 140S comprises teat 142a and 142b of two differing heights.In the present embodiment, the mould 140 with convex-concave surface 140S is utilized to carry out the above-mentioned step redressed, can by the shape of the operating surface 110S of thermal interfacial material 110 again moulding one-tenth and surperficial 140S complementation.Below invent an embodiment to be illustrated.
Fig. 4 is the diagrammatic cross-section that the process shown according to some embodiments of the present invention redresses the measuring head module of step.Measuring head module in Fig. 4 utilize as Fig. 3 B the mould 140 that illustrates carry out redressing step.Be simplicity of illustration herein, only show measuring head 102 in the diagram.As shown in Figure 4, to depressed part 124a and 124b of two different depths be had through again moulding operating surface 110S, wherein the degree of depth of these depressed parts be same as convex-concave surface 140S (as Fig. 3 B illustrate) the height of teat 142a and 142b.Herein for simplifying accompanying drawing, the teat only showing two differing heights is formed on convex-concave surface 140S.But, have in this area and usually know that the knowledgeable should understand, any amount can be formed on convex-concave surface 140S and there is teat and/or the depressed part of arbitrary shape.In other words, the operating surface 110S of thermal interfacial material 110 is not limited to smooth surface, and operating surface 110S also can comprise the convex-concave surface of the teat with any quantity and shape.
It should be noted that, for the same chip packaging body of chip with differing heights, or highly different multiple chip packing-bodies, prior art only can use the thermal interfacial material of quality dead-soft (such as, macromolecule heat sink material), otherwise cannot test in the testing procedure of same batch.But for the macromolecule heat sink material of quality dead-soft, comparatively the hard heat sink material such as metal is poor for its heat conductivity.But, according to section Example of the present invention, use the mould with convex-concave surface, according to the demand of application, can at random adjust the surface undulation (topology) of the operating surface of thermal interfacial material.Thus, even use heat conductivity preferably but the harder metal of quality as thermal interfacial material, for the same chip packaging body of chip with differing heights, or highly different multiple chip packing-bodies, also can test in the testing procedure of same batch.
Fig. 5 illustrates the diagrammatic cross-section of the measuring head module of another embodiment of the present invention.As shown in Figure 5, the workplace 102S of measuring head 102 can arrange two recess 120a and 120b.The thermal interfacial material 110a thickness be embedded in recess 120a is T1, and the thermal interfacial material 110b thickness be embedded in recess 120b is T2, and wherein T2 is greater than T1, and thermal interfacial material 110a is different from thermal interfacial material 110b.In the present embodiment, measuring head 102 divides into the test zone of two independent operations, and utilizes material and the difference in thickness of thermal interfacial material, and these two test zones are controlled in different operating temperatures.Therefore, it is possible to carry out the testing procedure of different operating temperature in the testing procedure of same batch.Herein for simplifying accompanying drawing, only show two recesses.But have in this area and usually know that the knowledgeable should understand, the needs of visual test form any amount and have the recess of suitable shape, with the chip of corresponding institute pretest on the workplace 102S of measuring head 102.
As from the foregoing, according to section Example of the present invention, can, according to the demand of application, the thermal interfacial material comprising different materials and/or thickness be embedded in each recess respectively, for same measuring head is divided into multiple test zone.Thus, the flexibility ratio (flexibility) of testing procedure can be increased, also can save time and the cost of testing procedure.
It should be noted that, although the recess 120 that Fig. 1-Fig. 5 illustrates has a right angle 120V (being only illustrated in Fig. 5) in the sidewall edge (lip top) of workplace 102S, but in other embodiments, recess 120 can comprise other shapes (as shown in Fig. 6 A-Fig. 6 C) in the sidewall edge of workplace 102S.Fig. 6 A-Fig. 6 C illustrates the diagrammatic cross-section of the measuring head module of other embodiments of the present invention.Be simplicity of illustration herein, only show measuring head 102.From Fig. 6 A-Fig. 6 C, recess 120 can have in the sidewall edge of workplace 102S, such as: salient angle (as shown in Figure 6A), corner cut (as shown in Figure 6B) or fillet (as shown in Figure 6 C).Illustrate further, in fig. 6, recess 120 has salient angle 120X in the sidewall edge of workplace 102S.Salient angle 120X contributes to physical property stationary heat boundary material 110, and thermal interfacial material 110 can not be come off in self-test 102.In Fig. 6 B and Fig. 6 C, recess 120 has corner cut 120Y and fillet 120Z respectively in the sidewall edge of workplace 102S.Corner cut 120Y and fillet 120Z makes the outside bore of recess 120 be greater than inner bore, is beneficial to mould 140 and enters in recess 120 in die casting (coining) step.
The present invention proposes a kind of measuring head module comprising the thermal interfacial material can reinventing shape, wherein can reinvent the solid phase-liquid phase inversion temperature of the thermal interfacial material of shape between the operating temperature and the fusing point of measuring head of measuring head module.The present invention also proposes a kind of method measuring head module redressed, and measuring head module comprises above-mentioned thermal interfacial material that can be again moulding, makes thermal interfacial material melting, and use mould and strained operating surface is again moulding by heating.
Be compared to prior art, the measuring head module comprising the thermal interfacial material can reinventing shape provided by the present invention and the method redressed, at least have following advantage:
(1) thermal interfacial material provided by the present invention is after distortion or wearing and tearing, by heating and die casting (coining) step again moulding, do not need often to eliminate trade-in, therefore can significantly improve the serviceable life of thermal interfacial material and save cost.
(2) step redressed provided by the present invention, the temperature regulator in proving installation and pressure governor directly can be utilized thermal interfacial material heating, cooling and pressurize, high with existing survey control equipment compatibility, do not need amendment or buy more extras.Therefore, extra-pay can not be produced.
(3) in the step redressed, the mould with flat surfaces or convex-concave surface can optionally be used.Therefore, it is possible to according to the demand applied, at random adjust the surface undulation (topology) of the operating surface of thermal interfacial material.For the same chip packaging body of chip with differing heights, or highly different multiple chip packing-bodies, also can test in the testing procedure of same batch.
(4) according to the demand of application, same measuring head can be divided into multiple test zone.Therefore, the flexibility ratio of testing procedure can be increased, also can save time and the cost of testing procedure.
(5) when the composition of thermal interfacial material or chemical property change (such as, thermal interfacial material is oxidized), only need to be heated melting, can take out in self-test head easily.In addition, when measuring head damage or eliminate change time, if thermal interfacial material still can use and not go bad, also thermal interfacial material heating and melting can be taken out, reinstall to put on new measuring head and reuse.For the thermal interfacial material of cost intensive, this recycling step can reduce the expense expenditure purchasing thermal interfacial material.
In sum, the measuring head module comprising the thermal interfacial material can reinventing shape provided by the present invention and the method redressed, significantly can promote the serviceable life of thermal interfacial material, and flexibility ratio, the efficiency of testing procedure can be improved, and then time needed for testing procedure of reduction and expense.
Although disclose the present invention in conjunction with above several preferred embodiment; but itself and be not used to limit the present invention; have in any art and usually know the knowledgeable; without departing from the spirit and scope of the present invention; can do arbitrary change and retouching, what therefore protection scope of the present invention should define with the claim of enclosing is as the criterion.

Claims (12)

1. a measuring head module, comprising:
Measuring head, comprises the workplace that at least one recess is arranged at this measuring head; And
Thermal interfacial material, is embedded in this at least one recess, and wherein solid phase-liquid phase the inversion temperature of this thermal interfacial material is between an operating temperature and the fusing point of this measuring head of this measuring head module.
2. measuring head module as claimed in claim 1, wherein this thermal interfacial material comprises metal.
3. measuring head module as claimed in claim 2, wherein this metal comprises indium, lead, tin, silver, lithium, cadmium, zinc, aluminium, magnesium, polonium, bismuth or above-mentioned alloy.
4. measuring head module as claimed in claim 1, wherein this thermal interfacial material comprises the thermal plastic high polymer containing thermal conductivity inserts.
5. measuring head module as claimed in claim 4, wherein this thermal plastic high polymer comprises polyimide.
6. measuring head module as claimed in claim 4, wherein this thermal conductivity inserts comprises indium, lead, tin, silver, lithium, cadmium, zinc, aluminium, magnesium, copper, gold, platinum or above-mentioned alloy.
7. measuring head module as claimed in claim 1, wherein this thermal interfacial material comprises metal, containing the thermal plastic high polymer of thermal conductivity inserts, the combination of phase-transition material.
8. measuring head module as claimed in claim 1, also comprises diffused barrier layer, is arranged between this measuring head and this thermal interfacial material, and wherein the fusing point of this diffused barrier layer is higher than the solid phase-liquid phase inversion temperature of this thermal interfacial material.
9. measuring head module as claimed in claim 8, wherein this diffused barrier layer comprises titanium, tantalum, titanium nitride, tantalum nitride, titanium-zirconium alloy, titanium nitride zirconium, nickel, nickel-vanadium alloy or above-mentioned combination.
10. measuring head module as claimed in claim 8, the surface that wherein this diffused barrier layer contacts with this thermal interfacial material has microstructure, and wherein to comprise the circular cone, pyrometric cone, quadrangular pyramid, dome bell cone, cylinder, hemisphere, cube etc. of periodic arrangement raised or sunken for this microstructure.
11. measuring head modules as claimed in claim 1, wherein this at least one recess has a corner cut, fillet or salient angle in the sidewall edge of this workplace.
12. measuring head modules as claimed in claim 1, wherein this thermal interfacial material comprises an operating surface, and wherein this operating surface comprises and has depressed part, teat or above-mentioned combination.
CN201410761022.XA 2014-12-05 2014-12-11 Test head module Active CN104459212B (en)

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TW103142297A TWI564578B (en) 2014-12-05 2014-12-05 Test head module and reconditioning method thereof

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113163594A (en) * 2020-01-07 2021-07-23 峻立科技股份有限公司 Method for combining plastic component and circuit board

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI752563B (en) * 2020-07-24 2022-01-11 鴻勁精密股份有限公司 Connecting apparatus and handler having the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003027686A2 (en) * 2001-09-27 2003-04-03 Advanced Micro Devices, Inc. Method and apparatus for temperature control of a device during testing
JP2005079253A (en) * 2003-08-29 2005-03-24 Tokyo Electron Ltd Inspection method and inspection apparatus
CN101809454A (en) * 2007-10-31 2010-08-18 株式会社爱德万测试 Abnormality detecting device for detecting abnormality of contact section of contact arm
CN102520742A (en) * 2011-11-10 2012-06-27 致茂电子(苏州)有限公司 Temperature regulation and control system for detecting platform
CN101989584B (en) * 2009-07-31 2012-07-04 国际商业机器公司 Method for increasing the thermal coupling heat radiation and reliability of a cooling module
TW201425563A (en) * 2007-09-11 2014-07-01 Dow Corning Composite, thermal interface material containing the composite, and methods for their preparation and use

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3803058B2 (en) * 2001-12-11 2006-08-02 信越化学工業株式会社 Thermally conductive silicone composition, cured product thereof, laying method, and heat dissipation structure of semiconductor device using the same
US7252877B2 (en) * 2003-02-04 2007-08-07 Intel Corporation Polymer matrices for polymer solder hybrid materials
CN2916925Y (en) * 2006-05-15 2007-06-27 致茂电子股份有限公司 Contact device for testing electronic component
CN201007722Y (en) * 2006-12-27 2008-01-16 中茂电子(深圳)有限公司 Semiconductor component testing table with flexible buffering heat conduction foundation
TW200936028A (en) * 2008-02-05 2009-08-16 Thermoshuttle Co Ltd Thermal module and system applied the phase-change metal thermal interface material

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003027686A2 (en) * 2001-09-27 2003-04-03 Advanced Micro Devices, Inc. Method and apparatus for temperature control of a device during testing
JP2005079253A (en) * 2003-08-29 2005-03-24 Tokyo Electron Ltd Inspection method and inspection apparatus
TW201425563A (en) * 2007-09-11 2014-07-01 Dow Corning Composite, thermal interface material containing the composite, and methods for their preparation and use
CN101809454A (en) * 2007-10-31 2010-08-18 株式会社爱德万测试 Abnormality detecting device for detecting abnormality of contact section of contact arm
CN101989584B (en) * 2009-07-31 2012-07-04 国际商业机器公司 Method for increasing the thermal coupling heat radiation and reliability of a cooling module
CN102520742A (en) * 2011-11-10 2012-06-27 致茂电子(苏州)有限公司 Temperature regulation and control system for detecting platform

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113163594A (en) * 2020-01-07 2021-07-23 峻立科技股份有限公司 Method for combining plastic component and circuit board
CN113163594B (en) * 2020-01-07 2024-04-09 峻立科技股份有限公司 Method for combining plastic component and circuit board

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CN104502637A (en) 2015-04-08

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