CN104476383B - A kind of silicon wafer Circulated polishing device and Circulated polishing method - Google Patents
A kind of silicon wafer Circulated polishing device and Circulated polishing method Download PDFInfo
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- CN104476383B CN104476383B CN201410676567.0A CN201410676567A CN104476383B CN 104476383 B CN104476383 B CN 104476383B CN 201410676567 A CN201410676567 A CN 201410676567A CN 104476383 B CN104476383 B CN 104476383B
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- 238000005498 polishing Methods 0.000 title claims abstract description 170
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 30
- 239000010703 silicon Substances 0.000 title claims abstract description 30
- 239000012530 fluid Substances 0.000 claims abstract description 52
- 239000007788 liquid Substances 0.000 claims abstract description 32
- 238000010926 purge Methods 0.000 claims abstract description 7
- 230000007797 corrosion Effects 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 238000005259 measurement Methods 0.000 claims description 5
- 239000000498 cooling water Substances 0.000 claims description 4
- 238000010992 reflux Methods 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 3
- 230000006641 stabilisation Effects 0.000 abstract description 9
- 238000011105 stabilization Methods 0.000 abstract description 9
- 238000009776 industrial production Methods 0.000 abstract description 2
- 238000004140 cleaning Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000001914 filtration Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 235000014443 Pyrus communis Nutrition 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
- B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to a kind of silicon wafer Circulated polishing device and Circulated polishing method.The device includes polishing liquid treating system, and it includes：Separatory funnel is provided with first reservoir and precision PH is counted, connected with polishing system by pipeline, filter core and constant flow pump are provided with pipeline；Second reservoir is connected by a drain pipe road of polishing system with polishing system, and the 3rd reservoir is connected with first, second reservoir respectively by pipeline, and filter core and constant flow pump are equipped with the pipeline of connection；Polishing system includes rubbing head and polishing pad, which is provided with two drain pipe roads；Polishing pad purging system includes reservoir, is connected with polishing system by a drain pipe of pipeline and polishing system, and constant flow pump is provided with pipeline.The stabilization of roughness during silicon wafer Circulated polishing can be maintained using Circulated polishing device and method of the present invention, extends the use time of polishing fluid, save cost.The inventive method is simply controllable, it is easy to accomplish large-scale industrial production.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to silicon wafer polishing field.
Background technology
IC industry is the core of IT industry, important basic, the guiding and strategic industry of country.
The application of most of current semi-conductor industry is the integrated circuit based on silicon.With integrated circuit towards microminaturization, low-power consumption
Strided forward with high reliability aspect, used as the global planarizartion technology of currently the only monocrystalline silicon, people are to chemical Mechanical Polishing Technique
Requirement increasingly improve.
Two contents of aspect are related generally in CMP process：The selection of polishing fluid and glossing it is excellent
Change.In order to improve the surface quality of silicon wafer after polishing, polishing is divided into rough polishing, fine polishing and finishing polish three by researcher
Step, and the polishing fluid of technique is adapted to according to different step exploitations.In terms of silicon wafer polishing liquid exploitation, researcher does
Substantial amounts of work, and successfully develop the polishing fluid for adapting to different step, such as patent CN102766406 A, CN102766408
A, CN102093820 A and CN102127373 A etc..In terms of the exploitation of technique, each manufacturer also tries to explore, such as patent
CN103144011 A, CN102403212A, CN101733697 B and CN102172878 B etc..
In actual production process, most monocrystalline silicon buffing liquid are recycled with cost-effective.However, in circulation
In polishing process, due to the deposition of product, the change of polishing fluid pH value, the reunion of Abrasive Particle Size and the continuous undissolved product for producing
The reasons such as thing, cause the chemical machinery balance of polishing fluid after circulating destroyed.These small changes can cause the silicon after polishing
The roughness on piece surface is constantly increasing, until producing the defects such as more serious corrosion and scuffing.Have to solve this problem
Two schemes：One is to develop novel polishing liquid, it is necessary to be added thereto to other auxiliary agents such as dispersant, PH stabilizer etc., this is not only
The unstable of polishing fluid system can be brought can also bring other impurities and then influence the surface quality after polishing.Two is to reduce polishing
The number of times that liquid is recycled, this can undoubtedly bring larger cost pressure.Circulated polishing device and method of the present invention can be reduced
The deposition of product is polished in circulation, the stabilization of polishing system pH value is maintained, the formation of bulky grain thing is reduced.Silicon can effectively be alleviated
The unstable problem of roughness in wafer cycles polishing process, extension polishing fluid recycles number of times.
The content of the invention
It is an object of the invention to overcome deficiency of the prior art, Circulated polishing device and the side of a kind of silicon wafer are provided
Method.The present invention includes that chemically mechanical polishing, polishing pad cleaning and polishing fluid process three steps, is effectively solved using the present invention
The unstable problem of roughness during silicon wafer Circulated polishing of having determined, extends the use time of polishing fluid.
A kind of Circulated polishing device of silicon wafer of the invention, it is characterised in that the device include polishing liquid treating system,
Polishing system, polishing pad purging system；The polishing liquid treating system includes the first reservoir, is provided with the first reservoir point
Liquid funnel and precision PH are counted, and are connected with polishing system by pipeline, and the first filter core and the first constant flow pump are provided with connecting pipeline,
Second reservoir is connected by a drain pipe road of polishing system with polishing system, and the 3rd reservoir passes through pipeline respectively with the
First, the second reservoir connection, is equipped with second, third filter core of filter core and second, third constant flow pump on the pipeline of connection；It is described
Polishing system includes rubbing head, silicon wafer and polishing pad, which is provided with two drain pipe roads；The polishing pad purging system includes
4th reservoir and pipeline, the 4th reservoir are connected by a drain pipe road of pipeline and polishing system with polishing system, are connected
Pipeline is provided with the 4th constant flow pump.
A kind of Circulated polishing method of silicon wafer of the invention, its feature is comprised the following steps in the method：
Being first turned on the first constant flow pump makes the polishing fluid for preparing enter polishing system by pipeline and the first filter core；
Polishing system is opened to be polished；
The second constant flow pump is opened after a polish, the polishing fluid after circulation is realized first filtering by the second filter core；
The 3rd constant flow pump is opened again, the polishing fluid after circulation is realized secondary filter by the 3rd filter core；
The polished each total reflux of liquid being measured after circulate in the reservoir of flow control one to after the first reservoir using accurate PH
The pH value of polishing fluid, and add certain density alkaline corrosion agent (ethylenediamine) to pH value in time by separatory funnel and recover to first
Beginning pH value.
After the completion of Circulated polishing each time, the constant flow pump for polishing liquid treating system is stopped, and opens the 4th constant flow pump
Polishing pad is cleaned.
Compared with prior art, the invention has the advantages that：
1st, it is applied to polishing fluid of the invention and only contains alkaline corrosion agent and metal-chelator, it is not necessary to adds other stabilizations
Agent can just keep the stabilization of polishing fluid system in polishing process.
2nd, the pH value after to Circulated polishing each time is monitored and corrects the stabilization for being conducive to polishing system.
3rd, the pH value after to Circulated polishing each time is monitored and removal rate during correction is conducive to polishing process
Stabilization and chemical machinery balance.
4th, the cleaning using cleaning fluid to polishing pad after to Circulated polishing each time is conducive to keeping the clean of polishing pad
Only, reduce and be deposited on influence of the particulate matter to polishing process on polishing pad.
5th, by filtration system to the precipitate metal hydroxides after Circulated polishing each time, silicate precipitates, big
The filtering of the reunion Ludox and other impurities of grain, can maintain the stabilization of polishing fluid abrasive particle to ensure the steady of surface of polished quality
It is fixed.
Brief description of the drawings
Fig. 1 is Circulated polishing schematic device of the present invention.
Fig. 2 is monocrystalline silicon piece roughness change schematic diagram after being polished using device and method of the invention and contrast technique.
Main element symbol description
The constant flow pump 12 of first reservoir 1 second
The filter core 13 of polishing fluid 2 second
The reservoir 14 of separatory funnel 3 the 3rd
The constant flow pump 15 of alkaline corrosion agent 4 the 3rd
Accurate PH counts 5 the 3rd filter cores 16
The reservoir 17 of pipeline 6 the 4th
The cleaning fluid 18 of first constant flow pump 7
The constant flow pump 19 of rubbing head 8 the 4th
The filter core 20 of silicon wafer 9 first
The drain pipe road 21 of polishing pad 10
Second reservoir 11
Specific embodiment
It is as follows to the detailed description of the invention below in conjunction with the accompanying drawings：
A kind of Circulated polishing device of silicon wafer of the invention, as shown in Figure 1.Including polishing liquid treating system, polishing system
System, polishing pad purging system.
Wherein, polishing liquid treating system is used for conveying and treatment to polishing fluid, including reservoir, pipeline, filter core and perseverance
Stream pump；There are separatory funnel 3, precision PH to count 5 and pipeline 6 in first reservoir 1, the first constant flow pump 7 starts, by pipeline 6, first
Filter core 20, first time filtering is carried out to polishing fluid, and polishing fluid is transported into polishing system；By a liquid outlet 21 of polishing system
(liquid outlet for now, connecting polishing pad purging system is closed), the second reservoir 11 is transported to by the polishing fluid after, is started
Second constant flow pump 12, the 3rd reservoir 14 is transported to after pipeline, the second filter core 13 are filtered by polishing fluid；Start the 3rd constant current
Pump 15, the first liquid storage groove is transported to after being refiltered by pipeline and the 3rd filter core 16 by polishing fluid；First, second and third constant flow pump is used
To control the flow velocity of polishing fluid；
Polishing system is used for the polishing to silicon wafer, including rubbing head 8, silicon wafer 9 and polishing pad 10, has on polishing system
Two liquid outlets are simultaneously provided with closing device, and polishing system can select now commercially available any money；One liquid outlet and the second reservoir
11 connections, another liquid outlet is connected with the 4th reservoir 17；
Polishing pad purging system is used for cleaning to polishing pad, including the 4th reservoir 17 and is located at pipeline therein 6, leads to
Cross the constant flow pump 19 of pipeline 6 and the 4th and be transported to polishing pad cleaning fluid and cleaning is completed in polishing system, the storage of polishing system
The liquid outlet 21 of liquid bath one is connected (liquid outlet for now, connecting polishing system is closed) with the 4th reservoir.
First filter core 20 and the aperture of the 3rd filter core 16 are preferably 0.2 μm, and the aperture of the second filter core 13 is preferably 2 μm.
The present invention can be using the accurate PH for the being capable of accurate measurement polishing fluid pH value meters of any commercial available, the embodiment of the present invention
Use the model PHS-3C types precision PH meters of Shanghai Lei Ci companies production；
The present invention can use the separatory funnel of the addition speed that can accurately control alkaline corrosion agent of any commercial available,
The capacity of Changzhou Pu Tian instrument manufacturings Co., Ltd production that the embodiment of the present invention is used is the pear shape separatory funnel of 1L；
The present invention can be using the constant flow pump of the flow for being capable of accurate measurement polishing fluid of any commercial available, the embodiment of the present invention
The model BT100-1F type constant flow pumps of Baoding LanGe constant flow pump Co., Ltd's production of use；
The present invention can be using the abrasive particle and other impurity that can accurately filter big particle diameter in polishing fluid of any commercial available
Filter core, the 3M companies production model used in the embodiment of the present invention is PolyPro-Klean type filter cores；
The present invention can be using the polishing machine that continuous-stable polishing is required that can meet of any commercial available, the embodiment of the present invention
The Chuan Ji electric mechanicals 's production model for using is SpeedFAM36 type single side polishing machines；
The polishing pad cleaning fluid and polishing method that the present embodiment is used are the applicant's earlier patent application (number of patent applications
201210592020.3) cleaning fluid disclosed in and method, the content of non-invention protection are not being repeated herein, and the present invention can also be fitted
With other polishing pad cleaning fluids.
The component of the polishing fluid that the present embodiment is used is 50nm including particle diameter, the cataloid abrasive particle of solid content 40%,
10% alkaline polishing reagent ethylenediamine, 1% metal-chelator tartaric acid, deionized water surplus.Polishing fluid pH value is 10-12.This
System is also suitable other polishing pad cleaning fluids.
The silicon wafer Circulated polishing method of the present embodiment is comprised the following steps：
Be first according to dilution ratio prepare polishing fluid in reservoir 1.
Then opening the first constant flow pump 7 makes the polishing fluid for preparing enter polishing by 6 and first filter core of pipe-line system 20
System, then opens burnishing device and is polished, and the flow for preferably setting the first constant flow pump 7 is 3.5L/min.After 1min is polished
The second constant flow pump 12 is opened, the polishing fluid after circulation is realized first filtering by the second filter core 13, preferably set the second constant flow pump
12 flow set is 3L/min.The 3rd constant flow pump 15 is opened after the second constant flow pump 12 opens 1min, makes the polishing after circulation
Liquid realizes secondary filter by the 3rd filter core 16, and the flow set for preferably setting the 3rd constant flow pump 15 is 2.5L/min.Each time
After the completion of polishing, the constant flow pump for polishing liquid treating system is stopped.
Open cleaning fluid and cleaning method pair that the 4th constant flow pump 19 is disclosed using number of patent application 201210592020.3
Polishing pad is cleaned.
Polished liquid total reflux uses accurate PH to count 5 and measures and circulate in the first reservoirs 1 to after in the first reservoir 1
The pH value of polishing fluid afterwards, and certain density alkaline corrosion agent to pH value is added by separatory funnel 3 in time return to
Untill pH value.
The polish pressure 0.3MPa of polishing method of the present invention, polishes flow quantity 3.5L/min, lower wall rotating speed
50rpm, polish temperature is controlled below 38 DEG C.During Circulated polishing, provide recirculated cooling water by cooling-water machine to control
Polish temperature.
After polishing is completed every time, the roughness of silicon wafer surface after contourgraph measurement polishing.Specifically measuring method is：
A piece of silicon chip measurement is chosen on each rubbing head, three points are uniformly measured respectively along its diameter per a piece of silicon chip.Finally
To each time polish after roughness value be 12 average values of point, as a result as shown in Figure 2.Wherein, described cleaning step
Suddenly with cleaning method in patent application 201210592020.3.
Experiment condition：The polishing machine used in this experiment is SpeedFAM36 type single side polishing machines；During each Circulated polishing
Between be 30min；Polish pressure 0.3MPa, polishes flow quantity 3.5L/min, lower wall rotating speed 50rpm, using Suba800 polishing pads,
Polish temperature is controlled below 38 DEG C, polishing fluid volume ratio 1:25 dilutions are used, and throw 12 6 cun of (100) p-type monocrystalline simultaneously every time
Silicon chip.
Comparative example
Polishing fluid, polishing method and the measuring method that comparative example is used are identical with embodiment.Difference is not throw
The filtering of light liquid, pH value stabilization and polishing pad clean three steps, as a result as shown in Figure 2.It is worth noting that polishing fluid is in circulation
When using third time, silicon wafer surface has just occurred in that scuffing defect, recycles the 7th silicon wafer surface and occurs
Heavy corrosion.
Embodiment absolutely proves that burnishing device of the invention and method maintain roughness during silicon wafer Circulated polishing
Stabilization, and the use time of polishing fluid is extended, save cost, it is easy to accomplish large-scale industrial production, the inventive method
It is simple controllable.
Claims (3)
1. to the method for silicon wafer Circulated polishing, the device includes polishing system, institute to a kind of utilization silicon wafer Circulated polishing device
Stating polishing system includes rubbing head, silicon wafer and polishing pad, has two liquid outlets thereon and is provided with closing device；Polishing pad is cleaned
System；The device also includes polishing liquid treating system, and the polishing liquid treating system includes the first reservoir, in the first reservoir
In be provided with separatory funnel and precision PH meters, connected with polishing system by pipeline, the first filter core and the are provided with connecting pipeline
One constant flow pump, the second reservoir is connected by a liquid outlet of polishing system with polishing system, and the 3rd reservoir is by pipeline point
Do not connected with first, second reservoir, second, third filter core of filter core and second, third constant current are equipped with the pipeline of connection
Pump；The polishing pad purging system includes the 4th reservoir and pipeline, and the 4th reservoir is another by pipeline and polishing system
Liquid outlet is connected with polishing system, and connecting pipeline is provided with the 4th constant flow pump；Described first and the 3rd filter core aperture be 0.2 μm,
Second filter core aperture is 2 μm；
It is characterized in that the method is comprised the following steps：
Being first turned on first constant flow pump makes the polishing fluid for preparing enter polishing by the pipeline and first filter core
System；
The polishing system is opened to be polished；
Second constant flow pump is opened after a polish, the polishing fluid after circulation is realized first mistake by second filter core
Filter；
The 3rd constant flow pump is opened again, the polishing fluid after circulation is realized secondary filter by the 3rd filter core；
After after each total reflux of the polishing fluid to first reservoir, measurement first storage is counted using the accurate PH
The pH value of the polishing fluid after being circulated in liquid bath, and certain density alkaline corrosion agent is added extremely by the separatory funnel in time
PH value recovers to initial pH；
After the completion of Circulated polishing each time, the constant flow pump of the polishing liquid treating system is stopped, and opens the described 4th permanent
Stream pump is cleaned to the polishing pad.
2. method according to claim 1, it is characterised in that the flow of first constant flow pump is 3.5L/min, described
The flow of the second constant flow pump is 3L/min, and the flow set of the 3rd constant flow pump is 2.5L/min.
3. method according to claim 1, it is characterised in that the polish pressure 0.3MPa of the polishing system, polishing fluid
Flow 3.5L/min, lower wall rotating speed 50rpm, polish temperature are controlled below 38 DEG C, and circulating cooling water control is provided by cooling-water machine
Polish temperature processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410676567.0A CN104476383B (en) | 2014-11-21 | 2014-11-21 | A kind of silicon wafer Circulated polishing device and Circulated polishing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410676567.0A CN104476383B (en) | 2014-11-21 | 2014-11-21 | A kind of silicon wafer Circulated polishing device and Circulated polishing method |
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| CN104476383B true CN104476383B (en) | 2017-05-31 |
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| CN105632895B (en) * | 2016-01-04 | 2018-08-10 | 北京七星华创电子股份有限公司 | A kind of method of spheric granules defect in reduction chemical cleaning technology |
| CN109866082A (en) * | 2017-12-01 | 2019-06-11 | 兆远科技股份有限公司 | The polishing method of polycrystalline aluminum nitride substrate and the finished product of polycrystalline aluminum nitride substrate |
| CN108161579A (en) * | 2017-12-11 | 2018-06-15 | 上海申和热磁电子有限公司 | Liquid thinner ratio is thrown in a kind of adjustment improves the unilateral thick method of polishing |
| CN107962491A (en) * | 2017-12-27 | 2018-04-27 | 山东中佳电子科技有限公司 | A kind of copper pipe inner wall polishing cleaning systems and its method |
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| CN100374245C (en) * | 2003-12-29 | 2008-03-12 | 中芯国际集成电路制造(上海)有限公司 | Grinding liquid reusing device and system thereof |
| CN1947945A (en) * | 2005-10-14 | 2007-04-18 | 联华电子股份有限公司 | Equipment for chemical-mechanical polishing, method for washing its polishing pad and flattening method |
| CN101367189A (en) * | 2007-08-15 | 2009-02-18 | 江苏海迅实业集团股份有限公司 | Silicon slice glazed surface scuffing control method |
| CN101450461A (en) * | 2007-12-06 | 2009-06-10 | 上海华虹Nec电子有限公司 | System and method for increasing utilization rate of chemico-mechanical polishing grinding liquid |
| WO2010111291A2 (en) * | 2009-03-25 | 2010-09-30 | Applied Materials, Inc. | Point of use recycling system for cmp slurry |
| CN102061131B (en) * | 2010-11-22 | 2013-06-19 | 上海新安纳电子科技有限公司 | Polishing liquid for reducing microscratch of surfaces of silicon wafers and preparation and use method thereof |
| CN203045492U (en) * | 2012-12-15 | 2013-07-10 | 焦作市科瑞斯达光电材料有限公司 | Grinding polishing system of light-emitting diode (LED) substrate |
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