CN109866082A - The polishing method of polycrystalline aluminum nitride substrate and the finished product of polycrystalline aluminum nitride substrate - Google Patents
The polishing method of polycrystalline aluminum nitride substrate and the finished product of polycrystalline aluminum nitride substrate Download PDFInfo
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- CN109866082A CN109866082A CN201711254506.5A CN201711254506A CN109866082A CN 109866082 A CN109866082 A CN 109866082A CN 201711254506 A CN201711254506 A CN 201711254506A CN 109866082 A CN109866082 A CN 109866082A
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- aluminum nitride
- nitride substrate
- polishing
- polycrystalline aluminum
- polishing method
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Abstract
A kind of polishing method of polycrystalline aluminum nitride substrate, it comprises the steps of and polycrystalline aluminum nitride substrate is placed in burnishing device progress polishing operation, wherein the pH value of polishing fluid used in burnishing device includes weight percent between 15~30% grinding agent between 7~9.5, and in polishing fluid；After the completion of polishing operation, polycrystalline aluminum nitride substrate is taken out from the burnishing device.Polycrystalline aluminum nitride substrate can be allowed to maintain removal rate appropriate in polishing whereby, avoid the too fast generation for causing hole on surface of polishing speed.On an at least surface after the finished product of polycrystalline aluminum nitride substrate is polished, diameter between 0.05~8 μm of defect defect concentration less than 10/cm2。
Description
Technical field
The present invention relates to the polishing technologies of substrate, more particularly to a kind of polishing method suitable for polycrystalline aluminum nitride substrate
And the finished product of polycrystalline aluminum nitride substrate.
Background technique
Aluminium nitride substrate has high thermal conductivity, electric insulating quality and the splendid feature of gallium nitride crystal lattice matching, because
This, is commonly applied to need the power component of high pressure, high current, and need the RF component of high frequency, high voltage.
Aluminium nitride substrate includes monocrystalline and polycrystalline structure, and mono-crystal nitride aluminum substrate has the advantages that high-quality, but with mesh
For preceding technology, the high production cost of mono-crystal nitride aluminum substrate, and can not accomplish the specification of large scale (more than when 8).It compares
For, though the structure of polycrystalline aluminum nitride substrate has more defect (defect), however, it is possible to large-sized more than when reaching 8
Specification.
Polycrystalline aluminum nitride substrate is that the aluminium nitride bulk of thermal sintering is cut, after dicing, (of heap of stone carrying out extension
It is brilliant) before, in order to ensure the flatness of substrate surface or the thickness of reduction substrate, it all will do it polishing operation.Known polycrystalline
The pH value of aluminium nitride substrate polishing fluid used in polishing operation is 10 or more, uses the polishing for increasing polycrystalline aluminum nitride substrate
Rate.However, since the surface of polycrystalline aluminum nitride substrate includes Al polarity and the polar crystal grain of N, Al polarity crystal grain with
The removal rate of N polarity crystal grain is different, its surface is easy to produce hole (pit, such as figure after the polishing fluid polishing for being 10 or more with pH value
The region of arrow meaning in 1), cause polishing after polycrystalline aluminum nitride substrate it is poor quality.
Summary of the invention
In view of this, the purpose of the present invention is to provide the polishing methods and polycrystalline aluminum nitride of a kind of polycrystalline aluminum nitride substrate
The finished product of substrate can generate hole to avoid the polycrystalline aluminum nitride substrate surface after polishing.
To achieve the goals above, the polishing method of a kind of polycrystalline aluminum nitride substrate provided by the invention includes following step
It is rapid: the polycrystalline aluminum nitride substrate being placed in a burnishing device, is polished at least surface to the polycrystalline aluminum nitride substrate
Operation, wherein for the pH value of polishing fluid used in the burnishing device between a predetermined pH value range, which is pH
It between 7~9.5, and include grinding agent in polishing fluid, the weight percent of grinding agent, should between a predetermined weight percent range
Predetermined weight percent range is 15~30%；And after the completion of polishing operation, which is filled from the polishing
Set taking-up.
A kind of finished product of polycrystalline aluminum nitride substrate provided by the invention, is polished by polishing method above-mentioned,
In, on at least surface after the finished product of the polycrystalline aluminum nitride substrate is polished, defect of the diameter between 0.05~8 μm of defect
Density is less than 10/cm2。
Effect of the invention is that being not more than the predetermined weight percent model of 9.5 and grinding agent by the pH value of polishing fluid
Enclosing is 15~30%, therefore, polycrystalline aluminum nitride substrate can be allowed to maintain removal rate appropriate in polishing, avoid polishing speed
The too fast generation for causing hole on surface (pit) of rate.
Detailed description of the invention
Fig. 1 is the photo that the polycrystalline aluminum nitride substrate surface after the polishing of known polishing method is observed under the microscope；
Fig. 2 is a preferred embodiment of the present invention polishing system；
Fig. 3 is the photograph that the polycrystalline aluminum nitride substrate surface after the polishing method polishing of above-described embodiment is observed under the microscope
Piece.
[description of symbols]
[present invention]
10 burnishing device, 102 tank, 12 reserve tank
14pH adjusts 16 polishing fluid source of supply of liquid source of supply, 18 control device
20 output pipe, 202 draw-off pump, 22 return line
222 filtration members, 24 first pipeline, 242 first valve
26 second pipeline, 262 second valve 28pH sensor
30 heat-exchange tube, 32 temperature controller
W polycrystalline aluminum nitride substrate
S polishing fluid
Specific embodiment
For that can be illustrated more clearly that the present invention, now lifts preferred embodiment and cooperate attached drawing detailed description is as follows.It please join Fig. 2 institute
Show, for the polishing system in a preferred embodiment of the present invention to carry out the polishing method of polycrystalline aluminum nitride substrate.Polishing system
Include a burnishing device, a reserve tank 12, pH adjustment liquid source of supply 14, a polishing fluid source of supply 16 and a control device 18.
Polishing operation of the burnishing device 10 to carry out polycrystalline aluminum nitride substrate W, polycrystalline aluminum nitride base in the present embodiment
Plate W is the polycrystalline aluminum nitride substrate W of thermal sintering, is cut by the aluminium nitride bulk of thermal sintering.
The reserve tank 12 includes grinding agent, additive, solvent in polishing fluid S to accommodate polishing fluid S, wherein polishing fluid S
PH value between a predetermined pH value range, the predetermined pH value range is between pH7~9.5, in the present embodiment, the predetermined pH value model
It encloses for pH8~9；Grinding agent includes Silica abrasive grain in the present embodiment, and the weight percent of grinding agent is a predetermined weight
Percentage range is measured, which is 15~30%, in the present embodiment, the predetermined weight percent of grinding agent
Range is 20~25%.Additive includes at least one of oxidant, dispersing agent and salt.
An output pipe 20 and a return line 22, and efferent duct are provided between the burnishing device 10 and the reserve tank 12
Be provided on road 20 one my take pump 202, the polishing fluid S in reserve tank 12 is extracted to burnishing device 10 and is used.Return line
22 are a tank 102 and the reserve tank 12 in being connected to burnishing device 10, and the polishing fluid S after polishing is back to reserve tank
12, return line 22 is equipped with a filtration members 222, the impurity in polishing fluid which is recovered by filtration, such as polishing fluid
In crystallization.
It is provided with one first pipeline between pH adjustment liquid source of supply 14 and the reserve tank 12, is arranged on first pipeline 24
There is one first valve 242, which is controlled and open or block the first pipeline 24, and the pH of pH adjustment liquid source of supply 14 is made
Adjustment liquid is delivered in reserve tank 12 or blocks pH adjustment liquid to inject the reserve tank 12.
It is provided with one second pipeline 26 between the polishing fluid source of supply 16 and the reserve tank 12, is arranged on second pipeline 26
There is one second valve 262, which is controlled and open or block the second pipeline 26, is made in polishing fluid source of supply 16 new
Polishing fluid is delivered in reserve tank 12 or new polishing fluid is blocked to inject the reserve tank 12.
A pH sensor 28 is provided in the reserve tank 12, the control device 18 electric connection pH sensor 28, and according to
First valve 242 is controlled according to the pH value that the pH sensor 28 is sensed and opens or block first pipeline 24, makes the reserve tank 12
The pH value of interior polishing fluid is maintained at the predetermined pH value range.
In addition, the control device 18 is more to extract the polishing fluid S in the reserve tank 12, and analyzes and ground in polishing fluid S
The weight percent of agent controls the second valve 262 and opens or block second pipeline 26, accordingly to maintain the weight percent of grinding agent
Than in the predetermined weight percent range.
A heat-exchange tube 30 is equipped in the reserve tank 12, which is connected to a temperature controller 32, to control the storage
The temperature for depositing polishing fluid S in slot 12 is maintained at a predetermined temperature range, avoids polishing fluid S temperature excessively high.
The polishing method that the present embodiment can be carried out by above-mentioned structure, comprises the steps of
Polycrystalline aluminum nitride substrate W is placed in the burnishing device 10, controls draw-off pump 202 for the polishing fluid S in reserve tank
It extracts to burnishing device 10 and uses, polishing operation is carried out at least surface to polycrystalline aluminum nitride substrate W.In polishing operation mistake
The pH value of polishing fluid S used in journey between predetermined pH value range above-mentioned, and in polishing fluid S grinding agent weight percent
Between predetermined weight percent range above-mentioned.
On an at least surface of polycrystalline aluminum nitride substrate W after a scheduled polishing time polishing, that is, completes polishing and make
Polycrystalline aluminum nitride substrate W can be taken out from the burnishing device 10, become the finished product of polycrystalline aluminum nitride substrate W by industry.Practice
On, it can also be taken out after the scheduled polishing time polishing on another surface to polycrystalline aluminum nitride substrate W again.
Whereby, the basic step of the polishing method of the present embodiment can be completed.
In addition, in the polishing method of this implementation, execution the following steps are further included, also, the following steps are without successive suitable
Order relation:
The polishing fluid S in reserve tank 12, which is controlled, by the temperature controller 32 and heat-exchange tube 30 is maintained at the predetermined temperature above-mentioned
Range is spent, to maintain to be injected into the temperature of the polishing fluid S of the burnishing device 10；
The pH value that polishing fluid S is monitored by the control device 18, controls the first valve 242 accordingly, makes to polish in reserve tank 12
The pH value of liquid S is maintained at the predetermined pH value range, for being injected into the burnishing device 10；And
The weight percent that the grinding agent of polishing fluid S in reserve tank 12 is monitored by the control device 18 controls the accordingly
Two valves 262 make the weight percent of grinding agent in reserve tank 12 be maintained at the predetermined weight percent range, for being injected into this
Burnishing device 10.
In practice, at least one also can be performed in aforementioned three steps.
According to the above, the pH value of polishing fluid of the invention is no more than 9.5 and the predetermined weight percent range of grinding agent is
15~30%, therefore, polycrystalline aluminum nitride substrate W can be allowed to maintain removal rate appropriate in polishing, avoid polishing speed
The too fast generation for causing hole on surface (pit).It please cooperate Fig. 3, the finished product of the polycrystalline aluminum nitride substrate W of the present embodiment is polished
An at least surface afterwards after a polish, can remain flatter, and through measure obtain it is polished after an at least surface diameter be situated between
In 0.05~8 μm of defect defect concentration less than 10/cm2.In this way, can avoid influencing subsequent growth in polycrystalline aluminum nitride base
The quality of the epitaxial layer on the surface of plate W.
The above is only a specific embodiment of the present invention, is not intended to restrict the invention, all in essence of the invention
Within mind and principle, any modification, equivalent substitution, improvement and etc. done be should all be included in the protection scope of the present invention.
Claims (9)
1. a kind of polishing method of polycrystalline aluminum nitride substrate, comprises the steps of
The polycrystalline aluminum nitride substrate is placed in a burnishing device, is polished at least surface to the polycrystalline aluminum nitride substrate
Operation, wherein the pH value of polishing fluid used in the burnishing device is between a predetermined pH value range, and which is 7~
It between 9.5, and include grinding agent in polishing fluid, for the weight percent of grinding agent between a predetermined weight percent range, this is pre-
Determining weight percentage ranges is 15~30%；And
After the completion of polishing operation, which is taken out from the burnishing device.
2. the polishing method of polycrystalline aluminum nitride substrate as described in claim 1 is maintained at a predetermined temperature comprising control polishing fluid
Range is spent, the predetermined temperature range is between 8~40 DEG C.
3. the polishing method of polycrystalline aluminum nitride substrate as claimed in claim 2, wherein the predetermined temperature range is between 10~20
℃。
4. the polishing method of polycrystalline aluminum nitride substrate as described in claim 1, wherein the predetermined pH value range of polishing fluid is 8
~9.
5. the polishing method of polycrystalline aluminum nitride substrate as described in claim 1 comprising monitoring the pH value of polishing fluid, and controls throwing
The pH value of light liquid is maintained at the predetermined pH value range.
6. the polishing method of polycrystalline aluminum nitride substrate as described in claim 1, wherein the predetermined weight percent range is 20
~25%.
7. the polishing method of polycrystalline aluminum nitride substrate as described in claim 1, the weight comprising grinding agent in monitoring polishing fluid
Percentage, and the weight percent for controlling grinding agent is maintained at the predetermined weight percent range.
8. the polishing method of polycrystalline aluminum nitride substrate as described in claim 1, wherein polishing fluid includes additive, additive packet
Containing at least one of oxidant, dispersing agent and salt.
9. a kind of finished product of polycrystalline aluminum nitride substrate, is to be polished with polishing method as claimed in claim 1, wherein the polycrystalline nitrogen
Change aluminum substrate finished product it is polished after an at least surface on, diameter between 0.05~8 μm of defect defect concentration less than 10
/ cm2。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711254506.5A CN109866082A (en) | 2017-12-01 | 2017-12-01 | The polishing method of polycrystalline aluminum nitride substrate and the finished product of polycrystalline aluminum nitride substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711254506.5A CN109866082A (en) | 2017-12-01 | 2017-12-01 | The polishing method of polycrystalline aluminum nitride substrate and the finished product of polycrystalline aluminum nitride substrate |
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| CN109866082A true CN109866082A (en) | 2019-06-11 |
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| CN201711254506.5A Pending CN109866082A (en) | 2017-12-01 | 2017-12-01 | The polishing method of polycrystalline aluminum nitride substrate and the finished product of polycrystalline aluminum nitride substrate |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02218557A (en) * | 1989-02-15 | 1990-08-31 | Sumitomo Electric Ind Ltd | Grinding device for semiconductor wafer |
| JPH09131660A (en) * | 1995-11-06 | 1997-05-20 | Toshiba Corp | Semiconductor manufacturing device and method thereof |
| US6077437A (en) * | 1996-10-18 | 2000-06-20 | Nec Corporation | Device and method for recovering and reusing a polishing agent |
| JP2001223189A (en) * | 2000-02-08 | 2001-08-17 | Ngk Insulators Ltd | Method for polishing aluminum nitride thin-film surface |
| CN101495271A (en) * | 2006-05-26 | 2009-07-29 | 卡伯特微电子公司 | Compositions, methods and systems for polishing aluminum oxide and aluminum oxynitride substrates |
| CN101823234A (en) * | 2009-03-04 | 2010-09-08 | 台湾积体电路制造股份有限公司 | Planarization slurry feed system and planarization slurry mixture feed method of chemical mechanical planarization station |
| CN103264352A (en) * | 2013-04-26 | 2013-08-28 | 中国科学院上海光学精密机械研究所 | Polishing liquid circulating filtration and injection device for large-sized ring polishing machine |
| TWI419948B (en) * | 2006-11-15 | 2013-12-21 | Cabot Microelectronics Corp | Methods for polishing aluminum nitride |
| CN104476383A (en) * | 2014-11-21 | 2015-04-01 | 深圳市力合材料有限公司 | Circulation polishing device of silicon wafer and circulation polishing method |
-
2017
- 2017-12-01 CN CN201711254506.5A patent/CN109866082A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02218557A (en) * | 1989-02-15 | 1990-08-31 | Sumitomo Electric Ind Ltd | Grinding device for semiconductor wafer |
| JPH09131660A (en) * | 1995-11-06 | 1997-05-20 | Toshiba Corp | Semiconductor manufacturing device and method thereof |
| US6077437A (en) * | 1996-10-18 | 2000-06-20 | Nec Corporation | Device and method for recovering and reusing a polishing agent |
| JP2001223189A (en) * | 2000-02-08 | 2001-08-17 | Ngk Insulators Ltd | Method for polishing aluminum nitride thin-film surface |
| CN101495271A (en) * | 2006-05-26 | 2009-07-29 | 卡伯特微电子公司 | Compositions, methods and systems for polishing aluminum oxide and aluminum oxynitride substrates |
| TWI419948B (en) * | 2006-11-15 | 2013-12-21 | Cabot Microelectronics Corp | Methods for polishing aluminum nitride |
| CN101823234A (en) * | 2009-03-04 | 2010-09-08 | 台湾积体电路制造股份有限公司 | Planarization slurry feed system and planarization slurry mixture feed method of chemical mechanical planarization station |
| CN103264352A (en) * | 2013-04-26 | 2013-08-28 | 中国科学院上海光学精密机械研究所 | Polishing liquid circulating filtration and injection device for large-sized ring polishing machine |
| CN104476383A (en) * | 2014-11-21 | 2015-04-01 | 深圳市力合材料有限公司 | Circulation polishing device of silicon wafer and circulation polishing method |
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