CN104471730B - 发光器件和创建发光器件的方法 - Google Patents

发光器件和创建发光器件的方法 Download PDF

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Publication number
CN104471730B
CN104471730B CN201380038655.1A CN201380038655A CN104471730B CN 104471730 B CN104471730 B CN 104471730B CN 201380038655 A CN201380038655 A CN 201380038655A CN 104471730 B CN104471730 B CN 104471730B
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China
Prior art keywords
light emitting
wavelength converting
layer
converter
ceramic
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CN201380038655.1A
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Chinese (zh)
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CN104471730A (zh
Inventor
A.D.施里克
K.K.麦
G.巴辛
U.马肯斯
J.P.A.沃格斯
A.L.维杰斯
K.A.兹特维德
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Lumileds Holding BV
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Koninklijke Philips NV
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • H10H20/8513Wavelength conversion materials having two or more wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/062Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8516Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8582Means for heat extraction or cooling characterised by their shape
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0363Manufacture or treatment of packages of optical field-shaping means

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  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
CN201380038655.1A 2012-07-20 2013-07-12 发光器件和创建发光器件的方法 Active CN104471730B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261673810P 2012-07-20 2012-07-20
US61/673810 2012-07-20
PCT/IB2013/055752 WO2014013406A1 (en) 2012-07-20 2013-07-12 Led with ceramic green phosphor and protected red phosphor layer

Publications (2)

Publication Number Publication Date
CN104471730A CN104471730A (zh) 2015-03-25
CN104471730B true CN104471730B (zh) 2018-04-17

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CN201380038655.1A Active CN104471730B (zh) 2012-07-20 2013-07-12 发光器件和创建发光器件的方法

Country Status (6)

Country Link
US (3) US9379293B2 (https=)
EP (1) EP2875532B1 (https=)
JP (1) JP6348491B2 (https=)
KR (2) KR102131747B1 (https=)
CN (1) CN104471730B (https=)
WO (1) WO2014013406A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9543478B2 (en) * 2012-11-07 2017-01-10 Koninklijke Philips N.V. Light emitting device including a filter and a protective layer
DE102014100771A1 (de) * 2014-01-23 2015-07-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines keramischen Konversionselements und Licht emittierendes Bauelement
DE102014107472A1 (de) * 2014-05-27 2015-12-03 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Beleuchtungsvorrichtung
KR102408839B1 (ko) 2014-06-19 2022-06-14 루미리즈 홀딩 비.브이. 작은 소스 크기를 갖는 파장 변환 발광 디바이스
US20160023242A1 (en) * 2014-07-28 2016-01-28 Osram Sylvania Inc. Method of making wavelength converters for solid state lighting applications
JP6940784B2 (ja) * 2014-09-26 2021-09-29 日亜化学工業株式会社 発光装置の製造方法
DE102014117448A1 (de) * 2014-11-27 2016-06-02 Osram Gmbh Optoelektronischer Halbleiterchip, Verfahren zur Herstellung eines optoelektronischen Halbleiterchips, Konversionselement und Leuchtstoff für ein Konversionselement
DE102015102842A1 (de) 2015-02-27 2016-09-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Leuchtstoffkompositkeramik sowie Verfahren zu deren Herstellung
FR3033939B1 (fr) * 2015-03-20 2018-04-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente
JP6183486B2 (ja) * 2015-05-29 2017-08-23 日亜化学工業株式会社 発光装置、被覆部材の製造方法及び発光装置の製造方法
US10374134B2 (en) * 2015-05-29 2019-08-06 Nichia Corporation Light emitting device, method of manufacturing covering member, and method of manufacturing light emitting device
JP6217705B2 (ja) 2015-07-28 2017-10-25 日亜化学工業株式会社 発光装置及びその製造方法
CN106486585A (zh) * 2015-08-25 2017-03-08 比亚迪股份有限公司 Led荧光膜、led组件、制备方法以及电子器件
US9859477B2 (en) 2016-01-15 2018-01-02 Corning Incorporated Method of forming light emitting diode with high-silica substrate
JP2017174908A (ja) * 2016-03-22 2017-09-28 豊田合成株式会社 発光装置の製造方法
KR102674066B1 (ko) 2016-11-11 2024-06-13 삼성전자주식회사 발광 소자 패키지
DE102016224090B4 (de) * 2016-12-05 2024-03-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement, Modul mit mindestens zwei optoelektronischen Bauelementen und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102017101729A1 (de) * 2017-01-30 2018-08-02 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
CN110556464A (zh) * 2018-06-01 2019-12-10 深圳市绎立锐光科技开发有限公司 发光二极管封装结构及封装方法
JP6760350B2 (ja) * 2018-10-25 2020-09-23 日亜化学工業株式会社 発光装置
CN111640844B (zh) * 2020-06-17 2021-11-30 鸿利智汇集团股份有限公司 一种复合荧光膜及led封装工艺
KR102897591B1 (ko) 2021-05-06 2025-12-09 삼성전자주식회사 발광소자 패키지
US20230178690A1 (en) * 2021-12-06 2023-06-08 Lumileds Llc Monolithic LED Array And Method Of Manufacturing Thereof
EP4595119A1 (en) * 2022-09-29 2025-08-06 ams-OSRAM International GmbH Conversion element, method for producing a conversion element, and light emitting component
US20260026140A1 (en) * 2024-07-17 2026-01-22 Lumileds Llc Monolithic led array and method of manufacturing of thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101405646A (zh) * 2006-03-17 2009-04-08 飞利浦拉米尔德斯照明设备有限责任公司 用于背光的具有荧光体片的白光led
DE102010053362A1 (de) * 2010-12-03 2012-06-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips, strahlungsemittierender Halbleiterchip und strahlungsemittierendes Bauelement

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001291901A (ja) * 2000-04-07 2001-10-19 Yamada Shomei Kk 照明器具及びその製造方法
JP4292794B2 (ja) * 2002-12-04 2009-07-08 日亜化学工業株式会社 発光装置、発光装置の製造方法および発光装置の色度調整方法
US7256483B2 (en) 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
US7344902B2 (en) 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7858408B2 (en) * 2004-11-15 2010-12-28 Koninklijke Philips Electronics N.V. LED with phosphor tile and overmolded phosphor in lens
US7344952B2 (en) 2005-10-28 2008-03-18 Philips Lumileds Lighting Company, Llc Laminating encapsulant film containing phosphor over LEDs
JP2007266246A (ja) * 2006-03-28 2007-10-11 Mitsubishi Electric Corp Ledモジュール
JP2008270144A (ja) 2007-03-22 2008-11-06 Furukawa Electric Co Ltd:The ライトボックス
JP2009054801A (ja) * 2007-08-27 2009-03-12 Sanyo Electric Co Ltd 放熱部材及びそれを備えた発光モジュール
JP2009070869A (ja) * 2007-09-11 2009-04-02 Panasonic Corp 半導体発光装置
US8169136B2 (en) * 2008-02-21 2012-05-01 Nitto Denko Corporation Light emitting device with translucent ceramic plate
WO2009118985A2 (en) 2008-03-25 2009-10-01 Kabushiki Kaisha Toshiba Light emitting device, and method and apparatus for manufacturing same
JP5025625B2 (ja) * 2008-03-25 2012-09-12 株式会社東芝 発光装置の製造方法
CN105481362A (zh) * 2008-06-02 2016-04-13 松下电器产业株式会社 半导体发光设备以及使用所述半导体发光设备的光源设备
US7973327B2 (en) * 2008-09-02 2011-07-05 Bridgelux, Inc. Phosphor-converted LED
JP2012503307A (ja) * 2008-09-16 2012-02-02 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ポリマー波長変換素子
KR101639793B1 (ko) * 2008-09-25 2016-07-15 코닌클리케 필립스 엔.브이. 코팅된 발광 장치 및 그 코팅 방법
JP2010100743A (ja) * 2008-10-24 2010-05-06 Mitsubishi Chemicals Corp 蛍光体含有組成物の製造方法
US20100181582A1 (en) * 2009-01-22 2010-07-22 Intematix Corporation Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof
US9349924B2 (en) * 2009-03-19 2016-05-24 Koninklijke Phililps N.V. Illumination device with remote luminescent material
US8227276B2 (en) * 2009-05-19 2012-07-24 Intematix Corporation Manufacture of light emitting devices with phosphor wavelength conversion
US8803171B2 (en) * 2009-07-22 2014-08-12 Koninklijke Philips N.V. Reduced color over angle variation LEDs
US20110031516A1 (en) 2009-08-07 2011-02-10 Koninklijke Philips Electronics N.V. Led with silicone layer and laminated remote phosphor layer
US9909058B2 (en) * 2009-09-02 2018-03-06 Lg Innotek Co., Ltd. Phosphor, phosphor manufacturing method, and white light emitting device
US20110049545A1 (en) * 2009-09-02 2011-03-03 Koninklijke Philips Electronics N.V. Led package with phosphor plate and reflective substrate
US8203161B2 (en) * 2009-11-23 2012-06-19 Koninklijke Philips Electronics N.V. Wavelength converted semiconductor light emitting device
US8324798B2 (en) * 2010-03-19 2012-12-04 Nitto Denko Corporation Light emitting device using orange-red phosphor with co-dopants
TW201208143A (en) * 2010-08-06 2012-02-16 Semileds Optoelectronics Co White LED device and manufacturing method thereof
JP5622494B2 (ja) * 2010-09-09 2014-11-12 スタンレー電気株式会社 発光装置およびその製造方法
JP5566263B2 (ja) * 2010-11-08 2014-08-06 株式会社小糸製作所 発光モジュール

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101405646A (zh) * 2006-03-17 2009-04-08 飞利浦拉米尔德斯照明设备有限责任公司 用于背光的具有荧光体片的白光led
DE102010053362A1 (de) * 2010-12-03 2012-06-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips, strahlungsemittierender Halbleiterchip und strahlungsemittierendes Bauelement

Also Published As

Publication number Publication date
EP2875532B1 (en) 2019-02-27
JP6348491B2 (ja) 2018-06-27
US20190172983A1 (en) 2019-06-06
KR20150038136A (ko) 2015-04-08
US20150188001A1 (en) 2015-07-02
KR102131747B1 (ko) 2020-07-09
KR20200085912A (ko) 2020-07-15
EP2875532A1 (en) 2015-05-27
US20160276551A1 (en) 2016-09-22
WO2014013406A1 (en) 2014-01-23
US10205067B2 (en) 2019-02-12
JP2015522954A (ja) 2015-08-06
US9379293B2 (en) 2016-06-28
CN104471730A (zh) 2015-03-25

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Patentee before: Koninkl Philips Electronics NV

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