CN104465548A - Three-dimensional flexible packaging structure and injection molding method thereof - Google Patents
Three-dimensional flexible packaging structure and injection molding method thereof Download PDFInfo
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- CN104465548A CN104465548A CN201410758254.XA CN201410758254A CN104465548A CN 104465548 A CN104465548 A CN 104465548A CN 201410758254 A CN201410758254 A CN 201410758254A CN 104465548 A CN104465548 A CN 104465548A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92222—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92225—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Injection Moulding Of Plastics Or The Like (AREA)
Abstract
The invention discloses a three-dimensional flexible packaging structure and an injection molding method therefore. A third chip is fixed to the lower surface of the upper layer section of a flexible substrate through bottom padding and connected with the upper surface of the middle layer section of the flexible substrate in a welding mode, a first chip is fixed to the lower surface of the middle layer section of the flexible substrate through bottom padding, a solder ball is fixed to the lower surface of the lower layer section of the flexible substrate, a second chip is fixed to the upper surface of the lower layer section of the flexible substrate through bottom padding and connected with the first chip in a welding mode, an injection molding hole is formed in the upper layer section of the flexible substrate, and a cavity defined by the upper layer section of the flexible substrate, a first connecting section, the middle layer section of the substrate, a second connecting section and the lower layer section of the substrate is filled with injection molding materials. The packaging structure has the advantages of being high in using reliability, simple and the like.
Description
Technical field
The invention discloses a kind of three-dimension flexible encapsulating structure, the invention also discloses a kind of injection molding forming method of three-dimension flexible encapsulating structure, the invention belongs to technical field of semiconductor encapsulation.
Background technology
Current, the trend of semiconductor packages development is increasing to high frequency, multi-chip module (MCM) future development.The chip-stacked 3D IC of integrated difference will become mainstream development trend, the system integration (SiP) encapsulates, the market share shared by stacked package (PiP, PoP) also increases year by year, and 2.5D/3D TSV technology is also in and prepares the volume production stage.Due to the restriction of packaging appearance size, the packaging body (chip or the good package of plastic packaging) of difference in functionality module is put in a packaging body, it is very large that packaging body overall dimension can not be done, therefore, chip is a large trend short transverse stacking, and flexible base, board is by being a main trend of technical development by being stacked up between chip after folding.For protect IC is not subject to the impact of exterior mechanical stress and moisture, flexible base, board often will carry out plastic packaging after fold stack, is wrapped in by chip in plastic packaging colloid.But due to the restriction of flexible package structure, the technique of injection moulding sealing is often more difficult, and yield is also comparatively difficult to ensure card.
The technology of what traditional flexible package stacked structure adopted is side injecting glue, is injected into package interior from the side by adhesive body, after chip surrounds completely, is solidified by colloid, complete the plastic packaging process of whole chip body after overbaking process for cooling.
Traditional injection moulding adopts the mode of side injection moulding, and shape during injection moulding after injection molding material solidification is difficult to ensure, probably produces the excessive and unlapped situation of chip of injection molding material, thus has influence on the FINAL APPEARANCE of product and the reliability of product.
In addition, because injection molding material needs the distance that flows through comparatively far away, these chips often can not directly be filled by traditional capsulation material expire, and easily produces pore, affects later stage whole package reliability.
Summary of the invention
An object of the present invention overcomes the deficiencies in the prior art, provides that a kind of dependability is high, the simple three-dimension flexible encapsulating structure of structure.
Another object of the present invention overcomes the deficiencies in the prior art, the injection molding forming method of a kind of three-dimension flexible encapsulating structure providing a kind of plastic sealing property, technique that can improve whole encapsulating structure simple and easy to operate.
According to technical scheme provided by the invention, described three-dimension flexible encapsulating structure, comprise flexible base, board, there is metal conduction layer in flexible base, board, flexible base, board is is integrally connected and composed by interval, the second linkage section and substrate lower layer section in interval, the first linkage section, substrate on substrate, substrate upper strata section is arranged in the top of substrate interval, substrate middle level section is positioned at the top of substrate lower layer section, on substrate, interval is connected with substrate lower layer section by the first linkage section, and in substrate, interval is connected with substrate lower layer section by the second linkage section;
On the substrate of flexible base, board, the lower surface of interval is fixed with the 3rd chip by end filler, in the substrate of the 3rd chip and flexible base, board, the upper surface of interval welds together, in the substrate of flexible base, board, the lower surface of interval is fixed with the first chip by end filler, tin ball is fixed with at the substrate lower layer section lower surface of flexible base, board, the second chip is fixed with by end filler at the substrate lower layer section upper surface of flexible base, board, second chip is together with the first chips welding, interval offers injection moulding hole with the substrate of flexible base, board, interval on the substrate of flexible base, board, first linkage section, interval in substrate, injection molding material is filled with in the cavity that second linkage section and substrate lower layer section surround.
The injection molding forming method of described three-dimension flexible encapsulating structure comprises the following steps:
A, get the flexible base, board with metal conduction layer, offer injection moulding hole at the correspondence position of flexible base, board, injection moulding hole penetrates described metal conduction layer;
B, get the first chip, the second chip and the 3rd chip, by the salient point on the first chip, the second chip and the 3rd chip and the pad solder above flexible base, board interconnected, to reach signal communication, first chip and the second street are welded on the flexible base, board on the left of injection moulding hole, on the flexible base, board of 3rd chips welding on the right side of injection moulding hole, after having welded the first chip, the second chip and the 3rd chip, at the filler of the under-filled end of the first chip, the second chip and the 3rd chip, to get rid of gas;
C, the upper surface of the upper surface of the first chip and the second chip to be welded together, stacked structure by the flexible base, board bending on the left of the second chip;
D, by the right side of the second chip flexible base, board bending and the lower surface of the upper surface of the 3rd chip and the flexible base, board of the first chip position is welded together, obtain packaging body semi-finished product;
E, be injected into packaging body semi-finished product from injection moulding hole to injection molding material, first chip of heap poststack, the second chip and the 3rd chip are covered completely, then toast, baking temperature controls at 155 ~ 195 DEG C, baking time controls at 2 ~ 4 hours, injection molding material is solidified completely, completes Shooting Technique;
F, the flexible base, board of the second chip position lower surface welding on tin ball, signal circuit is drawn out to extraneous port by tin ball.
Encapsulating structure of the present invention has that dependability is high, advantages of simple structure and simple.
Injection molding forming method of the present invention has the following advantages:
1, the present invention only need add perforate in flexible base, board manufacture process, and technique is simple, easy to operate;
2, the present invention is owing to decreasing the flow distance of plastic packaging material, improves the plastic sealing property of total;
3, the perforate of this programme is arranged on the center of packaging body, and when carrying out injection moulding colloid, colloid, to two sides symmetry flowing, better can control the shape after colloid curing molding and ensure the covering completely of chip.
Accompanying drawing explanation
Fig. 1 is the flexible base, board structural representation after perforate of the present invention.
Fig. 2 is the flexible base, board structural representation that the present invention has welded chip.
Fig. 3 is the structural representation after the present invention's first time bending.
Fig. 4 is the structural representation after the bending of the present invention's second time.
Fig. 5 is the structural representation after injection moulding of the present invention.
Fig. 6 is the structural representation after ball planted by device of the present invention.
Embodiment
Below in conjunction with specific embodiment, the invention will be further described.
A kind of three-dimension flexible encapsulating structure, as shown in Figure 6, comprise flexible base, board 1, there is metal conduction layer 8 in flexible base, board 1, flexible base, board 1 is is integrally connected and composed by interval, the second linkage section and substrate lower layer section in interval, the first linkage section, substrate on substrate, substrate upper strata section is arranged in the top of substrate interval, substrate middle level section is positioned at the top of substrate lower layer section, on substrate, interval is connected with substrate lower layer section by the first linkage section, and in substrate, interval is connected with substrate lower layer section by the second linkage section;
On the substrate of flexible base, board 1, the lower surface of interval is fixed with the 3rd chip 5 by end filler 6, 3rd chip 5 welds together with the upper surface of interval in the substrate of flexible base, board 1, in the substrate of flexible base, board 1, the lower surface of interval is fixed with the first chip 3 by end filler 6, tin ball 7 is fixed with at the substrate lower layer section lower surface of flexible base, board 1, the second chip 4 is fixed with by end filler 6 at the substrate lower layer section upper surface of flexible base, board 1, second chip 4 and the first chip 3 weld together, interval offers injection moulding hole 2 with the substrate of flexible base, board 1, interval on the substrate of flexible base, board 1, first linkage section, interval in substrate, injection molding material 10 is filled with in the cavity that second linkage section and substrate lower layer section surround.
An injection molding forming method for above-mentioned three-dimension flexible encapsulating structure, the method comprises the following steps:
A, get the flexible base, board 1 with metal conduction layer 8, offer injection moulding hole 2 at the correspondence position of flexible base, board 1, injection moulding hole 2 penetrates described metal conduction layer 8, is opening step;
B, get the first chip 3, second chip 4 and the 3rd chip 5, by the salient point on the first chip 3, second chip 4 and the 3rd chip 5 and the pad solder above flexible base, board 1 interconnected, to reach signal communication, first chip 3 and the second chip 4 interval are welded on the flexible base, board 1 on the left of injection moulding hole 2,3rd chip 5 is welded on the flexible base, board 1 on the right side of injection moulding hole 2, after having welded the first chip 3, second chip 4 and the 3rd chip 5, at the filler of the under-filled end 6 of the first chip 3, second chip 4 and the 3rd chip 5, to get rid of gas, be welding step;
C, by flexible base, board 1 bending on the left of the second chip 4, (namely the part after bending forms interval and the second linkage section in substrate, and the flexible base, board 1 of the second chip 4 position is substrate lower layer section) and the upper surface of the upper surface of the first chip 3 and the second chip 4 is welded together, stacked structure, is first time bending step;
D, the lower surface of the flexible base, board 1 of the upper surface of the 3rd chip 5 and the first chip 3 position to be welded together by flexible base, board 1 bending (namely the part after bending forms interval and the first linkage section on substrate) on the right side of the second chip 4, obtain packaging body semi-finished product, be second time bending step;
E, use injecting head 9 are injected into packaging body semi-finished product from injection moulding hole 2 by injection molding material 10, first chip 3, second chip 4 of heap poststack and the 3rd chip 5 are covered completely, then toast, baking temperature controls at 155 ~ 195 DEG C, baking time controls at 2 ~ 4 hours, injection molding material 10 is solidified completely, completes Shooting Technique, be injection step;
Tin ball 7 in the lower surface welding of f, flexible base, board 1 in the second chip 4 position, signal circuit is drawn out to extraneous port by tin ball 7, is device and plants ball step.
Claims (2)
1. a three-dimension flexible encapsulating structure, comprise flexible base, board (1), there is metal conduction layer (8) in flexible base, board (1), flexible base, board (1) is is integrally connected and composed by interval, the second linkage section and substrate lower layer section in interval, the first linkage section, substrate on substrate, substrate upper strata section is arranged in the top of substrate interval, substrate middle level section is positioned at the top of substrate lower layer section, on substrate, interval is connected with substrate lower layer section by the first linkage section, and in substrate, interval is connected with substrate lower layer section by the second linkage section;
On the substrate of flexible base, board (1), the lower surface of interval is fixed with the 3rd chip (5) by end filler (6), 3rd chip (5) welds together with the upper surface of interval in the substrate of flexible base, board (1), in the substrate of flexible base, board (1), the lower surface of interval is fixed with the first chip (3) by end filler (6), tin ball (7) is fixed with at the substrate lower layer section lower surface of flexible base, board (1), the second chip (4) is fixed with by end filler (6) at the substrate lower layer section upper surface of flexible base, board (1), second chip (4) and the first chip (3) weld together, interval offers injection moulding hole (2) with the substrate of flexible base, board (1), interval on the substrate of flexible base, board (1), first linkage section, interval in substrate, injection molding material (10) is filled with in the cavity that second linkage section and substrate lower layer section surround.
2. an injection molding forming method for three-dimension flexible encapsulating structure, is characterized in that the method comprises the following steps:
A, get the flexible base, board (1) with metal conduction layer (8), offer injection moulding hole (2) at the correspondence position of flexible base, board (1), injection moulding hole (2) penetrate described metal conduction layer (8);
B, get the first chip (3), second chip (4) and the 3rd chip (5), by the first chip (3), salient point on second chip (4) and the 3rd chip (5) and the pad solder above flexible base, board (1) interconnected, to reach signal communication, first chip (3) and the second chip (4) interval are welded on the flexible base, board (1) in left side, injection moulding hole (2), 3rd chip (5) is welded on the flexible base, board (1) on right side, injection moulding hole (2), weld the first chip (3), after second chip (4) and the 3rd chip (5), in the first chip (3), filler of the under-filled end (6) of the second chip (4) and the 3rd chip (5), to get rid of gas,
C, by the second chip (4) left side flexible base, board (1) bending and the upper surface of the upper surface of the first chip (3) and the second chip (4) is welded together, stacked structure;
D, by the second chip (4) right side flexible base, board (1) bending and the lower surface of the upper surface of the 3rd chip (5) and the flexible base, board (1) of the first chip (3) position is welded together, obtain packaging body semi-finished product;
E, be injected into packaging body semi-finished product from injection moulding hole (2) to injection molding material (10), first chip (3) of heap poststack, the second chip (4) are covered completely with the 3rd chip (5), then toast, baking temperature controls at 155 ~ 195 DEG C, baking time controls at 2 ~ 4 hours, injection molding material is solidified completely, completes Shooting Technique;
The upper tin ball (7) of lower surface welding of f, flexible base, board (1) in the second chip (4) position, signal circuit is drawn out to extraneous port finally by tin ball.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410758254.XA CN104465548A (en) | 2014-12-10 | 2014-12-10 | Three-dimensional flexible packaging structure and injection molding method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410758254.XA CN104465548A (en) | 2014-12-10 | 2014-12-10 | Three-dimensional flexible packaging structure and injection molding method thereof |
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| Publication Number | Publication Date |
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| CN104465548A true CN104465548A (en) | 2015-03-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410758254.XA Pending CN104465548A (en) | 2014-12-10 | 2014-12-10 | Three-dimensional flexible packaging structure and injection molding method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010593A (en) * | 2018-10-10 | 2019-07-12 | 浙江集迈科微电子有限公司 | A kind of three-dimensional stacked system in package technique |
| CN114823550A (en) * | 2022-06-27 | 2022-07-29 | 北京升宇科技有限公司 | Chip packaging structure and packaging method suitable for batch production |
| WO2024042750A1 (en) * | 2022-08-22 | 2024-02-29 | アルプスアルパイン株式会社 | Panel and production method |
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| JPS6341054A (en) * | 1986-08-06 | 1988-02-22 | Sanyo Electric Co Ltd | Bonding method of hybrid integrated circuit |
| JPH05175419A (en) * | 1991-11-28 | 1993-07-13 | Mazda Motor Corp | Method for sealing hybrid integrated circuit |
| JP2000307055A (en) * | 1999-04-21 | 2000-11-02 | Seiko Epson Corp | Semiconductor device, its manufacture, circuit substrate, and electronics |
| US20060223227A1 (en) * | 2005-04-04 | 2006-10-05 | Tessera, Inc. | Molding method for foldover package |
| KR100726892B1 (en) * | 2006-03-17 | 2007-06-14 | 한국과학기술원 | Three-dimensional chip stacking package module and preparation method thereof |
| CN100448104C (en) * | 2003-09-30 | 2008-12-31 | 国际商业机器公司 | Flexible assembly of stacked chips |
| US20090218668A1 (en) * | 2008-02-28 | 2009-09-03 | Silicon Matrix Pte. Ltd. | Double-side mountable MEMS package |
| CN103560125A (en) * | 2013-11-05 | 2014-02-05 | 华进半导体封装先导技术研发中心有限公司 | Three-dimensional flexible substrate electromagnetic shielding packaged structure and manufacturing method |
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2014
- 2014-12-10 CN CN201410758254.XA patent/CN104465548A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6341054A (en) * | 1986-08-06 | 1988-02-22 | Sanyo Electric Co Ltd | Bonding method of hybrid integrated circuit |
| JPH05175419A (en) * | 1991-11-28 | 1993-07-13 | Mazda Motor Corp | Method for sealing hybrid integrated circuit |
| JP2000307055A (en) * | 1999-04-21 | 2000-11-02 | Seiko Epson Corp | Semiconductor device, its manufacture, circuit substrate, and electronics |
| CN100448104C (en) * | 2003-09-30 | 2008-12-31 | 国际商业机器公司 | Flexible assembly of stacked chips |
| US20060223227A1 (en) * | 2005-04-04 | 2006-10-05 | Tessera, Inc. | Molding method for foldover package |
| KR100726892B1 (en) * | 2006-03-17 | 2007-06-14 | 한국과학기술원 | Three-dimensional chip stacking package module and preparation method thereof |
| US20090218668A1 (en) * | 2008-02-28 | 2009-09-03 | Silicon Matrix Pte. Ltd. | Double-side mountable MEMS package |
| CN103560125A (en) * | 2013-11-05 | 2014-02-05 | 华进半导体封装先导技术研发中心有限公司 | Three-dimensional flexible substrate electromagnetic shielding packaged structure and manufacturing method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010593A (en) * | 2018-10-10 | 2019-07-12 | 浙江集迈科微电子有限公司 | A kind of three-dimensional stacked system in package technique |
| CN110010593B (en) * | 2018-10-10 | 2020-09-29 | 浙江集迈科微电子有限公司 | Three-dimensional stacked system-in-package process |
| CN114823550A (en) * | 2022-06-27 | 2022-07-29 | 北京升宇科技有限公司 | Chip packaging structure and packaging method suitable for batch production |
| CN114823550B (en) * | 2022-06-27 | 2022-11-11 | 北京升宇科技有限公司 | Chip packaging structure and packaging method suitable for batch production |
| WO2024042750A1 (en) * | 2022-08-22 | 2024-02-29 | アルプスアルパイン株式会社 | Panel and production method |
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Application publication date: 20150325 |