CN106711098B - IC plastic capsulation structure and preparation method thereof - Google Patents
IC plastic capsulation structure and preparation method thereof Download PDFInfo
- Publication number
- CN106711098B CN106711098B CN201611133299.3A CN201611133299A CN106711098B CN 106711098 B CN106711098 B CN 106711098B CN 201611133299 A CN201611133299 A CN 201611133299A CN 106711098 B CN106711098 B CN 106711098B
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- lcp
- emc
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- encapsulated
- sealant
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- 239000004033 plastic Substances 0.000 title claims abstract description 31
- 229920003023 plastic Polymers 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000000565 sealant Substances 0.000 claims abstract description 27
- 238000000465 moulding Methods 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 13
- 238000004806 packaging method and process Methods 0.000 claims abstract description 11
- 230000011218 segmentation Effects 0.000 claims abstract description 4
- 239000011265 semifinished product Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 11
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 238000001746 injection moulding Methods 0.000 claims description 7
- 239000000047 product Substances 0.000 claims description 7
- 230000006835 compression Effects 0.000 claims description 4
- 238000007906 compression Methods 0.000 claims description 4
- 210000003205 muscle Anatomy 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 230000007812 deficiency Effects 0.000 abstract description 4
- 238000005538 encapsulation Methods 0.000 abstract description 2
- 230000008595 infiltration Effects 0.000 abstract description 2
- 238000001764 infiltration Methods 0.000 abstract description 2
- 239000002990 reinforced plastic Substances 0.000 abstract description 2
- 230000001737 promoting effect Effects 0.000 abstract 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 58
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 58
- 238000010586 diagram Methods 0.000 description 10
- 238000003754 machining Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The present invention relates to a kind of IC plastic capsulation structures and preparation method thereof, it is characterized in that: including LCP substrate, EMC encapsulated layer and LCP sealant, LCP substrate includes LCP pre-molding layer and lead frame, in the upper surface chip of LCP substrate, EMC encapsulated layer, the outer envelope LCP sealant of EMC encapsulated layer are encapsulated on chip.The preparation method of the IC plastic capsulation structure, comprising the following steps: (1) LCP substrate is formed using LCP material in the lower surface of lead frame；(2) in LCP upper surface of base plate assembling chip；(3) EMC encapsulated layer is encapsulated on chip；(4) extra EMC encapsulated layer is removed；(5) in EMC encapsulated layer outer envelope LCP sealant；(6) LCP pre-molding layer extra below extra LCP sealant and lead frame is removed；(7) semi-finished product segmentation molding is independent packaging body.Present invention improves over deficiency of the Plastic Package based on EMC in terms of waterproof impervious, the waterproof air infiltration for promoting Plastic Package enters performance, thus the reliability of reinforced plastics encapsulation.
Description
Technical field
The present invention relates to a kind of IC(integrated circuits) plastic capsulation structure and preparation method thereof, belong to IC manufacturing skill
Art field.
Background technique
Plastic Package is better than air-tight packaging in terms of size, weight, performance, cost.Estimation plastic device accounts for world quotient
With the 97% of chip package market.But it is mainly epoxy resin that common plastics, which encapsulate used encapsulating material, anti-entering property of aqueous vapor
Can be poor, failure mechanism such as burn into crackle, interface debonding highly significant, these deficiencies that aqueous vapor induces limit Plastic Package
Application in highly reliable integrated antenna package.
Summary of the invention
The purpose of the present invention is overcoming the deficiencies in the prior art, a kind of IC plastic capsulation structure and its preparation are provided
Method improves deficiency of the Plastic Package based on EMC in terms of waterproof impervious, promotes the waterproof gas accessibility of Plastic Package
Can, thus the reliability of reinforced plastics encapsulation.
According to technical solution provided by the invention, a kind of IC plastic capsulation structure, it is characterized in that: including LCP substrate, EMC
Encapsulated layer and LCP sealant, LCP substrate include LCP pre-molding layer and the lead frame for being set to LCP pre-molding layer upper surface；
In the upper surface chip of the LCP substrate, chip is packaged in the upper surface of LCP substrate by EMC encapsulated layer, is encapsulated in EMC
One layer of LCP sealant of outer envelope of layer.
The preparation method of the IC plastic capsulation structure, characterized in that the following steps are included:
(1) LCP substrate is formed by pre-molding using LCP material in the lower surface of lead frame；
(2) in LCP upper surface of base plate assembling chip；
(3) chip after assembling is encapsulated using epoxy resin, obtains EMC encapsulated layer；
(4) according to the shape of product, size requirement, extra EMC encapsulated layer is removed；
(5) in one layer of LCP material of EMC encapsulated layer outer envelope, LCP sealant is obtained；
(6) according to the shape of product, size requirement, it is extra below extra LCP sealant and lead frame to remove
LCP pre-molding layer；
(7) the semi-finished product segmentation molding that step (6) obtains is independent packaging body.
Further, load, bonding technology assembling chip are used in the LCP upper surface of base plate.
Further, the chip is encapsulated using compression mould or injection molding mold technique.
Further, one layer of LCP sealing is encapsulated using the injection molding technique of injection mold outside the EMC encapsulated layer
Layer.
Further, the packaging body that the step obtains is hited muscle, deflashing, plating, printing, molding, and independence is obtained
Packaging body.
Further, the overall thickness of the EMC encapsulated layer and LCP sealant is 0.25~1.2mm.
The present invention compared with the prior art have the advantage that Plastic Package of the present invention using LCP material substrate with
EMC is encapsulated in inside by LCP outer containment layer, compared with existing all EMC material encapsulatings, encapsulating structure tool of the invention
There is stronger waterproof gas infiltration capability.
Detailed description of the invention
Fig. 1 is the schematic diagram of IC plastic capsulation structure of the present invention.
Fig. 2-1~Fig. 2-9 is the flow chart of the preparation method for stating IC plastic capsulation structure of the invention.Wherein:
Fig. 2-1 is the schematic diagram of the LCP substrate.
Fig. 2-2 is the schematic diagram in LCP substrate surface assembling chip.
Fig. 2-3 is the schematic diagram for using epoxy resin to encapsulate chip.
Fig. 2-4 is the schematic diagram of EMC encapsulated layer redundance.
Fig. 2-5 is the schematic diagram of the extra EMC encapsulated layer of removal.
Fig. 2-6 is the schematic diagram in EMC encapsulated layer outer envelope LCP sealant.
Fig. 2-7 is the schematic diagram of redundance in LCP sealant and LCP pre-molding layer.
Fig. 2-8 is the schematic diagram of the extra LCP sealant and LCP pre-molding layer of removal.
Fig. 2-9 is to obtain the schematic diagram of individual packages body.
Figure label: lead frame 1, LCP pre-molding layer 2, EMC encapsulated layer 3, LCP sealant 4, chip 5.
Specific embodiment
Below with reference to specific attached drawing, the invention will be further described.
IC plastic capsulation structure of the present invention as shown in Figure 1:, including LCP substrate, EMC encapsulated layer 3 and LCP sealant
4, LCP substrates include LCP pre-molding layer 2 and the lead frame 1 for being set to 2 upper surface of LCP pre-molding layer；In the LCP substrate
Upper surface chip 5, chip 5 is packaged in the upper surface of LCP substrate by EMC encapsulated layer 3, in the external packet of EMC encapsulated layer 3
Seal one layer of LCP sealant 4.
The preparation method of the IC plastic capsulation structure, comprising the following steps:
(1) as shown in Fig. 2-1, LCP substrate is formed by pre-molding using LCP material in the lower surface of lead frame 1；
(2) as shown in Fig. 2-2, using the load of standard, bonding technology in LCP upper surface of base plate assembling chip 5；
(3) as Figure 2-3, using compression mould or injection molding mold technique, will on the chip 5 after assembling using epoxy resin into
Row encapsulating, obtains EMC encapsulated layer 3；
(4) according to the shape of product, size requirement, step (3) are completed with the packaging body of EMC encapsulating, it is extra to be calculated
EMC encapsulated layer 3 position；As in Figure 2-4, the part in EMC encapsulated layer 3 other than dotted line is extra part；
(5) as shown in Figure 2-5, using machining process, EMC encapsulated layer 3 extra other than dotted line in Fig. 2-4 is gone
It removes；
(6) as shown in figures 2-6, using the injection molding technique of injection mold, in EMC encapsulated layer 3 outer envelope, one layer of LCP material
Matter obtains LCP sealant 4；
(7) as illustrated in figs. 2-7, according to the shape of product, size requirement, to the packaging body for having completed LCP sealant 4,
The position of extra LCP material is calculated；Part in Fig. 2-7, in LCP sealant 4 and LCP pre-molding layer 2 other than dotted line
For extra part；
(8) as illustrated in figs. 2 through 8, using machining process, extra 1 lower section of LCP sealant 4 and lead frame is removed
Extra LCP pre-molding layer 2；
(9) as shown in figs. 2-9, step (8) is obtained by conventional hit muscle, deflashing, plating, printing, forming method
Semi-finished product segmentation molding be independent packaging body.
In practical applications, the overall thickness of EMC encapsulated layer 3 and LCP sealant 4 is usually in 0.25~1.2mm, EMC packet
3 thickness of sealing is limited to the thickness of its inside chip, and 4 thickness of LCP sealant is by weaker flowing under LCP molten condition
Property, the two thickness is not associated with necessarily apparently at present.
IC plastic capsulation structure of the present invention uses LCP(liquid crystal polymer on the lead frames) pass through pre-molding shape
Package substrate at substrate as integrated circuit, after completing load, bonding on the substrate, using EMC(epoxy resin) pass through
Chip and bonding wire are encapsulated by compression mould or injection molding mold technique, and are carried out primary by the way of machining and be processed into
Type EMC epoxy resin, then covered epoxy resin using LCP, LCP extra around pin is then passed through into machining
Method post forming is carried out to LCP liquid crystal polymer, remove extra LCP around pin, finally by the muscle that hits, go to fly
Side, plating, molding form a complete independent plastic packaging body.The present invention can solve LCP material cannot be directly to lead key
The problem of IC of conjunction is encapsulated, because it has the ability for more preferably resisting the erosions such as aqueous vapor than common EMC material, thus in height
There is preferable application prospect in reliable Plastic Package product.
Claims (7)
1. a kind of IC plastic capsulation structure, it is characterized in that: including LCP substrate, EMC encapsulated layer (3) and LCP sealant (4), LCP
Substrate includes LCP pre-molding layer (2) and the lead frame (1) for being set to LCP pre-molding layer (2) upper surface；In the LCP substrate
Upper surface chip (5), chip (5) is packaged in the upper surface of LCP substrate by EMC encapsulated layer (3), in EMC encapsulated layer (3)
One layer of LCP sealant (4) of outer envelope.
2. a kind of preparation method of IC plastic capsulation structure, characterized in that the following steps are included:
(a) LCP substrate is formed by pre-molding using LCP material in the lower surface of lead frame (1)；
(b) in LCP upper surface of base plate assembling chip (5)；
(c) chip (5) after assembling is encapsulated using epoxy resin, obtains EMC encapsulated layer (3)；
(d) according to the shape of product, size requirement, extra EMC encapsulated layer (3) is removed；
(e) in one layer of LCP material of EMC encapsulated layer (3) outer envelope, LCP sealant (4) are obtained；
(f) according to the shape of product, size requirement, it is extra below extra LCP sealant (4) and lead frame (1) to remove
LCP pre-molding layer (2)；
(g) the semi-finished product segmentation molding that step (f) obtains is independent packaging body.
3. the preparation method of IC plastic capsulation structure as claimed in claim 2, it is characterized in that: in the LCP upper surface of base plate
Using load, bonding technology assembling chip (5).
4. the preparation method of IC plastic capsulation structure as claimed in claim 2, it is characterized in that: the chip (5) is using compression
Mould or injection molding mold technique are encapsulated.
5. the preparation method of IC plastic capsulation structure as claimed in claim 2, it is characterized in that: the EMC encapsulated layer (3) outside
Portion one layer of LCP sealant (4) is encapsulated using the injection molding technique of injection mold.
6. the preparation method of IC plastic capsulation structure as claimed in claim 2, it is characterized in that: the envelope that the step (f) obtains
Dress body is hited muscle, deflashing, plating, printing, molding, and independent packaging body is obtained.
7. the preparation method of IC plastic capsulation structure as claimed in claim 2, it is characterized in that: the EMC encapsulated layer (3) and
The overall thickness of LCP sealant (4) is 0.25~1.2mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611133299.3A CN106711098B (en) | 2016-12-10 | 2016-12-10 | IC plastic capsulation structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611133299.3A CN106711098B (en) | 2016-12-10 | 2016-12-10 | IC plastic capsulation structure and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN106711098A CN106711098A (en) | 2017-05-24 |
| CN106711098B true CN106711098B (en) | 2019-04-12 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108878299A (en) * | 2018-02-23 | 2018-11-23 | 无锡中微高科电子有限公司 | The preparation method of frame clsss integrated circuit Plastic Package is carried out by laser |
| CN108899306A (en) * | 2018-07-13 | 2018-11-27 | 中国电子科技集团公司第五十八研究所 | A kind of integrated circuit plastics seal structure and preparation method thereof |
| CN110739277A (en) * | 2019-09-11 | 2020-01-31 | 珠海格力电器股份有限公司 | kinds of packaging structure and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0927573A (en) * | 1995-07-13 | 1997-01-28 | Mitsubishi Electric Corp | Semiconductor device |
| JP2003335365A (en) * | 2002-05-17 | 2003-11-25 | Sumitomo Chem Co Ltd | Press-through-pack package |
| CN103208488A (en) * | 2012-01-12 | 2013-07-17 | 盈胜科技股份有限公司 | Thin-type multilayer array type light-emitting diode optical engine |
-
2016
- 2016-12-10 CN CN201611133299.3A patent/CN106711098B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0927573A (en) * | 1995-07-13 | 1997-01-28 | Mitsubishi Electric Corp | Semiconductor device |
| JP2003335365A (en) * | 2002-05-17 | 2003-11-25 | Sumitomo Chem Co Ltd | Press-through-pack package |
| CN103208488A (en) * | 2012-01-12 | 2013-07-17 | 盈胜科技股份有限公司 | Thin-type multilayer array type light-emitting diode optical engine |
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| CN106711098A (en) | 2017-05-24 |
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