CN104465320A - 一种cigs薄膜的非真空制备方法 - Google Patents
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Abstract
本发明公开了一种CIGS薄膜的非真空制备方法。本发明的实施步骤为:采用热注入有机合成法制备出油胺包覆的CIGS纳米晶,不经离心清洗直接将油胺包覆的CIGS纳米晶配置成纳米油墨;采用非真空方法进行涂覆,涂覆一次后在气氛保护下进行热分解退火;退火后待其降温继续进行涂覆,重复上述过程数次,得到一定厚度的CIGS前驱体薄膜;在气氛保护下采用固体硒源进行硒化退火,得到最终CIGS薄膜。本发明在传统非真空纳米油墨法制备CIGS薄膜的工艺基础上简化了工艺流程,提高了薄膜的致密性与平整度。
Description
技术领域
本发明属于薄膜太阳能电池制备技术领域,具体涉及一种CIGS薄膜的非真空制备方法。
背景技术
太阳能电池作为一种清洁可再生的能源,已经在全球范围内得到了巨大的商业化。而薄膜太阳能电池因其具有成本低、吸收系数高、质量轻并且可柔性化等优点在太阳能电池中占有了一定的市场。CIGS作为第三代薄膜太阳能电池,相较于传统电池具有耗材少,成本低,抗辐射性能好,效率高等优点,是最有希望降低光伏发电成本的高效薄膜太阳能电池。
制备CIGS薄膜太阳能电池有多种工艺,包括真空技术和非真空技术。真空方法主流工艺如多源共蒸发法和溅镀后硒化法,需要昂贵的真空设备,不利于太阳能电池成本的降低和大面积产业化。非真空技术主要有电化学沉积、丝网印刷、喷涂热解等方法,相对来说,非真空制备方法设备简单易于实现,但在制备过程中存在着容易引入碳杂质,晶粒细小,薄膜疏松多孔,表面平整性差等缺点,限制了光电转化效率的进一步提高。
对于非真空纳米油墨法制备CIGS薄膜,通常的工艺流程是先制备出CIGS纳米晶或Cu/In/Ga氧化物前驱体等,经离心、清洗、干燥后,重新分散在苯类或醇类的有机溶剂中,加入一定量的有机粘结剂配制成具有一定粘度的纳米油墨,然后进行多次涂覆、干燥的工艺循环后进行薄膜整体的硒化退火。然而离心、加热干燥等工艺,常常会造成纳米颗粒的不可复原性团聚,经离心、干燥后的纳米颗粒,重新进行研磨、超声分散等再分散工艺,所配置出的油墨能够达到的分散性有限,导致制备出的薄膜表面平整性较差,存在较多缺陷;同时由于非真空方法通常采用有机物作为溶剂和添加剂,退火过程中其挥发、分解易产生气孔导致制备出的薄膜疏松多孔,降低了太阳能电池器件的填充因子;同时有机溶剂、有机添加剂挥发、分解不完全时,容易在薄膜下层出现富碳层,这都直接影响了薄膜的性能,降低了太阳能电池器件的性能。
发明内容
本发明旨在克服现有技术的不足,提供一种CIGS薄膜的非真空制备方法。
为了达到上述目的,本发明提供的技术方案为:
所述CIGS薄膜的非真空制备方法包括以下步骤:
(1)采用热注入有机合成法制备油胺包覆的CIGS纳米晶;
(2)将油胺包覆的CIGS纳米晶与粘接剂按质量比(5.45~10.90):1混合,调配成适于涂覆的CIGS纳米油墨;
(3)将CIGS纳米油墨均匀涂覆在衬底上,制备成前驱体薄膜;
(4)将前驱体薄膜置于装有硒粉的双温管式炉中,通入保护气氛,进行硒化,硒化参数为:硒源温区温度为350~450℃,薄膜温区为550~600℃,硒化时间为40~60min;即得CIGS薄膜。
优选地,步骤(1)所述热注入有机合成法是以铜、铟、镓的乙酰丙酮盐以及硒粉作为原料,铜、铟、镓、硒源的摩尔比为3:(1.8~2.1):(0.9~1.2):(6~8),以油胺和三正辛基膦作为溶剂,油胺添加量为1mmol铜源对应5~7ml油胺,得到铜、铟、镓源与油胺的混合液;三正辛基膦添加量为1mmol硒粉对应0.8~1ml三正辛基膦,得到硒粉与三正辛基膦的混合液;在无水无氧的保护气氛下、温度为270~290°C的条件下,将硒粉与三正辛基膦的混合液快速注入到铜、铟、镓源与油胺的混合液中,并反应3~5h,得到油胺包覆的CIGS纳米晶;所述保护气氛为氮气、氩气、氦气、氖气中的至少一种。
优选地,步骤(2)所述粘结剂为乙基纤维素、甲基纤维素、聚乙烯醇中的至少一种。
优选地,步骤(2)所述粘结剂为质量比浓度为5%的乙基纤维素。将乙基纤维素溶解于松油醇,或甲苯与酒精体积比4:1的混合溶液中,常温搅拌2小时左右,配置成质量比为5%的乙基纤维素溶液。将配置好的乙基纤维素溶液加入到油胺包覆的CIGS纳米晶中,常温下长时间搅拌,调配成适于涂覆的CIGS纳米油墨。
优选地,步骤(3)是采用印刷法、旋凃法或刮涂法将CIGS纳米油墨均匀涂覆在衬底上得到湿膜,然后在保护气氛下对湿膜进行热分解退火得到多晶干膜,再在衬底上继续涂覆新的CIGS纳米油墨;循环上述过程多次后得到厚度为2~4μm的前驱体薄膜;所述热分解退火温度为350~450℃,时间为5~10min。
优选地,所述衬底为Mo片、镀Mo玻璃或镀Mo柔性衬底中的一种,镀Mo柔性衬底包括镀Mo聚酰亚胺、不锈钢带、铝箔、钛箔。
优选地,步骤(4)所述保护气氛为氮气、氩气、氦气、氖气中的至少一种。
优选地,步骤(4)中的硒粉是通过硒化管置于双温管式炉的,采用大管套小管(硒化管)的方式置于双温管式炉中进行硒化。硒粉质量与硒化管体积比为0.9~1.1g/L。
下面对本发明作进一步说明:
本发明的制备过程是首先采用热注入有机合成法制备油胺包覆的CIGS纳米晶;然后将油胺包覆的CIGS纳米晶直接调配成CIGS纳米油墨;采用多次涂覆、热分解的循环工艺制备CIGS前驱体薄膜;最后对前驱体薄膜进行硒化退火得到CIGS薄膜。
本发明的创新性在于采用热注入有机合成法制备出油胺包覆的CIGS纳米晶,不经离心清洗工艺直接配置成纳米油墨,利用油胺包覆的CIGS纳米晶其良好的分散性来改善非真空方法涂覆用纳米油墨的质量,减少CIGS薄膜的表面缺陷;同时后续采用多次涂覆多次热解的反复循环工艺,通过对热分解温度、时间、循环次数的控制,充分的去除残留的有机溶剂和有机添加剂,保证薄膜成分;同时多次涂覆多次热分解的循环工艺,通过降低单次热分解薄膜的厚度来改善由于有机溶剂、有机添加剂的挥发、分解所产生的的气孔对薄膜整体的影响,制备出更为致密的薄膜。经SEM观察,薄膜具有大晶粒,且表面致密、平整;经XRD测试,制备的薄膜具有纯净的四元相,不含其它杂质。本发明在传统非真空CIGS纳米油墨涂覆工艺的基础上简化了油墨制备的工艺流程,同时提高了涂覆薄膜的质量,制备出更为平整、致密的CIGS薄膜,提高了后续器件的填充因子,使得薄膜太阳能电池具有更高的转换效率,对CIGS太阳能电池非真空方法的产业化发展具有推动作用。
总之,本发明提供了一种表面更为平整、致密且成分均一的CIGS薄膜的制备方法,解决了传统CIGS非真空制备技术中薄膜疏松多孔、表面不平整、有机物分解不完全的问题。
附图说明
图1为实施例1的CIGS薄膜X射线衍射图;
图2为实施例1的CIGS薄膜SEM表面形貌图;
图3为实施例2的CIGS薄膜SEM表面形貌图。
具体实施方式
实施例1
本实验采用油胺包覆CIGS纳米晶调油,采用多次印刷多次热分解后整体硒化退火的工艺制备CIGS薄膜,具体步骤如下:
一、热注入有机合成法制备油胺包覆的CIGS纳米晶
①分别称取3mmol乙酰丙酮化铜,2.1mmol乙酰丙酮化铟,0.9mmol乙酰丙酮化镓溶于15ml油胺,置于100ml三颈瓶中;称取6mmol硒粉置于手套箱中,在气氛保护下称取6mlTOP,将硒粉溶于TOP中,置于100ml加液漏斗中,振荡至其完全溶解;
②反应装置主要由反应烧瓶、冷凝管、鼓泡器、加液器构成,均为市售的常规装置;容器组装、密封完毕后,将反应烧瓶升温至80℃,采用氮气鼓泡15min,抽真空15min的循环工艺对反应体系进行2h的洗气处理;
③洗气完毕后将反应烧瓶升温至280℃,到温后将加液器加液阀门开启,使硒液快速注入到反应烧瓶中,保温4h,自然降温后得到油胺包覆的CIGS纳米晶。
二、CIGS纳米油墨的调配
①称取适量乙基纤维素溶于有机溶剂中,充分加温搅拌至其完全溶解,有机溶剂为甲醇、乙醇、松油醇、甲苯中的一种或其组合;
②向油胺包覆CIGS纳米晶中加入适量上述乙基纤维素溶液,常温搅拌得到具有一定粘度、均一的CIGS纳米油墨。
三、前驱体薄膜的制备
①采用丝网印刷方法,在衬底上印刷一次得到湿膜;
②将上述涂覆方法制备出的湿膜置入管式炉中,在保护气氛下400℃热分解7min;降温后取出重复上述过程3次,得到2~4μm厚的前驱体薄膜。
四、前驱体硒化退火制备CIGS薄膜
①称量适量硒粉,将硒粉与CIGS前驱体薄膜分别置于双温管式炉两侧,采用流通氮气进行气氛保护;硒粉是通过硒化管置于双温管式炉的,采用大管套小管(硒化管)的方式置于双温管式炉中进行硒化。硒粉质量与硒化管体积比为0.9~1.1g/L;
②通过位置调整使前驱体薄膜开始时处于低温区,硒源处于温区外;待高温区升温至500℃,低温区升温至200℃后,将石英管推入,使得前驱体薄膜和硒源分别进入高、低温区实现前驱体薄膜的快速升温;两温区继续分别升温至550℃和350℃,保温40min后自然降温得到CIGS薄膜。
所得CIGS薄膜X射线衍射图如图1所示,所得CIGS薄膜SEM表面形貌图如图2所示。
实施例2
本实验作为实施例1的对比例,制备出的CIGS纳米晶经离心清洗后重新分散进行油墨调配,采用多次涂覆、干燥后整体硒化退火的工艺制备CIGS薄膜,具体步骤如下:
一、热注入有机合成法制备CIGS纳米晶
①分别称取3mmol乙酰丙酮化铜,2.1mmol乙酰丙酮化铟,0.9mmol乙酰丙酮化镓溶于15ml油胺,置于100ml三颈瓶中;称取6mmol硒粉置于手套箱中,在气氛保护下称取6mlTOP,将硒粉溶于TOP中,置于100ml加液漏斗中,振荡至其完全溶解;
②反应装置主要由反应烧瓶、冷凝管、鼓泡器、加液器构成;容器组装、密封完毕后,将反应烧瓶升温至80℃,采用氮气鼓泡15min,抽真空15min的循环工艺对反应体系进行2h的洗气处理;
③洗气完毕后将反应烧瓶升温至280℃,到温后将加液器加液阀门开启,使硒液快速注入到反应烧瓶中,保温4h,自然降温后得到油胺包覆的CIGS纳米晶。
二、CIGS纳米油墨的调配
①将热注入制备的纳米晶加入过量异丙醇进行离心,取其沉淀,加入适量异丙醇与正己烷的混合溶液进行超声分散,其中异丙醇与正己烷的体积比为2:1;
②将上述溶液再次进行离心,重复上述过程数次后将离心出的沉淀重新分散于甲苯中;
③加入适量乙基纤维素溶液,充分加温搅拌后得到一定粘度的CIGS纳米油墨。
三、前驱体薄膜的制备
①采用丝网印刷方法,在衬底上印刷一次得到湿膜;
②将湿膜置入烘箱中,在空气中100℃干燥15min,重复上述过程3次,得到一定厚度的前驱体薄膜。
四、前驱体硒化退火制备CIGS薄膜
①称量适量硒粉,将硒粉与CIGS前驱体薄膜分别置于双温管式炉两侧,采用流通氮气进行气氛保护;
②通过位置调整使前驱体薄膜开始时处于低温区,硒源处于温区外;待高温区升温至500℃,低温区升温至200℃后,将石英管推入,使得前驱体薄膜和硒源分别进入高、低温区实现前驱体薄膜的快速升温;两温区继续分别升温至550℃和350℃,保温40min后自然降温得到CIGS薄膜。
所得CIGS薄膜SEM表面形貌图如图3所示。
从图1可以看出实施例1制备出的CIGS薄膜相纯净,不含杂相。
从图2、3可以看出,实施例1的CIGS薄膜更为平整致密,实施例2中的CIGS薄膜表面平整性较差,疏松多孔,说明采用油胺包覆的纳米晶直接进行调油涂覆,同时采用涂覆~热分解的循环工艺能有效的改善薄膜形貌,提高薄膜质量。
即,采用本发明方法制备得到的CIGS薄膜在成分均一的前提下拥有更为平整致密的表面形貌,而理论上更为平整致密的大晶粒CIGS薄膜将使得上下层间形成更好的接触,提高器件填充因子,降低界面损耗,提升器件性能。
Claims (8)
1. 一种CIGS薄膜的非真空制备方法,其特征在于,所述方法包括以下步骤:
(1)采用热注入有机合成法制备油胺包覆的CIGS纳米晶;
(2)将油胺包覆的CIGS纳米晶与粘接剂按质量比(5.45~10.90):1混合,调配成适于涂覆的CIGS纳米油墨;
(3)将CIGS纳米油墨均匀涂覆在衬底上,制备成前驱体薄膜;
(4)将前驱体薄膜置于装有硒粉的双温管式炉中,通入保护气氛,进行硒化,硒化参数为:硒源温区温度为350~450℃,薄膜温区为550~600℃,硒化时间为40~60min;即得CIGS薄膜。
2.如权利要求1所述的方法,其特征在于,步骤(1)所述热注入有机合成法是以铜、铟、镓的乙酰丙酮盐以及硒粉作为原料,铜、铟、镓、硒源的摩尔比为3:(1.8~2.1):(0.9~1.2):(6~8),以油胺和三正辛基膦作为溶剂,油胺添加量为1mmol铜源对应5~7ml油胺,得到铜、铟、镓源与油胺的混合液;三正辛基膦添加量为1mmol硒粉对应0.8~1ml三正辛基膦,得到硒粉与三正辛基膦的混合液;在无水无氧的保护气氛下、温度为270~290°C的条件下,将硒粉与三正辛基膦的混合液快速注入到铜、铟、镓源与油胺的混合液中,并反应3~5h,得到油胺包覆的CIGS纳米晶;所述保护气氛为氮气、氩气、氦气、氖气中的至少一种。
3.如权利要求2所述的方法,其特征在于,步骤(2)所述粘结剂为乙基纤维素、甲基纤维素、聚乙烯醇中的至少一种。
4.如权利要求3所述的方法,其特征在于,步骤(2)所述粘结剂为质量比浓度为5%的乙基纤维素。
5.如权利要求1所述的方法,其特征在于,步骤(3)是采用印刷法、旋凃法或刮涂法将CIGS纳米油墨均匀涂覆在衬底上得到湿膜,然后在保护气氛下对湿膜进行热分解退火得到多晶干膜,再在衬底上继续涂覆新的CIGS纳米油墨;循环上述过程多次后得到厚度为2~4μm的前驱体薄膜;所述热分解退火温度为350~450℃,时间为5~10min。
6.如权利要求5所述的方法,其特征在于,所述衬底为Mo片、镀Mo玻璃或镀Mo柔性衬底中的一种。
7.如权利要求1所述的方法,其特征在于,步骤(4)所述保护气氛为氮气、氩气、氦气、氖气中的至少一种。
8.如权利要求1所述的方法,其特征在于,步骤(4)中的硒粉是通过硒化管置于双温管式炉的,硒粉质量与硒化管体积比为0.9~1.1g/L。
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110931259A (zh) * | 2019-11-27 | 2020-03-27 | 湖北科技学院 | 一种银镓铟硒/氧化物薄膜电极的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201300322A (zh) * | 2011-06-28 | 2013-01-01 | Shanghai Inst Ceramics | 銅銦鎵硫硒薄膜太陽電池光吸收層的製備方法 |
US20130048074A1 (en) * | 2011-08-22 | 2013-02-28 | Korea Insitute Of Science And Technology | Method for producing thin-film light-absorbing layer and method for manufacturing thin-film solar cell including the same |
CN103346206A (zh) * | 2013-06-09 | 2013-10-09 | 深圳市亚太兴实业有限公司 | 一种表面富硫的铜铟镓硒薄膜的制备方法 |
-
2014
- 2014-11-04 CN CN201410611748.5A patent/CN104465320A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201300322A (zh) * | 2011-06-28 | 2013-01-01 | Shanghai Inst Ceramics | 銅銦鎵硫硒薄膜太陽電池光吸收層的製備方法 |
US20130048074A1 (en) * | 2011-08-22 | 2013-02-28 | Korea Insitute Of Science And Technology | Method for producing thin-film light-absorbing layer and method for manufacturing thin-film solar cell including the same |
CN103346206A (zh) * | 2013-06-09 | 2013-10-09 | 深圳市亚太兴实业有限公司 | 一种表面富硫的铜铟镓硒薄膜的制备方法 |
Non-Patent Citations (1)
Title |
---|
黄齐鸣等: "《油墨调配、涂覆及热处理工艺对CIGS薄膜形貌和成分的影响》", 《中国科技论文在线》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110931259A (zh) * | 2019-11-27 | 2020-03-27 | 湖北科技学院 | 一种银镓铟硒/氧化物薄膜电极的制备方法 |
CN110931259B (zh) * | 2019-11-27 | 2022-02-08 | 湖北科技学院 | 一种银镓铟硒/氧化物薄膜电极的制备方法 |
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