CN104425668B - 一种led芯片及其制备方法 - Google Patents
一种led芯片及其制备方法 Download PDFInfo
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- CN104425668B CN104425668B CN201310409722.8A CN201310409722A CN104425668B CN 104425668 B CN104425668 B CN 104425668B CN 201310409722 A CN201310409722 A CN 201310409722A CN 104425668 B CN104425668 B CN 104425668B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
Abstract
Description
Claims (12)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310409722.8A CN104425668B (zh) | 2013-09-11 | 2013-09-11 | 一种led芯片及其制备方法 |
Applications Claiming Priority (1)
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CN201310409722.8A CN104425668B (zh) | 2013-09-11 | 2013-09-11 | 一种led芯片及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN104425668A CN104425668A (zh) | 2015-03-18 |
CN104425668B true CN104425668B (zh) | 2017-11-17 |
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CN201310409722.8A Active CN104425668B (zh) | 2013-09-11 | 2013-09-11 | 一种led芯片及其制备方法 |
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CN (1) | CN104425668B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109671814A (zh) * | 2018-11-21 | 2019-04-23 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片及其制造方法 |
CN112768579A (zh) * | 2021-02-07 | 2021-05-07 | 厦门乾照光电股份有限公司 | 一种半导体外延结构及其制作方法、led芯片 |
CN114497297B (zh) * | 2021-12-21 | 2023-02-24 | 重庆康佳光电技术研究院有限公司 | 红光外延层及其生长方法、红光led芯片及显示面板 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1741290A (zh) * | 2004-08-27 | 2006-03-01 | 中国科学院半导体研究所 | 蓝光、黄光量子阱堆叠结构白光发光二极管及制作方法 |
CN102820395A (zh) * | 2011-06-07 | 2012-12-12 | 山东华光光电子有限公司 | 一种采用势垒高度渐变量子垒的led结构及其制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101438808B1 (ko) * | 2007-10-08 | 2014-09-05 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
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2013
- 2013-09-11 CN CN201310409722.8A patent/CN104425668B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1741290A (zh) * | 2004-08-27 | 2006-03-01 | 中国科学院半导体研究所 | 蓝光、黄光量子阱堆叠结构白光发光二极管及制作方法 |
CN102820395A (zh) * | 2011-06-07 | 2012-12-12 | 山东华光光电子有限公司 | 一种采用势垒高度渐变量子垒的led结构及其制备方法 |
Non-Patent Citations (1)
Title |
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In组分渐变提高InGaN/GaN多量子阱发光二极管发光性能;朱丽虹等;《物理学报》;20100715;第59卷(第7期);第4996页右栏第6-8行,第4997页左栏第1-19行 * |
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CN104425668A (zh) | 2015-03-18 |
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Effective date of registration: 20191230 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |