CN104425542B - A kind of organic light-emitting display device and preparation method thereof - Google Patents
A kind of organic light-emitting display device and preparation method thereof Download PDFInfo
- Publication number
- CN104425542B CN104425542B CN201310375937.2A CN201310375937A CN104425542B CN 104425542 B CN104425542 B CN 104425542B CN 201310375937 A CN201310375937 A CN 201310375937A CN 104425542 B CN104425542 B CN 104425542B
- Authority
- CN
- China
- Prior art keywords
- layer
- electrode
- display device
- organic light
- emitting display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of organic light-emitting display device, the ultraviolet blocking layer suitable with first electrode thickness is set over the passivation layer, use of the metal oxide semiconductor films transistor in top emitting organic light emitting diode device can be not only realized, and the ultraviolet blocking layer can play a part of pixel confining layers；Using metal-oxide semiconductor (MOS) as semiconductor layer, its carrier mobility is high, can greatly improve charge-discharge velocities of the TFT to pixel electrode, improves the response speed of pixel, realizes faster refresh rate；Display device uses emission structure at top, and aperture opening ratio is high；And it is provided with light removing layer, with the synergy of the ultraviolet blocking layer, not only can further stop ultraviolet, and the light losing that total reflection is brought can be reduced, further improve the luminous efficiency of display device；Preparation technology is simple, it is easy to implement.
Description
Technical field
The present invention relates to display field, and in particular to a kind of organic light-emitting display device and preparation method thereof.
Background technology
Active matrix organic light-emitting device（English full name Active Matrix Organic Lighting Emitting
Display, abbreviation AMOLED）, utilize thin film transistor (TFT)（English full name Thin Film Transistor, abbreviation TFT）, collocation
Electric capacity stores signal, to control Organic Light Emitting Diode（English full name Organic Lighting Emitting Diode, letter
Claim OLED）Brightness and GTG performance.Each individually AMOLED has complete second electrode, organic function layer and the first electricity
Pole, first electrode covers a thin film transistor (TFT) array, forms a matrix.Thin film transistor (TFT) array formation circuit, determines picture
The luminous situation of element, and then determine the composition of image.AMOLED can be in large size, compared with power saving, high-res, the panel life-span compared with
It is long, therefore obtained the attention of height in display technology field.
As shown in Figure 1, organic light-emitting display device includes substrate 1 in the prior art, sets film on substrate 1 brilliant
Body pipe, the thin film transistor (TFT) generally includes to set cushion 2 on substrate 1, sets gradually grid on the buffer layer 2
31st, gate insulator 32, semiconductor layer 33, and it is arranged on drain electrode 34 and the source electrode 35 at the two ends of semiconductor layer 33.Film crystal
It is additionally provided with to set on passivation layer 36, the passivation layer 36 on pipe and includes first electrode 41, organic layer 42 and second electrode 43
Organic Light Emitting Diode, wherein, the logical of the conducting source electrode 35 and the first electrode 41 is provided with the passivation layer 36
Hole.Pixel confining layers 37 are additionally provided with the passivation layer 36, for the isolation between each pixel.
Low temperature polycrystalline silicon（English full name is：Low Temperature Poly-Silicon, abbreviation LTPS）Electronics move
Shifting rate is high, and the material as semiconductor layer 33 can not only improve the response speed of display device, can also make thin film circuit
Obtain smaller thinner, power consumption is lower, improve the aperture opening ratio of display device, be widely used in existing display devices.But
Be, because LTPS annealing process cost is very high, either production process, the maintenance maintenance of production line, or production line liter
Level is regenerated, and can not all be realized easily；Moreover, the increase needed with people to large display device, large-sized LTPS's
Homogeneity and stability also receive test, therefore, and LTPS of the prior art still is limited in small-size display part
Using.
The problem of in order to solve LTPS costs of manufacture height, can not be in large size, research staff finds the new semiconductor of a class
Material --- metal-oxide semiconductor (MOS), such as IGZO（English full name is Indium Gallium Zinc Oxide, is translated into indium gallium
Zinc oxide）、IZO（English full name is Indium Zinc Oxide, is translated into indium zinc oxide）Deng its carrier mobility right and wrong
20~30 times of crystal silicon, can greatly improve charge-discharge velocities of the TFT to pixel electrode, improve the response speed of pixel, realize
Faster refresh rate.More importantly metal-oxide semiconductor (MOS) TFT can only be needed using the production of existing non-crystalline silicon production line
Slightly change, thus it is more competitive than LTPS in terms of cost.
But metal-oxide semiconductor (MOS) is very sensitive to ultraviolet, particularly in top emitting display device, top emitting
Second electrode it is relatively thin, be half reflection and half transmission film quality, metal-oxide semiconductor (MOS) is easy to exposure under ultraviolet light, easily causes
The deterioration of display device so that metal-oxide semiconductor (MOS) can not be used in top emitting display device.
The content of the invention
Therefore, to be solved by this invention is that metal oxide semiconductor films transistor can not be in top emitting organic light emission
In diode display using and to easily cause the technical problem of second electrode tomography aobvious there is provided a kind of new organic light emission
Showing device and preparation method thereof.
In order to solve the above technical problems, the technical solution adopted by the present invention is as follows：
A kind of organic light-emitting display device of the present invention, including：
Substrate；
Thin film transistor (TFT), including semiconductor layer, are arranged on drain electrode and the source electrode at semiconductor layer two ends, and Vertical Square is set up
Grid in the semiconductor layer or lower section；
Passivation layer, is set on thin film transistor (TFT)；
Organic Light Emitting Diode, is arranged on the passivation layer, including first electrode, organic layer and second electrode；
It is provided with the passivation layer and turns on the first electrode and the through hole of one of the source electrode, the drain electrode, it is described
Encapsulated layer is additionally provided with second electrode；
The semiconductor layer is to be provided directly with ultraviolet blocking layer on metal oxide semiconductor layer, the passivation layer,
The ultraviolet blocking layer smoothly connects with the first electrode, and its thickness is identical with the first electrode；It is directly arranged at
The organic layer in the first electrode is gently extended on the ultraviolet blocking layer；
Light removing layer is additionally provided between the second electrode and the encapsulated layer, the smooth removing layer is less than to wavelength
420nm light transmission rate is less than 20%, and the light transmission rate that 420nm is more than or equal to wavelength is more than 90%, and the smooth removing layer
Refractive index be more than 2.
The light transmission rate that the ultraviolet blocking layer is less than 420nm to wavelength is less than 20%, and wavelength is more than or equal to
420nm light transmission rate is more than 90%.
The surface smoothness on surface of the ultraviolet blocking layer away from substrate is less than 10nm.
The ultraviolet blocking layer includes ZrO2Layer, TiO2Layer, ZnO layer, ZnS layers or CeO2It is one or more in layer
Combination.
The metal-oxide semiconductor (MOS) includes one kind in IGZO, IZO, ZTO, Al-IZO, N-IZO.
The smooth removing layer includes ZrO2、TiO2, ZnO, ZnS or CeO2One or more combinations in layer.
The second electrode is Ag layers and/or Mg：Ag alloy-layers.
The second electrode thickness is 10~80nm.
Cushion is also provided directly with the substrate.
The cushion is SiOxLayer or SiNxLayer.
The organic layer includes luminescent layer.
A kind of preparation method of organic light-emitting display device of the present invention, comprises the following steps：
S1, formation include the substrate of TFT regions, and formation metal oxide semiconductor films are brilliant on substrate
Body pipe；
S2, the passivation layer for forming on substrate the covering thin film transistor (TFT)；
S3, the passivation layer are divided into adjacent pixel region and TFT regions, described on the passivation layer
TFT regions set ultraviolet blocking layer, and its thickness is identical with first electrode；
S4, form first electrode on the pixel region on the passivation layer, the first electrode and the ultraviolet
Barrier layer smoothly connects；
S5, machine layer is formed directly with the first electrode, the organic layer includes luminescent layer, and the organic layer is gentle
Extend on the ultraviolet blocking layer；
S6, on the organic layer form second electrode；
S7, the formation light removing layer in the second electrode, the smooth removing layer are less than 420nm light transmission rate to wavelength
Less than 20%, the light transmission rate that 420nm is more than or equal to wavelength is more than 90% and with high index of refraction, and the refractive index is more than 2；
S8, on the smooth removing layer encapsulated layer is set, the organic light-emitting display device is packaged.
The light transmission rate that the ultraviolet blocking layer is less than 420nm to wavelength is less than 20%, and wavelength is more than or equal to
420nm light transmission rate is more than 90%.
The surface smoothness on surface of the ultraviolet blocking layer away from substrate is less than 10nm.
The ultraviolet blocking layer includes ZrO2Layer, TiO2Layer, ZnO layer, ZnS layers or CeO2It is one or more in layer
Combination.
The metal-oxide semiconductor (MOS) includes one kind in IGZO, IZO, ZTO, Al-IZO, N-IZO.
The smooth removing layer includes ZrO2、TiO2, ZnO, ZnS or CeO2One or more combination in layer.
The second electrode be Ag layer with or Mg：Ag alloy-layers.
The second electrode thickness is 10~80nm.
The above-mentioned technical proposal of the present invention has advantages below compared with prior art：
1st, the present invention provides a kind of organic light-emitting display device, described by setting ultraviolet blocking layer over the passivation layer
Ultraviolet blocking layer smoothly connects with the first electrode, and its thickness is identical with the first electrode；Not only can effectively it hinder
Gear ultraviolet realizes that metal-oxide semiconductor (MOS) is thin to being arranged on the influence of the metal-oxide semiconductor (MOS) of the passivation layer bottom
Use of the film transistor in top emitting organic light emitting diode device；And the ultraviolet blocking layer can play pixel limit
The effect of given layer, reduces the preparation process of pixel confining layers, can effectively reduce process costs；In addition, the organic light emission is aobvious
Showing device is additionally provided with light removing layer, with the synergy of the ultraviolet blocking layer, not only can further stop purple
Outside line, and the light losing that total reflection is brought can be reduced, further improve the luminous efficiency of display device.
2nd, the present invention provides a kind of organic light-emitting display device, uses metal-oxide semiconductor (MOS), its carrier mobility
Height, can greatly improve charge-discharge velocities of the TFT to pixel electrode, improve the response speed of pixel, realize faster refresh rate.
3rd, the present invention provides a kind of organic light-emitting display device, using emission structure at top, and light is without passing through image element circuit
Region, not only helps improving luminous efficiency, and also improve display device aperture opening ratio.
4th, the present invention provides a kind of preparation method of organic light-emitting display device, by setting ultraviolet to hinder over the passivation layer
Barrier, the ultraviolet blocking layer smoothly connects with the first electrode, and its thickness is identical with the first electrode；Not only may be used
Effectively to stop that ultraviolet, to being arranged on the influence of the metal-oxide semiconductor (MOS) of the passivation layer bottom, realizes metal oxide
Use of the semiconductor thin-film transistor in top emitting organic light emitting diode device；And the ultraviolet blocking layer can rise
To the effect of pixel confining layers, the preparation process of pixel confining layers is reduced, process costs can be effectively reduced, effectively improved organic
The yield rate and reliability of luminous display unit, preparation technology are simple, it is easy to implement.
Brief description of the drawings
In order that present disclosure is more likely to be clearly understood, specific embodiment and combination below according to the present invention
Accompanying drawing, the present invention is further detailed explanation, wherein
Fig. 1 is the sectional view of organic light-emitting display device in the prior art；
Fig. 2 is the sectional view for the organic light-emitting display device that the present invention is provided；
Reference is expressed as in figure：1- substrates, 2- cushions, 31- grids, 32- gate insulators, 33- semiconductor layers,
34- drain electrodes, 35- source electrodes, 36- passivation layers, 37- pixels confining layers, 41- first electrodes, 42- organic layers, 43- second electrodes, 5-
Encapsulated layer, 6- light removing layer, 7- ultraviolet blocking layers.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
The present invention can be embodied in many different forms, and should not be construed as limited to embodiment set forth herein.
Opposite there is provided these embodiments so that the disclosure will be thorough and complete, and the design of the present invention will be fully conveyed to
Those skilled in the art, the present invention will only be defined by the appended claims.In the accompanying drawings, for clarity, Ceng He areas can be exaggerated
The size and relative size in domain.It should be appreciated that when element such as layer, region or substrate are referred to as " formation " or " set
" another element " on " when, the element can be arranged directly on another element, or can also have intermediary element.
On the contrary, when element is referred to as on " being formed directly into " or " being set directly at " another element, in the absence of intermediary element.
Embodiment 1
The present embodiment provides a kind of organic light-emitting display device, as shown in Fig. 2 including substrate 1, setting on substrate 1
Thin film transistor (TFT), thin film transistor (TFT) described in the present embodiment is bottom grating structure, and the thin film transistor (TFT) further comprises being arranged on
Grid 31, gate insulator 32, the semiconductor layer 33 set gradually on substrate 1, and it is arranged on the leakage at the two ends of semiconductor layer 33
Pole 34 and source electrode 35；Being additionally provided with to set on passivation layer 36, the passivation layer 36 on thin film transistor (TFT) includes first electrode 41, has
The conducting source electrode 35 is provided with the Organic Light Emitting Diode of machine layer 42 and second electrode 43, the passivation layer 36 and described
Light removing layer 6 and encapsulated layer 5 are disposed with the through hole of first electrode 41, the second electrode 43；The semiconductor layer 33
For metal oxide semiconductor layer, ultraviolet blocking layer 7, the ultraviolet blocking layer 7 are provided directly with the passivation layer 36
Smoothly connect with the first electrode 41, and its thickness is identical with the first electrode 41, the organic layer 42 gently cover by extension
Cover on the ultraviolet blocking layer 7.
The metal-oxide semiconductor (MOS) is selected from, but not limited to, IGZO（Indium gallium zinc oxide）、IZO（Indium zinc oxide）、ZTO
（Zinc oxide tin adduct）、Al-IZO（Aluminium doped indium oxide zinc）、N-IZO（N doping indium zinc oxide）In one kind, this
The preferred IGZO of embodiment.
As convertible embodiment of the invention, the thin film transistor (TFT) be selected from, but not limited to, bottom grating structure, top gate structure or
Double-grid structure.
Ultraviolet blocking layer 7 described in the present embodiment is TiO2Layer, thickness is 20nm, and the surface away from substrate 1 is put down
Whole degree is about 4nm, and refractive index is 2.5.The light transmission rate for being less than 420nm to wavelength is 5%, is more than or equal to 420nm to wavelength
Light transmitance be 95%.As the other embodiment of the present invention, the ultraviolet blocking layer 7 is less than 420nm light to wavelength
Transmitance is less than 20%, and 420nm light transmission rate is more than or equal to wavelength and can realize the purpose of the present invention more than 90%, is belonged to
In protection scope of the present invention.
As the other embodiment of the present invention, the refractive index of the ultraviolet blocking layer 7 is more than 2；Surface away from substrate 1
Surface smoothness be less than 10nm；Thickness is identical with the first electrode 41, can realize the purpose of the present invention, belongs to this
The protection domain of invention.
As the alterable embodiment of the present invention, the ultraviolet blocking layer 7 is also selected from but is not limited to ZrO2Layer,
TiO2Layer, ZnO layer, ZnS layers or CeO2One or more combinations in layer.
Light removing layer 6 is provided between the second electrode 43 and the encapsulated layer 5, the smooth removing layer 6 is ZrO2Layer,
The light transmission rate for being less than 420nm to wavelength is 5%, has high index of refraction, the refraction to the light that wavelength is more than or equal to 420nm
Rate is 2.5.
As the other embodiment of the present invention, the smooth removing layer 6 is selected from, but not limited to, ZrO2、TiO2, ZnO, ZnS or
CeO2The one or more combination of layer；The light transmission rate for being less than 420nm to wavelength is less than 20%, is more than or equal to 420nm to wavelength
Light there is high index of refraction, the refractive index is more than 2, can realize the purpose of the present invention, belong to protection scope of the present invention.
The second electrode 43 be selected from, but not limited to, Ag layers and or Mg：Ag alloy-layers, the preferred Mg of the present embodiment：Ag alloys
Layer, thickness is 20nm.
As the other embodiment of the present invention, the thickness of second electrode 43 is 10~80nm, can realize the present invention
Purpose, belong to protection scope of the present invention.
Cushion 2 is also provided directly with the substrate 1, the cushion 2 is SiOxLayer or SiNxLayer, the present embodiment is excellent
Select SiO2Layer.
The organic layer 42 includes luminescent layer, in addition to hole injection layer, hole transmission layer, electron injecting layer, electronics are passed
One or more combinations in the functional layers such as defeated layer.
The present embodiment also provides the preparation method of the organic light-emitting display device, comprises the following steps：
S1, formation include the substrate 1 of TFT regions, and form metal oxide semiconductor films on substrate 1
Transistor.
The substrate 1 is selected from, but not limited to, polymeric substrates, glass substrate or metal substrate, the preferred glass base of the present embodiment
Plate；Cushion 2 is directly formed on substrate 1, and the cushion 2 is to pass through d.c. sputtering, radio-frequency sputtering, reactive sputtering or magnetic control
SiO prepared by the techniques such as sputteringxLayer or SiNxLayer, the present embodiment is preferred to use the SiO of magnetron sputtering preparation2Layer.
The thin film transistor (TFT) is bottom grating structure, further comprises setting grid 31, the grid set gradually on substrate 1
Insulating barrier 32, semiconductor layer 33, and it is arranged on drain electrode 34 and the source electrode 35 at the two ends of semiconductor layer 33.It is convertible as the present invention
Embodiment, the thin film transistor (TFT) is selected from, but not limited to, bottom grating structure, top gate structure or double-grid structure.
First, the techniques such as d.c. sputtering, radio-frequency sputtering, reactive sputtering or magnetron sputtering formation the is passed through on the buffer layer 2
One metal level, the metal used in the first metal layer is selected from, but not limited to, the metal or alloy such as MoW, Mo, AlNd, and thickness is
150~350nm, and pattern to form grid 31 by photoetching process；The present embodiment is preferably formed by magnetron sputtering technique
MoW layers, thickness is 200nm.
Then, gate insulator 32 is formed on substrate 1 to cover grid 31；The gate insulator 32 is to pass through direct current
SiO prepared by the techniques such as sputtering, radio-frequency sputtering, reactive sputtering or magnetron sputteringxLayer or SiNxLayer, the present embodiment is preferred to use magnetic
SiN layer prepared by control sputtering, thickness is 50nm.
Formed again on gate insulator 32 by techniques such as d.c. sputtering, radio-frequency sputtering, reactive sputtering or magnetron sputterings
Semiconductor layer 33, the semiconductor layer 33 is IGZO layers, and thickness is 10-40nm；The present embodiment is preferably formed by magnetron sputtering
IGZO layers, thickness is 20nm.
Finally, the technique shape such as d.c. sputtering, radio-frequency sputtering, reactive sputtering or magnetron sputtering is passed through on gate insulator 32
Into the second metal layer of covering semiconductor layer 33, the metal used in the second metal layer is selected from, but not limited to, Mo-Al-Mo, Ti-
Al-Ti, Ti-Al-Mo, Mo-Al-Ti, thickness are 400~800nm, and pattern to be formed and the semiconductor by photoetching process
The drain electrode 34 of 33 liang of end in contact of layer and source electrode 35, the Mo-Al-Mo being sequentially depositing that the present embodiment is preferably formed by d.c. sputtering
Three-layer metal layer.
S2, the passivation layer 36 for forming the covering thin film transistor (TFT) on substrate 1, and set and lead in the passivation layer 36
The through hole of TongYuan pole 35；The passivation layer 36 is to pass through d.c. sputtering, radio-frequency sputtering, reactive sputtering, magnetron sputtering, chemical gaseous phase
Deposition（CVD）The SiO prepared etc. techniquexLayer or SiNxThe close materials of film quality such as layer, the present embodiment is preferred to use magnetron sputtering preparation
SiN layer, thickness is 200-400nm.
S3, the passivation layer 3 are divided into adjacent pixel region and TFT regions, the institute on the passivation layer 36
State the ultraviolet blocking layer 7 that TFT regions set described IGZO layers of covering, the ultraviolet blocking layer 7 and described first
Electrode 41 smoothly connects, and its thickness is identical with the first electrode 41；Ultraviolet blocking layer 7 described in the present embodiment is TiO2
Layer, thickness is 55nm, and the surface flatness away from substrate 1 is about 4nm, and refractive index is 2.5.420nm is less than to wavelength
Light transmission rate be 5%, to wavelength be more than or equal to 420nm light transmission rate be 95%.It is used as the other embodiment of the present invention, institute
State light transmission rate of the ultraviolet blocking layer 7 to wavelength less than 420nm and be less than 20%, the light that 420nm is more than or equal to wavelength is passed through
Rate, which is more than 90%, can realize the purpose of the present invention, belong to protection scope of the present invention.
As the other embodiment of the present invention, the refractive index of the ultraviolet blocking layer 7 is more than 2；Surface away from substrate 1
Surface smoothness be less than 10nm；Thickness is identical with the first electrode 41, can realize the purpose of the present invention, belong to this hair
Bright protection domain.
The ultraviolet blocking layer 7 can pass through chemical vapor deposition, evaporation, ion beam assisted depositing and the technique of sputtering
It is made；The preferred evaporation process of the present embodiment prepares TiO2Layer.
As the alterable embodiment of the present invention, the ultraviolet blocking layer 7 is also selected from but is not limited to ZrO2Layer,
TiO2Layer, ZnO layer, ZnS layers or CeO2One or more combinations in layer.
S4, on the passivation layer 36 pass through d.c. sputtering, radio-frequency sputtering, reactive sputtering or magnetic control on the pixel region
The techniques such as sputtering formation first electrode 41, first electrode 41 is connected to source electrode 35 by the through hole；The first electrode 41 is selected
From but be not limited to one kind in Ag/ITO, ITO/Ag/ITO, ITO/Al/ITO, the preferred ITO/Ag/ITO of the present embodiment, thickness is
15nm/30nm/10nm。
S5, organic layer 42 is formed in the first electrode 41, and the organic layer 42 gently extended in the purple
On outside line barrier layer 7, the organic layer 42 includes luminescent layer；Also include as organic layer 42 described in the other embodiment of the present invention
In the functional layers such as hole injection layer, hole transmission layer, electron injecting layer, electron transfer layer, the organic light emission two in the present embodiment
Organic layer 42 is in pole pipe device：Tmpc2(10nm)/DCJTB(30nm)/Alq3(15nm), preparation method is compared with technology.
Wherein, Tmpc2 is double phthalocyanine thuliums, is used as hole injection layer；DCJTB is 4-（Dicyanoethylene）- 2- the tert-butyl groups -6-
（The long Lip river Buddhist nun pyridine of 1,1,7,7- tetramethyls）- 4H- furans, is used as luminescent layer；Alq3It is three（8-hydroxyquinoline）Aluminium, is passed as electronics
Defeated layer；Above-mentioned material is Organic Light Emitting Diode common used material in the prior art, is laboratory synthesis.
S6, on the organic layer 42 by evaporation process formation second electrode 43, and it is brilliant gently to extend to the film
Body area under control domain, covers the ultraviolet blocking layer 7；The second electrode 43 is selected from, but not limited to, Ag layers, Mg：Ag alloy-layers, this
The preferred Mg of embodiment：Ag alloy-layers, thickness is 20nm.
As the other embodiment of the present invention, the thickness of second electrode 43 is 10~80nm, can realize the present invention
Purpose, belong to protection scope of the present invention
S7, in the second electrode 43 light removing layer 6 formed by the technique of evaporation；The smooth removing layer 6 is ZrO2
Layer, the light transmission rate that 420nm is less than to wavelength is 5%, has high index of refraction, the folding to the light that wavelength is more than or equal to 420nm
It is 95% to penetrate rate.
As the other embodiment of the present invention, the smooth removing layer 6 is selected from, but not limited to, ZrO2、TiO2、ZnO、ZnS、CeO2
One or more combination in layer；The light transmission rate for being less than 420nm to wavelength is less than 20%, is more than or equal to 420nm's to wavelength
Light has high index of refraction, and the refractive index is more than 2, can realize the purpose of the present invention, belong to protection scope of the present invention.
S8, the setting encapsulated layer 5 on the smooth removing layer 6, are packaged to the organic light-emitting display device, specific envelope
Dress method is compared with technology.
In above-described embodiment, the NX10 type atomic forces that the surface smoothness is produced by Park Systems companies of South Korea
Microscope（AFM）Test is obtained, and embodiments numerical value is the difference of highest and most ebb point and peak valley in measurement range（peak
to valley ratio）.
In above-described embodiment, TiO2、ZrO2Purchased from Shanghai Jing Lian new materials Co., Ltd.
In order to further embody a kind of advantage of organic light-emitting display device provided by the present invention, ad hoc meter and implementation pair
Ratio 1-3, it is for reference.
Comparative example 1
This comparative example provides a kind of organic light-emitting display device, concrete structure and preparation method be the same as Example 1, unique different
Be to be not provided with ultraviolet blocking layer 7 on the passivation layer 36.
Comparative example 2
This comparative example provides a kind of organic light-emitting display device, concrete structure and preparation method be the same as Example 1, unique different
Be to be not provided with light removing layer 6 in the second electrode 43.
Comparative example 3
This comparative example provides a kind of organic light-emitting display device, apparatus structure as shown in figure 1, preparation method be the same as Example 1,
Stated unlike unique and ultraviolet blocking layer 7 is not provided with passivation layer 36；Light removing layer is not provided with the second electrode 43
6。
Performance test, specific test side are carried out to the organic light-emitting display device provided in above-described embodiment and comparative example
Method and test result are as follows：
1st, using hot and humid equipment（Purchased from KSON celebratings sound science and technology, model PS-THS）Organic light-emitting display device is entered
Row life of product is tested, and embodiment is identical with the packaging technology of each comparative example, can exclude encapsulation influence；Test condition：Temperature
It is 85% for 85 DEG C, humidity, and has the irradiation of incandescent lamp（Ultraviolet light is provided）.
2nd, using spectrophotometer（Purchased from Photo Research, model PR-705）Organic light-emitting display device is entered
Row CIE（Chromaticity coordinates）The maximum offset of skew test, specifically test panel body from 0 degree of rotation to chromaticity coordinates during 75 degree of visual angles.
3rd, using spectrophotometer（Purchased from Photo Research, model PR-705）Organic light-emitting display device is entered
The white field efficiency test of row, calculation formula is as follows：
White field efficiency=（Display device screen body obtains brightness × luminous zone area when emitting white light）The current value of/screen body consumption,
From above-mentioned formula it can also be seen that white field efficiency value more high product is more saved.
Test data is as shown in the table：
| Life of product | CIE_y is offset | CIE_x is offset | The white field efficiency of Organic Light Emitting Diode | |
| Embodiment 1 | 320h | 0.02 | 0.01 | 3.31±0.3cd/w |
| Comparative example 1 | 145h | 0.04 | 0.03 | 3.24cd/w |
| Comparative example 2 | 140h | 0.11 | 0.05 | 3.22cd/w |
| Comparative example 3 | 100h | 0.14 | 0.09 | 3.18cd/w |
It is seen from the above data that in high temperature, high humility and in the environment of having a ultraviolet light, provided in embodiment 1
Organic light-emitting display device,, can be effective under both synergies due to being provided with ultraviolet blocking layer and light removing layer
Stop influence of the ultraviolet to metal-oxide semiconductor (MOS), its life-span will be far above the life-span of product in comparative example 1-3；And only
Light removing layer is set（Comparative example 1）Or ultraviolet blocking layer（Comparative example 2）Although life of product can be improved to a certain extent,
But it is good that its effect can not show a candle to both synergies.
In addition, test experiments are also confirmed, the organic light-emitting display device provided in embodiment 1, by setting ultraviolet
Barrier layer and light removing layer, while life of product is effectively improved, can also correct CIE_x and CIE_y skew, effectively change
The visual angle of kind product, improves the use quality of product.
Shown by white field efficiency test, the organic light-emitting display device provided in embodiment 1 is ultraviolet despite the provision of
Line barrier layer and light removing layer, but harmful effect is not produced to the light extraction efficiency of product；Due to the ultraviolet blocking layer
High index of refraction is respectively provided with the smooth removing layer, under both synergies, not only can further stop ultraviolet, and
The light losing that brings of total reflection can be reduced, is conducive to the export for the light that display device sent, on the contrary to organic light emission
The raising of the white field efficiency of display device has certain help.
Obviously, above-described embodiment is only intended to clearly illustrate example, and the not restriction to embodiment.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of change or
Change.There is no necessity and possibility to exhaust all the enbodiments.And the obvious change thus extended out or
Among changing still in protection scope of the present invention.
Claims (19)
1. a kind of organic light-emitting display device, including：
Substrate (1)；
Thin film transistor (TFT), including semiconductor layer (33), are arranged on drain electrode (34) and the source electrode (35) at semiconductor layer (33) two ends, hang down
Nogata sets up the grid (31) above or below the semiconductor layer (33)；
Passivation layer (36), is set on thin film transistor (TFT)；
Organic Light Emitting Diode, is arranged on the passivation layer (36), including first electrode (41), organic layer (42) and second
Electrode (43)；
The conducting first electrode (41) and one of the source electrode (35), the drain electrode (34) are provided with the passivation layer (36)
Through hole, be additionally provided with encapsulated layer (5) on the second electrode (43)；
Characterized in that,
The semiconductor layer (33) is that ultraviolet stop is provided directly with metal oxide semiconductor layer, the passivation layer (36)
Layer (7), the ultraviolet blocking layer (7) smoothly connects with the first electrode (41), and its thickness and the first electrode
(41) it is identical；The organic layer (42) being directly arranged in the first electrode (41) is gently extended in the ultraviolet
On barrier layer (7)；
Light removing layer (6) is additionally provided between the second electrode (43) and the encapsulated layer (5), the smooth removing layer (6) is right
The light transmission rate that wavelength is less than 420nm is less than 20%, and the light transmission rate that 420nm is more than or equal to wavelength is more than 90%, and institute
The refractive index for stating light removing layer (6) is more than 2.
2. organic light-emitting display device according to claim 1, it is characterised in that the ultraviolet blocking layer (7) is to ripple
The long light transmission rate less than 420nm is less than 20%, and the light transmission rate that 420nm is more than or equal to wavelength is more than 90%.
3. organic light-emitting display device according to claim 1 or 2, it is characterised in that the ultraviolet blocking layer (7) is remote
Surface smoothness from the surface of substrate (1) is less than 10nm.
4. organic light-emitting display device according to claim 1 or 2, it is characterised in that ultraviolet blocking layer (7) bag
Include ZrO2Layer, TiO2Layer, ZnO layer, ZnS layers or CeO2One or more combinations in layer.
5. organic light-emitting display device according to claim 1 or 2, it is characterised in that the metal-oxide semiconductor (MOS)
Including one kind in IGZO, IZO, ZTO, Al-IZO, N-IZO.
6. organic light-emitting display device according to claim 1 or 2, it is characterised in that the smooth removing layer (6) includes
ZrO2、TiO2, ZnO, ZnS or CeO2One or more combinations in layer.
7. organic light-emitting display device according to claim 1 or 2, it is characterised in that the second electrode (43) is Ag
Layer and/or Mg：Ag alloy-layers.
8. organic light-emitting display device according to claim 1 or 2, it is characterised in that second electrode (43) thickness
For 10~80nm.
9. organic light-emitting display device according to claim 1 or 2, it is characterised in that also directly set on the substrate (1)
It is equipped with cushion (2).
10. organic light-emitting display device according to claim 9, it is characterised in that the cushion (2) be SiOx layers or
SiNx layer.
11. organic light-emitting display device according to claim 1 or 2, it is characterised in that the organic layer (42) includes hair
Photosphere.
12. a kind of preparation method of organic light-emitting display device, it is characterised in that comprise the following steps：
S1, formation include the substrate (1) of TFT regions, and form metal oxide semiconductor films on substrate (1)
Transistor；
S2, the passivation layer (36) for forming on substrate (1) the covering thin film transistor (TFT)；
S3, the passivation layer (36) are divided into adjacent pixel region and TFT regions, on the passivation layer (36)
The TFT regions set ultraviolet blocking layer (7), and its thickness is identical with first electrode (41)；
S4, first electrode (41), the first electrode (41) and institute are formed on the pixel region on the passivation layer (36)
Ultraviolet blocking layer (7) is stated smoothly to connect；
S5, machine layer (42) is formed directly with the first electrode (41), the organic layer (42) includes luminescent layer, described to have
Machine layer (42) is gently extended on the ultraviolet blocking layer (7)；S6, on the organic layer (42) form second electrode
(43)；
S7, form light removing layer (6) in the second electrode (43), the smooth removing layer (6) is less than 420nm light to wavelength
Transmitance is less than 20%, and the light transmission rate that 420nm is more than or equal to wavelength is more than 90% and with high index of refraction, the refraction
Rate is more than 2；
S8, the setting encapsulated layer (5) on the smooth removing layer (6), are packaged to the organic light-emitting display device.
13. the preparation method of organic light-emitting display device according to claim 12, it is characterised in that the ultraviolet resistance
The light transmission rate that barrier (7) is less than 420nm to wavelength is less than 20%, and the light transmission rate that wavelength is more than or equal to 420nm is more than
90%.
14. the preparation method of the organic light-emitting display device according to claim 12 or 13, it is characterised in that described ultraviolet
The surface smoothness on surface of the line barrier layer (7) away from substrate (1) is less than 10nm.
15. the preparation method of the organic light-emitting display device according to claim 12 or 13, it is characterised in that described ultraviolet
Line barrier layer (7) includes ZrO2Layer, TiO2Layer, ZnO layer, ZnS layers or CeO2One or more combinations in layer.
16. the preparation method of the organic light-emitting display device according to claim 12 or 13, it is characterised in that the metal
Oxide semiconductor includes one kind in IGZO, IZO, ZTO, Al-IZO, N-IZO.
17. the preparation method of the organic light-emitting display device according to claim 12 or 13, it is characterised in that the light takes
Going out layer (6) includes ZrO2, TiO2, ZnO, ZnS or CeO2One or more combination in layer.
18. the preparation method of the organic light-emitting display device according to claim 12 or 13, it is characterised in that described second
Electrode (43) be Ag layer with or Mg：Ag alloy-layers.
19. the preparation method of the organic light-emitting display device according to claim 12 or 13, it is characterised in that described second
Electrode (43) thickness is 10~80nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310375937.2A CN104425542B (en) | 2013-08-26 | 2013-08-26 | A kind of organic light-emitting display device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310375937.2A CN104425542B (en) | 2013-08-26 | 2013-08-26 | A kind of organic light-emitting display device and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104425542A CN104425542A (en) | 2015-03-18 |
| CN104425542B true CN104425542B (en) | 2017-08-04 |
Family
ID=52974064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310375937.2A Active CN104425542B (en) | 2013-08-26 | 2013-08-26 | A kind of organic light-emitting display device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104425542B (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716164A (en) | 2015-03-27 | 2015-06-17 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof and organic light-emitting display device |
| CN106356407A (en) * | 2016-10-26 | 2017-01-25 | 京东方科技集团股份有限公司 | Thin film transistor and preparation method thereof as well as array substrate and preparation method thereof |
| CN108630822B (en) | 2017-03-24 | 2020-06-30 | 京东方科技集团股份有限公司 | Assembly of top-emitting OLED device and top-emitting OLED device |
| CN107706313A (en) * | 2017-11-01 | 2018-02-16 | 深圳市华星光电半导体显示技术有限公司 | OLED encapsulating structures and OLED encapsulation method |
| CN108764147B (en) * | 2018-05-29 | 2021-08-27 | 武汉天马微电子有限公司 | Display panel and display device |
| KR20200082753A (en) | 2018-12-31 | 2020-07-08 | 엘지디스플레이 주식회사 | Organic Light Emitting Display Device |
| CN110265439A (en) * | 2019-06-06 | 2019-09-20 | 武汉华星光电半导体显示技术有限公司 | Organic LED display panel and electronic equipment |
| CN110752234B (en) * | 2019-10-28 | 2022-12-09 | 京东方科技集团股份有限公司 | Display device, display substrate and preparation method thereof |
| CN110752236B (en) * | 2019-10-29 | 2022-05-24 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof and display device |
| CN113451414B (en) * | 2020-06-18 | 2022-07-29 | 重庆康佳光电技术研究院有限公司 | Thin film transistor device and preparation method thereof |
| CN113451413B (en) * | 2020-06-18 | 2022-07-08 | 重庆康佳光电技术研究院有限公司 | Thin film transistor device and preparation method thereof |
| CN115605934A (en) * | 2021-01-26 | 2023-01-13 | 京东方科技集团股份有限公司（Cn） | Display substrate, preparation method thereof and display device |
| CN113629211A (en) * | 2021-07-28 | 2021-11-09 | 武汉华星光电半导体显示技术有限公司 | Display panel, preparation method thereof and display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179110A (en) * | 2006-11-10 | 2008-05-14 | 三星Sdi株式会社 | Organic light emitting display and fabrication method thereof |
| CN101179111A (en) * | 2006-11-10 | 2008-05-14 | 三星Sdi株式会社 | Organic light emitting display and fabrication method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1596637A4 (en) * | 2003-02-20 | 2007-09-05 | Fujifilm Corp | Organic el element and production method therefor |
| KR100703971B1 (en) * | 2005-06-08 | 2007-04-06 | 삼성전자주식회사 | Semiconductor integrated circuit device and method for fabricating the same |
-
2013
- 2013-08-26 CN CN201310375937.2A patent/CN104425542B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101179110A (en) * | 2006-11-10 | 2008-05-14 | 三星Sdi株式会社 | Organic light emitting display and fabrication method thereof |
| CN101179111A (en) * | 2006-11-10 | 2008-05-14 | 三星Sdi株式会社 | Organic light emitting display and fabrication method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104425542A (en) | 2015-03-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104425542B (en) | A kind of organic light-emitting display device and preparation method thereof | |
| CN105573549B (en) | Array substrate, touch screen and touch control display apparatus and preparation method thereof | |
| CN104157693B (en) | Oxide thin film transistor and its manufacture method | |
| CN103904086B (en) | A kind of thin-film transistor array base-plate | |
| TWI575087B (en) | Method of making oxide thin film transistor array, and device incorporating the same | |
| CN106816473A (en) | Thin film transistor (TFT) and preparation method thereof, array base palte and display device | |
| CN103258968B (en) | A kind of active OLED display part and preparation method thereof | |
| CN109273498A (en) | A kind of array substrate and preparation method thereof, display panel, display device | |
| CN104900654B (en) | The preparation method and its structure of dual gate oxide semiconductor TFT substrate | |
| CN104681629B (en) | Thin film transistor (TFT), array base palte and its respective preparation method, display device | |
| CN106711158B (en) | Display base plate and preparation method thereof, display panel | |
| CN109273365A (en) | Preparation method, thin film transistor (TFT) and the display panel of thin film transistor (TFT) | |
| CN103489920B (en) | A kind of thin film transistor (TFT) and preparation method thereof, array base palte and display device | |
| CN104218094B (en) | A kind of thin film transistor (TFT), display base plate and display device | |
| CN104867870B (en) | The preparation method and its structure of dual gate oxide semiconductor TFT substrate | |
| CN102651343A (en) | Manufacturing method of array substrate, array substrate and display device | |
| CN104952791A (en) | Method for manufacturing AMOLED (active matrix organic light emitting diode) display device and structure of AMOLED display device | |
| CN103887245B (en) | A kind of manufacture method of array base palte | |
| CN103928343B (en) | Thin film transistor (TFT) and organic light emitting diode display preparation method | |
| CN104345511B (en) | Dot structure and its manufacture method, display panel | |
| CN103337522A (en) | Metal oxide thin film transistor array substrate and manufacturing method thereof | |
| CN104269413B (en) | Array base palte and preparation method thereof, liquid crystal display device | |
| CN103311128A (en) | Self-aligning metal oxide thin film transistor and manufacturing method thereof | |
| CN102437059A (en) | Preparation method for top-gate self-aligned zinc oxide thin film transistor | |
| CN103346089A (en) | Self-aligned double-layer channel metallic oxide thin film transistor and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201211 Address after: No.146 Tianying Road, high tech Zone, Chengdu, Sichuan Province Patentee after: Chengdu CHENXIAN photoelectric Co.,Ltd. Address before: NO.320 Fuchunjiang Road, Optoelectronic Industrial Park, Kunshan Development Zone, Suzhou City, Jiangsu Province Patentee before: Kunshan New Flat Panel Display Technology Center Co.,Ltd. Patentee before: KunShan Go-Visionox Opto-Electronics Co.,Ltd. |
|
| TR01 | Transfer of patent right |