CN110752234B - Display device, display substrate and preparation method thereof - Google Patents

Display device, display substrate and preparation method thereof Download PDF

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Publication number
CN110752234B
CN110752234B CN201911030502.8A CN201911030502A CN110752234B CN 110752234 B CN110752234 B CN 110752234B CN 201911030502 A CN201911030502 A CN 201911030502A CN 110752234 B CN110752234 B CN 110752234B
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substrate
layer
pixel defining
shielding material
ultraviolet light
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CN110752234A (en
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宫奎
段献学
张志海
刘天真
崔海峰
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

A display device, a display substrate and a preparation method thereof relate to the technical field of display devices, and the display substrate comprises: a substrate; the driving structure layer is arranged on the substrate and comprises a thin film transistor; a pixel defining layer disposed on a side of the driving structure layer facing away from the substrate, the pixel defining layer containing an ultraviolet light shielding material therein. According to the display substrate, the pixel defining layer contains the ultraviolet light shielding material, so that the influence of ultraviolet light on the performance of the thin film transistor in the preparation process of the display substrate can be prevented, a specially manufactured UV mask is not required to be used in the thin film packaging process, the process is reduced, and the cost is saved.

Description

Display device, display substrate and preparation method thereof
Technical Field
The application relates to the technical field of display devices, in particular to a display device, a display substrate and a preparation method of the display substrate.
Background
Organic Light Emitting Diodes (OLEDs) have been developed in recent years in the field of display and lighting technologies, and especially in the field of display, due to their advantages of high response, high contrast, flexibility, and the like, they have a wide application prospect. However, the OLED device may be corroded and damaged under the action of water vapor and oxygen, so that it is particularly important to select a better packaging method for the OLED device. At present, the film packaging is a packaging mode widely applied to the manufacture of OLED display substrates, but the packaging mode still has defects, and the popularization of the OLED display substrates is limited.
At present, a thin film encapsulation method for a display substrate generally covers an OLED device by using a thin film encapsulation structure in which an inorganic layer and an organic layer are stacked, so as to achieve the purpose of blocking water and oxygen. Wherein water and oxygen are blocked by means of an inorganic layer, and stress release and planarization are performed by means of an organic layer. The organic layer is usually made by an ink-jet printing process, wherein a liquid monomer organic matter is printed on the surface of the inorganic packaging layer and becomes a solid chain polymer through Ultraviolet (UV) light irradiation. However, in the manufacturing process of the large-sized OLED display substrate, the Thin Film Transistor (TFT) at the bottom of the display substrate (especially, an oxide semiconductor active layer in the TFT) is affected by UV light irradiation, so that the electron mobility of the TFT is shifted, and the performance of the TFT is reduced.
Disclosure of Invention
The technical problem that this application will solve is: the problem that the production cost is increased due to the adoption of the UV mask in the preparation process of the existing display substrate is solved.
To achieve the above object, an embodiment of the present invention provides a display substrate, including:
a substrate;
the driving structure layer is arranged on the substrate and comprises a thin film transistor;
a pixel defining layer disposed on a side of the driving structure layer facing away from the substrate, the pixel defining layer containing an ultraviolet light shielding material therein.
Optionally, the ultraviolet shielding material comprises nano zinc oxide particles or/and nano silica particles.
Optionally, the ultraviolet shielding material is dispersed in the base material of the pixel defining layer, and the base material of the pixel defining layer comprises a silicone resin or/and an acrylic resin.
Optionally, the pixel defining layer comprises an opening region and a pixel defining region, and an orthographic projection of the pixel defining region on the substrate covers an orthographic projection of the active layer of the thin film transistor on the substrate.
Optionally, the driving structure layer further includes a gate line and a data line, and an orthographic projection of the pixel defining region on the substrate further covers an orthographic projection of the gate line and the data line on the substrate.
Another embodiment of the present application provides a display device including any one of the display substrates.
Another embodiment of the present application provides a method for manufacturing a display substrate, including:
forming a driving structure layer on a substrate, wherein the driving structure layer comprises a thin film transistor;
and forming a pixel defining layer on one side of the driving structure layer, which faces away from the substrate, wherein the pixel defining layer contains an ultraviolet light shielding material.
Optionally, the forming a pixel defining layer on a side of the driving structure layer facing away from the substrate includes:
preparing a precursor solution containing the ultraviolet light shielding material;
forming a precursor solution film on one side of the driving structure layer, which is far away from the substrate;
and patterning the precursor solution film to form the pixel defining layer.
Optionally, the preparing a precursor solution containing the ultraviolet light shielding material includes:
dispersing the ultraviolet shielding material in a silane coupling agent to obtain a dispersion liquid; wherein the ultraviolet light shielding material comprises nano zinc oxide particles or/and nano silicon dioxide particles;
and hydrolyzing the silane coupling agent in the dispersion liquid and carrying out in-situ polymerization to generate organic silicon resin, thus obtaining the precursor solution.
Optionally, the preparing a precursor solution containing the ultraviolet light shielding material includes:
dispersing the ultraviolet light shielding material in a solvent by taking a silane coupling agent as a dispersing agent, then adding acrylic resin, and uniformly stirring to obtain the precursor solution; wherein the ultraviolet light-shielding material comprises nano zinc oxide particles or/and nano silicon dioxide particles.
Has the advantages that:
in this embodiment, the pixel defining layer includes an ultraviolet light shielding material, so that, in a process of manufacturing the display substrate, when ultraviolet light is required to irradiate the display substrate (for example, ultraviolet light irradiation curing is performed on the organic encapsulation layer in the thin film encapsulation), the ultraviolet light shielding material in the pixel defining layer can shield the ultraviolet light, so as to reduce transmittance of the ultraviolet light, and further prevent the ultraviolet light from transmitting to the thin film transistor below the pixel defining layer to affect performance of the thin film transistor.
Drawings
The accompanying drawings are included to provide a further understanding of the claimed subject matter and are incorporated in and constitute a part of this specification, illustrate embodiments of the subject matter and together with the description serve to explain the principles of the subject matter and not to limit the subject matter.
Fig. 1 is a schematic structural diagram of a display substrate according to an embodiment of the present disclosure after a driving structure layer, a passivation layer, a planarization layer, and a first electrode are formed on a substrate;
FIG. 2 is a schematic structural view after a precursor solution thin film is formed on the first electrode of FIG. 1;
FIG. 3 is a schematic structural view after a photoresist mask pattern is formed on the precursor solution film of FIG. 2;
FIG. 4 is a schematic structural diagram of the liquid crystal display device after patterning the precursor solution film to form a pixel defining layer by using the photoresist mask pattern of FIG. 3 as a shielding layer;
FIG. 5 shows a nano SiO 2 The ultraviolet-visible light transmittance and wavelength relationship of the mixed solution in which the particles are dispersed in the silicone resin;
FIG. 6 shows a view of nano SiO 2 The ultraviolet-visible light transmittance and wavelength relationship of the mixed solution in which the particles are dispersed in the hydroxyacrylic resin;
fig. 7 is a schematic structural view after an organic functional layer and a second electrode are formed on the substrate in fig. 4 on which the pixel defining layer is formed;
FIG. 8 is a schematic top view of a sub-pixel in the display substrate of FIG. 7;
FIG. 9 is a flow chart of a method of fabricating a display substrate according to one embodiment of the present application;
the reference signs are: 1. the organic light emitting diode comprises a substrate, 2, a gate insulating layer, 3, an interlayer insulating layer, 4, a thin film transistor, 40, a drain electrode, 41, an active layer, 42, a source electrode, 43, a gate electrode, 5, a passivation layer, 6, a flat layer, 7, a first electrode, 8, a pixel defining layer, 80, a precursor solution film, 9, an organic functional layer, 10, a second electrode, 11, a light emitting region, 12, a driving region, 13 and a photoresist mask pattern.
Detailed Description
The technical scheme of the application is further explained by the specific implementation mode in combination with the attached drawings. It is to be understood that the specific embodiments described herein are merely illustrative of and not restrictive on the broad application.
Referring to fig. 7, the present embodiment provides a display substrate, including: a substrate 1; the driving structure layer is arranged on the substrate 1 and comprises a thin film transistor 4; a pixel defining layer 8, the pixel defining layer 8 being arranged on a side of the driving structure layer facing away from the substrate 1, the pixel defining layer 8 containing an ultraviolet light shielding material.
In this embodiment, the pixel defining layer 8 contains an ultraviolet light shielding material, so that, in the process of manufacturing the display substrate, when ultraviolet light is required to irradiate the display substrate (for example, ultraviolet light irradiation curing is performed on the organic encapsulation layer in the thin film encapsulation), the ultraviolet light shielding material in the pixel defining layer 8 can shield the ultraviolet light, so as to reduce the transmittance of the ultraviolet light, and further prevent the ultraviolet light from transmitting to the thin film transistor 4 below the pixel defining layer 8 to affect the performance of the thin film transistor 4, so that, when the ultraviolet light irradiation curing is performed on the organic encapsulation layer in the thin film encapsulation process in the subsequent manufacturing process, a specially manufactured UV mask is not required, the process is reduced, and the cost is saved.
The ultraviolet light-shielding material may include nano zinc oxide particles or/and nano silica particles.
The ultraviolet light-shielding material may be dispersed in the base material of the pixel defining layer 8, and the base material of the pixel defining layer 8 may include a silicone resin or/and an acrylic resin.
The nano particles have special properties such as surface effect, small-size effect, quantum size effect, macroscopic quantum tunneling effect and the like, and can be doped into organic materials to prepare UV shielding coatings, wave-absorbing coatings, conductive coatings, heat-insulating coatings and the like. Nano ZnO and nano SiO 2 Is an excellent anti-aging agent, can obviously improve the anti-aging performance of the coating, and when the particle size is small enough, znO can be in a transparent state in the dispersoid. Nano SiO 2 The powder is amorphous white powder (an aggregate thereof), unsaturated residual bonds and hydroxyl groups in different bonding states exist on the surface, and the molecular state of the powder is a three-dimensional chain structure. Testing the surface with spectrophotometer to obtain nanometer SiO 2 The coating has strong UV shielding effect, the shielding rate of the coating on UVA (320-400 nm) is 88 percent, the shielding rate of the coating on UVB (290-320 nm) is 85 percent, and the shielding rate of the coating on UVC (200-290 nm) is still 70-80 percent, so the coating can form the shielding effect and achieve the purposes of ultraviolet aging resistance and thermal aging resistance.
In this example, nano SiO 2 Both the particles and the nano ZnO particles have strong ultraviolet light absorption capacity, and either one or both of the particles and the nano ZnO particles are doped in a base material (generally an organic material) of the pixel defining layer, so that the pixel defining layer 8 has strong UV light shielding rate, can effectively shield UV light (such as UV light in an organic packaging layer curing process) in the preparation process of the display substrate, and prevent the UV light from irradiating a TFT at the bottom of the substrate to influence the performance of the TFT.
The substrate of the pixel defining layer 8 may be a silicone resin or/and an acrylic resin, such that nano SiO 2 The particles and nano ZnO particles can be fully dispersed in the organic silicon resin or/and acrylic resin, so that the UV light shielding capability of all parts of the pixel definition layer 8 is more consistent. Further, the pixel defining layer 8 has a high visible light transmittance and is suitable for use in a top emission displayLight or bottom-emitting OLED display devices, and transparent displays.
Referring to fig. 7 and 8, the pixel defining layer 8 includes an opening region and a pixel defining region, and an orthogonal projection of the pixel defining region on the substrate 1 covers an orthogonal projection of the active layer 41 of the thin film transistor 4 on the substrate 1. Wherein one opening region of the pixel defining layer 8 corresponds to one light emitting region 11. The orthographic projection of the pixel defining area on the substrate 1 covers the orthographic projection of the active layer 41 of the thin film transistor 4 on the substrate 1, so that the pixel defining area containing the ultraviolet light shielding material can cover the active layer 41 of the thin film transistor 4 and prevent the active layer 41 from being irradiated by ultraviolet light to influence the performance of the active layer 41.
The driving structure layer includes a thin film transistor 4, and further includes a gate line and a data line. Referring to fig. 7, the thin film transistor 4 includes a gate electrode 43, an active layer 41, a source electrode 42, and a drain electrode 40. A gate insulating layer 2 is provided between the gate electrode 43 and the active layer 41, an interlayer insulating layer 3 is provided on the active layer 41, and the source electrode 42 and the drain electrode 40 are provided on the interlayer insulating layer 3 and are both connected to the active layer 41. The thin film transistor 4 may be an Indium Gallium Zinc Oxide (IGZO) type TFT, a Low Temperature Polysilicon (LTPS) type TFT. The gate line is connected to the gate electrode 43 of the thin film transistor 4, and the data line is connected to the source electrode 42 of the thin film transistor 4. The gate electrode 43, the source electrode 42, and the drain electrode 40 of the thin film transistor 4, and the gate line and the data line are generally made of metal.
Referring to fig. 7, the display substrate further includes a passivation layer 5 disposed on a side of the driving structure layer facing away from the substrate 1, a planarization layer 6 disposed on the passivation layer 5, and a first electrode 7 (e.g., an anode) disposed on the planarization layer 6. The pixel defining layer 8 is disposed on the first electrode 7, and an opening region of the pixel defining layer 8 exposes an upper surface of the first electrode 7. The display substrate further comprises an organic functional layer 9 arranged on the first electrode 7, a second electrode 10 (such as a cathode) arranged on the organic functional layer 9. The passivation layer 5 and the planarization layer 6 are provided with a through via hole so that the first electrode 7 is electrically connected to the drain electrode 40 of the thin film transistor 4 through the via hole. The organic functional layer 9 may be positioned in an opening region of the pixel defining layer 8, and the second electrode 10 covers the organic functional layer 9 and the pixel defining layer 8. The organic functional layer 9 may include a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer, which are sequentially disposed, or may include only a light emitting layer, and film layers other than the light emitting layer may be disposed as needed.
Referring to fig. 8, in the display substrate of the present embodiment, a plurality of gate lines and data lines crossing each other define a plurality of sub-pixels, and one sub-pixel includes a light emitting region 11 and a driving region 12 corresponding to at least one thin film transistor 4. The pixel defining layer 8 serves to define each light emitting region 11. One light-emitting region 11 corresponds to one opening region of the pixel defining layer 8 and corresponds to one first electrode 7. The pixel defining area can completely cover the other areas (including the driving area 12 corresponding to the thin film transistor 4) except the light emitting area 11 in one sub-pixel.
Under the condition of illumination with an external light source, the metal electrodes (including the gate electrode 43, the source electrode 42, the drain electrode 40 of the thin film transistor 4, and the data lines, the gate lines, and other metal traces on the same layer as the gate electrode 40, the source electrode 40, and the drain electrode) of the display substrate have stronger reflected light, which affects the display effect of the display device. In order to improve the metal electrode reflection phenomenon in an active matrix organic light emitting diode (AM-OLED), some methods attach a λ/4 wavelength polarizer on the AM-OLED panel to reduce the metal electrode reflection, which results in increased cost.
In this embodiment, the orthographic projection of the pixel defining area on the substrate 1 may further cover the orthographic projection of the gate line and the data line on the substrate 1. The pixel defining area can partially or completely cover the upper area of the TFT metal trace (including the gate electrode 43, the source electrode 42, the drain electrode 40 of the thin film transistor 4, and the data line, the gate line and other metal lines on the same layer as the gate electrode, the source electrode and the drain electrode) in the display substrate. Thus, the nano SiO in the pixel defining layer 8 2 The particles or nano ZnO particles can irradiate external light on the TFT metal wiring or the TFT metal wiringThe external light reflected by the line plays a role in scattering, the metal electrode reflection phenomenon in the AM-OLED is improved, and the display quality is improved, so that a polarizer is not needed to be arranged to reduce the metal electrode reflection phenomenon, and the production cost is reduced.
The display substrate of this embodiment may further include a film encapsulation layer, and the film encapsulation layer may be disposed on the second electrode 10, and covers the films on the substrate 1, so as to block water and oxygen and protect the films on the substrate 1 from water and oxygen. In order to improve the packaging effect of the thin film packaging layer, a plurality of organic packaging layers and inorganic packaging layers can be alternately arranged, so that the thin film packaging layer has a better water and oxygen blocking effect. The thin film encapsulation layer may include a first inorganic encapsulation layer, an organic encapsulation layer, a second inorganic encapsulation layer, and the like, which are sequentially disposed on the second electrode 10. The first inorganic packaging layer and the second inorganic packaging layer can be made of SiN x 、SiO 2 、SiC、Al 2 O 3 And at least one of ZnS, the material has good water and oxygen blocking effect, wide sources and low cost, and is favorable for reducing the cost of the display substrate. The material of the organic encapsulation layer may include, but is not limited to, at least one of polyethylene, polystyrene, polypropylene, polyacrylic acid, polyacrylate, polyamide, polyimide, polycarbonate, polyurethane acrylate, polyester, polysiloxane, and polysiloxane, so that the material source is wide, the effect of releasing the stress of the thin film encapsulation layer is better, and the surface of the finally obtained thin film encapsulation layer is relatively flat. The manner of forming the organic encapsulation layer may include: the material forming the organic encapsulation layer is formed on the surface of the first inorganic encapsulation layer remote from the substrate 1 by means of spraying, ink-jet printing or printing and then cured using Ultraviolet (UV) light irradiation. Since the pixel defining layer 8 in this embodiment contains the ultraviolet light shielding material, when the organic encapsulation layer is irradiated with ultraviolet light to be cured, the ultraviolet light shielding material in the pixel defining layer 8 can shield ultraviolet light, so that the active layer 41 of the thin film transistor 4 is not adversely affected.
Another embodiment of the present application provides a display device, including the display substrate of any one of the above embodiments.
Referring to fig. 1 to 9, another embodiment of the present application provides a method for manufacturing a display substrate according to the above embodiment, including the following steps:
s1, forming a driving structure layer on a substrate 1, wherein the driving structure layer comprises a thin film transistor 4.
Referring to fig. 1, in this step, a driving structure layer including a thin film transistor 4 may be formed on a substrate 1, where the driving structure layer includes a plurality of thin film transistors 4, a gate line and a data line. The structure of the driving structure layer can be seen above. Then, a passivation layer 5, a flat layer 6 and a first electrode 7 are sequentially formed on one side of the driving structure layer, which is far away from the substrate 1, and the first electrode 7 is electrically connected with a drain electrode 40 of the thin film transistor 4.
The manufacturing methods of the driving structure layer, the passivation layer 5, the planarization layer 6 and the first electrode 7 in this step are all mature process technologies, which may be the same as those of related technologies, and are not described herein again.
And S2, forming a pixel defining layer 8 on the side of the driving structure layer, which is far away from the substrate 1, wherein the pixel defining layer 8 contains an ultraviolet light shielding material.
Wherein, S2 step includes:
s10, preparing a precursor solution containing the ultraviolet light shielding material.
S20, forming a precursor solution film 80 on one side of the driving structure layer, which is far away from the substrate 1.
Referring to fig. 2, the precursor solution to be prepared in this step may be formed on the surfaces (upper surfaces in fig. 2) of the first electrode 7 and the planarization layer 6 by coating, inkjet printing, spin coating, or the like, to form a precursor solution thin film 80.
S30, patterning the precursor solution thin film 80 to form the pixel defining layer 8.
Referring to fig. 3 and 4, the step may be performed by patterning the precursor solution film 80 through a patterning process (e.g., photolithography and etching) to form the pixel defining layer 8. The patterning process may include: firstly, curing the precursor solution film 80, then forming a photoresist film on the precursor solution film 80, exposing and developing the photoresist film to form a photoresist mask pattern 13, etching the part of the precursor solution film 80 which is not shielded by the photoresist mask pattern 13 by taking the photoresist mask pattern 13 as a shielding layer, then realizing the patterning of the precursor solution film 80, and finally forming the pixel defining layer 8.
Wherein, the step S10 may include:
s101, dispersing the ultraviolet shielding material in a silane coupling agent to obtain a dispersion liquid; wherein the ultraviolet light shielding material comprises nano zinc oxide particles or/and nano silicon dioxide particles; during the dispersing process, a certain amount of dispersant can be added.
S102, hydrolyzing and polymerizing the silane coupling agent in the dispersion liquid in situ to generate organic silicon resin, and obtaining the precursor solution. Wherein, dilute hydrochloric acid can be added into the dispersion liquid to adjust the pH under the condition of high-speed stirring, so that the silane coupling agent is hydrolyzed and polymerized in situ to generate the organic silicon resin. The nano zinc oxide particles or/and nano silicon dioxide particles can be well dispersed in the organic silicon resin.
Alternatively, the S10 step may include: dispersing the ultraviolet shielding material in a solvent by taking a silane coupling agent as a dispersing agent, then adding acrylic resin (also can be acrylic resin and fluororesin), and uniformly stirring to obtain the precursor solution; wherein the ultraviolet light-shielding material comprises nano zinc oxide particles or/and nano silicon dioxide particles. The proportion of the materials, the time of the dispersion process, the stirring speed, the stirring time, the solution concentration and the like can be adjusted according to actual conditions.
Referring to fig. 5 and 6, fig. 5 shows nano SiO 2 Mixed solution dispersed in organic silicon resin (nano SiO in mixed solution) 2 5%) of the ultraviolet-visible light transmittance and wavelength relationship. FIG. 6 shows a nano SiO 2 Mixed solution dispersed in hydroxy acrylic resin (nano SiO in mixed solution) 2 6%) of the ultraviolet-visible light transmittance and wavelength relationship. It can be seen that: nano SiO 2 The particles are dispersed in the organic silicon resin by a proper dispersion means to prepare a composite solution which has a shielding effect on ultraviolet rays in the range of 220-400 nm; and nano SiO 2 The composite solution prepared by dispersing the particles in the hydroxyl acrylic resin has good shielding effect on ultraviolet rays within the range of 220-350 nm, and is nearly transparent in visible light wave bands. This indicates that the above-mentioned doping is dispersed with nano SiO 2 The mixed solution of the particles has a strong UV shielding effect, and thus, the prepared pixel defining layer 8 has a strong UV shielding effect.
Referring to fig. 7, the preparation method of the display substrate of this embodiment further includes the subsequent steps of forming the organic functional layer 9, the second electrode 10, the thin film encapsulation layer, and the like, and the structures of these layers can be referred to above, and the formation of these layers can be made by using the related mature processes, which are not described herein again.
In the description of the embodiments of the present application, it should be noted that the terms "upper", "lower", "left", "right", "top", "inner", "outer", "axial", "four corners", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings, and are only used for convenience of description of the embodiments of the present application, but do not indicate or imply that the structures referred to have specific orientations, are constructed and operated in specific orientations, and thus, should not be construed as limiting the present application.
In the description of the embodiments of the present application, unless expressly stated or limited otherwise, the terms "connected," "fixedly connected," "mounted," and "mounted" are to be construed broadly and include, for example, fixedly connected, detachably connected, or integrally connected; the terms "mounted," "connected," and "fixedly connected" may be directly connected or indirectly connected through intervening elements, or may be connected through the interconnection between two elements. Specific meanings of the above terms in the embodiments of the present application can be understood in specific cases by those of ordinary skill in the art.

Claims (3)

1. A display substrate, comprising:
a substrate;
the driving structure layer is arranged on the substrate and comprises a thin film transistor;
a pixel defining layer arranged on a side of the driving structure layer facing away from the substrate, the pixel defining layer containing an ultraviolet light shielding material;
the ultraviolet shielding material comprises nano zinc oxide particles or/and nano silicon dioxide particles;
the ultraviolet light shielding material is dispersed in a base material of the pixel defining layer, and the base material of the pixel defining layer comprises a silicone resin or/and an acrylic resin;
the pixel definition layer comprises an opening area and a pixel definition area, and the orthographic projection of the pixel definition area on the substrate covers the orthographic projection of the active layer of the thin film transistor on the substrate;
the driving structure layer further comprises a gate line and a data line, and the orthographic projection of the pixel defining region on the substrate further covers the orthographic projection of the gate line and the data line on the substrate.
2. A display device comprising the display substrate of claim 1.
3. A method for preparing a display substrate is characterized by comprising the following steps:
forming a driving structure layer on a substrate, wherein the driving structure layer comprises a thin film transistor, a grid line and a data line;
forming a pixel defining layer on one side of the driving structure layer, which faces away from the substrate, wherein the pixel defining layer contains an ultraviolet light shielding material;
the forming of the pixel defining layer on the side of the driving structure layer facing away from the substrate comprises:
preparing a precursor solution containing the ultraviolet light shielding material;
forming a precursor solution film on one side of the driving structure layer, which is far away from the substrate;
patterning the precursor solution film to form the pixel defining layer; wherein the pixel defining layer comprises an opening region and a pixel defining region, and an orthographic projection of the pixel defining region on the substrate covers an active layer of the thin film transistor, an orthographic projection of the gate line and an orthographic projection of the data line on the substrate;
the preparation of the precursor solution containing the ultraviolet light shielding material comprises the following steps:
dispersing the ultraviolet shielding material in a silane coupling agent to obtain a dispersion liquid; wherein the ultraviolet light shielding material comprises nano zinc oxide particles or/and nano silicon dioxide particles;
hydrolyzing and in-situ polymerizing the silane coupling agent in the dispersion liquid to generate organic silicon resin, thus obtaining the precursor solution;
alternatively, the preparing a precursor solution containing the ultraviolet light shielding material includes:
dispersing the ultraviolet shielding material in a solvent by taking a silane coupling agent as a dispersing agent, then adding acrylic resin, and uniformly stirring to obtain the precursor solution; wherein the ultraviolet light-shielding material comprises nano zinc oxide particles or/and nano silicon dioxide particles.
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