CN104399702B - 一种二极管芯片酸洗工艺 - Google Patents
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- 238000005554 pickling Methods 0.000 title claims abstract description 35
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- 238000004140 cleaning Methods 0.000 claims abstract description 25
- 239000007788 liquid Substances 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000002253 acid Substances 0.000 claims description 19
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 14
- 239000012530 fluid Substances 0.000 claims description 14
- 238000005406 washing Methods 0.000 claims description 8
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 230000002000 scavenging effect Effects 0.000 claims description 6
- PWEBUXCTKOWPCW-UHFFFAOYSA-N squaric acid Chemical compound OC1=C(O)C(=O)C1=O PWEBUXCTKOWPCW-UHFFFAOYSA-N 0.000 claims description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract description 16
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 abstract description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 4
- 229960000583 acetic acid Drugs 0.000 abstract description 4
- 239000012362 glacial acetic acid Substances 0.000 abstract description 4
- 235000011149 sulphuric acid Nutrition 0.000 abstract description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 3
- 230000008901 benefit Effects 0.000 abstract description 3
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 3
- 239000011259 mixed solution Substances 0.000 abstract 2
- 235000011007 phosphoric acid Nutrition 0.000 abstract 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract 1
- 235000011114 ammonium hydroxide Nutrition 0.000 abstract 1
- 229960002163 hydrogen peroxide Drugs 0.000 abstract 1
- 238000004506 ultrasonic cleaning Methods 0.000 abstract 1
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000001117 sulphuric acid Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000011056 performance test Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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Abstract
本发明涉及一种二极管芯片酸洗工艺，所述工艺依次为一次酸洗、二次酸洗、氨水与双氧水清洗及水超声清洗，其中一次酸洗清洗时间110‑125s，二次酸洗清洗时间70‑78s；所述一次酸洗的清洗液为HNO3、HF、CH3COOH和H2SO4的混合液，所述二次酸洗的清洗液为H3PO4、H2O2、H2O和CH3COOH的混合液；所述一次酸洗液中HNO3：HF：CH3COOH和H2SO4的体积比为9:9:12:4；所述二次酸洗液中H3PO4、H2O2、H2O和CH3COOH的体积比为1:0.8:3:0.2。本发明的优点在于：本发明的酸洗工艺中，在二次酸洗液中加入了冰醋酸，利用冰醋酸溶解掉混合酸洗中生成物硫酸铅，避免硫酸铅会吸附到芯片的侧面，提高了二极管芯片的电性能。
Description
技术领域
本发明属于二极管领域，涉及一种二极管芯片酸洗工艺。
背景技术
根据二极管半导体生产原理，芯片要发挥作用时，必须经过酸腐蚀及酸钝化，二极管芯片的酸洗工艺包括一次酸洗，二次酸洗，氨水与双氧水混合清洗，最后水超声清洗。
目前一次酸洗中清洗液为硝酸、硫酸、氢氟酸以及冰醋酸的混合物；二次酸洗中清洗为磷酸、双氧水和水的混合物，由于焊料中存在Pb，一次酸洗时，会与清洗液中的硫酸反应形成硫酸铅PbSO4，硫酸铅为不溶物，会吸附到芯片的侧面，影响硅片的质量。
发明内容
本发明要解决的技术问题是提供一种能够提高二极管电性能二极管芯片酸洗工艺。
为解决上述技术问题，本发明的技术方案为：一种二极管芯片酸洗工艺，其创新点在于：所述工艺依次为一次酸洗、二次酸洗、氨水与双氧水清洗以及水超声清洗，其中一次酸洗清洗时间110-125s，二次酸洗清洗时间70-78s；所述一次酸洗的清洗液为HNO3、HF、CH3COOH 和H2SO4的混合液，二次酸洗的清洗液为H3PO4、H2O2、H2O和CH3COOH的混合液。
进一步地，所述一次酸洗液中HNO3：HF：CH3COOH 和H2SO4的体积比为9 :9 :12:4。
进一步地，所述二次酸洗液中H3PO4、H2O2、H2O和CH3COOH的体积比为1:0.5~0.8:3:0.5~0.2，且H2O2与CH3COOH总和为一个体积份。
进一步地，所述二次酸洗液中H3PO4、H2O2、H2O和CH3COOH的体积比为1: 0.8:3:0.2。
本发明的优点在于：本发明的酸洗工艺中，在二次酸洗液中加入了冰醋酸，利用该冰醋酸溶解掉混合酸洗中生成物硫酸铅，避免硫酸铅会吸附到芯片的侧面，提高了二极管芯片的电性能。
具体实施方式
实施例1
本发明公开了一种二极管芯片酸洗工艺，该工艺依次为一次酸洗、二次酸洗、氨水与双氧水清洗及水超声清洗，其中一次酸洗清洗时间110-125s，二次酸洗清洗时间70-78s；二次酸洗的清洗液体积组成为HNO3：HF：CH3COOH ：H2SO4= 9 :9 :12:4；二次酸洗的清洗液体积组成为H3PO4、H2O2、H2O：CH3COOH= 1:0.5:3:0.5。
实施例2
一种二极管芯片酸洗工艺，该工艺依次为一次酸洗、二次酸洗、氨水与双氧水清洗及水超声清洗，其中一次酸洗清洗时间110-125s，二次酸洗清洗时间70-78s；二次酸洗的清洗液体积组成为HNO3：HF：CH3COOH ：H2SO4= 9 :9 :12:4；二次酸洗的清洗液体积组成为H3PO4、H2O2、H2O：CH3COOH= 1:0.6:3:0.4。
实施例3
一种二极管芯片酸洗工艺，该工艺依次为一次酸洗、二次酸洗、氨水与双氧水清洗及水超声清洗，其中一次酸洗清洗时间110-125s，二次酸洗清洗时间70-78s；二次酸洗的清洗液体积组成为HNO3：HF：CH3COOH ：H2SO4= 9 :9 :12:4；二次酸洗的清洗液体积组成为H3PO4、H2O2、H2O：CH3COOH= 1:0.7:3:0.3。
实施例4
一种二极管芯片酸洗工艺，该工艺依次为一次酸洗、二次酸洗、氨水与双氧水清洗及水超声清洗，其中一次酸洗清洗时间110-125s，二次酸洗清洗时间70-78s；二次酸洗的清洗液体积组成为HNO3：HF：CH3COOH ：H2SO4= 9 :9 :12:4；二次酸洗的清洗液体积组成为H3PO4、H2O2、H2O：CH3COOH= 1:0.8:3:0.2。
下表为上述实施例1、实施例2、实施例3、实施例4的酸洗与目前酸洗后的效果比较，分别对1000个产品进行电性能测试后得出的结果：
上表中可以看出，改进后的酸与双氧水的混合清洗液和目前所用的酸与双氧水的混合清洗液相比，改进后的酸与双氧水的混合清洗液所得到的产品的成型烤电良率高，且H3PO4：H2O2：H2O：CH3COOH的体积比为1:0.8:3:0.2时，产品的成型烤电良率越好。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。本发明要求保护范围由所附的权利要求书及其等效物界定。
Claims (4)
1.一种二极管芯片酸洗工艺，其特征在于：所述工艺依次为一次酸洗、二次酸洗、氨水与双氧水清洗及水超声清洗，其中一次酸洗清洗时间110-125s，二次酸洗清洗时间70-78s；所述一次酸洗的清洗液为HNO3、HF、CH3COOH 和H2SO4的混合液，二次酸洗的清洗液为H3PO4、H2O2、H2O和CH3COOH的混合液。
2.根据权利要求1所述的二极管芯片酸洗工艺，其特征在于：所述一次酸洗液中HNO3：HF：CH3COOH 和H2SO4的体积比为9 :9 :12:4。
3.根据权利要求1所述的二极管芯片酸洗工艺，其特征在于：所述二次酸洗液中H3PO4、H2O2、H2O和CH3COOH的体积比为1:0.5~0.8:3:0.5~0.2，且H2O2与CH3COOH总和为一个体积份。
4.根据权利要求1所述的二极管芯片酸洗工艺，其特征在于：所述二次酸洗液中H3PO4、H2O2、H2O和CH3COOH的体积比为1: 0.8:3:0.2。
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| CN105428216A (zh) * | 2015-11-20 | 2016-03-23 | 如皋市大昌电子有限公司 | 一种二极管芯片的酸洗工艺 |
| CN107393813A (zh) * | 2017-09-08 | 2017-11-24 | 如皋市下原科技创业服务有限公司 | 一种二极管芯片的酸洗工艺 |
| CN108010841B (zh) * | 2017-12-01 | 2019-09-03 | 山东理工大学 | 一种二极管的制造方法及由此制得的二极管 |
| CN107887281B (zh) * | 2017-12-01 | 2019-07-02 | 山东理工大学 | 一种低功耗快速开关塑封高压硅堆的制造方法及高压硅堆 |
| CN112670350B (zh) * | 2020-12-14 | 2022-10-25 | 山东融创电子科技有限公司 | 一种高稳定性开放结塑封硅整流二极管的制造方法 |
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| CN100583393C (zh) * | 2008-08-26 | 2010-01-20 | 如皋市日鑫电子有限公司 | 一种对酸洗机流出的二极管的清洗工艺 |
| CN101845638A (zh) * | 2010-05-11 | 2010-09-29 | 扬州扬杰电子科技有限公司 | 一种二极管芯片的清洗工艺 |
| CN102244001A (zh) * | 2011-06-29 | 2011-11-16 | 常州佳讯光电产业发展有限公司 | 二极管酸洗脱水工艺及其设备 |
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Effective date of registration: 20201102 Address after: 277100 Xuecheng circular economy industrial park, zouwu Town, Xuecheng District, Zaozhuang City, Shandong Province Patentee after: Shandong Zhongke Green Carbon Technology Co., Ltd Address before: A20, building 2, agricultural machinery market, Sihong County, Suqian City, Jiangsu Province Patentee before: Jiangsu Hongjin Construction Co., Ltd |