CN104354391A - Golden three-silver LOW-E glass of special film system - Google Patents

Golden three-silver LOW-E glass of special film system Download PDF

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Publication number
CN104354391A
CN104354391A CN201410605545.5A CN201410605545A CN104354391A CN 104354391 A CN104354391 A CN 104354391A CN 201410605545 A CN201410605545 A CN 201410605545A CN 104354391 A CN104354391 A CN 104354391A
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China
Prior art keywords
layer
glass
thickness
dielectric layer
film system
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Pending
Application number
CN201410605545.5A
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Chinese (zh)
Inventor
禹幸福
陈圆
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ZHONGSHAN HENGLIDA MACHINERY Co Ltd
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ZHONGSHAN HENGLIDA MACHINERY Co Ltd
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Priority to CN201410605545.5A priority Critical patent/CN104354391A/en
Publication of CN104354391A publication Critical patent/CN104354391A/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00—Coating on the layer surface
    • B32B2255/28—Multiple coating on one surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/40—Properties of the layers or laminate having particular optical properties
    • B32B2307/402—Coloured
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00—Metals, their alloys or their compounds
    • B32B2311/02—Noble metals
    • B32B2311/08—Silver
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2451/00—Decorative or ornamental articles

Abstract

The invention discloses golden three-silver LOW-E glass of a special film system. The golden three-silver LOW-E glass comprises a glass base material, wherein a bottom Si3N4 medium layer, a TiOx medium layer, a first Ag layer, a first NiCrOx film layer, a first ZnSnO2 medium layer, a first AZO flat layer, a second Ag layer, a second NiCrOx film layer, a second ZnSnO2 medium layer, a second AZO flat layer, a third Ag layer, a third NiCrOx film layer, a third ZnSnO2 medium layer and a top Si3N4 medium layer are arranged on the upper surface of the glass base material in sequence from bottom to top. The golden three-silver LOW-E glass is simple in structure, convenient to prepare and lower in cost.

Description

A kind of gold three silver medal LOW-E glass of special film system
Technical field:
The present invention relates to a kind of gold three silver medal LOW-E glass of special film system.
Background technology:
LOW-E glass is a kind of high-end low emissivity glass, is the film system product being coated with multiple layer metal and other compound composition comprising silver layer at glass substrate surface.There is the double effects of energy-saving and emission-reduction and decorative curtain wall.
And aurene is as a unconventional kind of coated glass, be loved by the people.Along with energy-saving index requires more and more tighter, in a lot of city, two silver-colored LOW-E glass cannot be met customer need all, add the heat of designer to golden product to dote on, the market demand of golden three silver medal LOW-E glass is huge, but because three silver medal LOW-E glass preparations itself are complicated, and use gold with high costs as sputtering target material, there are not golden three silver medal LOW-E glass all the time.
Therefore be necessary to make improvements existing product, with provide a kind of structure simple, be convenient to preparation, lower-cost golden three silver medal LOW-E glass.
Summary of the invention:
The object of the present invention is to provide a kind of gold three silver medal LOW-E glass of special film system, its structure is simple, be convenient to preparation, cost is lower.
A gold three silver medal LOW-E glass for special film system, comprise glass baseplate, the upper surface of described glass baseplate is from bottom to top provided with Si successively 3n 4underlying dielectric layer, TiOx dielectric layer, an Ag layer, a NiCrOx rete, a ZnSnO 2dielectric layer, an AZO levelling blanket, the 2nd Ag layer, the 2nd NiCrOx rete, the 2nd ZnSnO 2dielectric layer, the 2nd AZO levelling blanket, the 3rd Ag layer, the 3rd NiCrOx rete, the 3rd ZnSnO 2dielectric layer and Si 3n 4top layer dielectric layer.
The present invention improves by following scheme:
Described Si 3n 4the thickness of underlying dielectric layer is 9.4nm.
The thickness of described TiOx dielectric layer is 11.4nm.
The thickness of a described Ag layer is 8.9nm, and the thickness of described 2nd Ag layer is 7.8nm, and the thickness of described 3rd Ag layer is 7.4nm.
The thickness of a described NiCrOx rete is 1.2nm, and the thickness of described 2nd NiCrOx rete and the 3rd NiCrOx rete is 1nm.
A described ZnSnO 2the thickness of dielectric layer is 24.9nm, described 2nd ZnSnO 2the thickness of dielectric layer is 60nm, described 3rd ZnSnO 2the thickness of dielectric layer is 19nm.
The thickness of a described AZO levelling blanket is 29.4nm, and the thickness of described 2nd AZO levelling blanket is 32nm.
Described Si 3n 4the thickness of top layer dielectric layer is 16nm.
Tool of the present invention has the following advantages: 1, structure of the present invention simple, be convenient to preparation, with the LOW-E glassy phase ratio produced as functional layer with gold, production cost decline more than 60%.2, have the radiance lower than traditional LOW-E glass, radiance only 0.02, energy-saving effect is remarkable.
Accompanying drawing illustrates:
Fig. 1 is structure sectional view of the present invention.
Detailed description of the invention:
As shown in the figure, a kind of gold three silver medal LOW-E glass of special film system, comprise glass baseplate 1, the upper surface of described glass baseplate 1 is from bottom to top provided with Si successively 3n 4underlying dielectric layer 2, TiOx dielectric layer 3, an Ag layer 4, a NiCrOx rete 5, a ZnSnO 2dielectric layer 6, an AZO levelling blanket 7, the 2nd Ag layer 8, the 2nd NiCrOx rete 9, the 2nd ZnSnO 2dielectric layer 10, the 2nd AZO levelling blanket 11, the 3rd Ag layer 12, the 3rd NiCrOx rete 13, the 3rd ZnSnO 2dielectric layer 14 and Si 3n 4top layer dielectric layer 15.
Further, described Si 3n 4the thickness of underlying dielectric layer 2 is 9.4nm.It adopts magnetron sputtering membrane process, with interchange intermediate frequency power supply, be sputter gas with argon gas, nitrogen makes reacting gas sputtering sial target (silica alumina ratio is 92:8) and is prepared from, wherein, argon nitrogen is than being (400SCCM ~ 420SCCM): (450SCCM ~ 500SCCM), argon nitrogen, than the core being this rete, determines the quality of film forming.
Again further, the thickness of described TiOx dielectric layer 3 is 11.4nm.It adopts magnetron sputtering membrane process, with midfrequent AC power supply sputtering Ceramics Ceramic titanium target, with argon gas as sputter gas, mix a small amount of oxygen and be prepared from, wherein, argon oxygen ratio is: (400SCCM ~ 420SCCM): (20 ~ 40SCCM).
Further, the thickness of a described Ag layer 4 is 8.9nm, and be functional layer, it adopts magnetron sputtering membrane process, with dc source sputtering silver target, is prepared from as sputter gas with argon gas, gas flow 500 ~ 550SCCM.
Again further, the thickness of a described NiCrOx rete 5 is 1.2nm, it adopts magnetron sputtering membrane process, with dc source sputtering nichrome target, with argon gas as sputter gas, mix a small amount of oxygen and be prepared from, wherein, argon oxygen ratio is: (400SCCM ~ 420SCCM): (20 ~ 40SCCM), high temperature oxidation resistance when raising rete wearability, raising light transmittance, raising tempering.
Again further, a described ZnSnO 2the thickness of dielectric layer 6 is 24.9nm; as protective layer; it adopts magnetron sputtering membrane process; make reacting gas sputtering ZnSn (mass percent Zn:Sn=50:50) target with interchange intermediate frequency power supply, argon gas be prepared from as sputter gas, oxygen; wherein; argon oxygen ratio is (400SCCM ~ 420SCCM): (450SCCM ~ 500SCCM), argon oxygen, than the core being this rete, determines the quality of film forming.
Further, the thickness of a described AZO levelling blanket 7 is 29.4nm, for level and smooth Ag layer 8.It adopts magnetron sputtering membrane process, with midfrequent AC power supply sputter ceramic Zn (AZO) target, with argon gas as sputter gas, mix a small amount of oxygen and be prepared from, wherein, argon oxygen ratio is: (400SCCM ~ 420SCCM): (20 ~ 40SCCM), be that the 2nd Ag layer 8 makes place mat, reduce radiance.
Again further, the thickness of described 2nd Ag layer 8 is 7.8nm, and be functional layer, it adopts magnetron sputtering membrane process, with dc source sputtering silver target, is prepared from as sputter gas with argon gas, gas flow 500 ~ 550SCCM.
Again further, the thickness of described 2nd NiCrOx rete 9 is 1nm.It adopts magnetron sputtering membrane process, with dc source sputtering nichrome target, with argon gas as sputter gas, mix a small amount of oxygen and be prepared from, wherein, argon oxygen ratio is: (400SCCM ~ 420SCCM): (20 ~ 40SCCM), high temperature oxidation resistance when raising rete wearability, raising light transmittance, raising tempering.
Further, described 2nd ZnSnO 2the thickness of dielectric layer 10 is 60nm; as protective layer; it adopts magnetron sputtering membrane process; make reacting gas sputtering ZnSn (mass percent Zn:Sn=50:50) target with interchange intermediate frequency power supply, argon gas be prepared from as sputter gas, oxygen; wherein; argon oxygen ratio is (400SCCM ~ 420SCCM): (450SCCM ~ 500SCCM), argon oxygen, than the core being this rete, determines the quality of film forming.
Again further, the thickness of described 2nd AZO levelling blanket 11 is 32nm, for level and smooth 3rd Ag layer 12.It adopts magnetron sputtering membrane process, with midfrequent AC power supply sputter ceramic Zn (AZO) target, with argon gas as sputter gas, mix a small amount of oxygen and be prepared from, wherein, argon oxygen ratio is: (400SCCM ~ 420SCCM): (20 ~ 40SCCM), be that the 3rd Ag layer 12 makes place mat, reduce radiance.
Further, the thickness of described 3rd Ag layer 12 is 7.4nm, and be functional layer, it adopts magnetron sputtering membrane process, with dc source sputtering silver target, is prepared from as sputter gas with argon gas, gas flow 500 ~ 550SCCM.
Again further, the thickness of described 3rd NiCrOx rete 13 is 1nm.It adopts magnetron sputtering membrane process, with dc source sputtering nichrome target, with argon gas as sputter gas, mix a small amount of oxygen and be prepared from, wherein, argon oxygen ratio is: (400SCCM ~ 420SCCM): (20 ~ 40SCCM), high temperature oxidation resistance when raising rete wearability, raising light transmittance, raising tempering.
Again further, described 3rd ZnSnO 2the thickness of dielectric layer 14 is 19nm; as protective layer; it adopts magnetron sputtering membrane process; make reacting gas sputtering ZnSn (mass percent Zn:Sn=50:50) target with interchange intermediate frequency power supply, argon gas be prepared from as sputter gas, oxygen; wherein; argon oxygen ratio is (400SCCM ~ 420SCCM): (450SCCM ~ 500SCCM), argon oxygen, than the core being this rete, determines the quality of film forming.
Again further, described Si 3n 4the thickness of top layer dielectric layer 15 is 16nm.It adopts magnetron sputtering membrane process, with interchange intermediate frequency power supply, be sputter gas with argon gas, nitrogen makes reacting gas sputtering sial target (silica alumina ratio is 92:8) and is prepared from, wherein, argon nitrogen is than being (400SCCM ~ 420SCCM): (450SCCM ~ 500SCCM), argon nitrogen, than the core being this rete, determines the quality of film forming.
Structure of the present invention is simple, be convenient to preparation, with the LOW-E glassy phase ratio produced as functional layer with gold, and production cost decline more than 60%.This has the radiance lower than traditional LOW-E glass, and radiance only 0.02, energy-saving effect is remarkable.
The foregoing is only preferred embodiment of the present invention, be not used for limiting scope of the invention process, all equal changes of doing according to the scope of the claims of the present invention and modification, all fall into the scope that patent of the present invention contains.

Claims (8)

1. a gold three silver medal LOW-E glass for special film system, comprises glass baseplate, it is characterized in that: the upper surface of described glass baseplate is from bottom to top provided with Si successively 3n 4underlying dielectric layer, TiOx dielectric layer, an Ag layer, a NiCrOx rete, a ZnSnO 2dielectric layer, an AZO levelling blanket, the 2nd Ag layer, the 2nd NiCrOx rete, the 2nd ZnSnO 2dielectric layer, the 2nd AZO levelling blanket, the 3rd Ag layer, the 3rd NiCrOx rete, the 3rd ZnSnO 2dielectric layer and Si 3n 4top layer dielectric layer.
2. the gold three silver medal LOW-E glass of a kind of special film system according to claim 1, is characterized in that: described Si 3n 4the thickness of underlying dielectric layer is 9.4nm.
3. the gold three silver medal LOW-E glass of a kind of special film system according to claim 1, is characterized in that: the thickness of described TiOx dielectric layer is 11.4nm.
4. the gold three silver medal LOW-E glass of a kind of special film system according to claim 1, it is characterized in that: the thickness of a described Ag layer is 8.9nm, the thickness of described 2nd Ag layer is 7.8nm, and the thickness of described 3rd Ag layer is 7.4nm.
5. the gold three silver medal LOW-E glass of a kind of special film system according to claim 1, it is characterized in that: the thickness of a described NiCrOx rete is 1.2nm, the thickness of described 2nd NiCrOx rete and the 3rd NiCrOx rete is 1nm.
6. the gold three silver medal LOW-E glass of a kind of special film system according to claim 1, is characterized in that: a described ZnSnO 2the thickness of dielectric layer is 24.9nm, described 2nd ZnSnO 2the thickness of dielectric layer is 60nm, described 3rd ZnSnO 2the thickness of dielectric layer is 19nm.
7. the gold three silver medal LOW-E glass of a kind of special film system according to claim 1, it is characterized in that: the thickness of a described AZO levelling blanket is 29.4nm, the thickness of described 2nd AZO levelling blanket is 32nm.
8. the gold three silver medal LOW-E glass of a kind of special film system according to claim 1, is characterized in that: described Si 3n 4the thickness of top layer dielectric layer is 16nm.
CN201410605545.5A 2014-10-30 2014-10-30 Golden three-silver LOW-E glass of special film system Pending CN104354391A (en)

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Application Number Priority Date Filing Date Title
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101497500A (en) * 2009-03-06 2009-08-05 中国南玻集团股份有限公司 Three-silver low radiation film glass capable of being subsequently processed
CN201817403U (en) * 2010-09-01 2011-05-04 林嘉宏 Low emissivity glass capable of being processed in different places
CN103264549A (en) * 2013-05-17 2013-08-28 中国南玻集团股份有限公司 Infrared ray shielding glass with front surface and side surface having consistent reflection hues
TW201402497A (en) * 2013-09-25 2014-01-16 Taiwan Glass Industry Corp Reinforceable triple-silver low-E coated glass
CN103802397A (en) * 2012-11-08 2014-05-21 中国南玻集团股份有限公司 Low-radiation glass with neutral transmitting color

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101497500A (en) * 2009-03-06 2009-08-05 中国南玻集团股份有限公司 Three-silver low radiation film glass capable of being subsequently processed
CN201817403U (en) * 2010-09-01 2011-05-04 林嘉宏 Low emissivity glass capable of being processed in different places
CN103802397A (en) * 2012-11-08 2014-05-21 中国南玻集团股份有限公司 Low-radiation glass with neutral transmitting color
CN103264549A (en) * 2013-05-17 2013-08-28 中国南玻集团股份有限公司 Infrared ray shielding glass with front surface and side surface having consistent reflection hues
TW201402497A (en) * 2013-09-25 2014-01-16 Taiwan Glass Industry Corp Reinforceable triple-silver low-E coated glass

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Application publication date: 20150218