CN104349077B - 固态成像装置、其驱动方法和电子设备 - Google Patents

固态成像装置、其驱动方法和电子设备 Download PDF

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Publication number
CN104349077B
CN104349077B CN201410337829.0A CN201410337829A CN104349077B CN 104349077 B CN104349077 B CN 104349077B CN 201410337829 A CN201410337829 A CN 201410337829A CN 104349077 B CN104349077 B CN 104349077B
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China
Prior art keywords
charge
transmission gate
photo
conversion element
electric conversion
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Expired - Fee Related
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CN201410337829.0A
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English (en)
Chinese (zh)
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CN104349077A (zh
Inventor
萩原浩树
户谷贵宏
沼津真也
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/583—Control of the dynamic range involving two or more exposures acquired simultaneously with different integration times
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201410337829.0A 2013-07-23 2014-07-16 固态成像装置、其驱动方法和电子设备 Expired - Fee Related CN104349077B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013152895A JP2015023250A (ja) 2013-07-23 2013-07-23 固体撮像素子及びその駆動方法、並びに電子機器
JP2013-152895 2013-07-23

Publications (2)

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CN104349077A CN104349077A (zh) 2015-02-11
CN104349077B true CN104349077B (zh) 2019-06-14

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US (1) US9571772B2 (https=)
JP (1) JP2015023250A (https=)
CN (1) CN104349077B (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6141160B2 (ja) 2013-09-25 2017-06-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子およびその動作方法、並びに電子機器およびその動作方法
KR102414038B1 (ko) * 2015-09-16 2022-06-30 에스케이하이닉스 주식회사 수직 전송 게이트를 갖는 이미지 센서 및 그 제조방법
US9521351B1 (en) 2015-09-21 2016-12-13 Rambus Inc. Fractional-readout oversampled image sensor
JP2017130567A (ja) * 2016-01-21 2017-07-27 ソニー株式会社 固体撮像素子および撮像装置
JP6904730B2 (ja) 2016-03-08 2021-07-21 株式会社半導体エネルギー研究所 撮像装置
CN110073494A (zh) 2016-12-15 2019-07-30 Towerjazz松下半导体有限公司 固体摄像元件
JP2018148039A (ja) 2017-03-06 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および固体撮像装置の製造方法
CN107018341B (zh) * 2017-04-14 2020-04-03 中国科学院长春光学精密机械与物理研究所 一种tdi ccd图像传感器以及驱动方法
CN108417593B (zh) * 2018-02-27 2020-11-27 上海集成电路研发中心有限公司 图像传感器、像素结构及其控制方法
US11297252B2 (en) 2018-05-23 2022-04-05 Sony Corporation Signal processing apparatus and signal processing method, and imaging device
US20200099878A1 (en) * 2018-09-25 2020-03-26 Omnivision Technologies, Inc. Cmos image sensor with multiple stage transfer gate
US12131574B2 (en) 2020-03-30 2024-10-29 Sony Semiconductor Solutions Corporation Electronic equipment
EP4261890A4 (en) * 2020-12-08 2024-05-22 Sony Semiconductor Solutions Corporation SOLID-STATE IMAGING ELEMENT, IMAGING DEVICE AND METHOD FOR CONTROLLING A SOLID-STATE IMAGING UNIT
JPWO2023042498A1 (https=) * 2021-09-17 2023-03-23
CN118610222B (zh) * 2024-08-01 2024-12-03 合肥海图微电子有限公司 一种图像传感器及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1627524A (zh) * 2003-12-12 2005-06-15 佳能株式会社 光电变换装置及其制造方法和摄像系统
CN101562707A (zh) * 2008-04-03 2009-10-21 索尼株式会社 固体摄像器件、固体摄像器件的驱动方法以及电子装置
US7952121B2 (en) * 2007-08-28 2011-05-31 Sanyo Electric Co., Ltd. Image sensor and sensor unit
CN102208424A (zh) * 2010-03-31 2011-10-05 索尼公司 固体摄像装置、固体摄像装置的制造方法及电子装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4003549B2 (ja) * 2001-06-28 2007-11-07 日本ビクター株式会社 固体撮像装置
JP4403687B2 (ja) * 2002-09-18 2010-01-27 ソニー株式会社 固体撮像装置およびその駆動制御方法
US8026966B2 (en) * 2006-08-29 2011-09-27 Micron Technology, Inc. Method, apparatus and system providing a storage gate pixel with high dynamic range
US7829834B2 (en) * 2006-10-20 2010-11-09 Electronics And Telecommunications Research Institute Low-voltage image sensor having multiple gates between a photodiode and a diffusion node for suppressing dark current and method of driving transfer transistor thereof
US8009216B2 (en) * 2008-07-16 2011-08-30 International Business Machines Corporation Pixel sensor cell with frame storage capability
JP5258551B2 (ja) * 2008-12-26 2013-08-07 キヤノン株式会社 固体撮像装置、その駆動方法及び撮像システム
JP5516960B2 (ja) 2010-04-02 2014-06-11 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、および、電子機器
JP5673063B2 (ja) * 2010-12-15 2015-02-18 ソニー株式会社 固体撮像素子および駆動方法、並びに電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1627524A (zh) * 2003-12-12 2005-06-15 佳能株式会社 光电变换装置及其制造方法和摄像系统
US7952121B2 (en) * 2007-08-28 2011-05-31 Sanyo Electric Co., Ltd. Image sensor and sensor unit
CN101562707A (zh) * 2008-04-03 2009-10-21 索尼株式会社 固体摄像器件、固体摄像器件的驱动方法以及电子装置
CN102208424A (zh) * 2010-03-31 2011-10-05 索尼公司 固体摄像装置、固体摄像装置的制造方法及电子装置

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US9571772B2 (en) 2017-02-14
JP2015023250A (ja) 2015-02-02
CN104349077A (zh) 2015-02-11
US20150028189A1 (en) 2015-01-29

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