CN104347613A - Chip having electrostatic discharge protection function - Google Patents
Chip having electrostatic discharge protection function Download PDFInfo
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- CN104347613A CN104347613A CN201310346737.4A CN201310346737A CN104347613A CN 104347613 A CN104347613 A CN 104347613A CN 201310346737 A CN201310346737 A CN 201310346737A CN 104347613 A CN104347613 A CN 104347613A
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- electrically connected
- electrostatic discharge
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Abstract
A chip having an electrostatic discharge protection function comprises two power rail lines, a pin, a P type fin field effect transistor, an N type fin field effect transistor, two fin resistors, two diodes and an electrostatic discharge unit. The pin is electrically connected with one power rail line sequentially through one fin resistor and the P type fin field effect transistor and is electrically connected with the other power rail line sequentially through the other fin resistor and the N type fin field effect transistor. Control ends of the two above fin field effect transistors are used for receiving transmission signals. The pin is electrically connected with the two power rail lines respectively through the two diodes. Additionally, the electrostatic discharge unit is electrically connected between the two power rail lines to form into an electrostatic discharge path.
Description
Technical field
The invention relates to a kind of chip, in particular to a kind of chip of tool electrostatic discharge protection.
Background technology
Development along with science and technology is maked rapid progress and the progress of manufacture of semiconductor technology, the size micro of the electronic component of chip internal is to only there being tens of how rice, therefore the burst voltage cannot expected or electric current all may cause damage by the electronic component trickle to these sizes, such as static discharge (ElectroStatic Discharge, ESD) just can import by the external pins of chip (Pins) and cause damage to the electronic component of chip internal.
Under these circumstances, how the electronic component of protect IC inside is not by the electrostatic discharges happened suddenly, just become each chip design vendors required faced by important topic.
Summary of the invention
The invention provides a kind of chip of tool electrostatic discharge protection, it includes the first power track, second source path, pin, P type fin formula field effect transistor, the first fin resistance, N-type fin formula field effect transistor, the second fin resistance, the first diode, the second diode and static discharge unit.First power track is in order to be electrically connected supply voltage, and second source path is in order to be electrically connected reference potential.P type fin formula field effect transistor has first end, the second end and control end, and the first end of P type fin formula field effect transistor is electrically connected the first power track, and the control end of P type fin formula field effect transistor is in order to receive signal transmission.First fin resistance has first end, the second end and control end, and the first end of the first fin resistance and control end are all electrically connected the second end of P type fin formula field effect transistor, and the second end of the first fin resistance is electrically connected above-mentioned pin.N-type fin formula field effect transistor has first end, the second end and control end, and the second end of N-type fin formula field effect transistor is electrically connected second source path, and the control end of N-type fin formula field effect transistor is in order to receive said transmission signal.Second fin resistance has first end, the second end and control end, and the second end of the second fin resistance and control end are all electrically connected the first end of N-type fin formula field effect transistor, and the first end of the second fin resistance is electrically connected above-mentioned pin.The anode of the first diode is electrically connected above-mentioned pin, and its negative electrode is then electrically connected the first power track.The anode of the second diode is electrically connected second source path, and its negative electrode is then electrically connected above-mentioned pin.As for static discharge unit, it is electrically connected between the first power track and second source path, in order to provide the electrostatic discharging path between the first power track and second source path.
The present invention is provided with the electrostatic discharge protective circuit be made up of two fin resistance, two diodes and a static discharge unit at the pin place of chip; therefore can provide electrostatic discharging path when pin generation electrostatic discharge event, avoid the main circuit of chip internal to be subject to the destruction of static discharge.In addition, because fin resistance can present high impedance when pin generation electrostatic discharge event, the output buffer of the signal transmission be made up of P type fin formula field effect transistor and N-type fin formula field effect transistor therefore can be avoided also to be subject to the destruction of static discharge.
Accompanying drawing explanation
Fig. 1 represents an embodiment of the chip of tool electrostatic discharge protection of the present invention;
Fig. 2 is the schematic perspective view illustrating N-type fin resistance;
Fig. 3 is the generalized section illustrating the N-type fin resistance presenting high impedance status;
Fig. 4 is the generalized section illustrating the N-type fin resistance presenting low impedance state;
Fig. 5 represents another embodiment of the chip of tool electrostatic discharge protection of the present invention.
[label declaration]
200,400: chip 201,202: power track
21:P type fin formula field effect transistor 22:N type fin formula field effect transistor
23,24: fin resistance 300:N type fin resistance
25,26: diode 27: pin
28,410: static discharge unit 28-1,412:N transistor npn npn
28-2: parasitic bipolarity junction transistor
211,221,231,241,281,304,413: first end
212,222,232,242,282,306,414: the second ends
213,223,233,243,283,302: control end
308,312:N type high-doped zone 310:N type doped regions
314: insulating barrier 316: matrix
416: electrostatic discharge testing circuit IN: signal transmission
VDD: supply voltage VSS: reference potential
Embodiment
Fig. 1 is the chip of a kind of tool electrostatic discharge protection illustrated according to one embodiment of the invention.As shown in Figure 1, this chip 200 includes power track 201, power track 202, pin 27, P type fin formula field effect transistor 21, fin resistance 23, N-type fin formula field effect transistor 22, fin resistance 24, diode 25, diode 26 and static discharge unit 28.Power track 201 is in order to be electrically connected supply voltage VDD, and power track 202 is in order to be electrically connected reference potential VSS.P type fin formula field effect transistor 21 has first end 211, second end 212 and control end 213, and the first end 211 of P type fin formula field effect transistor 21 is electrically connected power track 201, and the control end 213 of P type fin formula field effect transistor 21 is in order to receive signal transmission IN.Fin resistance 23 has first end 231, second end 232 and control end 233, and the first end 231 of fin resistance 23 and control end 233 are all electrically connected the second end 212 of P type fin formula field effect transistor 21, and the second end 232 of fin resistance 23 is electrically connected pin 27.About the explanation of fin resistance will in rear detailed description.
N-type fin formula field effect transistor 22 has first end 221, second end 222 and control end 223, and the second end 222 of N-type fin formula field effect transistor 22 is electrically connected power track 202, and the control end 223 of N-type fin formula field effect transistor 22 is in order to receive signal transmission IN.Fin resistance 24 has first end 241, second end 242 and control end 243, and the second end 242 of fin resistance 24 and control end 243 are all electrically connected the first end 221 of N-type fin formula field effect transistor 22, and the first end 241 of fin resistance 24 is electrically connected pin 27.The anode of diode 25 is electrically connected pin 27, and its negative electrode is electrically connected power track 201.The anode of diode 26 is electrically connected power track 202, and the electrical connecting leads 27 of its negative electrode.Static discharge unit 28 is electrically connected between power track 201 and 202, in order to provide the electrostatic discharging path between power track 201 and 202.In this embodiment, static discharge unit 28 realizes with a N-type transistor 28-1.This N-type transistor 28-1 has first end 281, second end 282 and control end 283, and the first end 281 of transistor 28-1 is electrically connected power track 201, and second end 282 of transistor 28-1 is all electrically connected power track 202 with control end 283.In addition, in this instance, fin resistance 23 and 24 all realizes with a N-type fin resistance, with Fig. 2 ~ 4, it is described.
Fig. 2 is the schematic perspective view illustrating N-type fin resistance; Fig. 3 is the generalized section illustrating the N-type fin resistance presenting high impedance status; And Fig. 4 is the generalized section illustrating the N-type fin resistance presenting low impedance state.In Fig. 2 ~ 4, indicate 300 and namely represent described N-type fin resistance.In addition, in Fig. 3 and 4, indicate the control end (i.e. grid) that 302 represent N-type fin resistance 300, indicate 304 first ends representing N-type fin resistance 300 (namely wherein a source/drain), indicate the second end (i.e. another source/drain) that 306 represent N-type fin resistance 300, indicate 308 and 312 and be all expressed as N-type high-doped zone, indicate 310 and be expressed as N-type doped regions, indicate 314 and represent insulating barriers, and indicate 316 and be expressed as matrix.When the grid voltage of N-type fin resistance 300 is much smaller than drain voltage, so N-type fin resistance 300 will present the high impedance status shown in Fig. 3; When the grid voltage of N-type fin resistance 300 is close with the voltage swing of drain voltage, so N-type fin resistance 300 will present the low impedance state shown in Fig. 4.
Referring again to Fig. 1, when there is electrostatic discharge event in pin 27, the voltage of the second end 232 of fin resistance 23 can much larger than the voltage of the first end 231 of fin resistance 23 with control end 233, and therefore now the second end 232 of fin resistance 23 forms drain electrode and fin resistance 23 can present high impedance status.Similarly, when there is static discharge in pin 27, the voltage of the first end 241 of fin resistance 24 can much larger than the voltage of the second end 242 of fin resistance 24 with control end 243, and therefore now the first end 241 of fin resistance 24 forms drain electrode and fin resistance 24 also can present high impedance status.Simultaneously, N-type transistor 28-1 as static discharge unit 28 then can trigger bipolarity junction transistor (the bipolar junction transistor of its transistor internal parasitism by static discharge, BJT) 28-2 conducting, to form the electrostatic discharging path between power track 201 and 202.
Thus, the static discharge current imported into by pin 27 just sequentially can conduct to power track 202 via power track 201 and N-type transistor 28-1.In addition, because the static discharge current imported into from pin 27 can be subject to the suppression of fin resistance 23 and 24, therefore can avoid P type fin formula field effect transistor 21, N-type fin formula field effect transistor 22 and provide the front-end circuit of signal transmission IN (namely the core circuit of chip 200, does not indicate) to be subject to the infringement of static discharge.In addition, electrostatic discharge event is there is not at pin 27, and signal transmission IN is when presenting high level (high), N-type fin formula field effect transistor 22 meeting conducting, and the voltage being in the first end 241 of suspension joint (floating) state in fin resistance 24 can be pulled to close with the voltage of the second end 242, fin resistance 24 is thus made to present low impedance state.Thus, the signal transmission IN presenting high level just can normally be sent to pin 27.Otherwise, electrostatic discharge event is there is not at pin 27, and signal transmission IN is when presenting low level (low), P type fin formula field effect transistor 21 meeting conducting, and the voltage being in the second end 232 of floating in fin resistance 23 can be pulled to close with the voltage of first end 231, thus makes fin resistance 23 present low impedance state.Thus, present low level signal transmission IN and also can normally be sent to pin 27.
Although in the above description, fin resistance 23 and 24 all adopts a N-type fin resistance to realize, so this and be not used to limit the present invention, in fact, fin resistance 23 and 24 also can all adopt a P type fin resistance to realize.The operating principle of P type fin resistance is similar to the operating principle of N-type fin resistance, and identical with the electric connection mode between other component, just repeats no more at this.In addition, static discharge unit 28 also can be that employing one P-type crystal pipe realizes, only the control end electrotropism of this P-type crystal pipe connects power track 201, and the electric connection mode of all the other pins of this P-type crystal pipe is then identical with the electric connection mode of the second end 282 with the first end 281 of aforementioned N-type transistor 28-1.
Fig. 5 is the chip of a kind of tool electrostatic discharge protection illustrated according to another embodiment of the present invention.In Figure 5, indicate person identical with the sign in Fig. 1 and be expressed as identical object or signal.Chip shown in Fig. 5 400 and the difference of aforementioned chip 200 be in, the static discharge unit 410 of chip 400 is made up of N-type transistor 412 and electrostatic discharge testing circuit 416.The first end 413 of N-type transistor 412 and the second end 414 are electrically connected power track 201 and 202 respectively.The input of electrostatic discharge testing circuit 416 is electrically connected power track 201, and output is then electrically connected the control end 415 of N-type transistor 412.And this electrostatic discharge testing circuit 416 detects pin 27 in order to the change in voltage according to power track 201 whether electrostatic discharge event occurs, and determine whether provide enable signal to open N-type transistor 412 to the control end 415 of N-type transistor 412 according to this.Certainly, N-type transistor 412 also can directly be replaced with a P-type crystal pipe, and the electric connection mode of each pin of this P-type crystal pipe is identical with the electric connection mode of each pin of N-type transistor 412.
In sum; the present invention is provided with the electrostatic discharge protective circuit be made up of two fin resistance, two diodes and a static discharge unit at the pin place of chip; therefore can provide electrostatic discharging path when pin generation electrostatic discharge event, avoid the main circuit of chip internal to be subject to the destruction of static discharge.In addition, because fin resistance can present high impedance when pin generation electrostatic discharge event, the output buffer of the signal transmission be made up of P type fin formula field effect transistor and N-type fin formula field effect transistor therefore can be avoided also to be subject to the destruction of static discharge.
Although the present invention discloses as above with preferred embodiment; so itself and be not used to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; when doing a little change and retouching, therefore protection scope of the present invention is when being as the criterion depending on the appended right person of defining.
Claims (7)
1. a chip for tool electrostatic discharge protection, it comprises:
One first power track, in order to be electrically connected a supply voltage;
One second source path, in order to be electrically connected a reference potential;
One pin;
One P type fin formula field effect transistor, have a first end, one second end and one first control end, this first end is electrically connected this first power track, and this first control end is in order to receive a signal transmission;
One first fin resistance, have one the 3rd end, one the 4th end and one second control end, the 3rd end and this second control end are all electrically connected this second end, and the 4th end is electrically connected this pin;
One N-type fin formula field effect transistor, have a five terminal, one the 6th end and one the 3rd control end, the 6th end is electrically connected this second source path, and the 3rd control end is in order to receive this signal transmission;
One second fin resistance, have one the 7th end, one the 8th end and one the 4th control end, the 8th end and the 4th control end are all electrically connected this five terminal, and the 7th end is electrically connected this pin;
One first diode, its anode is electrically connected this pin, and its negative electrode is electrically connected this first power track;
One second diode, its anode is electrically connected this second source path, and its negative electrode is electrically connected this pin; And
One static discharge unit, is electrically connected between this first power track and this second source path, in order to provide the electrostatic discharging path between this first power track and this second source path.
2. the chip of tool electrostatic discharge protection according to claim 1, wherein this first fin resistance and this second fin resistance are all a N-type fin resistance.
3. the chip of tool electrostatic discharge protection according to claim 1, wherein this first fin resistance and this second fin resistance are all a P type fin resistance.
4. the chip of tool electrostatic discharge protection according to claim 1, wherein this static discharge unit comprises:
One N-type transistor, have one the 9th end, 1 the tenth end and one the 5th control end, the 9th end is electrically connected this first power track, and the tenth end and the 5th control end are all electrically connected this second source path.
5. the chip of tool electrostatic discharge protection according to claim 1, wherein this static discharge unit comprises:
One P-type crystal pipe, have one the 9th end, 1 the tenth end and one the 5th control end, the 9th end and the 5th control end are all electrically connected this first power track, and the tenth end is electrically connected this second source path.
6. the chip of tool electrostatic discharge protection according to claim 1, wherein this static discharge unit comprises:
One N-type transistor, have one the 9th end, 1 the tenth end and one the 5th control end, the 9th end is electrically connected this first power track, and the tenth end electrically this second source path; And
One electrostatic discharge testing circuit, be electrically connected between this first power track and the 5th control end, detect whether an electrostatic discharge event occurs in order to the change in voltage according to this first power track, and determine whether provide an enable signal to open this N-type transistor to the 5th control end according to this.
7. the chip of tool electrostatic discharge protection according to claim 1, wherein this static discharge unit comprises:
One P-type crystal pipe, have one the 9th end, 1 the tenth end and one the 5th control end, the 9th end is electrically connected this first power track, and the tenth end electrically this second source path; And
One electrostatic discharge testing circuit, be electrically connected between this first power track and the 5th control end, detect whether an electrostatic discharge event occurs in order to the change in voltage according to this first power track, and determine whether provide an enable signal to open this P-type crystal pipe to the 5th control end according to this.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310346737.4A CN104347613B (en) | 2013-08-09 | 2013-08-09 | Has the chip of electrostatic discharge protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310346737.4A CN104347613B (en) | 2013-08-09 | 2013-08-09 | Has the chip of electrostatic discharge protection |
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| Publication Number | Publication Date |
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| CN104347613A true CN104347613A (en) | 2015-02-11 |
| CN104347613B CN104347613B (en) | 2017-07-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310346737.4A Active CN104347613B (en) | 2013-08-09 | 2013-08-09 | Has the chip of electrostatic discharge protection |
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| WO2007145307A1 (en) * | 2006-06-15 | 2007-12-21 | Renesas Technology Corp. | Semiconductor integrated circuit device |
| CN101286509A (en) * | 2007-04-12 | 2008-10-15 | 恩益禧电子股份有限公司 | Electrostatic protection circuit |
| US20090050970A1 (en) * | 2007-08-24 | 2009-02-26 | Jens Schneider | Diode-Based ESD Concept for DEMOS Protection |
| CN101421896A (en) * | 2006-04-21 | 2009-04-29 | 沙诺夫公司 | ESD clamp control by detection of power state |
| TWI337376B (en) * | 2005-08-19 | 2011-02-11 | Infineon Technologies Ag | Gate-gesteuertes fin-widerstandselement zur verwendung als esd-schutzelement in einem elektrischen schaltkreis und einrichtung zum schutz vor elektrostatischen entladungen in einem elektrischen schaltkreis |
| JP2011096897A (en) * | 2009-10-30 | 2011-05-12 | Renesas Electronics Corp | Semiconductor device, and electronic apparatus |
| CN102662426A (en) * | 2012-05-07 | 2012-09-12 | 中国航天科技集团公司第九研究院第七七一研究所 | Output driving circuit with self electrostatic discharge (ESD) protection function |
| CN102693978A (en) * | 2011-03-25 | 2012-09-26 | 瑞昱半导体股份有限公司 | Electrostatic discharge protection circuit |
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2013
- 2013-08-09 CN CN201310346737.4A patent/CN104347613B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI337376B (en) * | 2005-08-19 | 2011-02-11 | Infineon Technologies Ag | Gate-gesteuertes fin-widerstandselement zur verwendung als esd-schutzelement in einem elektrischen schaltkreis und einrichtung zum schutz vor elektrostatischen entladungen in einem elektrischen schaltkreis |
| CN101421896A (en) * | 2006-04-21 | 2009-04-29 | 沙诺夫公司 | ESD clamp control by detection of power state |
| WO2007145307A1 (en) * | 2006-06-15 | 2007-12-21 | Renesas Technology Corp. | Semiconductor integrated circuit device |
| CN101286509A (en) * | 2007-04-12 | 2008-10-15 | 恩益禧电子股份有限公司 | Electrostatic protection circuit |
| US20090050970A1 (en) * | 2007-08-24 | 2009-02-26 | Jens Schneider | Diode-Based ESD Concept for DEMOS Protection |
| JP2011096897A (en) * | 2009-10-30 | 2011-05-12 | Renesas Electronics Corp | Semiconductor device, and electronic apparatus |
| CN102693978A (en) * | 2011-03-25 | 2012-09-26 | 瑞昱半导体股份有限公司 | Electrostatic discharge protection circuit |
| CN102662426A (en) * | 2012-05-07 | 2012-09-12 | 中国航天科技集团公司第九研究院第七七一研究所 | Output driving circuit with self electrostatic discharge (ESD) protection function |
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| CN104347613B (en) | 2017-07-14 |
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