CN101707368A - Electrostatic damage protective device with noise immunologic function and control method thereof - Google Patents
Electrostatic damage protective device with noise immunologic function and control method thereof Download PDFInfo
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- CN101707368A CN101707368A CN200910051383A CN200910051383A CN101707368A CN 101707368 A CN101707368 A CN 101707368A CN 200910051383 A CN200910051383 A CN 200910051383A CN 200910051383 A CN200910051383 A CN 200910051383A CN 101707368 A CN101707368 A CN 101707368A
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Abstract
The invention provides an electrostatic damage protective device with a noise immunologic function, which comprises a detection circuit, an active drive circuit, a current discharge circuit and an alternating-current voltage division circuit, wherein the detection circuit comprises a capacitive device and a resistive device; the active drive circuit comprises a one-level or multi-level inverter, and can contain no inverter of the part of the circuit under a specific application; and the current discharge circuit comprises an N-type transistor or a P-type transistor. The electrostatic damage protective device also comprises the alternating-current voltage division circuit which is connected to two ends of the resistive device of the detection circuit in parallel. The electrostatic damage protective device pre-adjusts the input end voltage of the active drive circuit when the electrostatic damage protective device is influenced by electrostatic fluctuations by using the voltage division action of the alternating-current voltage division circuit under an alternating-current environment so that the current discharge circuit cannot be turned on by mistake, and the electrostatic damage protective device has the noise immunologic function.
Description
Technical field
The present invention relates to electrostatic damage protective device, especially the electrostatic damage protective device of integrated circuit (IC) chip particularly, relates to the electrostatic damage protective device with noise immunologic function.
Background technology
In the reliability design of CMOS integrated circuit; an important link is exactly electrostatic breakdown (ESD; electrostatic discharge) design problem of protective circuit has statistics to show, has in the reason of ic failure more than 1/3 and causes owing to ESD.Yet the ESD phenomenon is present in the whole process of production, encapsulation, transportation and use of integrated circuit, and therefore effective ways that improve IC reliability are exactly or/and outside according to the different suitable esd protection circuits of needs adding at chip internal.
For integrated circuit, static discharge is described with three kinds of physical models usually, be respectively manikin (HBM, human body model), machine mould (MM, machine model) and charging device model (CDM, charged-device model), represent the dissimilar static discharges in the real world separately.The ESD protection circuit of IO and the ESD protection circuit between POWER (power clamp) have constituted the ESD protection of whole integrated circuit (IC) chip jointly.
Aspect the ESD protection between POWER, when ESD voltage is added between VDD and the GND, except meeting causes integrated circuit (IC) chip internal circuit damage, also often triggers some parasitic semiconductor element conductings and burn.In the CMOS integrated circuit, SCR element that the modal parasitic antenna that burns is exactly p-n-p-n and the BJT transistor of n-p-n.Along with the continuous development of integrated circuit fabrication process, the spacing of parasitic antenna is also more and more littler, and this makes them have higher gain and is more prone to be triggered.Therefore, the esd protection unit between power supply and the ground need possess opening speed fast, can bearing great current, characteristics such as conducting voltage is low, itself is not fragile.Power supply esd protection element circuit commonly used at present is a MOS discharge tube by the control of static discharge circuit for detecting.
In the prior art, esd detection circuit is made of the RC circuit, because integrated circuit (IC) chip is worked in the system that is made up of many other electronic equipments that is everlasting, various electronic equipments can send the noise of a large amount of different frequencies when work, also there are simultaneously various noises (for example radio wave, electromagnetic radiation) in the external environment.These noises also may make the pin voltage of integrated circuit (IC) chip produce unusual fluctuation, and these voltage fluctuations also can cause the unlatching of NMOS discharge tube.In addition, when the voltage of first pin rises in normal operation or descends (for example the chip power pin power on or turn off process similarly), the grid of NMOS pipe may finally be coupled in the variation of voltage equally by electric capacity, buffer, make the NMOS pipe open, influence the operate as normal of chip.This is not that the design esd protection circuit is wished the result that brings.Pin voltage of causing of ESD fluctuates no thanks to that we are called noise fluctuations for these, needs to avoid esd protection circuit misoperation to occur in the design in noise fluctuations.
Summary of the invention
At defective of the prior art, the technical problem to be solved in the present invention provides a kind of electrostatic damage protective device with noise immunologic function, it not only can prevent that static from causing electrostatic breakdown to integrated circuit (IC) chip, and has the noise fluctuations avoided and cause the current drain circuit to open by mistake the function that opens.
According to an aspect of the present invention, a kind of electrostatic damage protective device with noise immunologic function is provided, it comprises testing circuit, active driving circuit and current drain circuit. described testing circuit comprises a capacitive device, a resistive device. described active driving circuit comprises one or more levels inverter, the inverter that can not comprise this partial circuit under the special applications. described current drain circuit comprises a N transistor npn npn or a P transistor npn npn. it is characterized in that, described electrostatic damage protective device also comprises an interchange bleeder circuit, and described interchange bleeder circuit is connected in parallel on the resistive device two ends of described testing circuit.
The present invention is by being connected in parallel on described interchange bleeder circuit at the resistive device two ends of described testing circuit, can utilize its dividing potential drop effect under communication environment, regulate the input terminal voltage of electrostatic damage protective device described active driving circuit when being subjected to the static influence of fluctuations in advance, make the current drain circuit can not open by mistake and open that electrostatic damage protective device has had noise immunologic function; And under the bigger situation of the capacitive device appearance value error of described testing circuit, because the setting of the input terminal voltage of described active driving circuit is definite with the capacitive ratio of device in exchanging bleeder circuit according to the capacitive device of described testing circuit, can regulate electrostatic damage protective device in advance and when being subjected to the static influence of fluctuations, open the noise threshold voltage of described active driving circuit, noise voltage is carried out dividing potential drop, the shielding noise is to the interference of current drain circuit, and it is less to make that the setting of input terminal voltage of described active driving circuit is influenced by the capacitance error of described testing circuit, and the accuracy of electrostatic damage protective device work is improved.
Preferably, the pin that an end of described interchange bleeder circuit connects is described second pin, and an end of the capacitive device of described testing circuit connects described first pin, and an end of the resistive device of described testing circuit connects described second pin.
Preferably, described current drain circuit comprises a N transistor npn npn, the grid of described N transistor npn npn connects the output of described active driving circuit as the control end of described current drain circuit, and described active driving circuit comprises that zero level or even level inverter connect mutually.
Preferably, described current drain circuit comprises a P transistor npn npn, and the grid of described P transistor npn npn connects the output of described active driving circuit as the control end of described current drain circuit, and described active driving circuit comprises that the odd level inverter connects mutually.
Preferably, the pin that an end of described interchange bleeder circuit connects is described first pin, and an end of the capacitive device of described testing circuit connects described second pin, and an end of the resistive device of described testing circuit connects described first pin.
Preferably, described current drain circuit comprises a N transistor npn npn, and the grid of described N transistor npn npn connects the output of described active driving circuit as the control end of described current drain circuit, and described active driving circuit comprises that the odd level inverter connects mutually.
Preferably, described current drain circuit comprises a P transistor npn npn, the grid of described P transistor npn npn connects the output of described active driving circuit as the control end of described current drain circuit, and described active driving circuit comprises that zero level or even level inverter connect mutually.
Preferably, described interchange bleeder circuit comprises electric capacity.
Preferably, described interchange bleeder circuit comprises N transistor npn npn or P transistor npn npn.
Preferably, the N transistor npn npn of described interchange bleeder circuit or the grid of P transistor npn npn connect the input of described active driving circuit, and the transistorized source electrode of described interchange bleeder circuit, drain electrode and substrate connect a described pin near the testing circuit resistive device.
Preferably, the N transistor npn npn of described interchange bleeder circuit or the grid of P transistor npn npn connect a described pin near the testing circuit resistive device, and transistorized source electrode, drain electrode and the substrate of described interchange bleeder circuit connects the input of described active driving circuit.
Preferably, the capacitive device of described testing circuit comprises electric capacity, and described electric capacity is connected across between the input and a described close pin of testing circuit resistive device of described active driving circuit.
Preferably, the capacitive device of described testing circuit comprises N transistor npn npn or P transistor npn npn.
Preferably, the transistorized grid of described testing circuit capacitive device connects the input of described active driving circuit, and the described transistorized source electrode of described testing circuit capacitive device, drain electrode and substrate connect a described pin near the testing circuit capacitive device.
Preferably, the transistorized grid of described testing circuit capacitive device connects a described pin near the testing circuit capacitive device, and transistorized source electrode, drain electrode and the substrate of described testing circuit capacitive device connects the input of described active driving circuit.
Preferably, the resistive device of described testing circuit comprises any in the following element:
Resistance;
The N transistor npn npn, the source electrode of the N transistor npn npn of described testing circuit resistive device and substrate connect a described pin near the testing circuit resistive device, the grid of the N transistor npn npn of described testing circuit resistive device connects first pin of described electrostatic damage protective device, and the drain electrode of the N transistor npn npn of described testing circuit resistive device connects the input of described active driving circuit; And
The P transistor npn npn, the source electrode of the P transistor npn npn of described testing circuit resistive device and substrate connect a described pin near the testing circuit resistive device, the grid of the P transistor npn npn of described testing circuit resistive device connects second pin of described electrostatic damage protective device, and the drain electrode of the P transistor npn npn of described testing circuit resistive device connects the input of described active driving circuit.
According to another aspect of the present invention, also provide a kind of in having the electrostatic damage protective device of noise immunologic function, being used for that noise fluctuations is carried out dividing potential drop, the control method that the shielding noise fluctuations is disturbed the current drain circuit, wherein said electrostatic damage protective device comprises testing circuit, active driving circuit, current drain circuit and exchanges bleeder circuit that wherein said control method comprises the steps:
The described testing circuit of step a. detects electrostatic induced current or noise fluctuations, and detected electrostatic potential information and noise voltage information are transmitted to described interchange bleeder circuit;
The described interchange bleeder circuit of step b. transmits electrostatic potential information and noise voltage information after receiving electrostatic potential information and noise voltage information again to described active driving circuit;
The described active driving circuit of step c compares the electrostatic potential information received and noise voltage information and pre-set threshold magnitude of voltage, judge whether to be subjected to electrostatic breakdown and need the firing current leadage circuit, and give described current drain circuit this judged result message transmission; And
Steps d. described current drain circuit is after receiving judged result information, according to this information and executing current drain work;
It is characterized in that, in step b, be included in also that described interchange bleeder circuit is received after the electrostatic potential information of described testing circuit transmission and the noise voltage information and with electrostatic potential information and noise voltage information before described active driving circuit transmission, electrostatic induced current or noise fluctuations are carried out the operation of dividing potential drop according to predefined capacitance ratio between the capacitive device of described interchange bleeder circuit and testing circuit.
According to a further aspect of the invention, also provide a kind of integrated circuit, comprise power pins, internal circuit, it is characterized in that, described integrated circuit also comprises any one electrostatic damage protective device that the invention described above provides.
Description of drawings
By reading the detailed description of non-limiting example being done with reference to the following drawings, it is more obvious that other features, objects and advantages of the present invention will become:
Fig. 1 shows the schematic diagram with electrostatic damage protective device of noise immunologic function provided by the present invention;
Fig. 2 shows the schematic diagram of static fluctuation and noise fluctuations generation voltage;
Fig. 3 shows the circuit theory diagrams with electrostatic damage protective device first embodiment of noise immunologic function provided by the present invention;
Fig. 4 shows first of above-mentioned first embodiment of the invention shown in Figure 3 and changes example, described circuit theory diagrams with electrostatic damage protective device of noise immunologic function;
Fig. 5 shows second of above-mentioned first embodiment of the invention shown in Figure 3 and changes example, described circuit theory diagrams with electrostatic damage protective device of noise immunologic function;
Fig. 6 shows the 3rd of above-mentioned first embodiment of the invention shown in Figure 3 and changes example, described circuit theory diagrams with electrostatic damage protective device of noise immunologic function;
Fig. 7 shows the 4th of above-mentioned first embodiment of the invention shown in Figure 3 and changes example, described circuit theory diagrams with electrostatic damage protective device of noise immunologic function;
Fig. 8 shows the circuit theory diagrams with electrostatic damage protective device second embodiment of noise immunologic function provided by the present invention; And
Fig. 9 shows the circuit theory diagrams with electrostatic damage protective device the 3rd embodiment of noise immunologic function provided by the present invention.
Embodiment
Fig. 1 shows the schematic diagram with electrostatic damage protective device of noise immunologic function provided by the present invention; Fig. 2 shows the schematic diagram of static fluctuation and noise fluctuations generation voltage.Those skilled in the art understand, testing circuit shown in Fig. 11, active driving circuit 2, current drain circuit 3 have been formed electrostatic damage protective device basic circuit in the prior art, wherein, described testing circuit 1 is used to detect electrostatic discharge event, when detecting static discharge, described testing circuit 1 is by the described current drain circuit 3 of the described active driving circuit 2 controls ESD electric current of releasing.More specifically; because the ESD voltage rise time is short; described current drain circuit 3 gets final product conducting and form temporary low resistive state between power vd D and ground GND (or power supply VSS) in the short time of its generation; thereby the ESD electric current can be bypassed through esd protection circuit, thereby the SCR and the BJT element of integrated circuit (IC) chip internal circuit and parasitism can not destroy because of ESD.Further, with reference to figure 2, Fig. 2 shows the aanalogvoltage of static fluctuation and noise fluctuations generation, and described noise fluctuations is compared with the static fluctuation, and the voltage maximum amplitude of described noise fluctuations is less, and rate of change is lower, and time span is longer; Characteristic at described noise fluctuations, a kind of electrostatic damage protective device with noise immunologic function is provided among the present invention, this device has not only comprised the basic circuit of electrostatic damage protective device in the above-mentioned prior art, also comprised interchange bleeder circuit 4 shown in Figure 1, its concrete connected mode and operation principle specifically describe hereinafter, do not repeat them here.
Fig. 3 shows the circuit theory diagrams with electrostatic damage protective device first embodiment of noise immunologic function provided by the present invention. reference diagram 3, shown in have a noise immunologic function electrostatic damage protective device comprise testing circuit 1, active driving circuit 2, current drain circuit 3, exchange bleeder circuit 4 and pin. described pin, comprise one first pin 7 and one second pin 8, particularly, described first pin 7 connects power vd D, described second pin 8 connects ground GND, those skilled in the art understand, described second pin 8 also can connect the described testing circuit 1 of power supply VSS. and be used to detect electrostatic induced current or noise fluctuations, comprise a capacitive device 6 and a resistive device 5, described capacitive device 6 and resistive device 5 series connection mutually are connected across between two pins, particularly, in the present embodiment, one end of the capacitive device 6 of described testing circuit connects described first pin 7, described capacitive device 6 comprises an electric capacity, one end of the resistive device 5 of described testing circuit connects described second pin 8, described resistive device 5 comprises a resistance. described active driving circuit 2 is used for 3 conductings of drive current leadage circuit or closes, the input 21 of described active driving circuit is connected between the resistive device 5 and capacitive device 6 of described testing circuit, the output 22 of described active driving circuit connects the control end 10 of described current drain circuit, particularly, in the present embodiment, described active driving circuit 2 comprises that the two-stage inverter is connected in series mutually. described current drain circuit 3 is used to the electrostatic induced current of releasing, described current drain circuit 3 connects two pins, particularly, in the present embodiment, described current drain circuit 3 comprises a N transistor npn npn, the grid of described N transistor npn npn connects the output 22 of described active driving circuit as the control end 10 of described current drain circuit, the source electrode of N transistor npn npn connects described second pin 8, the drain electrode of N transistor npn npn connects described first pin, 7. described electrostatic damage protective devices and also comprises an interchange bleeder circuit 4, described interchange bleeder circuit 4 is connected across between the input 21 and the close pin of testing circuit resistive device 5 of described electrostatic damage protective device of described active driving circuit, particularly, in the present embodiment, described interchange bleeder circuit 4 comprises an electric capacity, and the electric capacity of described interchange bleeder circuit 4 is connected across between the input 21 and described second pin 8 of described active driving circuit.
It will be appreciated by those skilled in the art that Fig. 3 has provided a kind of electrostatic damage protective device with noise immunologic function after improving on the basis of the active driving electrostatic breakdown of RC protection circuit commonly used.Particularly, in the present embodiment, entire circuit comprises testing circuit 1, active driving circuit 2, current drain circuit 3 and exchanges bleeder circuit 4.Wherein said testing circuit 1 comprises a testing circuit electric capacity and a testing circuit resistance, after described testing circuit electric capacity and the series connection of described testing circuit resistance, the other end of described testing circuit electric capacity connects first pin 7, described first pin 7 connects power vd D, the other end of described testing circuit resistance connects second pin 8, and described second pin 8 connects ground GND (or power supply VSS).Described active driving circuit 2 is formed after being connected by the two-stage inverter, the input 21 of described active driving circuit 2 is connected between described testing circuit electric capacity and the testing circuit resistance, and the output 22 of described active driving circuit 2 is connected to the grid of the N transistor npn npn of described current drain circuit 3.Described current drain circuit 3 comprises a N transistor npn npn, the source electrode of described N transistor npn npn connects described second pin 8, the drain electrode of described N transistor npn npn connects described first pin 7, and described N transistor npn npn is connected across the electrostatic induced current to release between power supply VDD and the ground GND (or power supply VSS) between first pin 7 and second pin 8.
It will be appreciated by those skilled in the art that described electrostatic damage protective device for certain electrostatic induced current protective capacities is provided, makes that the size of described N transistor npn npn is bigger.When having on first pin 7 when taking place for the electrostatic induced current of positive polarity with respect to second pin 8, described testing circuit 1 detects this electrostatic induced current incident and makes the conducting of described N transistor npn npn by described active driving circuit 2, thereby electrostatic induced current is released.Like this, when electrostatic induced current took place, the conducting of described N transistor npn npn provided the low-resistance channel of one first pin 7 to second pins 8, can make the integrated circuit (IC) chip internal wiring that is connected with described electrostatic damage protective device avoid the damage of electrostatic induced current.When electrostatic potential appears on first pin 7, electrostatic potential moment ground acute variation can be capacitively coupled on the described active driving circuit input 21 by testing circuit, make N transistor npn npn grid voltage raise, impel the conducting of described N transistor npn npn, the electrostatic induced current that appears on described first pin 7 flows to described second pin 8 by described N transistor npn npn, flows away from described second pin 8 again.By the coupling of electric capacity, make the voltage of the grid of described N transistor npn npn reach the required voltage (being N transistor npn npn threshold voltage) of described N transistor npn npn unlatching, open whole described N transistor npn npn, the phenomenon of having avoided described N transistor npn npn partly to open.When described integrated circuit (IC) chip operate as normal, the grid voltage of described N transistor npn npn does not reach described N transistor npn npn and opens required voltage (being N transistor npn npn threshold voltage), and described N transistor npn npn is in closed condition.
Particularly, in the present embodiment, in the two ends parallel connection of described electrostatic damage protective device testing circuit resistance an interchange bleeder circuit 4, described interchange bleeder circuit 4 comprises an electric capacity. those skilled in the art understand, owing to exchange the interchange dividing potential drop effect of bleeder circuit 4 electric capacity, only some can arrive the grid of described N transistor npn npn by described active driving circuit 2 to make the electrostatic potential fluctuation that appears at first pin 7, and another part flows away by exchanging bleeder circuit 4 electric capacity. for the higher electrostatic potential fluctuation of amplitude, still be large enough to make described N transistor npn npn to open by the voltage fluctuation signal after the described interchange bleeder circuit 4 electric capacity weakening, and the noise fluctuations signal lower to amplitude, be not enough to open described N transistor npn npn after weakened, so just reached and avoided noise fluctuations to cause described N transistor npn npn to open by mistake the purpose that opens.
Fig. 4 shows first of above-mentioned first embodiment of the invention shown in Figure 3 and changes example, described circuit theory diagrams with electrostatic damage protective device of noise immunologic function.With reference to figure 3 and Fig. 4, particularly, in this variation example, different with first embodiment shown in Figure 3 is, described active driving circuit 2 is designed to be made up of the zero level inverter, it will be appreciated by those skilled in the art that to be that the control end 10 of described current drain circuit directly connects between the resistive device 5 and capacitive device 6 of described testing circuit.Described testing circuit 1 will be controlled the unlatching or the shutoff of described current drain circuit 3 through the electrostatic induced current behind the described testing circuit 1 at the control end 10 that the resistive device 5 and the voltage between the capacitive device 6 of described testing circuit directly transfers to described current drain circuit this moment.
Further, those skilled in the art understand, when the circuit theory diagrams that provide according to first embodiment of the invention when the electrostatic damage protective device with noise immunologic function provided by the invention connected, described active driving circuit 2 also can be made up of the inverter more than or equal to four even level; Preferably, described active driving circuit 2 is connected in series mutually by the two-stage inverter and forms, and suboptimum ground, described active driving circuit 2 are connected in series mutually by zero level or level Four inverter and form, and this does not influence flesh and blood of the present invention, does not repeat them here.
Fig. 5 shows second of above-mentioned first embodiment of the invention shown in Figure 3 and changes example, described circuit theory diagrams with electrostatic damage protective device of noise immunologic function.With reference to figure 3 and Fig. 5, particularly, in this variation example, different with first embodiment shown in Figure 3 is, the capacitive device 6 of described testing circuit is designed to be made up of a transistor.Preferably, adopt a P transistor npn npn, the grid of described P transistor npn npn connects the input 21 of described active driving circuit, and the source electrode of described P transistor npn npn, drain electrode and substrate connect described first pin 7; Be equivalent to an electric capacity between source electrode, drain electrode and the substrate of the grid of described P transistor npn npn and P transistor npn npn at this moment.Suboptimum ground, described P transistor npn npn also can adopt grid is connected described first pin 7, and the mode that source electrode, drain electrode and substrate is connected the input 21 of described active driving circuit connects.It will be appreciated by those skilled in the art that described P transistor npn npn can also adopt other modes to connect, as long as the equivalence in described testing circuit 1 of the P transistor npn npn after connecting becomes an electric capacity.
Further, those skilled in the art understand, the capacitive device 6 of the testing circuit of the electrostatic damage protective device that provides in this variation example also can be made up of a N transistor npn npn, the connected mode that the catenation principle of this N transistor npn npn and above-mentioned second changes the P transistor npn npn in the example is identical, is about to described N transistor npn npn and connects electric capacity of equivalence one-tenth.This does not influence flesh and blood of the present invention, does not repeat them here.
Those skilled in the art understand, the capacitive device 6 that the testing circuit of the electrostatic damage protective device that provides in the example is provided first of first embodiment of the invention also can change the technical scheme that provides in the example with reference to this and arrange and be connected, this does not influence flesh and blood of the present invention, does not repeat them here.
Fig. 6 shows the 3rd of above-mentioned first embodiment of the invention shown in Figure 3 and changes example, described circuit theory diagrams with electrostatic damage protective device of noise immunologic function. reference diagram 3 and Fig. 6, particularly, in this variation example, different with first embodiment shown in Figure 3 is, the resistive device 5 of described testing circuit is designed to be made up of transistor. preferably, described resistive device 5 adopts a N transistor npn npn, the grid of the N transistor npn npn of described testing circuit resistive device 5 connects described first pin 7, the drain electrode of described N transistor npn npn connects the input 21 of described active driving circuit, the source electrode of described N transistor npn npn and substrate connect a described pin near testing circuit resistive device 5, particularly, in this variation example, the source electrode of described N transistor npn npn and substrate connect described second pin 8; Those skilled in the art understand, the grid of described N transistor npn npn is equivalent to directly connect VDD, described N transistor npn npn is in opening, be equivalent to a small resistor between the drain electrode of the source electrode of N transistor npn npn and substrate and N transistor npn npn at this moment. suboptimum ground, the resistive device 5 of described testing circuit also can adopt a P transistor npn npn, particularly, the grid of described P transistor npn npn is connected described second pin 8, the source electrode of described P transistor npn npn and substrate connect the input 21 of described active driving circuit, the drain electrode of described P transistor npn npn connects a described pin near testing circuit resistive device 5, particularly, in this variation example, the drain electrode of described P transistor npn npn connects described second pin, 8. those skilled in the art and understands, described N transistor npn npn or P transistor npn npn can also adopt other modes to connect, as long as the equivalence in described testing circuit 1 of N transistor npn npn after connecting or P transistor npn npn becomes a resistance.
Those skilled in the art understand, first of first embodiment of the invention changes the testing circuit of the electrostatic damage protective device that provides in the example is provided example and second resistive device 5 and also can change the technical scheme that provides in the example with reference to this and arrange and be connected, this does not influence flesh and blood of the present invention, does not repeat them here.
Fig. 7 shows the 4th of above-mentioned first embodiment of the invention shown in Figure 3 and changes example, described circuit theory diagrams with electrostatic damage protective device of noise immunologic function.With reference to figure 3 and Fig. 7, in this variation example, different with first embodiment shown in Figure 3 is, described current drain circuit 3 is made up of the P transistor npn npn, and described active driving circuit 2 comprises the one-level inverter.Particularly, in this variation example, the grid of described P transistor npn npn connects the output 22 of described active driving circuit as the control end 10 of described current drain circuit, the source electrode of P transistor npn npn is connected described first pin 7 with substrate, drain electrode connects described second pin 8, and described active driving circuit 2 comprises the one-level inverter.
Those skilled in the art understand, described P transistor npn npn during as current drain circuit 3 its operation principle identical with the operation principle of N transistor npn npn in the electrostatic damage protective device that first embodiment of the invention shown in Figure 3 provides, because described active driving circuit 2 has comprised the one-level inverter, so the voltage of active driving circuit input 21 after inverter is reverse, is input to the control end 10 of described current drain circuit.Coupling and inverter acting in opposition by electric capacity, make the voltage of the grid of described P transistor npn npn reach the required voltage (being P transistor npn npn threshold voltage) of described P transistor npn npn unlatching, open whole described P transistor npn npn, make the electrostatic induced current that appears on described first pin 7 flow to described second pin 8 by described P transistor npn npn, flow away the phenomenon of also having avoided described P transistor npn npn partly to open simultaneously again from described second pin 8.When described integrated circuit (IC) chip operate as normal, the grid voltage of described P transistor npn npn does not reach described P transistor npn npn and opens required voltage (being P transistor npn npn threshold voltage), and described P transistor npn npn is in closed condition.
Further, those skilled in the art understand, when the circuit theory diagrams that provide according to this variation example when the electrostatic damage protective device with noise immunologic function provided by the invention connected, described active driving circuit 2 also can be made up of the inverter more than or equal to one odd level; Preferably, described active driving circuit 2 is connected in series mutually by the one-level inverter and forms, and suboptimum ground, described active driving circuit 2 are connected in series mutually by three grades of inverters and form.
Those skilled in the art understand, second of first embodiment of the invention changes example and the 3rd and the active driving circuit 2 of the electrostatic damage protective device that provides in the example and current drain circuit 3 are provided also can change the technical scheme that provides in the example with reference to this and arrange and be connected, this does not influence flesh and blood of the present invention, does not repeat them here.
Fig. 8 shows the circuit theory diagrams with electrostatic damage protective device second embodiment of noise immunologic function provided by the present invention. reference diagram 8, shown in have the electrostatic damage protective device of noise immunologic function, it comprises testing circuit 1, active driving circuit 2, current drain circuit 3, exchanging bleeder circuit 4 and pin. described pin comprises that one first pin 7 and one second pin 8. described testing circuits 1 are used to detect electrostatic induced current or noise fluctuations, comprise a capacitive device 6 and a resistive device 5, described capacitive device 6 and resistive device 5 series connection mutually are connected across between two pins, particularly, in the present embodiment, one end of the capacitive device 6 of described testing circuit connects described output pin, described capacitive device 6 comprises an electric capacity, one end of the resistive device 5 of described testing circuit connects described input pin, described resistive device 5 comprises a resistance. described active driving circuit 2 is used for 3 conductings of drive current leadage circuit or closes, the input 21 of described active driving circuit is connected between the resistive device 5 and capacitive device 6 of described testing circuit, the output 22 of described active driving circuit connects the control end 10 of described current drain circuit, particularly, in the present embodiment, described active driving circuit 2 comprises the one-level inverter. described current drain circuit 3 is used to the electrostatic induced current of releasing, described current drain circuit 3 connects two pins, particularly, in the present embodiment, described current drain circuit 3 comprises a N transistor npn npn, the grid of described N transistor npn npn connects the output 22 of described active driving circuit as the control end 10 of described current drain circuit, the source electrode of N transistor npn npn is connected described second pin 8 with substrate, the drain electrode of N transistor npn npn connects described first pin, 7. described electrostatic damage protective devices and also comprises an interchange bleeder circuit 4, described interchange bleeder circuit 4 is connected across between the input 21 and the close pin of testing circuit resistive device 5 of described electrostatic damage protective device of described active driving circuit, particularly, in the present embodiment, described interchange bleeder circuit 4 comprises an electric capacity, and described interchange bleeder circuit 4 electric capacity are connected across between the input 21 and described first pin 7 of described active driving circuit.
Particularly, with reference to figure 3 and Fig. 8, in the present embodiment, different with first embodiment shown in Figure 3 is, an end of the capacitive device 6 of described testing circuit connects described second pin 8, and an end of the resistive device 5 of described testing circuit connects described first pin 7; Described active driving circuit 2 comprises the one-level inverter; Described interchange bleeder circuit 4 electric capacity are connected across between the input 21 and described first pin 7 of described active driving circuit.Those skilled in the art understand, the circuit of the electrostatic breakdown protection circuit that provides when the testing circuit 1 of described electrostatic breakdown protection circuit and active driving circuit 2 and first embodiment of the invention is connected not simultaneously, and the connected mode that exchanges bleeder circuit 4 in the present embodiment has also produced corresponding variation.Particularly, described interchange bleeder circuit 4 electric capacity are connected across between the input 21 and described first pin 7 of described active driving circuit, described electrostatic damage protective device still can be by the dividing potential drop effect that exchanges between the capacitive device 6 that exchanges bleeder circuit 4 and described testing circuit, make that only some can arrive described N transistor npn npn grid by described active driving circuit 2 in the electrostatic potential fluctuation that appears at first pin 7, and another part flows away by the electric capacity that exchanges bleeder circuit 4.
Further, in the present embodiment, described electrostatic damage protective device with noise immunologic function also can be designed to described active driving circuit 2 be connected in series mutually by three grades of inverters and form.Those skilled in the art understand, when the circuit theory diagrams that provide according to second embodiment of the invention when electrostatic damage protective device provided by the invention connected, described active driving circuit 2 also can be connected in series mutually by the inverter more than or equal to five odd level and form.Preferably, described active driving circuit 2 is made up of the one-level inverter, and suboptimum ground, described active driving circuit 2 are connected in series mutually by three grades of inverters and form, and this does not influence flesh and blood of the present invention, does not repeat them here.
Further, in the present embodiment, described electrostatic damage protective device with noise immunologic function also can be designed to the capacitive device 6 of described testing circuit be made up of a transistor.Preferably, described capacitive device 6 adopts a P transistor npn npn or a N transistor npn npn to form, and its connected mode can change the electrostatic damage protective device circuit theory diagrams that provide in the example with reference to second of first embodiment of the invention and connect.It will be appreciated by those skilled in the art that described P transistor npn npn or N transistor npn npn can also adopt other modes to connect, as long as the equivalence in described testing circuit 1 of P transistor npn npn after connecting or N transistor npn npn becomes an electric capacity.
Further, in the present embodiment, described electrostatic damage protective device with noise immunologic function also can be designed to the resistive device 5 of described testing circuit be made up of a transistor. preferably, described resistive device 5 adopts a N transistor npn npn or a P transistor npn npn, its connected mode can change the electrostatic damage protective device circuit theory diagrams that provide in the example with reference to the 3rd of first embodiment of the invention and connect. and those skilled in the art understand, described N transistor npn npn or P transistor npn npn can also adopt other modes to connect, as long as the equivalence in described testing circuit 1 of N transistor npn npn after connecting or P transistor npn npn becomes a resistance.
Further, in the present embodiment, described current drain circuit 3 with electrostatic damage protective device of noise immunologic function also can be made up of the P transistor npn npn, and described active driving circuit 2 is by forming more than or equal to the inverter of zero even level simultaneously.Particularly, its connected mode can connect with reference to the 4th circuit theory diagrams that the electrostatic damage protective device that provides in the example is provided of first embodiment of the invention, and this does not influence flesh and blood of the present invention, does not repeat them here.
Fig. 3 to Fig. 8 shows the circuit theory diagrams that have electrostatic damage protective device first embodiment and second embodiment of noise immunologic function and change example provided by the present invention, further, the interchange bleeder circuit 4 that it will be appreciated by those skilled in the art that electrostatic damage protective device provided by the present invention also can connect with reference to the circuit theory diagrams of third embodiment of the invention shown in Figure 9.With reference to figure 9, described interchange bleeder circuit 4 is made up of a transistor, preferably, comprises a N transistor npn npn, and suboptimum ground comprises a P transistor npn npn.Particularly, the N transistor npn npn of described interchange bleeder circuit 4 or the grid of P transistor npn npn connect the input 21 of described active driving circuit, the N transistor npn npn of described interchange bleeder circuit 4 or the source electrode of P transistor npn npn, drain electrode and substrate connect a described pin near testing circuit resistive device 5, particularly, in the present embodiment, source electrode, drain electrode and substrate connect described second pin 8.Those skilled in the art understand, the connection of other circuit also can be connected with the electrostatic damage protective device circuit theory diagrams that second embodiment is provided with reference to first embodiment of the invention in the present embodiment, this does not influence flesh and blood of the present invention, does not repeat them here.
Further, in the present embodiment, the N transistor npn npn of described interchange bleeder circuit 4 also can adopt grid, source electrode and the substrate with the N transistor npn npn to connect described second pin 8, the mode that the drain electrode of N transistor npn npn is connected the input 21 of described active driving circuit connects, this moment described interchange bleeder circuit 4 grid, source electrode and the substrate of N transistor npn npn and the drain electrode of N transistor npn npn can equivalence be an electric capacity.Equally, the P transistor npn npn of described interchange bleeder circuit 4 also can connect with reference to this mode.Described described N transistor npn npn or the P transistor npn npn of it will be appreciated by those skilled in the art that can also adopt other modes to connect, as long as the equivalence in described electrostatic damage protective device of N transistor npn npn after connecting or P transistor npn npn becomes an electric capacity.
Further, those skilled in the art understand, described interchange bleeder circuit 4 can also be taked other capacitive elements, as long as the interchange bleeder circuit 4 after connecting in described electrostatic damage protective device can by with the dividing potential drop effect that exchanges of the capacitive device 6 of described testing circuit, only some can arrive described N transistor npn npn grid by described active driving circuit 2 to make the electrostatic potential fluctuation that appears at first pin 7, and another part flows away and gets final product by exchanging bleeder circuit 4 electric capacity.
Fig. 3 is to embodiment illustrated in fig. 9 and change example according to the present invention, the invention provides in a kind of electrostatic damage protective device with noise immunologic function to be used for noise fluctuations is carried out dividing potential drop the control method that the shielding noise fluctuations is disturbed current drain circuit 3.Preferably include following steps:
Step a. detects electrostatic induced current or noise fluctuations by described testing circuit 1 when being subjected to electrostatic breakdown, and detected electrostatic potential information and noise voltage information are transmitted to described interchange bleeder circuit 4;
The described interchange bleeder circuit 4 of step b. is after the electrostatic potential information and noise voltage information of receiving described testing circuit 1 transmission, according to predefined capacitance ratio between the capacitive device of described interchange bleeder circuit 4 and testing circuit 1 electrostatic induced current or noise fluctuations are carried out dividing potential drop, and electrostatic potential information after the dividing potential drop and noise voltage information are transmitted to described active driving circuit 2;
The described active driving circuit 2 of step c is after the electrostatic potential information and noise voltage information of receiving described interchange bleeder circuit 4 transmission, the electrostatic induced current after the dividing potential drop or the voltage and the pre-set threshold voltage of noise fluctuations are compared, judge whether again to be subjected to electrostatic breakdown and need firing current leadage circuit 3, and give described current drain circuit 3 this judged result message transmission;
Steps d. described current drain circuit 3 is after the judged result information of receiving described active driving circuit 2 transmission, whether carry out the current drain operation according to this information decision, if this information indicates described active driving circuit 2 to carry out the current drain operation, then described active driving circuit 2 is carried out current drain work.
Those skilled in the art understand, electrostatic damage protective device with noise immunologic function provided by the invention exchanges bleeder circuit 4 by connecting, above-mentioned control method can be utilized the dividing potential drop effect of 4 pairs of noise voltages of described interchange bleeder circuit, can realize regulating in advance electrostatic damage protective device is opened described current drain circuit 3 when being subjected to the static influence of fluctuations noise threshold voltage, realize the purpose that the shielding noise disturbs current drain circuit 3.Particularly, above-mentioned control method makes that electrostatic damage protective device provided by the invention can operate as normal when being subjected to electrostatic breakdown, thereby releases the electrostatic breakdown electric current; And when being subjected to noise fluctuations and influencing, described electrostatic damage protective device can misoperation, opens thereby avoid the current drain circuit to open by mistake.
Fig. 3 is to embodiment illustrated in fig. 9 and variation example according to the present invention, a kind of integrated circuit also is provided, it comprises power pins, internal circuit and electrostatic damage protective device, particularly, the electrostatic damage protective device of this integrated circuit also comprises and is used for noise fluctuations is carried out dividing potential drop, the interchange bleeder circuit 4 that the shielding noise fluctuations is disturbed current drain circuit 3.It will be appreciated by those skilled in the art that preferably described interchange bleeder circuit 4 comprises an electric capacity, for example Fig. 3 is to electrostatic damage protective device shown in Figure 8.Suboptimum ground, described interchange bleeder circuit 4 also can comprise a transistor, for example a N transistor npn npn or a P transistor npn npn, electrostatic damage protective device as shown in Figure 9.Particularly, those skilled in the art can connect by electrostatic damage protective device extremely embodiment illustrated in fig. 9 with reference to above-mentioned Fig. 3 and that the variation example provides, do not repeat them here.
Further, it will be appreciated by those skilled in the art that integrated circuit provided by the invention can be various types of circuit, and change according to concrete enforcement needs.In other words, the scheme that the integrated circuit of electrostatic breakdown safeguard function can adopt the foregoing description to provide is provided for all.Particularly, those skilled in the art can realize such integrated circuit in conjunction with prior art and the foregoing description, variation example, do not repeat them here.
More than specific embodiments of the invention are described.It will be appreciated that the present invention is not limited to above-mentioned specific implementations, those skilled in the art can make various distortion or modification within the scope of the claims, and this does not influence flesh and blood of the present invention.
Claims (18)
1. electrostatic damage protective device with noise immunologic function, it comprises:
-pin comprises one first pin (7) and one second pin (8);
-testing circuit (1) comprises a capacitive device (6) and a resistive device (5), and described capacitive device (6) and resistive device (5) series connection mutually are connected across between two pins, are used to detect electrostatic induced current or noise fluctuations;
-active driving circuit (2), the input of described active driving circuit (21) connects between the resistive device (5) and capacitive device (6) of described testing circuit, the output of described active driving circuit (22) is connected to the control end (10) of described current drain circuit, is used for (3) conducting of Control current leadage circuit or closes;
-current drain circuit (3), described current drain circuit (3) connects two pins, is used to the electrostatic induced current of releasing;
It is characterized in that, described electrostatic damage protective device also comprises an interchange bleeder circuit (4), described interchange bleeder circuit (4) is connected across between the pin of the input (21) of described active driving circuit and a described end near testing circuit resistive device (5), realize in parallel with the resistive device (5) of described testing circuit, be used to set noise threshold, noise voltage is carried out dividing potential drop, and the shielding noise is to the interference of current drain circuit (3).
2. electrostatic damage protective device according to claim 1, it is characterized in that, the pin that one end of described interchange bleeder circuit (4) connects is described second pin (8), one end of the capacitive device of described testing circuit (6) connects described first pin (7), and an end of the resistive device of described testing circuit (5) connects described second pin (8).
3. electrostatic damage protective device according to claim 2, it is characterized in that, described current drain circuit (3) comprises a N transistor npn npn, the grid of described N transistor npn npn connects the output (22) of described active driving circuit as the control end (10) of described current drain circuit, and described active driving circuit (2) comprises that zero level or even level inverter connect mutually.
4. electrostatic damage protective device according to claim 2, it is characterized in that, described current drain circuit (3) comprises a P transistor npn npn, the grid of described P transistor npn npn connects the output (22) of described active driving circuit as the control end (10) of described current drain circuit, and described active driving circuit (2) comprises that the odd level inverter connects mutually.
5. electrostatic damage protective device according to claim 1, it is characterized in that, the pin that one end of described interchange bleeder circuit (4) connects is described first pin (7), one end of the capacitive device of described testing circuit (6) connects described second pin (8), and an end of the resistive device of described testing circuit (5) connects described first pin (7).
6. electrostatic damage protective device according to claim 5, it is characterized in that, described current drain circuit (3) comprises a N transistor npn npn, the grid of described N transistor npn npn connects the output (22) of described active driving circuit as the control end (10) of described current drain circuit, and described active driving circuit (2) comprises that the odd level inverter connects mutually.
7. electrostatic damage protective device according to claim 5, it is characterized in that, described current drain circuit (3) comprises a P transistor npn npn, the grid of described P transistor npn npn connects the output (22) of described active driving circuit as the control end (10) of described current drain circuit, and described active driving circuit (2) comprises that zero level or even level inverter connect mutually.
8. according to each described electrostatic damage protective device in the claim 1 to 7, it is characterized in that described interchange bleeder circuit (4) comprises electric capacity.
9. according to each described electrostatic damage protective device in the claim 1 to 7, it is characterized in that described interchange bleeder circuit (4) comprises N transistor npn npn or P transistor npn npn.
10. electrostatic damage protective device according to claim 9, it is characterized in that, the N transistor npn npn of described interchange bleeder circuit (4) or the grid of P transistor npn npn connect the input (21) of described active driving circuit, and the transistorized source electrode of described interchange bleeder circuit (4), drain electrode and substrate connect a described pin near testing circuit resistive device (5).
11. electrostatic damage protective device according to claim 9, it is characterized in that, the N transistor npn npn of described interchange bleeder circuit (4) or the grid of P transistor npn npn connect a described pin near testing circuit resistive device (5), and transistorized source electrode, drain electrode and the substrate of described interchange bleeder circuit (4) connects the input (21) of described active driving circuit.
12. according to each described electrostatic damage protective device in the claim 1 to 11, it is characterized in that, the capacitive device of described testing circuit (6) comprises electric capacity, and described electric capacity is connected across between the input (21) and a described close pin of testing circuit resistive device (5) of described active driving circuit.
13., it is characterized in that the capacitive device of described testing circuit (6) comprises N transistor npn npn or P transistor npn npn according to each described electrostatic damage protective device in the claim 1 to 11.
14. electrostatic damage protective device according to claim 13, it is characterized in that, the transistorized grid of described testing circuit capacitive device (6) connects the input (21) of described active driving circuit, and the described transistorized source electrode of described testing circuit capacitive device (6), drain electrode and substrate connect a described pin near testing circuit capacitive device (6).
15. electrostatic damage protective device according to claim 13, it is characterized in that, the transistorized grid of described testing circuit capacitive device (6) connects a described pin near testing circuit capacitive device (6), and transistorized source electrode, drain electrode and the substrate of described testing circuit capacitive device (6) connects the input (21) of described active driving circuit.
16., it is characterized in that the resistive device of described testing circuit (5) comprises any in the following element according to each described electrostatic damage protective device in the claim 1 to 15:
-resistance;
-N transistor npn npn, the source electrode of the N transistor npn npn of described testing circuit resistive device (5) and substrate connect a described pin near testing circuit resistive device (5), the grid of the N transistor npn npn of described testing circuit resistive device (5) connects first pin (7) of described electrostatic damage protective device, and the drain electrode of the N transistor npn npn of described testing circuit resistive device (5) connects the input (21) of described active driving circuit; And
-P transistor npn npn, the source electrode of the P transistor npn npn of described testing circuit resistive device (5) and substrate connect a described pin near testing circuit resistive device (5), the grid of the P transistor npn npn of described testing circuit resistive device (5) connects second pin (8) of described electrostatic damage protective device, and the drain electrode of the P transistor npn npn of described testing circuit resistive device (5) connects the input (21) of described active driving circuit.
17. one kind is used for noise fluctuations is carried out dividing potential drop in having the electrostatic damage protective device of noise immunologic function, the control method that the shielding noise fluctuations is disturbed current drain circuit (3), wherein said electrostatic damage protective device comprises testing circuit (1), active driving circuit (2), current drain circuit (3) and exchanges bleeder circuit (4) that wherein said control method comprises the steps:
The described testing circuit of step a. (1) detects electrostatic induced current or noise fluctuations, and detected electrostatic potential information and noise voltage information are transmitted to described interchange bleeder circuit (4);
The described interchange bleeder circuit of step b. (4) transmits electrostatic potential information and noise voltage information after receiving electrostatic potential information and noise voltage information again to described active driving circuit (2);
The described active driving circuit of step c (2) compares the electrostatic potential information received and noise voltage information and pre-set threshold magnitude of voltage, judge whether to be subjected to electrostatic breakdown and need firing current leadage circuit (3), and give described current drain circuit (3) this judged result message transmission; And
Steps d. described current drain circuit (3) is after receiving judged result information, according to this information and executing current drain work;
It is characterized in that, in step b, be included in also that described interchange bleeder circuit (4) is received after the electrostatic potential information of described testing circuit (1) transmission and the noise voltage information and with electrostatic potential information and noise voltage information before described active driving circuit (2) transmission, electrostatic induced current or noise fluctuations are carried out the operation of dividing potential drop according to predefined capacitance ratio between the capacitive device of described interchange bleeder circuit (4) and testing circuit (1).
18. an integrated circuit comprises power pins, internal circuit, it is characterized in that, also comprises according to each described electrostatic damage protective device in the claim 1 to 16.
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| Application Number | Priority Date | Filing Date | Title |
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| CN200910051383A CN101707368A (en) | 2009-05-15 | 2009-05-15 | Electrostatic damage protective device with noise immunologic function and control method thereof |
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| CN200910051383A CN101707368A (en) | 2009-05-15 | 2009-05-15 | Electrostatic damage protective device with noise immunologic function and control method thereof |
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| CN101707368A true CN101707368A (en) | 2010-05-12 |
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| CN200910051383A Pending CN101707368A (en) | 2009-05-15 | 2009-05-15 | Electrostatic damage protective device with noise immunologic function and control method thereof |
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Application publication date: 20100512 |