CN104347154A - Transparent conducting film - Google Patents
Transparent conducting film Download PDFInfo
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- CN104347154A CN104347154A CN201310328558.8A CN201310328558A CN104347154A CN 104347154 A CN104347154 A CN 104347154A CN 201310328558 A CN201310328558 A CN 201310328558A CN 104347154 A CN104347154 A CN 104347154A
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- nesa coating
- conductive layer
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Abstract
The invention provides a transparent conducting film. The transparent conducting film comprises a base or a base on which the surface is formed with a substrate layer, a conducting layer and a flexible connecting component, wherein the conducting layer is a grid-shaped conducting layer which is arranged on the base or the substrate layer, and the conducting layer stretches to a non-visual area; the flexible connecting component comprises a substrate and leading wire electrodes which are arranged on the substrate, and the electric connection of the leading wire electrodes and the conducting layer is realized as the flexible connecting component is attached to grids, which stretch to the non-visual area, of the conducting layer. According to the transparent conducting film provided by the invention, the electric connection is realized by attaching the flexible connecting component which is provided with the leading wire electrodes to the grids, which stretch to the non-visual area, of the conducting layer, and the problem in the prior art that during a one-step forming process of the leading wire electrodes and the conducting layer, the adverse situation such as short circuit and scratching can be caused due to denser grids in positions of leading wires can be solved.
Description
Technical field
The present invention relates to a kind of nesa coating, belong to electronic display technology conducting film field, particularly relate to a kind of nesa coating for touch-screen.
Background technology
Nesa coating is a kind of film having satisfactory electrical conductivity and have high transmission rate at visible light wave range.Current nesa coating has been widely used in the fields such as flat panel display, photovoltaic device, contact panel and electromagnetic shielding, has the extremely wide market space.
In the making field of touch-screen, nesa coating, as the sensing element receiving the input signals such as touch in touch-screen, is therefore the critical elements ensureing and promote touch screen performance.At present, many use ITO(tin indium oxides in touch-screen) film, the ITO layer as conductive layer is vital part in nesa coating.Although the develop rapidly that the manufacturing technology of touch-screen is at a tremendous pace, for projecting type capacitor screen, there is not too large change in the basic manufacturing process of ITO layer in recent years, inevitably needs to be formed ito film and graphical in substrate.But, indium is a kind of metal material of costliness, ito film is as conductive layer, improve the cost of touch-screen to a great extent, and ITO conductive layer is in patterning process, need by whole ito film layer by mask etch to form pattern, ito film a large amount of is like this etched, also causes serious waste and the pollution of noble metal.
On the other hand, in the making of transparent conductive film, conductive layer is completed by one-shot forming technique with the connection of lead-in wire electrode, that is: first conductive layer is extended to invisible range, then direct on the conductive layer grid of this invisible range formed lead-in wire electrode, realize conductive layer with lead-in wire electrode electrical connection.The connected mode of this conductive layer and lead-in wire electrode, can be closeer due to the grid at lead-in wire place, causes lead-in wire to occur the phenomenon such as short circuit, cut, cause fraction defective to increase.
Summary of the invention
Technical problem underlying solved by the invention, be to provide a kind of transparent conductive film, carry out laminating realize being electrically connected by the band flexible connecting members of leaded electrode and conductive layer being extended to invisible range grid, can solve prior art will go between in electrode and conductive layer one-shot forming process, due to closeer at the grid at lead-in wire place, the problem that the bad phenomenon such as short circuit, cut produces can be caused.
The invention provides a kind of nesa coating, comprising:
Substrate or surface are formed with the substrate of hypothallus;
Conductive layer, described conductive layer is the latticed conductive layer be arranged in described substrate or on described hypothallus, and extends to invisible range;
Flexible connecting members, described flexible connecting members comprises substrate and is arranged at described on-chip lead-in wire electrode, and the grid that this flexible connecting members and described conductive layer extend to invisible range is fitted and to be realized going between the electrical connection of electrode and conductive layer.
In a kind of embodiment of the present invention, the laminating that described flexible connecting members and described conductive layer extend to the grid of invisible range is fitted by conducting resinl, and wherein said conducting resinl can be anisotropic conductive etc.
In one embodiment of the invention, described substrate or described hypothallus are provided with latticed groove, and are filled with electric conducting material formation conductive layer in this latticed groove.Wherein, the bottom of described latticed groove is provided with the micro-groove that the degree of depth is 500nm ~ 1 μm, the cross section of described micro-groove can be in the shape of the letter V, W font, arc or waveform, and what described micro-groove structure can prevent electric conducting material when electric conducting material polycondensation breaks to form open circuit.Further, the width of described latticed groove is 1 μm ~ 5 μm, and the degree of depth is 2 μm ~ 6 μm, and the ratio of the degree of depth and width is greater than 1, and in the present invention program, when offering above-mentioned micro-groove, the height of described groove is interpreted as the maximum height of groove; The grid of described latticed groove is regular grid or random grid, and wherein said regular grid is square net, rectangular mesh, equality four limit row grid or regular hexagonal cell.In another embodiment of the invention, described conductive layer can also carry out graphical and form bulge-structure in described substrate or described hypothallus.
In one embodiment of the invention, described conductive layer is latticed, by filled conductive material in described groove (conduction slurries), then sinters and forms described latticed conductive layer.Further, the material of described electric conducting material comprises silver, copper or conducting polymer.
In nesa coating provided by the invention, lead-in wire electrode is first arranged on the substrate of flexible connecting members, by the combination of flexible connecting members (such as FPC connector) with conductive layer, is beneficial to the connection effect of both guarantees and the quality of conducting film.
Lead-in wire electrode used in the present invention is linear, and the live width of lead-in wire electrode is 50-200 μm, is highly 5-10 μm.Further, described lead-in wire electrode can be formed by modes such as silk screen printing, impression or inkjet printings.Wherein, described lead-in wire electrode is impress to the substrate of flexible connecting members the groove type lead-in wire electrode formed; Or for carrying out the graphically lead-in wire electrode of the bulge-structure formed on the substrate of flexible connecting members.
The material of substrate used in the present invention is thermoplastic, and described thermoplastic is Merlon, polymethyl methacrylate or PETG; The layer material of described matrix is ultraviolet cured adhesive, impression glue or Merlon.
The material of substrate used in the present invention is thermoplastic, and described thermoplastic is Merlon, polymethyl methacrylate or PETG.
The present invention has following beneficial effect compared to prior art:
1, nesa coating of the present invention can adopt the electric conducting material of relative low price, and its production cost greatly reduces for ITO conducting film.
2, transparent conductive film of the present invention, carry out laminating realize being electrically connected by the band flexible connecting members of leaded electrode and conductive layer being extended to invisible range grid, can solve prior art will go between in electrode and conductive layer one-shot forming process, due to closeer at the grid at lead-in wire place, the problem that the bad phenomenon such as short circuit, cut produces can be caused.
Accompanying drawing explanation
Fig. 1 is the nesa coating schematic cross-section of an execution mode.
Fig. 2 is the nesa coating schematic cross-section of another execution mode.
Fig. 3 (a)-Fig. 3 (b) is the nesa coating floor map of an execution mode.
Fig. 4 is the structural representation of the latticed bottom portion of groove grid of an execution mode.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
Shown in figure 1, nesa coating in the present embodiment, comprise substrate 101, hypothallus 102, conductive layer 103 and the flexible connecting members with leaded electrode 104, wherein said hypothallus 102 is located in described substrate 101, being located on described hypothallus 102 around property link 104 of described conductive layer 103 and the leaded electrode of described band.
With reference to figure 3(a)-Fig. 3 (b) and Fig. 1, described flexible connecting members 104 includes substrate and is arranged at described on-chip lead-in wire electrode, and the lead-in wire 302 that described lead-in wire electrode comprises internal wiring terminal 303 and is connected with internal wiring terminal 303, the grid 301 that described internal wiring terminal 303 and described conductive layer 103 extend to invisible range carries out laminating by anisotropic conductive and realizes being electrically connected.
In the present embodiment, hypothallus 102 is provided with the latticed groove formed by impression mode, and is that the filled with conductive material of copper is in described latticed groove by material; The width of wherein said latticed groove is 1 μm ~ 5 μm, the degree of depth is 2 μm ~ 6 μm, the ratio of the degree of depth and width is greater than 1, the grid of described latticed groove can be regular grid or random grid, and described regular grid can be square net, rectangular mesh, equality four limit row grid or regular hexagonal cell; Further, be provided with the micro-groove that the degree of depth is 500nm ~ 1 μm in the bottom of described latticed groove, described micro-groove cross section be in the shape of the letter V, W font, arc or waveform (shown in Fig. 4).
In the present embodiment, lead-in wire electrode is linear, and the live width of lead-in wire electrode is 50-200 μm, is highly 5-10 μm.It can be obtained by following manner: 1) graphical groove on substrate, is particularly provided with micro-groove in the bottom of groove, for reducing the contraction of electric conducting material when dry solidification, thus prevents electric conducting material fracture and forms open circuit; 2) utilize the modes such as blade coating filled conductive material (as silver ink) in a groove, then sinter, thus form groove type lead-in wire electrode in a groove.One-shot forming technique described above is also applicable to the formation of conductive layer, and therefore not to repeat here.
The material of the substrate used in the present embodiment is thermoplastic, as Merlon (PC), polymethyl methacrylate (PMMA) or PETG (PET); The material of described hypothallus is ultraviolet cured adhesive, impression glue or Merlon, and it can be formed in described substrate 101 by the mode such as blade coating, spraying.
In the present embodiment use the material of substrate for thermoplastic, as Merlon (PC), polymethyl methacrylate (PMMA) or PETG (PET).
The visible light transmissivity of the nesa coating that the present embodiment provides is not less than 86%.Particularly, this nesa coating can be used for the making of touch-screen.
Embodiment 2
Shown in figure 2, nesa coating in the present embodiment, comprise substrate 201, hypothallus 202, conductive layer 203 and the flexible connecting members with leaded electrode 204, wherein said hypothallus 202 is located in described substrate 201, being located on described hypothallus 202 around property link 204 of described conductive layer 203 and the leaded electrode of described band.
With reference to figure 3(a)-Fig. 3 (b) and Fig. 2, described flexible connecting members 204 includes substrate and is arranged at described on-chip lead-in wire electrode, and the lead-in wire 302 that described lead-in wire electrode comprises internal wiring terminal 303 and is connected with internal wiring terminal 303, the grid 301 that described internal wiring terminal 303 and described conductive layer 203 extend to invisible range carries out laminating by anisotropic conductive and realizes being electrically connected.
In the present embodiment, hypothallus 202 is provided with the latticed groove formed by impression mode, and is that silver-colored electric conducting material is located in described latticed groove by material; The width of wherein said latticed groove is 1 μm ~ 5 μm, the degree of depth is 2 μm ~ 6 μm, the ratio of the degree of depth and width is greater than 1, the grid of described latticed groove can be regular grid or random grid, and described regular grid can be square net, rectangular mesh, equality four limit row grid or regular hexagonal cell; Further, be provided with the micro-groove that the degree of depth is 500nm ~ 1 μm in the bottom of described latticed groove, described micro-groove cross section be in the shape of the letter V, W font, arc or waveform (shown in Fig. 4).
In the present embodiment, lead-in wire electrode is linear, and the live width of lead-in wire electrode is 50-200 μm, is highly 5-10 μm.It can be obtained by following manner: form protruding lead-in wire electrode by methods such as chemical wet etchings on the surface of substrate.Wherein, described chemical wet etching specifically can comprise: at the surface of substrate coating conductive photoreceptor material, then carry out exposure-processed by shadow shield, through etching, forms described convex type lead-in wire electrode.
The material of the substrate used in the present embodiment is thermoplastic, as Merlon (PC), polymethyl methacrylate (PMMA) or PETG (PET); The material of described hypothallus is ultraviolet cured adhesive, impression glue or Merlon, and it can be formed in described substrate 201 by the mode such as blade coating, spraying.
In the present embodiment use the material of substrate for thermoplastic, as Merlon (PC), polymethyl methacrylate (PMMA) or PETG (PET).
The visible light transmissivity of the nesa coating that the present embodiment provides is not less than 86%.Particularly, this nesa coating can be used for the making of touch-screen.
As the change of above-mentioned specific embodiments, the conductive layer in embodiment 1 and embodiment 2 also can directly be formed in substrate 101 or substrate 201, and generation type can be impression etc.Structure and the connected mode of lead-in wire electrode are then same as the previously described embodiments.
Last it is noted that above embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit; Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (12)
1. a nesa coating, is characterized in that, comprising:
Substrate or surface are formed with the substrate of hypothallus;
Conductive layer, described conductive layer is the latticed conductive layer be arranged in described substrate or on described hypothallus, and extends to invisible range;
Flexible connecting members, described flexible connecting members comprises substrate and is arranged at described on-chip lead-in wire electrode, and the grid that this flexible connecting members and described conductive layer extend to invisible range is fitted and to be realized going between the electrical connection of electrode and conductive layer.
2. nesa coating according to claim 1, is characterized in that, the laminating that described flexible connecting members and described conductive layer extend to the grid of invisible range is fitted by conducting resinl.
3. nesa coating according to claim 1, is characterized in that, described substrate or described hypothallus are provided with latticed groove, is filled with electric conducting material and forms conductive layer in this latticed groove.
4. nesa coating according to claim 3, is characterized in that, the bottom of described latticed groove is provided with the micro-groove that the degree of depth is 500nm ~ 1 μm, and the cross section of described micro-groove is in the shape of the letter V, W font, arc or waveform.
5. nesa coating according to claim 3, is characterized in that, described latticed groove is for being formed described substrate or described hypothallus impression.
6. the nesa coating according to any one of claim 3-5, is characterized in that, the width of described latticed groove is 1 μm ~ 5 μm, and the degree of depth is 2 μm ~ 6 μm, and the ratio of the degree of depth and width is greater than 1.
7. the nesa coating according to any one of claim 3-5, it is characterized in that, the grid of described latticed groove is regular grid or random grid, and wherein said regular grid is square net, rectangular mesh, equality four limit row grid or regular hexagonal cell.
8. nesa coating according to claim 1, is characterized in that, described lead-in wire electrode is linear, and the live width of lead-in wire electrode is 50-200 μm, is highly 5-10 μm.
9. the nesa coating according to claim 1 or 8, is characterized in that, described lead-in wire electrode is impress to the substrate of flexible connecting members the groove type lead-in wire electrode formed; Or for carrying out the graphically lead-in wire electrode of the bulge-structure formed on the substrate of flexible connecting members.
10. nesa coating according to claim 3, is characterized in that, the material of described electric conducting material comprises silver, copper or conducting polymer.
11. nesa coatings according to claim 1 or 3, it is characterized in that, the material of described substrate is thermoplastic, and described thermoplastic is Merlon, polymethyl methacrylate or PETG; The material of described hypothallus is ultraviolet cured adhesive, impression glue or Merlon.
12. nesa coatings according to claim 1, is characterized in that, the material of described substrate is thermoplastic, and described thermoplastic is Merlon, polymethyl methacrylate or PETG.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310328558.8A CN104347154B (en) | 2013-07-31 | 2013-07-31 | A kind of nesa coating |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310328558.8A CN104347154B (en) | 2013-07-31 | 2013-07-31 | A kind of nesa coating |
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| CN104347154A true CN104347154A (en) | 2015-02-11 |
| CN104347154B CN104347154B (en) | 2017-11-03 |
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| CN201310328558.8A Active CN104347154B (en) | 2013-07-31 | 2013-07-31 | A kind of nesa coating |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106218880A (en) * | 2016-08-30 | 2016-12-14 | 成都创客空间科技有限公司 | A kind of aircraft containing macromolecule conducting material |
| CN113572872A (en) * | 2021-07-13 | 2021-10-29 | 荣耀终端有限公司 | Transmission assembly and foldable electronic equipment |
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| JP2003331654A (en) * | 2002-05-08 | 2003-11-21 | Toppan Printing Co Ltd | Conductive film and method of manufacturing same |
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| CN103165226A (en) * | 2013-03-28 | 2013-06-19 | 南昌欧菲光科技有限公司 | Transparent conductive film and preparation method thereof |
| CN203376990U (en) * | 2013-07-31 | 2014-01-01 | 南昌欧菲光科技有限公司 | Transparent conductive film |
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Patent Citations (8)
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| CN1152721A (en) * | 1995-01-13 | 1997-06-25 | 精工爱普生株式会社 | Liquid crystal display and making method |
| JP2003331654A (en) * | 2002-05-08 | 2003-11-21 | Toppan Printing Co Ltd | Conductive film and method of manufacturing same |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106218880A (en) * | 2016-08-30 | 2016-12-14 | 成都创客空间科技有限公司 | A kind of aircraft containing macromolecule conducting material |
| CN113572872A (en) * | 2021-07-13 | 2021-10-29 | 荣耀终端有限公司 | Transmission assembly and foldable electronic equipment |
| CN113572872B (en) * | 2021-07-13 | 2022-11-22 | 荣耀终端有限公司 | Transmission assembly and foldable electronic equipment |
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| Publication number | Publication date |
|---|---|
| CN104347154B (en) | 2017-11-03 |
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Effective date of registration: 20180927 Address after: 330000 room 1408, red Gucheng tower, 545 Exhibition Road, Nanchang, Jiangxi. Patentee after: Nanchang Institute of virtual reality Limited by Share Ltd Address before: 330013 Jiangxi, Nanchang, Chang Bei Economic Development Zone Huang Jia Hu Road, Ophelia Light Technology Park Co-patentee before: Shenzhen OFilm Tech Co.,Ltd. Patentee before: Nanchang OFilm Tech. Co.,Ltd. Co-patentee before: Suzhou OFilm Tech. Co.,Ltd. |
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