CN104345571B - The imaging of alignment mark and measurement apparatus, lithographic equipment - Google Patents
The imaging of alignment mark and measurement apparatus, lithographic equipment Download PDFInfo
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- CN104345571B CN104345571B CN201310315310.8A CN201310315310A CN104345571B CN 104345571 B CN104345571 B CN 104345571B CN 201310315310 A CN201310315310 A CN 201310315310A CN 104345571 B CN104345571 B CN 104345571B
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Abstract
The imaging of a kind of alignment mark and measurement apparatus, exposure device, imaging and the measurement apparatus of alignment mark include: coherent source, is used for producing irradiation light；Polarization beam apparatus, the irradiation luminous reflectance launched by coherent source forms horizontal linear polarization light；Quarter wave plate, is converted into circularly polarized light by incident horizontal linear polarization light；First convex lens unit, focuses on alignment mark surface by circularly polarized light, and circularly polarized light occurs reflection and diffraction on alignment mark surface, forms zeroth order light and diffraction light, zeroth order light and diffraction light by the first convex lens unit, quarter wave plate, polarizing beamsplitter；Second convex lens unit, the zeroth order light and the diffraction light that will transmit through polarization beam apparatus focus on image-generating unit；Phase-shift unit, the phase transition of the zeroth order light that will transmit through the second convex lens unit is and the diffraction light same phase through the second convex lens unit；Filter unit, decay is through the intensity of the zeroth order light of phase-shift unit.The imaging of alignment mark and the precision of the alignment of measurement apparatus and efficiency are high.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly to imaging, the measurement apparatus of a kind of alignment mark
And lithographic equipment.
Background technology
Photoetching is the main technique of production of integrated circuits, and the task of photoetching process is to realize the figure on mask plate
The transfer of shape photoresist layer on silicon chip.
Existing photoetching process is carried out generally by lithographic equipment, with reference to Fig. 1, existing lithographic equipment one
As include: wafer stage 101, be used for loading wafer 106；Mask plate object stage 107, is positioned at wafer
Above object stage 101, it is used for loading mask plate 108；Light source 109, is positioned on mask plate object stage 107
Side, is used for providing exposure light；Optical projection unit 104, is positioned at mask plate object stage 107 and wafer
Between thing platform 101, project wafer 106 for will transmit through the light of mask plate 108.
When prior art is to the exposure of wafer 106, it is necessary first to the region on wafer is divided into one one
Individual exposure region, is then exposed successively to each exposure region.In order to be able to realize accurate to wafer
Exposure, obtained the exposure region on wafer 106(or wafer before being exposed wafer) relative to covering
The precise position information of film version 108 is very important, and existing lithographic equipment is by alignment (alignment)
The step for set up the position relationship between wafer stage, wafer and mask plate.This alignment includes wafer
Object stage alignment, mask plate alignment and wafer alignment, wherein, wafer stage alignment can obtain wafer
Object stage positional information in coordinate system, mask plate alignment can obtain mask plate relative to wafer loading
The positional information of platform, wafer alignment can obtain the wafer positional information relative to wafer stage, pass through
Wafer can be set up relative to mask plate and crystalline substance after wafer stage alignment, mask plate alignment and wafer alignment
The positional information of circle object stage.
When carrying out wafer alignment, it is necessary first to form alignment mark on wafer, it is then aligned with labelling inspection
Alignment mark on examining system detection wafer, when obtaining on the image sensor in alignment mark detection system
During alignment mark, i.e. complete the alignment procedures of wafer.
The existing alignment mark formed on wafer is typically the protruding and periodic pattern of groove, ginseng
Examining the structural representation that Fig. 2 is a kind of alignment mark, alignment mark 201 is positioned in Semiconductor substrate 200,
Alignment mark 201 includes some discrete projections 21 and the groove 22 between adjacent protrusion 21.?
During detection alignment mark, being first illuminated alignment mark, there is diffraction in illumination light at alignment mark,
Diffraction light is imaged on the image sensor of alignment mark detection system, then accepts on image sensor
Image process, it is achieved the identification of alignment mark.
But prior art is when detecting alignment mark, can be frequently encountered by and can't detect alignment mark or alignment
Failed problem, wafer alignment inefficient.
Summary of the invention
The problem that the present invention solves is how to improve the efficiency of wafer alignment.
For solving the problems referred to above, the present invention provides imaging and the measurement apparatus of a kind of alignment mark, including:
The first convex lens unit of being sequentially distributed from top to bottom, quarter wave plate, polarization beam apparatus, the second convex lens unit,
Phase-shift unit, filter unit, image-generating unit, and it is positioned at the coherent source of polarization beam apparatus side, its
In: coherent source, it is used for producing irradiation light；Polarization beam apparatus, the irradiation light launched by coherent source is anti-
Penetrate formation horizontal linear polarization light；Quarter wave plate, for being converted into circularly polarized light by incident horizontal linear polarization light；
First convex lens unit, for circularly polarized light is focused on alignment mark surface, circularly polarized light is at alignment mark
There is reflection and diffraction in surface, forms zeroth order light and diffraction light, zeroth order light and diffraction light by the first convex lens
Zeroth order light and the diffraction light of vertical polarization it is converted into, the zeroth order light of vertical polarization and spreading out after unit and quarter wave plate
Penetrate light transmission polarization beam apparatus；Second convex lens unit, for will transmit through the zeroth order light of polarization beam apparatus and spreading out
Penetrate light to focus on image-generating unit；Phase-shift unit, for will transmit through the phase of the zeroth order light of the second convex lens unit
Position is changed into and the diffraction light same phase through the second convex lens unit；Filter unit, for decay through phase
Move the intensity of the zeroth order light of unit.
Optionally, described coherent source is ring-type LASER Light Source.
Optionally, described LASER Light Source produces wavelength 532 nanometer continuous laser.
Optionally, described phase-shift unit is positive and negative 90 ° of phase-shift units.
Optionally, described phase-shift unit includes phase-shifted region and transparent area, and diffraction light is from the printing opacity of phase-shift unit
District passes through, and zeroth order light passes through from the phase-shifted region of phase-shift unit, zeroth order light by its phase place after phase-shifted region with spread out
The phase place penetrating light is identical.
Optionally, the intensity of the zeroth order light after filter unit is decayed is equal with the intensity of diffraction light.
Optionally, described filter unit includes filter area and transparent area, and diffraction light is from the printing opacity of filter unit
District passes through, and zeroth order light passes through from the filter area of filter unit, and zeroth order light is declined by its intensity after filter area
Subtract.
Optionally, described filter area is 10%～99% to the attenuation amplitude of the intensity of zeroth order light.
Optionally, the angle of the incident direction and polarization beam apparatus of irradiating light that described coherent source produces is
45°。
Optionally, the opposite side of described polarization beam apparatus also has light refuse bin, and light refuse bin is with described
Coherent source is the most right, and described smooth refuse bin is for absorbing the irradiation light after part passes through polarization beam apparatus.
Present invention also offers a kind of imaging with above-mentioned alignment mark and the lithographic equipment of measurement apparatus.
Compared with prior art, technical scheme has the advantage that
The imaging of the alignment mark of the present invention and measurement apparatus include phase-shift unit and filter unit, phase shift list
The phase transition of unit's zeroth order light for will transmit through the second convex lens unit is and spreading out through the second convex lens unit
Penetrating light same phase, filter unit passes through the intensity of the zeroth order light of phase-shift unit for decay so that after decay
The light intensity of zeroth order light equal or close with the light intensity of diffraction light, finally phase place is converted and after strength retrogression
Zeroth order light superpose with diffraction light and be imaged on image-generating unit simultaneously.The diffraction light produced due to alignment mark
The intensity of intensity zeroth order to be much smaller than light, and diffraction light occupies at the step appearance of reflection alignment mark
Mastery reaction, if directly superpositions both will, diffraction light can be the least at the proportion of whole smooth persistent erection of the penis,
The contrast that can make the image formed declines, therefore the imaging of the alignment mark of the present invention and measurement apparatus,
By the combination of phase-shift unit Yu filter unit, the phase place of zeroth order light is being converted into and diffraction light same phase
After, in addition it is also necessary to the light intensity of zeroth order light is decayed so that the light intensity of the zeroth order light after decay and diffraction light
Light intensity equal or close, when zeroth order light after decay superposes on image-generating unit with diffraction light, both made
Light intensity strengthens on the whole, adds again the contrast of alignment mark image, it is thus possible to know fast and accurately
Other alignment mark, improves precision and the efficiency of wafer alignment.
It addition, the coherent source that light source of the present invention uses, the irradiation light that coherent source produces is compared to non-phase
The irradiation light that dry light source produces has narrower bandwidth, uses the irradiation light that coherent source produces to fiducial mark
Relative phase when note is irradiated, between diffraction light and the zeroth order light of the different diffraction level that alignment mark produces
Position is stable, so can be easy to be modulated their relative phase by phase-shift unit so that no
Diffraction light with the order of diffraction is identical with the phase place of zeroth order light, thus the change of phase place is changed into by interference
The observable intensity variation of human eye so that be imaged on the contrast of the image of alignment mark on image-generating unit
Increase, be conducive to the identification to alignment mark.
Further, the irradiation light that coherent source produces is that ring-type, ring-type irradiation light is irradiating alignment mark
Time, the zeroth order light that alignment mark reflection produces also is ring-type, the follow-up modulation (phase place to zeroth order light
Conversion or light intensity attenuation) time, only need to process for the annular section in light path, without to light path
On alignment mark produce high-order diffraction light produce impact.
Accompanying drawing explanation
Fig. 1 is the structural representation of the lithographic equipment of prior art；
Fig. 2 is the structural representation of the alignment mark of prior art；
Fig. 3 is imaging and the structural representation of measurement apparatus of embodiment of the present invention alignment mark.
Detailed description of the invention
The detection to the alignment mark on wafer of the alignment mark detection system of existing lithographic equipment, generally
Being the diffraction light by receiving alignment mark, diffraction light is imaged on the graphical sensory of alignment mark detection system
On device, then the image accepted on image sensor is processed, it is achieved the identification of alignment mark.By
This is visible, and the intensity of the diffraction light of alignment mark is very important to the identification of alignment mark.But,
Along with the continuous reduction of device size, the thickness of alignment mark is more and more thinner, and alignment mark itself also becomes
More and more transparent so that the projection of alignment mark and the contrast of groove and alignment mark and Jie of surrounding
Contrast between matter layer is more and more less, when alignment mark is illuminated, and alignment mark diffraction efficiency
The most constantly reduce with the light intensity of diffraction light, thus the contrast of the image formed on image sensor decline,
Alignment mark is difficult to, causes the failure of wafer alignment, wafer alignment inefficient.
The invention provides imaging and the measurement apparatus of a kind of alignment mark, by the reflection light of alignment mark and
Diffraction light is simultaneously used for imaging, on image-generating unit before imaging, to reflection light carry out phase place conversion and
The decay of intensity, phase place convert after reflection light phase place is identical with the phase place of diffraction light, after strength retrogression
Reflection light intensity equal or close with the intensity of diffraction light, by phase place convert with strength retrogression after anti-
Penetrate light and be imaged on image-generating unit with diffraction light simultaneously, thus add the contrast of the image that alignment mark is formed
Degree, it is easy to the identification of alignment mark, improves success rate and the precision of wafer alignment.
Understandable, below in conjunction with the accompanying drawings for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from
It is embodied as being described in detail to the present invention.When describing the embodiment of the present invention in detail, for purposes of illustration only,
Schematic diagram can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, and it should not at this
Limit the scope of the invention.Additionally, the three of length, width and the degree of depth should be comprised in actual fabrication
Dimension space size.
Fig. 3 is imaging and the structural representation of measurement apparatus of embodiment of the present invention alignment mark.
With reference to Fig. 3, imaging and the measurement apparatus of described alignment mark include: the be sequentially distributed from top to bottom
One convex lens unit 304, quarter wave plate 303, polarization beam apparatus the 302, second convex lens unit 306, phase shift list
Unit 307, filter unit 308, image-generating unit 309, and it is positioned at the relevant of polarization beam apparatus 302 side
Light source 301, wherein:
Coherent source 301, is used for producing irradiation light；
Polarization beam apparatus 302, the irradiation luminous reflectance launched by coherent source 301 forms horizontal linear polarization light
32；
Quarter wave plate 303, for being converted into circularly polarized light 32 by incident horizontal linear polarization light 32；
First convex lens unit 304, for focusing on alignment mark 305 surface, circularly polarized light by circularly polarized light
There is reflection and diffraction on alignment mark 305 surface, form zeroth order light 34 and diffraction light (or high order diffraction
Light) 35, zeroth order light 34 and diffraction light 35 are by converting after the first convex lens unit 304 and quarter wave plate 303
For zeroth order light and the diffraction light of vertical polarization, the zeroth order light of vertical polarization and diffraction light through polarization beam apparatus
302；
Second convex lens unit 306, for will transmit through zeroth order light 34 and the diffraction light 35 of polarization beam apparatus 302
Focus on image-generating unit 309；
Phase-shift unit 307, the phase transition of the zeroth order light 34 for will transmit through the second convex lens unit 306 is
With diffraction light 35 same phase through the second convex lens unit 306；
Filter unit 308, passes through the intensity of the zeroth order light 35 of phase-shift unit 307 for decay.
Concrete, described coherent source 301 is ring-type LASER Light Source.Described coherent source 301 includes
Light source, barrier plate 30, barrier plate 30 has opening or the transmission region of annular, and the light that light source produces leads to
Ring-type irradiation light 31 is formed after crossing the opening on barrier plate 30 or transmission region.In the present embodiment, described
LASER Light Source produces the continuous laser that wavelength is 532 nanometers.In other embodiments of the invention, described
LASER Light Source can also produce the laser that wavelength is other numerical value.
The embodiment of the present invention uses coherent source 301, and the irradiation light that coherent source 301 produces is compared to non-phase
The irradiation light that dry light source produces has narrower bandwidth, uses the irradiation light that coherent source 301 produces to right
When fiducial mark note is irradiated, the phase between diffraction light and the zeroth order light of the different diffraction level that alignment mark produces
To phase stabilization, so can be easy to by phase-shift unit 307, their relative phase is modulated,
The diffraction light making different diffraction level is identical with the phase place of zeroth order light, thus by the change of phase place by interfering
It is changed into the observable intensity variation of human eye so that be imaged on the image of alignment mark on image-generating unit
Contrast increases, and is conducive to the identification to alignment mark.
The irradiation light 31 that coherent source 301 in the embodiment of the present invention produces is ring-type, ring-type irradiation light
When irradiating alignment mark, the zeroth order light that alignment mark reflection produces also is ring-type, follow-up to zeroth order
During modulation (phase transition or the light intensity attenuation) of light, only need to process for the annular section in light path,
Without the diffraction light of the high-order that the alignment mark in light path produces is produced impact.
The irradiation light that coherent source 301 produces is line polarized light, and described line polarized light has horizontal state of polarization
And perpendicular polarisation state.The incident direction of the irradiation light that described coherent source 301 produces and polarization beam apparatus 302
Angle be 45 °.
Polarization beam apparatus 302 is for by the light separation of different direction of vibration, the photograph that coherent source 301 produces
Penetrating light 31 when being radiated at polarization beam apparatus 302, polarization beam apparatus 302 will irradiate horizontal state of polarization in light
Separating with perpendicular polarisation state, wherein the light of horizontal state of polarization is reflected by polarization beam apparatus 302, forms level
The line polarized light that the direction of vibration of line polarized light 32(light is vertical with the plane of incidence), the light of perpendicular polarisation state is then
Through polarization beam apparatus 302, (line that the direction of vibration of light is parallel with the plane of incidence is inclined to form perpendicular linear polarization light
Shake light).
The opposite side of described polarization beam apparatus 302 also has light refuse bin (not shown), and light rubbish
Case is the most right with described coherent source 301, and described smooth refuse bin is used for absorbing part through after polarization beam apparatus
Irradiation light (irradiate light when being radiated at polarization beam apparatus 302, vertical through polarization beam apparatus 302
Line polarized light), thus prevent perpendicular linear polarization light from producing reflection or diffraction in other parts of lithographic equipment,
Thus the imaging of alignment mark and the light path of measurement apparatus are produced impact.
In the embodiment of the present invention, use horizontal linear polarization light 32 that the alignment mark 305 on wafer is shone
Bright, horizontal linear polarization light 32 is after quarter wave plate 303, and horizontal linear polarization light 32 can be changed into circular polarization
Light 33, circularly polarized light 33 is left circularly polarized light, and circularly polarized light 33 gathers through the first convex lens unit 304
Burnt on alignment mark 305, at alignment mark 305, reflect to form zeroth order light 34(zeroth order light 34
Symmetrical on optical axis AB both sides with corresponding incident circularly polarized light 33), and send out at alignment mark 305
Gain interest and penetrate formation diffraction light (or high order diffraction light) 35, zero order light 34 and the circle that diffraction light 35 is dextrorotation
Polarized light, zero order light 34 and diffraction light 35, after quarter wave plate 303, are become from the circularly polarized light of dextrorotation
Vertical line polarized light, the zero order light 34 of perpendicular linear polarization and diffraction light 35 are through polarization beam apparatus 302
Time, whole the transmitting through polarization beam apparatus 302 of energy, anti-without producing on polarization beam apparatus 302
Penetrate, so that the light intensity of zero order light 34 and diffraction light 35 will not produce loss, follow-up reimaging unit
During upper imaging, add the contrast of alignment mark image.
Quarter wave plate 303 uses calcite or quartz to make.
Described second convex lens unit 306 is made up of convex lens and/or other optical element, the second convex lens list
Unit 306 is for focusing on the circularly polarized light 33 formed after quarter wave plate 303 at alignment mark 305.
Described second convex lens unit 306 is made up of convex lens and/or other optical element, the second convex lens list
After unit 306 is used for will transmit through polarization beam apparatus 302, zeroth order light 34 and diffraction light 35 focus on image-generating unit
On 309.
In light path between described second convex lens unit 306 and image-generating unit 309, also there is phase-shift unit 307
With filter unit 308.
Described phase-shift unit 307 is for will transmit through the phase transition of the zeroth order light 34 of the second convex lens unit 306
For with diffraction light 35 same phase through the second convex lens unit 306.The zeroth order formed at alignment mark 305
The phase place of light 34 and diffraction light 35 differs, by phase-shift unit 307 by the phase place of zeroth order light 34
It is changed into and diffraction light 35 same phase, when image-generating unit imaging, it is possible to achieve diffraction light and zeroth order light light
Strong superposition, thus enhance the size of light intensity, improve the contrast of image.
Described phase-shift unit 307 includes phase-shifted region 36 and transparent area 37, and diffraction light 35 is from phase-shift unit 307
Transparent area 307 pass through, zeroth order light 34 passes through from the phase-shifted region 36 of phase-shift unit 307, zeroth order light 34
Identical with the phase place of diffraction light 35 by its phase place after phase-shifted region 36, so that diffraction light 35 and zeroth order
Light 34 keeps consistent by the phase place after phase-shift unit 307.
The shapes and sizes of described phase-shifted region 306 and the zeroth order light after the second convex lens unit 306 converges
On phase-shift unit 307, the shapes and sizes of projected area are consistent, in the present embodiment, and described phase-shifted region 36
Be shaped as annulus, ring-type zeroth order light 34 is converted into by the phase place after ring-type phase-shifted region 36 and spreads out
The phase place penetrating light 35 is identical.Diffraction light 35, will not be right through district 37 directly by transmitting through district 37
The intensity of diffraction light 35 and phase place produce impact.Described phase-shifted region 36 is to the phase place size of zeroth order light 34
Regulation is adjustable, and its range of accommodation is positive 90 °～negative 90 °.
In the present embodiment, described phase-shift unit 307 is positive and negative 90 ° of phase-shift units, it is achieved to zeroth order light 34
Phase place carry out the phase shift regulation of positive 90 ° or negative 90 °.
Described filter unit 308, for decay through the intensity of the zeroth order light 34 of phase-shift unit 307, makes
The light intensity of the zeroth order light after must decaying is equal or close with the light intensity of diffraction light.Owing to alignment mark 305 produces
The intensity of intensity zeroth order the to be much smaller than light 34 of raw diffraction light 35, and diffraction light 35 is reflecting fiducial mark
The step appearance of note is again in occupation of mastery reaction, if directly superpositions both will, diffraction light 35 is at whole light
The proportion of persistent erection of the penis can be the least, the contrast of the image formed can be made to decline, the therefore embodiment of the present invention
The imaging of alignment mark and measurement apparatus, by the combination of phase-shift unit 307 with filter unit 308,
The phase place of zeroth order light 34 is converted into diffraction light 35 same phase after, in addition it is also necessary to the light to zeroth order light 34
Decay by force so that the light intensity of the zeroth order light after decay is equal or close with the light intensity of diffraction light 35, declines
When zeroth order light after subtracting superposes on image-generating unit with diffraction light 35, light intensity had both been made to strengthen on the whole, again
Add the contrast of alignment mark image, it is thus possible to identify alignment mark fast and accurately, improve
The precision of wafer alignment and efficiency.
Described filter unit 308 includes filter area 39 and transparent area 38, and diffraction light 35 is from filter unit 308
Transparent area 38 pass through, zeroth order light 34 passes through from the filter area 39 of filter unit 308, zeroth order light 34
It is attenuated by its intensity after filter area 39.Diffraction light 35 is leading to from the transparent area 38 of filter unit 308
Later, its intensity and phase place will not change.The shapes and sizes of described filter area 39 with through second
Zeroth order light shapes and sizes of projected area on filter unit 308 after convex lens unit 306 converges are consistent,
In the present embodiment, described filter area 39 be shaped as annulus, ring-type zeroth order light 34 is by ring-type filter
Behind light district 39, its intensity is attenuated.
Described filter area 39 is adjustable to the amplitude of the decay of zeroth order light 34, and described filter area 39 is to zero
The attenuation amplitude of the intensity of rank light is 10%～99%.
In the present embodiment, first zeroth order light 34 is carried out the conversion of phase place, the most again to zero after phase transition
Rank light carries out the decay of intensity, and the phase place brought after preventing from first carrying out the decay of intensity can not accurately be changed
Problem.
Described image-generating unit 309 is at least by charge coupled cell (Charge-coupled Device, CCD)
Or cmos sensor is constituted, and image-generating unit 309 is used for converting optical signals into the signal of telecommunication, and right
The signal of telecommunication is amplified processing with analog digital conversion etc., it is achieved the acquisition of image, store, transmit, process and
Reproduction.
In the imaging of above-mentioned alignment mark and measurement apparatus, the concrete process of optic path is: the most relevant
Light source 301 is opened, and produces and irradiates light 31；Irradiate light 31 when being radiated at polarization beam apparatus 302, level
The light of polarization state is reflected by polarization beam apparatus 302, forms horizontal linear polarization light 32；Horizontal linear polarization light 32
After quarter wave plate 303, horizontal linear polarization light 32 can be changed into circularly polarized light 33, circularly polarized light 33
For left circularly polarized light, circularly polarized light 33 focuses on alignment mark 305 through the first convex lens unit 304,
At alignment mark 305, reflect to form zeroth order light 34, and diffraction shape occurs at alignment mark 305
Become diffraction light (or high order diffraction light) 35, zero order light 34 and the circularly polarized light that diffraction light 35 is dextrorotation；
Zero order light 34 forms parallel zero order light 34 and diffraction light with diffraction light 35 through the first lens unit 304
35；Parallel zero order light 34 and diffraction light 35 are after quarter wave plate 303, by the circularly polarized light of dextrorotation
Become vertical line polarized light；The zero order light 34 of perpendicular linear polarization and diffraction light 35 are through polarization beam apparatus
302 transmission；Second lens unit 306 converges the zero order light 34 through polarization beam apparatus 302 and diffraction light
35；The phase transition of the zeroth order light 34 after the second lens unit 306 is and spreads out by phase-shift unit 307
Penetrate light identical；Filter unit 308 carries out the decay of intensity to the zeroth order light 34 after phase-shift unit 307；
Finally, the zeroth order light after diffraction light 35 and phase transition and strength retrogression focuses at image-generating unit 309.
In another embodiment of the invention, described second convex lens unit, phase-shift unit and filter unit are also
Can be other arrangement mode, arrangement from top to bottom be: polarization beam apparatus, phase-shift unit, optical filtering
Unit, the second convex lens unit, image-generating unit, the most described phase-shift unit and filter unit are positioned at polarization beam splitting
Between device and image-generating unit, thus after to the phase transition of zeroth order light and strength retrogression, convex by second
Mirror unit focuses on image-generating unit, in this arrangement mode, the shape of the phase-shifted region of phase-shift unit and
The shapes and sizes of the filter area of size and filter unit are all the shapes irradiating light sent with coherent source
Shape is identical with size, so that the regulation of phase-shift unit and the making of filter unit and position is the simplest
Just.The specific descriptions of phase-shift unit and filter unit function and relevant light paths refer to previous embodiment.
The embodiment of the present invention additionally provides a kind of imaging with above-mentioned alignment mark and the photoetching of measurement apparatus
Device, when carrying out the exposure technology of photoetching, uses imaging and the measurement apparatus detection of above-mentioned alignment mark
Alignment mark on wafer, it is achieved the alignment of wafer.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, all can make various changes or modifications, therefore the guarantor of the present invention
The scope of protecting should be as the criterion with claim limited range.
Claims (11)
1. the measurement apparatus of an alignment mark, it is characterised in that including: first be sequentially distributed from top to bottom
Convex lens unit, quarter wave plate, polarization beam apparatus, the second convex lens unit, phase-shift unit, filter unit,
Image-generating unit, and it is positioned at the coherent source of polarization beam apparatus side, wherein:
Coherent source, is used for producing irradiation light；
Polarization beam apparatus, the irradiation luminous reflectance launched by coherent source forms horizontal linear polarization light；
Quarter wave plate, for being converted into circularly polarized light by incident horizontal linear polarization light；
First convex lens unit, for circularly polarized light is focused on alignment mark surface, circularly polarized light is to fiducial mark
There is reflection and diffraction in note surface, forms zeroth order light and diffraction light, zeroth order light and diffraction light convex by first
Be converted into zeroth order light and the diffraction light of vertical polarization after mirror unit and quarter wave plate, the zeroth order light of vertical polarization and
Diffraction light passes through polarization beam apparatus；
Second convex lens unit, focuses on image-generating unit for the zeroth order light and diffraction light that will transmit through polarization beam apparatus
On；
Phase-shift unit, for will transmit through the phase transition of the zeroth order light of the second convex lens unit for convex with through second
The diffraction light same phase of mirror unit；
Filter unit, passes through the intensity of the zeroth order light of phase-shift unit for decay.
2. the measurement apparatus of alignment mark as claimed in claim 1, it is characterised in that described coherent source is
Ring-type LASER Light Source.
3. the measurement apparatus of alignment mark as claimed in claim 2, it is characterised in that described LASER Light Source produces
Raw wavelength 532 nanometer continuous laser.
4. the measurement apparatus of alignment mark as claimed in claim 1, it is characterised in that described phase-shift unit is
Positive and negative 90 ° of phase-shift units.
5. the measurement apparatus of alignment mark as claimed in claim 4, it is characterised in that described phase-shift unit bag
Including phase-shifted region and transparent area, diffraction light passes through from the transparent area of phase-shift unit, and zeroth order light is from phase-shift unit
Phase-shifted region pass through, zeroth order light is identical with the phase place of diffraction light by its phase place after phase-shifted region.
6. the measurement apparatus of alignment mark as claimed in claim 1, it is characterised in that decline through filter unit
The intensity of the zeroth order light after subtracting is equal with the intensity of diffraction light.
7. the measurement apparatus of alignment mark as claimed in claim 1, it is characterised in that described filter unit bag
Including filter area and transparent area, diffraction light passes through from the transparent area of filter unit, and zeroth order light is from filter unit
Filter area pass through, zeroth order light is attenuated by its intensity after filter area.
8. the measurement apparatus of alignment mark as claimed in claim 7, it is characterised in that described filter area is to zero
The attenuation amplitude of the intensity of rank light is 10%～99%.
9. the measurement apparatus of alignment mark as claimed in claim 1, it is characterised in that described coherent source produces
The raw incident direction of light of irradiating is 45 ° with the angle of polarization beam apparatus.
10. the measurement apparatus of alignment mark as claimed in claim 1, it is characterised in that described polarization beam apparatus
Opposite side also there is light refuse bin, and light refuse bin is the most right with described coherent source, described smooth rubbish
Case is for absorbing the irradiation light after part passes through polarization beam apparatus.
The light of the measurement apparatus of 11. 1 kinds of alignment marks having described in claim 1～any one of claim 10
Engraving device.
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