CN104345571A - Alignment mark imaging and measuring apparatus, and lithography apparatus - Google Patents
Alignment mark imaging and measuring apparatus, and lithography apparatus Download PDFInfo
- Publication number
- CN104345571A CN104345571A CN201310315310.8A CN201310315310A CN104345571A CN 104345571 A CN104345571 A CN 104345571A CN 201310315310 A CN201310315310 A CN 201310315310A CN 104345571 A CN104345571 A CN 104345571A
- Authority
- CN
- China
- Prior art keywords
- light
- alignment mark
- phase
- zeroth order
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention relates to an alignment mark imaging and measuring apparatus, and a lithography apparatus. The alignment mark imaging and measuring apparatus comprises: a coherent light source for generating irradiation light; a polarization beam splitter for reflecting the irradiation light emitted by the coherent light source to form horizontal linear polarization light; a 1/4 wave plate for converting the incident horizontal linear polarization light into circular polarization light; a first convex lens unit for focusing the circular polarization light on the surface of an alignment mark, wherein the circular polarization light is reflected and diffracted on the surface of the alignment mark to form zero order light and diffraction light, and the zero order light and the diffraction light are transmitted through the first convex lens unit, the 1/4 wave plate and the polarization beam splitter; a second convex lens unit for focusing the zero order light and the diffraction light permeating the second convex lens unit to an imaging unit; a phase shift unit for converting the phase of the zero order light of the second convex lens unit to a phase same to the phase of the diffraction light permeating the second convex lens unit; and a light filtering unit for attenuating the intensity of the zero order light permeating the phase shift unit. The alignment precision and the alignment efficiency of the alignment mark imaging and measuring apparatus are high.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of imaging of alignment mark, measurement mechanism and lithographic equipment.
Background technology
Photoetching is the main technique of production of integrated circuits, and the task of photoetching process realizes the transfer of the figure on mask plate to the photoresist layer on silicon chip.
Existing photoetching process is generally undertaken by lithographic equipment, and with reference to figure 1, existing lithographic equipment generally comprises: wafer stage 101, for loading wafer 106; Mask plate objective table 107, is positioned at above wafer stage 101, for loading mask plate 108; Light source 109, is positioned at above mask plate objective table 107, for providing exposure light; Optical projection unit 104, between mask plate objective table 107 and wafer stage 101, for projecting wafer 106 by the light through mask plate 108.
During the exposure of prior art to wafer 106, first need to be exposure region one by one by the Region dividing on wafer, then each exposure region is exposed successively.In order to the Correct exposure to wafer can be realized, the exposure region on wafer 106(or wafer was obtained before wafer is exposed) be very important relative to the precise position information of mask plate 108, existing lithographic equipment sets up wafer stage, position relationship between wafer and mask plate by aiming at (alignment) this step.This aligning comprises wafer stage aligning, mask plate is aimed at and wafer alignment, wherein, wafer stage is aimed at can obtain the positional information of wafer stage in coordinate system, mask plate is aimed at and can be obtained mask plate and can obtain the positional information of wafer relative to wafer stage relative to the positional information of wafer stage, wafer alignment, is aimed at, mask plate aims at and can set up after wafer alignment the positional information of wafer relative to mask plate and wafer stage by wafer stage.
When carrying out wafer alignment, first needing to form alignment mark on wafer, the alignment mark then on alignment mark detection systems axiol-ogy wafer, when the image sensor in alignment mark detection system obtains alignment mark, namely completing the alignment procedures of wafer.
The existing alignment mark formed on wafer is generally the periodic pattern with protruding and groove, with reference to the structural representation that figure 2 is a kind of alignment mark, alignment mark 201 is positioned in Semiconductor substrate 200, and alignment mark 201 comprises some discrete projections 21 and the groove 22 between adjacent protrusion 21.When detecting alignment mark, first throw light on to alignment mark, there is diffraction at alignment mark place in illumination light, diffraction light is imaged on the image sensor of alignment mark detection system, then the image that image sensor accepts is processed, realize the identification of alignment mark.
But prior art is when detecting alignment mark, often can run into and can't detect alignment mark or aim at failed problem, the efficiency of wafer alignment is lower.
Summary of the invention
The problem that the present invention solves how to improve the efficiency of wafer alignment.
For solving the problem, the invention provides a kind of imaging and measurement mechanism of alignment mark, comprise: the first convex lens unit distributed successively from top to bottom, quarter wave plate, polarization beam apparatus, the second convex lens unit, phase-shift unit, filter unit, image-generating unit, and be positioned at the coherent source of polarization beam apparatus side, wherein: coherent source, for generation of irradiation light; Polarization beam apparatus, reflects to form horizontal linear polarization light by the irradiation light that coherent source is launched; Quarter wave plate, for being converted into circularly polarized light by the horizontal linear polarization light of incidence; First convex lens unit, for circularly polarized light is focused on alignment mark surface, reflection and diffraction is there is in circularly polarized light on alignment mark surface, form zeroth order light and diffraction light, zeroth order light and diffraction light are by being converted into zeroth order light and the diffraction light of vertical polarization after the first convex lens unit and quarter wave plate, the zeroth order light of vertical polarization and diffraction light are through polarization beam apparatus; Second convex lens unit, for focusing on image-generating unit by through the zeroth order light of polarization beam apparatus and diffraction light; Phase-shift unit, for by the phase transition of the zeroth order light through the second convex lens unit being and the diffraction light same-phase through the second convex lens unit; Filter unit, for decaying through the intensity of the zeroth order light of phase-shift unit.
Optionally, described coherent source is the LASER Light Source of ring-type.
Optionally, described LASER Light Source produces wavelength 532 nanometer continuous laser.
Optionally, described phase-shift unit is positive and negative 90 ° of phase-shift units.
Optionally, described phase-shift unit comprises phase-shifted region and photic zone, and diffraction light passes through from the photic zone of phase-shift unit, and zeroth order light passes through from the phase-shifted region of phase-shift unit, and zeroth order light is identical with the phase place of diffraction light by its phase place after phase-shifted region.
Optionally, the intensity of the zeroth order light after filter unit decay is equal with the intensity of diffraction light.
Optionally, described filter unit comprises filter area and photic zone, and diffraction light passes through from the photic zone of filter unit, and zeroth order light passes through from the filter area of filter unit, and zeroth order light is attenuated by its intensity after filter area.
Optionally, described filter area is 10% ~ 99% to the attenuation amplitude of the intensity of zeroth order light.
Optionally, the incident direction of irradiation light that produces of described coherent source and the angle of polarization beam apparatus are 45 °.
Optionally, the opposite side of described polarization beam apparatus also has light dustbin, and light dustbin and described coherent source just right, described smooth dustbin be used for absorption portion through the irradiation light after polarization beam apparatus.
Present invention also offers and a kind of there is the imaging of above-mentioned alignment mark and the lithographic equipment of measurement mechanism.
Compared with prior art, technical scheme of the present invention has the following advantages:
The imaging of alignment mark of the present invention and measurement mechanism comprise phase-shift unit and filter unit, phase-shift unit is used for, filter unit is for decaying through the intensity of the zeroth order light of phase-shift unit, make the light intensity of the zeroth order light after decaying equal with the light intensity of diffraction light or close, finally the zeroth order light after phase place conversion and strength retrogression is superposed with diffraction light and be imaged on image-generating unit simultaneously.Because the intensity of the diffraction light of alignment mark generation will much smaller than the intensity of zeroth order light, and diffraction light is reflecting that the step appearance of alignment mark is in occupation of leading role, if both are directly superposed, the proportion of diffraction light in whole light intensity can be very little, the contrast of the image formed can be made to decline, therefore the imaging of alignment mark of the present invention and measurement mechanism, by the combination of phase-shift unit and filter unit, the phase place of zeroth order light is converted into diffraction light same-phase after, also need to decay to the light intensity of zeroth order light, make the light intensity of the zeroth order light after decaying equal with the light intensity of diffraction light or close, when zeroth order light after decay superposes on image-generating unit with diffraction light, both light intensity had been made to strengthen on the whole, turn increase the contrast of alignment mark image, thus alignment mark can be identified fast and accurately, improve precision and the efficiency of wafer alignment.
In addition, the coherent source that light source of the present invention adopts, the irradiation light that the irradiation light that coherent source produces produces compared to incoherent light source has narrower bandwidth, when the irradiation light adopting coherent source to produce irradiates alignment mark, relative phase stabilization between the diffraction light of the different diffraction level that alignment mark produces and zeroth order light, can modulate easily via the relative phase of phase-shift unit to them like this, make the diffraction light of different diffraction level identical with the phase place of zeroth order light, thus change the change of phase place into human eye observable intensity variation by interfering, the contrast making to be imaged on the image of alignment mark on image-generating unit increases, be conducive to the identification to alignment mark.
Further, the irradiation light that coherent source produces is ring-type, the irradiation light of ring-type is when irradiating alignment mark, the zeroth order light that alignment mark reflection produces also is ring-type, therefore time the follow-up modulation to zeroth order light (phase transition or light intensity attenuation), only need process for the annular section in light path, and can not have an impact to the diffraction light of the high-order that the alignment mark in light path produces.
Accompanying drawing explanation
Fig. 1 is the structural representation of the lithographic equipment of prior art;
Fig. 2 is the structural representation of the alignment mark of prior art;
Fig. 3 is the imaging of embodiment of the present invention alignment mark and the structural representation of measurement mechanism.
Embodiment
The alignment mark detection system of existing lithographic equipment is to the detection of the alignment mark on wafer, normally by receiving the diffraction light of alignment mark, diffraction light is imaged on the image sensor of alignment mark detection system, then the image that image sensor accepts is processed, realize the identification of alignment mark.As can be seen here, the identification of intensity to alignment mark of the diffraction light of alignment mark is very important.But, along with the continuous reduction of device size, the thickness of alignment mark is more and more thinner, alignment mark itself also becomes more and more transparent, make the projection of alignment mark and the contrast of groove and the contrast between alignment mark and dielectric layer around more and more less, when throwing light on to alignment mark, the light intensity of alignment mark diffraction efficiency and diffraction light also constantly reduces, the contrast of the image thus image sensor formed declines, alignment mark is made to be difficult to identify, cause the failure of wafer alignment, the efficiency of wafer alignment is lower.
The invention provides a kind of imaging and measurement mechanism of alignment mark, the reflected light of alignment mark and diffraction light are used for imaging simultaneously, on image-generating unit before imaging, the conversion of phase place and the decay of intensity are carried out to reflected light, the phase place of the reflected light after phase place transforms is identical with the phase place of diffraction light, the intensity of the reflected light after strength retrogression is equal with the intensity of diffraction light or close, reflected light after phase place conversion and strength retrogression and diffraction light are imaged on image-generating unit simultaneously, thus add the contrast of the image that alignment mark is formed, be easy to the identification of alignment mark, improve success ratio and the precision of wafer alignment.
For enabling above-mentioned purpose of the present invention, feature and advantage more become apparent, and are described in detail specific embodiment of the invention below in conjunction with accompanying drawing.When describing the embodiment of the present invention in detail, for ease of illustrating, schematic diagram can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, and it should not limit the scope of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
Fig. 3 is the imaging of embodiment of the present invention alignment mark and the structural representation of measurement mechanism.
With reference to figure 3, imaging and the measurement mechanism of described alignment mark comprise: the first convex lens unit 304 distributed successively from top to bottom, quarter wave plate 303, polarization beam apparatus 302, second convex lens unit 306, phase-shift unit 307, filter unit 308, image-generating unit 309, and be positioned at the coherent source 301 of polarization beam apparatus 302 side, wherein:
Coherent source 301, for generation of irradiation light;
Polarization beam apparatus 302, the irradiation light launched by coherent source 301 reflects to form horizontal linear polarization light 32;
Quarter wave plate 303, for being converted into circularly polarized light 32 by the horizontal linear polarization light 32 of incidence;
First convex lens unit 304, for circularly polarized light being focused on alignment mark 305 surface, reflection and diffraction is there is in circularly polarized light on alignment mark 305 surface, form zeroth order light 34 and diffraction light (or high order diffraction light) 35, zeroth order light 34 and diffraction light 35 are by being converted into zeroth order light and the diffraction light of vertical polarization after the first convex lens unit 304 and quarter wave plate 303, the zeroth order light of vertical polarization and diffraction light are through polarization beam apparatus 302;
Second convex lens unit 306, for focusing on image-generating unit 309 by through the zeroth order light 34 of polarization beam apparatus 302 and diffraction light 35;
Phase-shift unit 307, for by the phase transition of the zeroth order light 34 through the second convex lens unit 306 being and diffraction light 35 same-phase through the second convex lens unit 306;
Filter unit 308, for decaying through the intensity of the zeroth order light 35 of phase-shift unit 307.
Concrete, described coherent source 301 is the LASER Light Source of ring-type.Described coherent source 301 comprises light source, barrier plate 30, and barrier plate 30 has opening or the transmission region of annular, the light that light source produces is by forming the irradiation light 31 of ring-type after the opening on barrier plate 30 or transmission region.In the present embodiment, described LASER Light Source produces the continuous laser that wavelength is 532 nanometers.In other embodiments of the invention, described LASER Light Source can also produce the laser that wavelength is other numerical value.
The embodiment of the present invention adopts coherent source 301, the irradiation light that the irradiation light that coherent source 301 produces produces compared to incoherent light source has narrower bandwidth, when the irradiation light adopting coherent source 301 to produce irradiates alignment mark, relative phase stabilization between the diffraction light of the different diffraction level that alignment mark produces and zeroth order light, can modulate easily via the relative phase of phase-shift unit 307 to them like this, make the diffraction light of different diffraction level identical with the phase place of zeroth order light, thus change the change of phase place into human eye observable intensity variation by interfering, the contrast making to be imaged on the image of alignment mark on image-generating unit increases, be conducive to the identification to alignment mark.
The irradiation light 31 that coherent source 301 in the embodiment of the present invention produces is ring-type, the irradiation light of ring-type is when irradiating alignment mark, the zeroth order light that alignment mark reflection produces also is ring-type, therefore time the follow-up modulation to zeroth order light (phase transition or light intensity attenuation), only need process for the annular section in light path, and can not have an impact to the diffraction light of the high-order that the alignment mark in light path produces.
The irradiation light that coherent source 301 produces is linearly polarized light, and described linearly polarized light has horizontal state of polarization and perpendicular polarisation state.The incident direction of irradiation light that described coherent source 301 produces and the angle of polarization beam apparatus 302 are 45 °.
Polarization beam apparatus 302 is for being separated the light of different direction of vibration, the irradiation light 31 that coherent source 301 produces is when being radiated at polarization beam apparatus 302, polarization beam apparatus 302 will irradiate horizontal state of polarization in light and be separated with perpendicular polarisation state, wherein the light of horizontal state of polarization is polarized beam splitter 302 and reflects, form the linearly polarized light that the direction of vibration of horizontal linear polarization light 32(light is vertical with the plane of incidence), the light of perpendicular polarisation state, then through polarization beam apparatus 302, forms perpendicular linear polarization light (linearly polarized light that the direction of vibration of light is parallel with the plane of incidence).
The opposite side of described polarization beam apparatus 302 also has light dustbin (not shown), and light dustbin and described coherent source 301 just right, described smooth dustbin is used for absorption portion and (irradiates light when being radiated at polarization beam apparatus 302 through the irradiation light after polarization beam apparatus, perpendicular linear polarization light through polarization beam apparatus 302), thus prevent perpendicular linear polarization light from producing reflection or diffraction in other parts of lithographic equipment, thus the imaging of alignment mark and the light path of measurement mechanism are had an impact.
In the embodiment of the present invention, the alignment mark 305 on horizontal linear polarization light 32 pairs of wafers is adopted to throw light on, horizontal linear polarization light 32 is after quarter wave plate 303, horizontal linear polarization light 32 can change circularly polarized light 33 into, circularly polarized light 33 is left circularly polarized light, circularly polarized light 33 focuses on alignment mark 305 through the first convex lens unit 304, zeroth order light 34(zeroth order light 34 is reflected to form symmetrical on optical axis AB both sides with the circularly polarized light 33 of corresponding incidence) at alignment mark 305 place, and there is diffraction formation diffraction light (or high order diffraction light) 35 at alignment mark 305 place, zero order light 34 and diffraction light 35 are the circularly polarized light of dextrorotation, zero order light 34 and diffraction light 35 are after quarter wave plate 303, vertical linearly polarized light is become from the circularly polarized light of dextrorotation, the zero order light 34 of perpendicular linear polarization and diffraction light 35 are when through polarization beam apparatus 302, whole the transmitting through polarization beam apparatus 302 of energy, and reflection can not be produced on polarization beam apparatus 302, thus make the light intensity of zero order light 34 and diffraction light 35 to produce loss, on follow-up reimaging unit during imaging, add the contrast of alignment mark image.
Quarter wave plate 303 adopts kalzit or quartz to make.
Described second convex lens unit 306 is made up of convex lens and/or other optical element, and the second convex lens unit 306 is for focusing on alignment mark 305 place by the circularly polarized light 33 formed after quarter wave plate 303.
Described second convex lens unit 306 is made up of convex lens and/or other optical element, and the second convex lens unit 306 will be for focusing on image-generating unit 309 through zeroth order light 34 after polarization beam apparatus 302 and diffraction light 35.
Light path between described second convex lens unit 306 and image-generating unit 309 also have phase-shift unit 307 and filter unit 308.
Described phase-shift unit 307 is for by the phase transition of the zeroth order light 34 through the second convex lens unit 306 being and diffraction light 35 same-phase through the second convex lens unit 306.The zeroth order light 34 that alignment mark 305 place is formed is not identical with the phase place of diffraction light 35, by phase-shift unit 307 by the phase transition of zeroth order light 34 be and diffraction light 35 same-phase, when image-generating unit imaging, diffraction light can be realized superpose with zeroth order light light intensity, thus enhance the size of light intensity, improve the contrast of image.
Described phase-shift unit 307 comprises phase-shifted region 36 and photic zone 37, diffraction light 35 passes through from the photic zone 307 of phase-shift unit 307, zeroth order light 34 passes through from the phase-shifted region 36 of phase-shift unit 307, zeroth order light 34 is identical with the phase place of diffraction light 35 by its phase place after phase-shifted region 36, thus diffraction light 35 and zeroth order light 34 are consistent by the phase place after phase-shift unit 307.
The shape of the shape of described phase-shifted region 306 and size and the zeroth order light projected area on phase-shift unit 307 after the second convex lens unit 306 converges and in the same size, in the present embodiment, the shape of described phase-shifted region 36 is annulus, and the zeroth order light 34 of ring-type is converted into identical with the phase place of diffraction light 35 by the phase place after the phase-shifted region 36 of ring-type.Diffraction light 35 directly by transmitting through district 37, can not have an impact to the intensity of diffraction light 35 and phase place through district 37.The adjustment of the phase place size of described phase-shifted region 36 pairs of zeroth order light 34 is adjustable, and its range of adjustment is positive 90 ° ~ negative 90 °.
In the present embodiment, described phase-shift unit 307 is positive and negative 90 ° of phase-shift units, and the phase shift realized the phase place of zeroth order light 34 carries out positive 90 ° or negative 90 ° regulates.
Described filter unit 308, for decaying through the intensity of the zeroth order light 34 of phase-shift unit 307, makes the light intensity of the zeroth order light after decaying equal with the light intensity of diffraction light or close.Because the intensity of the diffraction light 35 of alignment mark 305 generation will much smaller than the intensity of zeroth order light 34, and diffraction light 35 is reflecting that the step appearance of alignment mark is in occupation of leading role, if both are directly superposed, the proportion of diffraction light 35 in whole light intensity can be very little, the contrast of the image formed can be made to decline, therefore the imaging of the alignment mark of the embodiment of the present invention and measurement mechanism, by the combination of phase-shift unit 307 with filter unit 308, the phase place of zeroth order light 34 is converted into diffraction light 35 same-phase after, also need to decay to the light intensity of zeroth order light 34, make the light intensity of the zeroth order light after decaying equal with the light intensity of diffraction light 35 or close, when zeroth order light after decay superposes on image-generating unit with diffraction light 35, both light intensity had been made to strengthen on the whole, turn increase the contrast of alignment mark image, thus alignment mark can be identified fast and accurately, improve precision and the efficiency of wafer alignment.
Described filter unit 308 comprises filter area 39 and photic zone 38, and diffraction light 35 passes through from the photic zone 38 of filter unit 308, and zeroth order light 34 passes through from the filter area 39 of filter unit 308, and zeroth order light 34 is attenuated by its intensity after filter area 39.Diffraction light 35 is after passing through from the photic zone 38 of filter unit 308, and its intensity and phase place can not change.The shape of the shape of described filter area 39 and size and the zeroth order light projected area on filter unit 308 after the second convex lens unit 306 converges and in the same size, in the present embodiment, the shape of described filter area 39 is annulus, and the zeroth order light 34 of ring-type is attenuated by its intensity after the filter area 39 of ring-type.
The amplitude of the decay of described filter area 39 pairs of zeroth order light 34 is adjustable, and the attenuation amplitude of the intensity of described filter area 39 pairs of zeroth order light is 10% ~ 99%.
In the present embodiment, first zeroth order light 34 is carried out to the conversion of phase place, and then the decay of intensity is carried out to the zeroth order light after phase transition, the problem that the phase place brought after preventing first carrying out the decay of intensity can not accurately be changed.
Described image-generating unit 309 is at least by charge coupled cell (Charge-coupled Device, CCD) or cmos sensor form, image-generating unit 309 is for being converted to electric signal by optical signalling, and electric signal is amplified and the process such as analog to digital conversion, realize the acquisition of image, storage, transmission, process and reproduction.
In the imaging of above-mentioned alignment mark and measurement mechanism, the concrete process of optic path is: first coherent source 301 is opened, and produces and irradiates light 31; Irradiate light 31 when being radiated at polarization beam apparatus 302, the light of horizontal state of polarization is polarized beam splitter 302 and reflects, and forms horizontal linear polarization light 32; Horizontal linear polarization light 32 is after quarter wave plate 303, horizontal linear polarization light 32 can change circularly polarized light 33 into, circularly polarized light 33 is left circularly polarized light, circularly polarized light 33 focuses on alignment mark 305 through the first convex lens unit 304, at alignment mark 305, place reflects to form zeroth order light 34, and there is diffraction formation diffraction light (or high order diffraction light) 35 at alignment mark 305 place, zero order light 34 and diffraction light 35 are the circularly polarized light of dextrorotation; Zero order light 34 forms parallel zero order light 34 and diffraction light 35 with diffraction light 35 through the first lens unit 304; Parallel zero order light 34 and diffraction light 35, after quarter wave plate 303, become vertical linearly polarized light from the circularly polarized light of dextrorotation; Zero order light 34 and the diffraction light 35 of perpendicular linear polarization transmit through polarization beam apparatus 302; Second lens unit 306 converges zero order light 34 through polarization beam apparatus 302 and diffraction light 35; The phase transition of the zeroth order light 34 after the second lens unit 306 is identical with diffraction light by phase-shift unit 307; Filter unit 308 carries out the decay of intensity to the zeroth order light 34 after phase-shift unit 307; Finally, the zeroth order light after diffraction light 35 and phase transition and strength retrogression focuses on image-generating unit 309 place.
In another embodiment of the invention, described second convex lens unit, phase-shift unit and filter unit can also be other arrangement mode, arrangement is from top to bottom: polarization beam apparatus, phase-shift unit, filter unit, second convex lens unit, image-generating unit, namely described phase-shift unit and filter unit are between polarization beam apparatus and image-generating unit, thus after to the phase transition of zeroth order light and strength retrogression, focus on image-generating unit by the second convex lens unit, in this arrangement mode, shape and the size of the filter area of the shape of the phase-shifted region of phase-shift unit and size and filter unit are all that the shape of the irradiation light sent with coherent source is identical with size, thus make the adjustment of the making of phase-shift unit and filter unit and position all very easy.The specific descriptions of phase-shift unit and filter unit function and relevant light paths please refer to previous embodiment.
The embodiment of the present invention additionally provides a kind ofly has the imaging of above-mentioned alignment mark and the lithographic equipment of measurement mechanism, when carrying out the exposure technology of photoetching, adopting the imaging of above-mentioned alignment mark and measurement mechanism to detect alignment mark on wafer, realizing the aligning of wafer.
Although the present invention discloses as above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (11)
1. the imaging of an alignment mark and measurement mechanism, it is characterized in that, comprise: the first convex lens unit distributed successively from top to bottom, quarter wave plate, polarization beam apparatus, the second convex lens unit, phase-shift unit, filter unit, image-generating unit, and be positioned at the coherent source of polarization beam apparatus side, wherein: coherent source, for generation of irradiation light; Polarization beam apparatus, reflects to form horizontal linear polarization light by the irradiation light that coherent source is launched; Quarter wave plate, for being converted into circularly polarized light by the horizontal linear polarization light of incidence;
First convex lens unit, for circularly polarized light is focused on alignment mark surface, reflection and diffraction is there is in circularly polarized light on alignment mark surface, form zeroth order light and diffraction light, zeroth order light and diffraction light are by being converted into zeroth order light and the diffraction light of vertical polarization after the first convex lens unit and quarter wave plate, the zeroth order light of vertical polarization and diffraction light are through polarization beam apparatus;
Second convex lens unit, for focusing on image-generating unit by through the zeroth order light of polarization beam apparatus and diffraction light;
Phase-shift unit, for by the phase transition of the zeroth order light through the second convex lens unit being and the diffraction light same-phase through the second convex lens unit;
Filter unit, for decaying through the intensity of the zeroth order light of phase-shift unit.
2. the imaging of alignment mark as claimed in claim 1 and measurement mechanism, it is characterized in that, described coherent source is the LASER Light Source of ring-type.
3. the imaging of alignment mark as claimed in claim 2 and measurement mechanism, it is characterized in that, described LASER Light Source produces wavelength 532 nanometer continuous laser.
4. the imaging of alignment mark as claimed in claim 1 and measurement mechanism, it is characterized in that, described phase-shift unit is positive and negative 90 ° of phase-shift units.
5. the imaging of alignment mark as claimed in claim 4 and measurement mechanism, it is characterized in that, described phase-shift unit comprises phase-shifted region and photic zone, diffraction light passes through from the photic zone of phase-shift unit, zeroth order light passes through from the phase-shifted region of phase-shift unit, and zeroth order light is identical with the phase place of diffraction light by its phase place after phase-shifted region.
6. the imaging of alignment mark as claimed in claim 1 and measurement mechanism, it is characterized in that, the intensity of the zeroth order light after filter unit decay is equal with the intensity of diffraction light.
7. the imaging of alignment mark as claimed in claim 1 and measurement mechanism, it is characterized in that, described filter unit comprises filter area and photic zone, and diffraction light passes through from the photic zone of filter unit, zeroth order light passes through from the filter area of filter unit, and zeroth order light is attenuated by its intensity after filter area.
8. the imaging of alignment mark as claimed in claim 7 and measurement mechanism, it is characterized in that, described filter area is 10% ~ 99% to the attenuation amplitude of the intensity of zeroth order light.
9. the imaging of alignment mark as claimed in claim 1 and measurement mechanism, it is characterized in that, the incident direction of irradiation light that described coherent source produces and the angle of polarization beam apparatus are 45 °.
10. the imaging of alignment mark as claimed in claim 1 and measurement mechanism, it is characterized in that, the opposite side of described polarization beam apparatus also has light dustbin, and light dustbin and described coherent source just right, described smooth dustbin be used for absorption portion through the irradiation light after polarization beam apparatus.
11. 1 kinds have the imaging of alignment mark described in any one of claim 1 ~ claim 10 and the lithographic equipment of measurement mechanism.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310315310.8A CN104345571B (en) | 2013-07-24 | 2013-07-24 | The imaging of alignment mark and measurement apparatus, lithographic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310315310.8A CN104345571B (en) | 2013-07-24 | 2013-07-24 | The imaging of alignment mark and measurement apparatus, lithographic equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104345571A true CN104345571A (en) | 2015-02-11 |
| CN104345571B CN104345571B (en) | 2016-08-10 |
Family
ID=52501482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310315310.8A Active CN104345571B (en) | 2013-07-24 | 2013-07-24 | The imaging of alignment mark and measurement apparatus, lithographic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104345571B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105988309A (en) * | 2015-02-26 | 2016-10-05 | 上海微电子装备有限公司 | Alignment device for lithography equipment and alignment method |
| CN106796406A (en) * | 2014-08-25 | 2017-05-31 | Asml控股股份有限公司 | Measuring method, measuring apparatus, lithographic equipment and device making method |
| CN107490930A (en) * | 2017-09-01 | 2017-12-19 | 深圳奥比中光科技有限公司 | With the laser projection device for suppressing Zero-order diffractive |
| CN110663002A (en) * | 2017-05-19 | 2020-01-07 | Asml荷兰有限公司 | Method of measuring an object, metrology apparatus, lithographic cell and object |
| TWI731979B (en) * | 2016-05-31 | 2021-07-01 | 日商尼康股份有限公司 | Mark detection apparatus, mark detection method, measurement apparatus, exposure apparatus, exposure method and method of manufacturing device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1506768A (en) * | 2002-09-20 | 2004-06-23 | Asml荷兰有限公司 | Alignment system and method for photoetching system |
| JP2006250858A (en) * | 2005-03-14 | 2006-09-21 | Nikon Corp | Surface accuracy measuring method, interferometer, surface accuracy measuring instrument, and projection optical system manufacturing method |
| JP2007149807A (en) * | 2005-11-25 | 2007-06-14 | Nikon Corp | Position detection apparatus and exposure apparatus |
| US20070177123A1 (en) * | 2006-01-27 | 2007-08-02 | Asml Netherlands B.V. | Lithographic projection apparatus and a device manufacturing method |
| CN101980083A (en) * | 2010-09-13 | 2011-02-23 | 长春理工大学 | Method and system for preparing filter membrane mesh structure by laser interference photoetching technology |
| US20120081687A1 (en) * | 2010-09-30 | 2012-04-05 | Georgia Tech Research Corporation | Interference projection exposure system and method of using same |
-
2013
- 2013-07-24 CN CN201310315310.8A patent/CN104345571B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1506768A (en) * | 2002-09-20 | 2004-06-23 | Asml荷兰有限公司 | Alignment system and method for photoetching system |
| JP2006250858A (en) * | 2005-03-14 | 2006-09-21 | Nikon Corp | Surface accuracy measuring method, interferometer, surface accuracy measuring instrument, and projection optical system manufacturing method |
| JP2007149807A (en) * | 2005-11-25 | 2007-06-14 | Nikon Corp | Position detection apparatus and exposure apparatus |
| US20070177123A1 (en) * | 2006-01-27 | 2007-08-02 | Asml Netherlands B.V. | Lithographic projection apparatus and a device manufacturing method |
| CN101980083A (en) * | 2010-09-13 | 2011-02-23 | 长春理工大学 | Method and system for preparing filter membrane mesh structure by laser interference photoetching technology |
| US20120081687A1 (en) * | 2010-09-30 | 2012-04-05 | Georgia Tech Research Corporation | Interference projection exposure system and method of using same |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106796406A (en) * | 2014-08-25 | 2017-05-31 | Asml控股股份有限公司 | Measuring method, measuring apparatus, lithographic equipment and device making method |
| CN105988309A (en) * | 2015-02-26 | 2016-10-05 | 上海微电子装备有限公司 | Alignment device for lithography equipment and alignment method |
| CN105988309B (en) * | 2015-02-26 | 2019-01-18 | 上海微电子装备（集团）股份有限公司 | A kind of alignment device and alignment methods for lithographic equipment |
| TWI731979B (en) * | 2016-05-31 | 2021-07-01 | 日商尼康股份有限公司 | Mark detection apparatus, mark detection method, measurement apparatus, exposure apparatus, exposure method and method of manufacturing device |
| CN110663002A (en) * | 2017-05-19 | 2020-01-07 | Asml荷兰有限公司 | Method of measuring an object, metrology apparatus, lithographic cell and object |
| CN110663002B (en) * | 2017-05-19 | 2021-10-15 | Asml荷兰有限公司 | Method of measuring an object, metrology apparatus, lithographic cell and object |
| CN107490930A (en) * | 2017-09-01 | 2017-12-19 | 深圳奥比中光科技有限公司 | With the laser projection device for suppressing Zero-order diffractive |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104345571B (en) | 2016-08-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6712349B2 (en) | Alignment system | |
| US5004348A (en) | Alignment device | |
| CN104345571A (en) | Alignment mark imaging and measuring apparatus, and lithography apparatus | |
| CN105190446B (en) | Alignment sensor, lithographic apparatus and alignment method | |
| CN101446775B (en) | Alignment light source apparatus | |
| CN101566800B (en) | Aligning system and aligning method for lithography equipment | |
| TW200403541A (en) | Lithographic apparatus, device manufacturing method, and device manufactured thereby | |
| KR102120551B1 (en) | Apparatus for measuring overlay | |
| CN87100831A (en) | A kind of device that is used to aim at the method for the first and second object relevant positions and realizes this method | |
| JP7280434B2 (en) | Overlay measuring device | |
| JP2018523850A (en) | Submicron wafer alignment | |
| JP4701460B2 (en) | Inspection apparatus, inspection method, and pattern substrate manufacturing method | |
| CN105070201B (en) | Alignment device for the Moire fringe of lithographic equipment | |
| CN102096337B (en) | Device for detecting eccentricity and focal surface position of spherical surface or curved surface in projection photoetching | |
| CN111505914A (en) | Optical alignment device and photoetching system | |
| CN107450272B (en) | Off-axis illumination device | |
| CN104460248B (en) | Alignment device | |
| CN1621944B (en) | Projection light etching image-forming system | |
| JP6228420B2 (en) | Detection apparatus, lithographic apparatus, and article manufacturing method | |
| CN113448192A (en) | Alignment system and photoetching machine | |
| CN113448193B (en) | Alignment system and photoetching machine | |
| CN116819917B (en) | Mask plate, exposure equipment and mask plate alignment method | |
| CN102749816B (en) | Focusing and leveling measurer | |
| CN103135358B (en) | Multi-light-source interference exposure device | |
| JPS6258626A (en) | Mask alignment process |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |