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Projection light etching image-forming system

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Publication number
CN1621944B
CN1621944B CN 200310115503 CN200310115503A CN1621944B CN 1621944 B CN1621944 B CN 1621944B CN 200310115503 CN200310115503 CN 200310115503 CN 200310115503 A CN200310115503 A CN 200310115503A CN 1621944 B CN1621944 B CN 1621944B
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Prior art keywords
photoetching
imaging
light
projection
polarization
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CN 200310115503
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Chinese (zh)
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CN1621944A (en )
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余国彬
刘业异
姚汉民
胡松
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中国科学院光电技术研究所
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Abstract

The projection photoetching polarization imaging system includes ellipsoidal lens, light source, high strength and has homogeneity lighting part, projection photoetching objective, silicon chip, etc. and features the polarizing mask set in the object plane of projection photoetching objective for polarizing modulation of the imaging light beam, and the imaging light beams transmitting the polarizing mask and with modifying polarization states and vertical electric field vibration directions in 45 deg to the edge of characteristic photoetching line. The light beams with vertical polarization directions produce no interference and results in no secondary peak of images of adjacent line on the silicon chip, less proximity effect and raised resolution. Thus, the present invention can result in raised photoetching imaging resolution and increased focal depth of projection photoetching and imaging system.

Description

投影光学光刻偏振成像系统 The projection optical system polarization imaging lithography

[0001] 所属技术领域 [0001] skilled in the art

[0002] 本发明涉及一种超大规模集成电路生产设备分步重复投影光刻机和步进扫描投影光刻机高分辨力投影成像技术领域中的投影光学光刻偏振成像系统。 [0002] The present invention relates to a projection optical lithography system for polarization imaging device VLSI production step and repeat BACKGROUND high-resolution image projection and a stepping projection aligner in scanning projection lithography.

背景技术 Background technique

[0003] 对超大规模集成电路器件的迫切需求,促进了投影光学光刻技术的飞速发展,为了延长投影光学光刻技术的极限和寿命,近年来,常采用短波长、大数值孔径、以及离轴照明技术等等。 [0003] The urgent need for VLSI devices, promote the rapid development of optical projection lithography, in order to prolong the life limit and a projection optical lithography technology in recent years, often short-wavelength, high numerical aperture, and from axis illumination technologies. 然而随着数值孔径的增大,曝光波长的缩短,基于偏振性的矢量衍射效应对光刻图形的影响越来越大,如光刻的最小特征尺寸接近和低于曝光波长;高数值孔径的投影光学系统的使用导致了入射光波严重倾斜;反射和由硅片空间形状造成的各种影响;以及照明光在光刻胶中的散射效应等等。 However, with the increasing numerical aperture, exposure wavelength shortening effect on the lithographic pattern based on the vector diffraction effect of increasing polarization, lithographic minimum feature size of the exposure wavelength near and below; high numerical aperture using a projection optical system results in serious inclined incident light wave; reflection and various effects caused by the spatial shape of the wafer; and a lighting light scattering effect in the photoresist and the like.

[0004] 现在我国还没有投影光学光刻偏振成像系统,只有一般的投影光学光刻成像系统。 [0004] Now, China has no polarization imaging optical lithography projection system, the projection optical lithography typically only imaging systems. 现有投影光学光刻成像系统的不足:随着数值孔径(NA)的增大、波长的缩短,基于偏振特性的矢量衍射效应对光刻图形的影响越来越大,不能进行精细的线条图形制作。 Deficiencies of the prior projection optical lithography imaging systems: With increasing the numerical aperture (NA), the wavelength is shortened, the influence based on the vector diffraction effect of the polarization characteristic of increasing lithography patterning can not be fine line pattern production.

发明内容 SUMMARY

[0005] 本发明需要解决的技术问题是:克服上述现有技术的不足,而提供一种投影光学光刻偏振成像系统,在光刻掩模上直接制作对成像光束进行偏振调制的偏振膜,既保证偏振光成像,又能提高成像对比度,较大地提高投影光学成像光刻分辩力,同时也能增大焦深。 [0005] The present invention is a technical problem to be solved: to overcome the disadvantages of the prior art, to provide a projection optical lithography polarization imaging system, the imaging film to form a polarizing beam polarization modulation directly on the lithography mask, both to ensure polarized light imaging, but also improve the image contrast, greatly improve the imaging optical projection lithography differentiate force, while also increasing the depth of focus.

[0006] 本发明的技术解决方案是:投影光学光刻偏振成像系统,包括椭球镜、光源、高强度高均勻照明部件、投影光刻物镜及硅片,其特征在于:在投影光刻物镜的物面上放置了可对成像光束进行偏振调制的偏振掩模板。 [0006] The technical solutions of the present invention are: a projection optical lithography polarization imaging system, comprising an ellipsoidal mirror, a light, high strength and uniform illumination member, a projection lithography lens and wafer, comprising: a projection lithography lens in placing the object plane of polarization of the polarization modulation mask may be made of the imaging beam.

[0007] 所述的偏振掩模板由石英基板,和在石英基板上的不透光部位相邻的透光部位制作有对成像光束进行不同线偏振调制的两种偏振膜层。 [0007] The mask fabricated with a polarizing beam imaging two different linear polarization modulation by the polarizing film quartz substrate, and a quartz substrate in the opaque portion of the adjacent light-transmitting portions.

[0008] 所述的两种偏振膜层所调制的线偏振光相互垂直交叉,而且两种偏振膜层所调制的线偏振光都与光刻特征线条边缘有45°夹角。 Two kinds of polarizing film [0008] of the modulated linearly polarized light perpendicularly intersecting each other, and the two polarizing layers are modulated linearly polarized light with a 45 ° angle to the lithographic feature line edge.

[0009] 所述偏振掩模板的石英基板上还制作了使透射偏振光相位发生180°改变的相移层。 [0009] The polarizing reticle quartz substrate also produced so that the transmission polarization phase change occurs 180 ° phase shift layer.

[0010] 本发明与现有技术相比具有如下优点: [0010] The present invention and the prior art has the following advantages:

[0011] 1、在本发明中,成像光束的偏振方向影响系统的传递函数,将掩模产生的高空间频率信号转换成有限数值孔径的物镜能接受的底空间频率信号,然后由物镜将这些低频信息在像面转换回其原始频率,精确成像,进一步了提高分辨率。 [0011] 1, in the present invention, the polarization direction of the imaging beam impact system transfer function, high spatial frequency conversion signal generated by the mask substrate into spatial frequency signal limited numerical aperture of the objective lens can be accepted by the objective lens and those low frequency information in the image plane back to its original frequency, precise imaging, the resolution is further improved.

[0012] 2、本发明中的物面放置偏振掩模板实现偏振光成像,针对不同的特征线条,可以制作不同的偏振掩模板,而不需对传统投影成像系统做任何改变。 [0012] 2, the object plane of the mask of the present invention placed polarizing achieve polarized light imaging, lines for different features, can produce different polarization mask, without any changes to conventional projection imaging system.

[0013] 3、本发明加入了偏振掩模板改变了原来成像系统三束光成像为两束光成像,进一步提高了分辨力,由于二束光成像,光程差为零,成像焦深也得到了提高。 [0013] 3, the present invention is added to change the original polarization reticle imaging system imaging light into two beams of light imaging, to further improve the resolution, since the two imaging beam, the optical path difference is zero, the imaging depth of focus three beams obtained improved.

[0014] 4、在深亚微米和超深亚微米级范围内超微细图形中,都可以应用投影光刻投影光学光刻偏振成像系统,提高分辨力和焦深。 [0014] 4, in the deep sub-micron and ultra-deep submicron range ultrafine pattern, the projection can apply polarization imaging lithographic projection optical lithography system, to improve the resolution and depth of focus.

附图说明: BRIEF DESCRIPTION OF:

[0015] 图1为本发明的结构示意图; [0015] FIG. 1 is a schematic view of the structure of the present invention;

[0016] 图2A为发明中偏振掩模板实施例1的结构示意图; [0016] FIG. 2A is a schematic structural diagram of the embodiment of the invention the polarizing reticle;

[0017] 图2B为图2A中偏振掩模板透过率曲线图; [0017] FIG. 2A 2B is a reticle polarization transmittance graph;

[0018] 图2C为图2A中偏振掩模板透过率曲线图; [0018] FIG 2A to FIG 2C is a reticle polarization transmittance graph;

[0019] 图3A为本发明偏振掩模板实施例2的结构示意图; [0019] FIG. 3A polarization mask schematic structural diagram of embodiment 2 of the present invention;

[0020] 图;3B为图3A中偏振掩模板透过率曲线图; [0020] FIG.; FIG. 3B is a graph showing the transmittance of reticle polarization. 3A;

[0021] 图3C为图3A中偏振掩模板透过率曲线图。 [0021] FIG 3C is a graph of the transmittance of reticle polarization FIG. 3A.

具体实施方式 detailed description

[0022] 如图1所示,本发明由椭球镜1、光源2、高能量高均勻照明部件3、偏振掩模板4、 投影光刻物镜5、及硅片6等构成,光源2所发射的光被椭球镜1收集,并将光聚集通过高能量高均勻照明部件3照明偏振掩模板4,而偏振掩模板4上的超微细特征图形通过投影光刻物镜5投影成像于硅片6上,其中偏振掩模板4由石英基板9和在其上制作的可对成像光束进行不同线偏振调制的偏振膜层7和偏振膜层8组成,偏振膜层7所调制的线偏振光和偏振膜层8所调制的线偏振光相互垂直交叉。 [0022] As shown in FIG. 1, the present invention consists of an ellipsoidal mirror, a light source 2, a high energy high uniform illumination member 3, the polarization mask 4, objective lens 5 projection lithography, and the silicon wafer 6 and the like, a light source emitting two the light is collected by an ellipsoidal mirror, and the light collection by a high energy high illumination member 3 uniformly polarized illumination mask 4, wherein the ultra fine pattern on the reticle 4 by a polarization projection lithography projection imaging lens 5 on the silicon wafer 6 on which the mask 4 by the polarizer 9 and the quartz substrate on which may be made of different linear polarization modulation of the imaging beam polarizing film 7 and the polarizing film 8 composed of, polarizing film 7 and the modulated linearly polarized light polarizing layer 8 modulated linearly polarized light perpendicularly intersecting each other.

[0023] 本发明的原理是:这两种偏振膜层制作在偏振掩模板上,偏振膜层调制成像光束而影响系统的传递函数,将掩模产生的高空间频率信号转换成有限数值孔径的物镜能接受的低空间频率信号,然后由物镜5将这些低频信息在硅片6面转换回其原始频率,精确成像,可在保证足够曝光容限的情况下进一步提高系统成像分辨能力;而且由于偏振方向相互垂直的光不产生干涉效应,若使掩模上相邻特征线条透过偏振方向相互垂直的光,则相邻线条的像在硅片上不会产生次峰,故邻近效应小,可进一步提高分辨率,进一步挖掘短波长大数值孔径投影成像系统的光刻分辨力能力。 [0023] The principles of the present invention are: two polarizer polarizing film fabricated mask plate, polarizing film affecting the imaging beam modulation transfer function of the system, the high spatial frequency conversion signal generated by the mask to finite numerical aperture the objective lens can accept the low spatial frequency signal, and then by the objective lens 5 to the low frequency information in the surface of the silicon wafer 6 back to its original frequency, precise imaging, can ensure a sufficient exposure margin to further improve the case where resolution of the imaging system; and because the polarization direction of light perpendicular to each other without interference occurs, when the character line direction of polarization perpendicular to each other through an optical mask adjacent, the adjacent lines as no second peak on a silicon wafer, the proximity effect so small, can further improve the resolution, the resolution ability of photolithography further tap short grow numerical aperture of projection of the imaging system.

[0024] 如图2所示为本发明的偏振掩模板实施例1,在不透光区域10相邻的透光区域覆盖了一层能使成像光束的偏振方向互相垂直正交,而且偏振方向对于光刻特征线条边缘来说,具有45°的倾斜角的偏振膜层7和偏振膜层8,在图2A中用箭头方向表示通过光束的偏振方向。 Polarizing mask [0024] As shown in Example 2 of the present invention 1, the cover layer enables the direction of polarization orthogonal to each other perpendicular to the imaging beam in the light transmitting region 10 adjacent to the opaque region, and the polarization direction inclination angle polarizing film for the lithographic feature line edge, having a 45 ° polarizing film 8 and 7, in the direction indicated by the arrow in FIG. 2A by the polarization direction of the beam.

[0025] 如图3所示为本发明的偏振掩模板实施例2,在不透光区域10相邻的透光区域覆盖了一层能使成像光束的偏振方向互相垂直正交,而且偏振方向对于光刻特征线条边缘来说,具有45°的倾斜角的偏振膜层7和偏振膜层8,在图3A中用箭头方向表示通过光束的偏振方向;而且在本实施例中,在不透光区域10相邻的透光区域11和12附加上使成像光束相位产生180°变化的相移层13,再在相移层13上覆盖了一层能使成像光束的偏振方向互相垂直正交,而且偏振方向对于光刻特征线条边缘来说,具有45°的倾斜角的偏振膜层7和偏振膜层8,加入此相移层,可实现极高的分辨力,同时增大焦深。 [0025] FIG polarization mask 3 of the present embodiment of the invention shown in FIG 2, the cover layer enables the direction of polarization orthogonal to each other perpendicular to the imaging beam in the light transmitting region 10 adjacent to the opaque region, and the polarization direction for lithographic feature line edge, a polarizing film having a tilt angle of 45 ° polarizing film 7 and 8, showing the direction of polarization through the light beam in a direction indicated by an arrow in FIG. 3A; and in the present embodiment, the impervious 12 attached on the light transmitting region 10 adjacent the region 11 and the beam forming phase change is generated 180 ° phase-shift layer 13, and then the phase-shift layer is covered with a polarization direction of the imaging beam can mutually orthogonal vertical 13 the inclination angle of the polarizing film, and the polarization direction of the lithographic feature is a line edge, having a 45 ° polarizing film 7 and 8, was added to this phase-shift layer, can achieve high resolution, while increasing the depth of focus.

[0026] 本发明上述实施例中,针对特征线条的边缘,把两种偏振光的偏振方向倾斜45°的理由主要是:在线偏振光中,电场的振动方向,对入射面而言,垂直的TE (tran s ν er se electric)偏振状态和电场的振动方向在入射面内有TM(transverse magnetic)偏振状态;假如仅使TE偏振光和TM偏振光透过不透光部10的相邻透光部位,将会引起以下的问题,即照明光透过偏振掩模板,将会产生各种级数的衍射光束,衍射级数不同的成像光束, 通过入射面内的不同光路到达硅片面成像。 Reason for the above embodiments [0026] In the present invention, for the edge feature lines, inclined by 45 ° to the polarization direction of the polarized light are mainly two kinds: linearly polarized light, the vibration direction of electric field of the incident surface, the vertical TE (tran s ν er se electric) polarization state, and the vibration direction of the electric field with a TM (transverse magnetic) polarization state incident in a plane; if only the TE polarized light and TM polarized light through passing through the adjacent light transmitting portion 10 is not optical parts, will cause the following problem, i.e., the illumination light passes through the polarizing mask, it will generate various order diffracted beams of different diffraction orders imaging beam arriving at the wafer surface imaged by the different optical paths incident surface . 对于TE偏振光,即使衍射光束级数不同,电场的振动方向垂直于入射面,因此,衍射光束的干涉效果最好,而对于TM偏振光,由于不同级数的衍射光束有不同的衍射角度,所以不同级数的衍射光束的电场振动方向将不同,这时衍射光束的干涉效果将最小。 For TE polarized light, even order, different from the diffracted beam, the vibration direction of electric field perpendicular to the incident surface, and therefore, the best interference effect diffracted beam, and for TM polarized light, because of the different order diffracted beams have different diffraction angles, the vibration direction of electric field in different stages of different diffracted beam, when diffracted beam interference effect will be minimal. 因此,在硅片面成像时,TE偏振光透过的部分光强度将变大, TM偏振光透过的部分光强度将变小,在整个投影光刻成像范围内将产生各处亮度不同。 Thus, when the image forming surface of the wafer, the intensity of the TE polarized portion of the light transmission becomes large, part of the light intensity of TM polarized light becomes small in the whole range of the imaging projection lithography will produce different brightness around. 本发明实施例为了回避这种亮度差的产生,所以偏振掩模板上不透光部位10相邻的透光部位透过偏振方向相对于光刻特征线条边缘来说,具有45°的倾斜角的偏振光束,在偏振掩模板的透光部位就可以获得TE偏振光和TM偏振光的中间光强度。 Embodiments of the present invention in order to avoid a difference in brightness, so that the polarizing plate opaque mask portion 10 adjacent to the light-transmitting portion with respect to the transmission polarization direction for lithographic feature line edge having an inclination angle of 45 ° polarized beam, the polarization of the light-transmitting portion of the mask can be obtained intermediate light intensity of the TE polarized light and TM polarized light.

Claims (1)

1.投影光学光刻偏振成像系统包括椭球镜(1)、光源O)、高强度高均勻照明部件(3)、 投影光刻物镜(¾及硅片(6),其特征在于:在投影光刻物镜(¾的物面上放置了可对成像光束进行偏振调制的偏振掩模板G),所述偏振掩模板(4)在不透光区域(10)相邻的透光区域(11、12)附加上使成像光束相位产生180°变化的相移层(13),再在相移层(1¾上覆盖了一层能使成像光束的偏振方向互相垂直正交,而且偏振方向对于光刻特征线条边缘来说,具有45°的倾斜角的第一偏振膜层(7)和第二偏振膜层(8)。 1. The projection optical system includes a polarization imaging lithography elliptical mirror (1), a light source O), high strength and high uniform illumination member (3), projection lithography objective (¾ and wafers (six), wherein: the projection lithography objective (object plane polarization ¾ mask is placed on the imaging beam G may be a polarization modulation), the polarizing mask (4) adjacent the opaque region (10) transmissive areas (11, 12) generating an imaging light beam 180 ° phase change in the phase shift an additional layer (13), and then the phase-shift layer (covering layer enables the direction of polarization orthogonal to each other perpendicular to the imaging beam on 1¾, and the direction of polarization for lithography a first polarizing film wherein the inclination angle of the line edges, it has a 45 ° (7) and a second polarizing film (8).
CN 200310115503 2003-11-28 2003-11-28 Projection light etching image-forming system CN1621944B (en)

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US7889315B2 (en) 2006-04-13 2011-02-15 Asml Netherlands B.V. Lithographic apparatus, lens interferometer and device manufacturing method
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Publication number Priority date Publication date Assignee Title
JPH05241324A (en) 1992-02-26 1993-09-21 Nikon Corp Photomask and exposing method
US5459000A (en) 1992-10-14 1995-10-17 Canon Kabushiki Kaisha Image projection method and device manufacturing method using the image projection method
US20020197541A1 (en) 2001-06-20 2002-12-26 Grobman Warren D. Method and apparatus for forming a pattern on an integrated circuit using differing exposure characteristics

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05241324A (en) 1992-02-26 1993-09-21 Nikon Corp Photomask and exposing method
US5459000A (en) 1992-10-14 1995-10-17 Canon Kabushiki Kaisha Image projection method and device manufacturing method using the image projection method
US20020197541A1 (en) 2001-06-20 2002-12-26 Grobman Warren D. Method and apparatus for forming a pattern on an integrated circuit using differing exposure characteristics

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