CN102004276B - Photon sieve phase contrast objective lens, manufacturing method and imaging method - Google Patents

Photon sieve phase contrast objective lens, manufacturing method and imaging method Download PDF

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CN102004276B
CN102004276B CN2010102633392A CN201010263339A CN102004276B CN 102004276 B CN102004276 B CN 102004276B CN 2010102633392 A CN2010102633392 A CN 2010102633392A CN 201010263339 A CN201010263339 A CN 201010263339A CN 102004276 B CN102004276 B CN 102004276B
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photon screen
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CN102004276A (en
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程冠晓
胡超
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Changshu intellectual property operation center Co.,Ltd.
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Shenzhen Institute of Advanced Technology of CAS
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Abstract

The invention relates to a photon sieve phase contrast objective lens which comprises a photon sieve lens formed by a substrate and a plurality of light-transmitting holes arranged on the substrate, and a phase-changing plate arranged on the surface of the photon sieve lens, wherein the phase-changing plate is positioned at the middle part of the photon sieve lens or on the edge around the photon sieve lens, and the center of the photon sieve lens and the center of the phase-changing plate are positioned on the same axial line. In addition, the invention further provides a manufacturing method of the photon sieve phase contrast objective lens and an imaging method. In the photon sieve phase contrast objective lens, the manufacturing method and the imaging method, the photon sieve lens is adopted for suppressing side lobe and high-order diffraction focus, thereby realizing high imaging resolution and high imaging contrast; and the photon sieve lens and the phase-changing plate are etched on the same substrate, the phase-changing plate is arranged on the surface of the photon sieve lens, and the center of the photon sieve lens and the center of the phase-changing plate are positioned on the same axial line, thereby being capable of realizing precise alignment, simultaneously reducing exposure time and exposure dose and being capable of realizing non-destructive detection with high imaging resolution and high imaging contrast of a minute structure in a weakly absorbing material.

Description

Photon screen phase contrast object lens, manufacturing approach and formation method
[technical field]
The present invention relates to the object lens field, particularly a kind of photon screen phase contrast object lens, manufacturing approach and formation method.
[background technology]
The shortwave electromagnetic radiation has the powerful ability that penetrates object.Shortwave electromagnetic radiation imaging technique is widely used in the Non-Destructive Testing of the internal structure of body of clinical medicine, scientific research and industrial circle.Owing to there is the difference of bright-dark degree on the image between zones of different, promptly contrast just makes and can observe the distinct image details.The shortwave microscope is a kind of equipment that utilizes shortwave electromagnetic radiation such as ultraviolet or X ray to obtain the enlarged image of testee.The figure image contrast that microscope obtained depends on energy absorption or the phase modulation (PM) of testee to the photoelectron radiation usually.The former is called the absorption contrast imaging, and the latter is called the phase contrast imaging.
The typical contrast shortwave microscopic system that absorbs is used concentrating element, for example a convergent lens usually; Radiation is focused on testee; With object lens, zone plate for example, the transmitted radiation collection of energy that will pass through testee is got up and is formed image recording on the detector of image planes.The cube that absorbs the photon energy of contrast and radiation is inversely proportional to, and is directly proportional with the biquadratic of atomic number.Thereby, absorbing the situation that contrast imaging is applicable to low-energy radiation and high z number material structure, but enough sample penetration degree of depth can not be provided, the structure that is not suitable for low atomic number material or weak absorbing material is surveyed.
For the testee that constitutes by low atomic number material or weak absorbing material, can utilize the phase-shift characterisitc generation figure image contrast of its structure.Though the prospect of shortwave micro-imaging technique is very tempting, its development is limited by the Primary Component that focuses on shortwave radiation always.Because nearly all material to the refractive index of shortwave radiations such as X ray all less than 1, so be difficult to adopt conventional refraction or reflective optics to its focusing or imaging.Traditional phase contrast shortwave microscope adopts the phase contrast shortwave micro-imaging technique based on the zone plate object lens.But image detail is fuzzy, picture contrast is lower, and zone plate is difficult to accurate aligning with grommet mutually on being positioned at its focal plane.
[summary of the invention]
Based on this, be necessary to provide a kind of image contrast and resolution higher and aim at accurate photon screen phase contrast object lens.
In addition, also be necessary to provide a kind of manufacturing approach of photon screen phase contrast object lens.
Also be necessary to provide a kind of formation method of photon screen phase contrast object lens.
A kind of photon screen phase contrast object lens; Comprise by substrate and be located at the formed photon screen lens of said suprabasil a plurality of light holes and be located at the phase-changing plate of said photon screen lens surface; Said phase-changing plate is positioned at the middle part of said photon screen lens or is surrounded on the edge of said photon screen lens, and the center of the center of said photon screen lens and phase-changing plate is on same axis.
Preferably, the surface of said substrate is plane or curved surface.
Preferably, said photon screen lens are a kind of in amplitude type photon screen, phase type photon screen and the achromatism photon sieve.
Preferably, said photon screen lens are circular, the annulus of justifying or be surrounded on the edge of said photon screen lens that is shaped as the middle part that is positioned at said photon screen lens of said phase-changing plate.
A kind of manufacturing approach of photon screen phase contrast object lens may further comprise the steps:
One substrate is provided;
The a plurality of light holes of etching in said substrate are to form the photon screen lens;
Form phase-changing plate at said photon screen lens surface, and make said phase-changing plate be positioned at the middle part of said photon screen lens or be surrounded on the edge of said photon screen lens, the center of the center of phase-changing plate and photon screen lens is on same axis.
Preferably, said phase-changing plate is on said photon screen lens, to electroplate or photoetching formation.
Preferably, when etching forms said photon screen lens in said substrate, cover said substrate core, said phase-changing plate is formed by said substrate core.
A kind of formation method based on photon screen phase contrast object lens may further comprise the steps:
One photon screen phase contrast object lens are provided; Said photon screen phase contrast object lens comprise by substrate and are located at the formed photon screen lens of said suprabasil a plurality of light holes and are located at the phase-changing plate of said photon screen lens surface; Said phase-changing plate is positioned at the middle part of said photon screen lens or is surrounded on the edge of said photon screen lens, and the center of the center of said photon screen lens and phase-changing plate is on same axis;
Said photon screen phase contrast object lens obtain the transmitted light of irradiating object and the diffraction light that the object phase structure causes;
Said phase-changing plate moves predetermined phase place with said transmitted light;
Transmitted light and the said diffraction light of said photon screen phase contrast object lens after with said phase shift is focused at and forms interference image on the image planes.
Above-mentioned photon screen phase contrast object lens, manufacturing approach and formation method adopt photon screen lens suppressed sidelobes and high order diffraction focus, and imaging resolution and image contrast are high; Photon screen lens and phase-changing plate are etched in the same substrate and phase-changing plate is located at the surface of photon screen lens; Close proximity; The center of photon screen lens and the center of phase-changing plate are on same axis, and system architecture is simple, and can accurately aim at; Reduced time shutter and exposure dose simultaneously, can realize that the high imaging resolution of the inner microtexture of weak absorbing material becomes the image contrast lossless detection with height.
[description of drawings]
Fig. 1 is a photon screen phase contrast micro-imaging schematic diagram;
Fig. 2 A is that center and the substrate surface that phase-changing plate is arranged on the photon screen lens in the photon screen phase contrast object lens among the embodiment is the front view (FV) on plane;
Fig. 2 B is that center and the substrate surface that phase-changing plate is arranged on the photon screen lens in the photon screen phase contrast object lens among the embodiment is the outboard profile on plane;
Fig. 3 A is the front view (FV) on plane for edge and the substrate surface that phase-changing plate in the photon screen phase contrast object lens among another embodiment is arranged on the photon screen lens;
Fig. 3 B is the outboard profile on plane for edge and the substrate surface that phase-changing plate in the photon screen phase contrast object lens among another embodiment is looped around the photon screen lens;
Fig. 4 A is that center and the substrate surface that phase-changing plate is arranged on the photon screen lens in the photon screen phase contrast object lens among the embodiment is the outboard profile of curved surface;
Fig. 4 B is the outboard profile of curved surface for edge and the substrate surface that phase-changing plate in the photon screen phase contrast object lens among another embodiment is looped around the photon screen lens;
Fig. 5 be among the embodiment on the two sides of substrate photoetching form the synoptic diagram of photon screen lens and phase-changing plate;
Fig. 6 is the manufacturing approach process flow diagram of photon screen phase contrast object lens among the embodiment;
Fig. 7 is based on the formation method process flow diagram of photon screen phase contrast object lens among the embodiment.
[embodiment]
Mainly combine accompanying drawing and embodiment that above-mentioned photon screen phase contrast object lens are further described below.
Fig. 1 is the schematic diagram of photon screen phase contrast micro-imaging.In one embodiment, photon screen phase contrast object lens comprise photon screen lens 10 and are located at the phase-changing plate 20 on photon screen lens 10 surface.Photon screen lens 10 are formed by a substrate 11 and 12 of a plurality of light holes that are arranged in the substrate 11.Phase-changing plate 20 is positioned at the middle part of photon screen lens 10 or is surrounded on the edge of photon screen lens 10, and the center of the center of phase-changing plate 20 and photon screen lens 10 is on same axis.So, phase-changing plate 20 is closely linked with photon screen lens 10.A light part that is radiated on the testee leaves an axle diffraction light through forming after the phase structure effect of object, and a part is passed object and formed direct transmitted light and carry out phase shift through phase-changing plate 20.Transmitted light after diffraction light and the phase shift is focused at interference imaging on the image planes by photon screen lens 10.Use monochromatic relevant short wavelength light irradiation testee 1; Utilization is close to additional predetermined phase of direct transmitted light that photon screen lens 10 lip-deep phase-changing plates 20 are given testee 1; Can on image planes, be interfered by coalescence by the photon screen object lens through the direct transmitted light of phase shift and diffraction light and the scattered light that testee 1 phase structure causes; The phase shift that the intensity of interference image and object cause is linear, thereby makes the phase shift or the refractive index characteristic that characterize testee 1 structure on image planes, note formation as 3 with the mode of scheming image contrast.
Fig. 2 A is the front view (FV) that phase-changing plate 20 is arranged on the center of photon screen lens 10 in the photon screen phase contrast object lens, and Fig. 2 B is the outboard profile that phase-changing plate 20 is arranged on the center of photon screen lens 10 in the photon screen phase contrast object lens.Fig. 3 A is the front view (FV) that phase-changing plate 20 is arranged on the edge of photon screen lens 10 in the photon screen phase contrast object lens, and Fig. 3 B is the outboard profile that phase-changing plate 20 is arranged on the edge of photon screen lens 10 in the photon screen phase contrast object lens.Photon screen lens 10 comprise substrate 11 and light hole 12.Utilize phase-changing plate 20 that the transmitted light of irradiating object is applied a predetermined phase place like this, make that phase differential is assembled back interference imaging on image planes for
Figure GSB00000750721500051
or
Figure GSB00000750721500052
between the diffraction light that this bundle causes through the phase structure of the transmitted light of phase shift and object.Energy absorption attenuation through phase-changing plate 20; The diffraction light energy that the transmitted light energy of object and the phase structure of object cause is approaching; And phase-changing plate 20 is located at the surface of photon screen lens 10, combines closely, and has guaranteed to aim at accurately with stable; The contrast of the interference image that therefore, on image planes, obtains is higher.The spatial filtering of this photon screen phase contrast micro-imaging through photon screen phase contrast object lens converts the phase information of object into corresponding strength information, thereby improves the resolvability of transparent or weak absorption object.
In one embodiment; Photon screen lens 10 with the same mask body process that phase-changing plate 20 is arranged on this substrate 11 are: at first the one side in substrate 11 etches photon screen lens 10 through photoetching method, on photon screen lens 10, forms phase-changing plate 20 through electric plating method then.Perhaps when substrate 11 etchings form photon screen lens 10, cover the core of substrate 11, the core of the substrate 11 of covering forms phase-changing plate 20.In another embodiment, photon screen lens 10 and phase-changing plate 20 are arranged on the two sides of substrate 11.On the two sides of substrate 11, adopt the method etching of photoetching to obtain photon screen lens 10 and phase-changing plate 20.Be illustrated in figure 5 as a kind of implementation that on the two sides of substrate 11 etching forms photon screen lens 10 and phase-changing plate 20, but be not limited thereto.Substrate 11 is the piezoid of printing opacity; Chromium film 5 is set on the two sides of piezoid; Lithographic procedures through setting is carried out photoetching on chromium film 5; On the chromium film 5 on the one side of piezoid, form a plurality of light holes 12, light hole 12 constitutes photon screen lens 10 with substrate 11, again the chromium film on the another side of piezoid 5 is carried out photoetching and obtains phase-changing plate 20.Etching is easy to processing respectively on the two sides of substrate 11.The center of the center of assurance photon screen lens 10 and phase-changing plate 20 is on same axis in etching process.Utilize photoetching method to etch photon screen lens 10 and phase-changing plate 20 on the two sides of substrate 11 or with one side respectively, can aim at photon screen lens 10 and phase-changing plate 20 so more accurately.In addition, there are certain relation in the size of phase-changing plate 20 and the width of illumination beam, need obtain corresponding data according to concrete experiment.
The surface of substrate 11 can be the plane, shown in Fig. 2 A to Fig. 3 B, also can be curved surface, shown in Fig. 4 A and Fig. 4 B.The surface of substrate 11 adopts the plane to process easily, and suitable irradiates light is single wavelength light; When curved surface is adopted on the surface of substrate 11, can eliminate chromatic aberation preferably, light beam at ordinary times generally is complex light, and the surface of substrate 11 adopts curved surface more suitable.
Photon screen lens 10 and light hole 12 can be circle, regular polygon, oval or other is irregularly shaped etc.It is irregularly shaped etc. that phase-changing plate 20 can be circle, annular, ellipse, oval endless belt, regular polygon, regular polygon endless belt or other.When photon screen lens 10 be circular with light hole 12, phase-changing plate 20 can be circle, and perhaps other is irregularly shaped etc. also to can be annular, ellipse, oval ring band, regular polygon, regular polygon endless belt.When photon screen lens 10 are circular, be fit to be applied to most of optical equipments, be convenient to install, illumination is even when circular, and image contrast is better like this, and imaging effect is good.
Photon screen lens 10 can be a kind of in amplitude type photon screen, phase type photon screen and the achromatism photon sieve.The amplitude type photon screen is to be made up of the light hole according to the certain rule stochastic distribution on the lighttight substrate.The phase type photon screen is to be made up of the light hole according to the certain rule stochastic distribution on the substrate of printing opacity; Through selecting suitable backing material; Make light hole introduce the π phase shift, form incident light wave is carried out the pure phase place of phase modulation (PM), the diffraction optical element with high diffraction efficiency with respect to substrate.Achromatism photon sieve is to connect airtight one side on the plane of plano-convex refractor by photon screen, and the folding of formation spreads out and mixes achromatism photon sieve lens.
In addition, photon screen is based on pupil and cuts the toe principle, a kind of diffraction optical element that constitutes with the zonary structure of the big or small micro-nano transparent aperture array structures replacement zone plate of difference.Its diffraction structure is hole rather than endless belt, and this provides the more freedom degree for the optimal design of photon screen image device.It is the complex amplitude transmittance through the change pupil that pupil is cut toe, thereby changes the image quality of the point spread function of system with the improvement system.The basic thought of photon screen design is: according to given imaging technique index; Select suitable complex amplitude transmittance function; Make the diffraction pattern of pupil have the main lobe and minimum secondary lobe of narrow width; Just optimize number, pore size and the hole heart position distribution of photon screen light hole, the pupil of constitution optimization.The hole density of photon screen lens 10 should be uneven distribution, will produce high order diffraction if be symmetrically distributed fully, on image planes, forms background interference, and image quality is poor.Therefore when etching photon lens 10, adopt Gauss to cut toe and random function method, make it in substrate, form photon sieve aperture pockety.On the photon screen pupil plane hole density optimize distribution with each corresponding endless belt on the stochastic distribution in hole, suppressed sidelobes slackens axial high order diffraction effectively, improves image quality.Compare with zone plate, the resolution of photon screen no longer is decided by minimum diffraction structure characteristic dimension, has reduced the requirement to the minimum feature process technology; And photon screen is a rete element, do not need the supporting construction between each micro-nano hole of extra making.Compare with traditional zone plate, the photon screen device has better imaging capability and littler processing and manufacturing difficulty.
Be imaged as example with transparent substance below, the concrete processing procedure of photon screen phase contrast object lens imaging is described.At first, suppose that transparent substance causes phase shift variations φ<<2 π, and ignore the limited size of system pupil, FT [] and FT -1[] is the Fourier transform operator.So, the complex amplitude transmissivity of transparent substance can be expressed as
t(x,y)=exp[jφ(x,y)]≈1+jφ(x,y)。(I)
(I) " 1 " expression in first on formula equal sign the right is experienced the stronger bias light (being zero level frequency spectrum light) of even phase shift through object, and it is more weak from an axle diffraction light that the phase structure of second " j φ (x, y) " expression object produces.On image planes, do not observe the reason of the picture of transparent substance with simple microscope; Be because phase differential
Figure GSB00000750721500081
utilizes photon screen phase contrast object lens to change the PHASE DISTRIBUTION of object into intensity distributions and contrast distribution between the diffraction light that is produced by phase structure and the very strong bias light that is focused, thereby can obtain the picture of the high resolving power and the high contrast of transparent substance.
Object place the photon screen microcobjective object plane on, the spatial frequency spectrum of the transmission light field behind these object lens is distributed as
T(f x,f y)=FT[t(x,y)]=δ(f x,f y)+jΦ(f x,f y)。(II)
(II) in the formula, Φ (f x, f y)=FT [φ (x, y)].Place a phase-changing plate and make spatial filtering being close on the back surface of photon screen lens 10; It only works to the zero level frequency spectrum; Attenuation coefficient is α, and the frequency spectrum that phase delay can obtain participating in forming images for does
T F(f x,f y)=i[±αδ(f x,f y)+Φ(f x,f y)]。(III)
For convenience of calculation, the magnification of supposing imaging system is 1, and then the intensity distributions on the image planes does
I(x,y)=|FT -1[TF(f x,f y)] 2≈α 2±2αφ(x,y)。(IV)
(IV) formula shows that the PHASE DISTRIBUTION of intensity distributions and object of picture is linear.
The contrast of definition picture does C = I ( x , y ) - I B I B . Wherein, I BThe expression background intensity.Can get
C = ± 2 φ ( x , y ) α . - - - ( V ) (V) formula shows, the contrast that the PHASE DISTRIBUTION of object has been transformed into picture distributes, and chooses the contrast that little α can improve picture.A positive sign indicates a positive contrast, negative sign indicates a negative phase contrast; signed select depends on the zero-order spectrum, phase delay is
Figure GSB00000750721500091
or
Figure GSB00000750721500092
Above-mentioned photon screen phase contrast object lens imaging is applicable to the situation of X ray, ultraviolet light, visible light and infrared illumination.
Be illustrated in figure 6 as the manufacturing approach of photon screen phase contrast object lens among the embodiment, may further comprise the steps:
Step S60 provides a substrate.This substrate 11 can be light transmissive material or light-proof material.Shown in Fig. 2 A, Fig. 2 B, Fig. 4 A and Fig. 4 B, the surface of this substrate 11 can be plane or curved surface.The surface of substrate 11 adopts the plane to process easily, and suitable irradiates light is single wavelength light; When curved surface is adopted on the surface of substrate 11, can eliminate chromatic aberation preferably, light beam at ordinary times generally is complex light, and the surface of substrate 11 adopts curved surface more suitable.
Step S62, a plurality of light holes of etching in substrate are to form the photon screen lens.Shown in Fig. 2 A and Fig. 2 B,, form the photon screen lens according to a plurality of light holes of setting 12 of program etching in substrate 11.
Step S64 forms phase-changing plate at the photon screen lens surface, and makes phase-changing plate be positioned at the middle part of photon screen lens or be surrounded on the edge of photon screen lens, and the center of the center of phase-changing plate and photon screen lens is on same axis.
Through photoetching method on the same one side of substrate 11 or etch phase-changing plate 20 and photon screen lens 10 on the two sides.Guarantee that like this photon screen lens 10 and phase-changing plate 20 can accurately aim at.
The concrete steps that on the same one side of substrate 11, etch phase-changing plate 20 and photon screen lens 10 are: a plurality of light holes 12 of etching form photon screen lens 10 in substrate 11; Form phase-changing plate 20 on the surface of photon screen lens 10 through electric plating method again; And the center of assurance phase-changing plate 20 and the center of photon screen lens 10 are on same axis; Perhaps in substrate 11, during etching photon screen lens 10, cover the core of substrate 11, the core of the substrate 11 of covering forms phase-changing plate 20.The concrete steps that obtain photon screen lens 10 and phase-changing plate 20 in etching on the two sides of substrate 11 are: etching obtains photon screen lens 10 on the one side of substrate 11, and etching obtains phase-changing plate 20 on the another side of substrate 11.Be illustrated in figure 5 as a kind of implementation that on the two sides of substrate 11 etching forms photon screen lens 10 and phase-changing plate 20, but be not limited thereto.Substrate 11 is the piezoid of printing opacity; Chromium film 5 is set on the two sides of piezoid; Lithographic procedures through setting is carried out photoetching on chromium film 5; On the chromium film 5 on the one side of piezoid, form a plurality of light holes 12, light hole 12 constitutes photon screen lens 10 with substrate 11, again the chromium film on the another side of piezoid 5 is carried out photoetching and obtains phase-changing plate 20.Etching and processing easily, simply on the two sides of substrate 11.
Photon screen lens 10 and light hole 12 can be circle, regular polygon, oval or other is irregularly shaped etc.It is irregularly shaped etc. that phase-changing plate 20 can be circle, annular, ellipse, oval endless belt, regular polygon, regular polygon endless belt or other.When photon screen lens 10 are circular, be fit to be applied to most of optical equipments, be convenient to install, illumination is even when circular, and image contrast is better like this, and imaging effect is good.
In addition, a kind of in amplitude type photon screen, phase type photon screen and the achromatism photon sieve of the photon screen lens that obtain of etching 10.Be example with etching amplitude type photon screen below, the concrete grammar of making photon screen is described.This method comprises the steps:
(1) technical requirement of given photon screen: illumination light wavelength λ, focal distance f and entrance pupil diameter D;
(2) pupil function of optimal design photon screen;
(3) hole that calculates photon screen wants the light penetrating ring tape identification at the edge of substituted fresnel's zone plate to count N;
(4) according to the actual requirements, be principle to the maximum, confirm the pore size in each hole with the focus diffractional field;
(5) calculate the hole heart distance in each hole;
(6), confirm the light hole number on substituted each endless belt according to the photon screen pupil function of optimal design;
(7) angle of picked at random hole heart distance and pole axis is noted avoiding intersecting between the hole or overlapping, thereby confirms hole heart position coordinates;
(8) preserve into the ASCII fromat data file to the hole heart coordinate in each hole with pore size, computing machine converts this data files the input of CIF formatted file as laser direct writing system to, the processing photon screen.
Be illustrated in figure 7 as among the embodiment, a kind of formation method based on photon screen phase contrast object lens may further comprise the steps:
Step S70 obtains the transmitted light of irradiating object and the diffraction light that the object phase structure causes.These photon screen phase contrast object lens receive the diffraction light that the transmitted light that shines object and object phase structure cause.
Step S72 moves predetermined phase place with this transmitted light.Phase-changing plate 20 will shine the phase shift that the direct transmitted light of object is scheduled to, and make that phase differential is
Figure GSB00000750721500111
or
Figure GSB00000750721500112
between the diffraction light that this bundle causes through the phase structure of the transmitted light of phase shift and object
Step S74 is focused at the transmitted light after this phase shift and diffraction light and forms interference image on the image planes.The diffraction light that the phase structure of transmitted light and the object of photon screen phase contrast object lens after with phase shift causes is focused at interference imaging on the image planes.
Above-mentioned photon screen phase contrast object lens and formation method, imaging resolution and image contrast are high, adopt the photon screen lens can suppressed sidelobes and high order diffraction focus; Photon screen lens and phase-changing plate are etched in the same substrate and combine closely; And the center of photon screen lens and the center of phase-changing plate are on same axis; System architecture is simple; And aim at accurately, reduced time shutter and exposure dose simultaneously, can realize that the high imaging resolution of the inner microtexture of weak absorbing material becomes the image contrast lossless detection with height.
The above embodiment has only expressed several kinds of embodiments of the present invention, and it describes comparatively concrete and detailed, but can not therefore be interpreted as the restriction to claim of the present invention.Should be pointed out that for the person of ordinary skill of the art under the prerequisite that does not break away from the present invention's design, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with accompanying claims.

Claims (8)

1. photon screen phase contrast object lens; It is characterized in that; Comprise by substrate and be located at the formed photon screen lens of said suprabasil a plurality of light holes and be located at the phase-changing plate of said photon screen lens surface; Said phase-changing plate is positioned at the middle part of said photon screen lens or is surrounded on the edge of said photon screen lens, and the center of the center of said photon screen lens and phase-changing plate is on same axis.
2. photon screen phase contrast object lens according to claim 1 is characterized in that the surface of said substrate is plane or curved surface.
3. photon screen phase contrast object lens according to claim 1 is characterized in that, said photon screen lens are a kind of in amplitude type photon screen, phase type photon screen and the achromatism photon sieve.
4. photon screen phase contrast object lens according to claim 1 is characterized in that, said photon screen lens are circular, the annulus of justifying or be surrounded on the edge of said photon screen lens that is shaped as the middle part that is positioned at said photon screen lens of said phase-changing plate.
5. the manufacturing approach of photon screen phase contrast object lens may further comprise the steps:
One substrate is provided;
The a plurality of light holes of etching in said substrate are to form the photon screen lens;
Form phase-changing plate at said photon screen lens surface, and make said phase-changing plate be positioned at the middle part of said photon screen lens or be surrounded on the edge of said photon screen lens, the center of the center of phase-changing plate and photon screen lens is on same axis.
6. the manufacturing approach of photon screen phase contrast object lens according to claim 5 is characterized in that, said phase-changing plate is on said photon screen lens, to electroplate or photoetching formation.
7. the manufacturing approach of photon screen phase contrast object lens according to claim 5 is characterized in that, when etching forms said photon screen lens in said substrate, covers said substrate core, and said phase-changing plate is formed by said substrate core.
8. formation method based on photon screen phase contrast object lens may further comprise the steps:
One photon screen phase contrast object lens are provided; Said photon screen phase contrast object lens comprise by substrate and are located at the formed photon screen lens of said suprabasil a plurality of light holes and are located at the phase-changing plate of said photon screen lens surface; Said phase-changing plate is positioned at the middle part of said photon screen lens or is surrounded on the edge of said photon screen lens, and the center of the center of said photon screen lens and phase-changing plate is on same axis;
Said photon screen phase contrast object lens obtain the transmitted light of irradiating object and the diffraction light that the object phase structure causes;
Said phase-changing plate moves predetermined phase place with said transmitted light;
Transmitted light and the said diffraction light of said photon screen phase contrast object lens after with said phase shift is focused at and forms interference image on the image planes.
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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102998234B (en) * 2012-12-14 2015-03-25 江苏苏净集团有限公司 Micro liquid grain counter chip
CN104090318A (en) * 2014-07-24 2014-10-08 西华大学 Sub-wavelength photon sieve dispersion compensation device and method
CN104199135B (en) * 2014-09-18 2016-09-21 中国科学院光电技术研究所 A kind of Diode laser fanned partition photon screen for laser direct-writing
CN106772732B (en) * 2016-12-20 2019-05-03 中国科学院微电子研究所 A kind of diffraction grating
DE102017108873A1 (en) * 2017-04-26 2018-10-31 Carl Zeiss Microscopy Gmbh Phase-contrast imaging with transfer function

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003040805A2 (en) * 2001-11-08 2003-05-15 Lightsharp Llc Ghost image correction system and method
CN101614961A (en) * 2008-06-25 2009-12-30 中国科学院微电子研究所 Partial zonal photon sieve and preparation method thereof
CN101661225A (en) * 2008-08-27 2010-03-03 中国科学院微电子研究所 Phase-type zone plate photon sieve

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003040805A2 (en) * 2001-11-08 2003-05-15 Lightsharp Llc Ghost image correction system and method
CN101614961A (en) * 2008-06-25 2009-12-30 中国科学院微电子研究所 Partial zonal photon sieve and preparation method thereof
CN101661225A (en) * 2008-08-27 2010-03-03 中国科学院微电子研究所 Phase-type zone plate photon sieve

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
A.Sakdinawat1,Y.Liu.Phase contrast soft x-ray microscopy using Zernike zone plates.《OPTICS EXPRESS》.2008,第16卷(第3期),1559-1564. *
C.Chang etc..Single-element objective lens for soft x-ray differential interference contrast microscopy.《OPTICS LETTERS》.2006,第31卷(第10期),1564-1566. *
姜骥等.基于角谱法的振幅型光子筛的设计和分析.《光子学报》.2008,第37卷(第09期),1734-1738. *
李亚文等.光子筛的超分辨聚焦特性研究.《光电工程》.2009,第36卷(第03期),130-134. *
程冠晓等.微米孔阵列振幅型光子筛的设计和制作.《传感技术学报》.2006,第19卷(第05期),2344-2347,2350. *

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