CN101614961A - Partial zonal photon sieve and preparation method thereof - Google Patents

Abstract

The invention discloses a kind of partial zonal photon sieve, this partial zonal photon sieve is made of opening diffracting that is made on transparent medium and etching annulus, described opening diffracting is the opening diffracting of common photon screen when make forming common photon screen on transparent medium, described etching annulus is that the annulus position that etching forms on the endless belt that forms common photon screen opening diffracting fresnel's zone plate annulus is in addition encircled mutually after making the common photon screen of formation on the transparent medium.Utilize the present invention, realized the lifting again and the compression of main lobe size of the main spot energy of laser beam far field construction spot.

Description

Partial zonal photon sieve and preparation method thereof

Technical field

The present invention relates to shaping technique field, laser beam corrugated, particularly a kind ofly be used to realize that laser beam is at far field construction hot spot master spot energy lift and yardstick compressed portion girdle photon sieve and preparation method thereof.This partial zonal photon sieve can be used for beam shaping, microelectronics non-mask etching, light laser concentration of energy and other needs energy focusing in the various instruments of center spot.

Background technology

Carry out energy lift and yardstick compression for laser diffraction spot master spot by all means, and the energy of the other spot of inhibition is practical problem.Need energy focusing in the various instruments of center spot, all to need minimum main spot width and high main spot energy at beam shaping, microelectronics non-mask etching, light laser concentration of energy and other.

Thereby position phase modulation technique is to distribute mutually by the position that changes diffracted ray propagation cross section to realize the technology of expection diffraction intensity distribution.The method that is used to modulate has multiple, the phase board that has fixed bit to distribute mutually, also the modulation sheet that can be distributed mutually by the Control of Voltage position made of using light electric crystal.Because the utilization ratio of diffraction phase board luminous energy is the highest, so the most frequently used.

So-called photon screen is a kind of novel focal imaging diffraction optical device, utilizes it to focus on and imaging X-ray, and this is that the image optics device of general prism and glass material can't be realized.Photon screen is compared with traditional optical element Fresnel zone plate, has advantages such as high resolving power and inhibition second-order diffraction principal maximum, can improve the contrast of imaging.And, as novel diffraction element, advantages such as volume is little, in light weight, transreplication that it has.

Photon screen can be applied to high resolution microscope, astronomical telescope, photoetching of future generation, the controlled nuclear fusion of laser (ICF) research etc.

In calendar year 2001, Kipper et al. has proposed a kind of novel diffraction optical device first: photon screen, come grenz ray and EUV radiating light source are focused on and imaging [Kipp with it, L., Skibowski, M., Johnson, R.L., Berndt, R., Adelung, R., Harm, S., and Seemann, R.Sharperimages by focusing soft X-ray with photon sieves.Nature[J], 2001.414,184-188.].

Gil and Menon in 2003 is reported in " beam flying photoetching " and (ZPAL) substitutes zone plate [Menon with photon screen in the system, R., Gil, D.Barbastathis, G., and Smith, H.I.Photon-sieve lithography[J] .Opt.Soc.Am.A, 2005.22 (2), 342-345.].

After this, because the superior performance that photon screen itself has, people are more and more interested in it, and it is applied to various new research fields, as EUV telescope around solar satellite, [S.Wang and X.Zhang.Terahertz tomographic imaging with aFresnel lens[J] .Opt.Photon.2002.News 13,59 such as THZ ripple holography].

Photon screen (Photon Sieve, PS) be the diffraction optical elements of on the Fresnel zone ring, making a large amount of transparent micropores that suitably distribute with different radii (Diffraction Optical Element, DOE).

Photon screen has good application in the focusing of grenz ray, extreme ultraviolet line and imaging, can be applicable to fields such as high resolving power microscopy, spectroscopy, photoetching of future generation.Replace fresnel's zone plate Fresnel zone plate (FZP) that grenz ray is focused on and imaging with photon screen (PS), can obtain higher resolution, reduce requirement the photoetching technique manufacture craft.But the hot spot mainboard energy that photon screen focuses on can be done further lifting.

The phase-type fresnel's zone plate is the fresnel's zone plate with relief surface structure.The thickness of embossment is in wavelength magnitude, and figure should can be realized the high diffraction efficiency of expecting as far as possible near design load.[referring to binary optical, Jin nation Pan, Yan Yingbai, Wu Minxian, chapter 4]

We define central energy than being the energy of the energy of diffractional field central authorities main lobe divided by whole diffractional fields.It can characterize central main lobe energy concentration degree.The definition first zero is the position at the energy-minimum place between the main lobe and first secondary lobe.Its position can characterize the size of central mainboard.

Summary of the invention

(1) technical matters that will solve

In view of this, fundamental purpose of the present invention is to provide a kind of partial zonal photon sieve and preparation method thereof, with the lifting again and the compression of main lobe size of the main spot energy of realizing laser beam far field construction spot.

(2) technical scheme

For achieving the above object, the invention provides following technical scheme:

A kind of partial zonal photon sieve, this partial zonal photon sieve is made of opening diffracting that is made on transparent medium and etching annulus, described opening diffracting is the opening diffracting of common photon screen when make forming common photon screen on transparent medium, described etching annulus is that the annulus position that etching forms on the endless belt that forms common photon screen opening diffracting fresnel's zone plate annulus is in addition encircled mutually after making the common photon screen of formation on the transparent medium.

In the such scheme, the size of this partial zonal photon sieve and the sizableness of described common photon screen, the diameter of described opening diffracting are contiguous and away from 1.5 times of the width of endless belt on this partial zonal photon sieve center position, the transmittance of opening diffracting is 1 with it.

In the such scheme, described etching annulus is that the annulus position that etching forms on the endless belt of the odd loop of fresnel's zone plate annulus on the transparent medium or even loop is encircled mutually, and the etching position of endless belt is π mutually; Odd loop or even loop are decided by the position odd even of common photon screen opening diffracting; The part that diffracted hole occupies on the endless belt is etching not, and the position still is 0 mutually.

In the such scheme, described opening diffracting and etching annulus constitute the light transmission part of this partial zonal photon sieve jointly, and the remainder of this partial zonal photon sieve is light tight.

In the such scheme, the position of same endless belt value mutually is identical, all is π, and the position of opening diffracting is 0 mutually.

A kind of method of making partial zonal photon sieve, this method utilize lsi technology technology and plane photoetching process technology to realize that this method comprises:

Utilize the electron-beam direct writing legal system to make mother matrix;

Master pattern is transferred on the optical glass that scribbles photoresist by the contact photolithography method;

Utilize the inductive couple plasma lithographic technique, will move on to pattern etch on the optical glass photoresist in optical glass, form partial zonal photon sieve.

In the such scheme, describedly master pattern is transferred in the step on the optical glass that scribbles photoresist by the contact photolithography method, the error of repelication of described contact Loss-on-drying light is less than 0.5 μ m, and the photoresist that is adopted is Shipley s1818, and thickness is 1.8 μ m.

In the such scheme, in the described step of pattern etch in the optical glass that will move on on the optical glass photoresist, the etching gas that is adopted is fluoroform CHF ₃, flow is 30SCCM, and RF power is 500W, and bias power is 200W, is 0.077 μ m/min to the etch rate of quartz substrate.

(3) beneficial effect

Partial zonal photon sieve provided by the invention, be that circular aperture by the common photon screen diffraction of control break is that opening diffracting adds the etching annulus, make collimation parallel laser form of the center master spot energy raising of center master's spot in the far field than photon screen diffraction by it, the optical field distribution that reduces of main lobe size simultaneously, and then realized the lifting again and the compression of main lobe size of the main spot energy of laser beam far field construction spot.The present invention combines the high-diffraction efficiency of phase-type fresnel's zone plate and emerging photon screen, realized that photon screen focuses on the light distribution that the main spot energy of diffraction improves again, promptly realized the raising again of the main spot energy of laser beam far field construction spot, this be traditional photon screen can't realize that this also is that traditional phase-type fresnel's zone plate institute is irrealizable.

Description of drawings

Fig. 1 is 50 common ring photon screen synoptic diagram, and diffraction element is circular diffraction aperture;

Fig. 2 is the synoptic diagram of the 108 loop section girdle photon sieve structures of one of girdle photon sieve embodiment of the present invention, and diffraction element is the endless belt of opening diffracting and etching;

Fig. 3 is the partial zonal photon sieve based on 10 ring fresnel's zone plates provided by the invention; Among the figure black be etching the position be the diffraction ring of π mutually, white is opening diffracting, grey is lighttight part;

Fig. 4 is diffraction intensity and the diffraction intensity of the common photon screen of 108 rings and the comparison diagram of radial distance of 108 loop section girdle photon sieves.We see the central energy ratio among the figure, and common photon screen is 0.9592, and first zero position is 9, and the central energy of partial zonal photon sieve ratio is 0.9802, and first zero position is 7.And under identical incident light situation, the diffraction intensity peak value of partial zonal photon sieve is 8 times of common photon screen approximately, has greatly increased the luminous energy of diffractional field;

Fig. 5 is the experiment pick-up unit synoptic diagram of partial zonal photon sieve.

Embodiment

For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.

Partial zonal photon sieve is a kind of novel diffraction optics phase part, is called phase board again.This partial zonal photon sieve is positioned over before or after the diffraction limit lens, and laser beam far field construction hot spot spectrum light intensities at different levels are revised, and realizes the diffraction center diffraction spot more concentrated than the diffraction center spot energy of common photon screen.

Opening diffracting that partial zonal photon sieve of the present invention adopts and position replace single opening diffracting of justifying of common photon screen mutually for the etching annulus of π.The position of opening diffracting and etching annulus is consistent with common photon screen with population size.The present invention has provided the project organization of opening diffracting and etching annulus, and has carried out relevant simulated experiment.Experimental verification adopt partial zonal photon sieve can realize the further lifting of laser beam far field main spot energy.The technology of the present invention can be used for beam shaping, microelectronics non-mask etching, light laser concentration of energy and other needs energy focusing in the various instruments of center spot.

This partial zonal photon sieve provided by the invention, constitute by opening diffracting that on transparent medium, is made and etching annulus, described opening diffracting is the opening diffracting of common photon screen when make forming common photon screen on transparent medium, described etching annulus is that the annulus position that etching forms on the endless belt that forms common photon screen opening diffracting fresnel's zone plate annulus is in addition encircled mutually after making the common photon screen of formation on the transparent medium.

The size of this partial zonal photon sieve and the sizableness of described common photon screen, the diameter of described opening diffracting are contiguous and away from 1.5 times of the width of endless belt on this partial zonal photon sieve center position, the transmittance of opening diffracting is 1 with it.

Described etching annulus is that the annulus position that etching forms on the endless belt of the odd loop of fresnel's zone plate annulus on the transparent medium or even loop is encircled mutually, and the etching position of endless belt is π mutually; Odd loop or even loop are decided by the position odd even of common photon screen opening diffracting; The part that diffracted hole occupies on the endless belt is etching not, and the position still is 0 mutually.

Described opening diffracting and etching annulus constitute the light transmission part of this partial zonal photon sieve jointly, and the remainder of this partial zonal photon sieve is light tight.The position of same endless belt value mutually is identical, all is π, and the position of opening diffracting is 0 mutually.

Fig. 2 is the synoptic diagram of the 108 loop section girdle photon sieve structures of one of girdle photon sieve embodiment of the present invention, and etching annulus position is π mutually, the black among the figure, and the opening diffracting position is 0 mutually, the white among the figure.All the other grey color parts are light tight.If the position of opening diffracting and etching annulus has only two values mutually on all phase boards, 0 and π, just be called two-value position phase partial zonal photon sieve.

Two-value phase board (binary phase-only mask).So-called endless belt is meant that it is donut that the position of phase board distributes mutually, and the partial zonal photon sieve characterising parameter has

1) central energy of partial zonal photon sieve ratio: the coherent light of collimation passes through girdle photon sieve, in the diffractional field that is produced, and the energy ratio of main spot and total diffractional field.Ratio is high more, illustrates that the energy of main spot gathering is many more.

2) first zero of partial zonal photon sieve: the first zero is minimizing position between the main spot and first diffraction maximum.Be worth greatly more, illustrate that main spot chassis is big more.Be worth more for a short time, illustrate that main spot chassis is more little.

By the conclusion of diffraction optics angular spectrum as can be known:

Be located at and introduce an infinitely-great opaque screen that includes the photon screen structure on the z=0 plane, desirable plane wave impinges upon on the photon screen.The transmittance function of photon screen is:

$E(x,y,0)=\left\{\begin{array}{cc}1& {(x-x_{\mathrm{ij}})}^2+{(y-y_{\mathrm{ij}})}^2\≤r_i^2\\ 0& \mathrm{other}\end{array}\right.---\left(1\right)$

In (1), xij, yij represent micropore central coordinate of circle on the wavestrip, i=1, and 2......n, (n is the zone plate number of rings) j=1,2 ... m (m is the number cells on the respective rings).E (x, y, 0) through the two-dimensional space discrete Fourier transformation obtain the angular spectrum F0 of incident light on diffraction screen (fx, fy0).

$E(f_x,f_Y,0)=\underset{-\&infin;}{\overset{\&infin;}{\&Integral;}}\underset{-\&infin;}{\overset{\&infin;}{\&Integral;}}E(x,y,0)\exp [-\mathrm{<figure-callout\; id="2"\; label="j"\; filenames="A2008101155620017H1.png"\; state="\{\{state\}\}">j</figure-callout>}2\mathrm{\&pi;}(f_{X}x+f_{Y}y)]\mathrm{dxdy}---\left(2\right)$

In (2), f _X, f _YBe spatial frequency, $f_X=\frac{\mathrm{\&alpha;}}{\mathrm{\&lambda;}},$ $f_Y=\frac{\mathrm{\&beta;}}{\mathrm{\&lambda;}}$ (α, β are wave vectors

With X-axis, the angle between the Y-axis).Incident light is propagated along the Z direction through behind the photon screen.At the Z=z place, the frequency spectrum E. of spatial frequency (fX, fY z) are:

$E(f_X,f_Y,z)=E(f_X,f_Y,0)\exp (\mathrm{<figure-callout\; id="2"\; label="j"\; filenames="A2008101155620017H1.png"\; state="\{\{state\}\}">j</figure-callout>}2\mathrm{\&pi;}\sqrt{\frac{1}{{\mathrm{\&lambda;}}^2}-f_X^2-{\mathrm{<figure-callout\; id="2"\; label="f\; Y"\; filenames="A2008101155620017H1.png"\; state="\{\{state\}\}">f</figure-callout>}}_Y^{}}.z)---\left(3\right)$

In (3), f _X, f _YMust satisfy condition $f_{\mathrm{<figure-callout\; id="2"\; label="X"\; filenames="A2008101155620017H1.png"\; state="\{\{state\}\}">X</figure-callout>}}^2+{\mathrm{<figure-callout\; id="2"\; label="f\; Y"\; filenames="A2008101155620017H1.png"\; state="\{\{state\}\}">f</figure-callout>}}_Y^{}\&le;1/{\mathrm{\&lambda;}}^2,$ This formula shows that the effect of propagating the z of a segment distance has just changed the relative phase of each angular spectrum component.But work as ${\mathrm{<figure-callout\; id="2"\; label="f\; X"\; filenames="A2008101155620017H1.png"\; state="\{\{state\}\}">f</figure-callout>}}_X^{}+{\mathrm{<figure-callout\; id="2"\; label="f\; Y"\; filenames="A2008101155620017H1.png"\; state="\{\{state\}\}">f</figure-callout>}}_Y^{}\&le;1/{\mathrm{\&lambda;}}^2$ The time, (fX, fY z) are the frequency spectrum E. of spatial frequency

E(f _X，f _Y，z)＝E(f _X，f _Y，0)exp(-μz)????????????(4)

In (4), $\mathrm{\&mu;}=\frac{2\mathrm{\&pi;}}{\mathrm{\&lambda;}}\sqrt{{\left(\frac{x}{z}\right)}^2+{\left(\frac{y}{z}\right)}^2-1}.$

Because μ is an arithmetic number, these wave components increase decay rapidly because of propagation distance.(4) formula is done inverse Fourier transform, obtain light wave amplitude E (x, y, z)

$E(x,y,z)={\&Integral;}_{-\&infin;}^{\&infin;}{\&Integral;}_{-\&infin;}^{\&infin;}E(f_X,f_Y,0)\exp (\mathrm{<figure-callout\; id="2"\; label="j"\; filenames="A2008101155620017H1.png"\; state="\{\{state\}\}">j</figure-callout>}2\mathrm{\&pi;}\sqrt{\frac{1}{{\mathrm{\&lambda;}}^2}-f_X^2-{\mathrm{<figure-callout\; id="2"\; label="f\; Y"\; filenames="A2008101155620017H1.png"\; state="\{\{state\}\}">f</figure-callout>}}_Y^{}}.z)\exp \left[\mathrm{<figure-callout\; id="2"\; label="j"\; filenames="A2008101155620017H1.png"\; state="\{\{state\}\}">j</figure-callout>}2\mathrm{\&pi;}(f_{X}x+f_{Y}y)\right]d{f}_{X}d{f}_Y---\left(5\right)$

It more than is the diffraction theory of common photon screen.At partial zonal photon sieve, what need modification is exactly each transmittance function.Become circular hole by the circular aperture of complete printing opacity and add annulus phase-type diffraction element.

The present invention has provided the design parameter of partial zonal photon sieve.We have provided the comparison curves of the central energy ratio and the first zero in Fig. 4.We have selected the common photon screen of 108 rings and the partial zonal photon sieve of 108 rings.The reason of Xuan Zeing is that this two device has identical minimum diffraction element size like this, promptly identical minimum outer shroud radius and smallest circle hole dimension.This is size-constrained in the live width of microelectronic processing technology.

Two kinds of phase board diffraction relatively are shown in the table 1.The central energy ratio of common photon screen is 0.9592.As shown in Figure 4, partial zonal photon sieve lifting by a relatively large margin main spot diffraction intensity peak value, and make encircled energy increase, main lobe diminishes.

	Based on fresnel's zone plate number of rings (F)	The central energy ratio	The first zero (unit diffractional field point)
				Common photon screen	??108	??0.9592	??9
Partial zonal photon sieve	??108	??0.9802	??7

Table 1

Partial zonal photon sieve of the present invention in the application of reality as shown in Figure 5.The 1st, collimation laser device, the 2nd, condenser lens, the 3rd, partial zonal photon sieve of the present invention, the 4th, CCD photodetector.Light process condenser lens 2 and girdle photon sieve 3 from collimation laser 1 sends produce main spot diffractogram on the focal plane of condenser lens 2.Such diffraction master spot intensity distributions can be detected and confirmed it by the ccd detector on the focal plane that is placed on condenser lens 24.

After experimental results show that the designed partial zonal photon sieve of adding, realized the further lifting of far field construction hot spot main lobe energy than the main spot energy of common photon screen really, main lobe diminishes.This explanation the present invention can be used for beam shaping, microelectronics non-mask etching, light laser concentration of energy and other needs energy focusing in the various instruments of center spot.

The method of this making partial zonal photon sieve that the present invention also provides, this method utilize lsi technology technology and plane photoetching process technology to realize, specifically may further comprise the steps:

Step 1, utilize the electron-beam direct writing legal system to make mother matrix;

Step 2, master pattern is transferred on the optical glass that scribbles photoresist by the contact photolithography method;

Step 3, utilize the inductive couple plasma lithographic technique,, form partial zonal photon sieve moving on to pattern etch on the optical glass photoresist in optical glass.

Above-mentioned fabrication portion girdle photon sieve utilizes lsi technology technology and plane photoetching process technology to realize.At first, utilize the electron-beam direct writing legal system to make mother matrix, by the contact photolithography method, master pattern has been transferred on the optical glass that scribbles photoresist.The photoresist that is adopted is Shipley s1818, and thickness is 1.8 μ m.The error of repelication of contact Loss-on-drying light is less than 0.5 μ m.Each parameter of partial zonal photon sieve provides in preamble.At last, utilize the inductive couple plasma lithographic technique, with pattern etch in optical glass.The etching gas that is adopted is fluoroform (CHF ₃), flow is 30SCCM, and RF power is 500W, and bias power is 200W, is 0.077 μ m/min to the etch rate of quartz substrate.Corresponding to 0.6328 mum wavelength, the refractive index of optical glass is 1.521, thereby the corresponding degree of depth in π position is 0.607 μ m.The degree of depth of utilizing Taylor's contourgraph to measure circular ring type photon screen is 0.607 μ m.Light path synoptic diagram according to Fig. 5 arranges the measurement light path. and the laser works wavelength is 632.8nm.Expand bundle, collimation then.In experiment, the photon screen focal length is 100 millimeters placement part girdle photon sieves, places ccd detector, the considerable thus size of measuring diffraction pattern then at the focal beam spot place.Measured data has proved the correctness of Theoretical Calculation.

Partial zonal photon sieve with one 108 ring is an example below, describes its method for making:

1, determines optical maser wavelength and photon screen focal length, number of rings;

2, according to the definite common photon screen that will make of need of work; The circle hole radius of common photon screen is 1.5 times of corresponding Fresnel annular radii.

3, encircle mutually according to the position of all the other endless belt of method etching as herein described.

4, make girdle photon sieve.

Suppose that optical maser wavelength is 6328 nanometers, focal length is 100 millimeters, and number of rings is 108 rings.Always have 8222 micropores.Suppose micropore at fresnel's zone plate even number endless belt, the radius of micropore is (unit: micron) from big to small:

78.1482????50.5530????40.2655????34.4648????30.6163????27.8239????25.6786

23.9638????22.5522????21.3640????20.3458????19.4606????18.6817????17.9894

17.3688????16.8083????16.2987????15.8329????15.4049????15.0098????14.6436

14.3030????13.9851????13.6875????13.4081????13.1452????12.8971????12.6626

12.4404????12.2295????12.0290????11.8381????11.6559????11.4819????11.3155

11.1561????11.0033????10.8566????10.7156????10.5799????10.4493????10.3234

10.2020????10.0847????9.9714?????9.8618?????9.7557??????9.6530????9.5535

9.4570?????9.3634?????9.2725?????9.1842

The position of etching position phase annulus is at the fresnel's zone plate of odd loop, be respectively (unit: micron):

0.3558-0.4357????0.5031-0.5625????0.6162-0.6656????0.7115-0.7547

0.7955-0.8343????0.8714-0.9070????0.9412-0.9743????1.0062-1.0372

1.0673-1.0965????1.1250-1.1528????1.1799-1.2064????1.2324-1.2578

1.2827-1.3071????1.3311-1.3547????1.3778-1.4006????1.4230-1.4451

1.4668-1.4882????1.5093-1.5302????1.5507-1.5710????1.5910-1.6107

1.6303-1.6496????1.6686-1.6875????1.7061-1.7246????1.7428-1.7609

1.7788-1.7965????1.8140-1.8313????1.8485-1.8656????1.8825-1.8992

1.9158-1.9322????1.9485-1.9647????1.9807-1.9967????2.0124-2.0281

2.0436-2.0591????2.0744-2.0896????2.1047-2.1196????2.1345-2.1493

2.1640-2.1785????2.1930-2.2074????2.2217-2.2359????2.2500-2.2640

2.2779-2.2918????2.3055-2.3192????2.3328-2.3464????2.3598-2.3732

2.3865-2.3997????2.4128-2.4259????2.4389-2.4519????2.4647-2.4775

2.4903-2.5029????2.5156-2.5281????2.5406-2.5530????2.5654-2.5777

2.5899-2.6021

In addition, the part that is covered by circular hole in ring etching not.

Above-described concrete embodiment has carried out further detailed explanation to purpose of the present invention, technical scheme and beneficial effect.Institute it should be understood that the above only for concrete embodiment of the present invention, is not limited to the present invention.All any modifications of being made within the spirit and principles in the present invention, be equal to and replace or improvement etc., all should be included within protection scope of the present invention.

Claims (8)

1, a kind of partial zonal photon sieve, it is characterized in that, this partial zonal photon sieve is made of opening diffracting that is made on transparent medium and etching annulus, described opening diffracting is the opening diffracting of common photon screen when make forming common photon screen on transparent medium, described etching annulus is that the annulus position that etching forms on the endless belt that forms common photon screen opening diffracting fresnel's zone plate annulus is in addition encircled mutually after making the common photon screen of formation on the transparent medium.

2, partial zonal photon sieve according to claim 1, it is characterized in that, the size of this partial zonal photon sieve and the sizableness of described common photon screen, the diameter of described opening diffracting is contiguous and away from 1.5 times of the width of endless belt on this partial zonal photon sieve center position, the transmittance of opening diffracting is 1 with it.

3, partial zonal photon sieve according to claim 1 is characterized in that, described etching annulus is that the annulus position that etching forms on the endless belt of the odd loop of fresnel's zone plate annulus on the transparent medium or even loop is encircled mutually, and the etching position of endless belt is π mutually; Odd loop or even loop are decided by the position odd even of common photon screen opening diffracting; The part that diffracted hole occupies on the endless belt is etching not, and the position still is 0 mutually.

4, partial zonal photon sieve according to claim 1 is characterized in that, described opening diffracting and etching annulus constitute the light transmission part of this partial zonal photon sieve jointly, and the remainder of this partial zonal photon sieve is light tight.

5, partial zonal photon sieve according to claim 1 is characterized in that, the position of same endless belt value mutually is identical, all is π, and the position of opening diffracting is 0 mutually.

6, a kind of method of making partial zonal photon sieve, this method utilize lsi technology technology and plane photoetching process technology to realize, it is characterized in that this method comprises:

Utilize the electron-beam direct writing legal system to make mother matrix;

Master pattern is transferred on the optical glass that scribbles photoresist by the contact photolithography method;

Utilize the inductive couple plasma lithographic technique, will move on to pattern etch on the optical glass photoresist in optical glass, form partial zonal photon sieve.

7, the method for making partial zonal photon sieve according to claim 6, it is characterized in that, describedly master pattern is transferred in the step on the optical glass that scribbles photoresist by the contact photolithography method, the error of repelication of described contact exposure is less than 0.5 μ m, the photoresist that is adopted is Shipleys1818, and thickness is 1.8 μ m.

8, the method for making partial zonal photon sieve according to claim 6 is characterized in that, in the described step of pattern etch in the optical glass that will move on on the optical glass photoresist, the etching gas that is adopted is fluoroform CHF ₃, flow is 30SCCM, and RF power is 500W, and bias power is 200W, is 0.077 μ m/min to the etch rate of quartz substrate.

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