CN102053294A - Interlaced type photon sieve - Google Patents
Interlaced type photon sieve Download PDFInfo
- Publication number
- CN102053294A CN102053294A CN 201110025563 CN201110025563A CN102053294A CN 102053294 A CN102053294 A CN 102053294A CN 201110025563 CN201110025563 CN 201110025563 CN 201110025563 A CN201110025563 A CN 201110025563A CN 102053294 A CN102053294 A CN 102053294A
- Authority
- CN
- China
- Prior art keywords
- endless belt
- aperture
- photon screen
- even number
- odd number
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses an interlaced type photon sieve, which comprises a transparent medium, a metallic layer and a superfine structure, wherein the metallic layer is prepared on the transparent medium; the required superfine structure is formed on the metallic layer by etching; the superfine structure comprises a plurality of small holes with different radiuses which are annularly distributed on a plurality of odd annular bands and a plurality of even annular bands; the ratios of the diameters of the small holes on the even and odd annular bands to the width of the located annular band are different; amplitude signs of diffraction optical waves of the small holes on the even and odd annular bands at a focal point are reverse; the small holes on the even and odd annular bands have constructive interference at the focal point; smaller light spots are acquired; and the photon sieve size is increased under the same condition of minimum processing size. Through the interlaced type photon sieve provided by the invention, the size of the main spot formed by the focusing diffraction of the photon sieve can be efficiently compressed and the resolution ratio of an optical system can be increased.
Description
Technical field
The present invention relates to the diffraction optical element field, be specifically related to a kind of type photon screen that interweaves.
Background technology
Calendar year 2001, German kipp professor proposes the notion of photon screen first on the nature magazine, photon screen can reflect in tradition as a kind of novel diffraction element, the helpless grenz ray of reflective optical devices, zone focusing of extreme ultraviolet spectrum and imaging, thus people's extensive concern caused.Photon screen is based on zone plate, with the bright ring on a large amount of apertures replacement zone plates.Compare the conventional wave strap, photon screen more effective suppressed sidelobes effect of energy and high order diffraction, and can under the condition of same minimum process size, obtain bigger bore, thus improve the systemic resolution rate.For further improving photon screen resolution, people have proposed many distinct methods, the phase type photon screen is exactly one of them, yet, when conventional phase type photon screen distributes at the phase differential of realizing π, make very complicated, increased difficulty of processing, how easy realization photon screen π phase differential distributes, and improves optical system resolution, and being still people has problem to be solved.
Summary of the invention
The problem that the prior art that the objective of the invention is to solve exists, be under the situation of identical minimum process size, increase the photon screen aperture improving its resolution, and improve its focal beam spot master spot energy simultaneously, the present invention proposes a kind of type photon screen that interweaves for this reason.
In order to realize described purpose, the present invention's technical scheme that type photon screen technical solution problem adopted that proposes to interweave comprises transparent medium, metal level and microtexture, preparation has metal level on transparent medium, and on metal level, etch required microtexture and process, described microtexture is made up of a plurality of apertures that are in the different radii on a plurality of odd number endless belt and a plurality of even number endless belt that ring-band shape distributes, have different ratios between the diameter that is in the aperture on even number and the odd number endless belt and the endless belt bandwidth of living in, the diffraction light wave of aperture is at the amplitude opposite in sign at focus place on even number and odd number endless belt, and the aperture on even number endless belt and the odd number endless belt has constructive interference on focus.
The invention has the beneficial effects as follows:
The hole diameter that is on the present invention's photon screen on odd number endless belt and the even number endless belt is set to different value with ratio between the corresponding bandwidth, thereby simply realize on the odd even endless belt, the complex amplitude opposite in sign of aperture diffraction light wave, make the aperture on the odd and even number endless belt that constructive interference take place on the focal plane, generation improves systemic resolution than small light spot.
The present invention since the maximum ratio between hole diameter and the corresponding endless belt bandwidth greater than traditional photon screen, therefore, under the condition of identical minimum process size, can obtain more bigbore photon screen, thereby further improve systemic resolution.
Description of drawings
Fig. 1 is the type photon screen structural representation that interweaves;
Fig. 2 is the type photon screen aperture distribution schematic diagram that interweaves;
Fig. 3 is under the condition of identical minimum process size, the embodiment of the invention, and partitioning type photon screen, and common photon screen, on the focal plane, radial direction, normalization light intensity comparison diagram.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is described further.
Present embodiment as shown in Figure 1, the type that interweaves photon screen is by plating metal level 3 on transparent medium 4, and etches required microtexture process on metal level 3.Preparation has metal level 3 on transparent medium 4, and on metal level 3, etch required microtexture and process, described microtexture is made up of a plurality of apertures 1 and 2 that are in the different radii on a plurality of odd number endless belt and a plurality of even number endless belt that ring-band shape distributes, and the diameter that is in the aperture on even number and the odd number endless belt is different with the ratio between the endless belt bandwidth of living in; Make the amplitude opposite in sign of the diffraction light wave of aperture on even number and the odd number endless belt by the ratio that is provided with between hole diameter and the endless belt bandwidth, thereby make the aperture on even number endless belt and the odd number endless belt that constructive interference take place on focus at the focus place.
Each aperture center and transparent medium 4 centers apart from r
nSatisfy formula
F is the photon screen focal length, and λ is by being used optical wavelength, and n is 1/2 even-multiple, and then aperture is positioned at the even number endless belt, and n is 1/2 odd-multiple, and then aperture is positioned at the odd number endless belt, and the corresponding endless belt bandwidth of aperture is
Each hole diameter is
K be small aperture with corresponding endless belt bandwidth between ratio, the little number of perforations on each endless belt is
Function f (r
n) be with r
nThe density function that changes.
Described aperture comprises that first aperture 1 and second aperture, 2, the first apertures 1 and second aperture 2 are amplitude type apertures.
Small aperture and ratio k between the corresponding endless belt bandwidth comprise that the diameter that is in a plurality of first apertures 1 on a plurality of even number endless belt and the ratio between the endless belt bandwidth are that k1 and the diameter that is in a plurality of second apertures 2 on a plurality of odd number endless belt and the ratio between the endless belt bandwidth are k2, have first-order bessel function J respectively on a plurality of even number endless belt with on a plurality of odd number endless belt
1() is expressed as:
By different ratio k 1 and k2 are set, make aperture diffraction light wave on odd number endless belt and the even number endless belt at the amplitude opposite in sign at focus place, thereby make the aperture on odd number endless belt and the even number endless belt that constructive interference take place on focus.Odd number endless belt outermost ring hole diameter and even number endless belt outermost ring hole diameter are all more than or equal to the minimum process size.
In the present embodiment, minimum microfabrication width dx is 0.6 μ m, and focal distance f is 100 μ m, and incident wavelength λ is 335nm, and transparent medium is a glass, and the metal level that is coated with is the chromium layer.
As shown in Figure 2, the microtexture of compound photon screen is made up of a plurality of first apertures 1 on a plurality of even number endless belt and a plurality of second apertures 2 on a plurality of odd number endless belt.Wherein, the diameter of a plurality of first apertures 1 on the even number endless belt is 1.5 with ratio k 1 between the corresponding endless belt bandwidth, and the diameter of a plurality of second apertures 2 on the odd number endless belt is 3.5 with ratio k 2 between the corresponding endless belt strap bandwidth.
A plurality of first apertures 1 on the even number endless belt, the distance at its aperture centre distance photon screen transparent medium 4 centers is by formula
Determine, for avoiding a plurality of first apertures 1 on a plurality of even number endless belt overlapping with a plurality of second apertures 2 on a plurality of odd number endless belt, n
1=1,4 ... n
1maxBecause the minimum process of the aperture on a plurality of odd number endless belt of photon screen and the even number endless belt is of a size of 0.6 μ m, the upper limit endless belt of even number endless belt correspondence is counted n
1maxBe 25.First aperture, 1 diameter by
Determine.
A plurality of first aperture centre distance photon screen centre distances among the embodiment on a plurality of even number endless belt are respectively: (unit micron):
8.1922 | 16.4255 | 21.7830 | 26.1002 | 29.8323 |
33.1772 | 36.2424 | 39.0937 | 41.7749 |
The corresponding diameter of a plurality of first apertures on a plurality of even number endless belt is respectively: (unit micron):
3.0669 | 1.5296 | 1.1534 | 0.9626 | 0.8422 |
0.7573 | 0.6932 | 0.6427 | 0.6014 |
The corresponding diameter of above-mentioned a plurality of first aperture centre distance photon screen centre distances and a plurality of first aperture can also have various embodiments, does not repeat them here.
The distance at a plurality of second aperture, 2, the second apertures, 2 centre distance photon screen transparent mediums 4 centers among the embodiment on the odd number endless belt is by formula
Determine, for avoiding a plurality of second apertures 2 on the odd number endless belt overlapping with a plurality of first apertures 1 on the even number endless belt, n
2=2.5,5.5 ... 26.5,28.5 ... n
2max, in this example, the upper limit endless belt of odd number endless belt correspondence is counted n
2maxBe 142.5.Second aperture, 2 diameters by
The distance at a plurality of second apertures 2 centre distance photon screen centers on preceding 20 odd number endless belt is respectively (unit micron):
12.9692 | 19.2846 | 24.0335 | 28.0239 | 31.5451 |
34.7400 | 37.6917 | 40.4534 | 43.0617 | 44.7287 |
46.3454 | 47.9170 | 49.4477 | 50.9413 | 52.4008 |
53.8291 | 55.2287 | 56.6015 | 57.9496 | 59.2746 |
A plurality of second aperture, 2 diameters on preceding 20 odd number endless belt are respectively (unit micron):
4.5203 | 3.0400 | 2.4393 | 2.0920 | 1.8584 |
1.6875 | 1.5554 | 1.4492 | 1.3614 | 1.3107 |
1.2650 | 1.2235 | 1.1856 | 1.1508 | 1.1188 |
1.0891 | 1.0615 | 1.0357 | 1.0117 | 0.9890 |
Second aperture, 2 numbers on a plurality of odd number endless belt and a plurality of even number endless belt are
The corresponding diameter of above-mentioned a plurality of second aperture centre distance photon screen centre distances and a plurality of second aperture can also have various embodiments, does not repeat them here.
The normalized intensity hot spot that the present embodiment photon screen forms contrasts as shown in Figure 3 with the partitioning type photon screen and the common photon screen of identical minimum process size.In figure, can see that the type that interweaves photon screen has less spot size, therefore, can obtain higher resolving power.
The content that the present invention does not elaborate is those skilled in the art's common practise.
The above only is a concrete embodiment of the present invention, is not limited to the present invention.All any modifications of being made within the spirit and principles in the present invention are equal to replacement or improvement etc., all should be included in protection scope of the present invention.
Claims (7)
1. type photon screen that interweaves, it is characterized in that comprising transparent medium, metal level and microtexture, preparation has metal level on transparent medium, and on metal level, etch required microtexture and process, described microtexture is made up of a plurality of apertures that are in the different radii on a plurality of odd number endless belt and a plurality of even number endless belt that ring-band shape distributes, have different ratios between the diameter that is in the aperture on even number and the odd number endless belt and the endless belt bandwidth of living in, the diffraction light wave of aperture is at the amplitude opposite in sign at focus place on even number and odd number endless belt, and the aperture on even number endless belt and the odd number endless belt has constructive interference on focus.
2. the type photon screen that interweaves according to claim 1 is characterized in that described aperture comprises first aperture and second aperture, and first aperture and second aperture are the amplitude type apertures.
3. compound photon screen according to claim 1 is characterized in that, each aperture center and transparent medium center apart from r
nSatisfy formula
F is the photon screen focal length, and λ is by being used optical wavelength, and n is 1/2 even-multiple, and then aperture is positioned at the even number endless belt; N is 1/2 odd-multiple, and then aperture is positioned at the odd number endless belt.
7. the type photon screen that interweaves according to claim 6, it is characterized in that, small aperture and ratio k between the corresponding endless belt bandwidth comprise that the diameter that is in a plurality of first apertures on a plurality of even number endless belt and the ratio between the endless belt bandwidth are that k1 and the diameter that is in a plurality of second apertures on a plurality of odd number endless belt and the ratio between the endless belt bandwidth are k2, have first-order bessel function J respectively on a plurality of even number endless belt He on a plurality of odd number endless belt
1() is expressed as:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110025563 CN102053294B (en) | 2011-01-20 | 2011-01-20 | Interlaced type photon sieve |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110025563 CN102053294B (en) | 2011-01-20 | 2011-01-20 | Interlaced type photon sieve |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102053294A true CN102053294A (en) | 2011-05-11 |
CN102053294B CN102053294B (en) | 2013-05-29 |
Family
ID=43957819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201110025563 Expired - Fee Related CN102053294B (en) | 2011-01-20 | 2011-01-20 | Interlaced type photon sieve |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102053294B (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102681060A (en) * | 2011-03-17 | 2012-09-19 | 中国科学院微电子研究所 | Compound type zone plate photon sieve |
CN104199135A (en) * | 2014-09-18 | 2014-12-10 | 中国科学院光电技术研究所 | Long-focus deep-sector partition photon sieve for laser direct writing |
CN105204102A (en) * | 2015-11-10 | 2015-12-30 | 中国科学院光电技术研究所 | Single focus point photon sieve |
JP2019159314A (en) * | 2018-03-15 | 2019-09-19 | ザ・ボーイング・カンパニーThe Boeing Company | System and method for receiving signal information for networking using free space optical link |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101614961A (en) * | 2008-06-25 | 2009-12-30 | 中国科学院微电子研究所 | Partial zonal photon sieve and preparation method thereof |
CN101661225A (en) * | 2008-08-27 | 2010-03-03 | 中国科学院微电子研究所 | Phase-type zone plate photon sieve |
CN101694532A (en) * | 2009-10-22 | 2010-04-14 | 中国科学院光电技术研究所 | Phase type photon sieve |
-
2011
- 2011-01-20 CN CN 201110025563 patent/CN102053294B/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101614961A (en) * | 2008-06-25 | 2009-12-30 | 中国科学院微电子研究所 | Partial zonal photon sieve and preparation method thereof |
CN101661225A (en) * | 2008-08-27 | 2010-03-03 | 中国科学院微电子研究所 | Phase-type zone plate photon sieve |
CN101694532A (en) * | 2009-10-22 | 2010-04-14 | 中国科学院光电技术研究所 | Phase type photon sieve |
Non-Patent Citations (1)
Title |
---|
《光子学报》 20081231 姜骥等 基于角谱法的振幅型光子筛的设计和分析 1734-1738 1-7 第37卷, 第9期 * |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102681060A (en) * | 2011-03-17 | 2012-09-19 | 中国科学院微电子研究所 | Compound type zone plate photon sieve |
CN104199135A (en) * | 2014-09-18 | 2014-12-10 | 中国科学院光电技术研究所 | Long-focus deep-sector partition photon sieve for laser direct writing |
CN104199135B (en) * | 2014-09-18 | 2016-09-21 | 中国科学院光电技术研究所 | A kind of Diode laser fanned partition photon screen for laser direct-writing |
CN105204102A (en) * | 2015-11-10 | 2015-12-30 | 中国科学院光电技术研究所 | Single focus point photon sieve |
CN105204102B (en) * | 2015-11-10 | 2017-10-20 | 中国科学院光电技术研究所 | A kind of single focus photon screen |
JP2019159314A (en) * | 2018-03-15 | 2019-09-19 | ザ・ボーイング・カンパニーThe Boeing Company | System and method for receiving signal information for networking using free space optical link |
CN110278026A (en) * | 2018-03-15 | 2019-09-24 | 波音公司 | The system and method for the signal message of networking are received with Free Space Optics link |
US10439713B1 (en) | 2018-03-15 | 2019-10-08 | The Boeing Company | System and method for receiving signal information for networking using a free space optical link |
Also Published As
Publication number | Publication date |
---|---|
CN102053294B (en) | 2013-05-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102053294B (en) | Interlaced type photon sieve | |
CN104898195B (en) | Generalized Fibonacci zone plate | |
CN103430056A (en) | Microlens array sheet and backlight unit having same | |
US20160085104A1 (en) | Mask, spacer produced by using the mask and method for producing spacer using the mask | |
CN102053295A (en) | Compound type photon sieve | |
CN106094217A (en) | Self focusing light beam generator and method for designing thereof | |
CN101694532B (en) | Phase type photon sieve | |
CN101881844B (en) | Girdle photon sieve and manufacturing method thereof | |
CN101187709A (en) | Isocandela beam-dividing grating for eliminating zero-grade diffraction spectrum point | |
CN101614961B (en) | Partial zonal photon sieve and manufacturing method thereof | |
CN101398493A (en) | Amplitude type zone plate photonsieve | |
CN103048716A (en) | Single stage focusing wave zone plate and manufacturing method thereof | |
CN101587198B (en) | Large area photon sieve | |
CN105204102A (en) | Single focus point photon sieve | |
CN102289157B (en) | Projection photoetching system with composite photon sieve | |
CN103091749A (en) | High-transmittance photon sieve | |
CN103293677A (en) | Dodging device and manufacturing method thereof | |
CN103813701B (en) | Double-deck triangle and quadrature hybrid distribution annulus and sub-circle ring array electromagnetic shielding optical window | |
CN104199135B (en) | A kind of Diode laser fanned partition photon screen for laser direct-writing | |
CN104199136B (en) | A kind of Diode laser photon screen | |
CN102375169B (en) | Compound-type wave zone plate photon screen | |
CN201035172Y (en) | A binary light quantum riddle | |
CN101661225A (en) | Phase-type zone plate photon sieve | |
CN102621610B (en) | Manufacture method of high resolution super diffraction focusing structure lens | |
CN104779306A (en) | Solar cell grid with umbrella-shaped plug sub-wavelength anti-reflective structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130529 Termination date: 20140120 |