CN102023386A - Array full-ring photon sieve light equalizer and manufacturing method thereof - Google Patents

Array full-ring photon sieve light equalizer and manufacturing method thereof Download PDF

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CN102023386A
CN102023386A CN2009100932768A CN200910093276A CN102023386A CN 102023386 A CN102023386 A CN 102023386A CN 2009100932768 A CN2009100932768 A CN 2009100932768A CN 200910093276 A CN200910093276 A CN 200910093276A CN 102023386 A CN102023386 A CN 102023386A
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ring
photon sieve
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贾佳
谢长青
刘明
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Institute of Microelectronics of CAS
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Abstract

The invention discloses an array full-ring photon sieve light equalizer and a manufacturing method thereof. The array full-ring photon sieve light equalizer is a full-ring photon sieve array manufactured on a transparent medium, the full-ring photon sieve is used as a basic unit, the full-ring photon sieve is a plurality of round holes based on a Fresnel zone plate and manufactured on a transparent substrate, firstly, photon sieves with the diffraction aperture being one time of that of a corresponding Fresnel ring are manufactured on the transparent medium, then, round holes are still etched on the rest Fresnel zone plates, so that the odd-numbered zone and the even-numbered zone of the zone plate are provided with light-transmitting etching round holes which are respectively the light-transmitting holes of the odd-numbered ring and the light-transmitting holes of the even-numbered ring, wherein the phase of the light-transmitting holes of the etching phase is pi, the size of each etching round hole is the same as the bandwidth of the corresponding ring, and the etching round holes and the original diffraction holes form the full-ring. The invention realizes the conversion of Gaussian beams and other laser beams with uneven wave fronts into diffracted beams with approximate plane wave fronts.

Description

Array full-ring photon sieve light uniforming device and preparation method thereof
Technical field
The present invention relates to shaping technique field, laser beam corrugated, particularly a kind of be used to realize before the high bass wave and before the irregular wave laser beam promptly realize approaching array full-ring photon sieve light uniforming device of the light field that plane wave front distributes and preparation method thereof in the wavefront flat-topization of far field construction light field.This kind array full-ring photon sieve light uniforming device can be used for beam shaping, microelectronics non-mask etching and other needs in the various light paths of plane wave front.
Background technology
By all means to before the high bass wave and irregular wave before laser beam spare light, make optical beam transformation become to approach that the light beam of plane wave front is the problem of a practicality, in various light paths, all be widely used, such as needing to realize that the optical device of this function is referred to as light uniforming device in the various instruments of plane wave front at beam shaping, microelectronics non-mask etching and other.
Thereby position phase modulation technique is to distribute mutually by the position that changes diffracted ray propagation cross section to realize the technology of expection diffraction intensity distribution.The method that is used to modulate has multiple, the phase board that has fixed bit to distribute mutually, also the modulation sheet that can be distributed mutually by the Control of Voltage position made of using light electric crystal.Because the utilization ratio of diffraction phase board luminous energy is the highest, so the most frequently used.
So-called light uniforming device is also referred to as even bundle device, is that a kind of incident beam wavefront that changes is to realize the optical device of similar plane wave front light beam.General light uniforming device comprises:
Prism method: principle of work is the quasi-parallel laser beam when a branch of light distribution approximate Gaussian function, and during by prism, light beam is divided into four light beams by kaleidoscope prism, and four light beams are after stack on the X-Y plane, and the beam distribution homogeneity has better improvement.(the x of any on X-Y plane, y), through behind the kaleidoscope prism, light intensity on the X-Y plane changes number percent less than 3%, the Laser Transmission rate can reach 94%, can obtain well even effect of output beam and higher Laser Transmission rate with prism method, but the even effect of prism method only just obtains desirable effect when the strict symmetry of input beam, and obtain the extremely strict angle in position in uniform beam cross section corresponding to wedge.
The catoptron method: principle of work is the quasi-parallel laser beam process lens L when a branch of light distribution approximate Gaussian function 1Focus on mirror M 1On, through after the primary event, its energy distribution will be passed through lens L equally according to change and energy superposition phenomenon that beam direction takes place shown in Fig. 1-2 2And mirror M 2After, light beam will superpose again.Through after the light beam stack repeatedly, its initial Gaussian beam energy distribution is with homogenized like this.Also can obtain well even effect of output beam and higher Laser Transmission rate with the catoptron method, but the assembling of catoptron method and debugging are very difficult.
The kaleidoscope method: principle of work is for being that the incident light of approximate Gaussian distribution is with maximum incident angle θ when light distribution MaxAfter entering optical waveguide, have only with lens axis light parallel or become a less angle with optical axis and directly pass through waveguide without reflection, the light of all the other incident lights will produce in waveguide on the difference of reflection arrival output face.The kaleidoscope method makes, debugs simple and easy, and cost reduces greatly, can change the size of output facula easily, but the loss of this system is bigger.
The cylindrical mirror method: the method principle is for being surrounded the square structure of a hollow by four cylindrical mirrors, every cylindrical mirror is installed on the meticulous adjustment rack, by regulating the size and dimension that to control hollow space, laser radiation is on device, hollow space laser directly sees through, be radiated at the strong part of the low light level that light on the edge cylindrical lens will compensate to intermediate light, adjust knob by the parameter and suitable adjusting of calculating cylindrical mirror, just can obtain equal light effect, the advantage of this method is that the light beam transmitance is higher, all light effect is better, but the designer has relatively high expectations, and the designer need calculate lens parameters and design high-precision micro-adjusting mechanism.
Fly's-eye lens array method: principle is a fly_eye lens array condenser system light path, and by the square lens arra L that m * m sheet focal length and measure-alike lenslet are formed, lens array L is divided into m to the collimated light beam corrugated of incident 2The bundle beamlet, actual in the light distribution that forms on the target surface is the integration that spherical mirror is focused at each beamlet the light intensity on its focal plane.Use the lens arra condenser system, even under the very poor situation of incident beam near field distribution homogeneity, still can on the focal plane, obtain uniform lighting effect.
The array light uniforming device, be called the even bundle of array device again, be based on mathematics integral principle design, it can be divided into light beam unlimited a plurality of tiny light beams, the energy distribution of the light beam inside that each is tiny is uniform, penlight accumulative total stack with all has just obtained the hot spot that distributes in a certain position energy even.[referring to, Lin ying, Lawrence Geoge N, Buck Jesse.Charaterization of excimerlasers for application to lenslet array homogenizer[J], Applied Optics, 2001,49 (12): 1931-1941].The basic array unit of array light uniforming device can be lens, and promptly above-mentioned fly eye lens array method also can be that Fresnel zone plate is [referring to Liu Xun, Chen Tao, Zuo Tiechuan is applied to the design studies of the binary optical elements of excimer laser corrugated shaping, Chinese laser (monograph), in March, 2008.]
So-called photon screen is a kind of novel focal imaging diffraction optical device, utilizes it to focus on and imaging X-ray, and this is that the image optics device of general prism and glass material can't be realized.Photon screen is compared with traditional optical element Fresnel zone plate, has advantages such as high resolving power and inhibition second-order diffraction principal maximum, can improve the contrast of imaging.And, as novel diffraction element, advantages such as volume is little, in light weight, transreplication that it has.
Photon screen can be applied to high resolution microscope, astronomical telescope, photoetching of future generation, the controlled nuclear fusion of laser (ICF) research etc.
In calendar year 2001, Kipper et al. has proposed a kind of novel diffraction optical device first: photon screen, come grenz ray and EUV radiating light source are focused on and imaging [Kipp with it, L., Skibowski, M., Johnson, R.L., Berndt, R., Adelung, R., Harm, S., and Seemann, R.Sharperimages by focusing soft X-ray with photon sieves.Nature[J], 2001.414,184-188.].
Photon screen (Photon Sieve, PS) be the diffraction optical elements of on the Fresnel zone ring, making a large amount of transparent micropores that suitably distribute with different radii (Diffraction Optical Element, DOE).
Full-ring photon sieve [jia jia, xie changqing, Phase zone photon sieve, ChinesePhysics B, vol 18 No1,2009] is a kind of mutation of neoteric photon screen device, and it has than photon screen more performance.Can be at a lot of local photon screens that substitute.Number of patent application 200810222330.x.
Summary of the invention
(1) technical matters that will solve
In view of this, fundamental purpose of the present invention is to provide a kind of array full-ring photon sieve light uniforming device and preparation method thereof, to realize Gaussian beam and other wavefront non-uniform laser beams are transformed to the diffracted beam of wavefront almost plane.
(2) technical scheme
For achieving the above object, the invention provides a kind of array full-ring photon sieve light uniforming device, this array full-ring photon sieve light uniforming device is the full-ring photon sieve array of making on transparent medium, adopt full-ring photon sieve as elementary cell, this full-ring photon sieve is a plurality of circular holes of making on transparent substrate based on Fresnel zone plate, making the diffraction aperture earlier on transparent medium is one times of photon screen of corresponding Fresnel annulus, then at remaining Fresnel endless belt place still etching circular hole, the decision rule of the quantity of circular hole and position is identical with the photon screen annulus, just be increased to odd loop from original even loop, perhaps be increased to even loop from original odd loop, the etching circular hole that printing opacity is all arranged at the odd and even number endless belt of zone plate like this, it is respectively the etching position light hole mutually of the light hole of odd loop and even loop, wherein the position of etching position phase light hole is π mutually, the size of each etching circular hole is identical with corresponding endless belt width, this etching circular hole and original opening diffracting formation full-ring photon sieve.
In the such scheme, full-ring photon sieve is light hole printing opacity mutually in the etching position of the light hole of odd loop and even loop, and remainder is light tight, and lighttight place plates the chromium film.
For achieving the above object, the present invention also provides a kind of method of making array full-ring photon sieve light uniforming device, and this method utilizes lsi technology technology and plane photoetching process technology to realize, comprising:
Utilize the electron-beam direct writing legal system to make mother matrix;
Master pattern is transferred on the optical glass that scribbles photoresist by the contact photolithography method;
Utilize the inductive couple plasma lithographic technique, will move on to pattern etch on the optical glass photoresist in optical glass.
In the such scheme, describedly master pattern is transferred in the step on the optical glass that scribbles photoresist by the contact photolithography method, the error of repelication of described contact exposure is less than 0.5 μ m, and the photoresist that is adopted is Shipley s1818, and thickness is 1.8 μ m.
In the such scheme, in the described step of pattern etch in the optical glass that will move on on the optical glass photoresist, the etching gas that is adopted is fluoroform CHF 3, flow is 30SCCM, and RF power is 500W, and bias power is 200W, is 0.077 μ m/min to the etch rate of quartz substrate.
(3) beneficial effect
Array full-ring photon sieve light uniforming device provided by the invention, be based on mathematics integral principle design, it can be divided into light beam unlimited a plurality of tiny light beams, the energy distribution of the light beam inside that each is tiny is uniform, penlight accumulative total stack with all has just obtained the hot spot that distributes in a certain position energy even.The elementary cell full-ring photon sieve of this kind array light uniforming device, it is the diffraction element of a phase-type, its independent function is to realize inciding light beam on it in the wavefront flat-topization in far field, and after incident beam incides this elementary cell, the focusing again of light beam and the diffusion in far field have been realized, thereby realized the even light of array device, Gaussian beam and other wavefront non-uniform laser beams have been transformed to the diffracted beam of wavefront almost plane.
Description of drawings
Fig. 1 is the basic diffraction element of array full-ring photon sieve light uniforming device, the synoptic diagram of full-ring photon sieve.Black is the light transmission part among the figure, and the position is 0 mutually, the part of white printing opacity, and the position is π mutually, grey is lighttight part, the chromium film.This full-ring photon sieve is based on the full-ring photon sieve of 10 ring Fresnel zone plates.Circularhole diameter and the wide ratio of corresponding Fresnel zone plate annulus are 1.
Fig. 2 is the synoptic diagram of 10 * 10 array photon screen light uniforming devices of one of array full-ring photon sieve light uniforming device embodiment of the present invention, and diffraction element is Fig. 1;
The a branch of Gaussian beam of Fig. 3 incides the synoptic diagram of array full-ring photon sieve light uniforming device.
Fig. 4 is the synoptic diagram of 10 * 10 array Fresnel zone plate light uniforming devices.The basic diffraction element formula Fresnel zone plate of this kind light uniforming device, this kind light uniforming device is published.The purpose that the present invention lists this light uniforming device is that array full-ring photon sieve ring light uniforming device of the present invention and array fresnel's zone plate light uniforming device are compared, thereby proves that even light result of the present invention is better than array Fei Nier zone plate light uniforming device.
The a branch of Gaussian beam of Fig. 5 incides the synoptic diagram of array Fresnel zone plate light uniforming device.
Fig. 6 Gaussian beam does not incide any light uniforming device, incides array Fresnel zone plate light uniforming device, incides the intensity contrast figure of the diffracted beam of array full-ring photon sieve light uniforming device.Can obviously find out from figure: do not incide any light uniforming device, the light intensity distributions of Gaussian beam is a Gaussian curve.Two kinds of light uniforming devices all are the even light of having realized Gaussian beam, but the even light effect of array full-ring photon sieve light uniforming device provided by the invention is better than the even light effect of existing array Fresnel zone plate light uniforming device.Because it has realized more approaching the diffracted beam of plane wave front.
Fig. 7 is the experiment pick-up unit of array full-ring photon sieve light uniforming device.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Array full-ring photon sieve light uniforming device is a kind of novel diffraction optics phase part, i.e. phase board.This phase board is positioned over before or after the diffraction limit lens, and laser beam far field construction light field is revised, promptly even light, and realization more approaches the diffracted beam of plane wave front than (such as Gaussian beam) before the incident beam irregular wave.The present invention has provided the project organization of array full-ring photon sieve light uniforming device, and has carried out relevant simulated experiment.Experimental verification adopt array full-ring photon sieve light uniforming device can realize the flat-topization of Gaussian beam wavefront, promptly Gaussian beam is for conversion into the diffracted beam that wavefront approaches plane wave front.The technology of the present invention can be used for beam shaping, microelectronics non-mask etching and other needs in the various light paths of plane wave front light beam.
This array full-ring photon sieve light uniforming device provided by the invention, it is the full-ring photon sieve array of on transparent medium, making, adopt full-ring photon sieve as elementary cell, this full-ring photon sieve is a plurality of circular holes of making on transparent substrate based on Fresnel zone plate, making the diffraction aperture earlier on transparent medium is one times of photon screen (common photon screen opening diffracting diameter is 1.5 times of corresponding Fresnel endless belt width) of corresponding Fresnel annulus, then at remaining Fresnel endless belt place still etching circular hole, the decision rule of the quantity of circular hole and position is identical with the photon screen annulus, just be increased to odd loop from original even loop, perhaps be increased to even loop from original odd loop, the etching circular hole that printing opacity is all arranged at the odd and even number endless belt of zone plate like this, it is respectively the etching position light hole mutually of the light hole of odd loop and even loop, wherein the position of etching position phase light hole is π mutually, the size of each etching circular hole is identical with corresponding endless belt width, this etching circular hole and original opening diffracting formation full-ring photon sieve
Fig. 2 is the synoptic diagram of 10 * 10 array photon screen light uniforming devices of one of array full-ring photon sieve light uniforming device embodiment of the present invention, and diffraction element is Fig. 1; Black is the light transmission part among the figure, and the position is 0 mutually, and the position of white printing opacity circular hole is π mutually, and grey color part is light tight.This full-ring photon sieve is based on the photon screen of 10 ring Fresnel zone plates.Circularhole diameter and the wide ratio of corresponding Fresnel zone plate annulus are 1.
By the conclusion of diffraction optics angular spectrum as can be known:
Be located at and introduce an infinitely-great position photo that includes the light uniforming device structure on the z=0 plane, desirable Gaussian beam impinges upon on the light uniforming device.The transmittance function of light uniforming device is that (z): it is E (x, y, 0) that Gaussian beam sees through the light uniforming device light intensity to S for x, y, and discrete Fourier transformation obtains the angular spectrum F0 (fx, fy, 0) of incident light on diffraction screen through two-dimensional space.
E ( f x , f Y , 0 ) = ∫ - ∞ ∞ ∫ - ∞ ∞ E ( x , y , 0 ) exp [ - j 2 π ( f X x + f Y y ) ] dxdy - - - ( 1 )
In (1), f X, f YBe spatial frequency, f X = α λ , f Y = β λ (α, β are wave vectors
Figure G2009100932768D00073
With X-axis, the angle between the Y-axis).Incident light is propagated along the Z direction through behind the light uniforming device.At the Z=z place, the frequency spectrum E. of spatial frequency (fx, fy z) are:
E ( f X , f Y , z ) = E ( f X , f Y , 0 ) exp ( j 2 π 1 λ 2 - f X 2 - f Y 2 . z ) - - - ( 3 )
In (3), f Xf YMust satisfy condition f X 2 + f Y 2 ≤ 1 / λ 2 , This formula shows that the effect of propagating the z of a segment distance has just changed the relative phase of each angular spectrum component.But work as f X 2 + f Y 2 > 1 / λ 2 The time, (fx, fy z) are the frequency spectrum E. of spatial frequency
E(f X,f Y,z)=E(f X,f Y,0)exp(-μz) (4)
In (4), μ = 2 π λ ( x z ) 2 + ( y z ) 2 - 1 .
Because μ is an arithmetic number, these wave components increase decay rapidly because of propagation distance.(4) formula is done inverse Fourier transform, obtain light wave amplitude E (x, y, z)
E ( x , y , z ) = ∫ - ∞ ∞ ∫ - ∞ ∞ E ( f X , f Y , 0 ) exp ( j 2 π 1 λ 2 - f X 2 - f Y 2 . z ) exp [ j 2 π ( f X x + f Y y ) ] df X df Y - - - ( 5 )
More than being common angular spectrum diffraction theory, also is that we simulate the theoretical foundation of light uniforming device along light path.At array full-ring photon sieve light uniforming device, what need modification is exactly each transmittance function.
The present invention has provided the design parameter of array full-ring photon sieve light uniforming device.We have selected 10 * 10 array in Fig. 2, the selection of this array will be satisfied a principle: promptly the aperture of incident beam must be less than the amplitude of array, thereby can make incident beam to shine on the light uniforming device fully.Design parameter for the basic diffraction element of each full-ring photon sieve is as follows: the Fresnel parameter of generally choosing same parameter array Fresnel zone plate light uniforming device, obtain the parameter of photon screen then on this basis, Circularhole diameter and corresponding Fresnel zone plate ring width ratio are 1.
Array full-ring photon sieve light uniforming device of the present invention in the application of reality shown in 7.The 1st, collimation laser device, the 2nd, condenser lens, the 3rd, array full-ring photon sieve light uniforming device of the present invention, the 4th, CCD photodetector.Light process condenser lens 2 and array full-ring photon sieve light uniforming device 3 from collimation laser 1 sends produce diffractogram on the focal plane of condenser lens 2.Such diffracted beam intensity distributes and can be detected and confirmed it by the ccd detector on the focal plane that is placed on condenser lens 24.
Experimental results show that add designed array full-ring photon sieve light uniforming device after, realized really Gaussian beam is for conversion into emergent light near the plane wave front light beam.This explanation the present invention can be used for beam shaping, microelectronics non-mask etching and other needs in the various light paths of plane wave front.
The method of this making array full-ring photon sieve light uniforming device provided by the invention utilizes lsi technology technology and plane photoetching process technology to realize, specifically may further comprise the steps:
Step 1, utilize the electron-beam direct writing legal system to make mother matrix;
Step 2, master pattern is transferred on the optical glass that scribbles photoresist by the contact photolithography method;
Step 3, utilize the inductive couple plasma lithographic technique, will move on to pattern etch on the optical glass photoresist in optical glass.
Above-mentioned manufacturing array photon screen light uniforming device utilizes lsi technology technology and plane photoetching process technology to realize.At first, utilize the electron-beam direct writing legal system to make mother matrix, by the contact photolithography method, master pattern has been transferred on the optical glass that scribbles photoresist.The photoresist that is adopted is Shipley s1818, and thickness is 1.8 μ m.The error of repelication of contact exposure is less than 0.5 μ m.Each parameter of full-ring photon sieve provides in preamble.Light path synoptic diagram according to Fig. 7 arranges the measurement light path. and the laser works wavelength is 632.8nm.The refractive index of optical glass is 1.521, thereby the corresponding degree of depth in π position is 0.607 μ m.The degree of depth of utilizing Taylor's contourgraph to measure full-ring photon sieve is 0.607 μ m.Expand bundle, collimation then.In experiment, be one 10 * 10 array full-ring photon sieve light uniforming device, place ccd detector, the considerable thus size of measuring diffraction pattern then at the focal beam spot place.Measured data has proved the correctness of Theoretical Calculation.
Be example with one 10 * 10 array full-ring photon sieve light uniforming device below, describe its method for making:
1), determine the focal length and the number of rings of optical maser wavelength and full-ring photon sieve, these parameters have actual needs to provide, principle is that the photon screen number of rings can not be too little, otherwise influence focuses on, can not be too big, too big diffraction primitive is unfavorable for last even light;
2), determine the radius of the light beam of the wealthy Shu Yihou of laser according to need of work, the array that make must be greater than this radius.The size of array is by the size decision of light beam.
3), according to the draw domain of light uniforming device of method as herein described.
4), make array full-ring photon sieve light uniforming device.
Suppose that optical maser wavelength is 632.8 nanometers, the focal length of full-ring photon sieve is 2000 microns.The radius of drawing together the Shu Yihou Gaussian beam is 180 microns, selects 10 * 10 array, can satisfy whole requirements.Photon screen based on the number of rings of Fresnel zone plate be 10 rings, can design needed photon screen according to above parameter, as the diffraction primitive.Lighttight part all plates chromium.
Above-described concrete embodiment has carried out further detailed explanation to purpose of the present invention, technical scheme and beneficial effect.Institute it should be understood that the above only for concrete embodiment of the present invention, is not limited to the present invention.All any modifications of being made within the spirit and principles in the present invention, be equal to and replace or improvement etc., all should be included within protection scope of the present invention.

Claims (5)

1. array full-ring photon sieve light uniforming device, it is characterized in that, this array full-ring photon sieve light uniforming device is the full-ring photon sieve array of making on transparent medium, adopt full-ring photon sieve as elementary cell, this full-ring photon sieve is a plurality of circular holes of making on transparent substrate based on Fresnel zone plate, making the diffraction aperture earlier on transparent medium is one times of photon screen of corresponding Fresnel annulus, then at remaining Fresnel endless belt place still etching circular hole, the decision rule of the quantity of circular hole and position is identical with the photon screen annulus, just be increased to odd loop from original even loop, perhaps be increased to even loop from original odd loop, the etching circular hole that printing opacity is all arranged at the odd and even number endless belt of zone plate like this, it is respectively the etching position light hole mutually of the light hole of odd loop and even loop, wherein the position of etching position phase light hole is π mutually, the size of each etching circular hole is identical with corresponding endless belt width, this etching circular hole and original opening diffracting formation full-ring photon sieve.
2. array full-ring photon sieve light uniforming device according to claim 1 is characterized in that, full-ring photon sieve is light hole printing opacity mutually in the etching position of the light hole of odd loop and even loop, and remainder is light tight, and lighttight place plates the chromium film.
3. a method of making array full-ring photon sieve light uniforming device is characterized in that, this method utilizes lsi technology technology and plane photoetching process technology to realize, comprising:
Utilize the electron-beam direct writing legal system to make mother matrix;
Master pattern is transferred on the optical glass that scribbles photoresist by the contact photolithography method;
Utilize the inductive couple plasma lithographic technique, will move on to pattern etch on the optical glass photoresist in optical glass.
4. the method for making array full-ring photon sieve light uniforming device according to claim 3, it is characterized in that, describedly master pattern is transferred in the step on the optical glass that scribbles photoresist by the contact photolithography method, the error of repelication of described contact exposure is less than 0.5 μ m, the photoresist that is adopted is Shipley s1818, and thickness is 1.8 μ m.
5. the method for making full-ring photon sieve according to claim 4 is characterized in that, in the described step of pattern etch in the optical glass that will move on on the optical glass photoresist, the etching gas that is adopted is fluoroform CHF 3, flow is 30SCCM, and RF power is 500W, and bias power is 200W, is 0.077 μ m/min to the etch rate of quartz substrate.
CN2009100932768A 2009-09-16 2009-09-16 Array full-ring photon sieve light equalizer and manufacturing method thereof Pending CN102023386A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103064147A (en) * 2013-01-31 2013-04-24 东北大学秦皇岛分校 Method for manufacturing optical waveguide on the basis of focused ion beam lithography
CN103487943A (en) * 2013-10-10 2014-01-01 中国科学院上海微系统与信息技术研究所 Laser point light source cluster generating device
CN106271088A (en) * 2016-08-25 2017-01-04 南开大学 A kind of Fresnel zone plate array making method based on femtosecond laser and application
CN110471143A (en) * 2019-09-05 2019-11-19 西华大学 A kind of fiber coupler based on multi-wavelength photon screen array
CN111025671A (en) * 2019-12-23 2020-04-17 中国科学院长春光学精密机械与物理研究所 Multifunctional super lens array and optical system
CN111715997A (en) * 2019-03-21 2020-09-29 中国科学院微电子研究所 System and method for homogenizing Gaussian laser

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JIA JIA,ET AL: "Phase zone photon sieve", 《CHINESE PHYSICS B》 *
刘勋: "应用于准分子激光波面整形的二元光学元件的设计研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》 *

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103064147A (en) * 2013-01-31 2013-04-24 东北大学秦皇岛分校 Method for manufacturing optical waveguide on the basis of focused ion beam lithography
CN103064147B (en) * 2013-01-31 2015-12-09 东北大学秦皇岛分校 Based on the method for focused-ion-beam lithography optical waveguide
CN103487943A (en) * 2013-10-10 2014-01-01 中国科学院上海微系统与信息技术研究所 Laser point light source cluster generating device
CN103487943B (en) * 2013-10-10 2016-04-13 中国科学院上海微系统与信息技术研究所 A kind of generation device of laser point light source cluster
CN106271088A (en) * 2016-08-25 2017-01-04 南开大学 A kind of Fresnel zone plate array making method based on femtosecond laser and application
CN111715997A (en) * 2019-03-21 2020-09-29 中国科学院微电子研究所 System and method for homogenizing Gaussian laser
CN110471143A (en) * 2019-09-05 2019-11-19 西华大学 A kind of fiber coupler based on multi-wavelength photon screen array
CN111025671A (en) * 2019-12-23 2020-04-17 中国科学院长春光学精密机械与物理研究所 Multifunctional super lens array and optical system
CN111025671B (en) * 2019-12-23 2021-05-14 中国科学院长春光学精密机械与物理研究所 Multifunctional super lens array and optical system

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Application publication date: 20110420