CN104335279B - 芯片间存储器接口结构 - Google Patents

芯片间存储器接口结构 Download PDF

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Publication number
CN104335279B
CN104335279B CN201380028442.0A CN201380028442A CN104335279B CN 104335279 B CN104335279 B CN 104335279B CN 201380028442 A CN201380028442 A CN 201380028442A CN 104335279 B CN104335279 B CN 104335279B
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Prior art keywords
memory
physical address
tube core
address space
data
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Chinese (zh)
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CN104335279A (zh
Inventor
J·徐
D·T·全
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/10—Address translation
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14—Handling requests for interconnection or transfer
    • G06F13/16—Handling requests for interconnection or transfer for access to memory bus
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201380028442.0A 2012-06-01 2013-05-31 芯片间存储器接口结构 Active CN104335279B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261654156P 2012-06-01 2012-06-01
US61/654,156 2012-06-01
US13/752,427 2013-01-29
US13/752,427 US9448947B2 (en) 2012-06-01 2013-01-29 Inter-chip memory interface structure
PCT/US2013/043714 WO2013181603A2 (en) 2012-06-01 2013-05-31 Inter-chip memory interface structure

Publications (2)

Publication Number Publication Date
CN104335279A CN104335279A (zh) 2015-02-04
CN104335279B true CN104335279B (zh) 2017-08-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380028442.0A Active CN104335279B (zh) 2012-06-01 2013-05-31 芯片间存储器接口结构

Country Status (7)

Country Link
US (1) US9448947B2 (https=)
EP (1) EP2856466B1 (https=)
JP (1) JP6105720B2 (https=)
KR (1) KR101748329B1 (https=)
CN (1) CN104335279B (https=)
IN (1) IN2014MN02115A (https=)
WO (1) WO2013181603A2 (https=)

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KR102107147B1 (ko) * 2013-02-01 2020-05-26 삼성전자주식회사 패키지 온 패키지 장치
KR102144367B1 (ko) * 2013-10-22 2020-08-14 삼성전자주식회사 반도체 패키지 및 이의 제조 방법
US9570142B2 (en) * 2015-05-18 2017-02-14 Micron Technology, Inc. Apparatus having dice to perorm refresh operations
US20170118140A1 (en) * 2015-10-21 2017-04-27 Mediatek Inc. Network switch having identical dies and interconnection network packaged in same package
KR102755934B1 (ko) 2016-10-04 2025-01-17 삼성전자 주식회사 무선 통신 장치 및 그 제어 방법
KR102400101B1 (ko) * 2017-11-03 2022-05-19 삼성전자주식회사 Pop 반도체 패키지 및 그를 포함하는 전자 시스템
US10579557B2 (en) * 2018-01-16 2020-03-03 Advanced Micro Devices, Inc. Near-memory hardened compute blocks for configurable computing substrates
KR20190087893A (ko) 2018-01-17 2019-07-25 삼성전자주식회사 클럭을 공유하는 반도체 패키지 및 전자 시스템
KR102674550B1 (ko) 2019-10-07 2024-06-13 삼성전자주식회사 온-다이 미러링 기능을 갖는 메모리 칩 및 그것을 테스트하는 방법
US11797229B2 (en) 2020-07-02 2023-10-24 Micron Technology, Inc. Multiple register clock driver loaded memory subsystem

Citations (4)

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Publication number Priority date Publication date Assignee Title
CN101461007A (zh) * 2005-12-30 2009-06-17 美光科技公司 用于存储器堆叠系统和方法的可配置输入和输出
US20100082911A1 (en) * 2008-09-30 2010-04-01 Ripan Das Low power termination for memory modules
US20120051171A1 (en) * 2010-08-31 2012-03-01 Micron Technology, Inc. Channel skewing
US20120137090A1 (en) * 2010-11-29 2012-05-31 Sukalpa Biswas Programmable Interleave Select in Memory Controller

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US5945886A (en) * 1996-09-20 1999-08-31 Sldram, Inc. High-speed bus structure for printed circuit boards
JP2008140220A (ja) 2006-12-04 2008-06-19 Nec Corp 半導体装置
US8120958B2 (en) * 2007-12-24 2012-02-21 Qimonda Ag Multi-die memory, apparatus and multi-die memory stack
US7701251B1 (en) 2008-03-06 2010-04-20 Xilinx, Inc. Methods and apparatus for implementing a stacked memory programmable integrated circuit system in package
US20100174858A1 (en) 2009-01-05 2010-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Extra high bandwidth memory die stack
US8683164B2 (en) 2009-02-04 2014-03-25 Micron Technology, Inc. Stacked-die memory systems and methods for training stacked-die memory systems
US8713248B2 (en) * 2009-06-02 2014-04-29 Nokia Corporation Memory device and method for dynamic random access memory having serial interface and integral instruction buffer
US8296526B2 (en) * 2009-06-17 2012-10-23 Mediatek, Inc. Shared memory having multiple access configurations
US8604593B2 (en) * 2009-10-19 2013-12-10 Mosaid Technologies Incorporated Reconfiguring through silicon vias in stacked multi-die packages
US8400808B2 (en) * 2010-12-16 2013-03-19 Micron Technology, Inc. Phase interpolators and push-pull buffers
JP2013058277A (ja) * 2011-09-07 2013-03-28 Renesas Electronics Corp 半導体装置
US20130159587A1 (en) * 2011-12-15 2013-06-20 Aaron Nygren Interconnect Redundancy for Multi-Interconnect Device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101461007A (zh) * 2005-12-30 2009-06-17 美光科技公司 用于存储器堆叠系统和方法的可配置输入和输出
US20100082911A1 (en) * 2008-09-30 2010-04-01 Ripan Das Low power termination for memory modules
US20120051171A1 (en) * 2010-08-31 2012-03-01 Micron Technology, Inc. Channel skewing
US20120137090A1 (en) * 2010-11-29 2012-05-31 Sukalpa Biswas Programmable Interleave Select in Memory Controller

Also Published As

Publication number Publication date
KR101748329B1 (ko) 2017-06-16
WO2013181603A2 (en) 2013-12-05
EP2856466A2 (en) 2015-04-08
JP2015525398A (ja) 2015-09-03
EP2856466B1 (en) 2018-10-24
CN104335279A (zh) 2015-02-04
WO2013181603A3 (en) 2014-02-27
IN2014MN02115A (https=) 2015-09-11
KR20150016605A (ko) 2015-02-12
JP6105720B2 (ja) 2017-03-29
US20130326188A1 (en) 2013-12-05
US9448947B2 (en) 2016-09-20

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