CN104310994A - Li2MgTi3O8系微波介质陶瓷Mn2+置换A位Mg2+提高Q值的方法 - Google Patents

Li2MgTi3O8系微波介质陶瓷Mn2+置换A位Mg2+提高Q值的方法 Download PDF

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CN104310994A
CN104310994A CN201410619937.7A CN201410619937A CN104310994A CN 104310994 A CN104310994 A CN 104310994A CN 201410619937 A CN201410619937 A CN 201410619937A CN 104310994 A CN104310994 A CN 104310994A
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张平
赵永贵
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Tianjin University
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    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
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Abstract

本发明公开了一种Li2MgTi3O8系微波介质陶瓷Mn2+置换A位Mg2+提高Q值的方法，先将原料Li2CO3、MgO、TiO2和MnCO3按Li2(Mg1-xMnx)Ti3O8，其中0﹤x≤0.07的化学式称量配料，经过球磨，烘干，过筛，于900℃下预烧，合成主晶相；再经球磨、烘干、造粒后，压制成生坯，再于1040℃～1120℃烧结，制得微波介质陶瓷。本发明通过采用Mn2+离子取代A位的部分Mg2+离子，成功地将Li2MgTi3O8系微波介质陶瓷的品质因数提高至55,000GHz。

Description

Li2MgTi3O8系微波介质陶瓷Mn2+置换A位Mg2+提高Q值的方法
技术领域
本发明属于电子信息材料与元器件领域，特别涉及一种新型高Q值(品质因数)微波介质陶瓷Li2MgTi3O8系的制备方法。
背景技术
近年来，移动通讯、卫星通信、军用雷达、全球卫星定位系统(GPS)、蓝牙技术、无线局域网等现代通信技术得到了快速发展。这些通信装置中使用的微波电路一般由谐振器、滤波器、振荡器、衰减器、介质天线、微波集成电路基片等元件组成，微波介质陶瓷是其制备的关键基础材料。用微波介质陶瓷制作的元器件具有体积小、质量轻、性能稳定、价格便宜等优点。
相比其他微波介质陶瓷体系，具有尖晶石结构的Li2MgTi3O8微波介质陶瓷不仅具有原料丰富和价格低廉的优势，还拥有优良的微波介电特性，其介电性能为εr＝27.2，Q×f＝42,000GHz，τf＝3.2ppm/℃。此外，Li2MgTi3O8微波介质陶瓷具有固有烧结温度低(1080℃)，容易实现低温烧结，可与Ag电极共烧等优点，极具商业价值，是一种极具前景的、潜在的新型微波介质陶瓷材料。然而，Li2MgTi3O8微波介质陶瓷的品质因数Q×f值较低，无法满足微波高频段低损耗应用的要求。因此，有必要对其进行改性，以提高其Q×f值。目前，针对锂镁钛系微波介质陶瓷所展开的研究以低温烧结为主。然而，关于采用离子置换方法来改善Li2MgTi3O8陶瓷Q×f的研究尚无报道。
发明内容
本发明的目的，是克服现有技术微波介质陶瓷的品质因数Q×f值较低，提供一种以Li2CO3、MgO、TiO2、MnCO3为主要原料、采用Mn2+离子取代A位部分Mg2+离子、使Q×f值得到提高的Li2MgTi3O8系微波介质陶瓷的制备方法。
本发明通过如下技术方案予以实现。
一种Li2MgTi3O8系微波介质陶瓷Mn2+置换A位Mg2+提高Q值的方法，具有如下步骤：
(1)将原料Li2CO3、MgO、TiO2和MnCO3按Li2(Mg1-xMnx)Ti3O8，其中0﹤x≤0.07的化学式称量配料；
(2)将步骤(1)配制的原料放入球磨罐中，加入氧化锆球和去离子水，球磨4小时；再将球磨后的原料置于干燥箱中烘干，过40目筛，获得颗粒均匀的粉料；
(3)将步骤(2)处理好的粉料在900℃下预烧3小时，并在此温度下保温4小时，合成主晶相；
(4)将步骤(3)所得产物放入球磨罐中，加入去离子水，球磨6小时，烘干后外加石蜡作为粘合剂造粒，过80目筛后，采用粉末压片机压制成生坯；
(5)将步骤(4)成型后的生坯于1040℃～1120℃烧结，保温2～6小时，制得Li2(Mg1-xMnx)Ti3O8，其中0﹤x≤0.07微波介质陶瓷；
所述步骤(1)的化学式为Li2(Mg1-xMnx)Ti3O8，其中x＝0.03mol，即Li2(Mg0.97Mn0.03)Ti3O8。
所述步骤(4)的生坯为Φ10mm×5mm的圆柱体。
所述步骤(5)的烧结温度为1080℃。
本发明通过采用Mn2+离子取代A位的部分Mg2+离子，成功地将Li2MgTi3O8系微波介质陶瓷的品质因数提高至55,000GHz。
具体实施方式
本发明所用原料均为分析纯原料，具体实施例如下。
(1)将原料Li2CO3、MgO、TiO2和MnCO3按Li2(Mg1-xMnx)Ti3O8，其中0﹤x≤0.07的化学式称量配料；
(2)将步骤(1)配制的粉料放入球磨罐中，加入氧化锆球和去离子水，球磨4小时；将球磨后的原料置于干燥箱中烘干，烘干后过40目筛，获得颗粒均匀的粉料；
(3)将步骤(2)处理好的粉料在900℃下预烧3小时，并在此温度下保温4小时，合成主晶相；
(4)将步骤(3)所得产物放入球磨罐中，向粉料中加入去离子水，球磨6小时，烘干后外加石蜡作为粘合剂造粒，过80目筛后，用粉末压片机压制成Φ10mm×5mm的圆柱型生坯；
(5)将步骤(4)成型后的生坯于1080℃烧结，保温4小时，制得Li2(Mg1-xMnx)Ti3O8微波介质陶瓷；
然后，采用网络分析仪测试其微波介电性能。
本发明具体实施例的相关工艺参数及其微波介电性能详见表1。

Claims (4)

1.一种Li2MgTi3O8系微波介质陶瓷Mn2+置换A位Mg2+提高Q值的方法，具有如下步骤： 
(1)将原料Li2CO3、MgO、TiO2和MnCO3按Li2(Mg1-xMnx)Ti3O8，其中0﹤x≤0.07的化学式称量配料； 
(2)将步骤(1)配制的原料放入球磨罐中，加入氧化锆球和去离子水，球磨4小时；再将球磨后的原料置于干燥箱中烘干，过40目筛，获得颗粒均匀的粉料； 
(3)将步骤(2)处理好的粉料在900℃下预烧3小时，并在此温度下保温4小时，合成主晶相； 
(4)将步骤(3)所得产物放入球磨罐中，加入去离子水，球磨6小时，烘干后外加石蜡作为粘合剂造粒，过80目筛后，采用粉末压片机压制成生坯； 
(5)将步骤(4)成型后的生坯于1040℃～1120℃烧结，保温2～6小时，制得Li2(Mg1-xMnx)Ti3O8，其中0﹤x≤0.07微波介质陶瓷。 
2.根据权利要求1所述的Li2MgTi3O8系微波介质陶瓷Mn2+置换A位Mg2+提高Q值的方法，其特征在于，所述步骤(1)的化学式为Li2(Mg1-xMnx)Ti3O8，其中x＝0.03mol，即Li2(Mg0.97Mn0.03)Ti3O8。 
3.根据权利要求1所述的Li2MgTi3O8系微波介质陶瓷Mn2+置换A位Mg2+提高Q值的方法，其特征在于，所述步骤(4)的生坯为Φ10mm×5mm的圆柱体。 
4.根据权利要求1所述的Li2MgTi3O8系微波介质陶瓷Mn2+置换A位Mg2+提高Q值的方法，其特征在于，所述步骤(5)的烧结温度为1080℃。 
CN201410619937.7A 2014-11-05 2014-11-05 Li2MgTi3O8系微波介质陶瓷Mn2+置换A位Mg2+提高Q值的方法 Expired - Fee Related CN104310994B (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104710175A (zh) * 2015-02-09 2015-06-17 陕西师范大学 一种低介电常数锆酸镁锂微波介质陶瓷材料及其制备方法
CN110041067A (zh) * 2019-04-19 2019-07-23 贵阳顺络迅达电子有限公司 一种低介高q温度稳定型钙钛矿结构ltcc微波介质材料及其制备方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LIJING WANG ET AL.,: "Microwave dielectric characteristics of Li2(Mg0.94M0.06)Ti3O8(M=Zn,Co,and Mn) ceramics", 《CERAMICS INTERNATIONAL》, vol. 39, 13 December 2012 (2012-12-13), pages 5185 - 5190, XP028526866, DOI: doi:10.1016/j.ceramint.2012.12.015 *
王月: "Li2MgTi3O8系微波介质陶瓷的制备及离子置换的研究", 《中国优秀硕士学位论文全文数据库》, no. 5, 15 May 2015 (2015-05-15), pages 015 - 187 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104710175A (zh) * 2015-02-09 2015-06-17 陕西师范大学 一种低介电常数锆酸镁锂微波介质陶瓷材料及其制备方法
CN110041067A (zh) * 2019-04-19 2019-07-23 贵阳顺络迅达电子有限公司 一种低介高q温度稳定型钙钛矿结构ltcc微波介质材料及其制备方法
CN110041067B (zh) * 2019-04-19 2021-12-28 贵阳顺络迅达电子有限公司 一种低介高q温度稳定型钙钛矿结构ltcc微波介质材料及其制备方法

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