CN104303305B - 成像装置 - Google Patents

成像装置 Download PDF

Info

Publication number
CN104303305B
CN104303305B CN201380025543.2A CN201380025543A CN104303305B CN 104303305 B CN104303305 B CN 104303305B CN 201380025543 A CN201380025543 A CN 201380025543A CN 104303305 B CN104303305 B CN 104303305B
Authority
CN
China
Prior art keywords
groove
light shielding
pixel
shielding layer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201380025543.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN104303305A (zh
Inventor
冈崎裕美
内山正之
渡边史
渡边一史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN104303305A publication Critical patent/CN104303305A/zh
Application granted granted Critical
Publication of CN104303305B publication Critical patent/CN104303305B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201380025543.2A 2012-05-23 2013-05-16 成像装置 Expired - Fee Related CN104303305B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012-117194 2012-05-23
JP2012117194A JP6168331B2 (ja) 2012-05-23 2012-05-23 撮像素子、および撮像装置
PCT/JP2013/003135 WO2013175742A1 (en) 2012-05-23 2013-05-16 Imaging device

Publications (2)

Publication Number Publication Date
CN104303305A CN104303305A (zh) 2015-01-21
CN104303305B true CN104303305B (zh) 2019-01-25

Family

ID=48626543

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380025543.2A Expired - Fee Related CN104303305B (zh) 2012-05-23 2013-05-16 成像装置

Country Status (5)

Country Link
US (1) US10074684B2 (enExample)
JP (1) JP6168331B2 (enExample)
KR (1) KR102115046B1 (enExample)
CN (1) CN104303305B (enExample)
WO (1) WO2013175742A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6303803B2 (ja) 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
WO2015136418A1 (en) * 2014-03-13 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Imaging device
FR3030884B1 (fr) * 2014-12-19 2016-12-30 Stmicroelectronics (Grenoble 2) Sas Structure de pixel a multiples photosites
JP6570844B2 (ja) * 2015-02-26 2019-09-04 株式会社東芝 光検出器、その製造方法、放射線検出器、および放射線検出装置
US9653511B2 (en) 2015-08-11 2017-05-16 Omnivision Technologies, Inc. CMOS image sensor with peninsular ground contracts and method of manufacturing the same
JP2017168566A (ja) 2016-03-15 2017-09-21 ソニー株式会社 固体撮像素子、および電子機器
CN108231809A (zh) * 2017-12-12 2018-06-29 上海集成电路研发中心有限公司 一种背照式图像传感器及其制备方法
JP2019145544A (ja) * 2018-02-16 2019-08-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子
JP2020031136A (ja) 2018-08-22 2020-02-27 キヤノン株式会社 撮像装置およびカメラ
US11121160B2 (en) 2018-10-17 2021-09-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment comprising a light shielding part in a light receiving region and a light shielding film in a light shielded region
US11244978B2 (en) 2018-10-17 2022-02-08 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment including the same
JP7479801B2 (ja) * 2019-08-27 2024-05-09 ソニーセミコンダクタソリューションズ株式会社 撮像素子、製造方法、および電子機器
KR102696965B1 (ko) * 2019-09-03 2024-08-21 에스케이하이닉스 주식회사 이미지 센서
JPWO2021095668A1 (enExample) * 2019-11-13 2021-05-20
JP2021086881A (ja) * 2019-11-26 2021-06-03 キヤノン株式会社 光電変換装置、光電変換装置の製造方法、および機器
US11469264B2 (en) * 2020-01-30 2022-10-11 Omnivision Technologies, Inc. Flare-blocking image sensor
US11393861B2 (en) * 2020-01-30 2022-07-19 Omnivision Technologies, Inc. Flare-suppressing image sensor
WO2021215303A1 (ja) * 2020-04-20 2021-10-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
JP2022157160A (ja) * 2021-03-31 2022-10-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置
JPWO2022220084A1 (enExample) * 2021-04-15 2022-10-20
JP2022185900A (ja) * 2021-06-03 2022-12-15 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
JP2023069162A (ja) * 2021-11-05 2023-05-18 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090266973A1 (en) * 2008-04-24 2009-10-29 Stmicroelectronics Crolles 2 Sas Very small image sensor
CN101770084A (zh) * 2008-12-31 2010-07-07 三星电子株式会社 具有像素化图案的光学调制器
US20110108939A1 (en) * 2009-11-10 2011-05-12 Stmicroelectronics (Crolles 2) Sas Method for forming a back-side illuminated image sensor

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177293B1 (en) * 1999-05-20 2001-01-23 Tower Semiconductor Ltd. Method and structure for minimizing white spots in CMOS image sensors
JP2004104203A (ja) * 2002-09-05 2004-04-02 Toshiba Corp 固体撮像装置
CN1661806A (zh) * 2004-02-24 2005-08-31 三洋电机株式会社 固体摄像元件和固体摄像元件的制造方法
JP4525144B2 (ja) * 2004-04-02 2010-08-18 ソニー株式会社 固体撮像素子及びその製造方法
JP4505488B2 (ja) * 2007-09-05 2010-07-21 シャープ株式会社 固体撮像素子および電子情報機器
JP4751865B2 (ja) * 2007-09-10 2011-08-17 富士フイルム株式会社 裏面照射型固体撮像素子及びその製造方法
JP4621719B2 (ja) * 2007-09-27 2011-01-26 富士フイルム株式会社 裏面照射型撮像素子
JP2009206356A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 固体撮像装置およびその製造方法
US20100144084A1 (en) * 2008-12-05 2010-06-10 Doan Hung Q Optical waveguide structures for an image sensor
JP4816768B2 (ja) * 2009-06-22 2011-11-16 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
KR101776955B1 (ko) * 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
JP2011040647A (ja) * 2009-08-17 2011-02-24 Hitachi Ltd 固体撮像素子
JP5539907B2 (ja) * 2010-03-31 2014-07-02 パナソニック株式会社 表示パネル装置及び表示パネル装置の製造方法
US8692304B2 (en) * 2010-08-03 2014-04-08 Himax Imaging, Inc. Image sensor
JP5682174B2 (ja) * 2010-08-09 2015-03-11 ソニー株式会社 固体撮像装置とその製造方法、並びに電子機器
TWI495056B (zh) * 2012-04-24 2015-08-01 新世紀光電股份有限公司 基板結構

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090266973A1 (en) * 2008-04-24 2009-10-29 Stmicroelectronics Crolles 2 Sas Very small image sensor
CN101770084A (zh) * 2008-12-31 2010-07-07 三星电子株式会社 具有像素化图案的光学调制器
US20110108939A1 (en) * 2009-11-10 2011-05-12 Stmicroelectronics (Crolles 2) Sas Method for forming a back-side illuminated image sensor

Also Published As

Publication number Publication date
KR102115046B1 (ko) 2020-05-25
JP2013243324A (ja) 2013-12-05
US10074684B2 (en) 2018-09-11
US20150091122A1 (en) 2015-04-02
CN104303305A (zh) 2015-01-21
WO2013175742A1 (en) 2013-11-28
KR20150027044A (ko) 2015-03-11
JP6168331B2 (ja) 2017-07-26

Similar Documents

Publication Publication Date Title
CN104303305B (zh) 成像装置
US10855893B2 (en) Solid-state imaging device with uneven structures and method for manufacturing the same, and electronic apparatus
TWI387101B (zh) 固態攝影裝置及其製造方法
JP6021439B2 (ja) 固体撮像装置
US9591242B2 (en) Black level control for image sensors
CN106057833A (zh) 影像感测器
KR20210043002A (ko) 고체 촬상 장치 및 그 제조 방법 및 전자 기기
CN101853871A (zh) 固态成像装置及其制造方法以及电子设备
CN103261926A (zh) 滤色片、固态成像元件、液晶显示装置以及电子信息设备
KR20110049303A (ko) 배수 통로를 갖는 광차단 금속배선이 있는 시모스 이미지 센서 및 제조 방법
TWI856976B (zh) 固態攝像裝置及電子機器
KR101057653B1 (ko) 이미지 센서 및 그 제조 방법
JP2018093234A (ja) 固体撮像装置およびその製造方法
KR100829378B1 (ko) 이미지 센서 및 이의 제조 방법
CN114902658B (zh) 固态摄像装置
JP2013016687A (ja) 固体撮像素子
US20240355853A1 (en) Photodetection device and electronic device
JP2008147471A (ja) 固体撮像装置
CN118645513A (zh) 图像传感器及其制作方法、电子设备
KR20240104688A (ko) 이미지 센싱 장치
KR20110065177A (ko) 이미지 센서 및 이미지 센서의 제조 방법
WO2021009816A1 (ja) 固体撮像装置
KR20100074966A (ko) 브리지 방지 금속 배선 구조를 갖는 시모스 이미지 센서 및제조 방법
KR20070027909A (ko) 이미지 소자의 제조 방법
JP2007081114A (ja) 固体撮像装置およびカメラ

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190125