KR102115046B1 - 촬상 장치 - Google Patents

촬상 장치 Download PDF

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Publication number
KR102115046B1
KR102115046B1 KR1020147030033A KR20147030033A KR102115046B1 KR 102115046 B1 KR102115046 B1 KR 102115046B1 KR 1020147030033 A KR1020147030033 A KR 1020147030033A KR 20147030033 A KR20147030033 A KR 20147030033A KR 102115046 B1 KR102115046 B1 KR 102115046B1
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South Korea
Prior art keywords
light
trench
blocking layer
delete delete
pixels
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KR1020147030033A
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English (en)
Korean (ko)
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KR20150027044A (ko
Inventor
히로미 오카자키
마사유키 우치야마
카즈후미 와타나베
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소니 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020147030033A 2012-05-23 2013-05-16 촬상 장치 Expired - Fee Related KR102115046B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-117194 2012-05-23
JP2012117194A JP6168331B2 (ja) 2012-05-23 2012-05-23 撮像素子、および撮像装置
PCT/JP2013/003135 WO2013175742A1 (en) 2012-05-23 2013-05-16 Imaging device

Publications (2)

Publication Number Publication Date
KR20150027044A KR20150027044A (ko) 2015-03-11
KR102115046B1 true KR102115046B1 (ko) 2020-05-25

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147030033A Expired - Fee Related KR102115046B1 (ko) 2012-05-23 2013-05-16 촬상 장치

Country Status (5)

Country Link
US (1) US10074684B2 (enExample)
JP (1) JP6168331B2 (enExample)
KR (1) KR102115046B1 (enExample)
CN (1) CN104303305B (enExample)
WO (1) WO2013175742A1 (enExample)

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JP6303803B2 (ja) * 2013-07-03 2018-04-04 ソニー株式会社 固体撮像装置およびその製造方法
KR102450562B1 (ko) * 2014-03-13 2022-10-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
FR3030884B1 (fr) * 2014-12-19 2016-12-30 Stmicroelectronics (Grenoble 2) Sas Structure de pixel a multiples photosites
JP6570844B2 (ja) * 2015-02-26 2019-09-04 株式会社東芝 光検出器、その製造方法、放射線検出器、および放射線検出装置
US9653511B2 (en) 2015-08-11 2017-05-16 Omnivision Technologies, Inc. CMOS image sensor with peninsular ground contracts and method of manufacturing the same
JP2017168566A (ja) 2016-03-15 2017-09-21 ソニー株式会社 固体撮像素子、および電子機器
CN108231809A (zh) * 2017-12-12 2018-06-29 上海集成电路研发中心有限公司 一种背照式图像传感器及其制备方法
JP2019145544A (ja) 2018-02-16 2019-08-29 ソニーセミコンダクタソリューションズ株式会社 撮像素子
JP2020031136A (ja) 2018-08-22 2020-02-27 キヤノン株式会社 撮像装置およびカメラ
US11244978B2 (en) 2018-10-17 2022-02-08 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment including the same
US11121160B2 (en) 2018-10-17 2021-09-14 Canon Kabushiki Kaisha Photoelectric conversion apparatus and equipment comprising a light shielding part in a light receiving region and a light shielding film in a light shielded region
JP7479801B2 (ja) * 2019-08-27 2024-05-09 ソニーセミコンダクタソリューションズ株式会社 撮像素子、製造方法、および電子機器
KR102696965B1 (ko) * 2019-09-03 2024-08-21 에스케이하이닉스 주식회사 이미지 센서
WO2021095668A1 (ja) * 2019-11-13 2021-05-20 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置およびその製造方法
JP2021086881A (ja) * 2019-11-26 2021-06-03 キヤノン株式会社 光電変換装置、光電変換装置の製造方法、および機器
US11393861B2 (en) * 2020-01-30 2022-07-19 Omnivision Technologies, Inc. Flare-suppressing image sensor
US11469264B2 (en) * 2020-01-30 2022-10-11 Omnivision Technologies, Inc. Flare-blocking image sensor
CN115176343A (zh) * 2020-04-20 2022-10-11 索尼半导体解决方案公司 固态摄像元件和电子设备
JP2022157160A (ja) * 2021-03-31 2022-10-14 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、撮像装置
US20240204014A1 (en) * 2021-04-15 2024-06-20 Sony Semiconductor Solutions Corporation Imaging device
JP2022185900A (ja) * 2021-06-03 2022-12-15 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び電子機器
JP2023069162A (ja) * 2021-11-05 2023-05-18 ソニーセミコンダクタソリューションズ株式会社 撮像素子、電子機器

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US20090266973A1 (en) 2008-04-24 2009-10-29 Stmicroelectronics Crolles 2 Sas Very small image sensor
US20100144084A1 (en) * 2008-12-05 2010-06-10 Doan Hung Q Optical waveguide structures for an image sensor
JP2011003860A (ja) * 2009-06-22 2011-01-06 Sony Corp 固体撮像装置とその製造方法、及び電子機器

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US6177293B1 (en) * 1999-05-20 2001-01-23 Tower Semiconductor Ltd. Method and structure for minimizing white spots in CMOS image sensors
JP2004104203A (ja) * 2002-09-05 2004-04-02 Toshiba Corp 固体撮像装置
CN1661806A (zh) * 2004-02-24 2005-08-31 三洋电机株式会社 固体摄像元件和固体摄像元件的制造方法
JP4525144B2 (ja) * 2004-04-02 2010-08-18 ソニー株式会社 固体撮像素子及びその製造方法
JP4505488B2 (ja) * 2007-09-05 2010-07-21 シャープ株式会社 固体撮像素子および電子情報機器
JP4751865B2 (ja) * 2007-09-10 2011-08-17 富士フイルム株式会社 裏面照射型固体撮像素子及びその製造方法
JP4621719B2 (ja) * 2007-09-27 2011-01-26 富士フイルム株式会社 裏面照射型撮像素子
JP2009206356A (ja) * 2008-02-28 2009-09-10 Toshiba Corp 固体撮像装置およびその製造方法
KR101520029B1 (ko) * 2008-12-31 2015-05-15 삼성전자주식회사 고정세화 패턴을 갖는 광 변조기
KR101776955B1 (ko) * 2009-02-10 2017-09-08 소니 주식회사 고체 촬상 장치와 그 제조 방법, 및 전자 기기
JP2011040647A (ja) * 2009-08-17 2011-02-24 Hitachi Ltd 固体撮像素子
FR2954587B1 (fr) 2009-11-10 2012-07-20 St Microelectronics Sa Procede de formation d'un capteur d'images eclaire par la face arriere
JP5539907B2 (ja) * 2010-03-31 2014-07-02 パナソニック株式会社 表示パネル装置及び表示パネル装置の製造方法
US8692304B2 (en) * 2010-08-03 2014-04-08 Himax Imaging, Inc. Image sensor
JP5682174B2 (ja) * 2010-08-09 2015-03-11 ソニー株式会社 固体撮像装置とその製造方法、並びに電子機器
TWI495056B (zh) * 2012-04-24 2015-08-01 新世紀光電股份有限公司 基板結構

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Publication number Priority date Publication date Assignee Title
US20090266973A1 (en) 2008-04-24 2009-10-29 Stmicroelectronics Crolles 2 Sas Very small image sensor
US20100144084A1 (en) * 2008-12-05 2010-06-10 Doan Hung Q Optical waveguide structures for an image sensor
JP2011003860A (ja) * 2009-06-22 2011-01-06 Sony Corp 固体撮像装置とその製造方法、及び電子機器

Also Published As

Publication number Publication date
KR20150027044A (ko) 2015-03-11
WO2013175742A1 (en) 2013-11-28
JP2013243324A (ja) 2013-12-05
US20150091122A1 (en) 2015-04-02
CN104303305B (zh) 2019-01-25
US10074684B2 (en) 2018-09-11
JP6168331B2 (ja) 2017-07-26
CN104303305A (zh) 2015-01-21

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