CN104301839B - Mems器件、接口电路及其制作方法 - Google Patents
Mems器件、接口电路及其制作方法 Download PDFInfo
- Publication number
- CN104301839B CN104301839B CN201410342001.4A CN201410342001A CN104301839B CN 104301839 B CN104301839 B CN 104301839B CN 201410342001 A CN201410342001 A CN 201410342001A CN 104301839 B CN104301839 B CN 104301839B
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- plate
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- coupled
- mems
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- 239000000758 substrate Substances 0.000 claims description 37
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- 238000005859 coupling reaction Methods 0.000 claims description 33
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- 238000000034 method Methods 0.000 claims description 23
- 239000003990 capacitor Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 40
- 239000010408 film Substances 0.000 description 19
- 238000010276 construction Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 9
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- 230000008021 deposition Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
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- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
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- 238000000926 separation method Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
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- 241000208340 Araliaceae Species 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 2
- 235000003140 Panax quinquefolius Nutrition 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 235000008434 ginseng Nutrition 0.000 description 2
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- 102220092594 rs185006459 Human genes 0.000 description 2
- 102220062232 rs786203513 Human genes 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000009623 Bosch process Methods 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 239000004341 Octafluorocyclobutane Substances 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 241000209140 Triticum Species 0.000 description 1
- 235000021307 Triticum Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 210000004883 areola Anatomy 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 1
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/50—Amplifiers in which input is applied to, or output is derived from, an impedance common to input and output circuits of the amplifying element, e.g. cathode follower
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Multimedia (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361847874P | 2013-07-18 | 2013-07-18 | |
| US61/847,874 | 2013-07-18 | ||
| US14/255,703 US9179221B2 (en) | 2013-07-18 | 2014-04-17 | MEMS devices, interface circuits, and methods of making thereof |
| US14/255,703 | 2014-04-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104301839A CN104301839A (zh) | 2015-01-21 |
| CN104301839B true CN104301839B (zh) | 2018-01-09 |
Family
ID=52131515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410342001.4A Active CN104301839B (zh) | 2013-07-18 | 2014-07-17 | Mems器件、接口电路及其制作方法 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104301839B (de) |
| DE (1) | DE102014109908A1 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9806687B2 (en) * | 2016-03-23 | 2017-10-31 | Infineon Technologies Ag | System and method for signal amplification using a resistance network |
| DE102017204006B3 (de) * | 2017-03-10 | 2018-08-02 | Infineon Technologies Ag | MEMS-Schallwandler, MEMS-Mikrophon und Verfahren zum Bereitstellen eines MEMS-Schallwandlers |
| DE102017223869B4 (de) * | 2017-12-29 | 2021-09-02 | Infineon Technologies Ag | MEMS-Bauelement und mobiles Gerät mit dem MEMS-Bauelement |
| CN113423050B (zh) * | 2021-06-18 | 2024-03-08 | 杭州士兰微电子股份有限公司 | Mems系统 |
| DE102021126505A1 (de) | 2021-10-13 | 2023-04-13 | Infineon Technologies Ag | Gassensor enthaltend einen ultraschallresonator und verwendung für die detektion von gasen |
| CN117354705B (zh) * | 2023-12-04 | 2024-02-13 | 苏州敏芯微电子技术股份有限公司 | 声电转换结构及其制作方法、以及麦克风、电子设备 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102957992A (zh) * | 2011-08-15 | 2013-03-06 | 哈曼国际工业有限公司 | 双背板传声器 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6970031B1 (en) * | 2004-05-28 | 2005-11-29 | Hewlett-Packard Development Company, L.P. | Method and apparatus for reducing charge injection in control of MEMS electrostatic actuator array |
| EP2432249A1 (de) * | 2010-07-02 | 2012-03-21 | Knowles Electronics Asia PTE. Ltd. | Mikrofon |
| US9148726B2 (en) * | 2011-09-12 | 2015-09-29 | Infineon Technologies Ag | Micro electrical mechanical system with bending deflection of backplate structure |
| US9179221B2 (en) | 2013-07-18 | 2015-11-03 | Infineon Technologies Ag | MEMS devices, interface circuits, and methods of making thereof |
-
2014
- 2014-07-15 DE DE102014109908.7A patent/DE102014109908A1/de active Pending
- 2014-07-17 CN CN201410342001.4A patent/CN104301839B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102957992A (zh) * | 2011-08-15 | 2013-03-06 | 哈曼国际工业有限公司 | 双背板传声器 |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102014109908A1 (de) | 2015-01-22 |
| CN104301839A (zh) | 2015-01-21 |
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| GR01 | Patent grant | ||
| GR01 | Patent grant |