CN104300060A - 一种具有组分渐变缓冲层的绿光led结构 - Google Patents
一种具有组分渐变缓冲层的绿光led结构 Download PDFInfo
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- CN104300060A CN104300060A CN201410535822.XA CN201410535822A CN104300060A CN 104300060 A CN104300060 A CN 104300060A CN 201410535822 A CN201410535822 A CN 201410535822A CN 104300060 A CN104300060 A CN 104300060A
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- 230000003139 buffering effect Effects 0.000 title abstract 4
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 7
- 239000010980 sapphire Substances 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 241001025261 Neoraja caerulea Species 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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CN201410535822.XA CN104300060A (zh) | 2014-10-11 | 2014-10-11 | 一种具有组分渐变缓冲层的绿光led结构 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105047772A (zh) * | 2015-06-08 | 2015-11-11 | 中国科学院半导体研究所 | 绿光led芯片外延层的结构及生长方法 |
CN105261683A (zh) * | 2015-11-03 | 2016-01-20 | 湘能华磊光电股份有限公司 | 一种提高led外延晶体质量的外延生长方法 |
CN105914276A (zh) * | 2016-06-30 | 2016-08-31 | 映瑞光电科技(上海)有限公司 | 一种发光二级管的外延结构及其制备方法 |
CN110265514A (zh) * | 2019-04-28 | 2019-09-20 | 华灿光电(苏州)有限公司 | 发光二极管外延片的生长方法及发光二极管外延片 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6667498B2 (en) * | 2001-06-07 | 2003-12-23 | Nippon Telegraph And Telephone Corporation | Nitride semiconductor stack and its semiconductor device |
CN103178173A (zh) * | 2013-03-13 | 2013-06-26 | 扬州中科半导体照明有限公司 | 高亮度GaN基绿光LED的MQW结构 |
CN102664145B (zh) * | 2012-05-16 | 2014-08-27 | 东莞市中镓半导体科技有限公司 | 采用金属有机化合物气相外延技术生长非对称电子储蓄层高亮度发光二极管的方法 |
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2014
- 2014-10-11 CN CN201410535822.XA patent/CN104300060A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6667498B2 (en) * | 2001-06-07 | 2003-12-23 | Nippon Telegraph And Telephone Corporation | Nitride semiconductor stack and its semiconductor device |
CN102664145B (zh) * | 2012-05-16 | 2014-08-27 | 东莞市中镓半导体科技有限公司 | 采用金属有机化合物气相外延技术生长非对称电子储蓄层高亮度发光二极管的方法 |
CN103178173A (zh) * | 2013-03-13 | 2013-06-26 | 扬州中科半导体照明有限公司 | 高亮度GaN基绿光LED的MQW结构 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105047772A (zh) * | 2015-06-08 | 2015-11-11 | 中国科学院半导体研究所 | 绿光led芯片外延层的结构及生长方法 |
CN105047772B (zh) * | 2015-06-08 | 2018-03-23 | 中国科学院半导体研究所 | 绿光led芯片外延层的结构及生长方法 |
CN105261683A (zh) * | 2015-11-03 | 2016-01-20 | 湘能华磊光电股份有限公司 | 一种提高led外延晶体质量的外延生长方法 |
CN105261683B (zh) * | 2015-11-03 | 2017-10-10 | 湘能华磊光电股份有限公司 | 一种提高led外延晶体质量的外延生长方法 |
CN105914276A (zh) * | 2016-06-30 | 2016-08-31 | 映瑞光电科技(上海)有限公司 | 一种发光二级管的外延结构及其制备方法 |
CN110265514A (zh) * | 2019-04-28 | 2019-09-20 | 华灿光电(苏州)有限公司 | 发光二极管外延片的生长方法及发光二极管外延片 |
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Effective date of registration: 20160620 Address after: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South) Applicant after: BEIJING UNIVERSITY OF TECHNOLOGY Address before: 100124 Chaoyang District, Beijing Ping Park, No. 100 Applicant before: Beijing University of Technology |
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Address after: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South) Applicant after: China Semiconductor Technology Co., Ltd. Address before: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South) Applicant before: BEIJING UNIVERSITY OF TECHNOLOGY |
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