CN104282812A - 一种具有p型缓冲层的GaN基绿光LED结构及其生长方法 - Google Patents

一种具有p型缓冲层的GaN基绿光LED结构及其生长方法 Download PDF

Info

Publication number
CN104282812A
CN104282812A CN201410536347.8A CN201410536347A CN104282812A CN 104282812 A CN104282812 A CN 104282812A CN 201410536347 A CN201410536347 A CN 201410536347A CN 104282812 A CN104282812 A CN 104282812A
Authority
CN
China
Prior art keywords
gan
layer
type
temperature
green light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201410536347.8A
Other languages
English (en)
Other versions
CN104282812B (zh
Inventor
王智勇
张杨
杨翠柏
杨光辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing University of Technology
Original Assignee
Beijing University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing University of Technology filed Critical Beijing University of Technology
Priority to CN201410536347.8A priority Critical patent/CN104282812B/zh
Publication of CN104282812A publication Critical patent/CN104282812A/zh
Application granted granted Critical
Publication of CN104282812B publication Critical patent/CN104282812B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

一种具有p型缓冲层的GaN基绿光LED结构及其生长方法，由下至上依次包括蓝宝石衬底层、GaN成核层、非掺杂GaN层、n型GaN层、低温InxGa1-xN/GaN多量子阱层和高温p型GaN层，其特点是在低温InxGa1-xN/GaN多量子阱层与高温p型GaN层之间生长p型缓冲层。本发明的该p型缓冲层由多层组分渐变的p型InyGa1-yN薄层组成，生长温度由下至上逐渐增加。相比于传统外延结构，本发明可有效地实现温度渐变，降低高温p型GaN层生长时对低温InGaN量子阱结构的破坏，提高外延片的抗静电能力，从而降低芯片击穿率，提高芯片发光效率。

Description

一种具有p型缓冲层的GaN基绿光LED结构及其生长方法
技术领域
本发明涉及光电子学技术领域，尤其涉及一种GaN基绿光LED结构及其生长方法。
背景技术
目前市场上已经开始出现越来越多的绿光LED相关产品，绿光LED应用范围广泛，可以应用于室内外大型显示屏、交通信号灯、背光源(平板电脑、手机显示屏等)、便携式照明系统、固定彩色照明系统、光学存储系统等多个领域。绿光LED相关产品的市场份额也在逐渐增大，市场对绿光LED产品的性能要求也越来越高。如何获得高高度、高质量的绿光LED产品成为现在研究的热点。
但是，由于绿光LED外延生长工艺中的量子阱InGaN材料中的In组分(20％--35％)要比蓝光LED中(10％--20％)高很多，将意味着在生长绿光LED量子阱材料时需要比蓝光量子阱更低的生长温度。传统的外延生长过程中，通常在低温多量子阱材料生长结束后，直接生长高温p型GaN层，该外延过程由于生长温度相差较大，容易对临近周期的InGaN量子阱造成破坏，使InGaN材料的In组分析出，导致抗静电能力变差。
发明内容
本发明针对现有技术的不足，提出一种具有p型缓冲层的GaN基绿光LED结构及其生长方法，提高LED的抗静电能力，降低芯片击穿率，提高芯片发光效率。
本发明的技术方案是一种具有p型缓冲层的GaN基LED绿光结构，由下至上依次包括蓝宝石衬底层、GaN成核层、非掺杂GaN层、n型GaN层、低温InxGa1-xN/GaN多量子阱层和高温p型GaN层，其特点是在低温InxGa1-xN/GaN多量子阱层与高温p型GaN层之间生长p型缓冲层。
所述的p型缓冲层由多层不同In组分的p型InyGa1-yN薄层组成，所述的多层InyGa1-yN薄层生长在低温InxGa1-xN/GaN多量子阱结构层上，所述的多层InyGa1-yN薄层In组分从下至上逐渐变小，其中0<y<x.
一种具有p型缓冲层的GaN基绿光LED结构的生长方法，其特点是在蓝宝石衬底上依次生长GaN成核层、非掺杂GaN层、n型GaN层、低温InxGa1-xN/GaN多量子阱层、p型缓冲层和高温p型GaN层。
所述的p型缓冲层由多层不同In组分的p型InyGa1-yN薄层组成，所述的多层p型InyGa1-yN薄层In组分从下至上逐渐变小，且0<y<x，所述的多层InyGa1-yN薄层的生长温度在低温InxGa1-xN/GaN多量子阱层和高温n型GaN层的生长温度之间，且生长温度从下至上逐渐升高。
本发明的技术优势在于：本发明在低温InGaN多量子阱结构层与高温p型GaN材料层之间设置了p型缓冲层，该p型缓冲层由多层组分渐变的p型InyGa1-yN薄层组成，生长温度由下至上逐渐增加。相比于传统外延结构，本发明可有效地实现温度渐变，降低高温p型GaN层生长时对低温InGaN量子阱结构的破坏，提高外延片的抗静电能力，从而降低芯片击穿率，提高芯片发光效率。
附图说明
图1为本发明的结构示意图。
图中：1、蓝宝石衬底层，2、GaN成核层，3、非掺杂GaN层，4、n型GaN层，5、低温InxGa1-xN/GaN多量子阱层，6、p型缓冲层，7、高温p型GaN层。
具体实施方式
如图1所示，一种具有p型缓冲层的GaN基LED绿光结构，在蓝宝石衬底层1上依次生长GaN成核层2、非掺杂GaN层3、n型GaN层4、低温InxGa1-xN/GaN多量子阱层5、p型缓冲层6、高温p型GaN层7。
一种具有p型缓冲层的GaN基LED绿光结构，由下至上依次包括蓝宝石衬底层1、GaN成核层2、非掺杂GaN层3、n型GaN层4、低温InxGa1-xN/GaN多量子阱层5和高温p型GaN层6，其特点是在低温InxGa1-xN/GaN多量子阱层5与高温p型GaN层7之间生长p型缓冲层6。
所述的p型缓冲层6由多层不同In组分的p型InyGa1-yN薄层组成，所述的多层InyGa1-yN薄层生长在低温InxGa1-xN/GaN多量子阱结构层5上，所述的多层InyGa1-yN薄层In组分从下至上逐渐变小，其中0<y<x。
一种具有p型缓冲层的GaN基绿光LED结构的生长方法，其特点是在蓝宝石衬底1上依次生长GaN成核层2、非掺杂GaN层3、n型GaN层4、低温InxGa1-xN/GaN多量子阱层5、p型缓冲层6和高温p型GaN层7。
所述的p型缓冲层6由多层不同In组分的p型InyGa1-yN薄层组成，所述的多层InyGa1-yN薄层的生长温度在低温InxGa1-xN/GaN多量子阱层5和高温n型GaN层的生长温度7之间，且生长温度从下至上逐渐升高。

Claims (3)

1.一种具有p型缓冲层的GaN基LED绿光结构，其特征在于：在蓝宝石衬底层(1)上依次生长GaN成核层(2)、非掺杂GaN层(3)、n型GaN层(4)、低温InxGa1-xN/GaN多量子阱层(5)、p型缓冲层(6)、高温p型GaN层(7)；
该结构由下至上依次包括蓝宝石衬底层(1)、GaN成核层(2)、非掺杂GaN层(3)、n型GaN层(4)、低温InxGa1-xN/GaN多量子阱层(5)和高温p型GaN层(6)，在低温InxGa1-xN/GaN多量子阱层(5)与高温p型GaN层(7)之间生长p型缓冲层(6)；在蓝宝石衬底(1)上依次生长GaN成核层(2)、非掺杂GaN层(3)、n型GaN层(4)、低温InxGa1-xN/GaN多量子阱层(5)、p型缓冲层(6)和高温p型GaN层(7)。
2.根据权利要求1所述的一种具有p型缓冲层的GaN基LED绿光结构，其特征在于：所述的p型缓冲层(6)由多层不同In组分的p型InyGa1-yN薄层组成，所述的多层InyGa1-yN薄层生长在低温InxGa1-xN/GaN多量子阱结构层(5)上，所述的多层InyGa1-yN薄层In组分从下至上逐渐变小，其中0<y<x。
3.根据权利要求1所述的一种具有p型缓冲层的GaN基LED绿光结构，其特征在于：所述的p型缓冲层(6)由多层不同In组分的p型InyGa1-yN薄层组成，所述的多层InyGa1-yN薄层的生长温度在低温InxGa1-xN/GaN多量子阱层(5)和高温n型GaN层的生长温度(7)之间，且生长温度从下至上逐渐升高。
CN201410536347.8A 2014-10-11 2014-10-11 一种具有p型缓冲层的GaN基绿光LED结构及其生长方法 Active CN104282812B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410536347.8A CN104282812B (zh) 2014-10-11 2014-10-11 一种具有p型缓冲层的GaN基绿光LED结构及其生长方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410536347.8A CN104282812B (zh) 2014-10-11 2014-10-11 一种具有p型缓冲层的GaN基绿光LED结构及其生长方法

Publications (2)

Publication Number Publication Date
CN104282812A true CN104282812A (zh) 2015-01-14
CN104282812B CN104282812B (zh) 2018-04-27

Family

ID=52257504

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410536347.8A Active CN104282812B (zh) 2014-10-11 2014-10-11 一种具有p型缓冲层的GaN基绿光LED结构及其生长方法

Country Status (1)

Country Link
CN (1) CN104282812B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105932118A (zh) * 2016-06-13 2016-09-07 湘能华磊光电股份有限公司 提高空穴注入的led外延生长方法
CN107146836A (zh) * 2017-05-26 2017-09-08 华南理工大学 具有渐变In组分p型InGaN导电层的GaN基绿光LED外延结构及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020003234A1 (en) * 2000-07-10 2002-01-10 Sanyo Electric Co., Ltd. Nitride based semiconductor light emitting device
CN101281940A (zh) * 2007-04-04 2008-10-08 华南师范大学 一种GaN基量子阱LED外延片及制备方法
CN101834248A (zh) * 2010-04-21 2010-09-15 中国科学院半导体研究所 氮化镓系发光二极管
CN103022285A (zh) * 2013-01-10 2013-04-03 合肥彩虹蓝光科技有限公司 一种提高led亮度的多量子阱层生长方法
CN103346217A (zh) * 2013-07-10 2013-10-09 合肥彩虹蓝光科技有限公司 一种提高led发光二极管亮度的量子垒设计方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020003234A1 (en) * 2000-07-10 2002-01-10 Sanyo Electric Co., Ltd. Nitride based semiconductor light emitting device
CN101281940A (zh) * 2007-04-04 2008-10-08 华南师范大学 一种GaN基量子阱LED外延片及制备方法
CN101834248A (zh) * 2010-04-21 2010-09-15 中国科学院半导体研究所 氮化镓系发光二极管
CN103022285A (zh) * 2013-01-10 2013-04-03 合肥彩虹蓝光科技有限公司 一种提高led亮度的多量子阱层生长方法
CN103346217A (zh) * 2013-07-10 2013-10-09 合肥彩虹蓝光科技有限公司 一种提高led发光二极管亮度的量子垒设计方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105932118A (zh) * 2016-06-13 2016-09-07 湘能华磊光电股份有限公司 提高空穴注入的led外延生长方法
CN107146836A (zh) * 2017-05-26 2017-09-08 华南理工大学 具有渐变In组分p型InGaN导电层的GaN基绿光LED外延结构及其制备方法

Also Published As

Publication number Publication date
CN104282812B (zh) 2018-04-27

Similar Documents

Publication Publication Date Title
CN104201262B (zh) 一种InGaN/AlGaN-GaN基多量子阱结构及其制备方法
CN102157646A (zh) 一种氮化物led结构及其制备方法
US20160351750A1 (en) Fabrication Method of Nitride Light Emitting Diodes
CN105336821A (zh) GaN基LED外延结构及其制备方法
KR101737981B1 (ko) 마이크로 어레이 형태의 질화물 발광 소자 및 그 제조 방법
KR20140117117A (ko) 질화물 반도체 발광소자
CN103178176A (zh) 应用MQW生长的绿光GaN基LED外延结构
CN104300060A (zh) 一种具有组分渐变缓冲层的绿光led结构
US8461029B2 (en) Method for fabricating InGaN-based multi-quantum well layers
CN104282812A (zh) 一种具有p型缓冲层的GaN基绿光LED结构及其生长方法
CN103178177A (zh) 一种绿光GaN基LED外延结构
CN105304778A (zh) 提高GaN基LED抗静电性能的外延结构及其制备方法
CN103178173A (zh) 高亮度GaN基绿光LED的MQW结构
CN103985799A (zh) 发光二极管及其制作方法
KR20130120591A (ko) 질화물 반도체 발광소자 및 그 제조방법
CN203192830U (zh) 高亮度GaN基绿光LED的MQW结构
CN103996766A (zh) 氮化镓基发光二极管及其制备方法
CN104064644A (zh) Led的量子阱结构、其制作方法及包括其的led外延片
CN104952994A (zh) 一种Al组分渐变式P型LED结构及制备方法
US9240518B2 (en) Light emitting diode device having super lattice structure and a nano-structure layer
CN101840971B (zh) 一种发光二极管及其制造方法
CN203367343U (zh) 一种发光二极管外延片发光层
CN104934507A (zh) Led外延结构及其制备方法
Li et al. Advancements in InGaN-based Red Micro-LEDs
CN203192832U (zh) 一种绿光GaN基LED外延结构

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20160629

Address after: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South)

Applicant after: BEIJING UNIVERSITY OF TECHNOLOGY

Address before: 100124 Chaoyang District, Beijing Ping Park, No. 100

Applicant before: Beijing University of Technology

CB02 Change of applicant information

Address after: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South)

Applicant after: China Semiconductor Technology Co., Ltd.

Address before: 225500 Taizhou science and Technology Industrial Park, Jiangyan District, Jiangsu (east side of the South)

Applicant before: BEIJING UNIVERSITY OF TECHNOLOGY

CB02 Change of applicant information
GR01 Patent grant
GR01 Patent grant