CN104300005A - 薄膜晶体管、阵列基板和显示装置 - Google Patents
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78636—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with supplementary region or layer for improving the flatness of the device
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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Abstract
本发明属于显示技术领域,具体涉及一种薄膜晶体管、阵列基板和显示装置。一种薄膜晶体管,所述薄膜晶体管包括栅极、源极、漏极以及设置于所述源极、所述漏极与所述栅极之间的半导体层和绝缘层,其中,所述绝缘层采用无机绝缘材料形成,所述绝缘层和所述半导体层之间、且与所述绝缘层对应的区域设置有修饰层,所述修饰层采用有机脂肪族硅烷材料形成。该薄膜晶体管绝缘层表面更加平坦,具有较小表面缺陷态或基本无表面缺陷态,从而具有较高迁移率和开关比的特性,具有较佳性能。
Description
技术领域
本发明属于显示技术领域,具体涉及一种薄膜晶体管、阵列基板和显示装置。
背景技术
随着信息技术发展的不断深入,人们对电子显示装置产品的画面显示品质的要求也逐渐的提高,相应的也对作为显示装置产品核心部件的阵列基板提出了较高要求,要求其可以具有较高的性能参数。
其中,阵列基板中包括多个呈矩阵排列的薄膜晶体管(ThinFilm Transistor:简称TFT),通过薄膜晶体管的开关控制,实现图像的显示。目前,薄膜晶体管的结构包括栅极、源极、漏极以及设置于源极、漏极与栅极之间的半导体层和绝缘层,其中的绝缘层多采用无机绝缘材料形成,其一方面有较好的绝缘效果;但另一方面,无机绝缘材料具有较强的亲水性,且表面不平整,易于产生表面缺陷态,导致薄膜晶体管传输电子过程中有效电子数目减少,降低了薄膜晶体管的迁移率和开关比特性,导致薄膜晶体管的性能降低。
可见,设计一种具有较小表面缺陷态或基本无表面缺陷态,从而具有较高迁移率和开关比的特性的薄膜晶体管成为目前亟待解决的技术问题。
发明内容
本发明所要解决的技术问题是针对现有技术中存在的上述不足,提供一种薄膜晶体管、阵列基板和显示装置,该薄膜晶体管绝缘层表面更加平坦,具有较小表面缺陷态或基本无表面缺陷态,从而具有较高迁移率和开关比的特性,具有较佳性能。
解决本发明技术问题所采用的技术方案是该薄膜晶体管,所述薄膜晶体管包括栅极、源极、漏极以及设置于所述源极、所述漏极与所述栅极之间的半导体层和绝缘层,其中,所述绝缘层采用无机绝缘材料形成,所述绝缘层和所述半导体层之间、且与所述绝缘层对应的区域设置有修饰层,所述修饰层采用有机脂肪族硅烷材料形成。
优选的是,所述绝缘层采用包括含有硅原子的材料形成,所述修饰层采用含有氯原子的硅烷偶联剂形成。
优选的是,所述绝缘层为采用二氧化硅或氮化硅形成的单层或叠层结构,所述修饰层为采用十四烷基三氯硅烷、十六烷基三氯硅烷、十八烷基三氯硅烷或二十烷基三氯硅烷形成的薄膜结构。
优选的是,形成所述修饰层的材料的相对介电常数的范围为2.5-3.5。
优选的是,所述修饰层的厚度范围为50-300nm。
优选的是,所述修饰层采用涂覆方式成膜。
优选的是,所述薄膜晶体管从下至上依次为所述栅极、所述绝缘层、所述修饰层、所述半导体层以及同层设置的所述源极和所述漏极;
或者,所述薄膜晶体管从下至上依次为同层设置的所述源极和所述漏极、所述半导体层、所述修饰层、所述绝缘层以及所述栅极。
优选的是,所述绝缘层采用等离子体增强化学气相沉积法成膜,所述半导体层采用等离子体增强化学气相沉积法成膜,所述栅极采用磁控溅射法形成,所述源极和所述漏极采用磁控溅射法沉积法成膜。
一种阵列基板,包括上述的薄膜晶体管。
一种显示装置,包括上述的阵列基板。
本发明的有益效果是:该采用了修饰层的薄膜晶体管,相对无修饰层的薄膜晶体管,具有更高的迁移率、更好的导通电流和关断电流特性,该薄膜晶体管具有较佳性能;
相应的,使得包括该薄膜晶体管的阵列基板具有较佳的控制效果;
相应的,使得包括该阵列基板的显示装置具有更好的显示效果。
附图说明
图1为本发明实施例1中薄膜晶体管的结构示意图;
图2为本图1中采用二十烷基三氯硅烷材料化学修饰绝缘层的示意图;
附图标记中:
1-栅极;2-绝缘层;3-修饰层;4-半导体层;5-源极;6-漏极。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明薄膜晶体管、阵列基板和显示装置作进一步详细描述。
本发明的技术构思在于,针对无机绝缘材料形成的绝缘层具有较强的亲水性,且表面不平整而易于产生表面缺陷态的问题,利用有机材料层比无机绝缘材料层(例如二氧化硅SiO2、氮化硅SiNx形成的层)表面平坦的特性,对无机绝缘材料形成的绝缘层表面引入低相对介电常数的有机脂肪族硅烷作为修饰层,使无机绝缘材料形成的绝缘层更加平坦,且利用形成修饰层的有机脂肪族硅烷本身可与无机绝缘材料形成的绝缘层表面的悬挂价发生化学反应的性质,减少绝缘层表面缺陷态对电子的捕获,增加有效电子的相对数目,实现了薄膜晶体管的高迁移率和开关比的特性。
实施例1:
本实施例提供一种薄膜晶体管,薄膜晶体管包括栅极、源极、漏极以及设置于源极、漏极与栅极之间的半导体层和绝缘层,其中,绝缘层采用无机绝缘材料形成,绝缘层和半导体层之间、且与绝缘层对应的区域设置有修饰层,修饰层采用有机脂肪族硅烷材料形成。
如图1所示是本实施例中薄膜晶体管的结构示意图,该薄膜晶体管从下至上依次为栅极1、绝缘层2、修饰层3、半导体层4以及同层设置的源极5和漏极6。其中,绝缘层2采用包括含有硅原子的材料形成,修饰层3采用含有氯原子的硅烷偶联剂形成。
其中,硅烷偶联剂是一类在分子中同时含有两种不同化学性质基团的有机硅化合物,其经典产物可用通式YSiX3表示。式中,Y为非水解基团,包括链烯基(主要为乙烯基),以及末端带有Cl、NH2、SH、环氧、N3、(甲基)丙烯酰氧基、异氰酸酯基等官能团的烃基,即碳官能基;X为可水解基团,包括Cl、OMe、OEt、OC2H4OCH3、OSiMe3及OAc等。由于这一特殊结构,在其分子中同时具有能和无机质材料(如玻璃、硅砂、金属等)化学结合的反应基团及与有机质材料(合成树脂等)化学结合的反应基团,可以用于表面处理。在本实施例中,含有氯原子的硅烷偶联剂的通式为H(CH2)nSiCl3,优选n=7,8,9,10。
在本实施例中,考虑对于薄膜晶体管的性能改善效果,优选形成修饰层3的材料的相对介电常数的范围为2.5-3,由于其相对介电常数小于无机绝缘材料的相对介电常数,因此可减小薄膜晶体管及包括该薄膜晶体管的相应的阵列基板和显示装置的功耗。
具体的,绝缘层2为采用二氧化硅SiO2或氮化硅SiNx形成的单层或叠层结构,含有氯原子的硅烷偶联剂形成的修饰层3为采用十四烷基三氯硅烷(分子式为C14H29Si Cl3)、十六烷基三氯硅烷(分子式为C16H33Si Cl3)、十八烷基三氯硅烷(分子式为C18H37SiCl3)或二十烷基三氯硅烷(分子式为C20H41Si Cl3)形成的薄膜结构。
通常情况下,薄膜晶体管的各层结构通过构图工艺形成,应该理解,在本发明中,构图工艺,可只包括光刻工艺,或,包括光刻工艺以及刻蚀步骤,同时还可以包括打印、喷墨等其他用于形成预定图形的工艺;光刻工艺,是指包括成膜、曝光、显影等工艺过程的利用光刻胶、掩模板、曝光机等形成图形的工艺。可根据本发明中所形成的结构选择相应的构图工艺。
具体的,本实施例中薄膜晶体管的制备过程中:首先通过构图工艺形成包括栅极1的图形,在栅极1的上方通过构图工艺形成包括由无机绝缘材料形成的绝缘层2;接着在绝缘层2对应区域的上方通过构图工艺形成由有机脂肪族硅烷材料形成的修饰层3,修饰层3对绝缘层2进行有机溶剂的修饰,如图2所示为图1中采用二十烷基三氯硅烷材料化学修饰绝缘层的示意图,形成修饰层3的二十烷基三氯硅烷材料本身可与无机绝缘材料形成的绝缘层2表面的二氧化硅或氮化硅悬挂价发生化学反应,即绝缘层2中的硅原子被修饰层3中含氯原子的硅烷取代,氯原子和OH结合;然后在修饰后的绝缘层2上方(也即修饰层3的上方)通过构图工艺形成半导体层4,进而在半导体层4的上方通过构图工艺形成源极5和漏极6。
在本实施例的薄膜晶体管的制备过程中,修饰层3采用涂覆(例如旋涂)方式成膜,修饰层3的厚度范围为50-300nm,以便能对绝缘层2取得较好的修饰效果。另外,绝缘层2采用等离子体增强化学气相沉积法成膜,绝缘层2的厚度范围为半导体层4采用等离子体增强化学气相沉积法成膜,半导体层4的厚度范围为栅极1采用磁控溅射法成膜,栅极1的厚度范围为源极5和漏极6采用磁控溅射法沉积法成膜,源极5和漏极6的厚度范围为
上述薄膜晶体管中,由于采用有机脂肪族硅烷材料对无机绝缘材料形成的绝缘层2进行表面修饰处理,使得薄膜晶体管的绝缘层2的表面更加平坦,具有较小表面缺陷态或基本无表面缺陷态,从而使得薄膜晶体管具有较高迁移率和开关比的特性,改善了薄膜晶体管器件的特性,不仅制备工艺简单,而且使得该晶体管具有更高性能,相比现有的薄膜晶体管特性参数更佳。
如下的表1为目前无修饰层的薄膜晶体管与本实施例中采用了修饰层的薄膜晶体管的性能比较:
表1基于不同层结构的薄膜晶体管性能比较
层结构 | 迁移率μ(cm2/Vs) | 电流Ion/Ioff |
绝缘层 | 0.24 | 2.5×106 |
绝缘层/修饰层 | 0.52 | 9.0×106 |
从表1可见,采用了修饰层的薄膜晶体管,相对无修饰层的薄膜晶体管,具有更高的迁移率、更好的导通电流和关断电流特性,使得该薄膜晶体管具有较佳性能。
实施例2:
本实施例提供薄膜晶体管,与实施例1相比,该薄膜晶体管中栅极、源极和漏极的相对位置不同。
实施例1中薄膜晶体管为底栅型薄膜晶体管,而本实施例中的薄膜晶体管为顶栅型薄膜晶体管。在本实施例中,薄膜晶体管从下至上依次为同层设置的源极和漏极、半导体层、修饰层、绝缘层以及栅极。
本实施例中薄膜晶体管的其他层结构与实施例1中薄膜晶体管的对应层结构相同,各层的制备方法与实施例1中各层的相应的制备方法相同,这里不再详述。
本实施例中的薄膜晶体管具有较高的迁移率、更好的导通电流和关断电流特性,使得该薄膜晶体管具有较佳性能。
实施例3:
本实施例提供一种阵列基板,该阵列基板包括实施例1或实施例2中的薄膜晶体管。
在该阵列基板中,包括多个呈矩阵排列的薄膜晶体管,通过薄膜晶体管的开关控制,实现图像的显示。该阵列基板适用于液晶显示装置(Liquid Crystal Display:简称LCD)或有机电致发光显示装置(Organic Light-Emitting Diode:简称OLED)中。
由于该阵列基板中薄膜晶体管具有较高的迁移率、更好的导通电流和关断电流特性,使得该薄膜晶体管具有较佳性能,相应的使得该阵列基板具有较佳的控制效果。
实施例4:
本实施例提供一种显示装置,该显示装置包括实施例3中的阵列基板。
该显示装置可以为:液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
由于其采用的阵列基板具有较佳的控制效果,相应的使得该显示装置具有更好的显示效果。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。
Claims (10)
1.一种薄膜晶体管,所述薄膜晶体管包括栅极、源极、漏极以及设置于所述源极、所述漏极与所述栅极之间的半导体层和绝缘层,其特征在于,所述绝缘层采用无机绝缘材料形成,所述绝缘层和所述半导体层之间、且与所述绝缘层对应的区域设置有修饰层,所述修饰层采用有机脂肪族硅烷材料形成。
2.根据权利要求1所述的薄膜晶体管,其特征在于,所述绝缘层采用含有硅原子的材料形成,所述修饰层采用含有氯原子的硅烷偶联剂形成。
3.根据权利要求2所述的薄膜晶体管,其特征在于,所述绝缘层为采用二氧化硅或氮化硅形成的单层或叠层结构,所述修饰层为采用十四烷基三氯硅烷、十六烷基三氯硅烷、十八烷基三氯硅烷或二十烷基三氯硅烷形成的薄膜结构。
4.根据权利要求3所述的薄膜晶体管,其特征在于,形成所述修饰层的材料的相对介电常数的范围为2.5-3.5。
5.根据权利要求1所述的薄膜晶体管,其特征在于,所述修饰层的厚度范围为50-300nm。
6.根据权利要求1所述的薄膜晶体管,其特征在于,所述修饰层采用涂覆方式成膜。
7.根据权利要求1-6任一项所述的薄膜晶体管,其特征在于,所述薄膜晶体管从下至上依次为所述栅极、所述绝缘层、所述修饰层、所述半导体层以及同层设置的所述源极和所述漏极;
或者,所述薄膜晶体管从下至上依次为同层设置的所述源极和所述漏极、所述半导体层、所述修饰层、所述绝缘层以及所述栅极。
8.根据权利要求1-6任一项所述的薄膜晶体管,其特征在于,所述绝缘层采用等离子体增强化学气相沉积法成膜,所述半导体层采用等离子体增强化学气相沉积法成膜,所述栅极采用磁控溅射法形成,所述源极和所述漏极采用磁控溅射法沉积法成膜。
9.一种阵列基板,其特征在于,包括权利要求1-8任一项所述的薄膜晶体管。
10.一种显示装置,其特征在于,包括权利要求9所述的阵列基板。
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