CN104278243B - 磁场生成设备和溅射设备 - Google Patents

磁场生成设备和溅射设备 Download PDF

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Publication number
CN104278243B
CN104278243B CN201410319170.6A CN201410319170A CN104278243B CN 104278243 B CN104278243 B CN 104278243B CN 201410319170 A CN201410319170 A CN 201410319170A CN 104278243 B CN104278243 B CN 104278243B
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China
Prior art keywords
pole portion
magnetic pole
magnetic field
yoke
main
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CN201410319170.6A
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English (en)
Chinese (zh)
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CN104278243A (zh
Inventor
佐佐木纯
阿部淳博
平塚亮
平塚亮一
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Sony Corp
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Sony Corp
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Publication of CN104278243A publication Critical patent/CN104278243A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H01F7/0273—Magnetic circuits with PM for magnetic field generation
    • H01F7/0278—Magnetic circuits with PM for magnetic field generation for generating uniform fields, focusing, deflecting electrically charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN201410319170.6A 2013-07-11 2014-07-04 磁场生成设备和溅射设备 Active CN104278243B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-145204 2013-07-11
JP2013145204A JP2015017304A (ja) 2013-07-11 2013-07-11 磁界発生装置、及びスパッタリング装置

Publications (2)

Publication Number Publication Date
CN104278243A CN104278243A (zh) 2015-01-14
CN104278243B true CN104278243B (zh) 2018-08-14

Family

ID=52253580

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410319170.6A Active CN104278243B (zh) 2013-07-11 2014-07-04 磁场生成设备和溅射设备

Country Status (3)

Country Link
US (1) US9607813B2 (enExample)
JP (1) JP2015017304A (enExample)
CN (1) CN104278243B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11239064B2 (en) * 2018-09-27 2022-02-01 Ulvac, Inc. Magnet unit for magnetron sputtering apparatus
JP7264703B2 (ja) * 2019-04-10 2023-04-25 株式会社トヨタプロダクションエンジニアリング マグネトロンスパッタ装置の作動シミュレーション装置及び作動シミュレーション方法
US11615947B2 (en) 2020-09-01 2023-03-28 Oem Group, Llc Systems and methods for an improved magnetron electromagnetic assembly

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101445915A (zh) * 2007-11-30 2009-06-03 松下电器产业株式会社 溅射装置以及溅射方法
TW200942632A (en) * 2008-02-01 2009-10-16 Oerlikon Trading Ag Magnetron sputtering source and arrangement with adjustable secondary magnet arrangement
CN102131954A (zh) * 2008-08-29 2011-07-20 株式会社爱发科 磁控溅射阴极和成膜装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62167619A (ja) * 1985-12-24 1987-07-24 Shimadzu Corp 磁気デイスク製膜装置
US5262028A (en) * 1992-06-01 1993-11-16 Sierra Applied Sciences, Inc. Planar magnetron sputtering magnet assembly
US6306265B1 (en) * 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
JP4680353B2 (ja) * 1999-07-06 2011-05-11 アプライド マテリアルズ インコーポレイテッド スパッタリング装置および成膜方法
JP2006016634A (ja) 2004-06-30 2006-01-19 Neomax Co Ltd 磁界発生装置及びマグネトロン・スパッタ装置
JP5342240B2 (ja) * 2005-12-22 2013-11-13 テル・ソーラー・アクチェンゲゼルシャフト 少なくとも１つのスパッタコーティングされた基板を製造する方法およびスパッタソース
US8961756B2 (en) * 2006-08-04 2015-02-24 Applied Materials, Inc. Ganged scanning of multiple magnetrons, especially two level folded magnetrons
US20080296142A1 (en) * 2007-05-29 2008-12-04 Hien-Minh Huu Le Swinging magnets to improve target utilization
JP4845836B2 (ja) 2007-09-03 2011-12-28 株式会社アルバック マグネトロンスパッタカソード
US8016982B2 (en) * 2007-11-30 2011-09-13 Panasonic Corporation Sputtering apparatus and sputtering method
US8398834B2 (en) * 2010-04-02 2013-03-19 NuvoSun, Inc. Target utilization improvement for rotatable magnetrons
DE102010049329A1 (de) * 2010-10-22 2012-04-26 Forschungszentrum Jülich GmbH Sputterquellen für Hochdrucksputtern mit großen Targets und Sputterverfahren
JP5764002B2 (ja) * 2011-07-22 2015-08-12 株式会社神戸製鋼所 真空成膜装置
JP5834783B2 (ja) * 2011-10-27 2015-12-24 東京エレクトロン株式会社 マグネトロンスパッタ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101445915A (zh) * 2007-11-30 2009-06-03 松下电器产业株式会社 溅射装置以及溅射方法
TW200942632A (en) * 2008-02-01 2009-10-16 Oerlikon Trading Ag Magnetron sputtering source and arrangement with adjustable secondary magnet arrangement
CN102131954A (zh) * 2008-08-29 2011-07-20 株式会社爱发科 磁控溅射阴极和成膜装置

Also Published As

Publication number Publication date
US9607813B2 (en) 2017-03-28
US20150014158A1 (en) 2015-01-15
CN104278243A (zh) 2015-01-14
JP2015017304A (ja) 2015-01-29

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