CN104269401B - A kind of new E SD protection device based on SCR structure - Google Patents
A kind of new E SD protection device based on SCR structure Download PDFInfo
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- CN104269401B CN104269401B CN201410440343.XA CN201410440343A CN104269401B CN 104269401 B CN104269401 B CN 104269401B CN 201410440343 A CN201410440343 A CN 201410440343A CN 104269401 B CN104269401 B CN 104269401B
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Abstract
A kind of new E SD protection device based on SCR structure, can be used for ICESD protection circuits on piece.Protection device mainly by P type substrate, the first N-type trap, the first p-type trap, the second N-type trap; first N+ injection regions, a P+ injection regions, the 2nd N+ injection regions, the 3rd N+ injection regions; 2nd P+ injection regions, the 4th N+ injection regions, the 3rd P+ injection regions, the 5th N+ injection regions and some oxygen isolation areas are constituted；The type protection device is connected by certain connected mode.It is different from the serial or parallel connection of two SCR; the type protection device is under esd pulse effect; after the cut-in voltage of single modified model SCR structure is reached; inside can form two paths; wherein one is common SCR paths, and another is that modified model SCR adds forward diode path, two in the device path interaction negative feedback; improve whole device and carry out interim maintenance voltage in esd event, it is to avoid latch-up.
Description
Technical field
The invention belongs to integrated circuit electrostatic discharge (ESD-Electrostatic Discharge) protection field, is related to
A kind of new E SD protection device based on SCR structure.
Background technology
Static discharge (ESD) phenomenon is widely present in nature, it be also cause IC products failure it is important
One of reason.IC products are highly susceptible to the impact of static discharge in its manufacturing and assembling process, cause
The reliability of product is reduced, or even is damaged.Therefore, reliability height and the strong electrostatic discharge protection component of electrostatic defending performance are studied
There is considerable effect to the yield rate and reliability that improve integrated circuit with protection circuit.
According to static discharge Producing reason and its difference to integrated circuit discharge mode, static discharge be generally divided into
Lower four kinds of patterns：HBM (human-body model), MM (machine discharge mode), CDM (component charging and discharging pattern), FIM (electric fields
Inductive mode).Wherein, HBM and MM patterns be it is modal be also two kinds of static discharge patterns being concerned about the most of industrial quarters.Work as collection
When there is static discharge phenomenon into circuit, a large amount of electric charge moments flow into the pin of chip, and the electric current that these circuits are produced generally may be used
Big several amperes of sizes, the voltage produced at the pin are up to even tens volts of several volts.Larger electric current and higher voltage
The infringement of chip internal circuits and puncturing for device can be caused, so as to cause the failure of circuit function.Therefore, in order to prevent chip
It is subjected to the damage of ESD, it is necessary to which effective ESD protection will be carried out to each pin of chip.Generally, ESD protective device
Design need consider two aspects problem：One is that ESD protective device wants high current of can releasing；Two is ESD protective device
Will can chip be subject to ESD impact when by chip pin terminal voltage clamper safety low voltage level.
The device for being typically used as ESD protections has diode, GGNMOS (NMOS of grid ground connection), SCR (controllable silicon) etc..But
It is, in some special circuits and special applications, to need the breakdown voltage of ESD protective device higher, current drain ability is stronger,
Also need to simultaneously improve the maintenance voltage of ESD device, it is to avoid latch-up.The invention provides a kind of new technical scheme, can
To provide the ESD device of high maintenance voltage, it is to avoid the generation of latch-up.
The content of the invention
It is an object of the invention to provide a kind of new E SD protection device based on SCR structure, solves existing ESD
Device receives larger electric current and higher voltage cause the infringement of chip internal circuits and the problem of device breakdown.
The technical solution adopted in the present invention is a kind of new E SD protection device based on SCR structure, it is characterised in that
Including P type substrate, the first N-type trap, the first p-type trap and the second N-type trap in P type substrate, are provided with, the first p-type trap is located at the first N-type
Between trap and the second N-type trap；
A N+ injection regions, a P+ injection regions are marked with first N-type trap；
The 3rd N+ injection regions, the 2nd P+ injection regions and the 4th N+ injection regions are marked with first p-type trap；
The 3rd P+ injection regions and the 5th N+ injection regions are marked with second N-type trap；
Bridging between first N-type trap and the first p-type trap has the 2nd N+ injection regions；
Between first N+ injection regions and P type substrate edge, between a N+ injection regions and a P+ injection regions, a P+ note
Enter between area and the 2nd N+ injection regions, between the 2nd N+ injection regions and the 3rd N+ injection regions, the 3rd N+ injection regions and the 2nd P+ are noted
Enter between area, between the 2nd P+ injection regions and the 4th N+ injection regions, between the 4th N+ injection regions and the 3rd P+ injection regions, the 3rd P+
It is separated by by oxidization isolation layer between injection region and the 5th N+ injection regions, between the 5th N+ injection regions and P type substrate edge；
3rd N+ injection regions, the 2nd P+ injection regions and the 4th N+ injection regions draw a device interface jointly, used as device
Negative electrode；
A port is drawn in 3rd P+ injection regions, used as device anode；
First N+ injection regions, between a P+ injection regions and the 5th N+ injection regions using metal wire be connected.
Further, there is positive esd event on the anode interim, just formed by the 3rd P+ injection regions and the second N-type trap
To conducting diode, with a N+ injection regions, the first N-type trap, a P+ injection regions, the 2nd N+ injection regions, the 3rd N+ injection regions,
The modified model SCR that second p-type trap and the 2nd P+ injection regions are formed guiding paths to be formed of connecting are opened, meanwhile, by the 3rd P+
The conventional scr structure that injection region, the second N-type trap, the 4th N+ injection regions, the first p-type trap and the 2nd P+ injection regions are formed is opened,
And form drain passageway.
Further, by the low trigger voltage of modified model SCR opening device architecture, simultaneously as the 3rd P+ injection regions
With the positive PN junction conducting of the second N-type trap, conventional scr path can be promoted to turn on, so as to modified model SCR paths are led to conventional scr
Road forms negative feedback, reaches the purpose of increase device maintenance voltage, while the trigger voltage of device is only by modified model SCR paths
Cut-in voltage is determined.
The invention has the beneficial effects as follows protection ESD device will not be by larger electric current and higher voltage damages.
Description of the drawings
Fig. 1 is the conventional scr structural profile schematic diagram that present example is utilized；
Fig. 2 is the modified model SCR structure generalized section that present example is utilized；
Fig. 3 is the conventional connected mode schematic diagram in present example using two kinds of structures；
Fig. 4 is the connected mode schematic diagram in present example after synthesis.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawings and detailed description.
For technological deficiency present on prior art, present example devises a kind of new E SD based on SCR structure
Protection device, the characteristics of both made full use of SCR structure strong discharge capacity, make use of the advantage of modified model SCR low trigger voltages again,
Mode is connected with each other by changing conventional scr and modified model SCR, the characteristics of maintain modified model SCR structure low trigger voltage, and
The generation negative feedback between the two for making, improves maintenance voltage, can avoid the generation of latch-up.High pressure resistant, height can be realized
The ESD protective values such as maintenance voltage, low on-resistance, low trigger voltage, strong robustness.Can be used to improve IC bi-directional ESDs on piece
The reliability of protection.
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description：
Present example devises a kind of new E SD protection device based on SCR structure, by changing conventional scr structure
And the connected mode between modified model SCR structure, in the case where extra mask version is not increased, not only realize keeping modified model
The characteristics of SCR structure trigger voltage, and the negative feedback between conventional scr structure and modified model SCR structure can be utilized, so as to
Improve the maintenance voltage of the type device.
The conventional scr structural profile schematic diagram that the present invention as shown in Figure 1 is utilized, its feature include：Mainly there is P type substrate
(101), a p-type trap (102), a N-type trap (103) have a P+ injection region (104), a N+ injection region on p-type trap
(105) and some oxide isolation regions, ((106), a N+ injection region (107) is and if dry oxidation a P+ injection region in N-type trap
Isolation area.
The modified model SCR structure generalized section that present example as shown in Figure 2 is utilized, its feature include：Mainly there is P
Type substrate (201), a p-type trap (202), a N-type trap (203) have a P+ injection region (204), a N+ note on p-type trap
Enter area (205) and some oxide isolation regions, in N-type trap, have a P+ injection region (207), a N+ injection region (208) and some
Oxide isolation regions, a N+ injection region (206) is across on p-type trap and N-type trap.
The conventional connected mode schematic diagram of two kinds of structures, the P of modified model SCR are utilized in present example as shown in Figure 3
P+ injection regions (204) and N+ injection regions (205) on well region (202) draws a device interface Cathode, N well regions jointly
(203) N+ injection regions (107) phase on the P+ injection regions (207) on, N+ injection regions (208) and N well regions (103) in conventional scr
Even, a device interface Anode, the N+ on p-well region (102) are drawn in the P+ injection regions (106) on the N well regions (103) of conventional scr
Injection region (105), P+ injection regions (104) draw a device interface Cathode jointly.Come when there are the positive ESD times on Anode
Face, when Cathode ends are grounded, the forward diode being made up of P+ injection regions (106) and N well regions (103) and modified model SCR device
The cascaded structure conducting of formation, while the conducting of conventional scr structure, due to having used same P+ injection regions, conventional scr device and
Modified model SCR device can form a negative feedback, reduce injection efficiency, improve the maintenance voltage of device.
Connected mode schematic diagram in present example as shown in Figure 4 after synthesis, when Anode terminations ESD arteries and veins described in device
The high potential of punching, when Cathode ends are grounded, P type substrate (301), be provided with P type substrate (301) the first N-type trap (302), first
P-type trap (303) and the second N-type trap (304), the 3rd P+ injection regions (311), two pole of forward direction that the second N-type trap (304) is formed
Pipe with by a N+ injection regions (305), the first N-type trap (302), a P+ injection regions (306), the 2nd N+ injection regions (307), the
One p-type trap (303), the modified model SCR that the 3rd N+ injection regions (308) and the 2nd P+ injection regions (309) are formed are in series
Leakage paths are turned on, meanwhile, by the 5th N+ injection regions (312), the second N-type trap (304), the 3rd P+ injection regions (311), a P
Type trap (303), the SCR drain passageways conducting that the 4th N+ injection regions (310) and the 2nd P+ injection regions (309) are formed, two are led
Road mutually forms negative feedback all, reduces current injection efficiency, improves the maintenance voltage of device, it is to avoid latch-up occurs.
The present invention Advantageous Effects be：
(1) CMOS technology that SCR structure of the invention is commonly used with industry realizes process compatible, protects with very strong ESD
Ability；
(2) present invention need not additionally increase mask plate, therefore need not increase technique cost of manufacture；
(3) present invention is by certain connected mode, the characteristics of both maintained modified model SCR structure low trigger voltage, and
Using the negative feedback between modified model SCR structure and conventional scr structure, the overall maintenance voltage of device is improved, it is to avoid breech lock is imitated
The generation answered.
Finally illustrate, above example is only unrestricted to illustrate technical scheme, although with reference to preferably
Example has been described in detail to the present invention, it will be understood by those within the art that, can be to the technical side of the present invention
Case is modified or equivalent, and without deviating from the objective and scope of technical solution of the present invention, which all should be covered in the present invention
Right in the middle of.
The above is only, to presently preferred embodiments of the present invention, not to make any pro forma restriction to the present invention,
Every technical spirit according to the present invention is belonged to any simple modification made for any of the above embodiments, equivalent variations and modification
In the range of technical solution of the present invention.
Claims (3)
1. a kind of new E SD protection device based on SCR structure, it is characterised in that including P type substrate (301), the p-type lining
It is provided with the first N-type trap (302) in bottom, the first p-type trap (303), the second N-type trap (304), the first p-type trap (303) is positioned at a N
Between type trap (302) and the second N-type trap (304)；
A N+ injection regions (305), a P+ injection regions (306) are marked with first N-type trap (302)；
The 3rd N+ injection regions (308), the 2nd P+ injection regions (309) and the 4th N+ injection regions are marked with first p-type trap (303)
(310)；
The 3rd P+ injection regions (311) and the 5th N+ injection regions (312) are marked with second N-type trap (304)；
Bridging between first N-type trap (302) and the first p-type trap (303) has the 2nd N+ injection regions (307)；
Between first N+ injection regions (305) and P type substrate (301) edge, a N+ injection regions (305) and a P+ injection regions
(306) between, between a P+ injection regions (306) and the 2nd N+ injection regions (307), the 2nd N+ injection regions (307) and the 3rd N+
Between injection region (308), between the 3rd N+ injection regions (308) and the 2nd P+ injection regions (309), the 2nd P+ injection regions (309) and
Between 4th N+ injection regions (310), between the 4th N+ injection regions (310) and the 3rd P+ injection regions (311), the 3rd P+ injection regions
(311) and the 5th N+ injection regions (312) between, between the 5th N+ injection regions (312) and P type substrate (301) edge by oxidation
Sealing coat is separated by；
3rd N+ injection regions (308), the 2nd P+ injection regions (309) and the 4th N+ injection regions (310) draw a device end jointly
Mouthful, as device cathodes；
A port is drawn in 3rd P+ injection regions (311), used as device anode；
First N+ injection regions (305), between a P+ injection regions (306) and the 5th N+ injection regions (312) using metal wire be connected.
2. as claimed in claim 1 a kind of new E SD protection device based on SCR structure, it is characterised in that：Have on the anode
Positive esd event comes interim, forms forward conduction diode by the 3rd P+ injection regions (311) and the second N-type trap (304), with the
One N+ injection regions (305), the first N-type trap (302), a P+ injection regions (306), the 2nd N+ injection regions (307), the 3rd N+ injections
The modified model SCR that area (308), the second p-type trap (303) and the 2nd P+ injection regions (309) are formed connects the guiding path to be formed
Open, meanwhile, by the 3rd P+ injection regions (311), the second N-type trap (304), the 4th N+ injection regions (310), the first p-type trap (303)
And the 2nd the conventional scr structure that formed of P+ injection regions (309) open, and form drain passageway.
3. as claimed in claim 2 a kind of new E SD protection device based on SCR structure, it is characterised in that：By modified model
The low trigger voltage of SCR is opening device architecture, simultaneously as the 3rd P+ injection regions (311) are with the second N-type trap (304) just
Turn on to PN junction, conventional scr path can be promoted to turn on, so as to modified model SCR paths form negative feedback with conventional scr path, reached
To the purpose of increase device maintenance voltage, while the trigger voltage of device is only determined by the cut-in voltage of modified model SCR paths.
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| JP6570750B2 (en) * | 2016-07-12 | 2019-09-04 | 三菱電機株式会社 | Infrared detector and method for manufacturing infrared detector |
| CN109065537B (en) * | 2018-08-24 | 2021-01-08 | 电子科技大学 | High-maintenance-current SCR device for ESD protection |
| CN113471193B (en) * | 2021-06-28 | 2024-07-09 | 深圳砺芯半导体有限责任公司 | Anti-latch-up composite device for ESD protection of positive and negative power supplies |
| CN116646353B (en) * | 2023-07-26 | 2024-01-02 | 深圳中安辰鸿技术有限公司 | Diode ESD protection device, integrated circuit and electronic equipment |
| CN117790500B (en) * | 2024-02-19 | 2024-05-10 | 成都芯翼科技有限公司 | Electrostatic discharge protection structure for M-LVDS port |
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