CN101257005A - Silicium control rectifier protecting electro-static discharge - Google Patents
Silicium control rectifier protecting electro-static discharge Download PDFInfo
- Publication number
- CN101257005A CN101257005A CNA2007100795780A CN200710079578A CN101257005A CN 101257005 A CN101257005 A CN 101257005A CN A2007100795780 A CNA2007100795780 A CN A2007100795780A CN 200710079578 A CN200710079578 A CN 200710079578A CN 101257005 A CN101257005 A CN 101257005A
- Authority
- CN
- China
- Prior art keywords
- zone
- mentioned
- negative electrode
- scr
- additional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Thyristors (AREA)
Abstract
The present invention provides a SCR for protecting electrostatic discharge, which includes a substrate; at least a N well and/or at least a P well installed above the substrate; the first N +region and the first P +region containing at least a contacts respectively forming at the bottom of N well or N molding lining as the anodic of SCR; the second N + region and the second P+region containing at least a contact respectively forming at the bottom of P well or P molding lining as cathode of SCR; the first P +region situated at the middle part of the SCR fundamentally, the shapes of the first N +region, the second N +region and the second P +region are switching-off annular or hollow polygon in sequence from inside to outside, wherein the first P +region is placed at the hollow part of the first N +region, the first N +region is placed at the hollow part of the second N +region, the second N +region is placed at the hollow part of the second P +region. The present invention saves area more effectively, provides more current passage of ESD, makes the trigger voltage more uniform, and improves the protective ability of ESD.
Description
Technical field
The present invention relates to a kind of semiconductor element, particularly a kind of thyristor (Silicon Controlled Rectifier is hereinafter to be referred as SCR) of protecting static discharge.
Background technology
Along with the advanced person day by day of semiconductor technology processing procedure, the protection of static discharge (electrostatic discharge is hereinafter to be referred as ESD) more and more is subjected to people's attention.In numerous protective devices, SCR is because its lower voltage (holding voltage) of keeping makes that under area identical, the ESD protective capacities is stronger, more effective.But, have to select other ESD protective device because the higher trigger voltage of SCR makes most of designers hang back.In order to improve the higher trigger voltage of SCR (trigger voltage), very many SCR structures through improving have been arranged at present, the horizontal thyristor of picture (lateral SCR, hereinafter to be referred as LSCR), the thyristor of low trigger voltage (low voltagetriggering SCR, hereinafter to be referred as LVTSCR), horizontal thyristor of improvement (modifiedlateral SCR is hereinafter to be referred as MLSCR) or the like.These up-to-date structures of picture, can reduce the trigger voltage of SCR to a certain extent, even can by on some manufacturing process and the improvement of SCR structure itself make its trigger voltage be reduced to any desirable value, can be the United States Patent (USP) of US7154152 referring to the patent No..(for example 0.13um, 90nm etc.) provides very effective protection to Electrostatic Discharge in these improved SCR structures advanced process afterwards.
Traditional SCR, as LSCR, MLSCR, LVTSCR or the like, mainly be to adopt list structure, as Fig. 1-shown in Figure 4, though in various degree reduction is arranged for its trigger voltage of different structures as the ESD protective device, but still might exist SCR to trigger uneven phenomenon, and its ESD protective capacities is limited.
Summary of the invention
Because the above-mentioned defective of prior art, it is stronger to press for a kind of ESD protective capacities at present, the more uniform SCR of trigger voltage.Purpose of the present invention just is to provide a kind of SCR of such protection static discharge.
In view of above-mentioned purpose, the invention provides a kind of SCR that protects static discharge, comprise substrate; At least one N trap and/or at least one P trap are located at the top of above-mentioned substrate; Contain the N+ zone and a P+ zone of at least one contact respectively, be formed at above-mentioned N trap or N type substrate, as the anode of above-mentioned SCR; Contain the 2nd N+ zone and the 2nd P+ zone of at least one contact respectively, be formed at above-mentioned P trap or P type substrate, as the negative electrode of above-mentioned SCR; An above-mentioned P+ zone is positioned at the basic medium position of above-mentioned SCR, the polygon that is shaped as tactic successively from inside to outside closed hoop or hollow in an above-mentioned N+ zone, above-mentioned the 2nd N+ zone and above-mentioned the 2nd P+ zone, wherein, an above-mentioned P+ zone is positioned at the hollow bulb in an above-mentioned N+ zone, the one N+ zone is positioned at the hollow bulb in above-mentioned the 2nd N+ zone, and above-mentioned the 2nd N+ zone is positioned at the hollow bulb in above-mentioned the 2nd P+ zone.
Above-mentioned SCR can also comprise tactic successively from inside to outside polygonal additional the 2nd N+ zone that is closed hoop or hollow, the 3rd N+ zone, the 3rd P+ zone, additional the 3rd N+ zone, the 4th N+ zone and the 4th P+ zone, above-mentioned zone all contains at least one contact, wherein, additional the 2nd N+ zone is positioned at the outside, above-mentioned the 2nd P+ zone, with the common negative electrode that constitutes above-mentioned SCR in the 2nd P+ zone and the 2nd N+ zone, the 3rd N+ zone, the 3rd P+ zone and additional the 3rd N+ zone are as another anode of above-mentioned SCR, and the 4th N+ zone and the 4th P+ zone are as another negative electrode of above-mentioned SCR.
Can also comprise a N+ zone between above-mentioned N+ zone that is used for anode and the N+ zone that is used for negative electrode as the trigger point.
Above-mentioned SCR can also comprise tactic successively from inside to outside polygonal additional the 2nd N+ zone that is closed hoop or hollow, the 3rd N+ zone, the 3rd P+ zone, additional the 3rd N+ zone, the 4th N+ zone and the 4th P+ zone, above-mentioned zone all contains at least one contact, wherein, additional the 2nd N+ zone is positioned at the outside, above-mentioned the 2nd P+ zone, with the common negative electrode that constitutes above-mentioned SCR in the 2nd P+ zone and the 2nd N+ zone, the 3rd N+ zone, the 3rd P+ zone and additional the 3rd N+ zone are as another anode of above-mentioned SCR, and the 4th N+ zone and the 4th P+ zone are as another negative electrode of above-mentioned SCR.
Above-mentioned SCR is used for the N+ zone of anode and is used for also comprising another N+ zone as anode between the N+ zone of negative electrode, and its below also comprises a P-zone.Above-mentioned SCR can also comprise tactic successively from inside to outside polygonal additional the 2nd N+ zone that is closed hoop or hollow, the 3rd N+ zone, the 3rd P+ zone, additional the 3rd N+ zone, the 4th N+ zone and the 4th P+ zone, above-mentioned zone all contains at least one contact, wherein, additional the 2nd N+ zone is positioned at the outside, above-mentioned the 2nd P+ zone, with the common negative electrode that constitutes above-mentioned thyristor in the 2nd P+ zone and the 2nd N+ zone, the 3rd N+ zone, the 3rd P+ zone and additional the 3rd N+ zone are as another anode of above-mentioned thyristor, and the 4th N+ zone and the 4th P+ zone are as another negative electrode of above-mentioned thyristor.
Beneficial effect of the present invention is, adopt polygon or the circular SCR of formation discharge loop, new SCR structure is equivalent to a plurality of SCR parallel connections, can more effective saving area, the ESD current path more is provided, make trigger voltage more even, improve the ESD protective capacities, thereby make semiconductor element can extensively must be applied to aviation, field such as military.
Description of drawings
Figure 1A and Figure 1B are the structure charts of LSCR in the prior art.
Fig. 2 A and Fig. 2 B are the structure charts of MLSCR in the prior art.
Fig. 3 A and Fig. 3 B are the structure charts of another kind of MLSCR in the prior art.
Fig. 4 A and Fig. 4 B are the structure charts of LVTSCR in the prior art.
Fig. 5 A, Fig. 5 B and Fig. 5 C are the structure charts of the LSCR of a preferred embodiment of the present invention, and wherein Fig. 5 A is a sectional view, the front view when front view when Fig. 5 B is polygon for each zone, Fig. 5 C are annular for each zone.
Fig. 6 A, Fig. 6 B and Fig. 6 C are the structure charts of the MLSCR of a preferred embodiment of the present invention, and wherein Fig. 6 A is a sectional view, the front view when front view when Fig. 6 B is polygon for each zone, Fig. 6 C are annular for each zone.
Fig. 7 A, Fig. 7 B and Fig. 7 C are the structure charts of the MLSCR of another preferred embodiment of the present invention, and wherein Fig. 7 A is a sectional view, the front view when front view when Fig. 7 B is polygon for each zone, Fig. 7 C are annular for each zone.
Fig. 8 A, Fig. 8 B and Fig. 8 C are the structure charts of the LVTSCR of a preferred embodiment of the present invention, and wherein Fig. 8 A is a sectional view, the front view when front view when Fig. 8 B is polygon for each zone, Fig. 8 C are annular for each zone.
Embodiment
Now in conjunction with the accompanying drawings better embodiment of the present invention is elaborated, adopt N trap and P trap in an embodiment of the present invention, substrate can adopt P substrate or other, in some technology, though simple N trap (P substrate) is just arranged, perhaps simple P trap (N substrate), the present invention still can use, as long as the part of N trap is changed in the N substrate, or the part of P trap changed in the P substrate got final product.
The structure of the LSCR of a preferred embodiment of the present invention is shown in Fig. 5 A, Fig. 5 B and Fig. 5 C, in above-mentioned LSCR, a substrate 51 is arranged at the bottom, there are N trap 52 and P trap 53 in above-mentioned substrate top, there is the anode 54 of the SCR that is formed by N+ zone and a P+ zone top of above-mentioned N trap 52, there is the negative electrode 55 of the SCR that is formed by the 2nd N+ zone and the 2nd P+ zone the top of above-mentioned P trap 53, and above-mentioned anode 54 is positioned at the middle body of above-mentioned substrate 51, and above-mentioned negative electrode 55 is contained in above-mentioned anode 54 wherein.The shape of above-mentioned anode 54 and above-mentioned negative electrode 55 can be respectively sub-circular and the approximate circle annular shown in Fig. 5 B, or the ring-type polygon of polygon shown in Fig. 5 C and hollow, certainly, the one N+ zone 542, the shape in the 551 and the 2nd P+ zone 552, the 2nd N+ zone also is the tactic successively from inside to outside approximate circle annular shown in Fig. 5 B, or the ring-type polygon of the hollow shown in Fig. 5 C, an above-mentioned P+ zone is positioned at the hollow bulb in an above-mentioned N+ zone, the one N+ zone is positioned at the hollow bulb in above-mentioned the 2nd N+ zone, and above-mentioned the 2nd N+ zone is positioned at the hollow bulb in above-mentioned the 2nd P+ zone.SCR can be only by constituting with top, also can comprise negative electrode and anode by similar structures, tactic successively from inside to outside polygonal additional the 2nd N+ zone that is closed hoop or hollow, the 3rd N+ zone, the 3rd P+ zone, additional the 3rd N+ zone, the 4th N+ zone and the 4th P+ zone, above-mentioned zone all contains to a plurality of contacts, wherein, additional the 2nd N+ zone is positioned at the outside, above-mentioned the 2nd P+ zone, with the common negative electrode that constitutes above-mentioned SCR in the 2nd P+ zone and the 2nd N+ zone, the 3rd N+ zone, the 3rd P+ zone and additional the 3rd N+ zone are as another anode of above-mentioned SCR, and the 4th N+ zone and the 4th P+ zone are as another negative electrode of above-mentioned SCR.Certainly can also be by the 3rd group of anode and negative electrode, the 4th group of anode and negative electrode, present embodiment includes but not limited to the number to said structure.
The structure of the MLSCR of a preferred embodiment of the present invention is shown in Fig. 6 A, Fig. 6 B and Fig. 6 C, in above-mentioned MLSCR, a substrate 61 is arranged at the bottom, there are N trap 62 and P trap 63 in above-mentioned substrate top, there is the anode 64 of the SCR that is formed by N+ zone and a P+ zone top of above-mentioned N trap 62, there is the negative electrode 65 of the SCR that is formed by the 2nd N+ zone and the 2nd P+ zone the top of above-mentioned P trap 63, and above-mentioned anode 64 is positioned at the middle body of above-mentioned substrate 61, and above-mentioned negative electrode 65 is contained in above-mentioned anode 64 wherein.The shape of above-mentioned anode 64 and above-mentioned negative electrode 65 can be respectively sub-circular and the approximate circle annular shown in Fig. 6 B, or the ring-type polygon of polygon shown in Fig. 6 C and hollow, certainly, the one N+ zone, the shape in the 2nd N+ zone and the 2nd P+ zone also is the tactic successively from inside to outside approximate circle annular shown in Fig. 6 B, or the ring-type polygon of the hollow shown in Fig. 6 C, an above-mentioned P+ zone is positioned at the hollow bulb in an above-mentioned N+ zone, the one N+ zone is positioned at the hollow bulb in above-mentioned the 2nd N+ zone, above-mentioned the 2nd N+ zone is positioned at the hollow bulb in above-mentioned the 2nd P+ zone, is used for the N+ zone of anode 64 and is used for also comprising a N+ zone as the trigger point between the N+ zone 65 of negative electrode.SCR can be only by constituting with top, also can comprise negative electrode and anode by similar structures, for example tactic successively from inside to outside polygonal additional the 2nd N+ zone, the 3rd N+ zone, the 3rd P+ zone, additional the 3rd N+ zone, the 4th N+ zone and the 4th P+ zone that is closed hoop or hollow, above-mentioned zone all contains a plurality of contacts, wherein, the 3rd N+ zone, the 3rd P+ zone and additional the 3rd N+ zone are as another anode of above-mentioned SCR, and the 4th N+ zone and the 4th P+ zone are as another negative electrode of above-mentioned SCR.Certainly can also be by the 3rd group of anode and negative electrode, the 4th group of anode and negative electrode, present embodiment includes but not limited to the number to said structure.
The structure of the MLSCR of another preferred embodiment of the present invention is shown in Fig. 7 A, Fig. 7 B and Fig. 7 C, in above-mentioned MLSCR, a substrate 71 is arranged at the bottom, there are N trap 72 and P trap 73 in above-mentioned substrate top, there is the anode 74 of the SCR that is formed by N+ zone and a P+ zone top of above-mentioned N trap 72, there is the negative electrode 75 of the SCR that is formed by the 2nd N+ zone and the 2nd P+ zone the top of above-mentioned P trap 73, above-mentioned anode 74 is positioned at the middle body of above-mentioned substrate 71, and above-mentioned negative electrode 75 is contained in above-mentioned anode 74 wherein.The shape of above-mentioned anode 74 and above-mentioned negative electrode 75 can be respectively sub-circular and the approximate circle annular shown in Fig. 7 B, or the ring-type polygon of the hollow shown in Fig. 7 C, an above-mentioned P+ zone is positioned at the hollow bulb in an above-mentioned N+ zone, the one N+ zone is positioned at the hollow bulb in above-mentioned the 2nd N+ zone, above-mentioned the 2nd N+ zone is positioned at the hollow bulb in above-mentioned the 2nd P+ zone, be used for the N+ zone of anode 74 and be used for also comprising another N+ zone between the N+ zone 75 of negative electrode, and its below also comprises a P-zone as anode 74.SCR can be only by constituting with top, also can comprise negative electrode and anode by similar structures, for example tactic successively from inside to outside polygonal additional the 2nd N+ zone, the 3rd N+ zone, the 3rd P+ zone, additional the 3rd N+ zone, the 4th N+ zone and the 4th P+ zone that is closed hoop or hollow, above-mentioned zone all contains a plurality of contacts, wherein, the 3rd N+ zone, the 3rd P+ zone and additional the 3rd N+ zone are as another anode of above-mentioned SCR, and the 4th N+ zone and the 4th P+ zone are as another negative electrode of above-mentioned SCR.Certainly can also be by the 3rd group of anode and negative electrode, the 4th group of anode and negative electrode, present embodiment includes but not limited to the number to said structure.
The structure of the LVTSCR of a preferred embodiment of the present invention is shown in Fig. 8 A, Fig. 8 B and Fig. 8 C, in above-mentioned LVTSCR, a substrate 81 is arranged at the bottom, there are N trap 82 and P trap 83 in above-mentioned substrate top, there is the anode 84 of the SCR that is formed by N+ zone and a P+ zone top of above-mentioned N trap 82, there is the negative electrode 85 of the SCR that is formed by the 2nd N+ zone and the 2nd P+ zone the top of above-mentioned P trap 83, above-mentioned anode 84 is positioned at the middle body of above-mentioned substrate 81, and above-mentioned negative electrode 85 is contained in above-mentioned anode 84 wherein.The shape of above-mentioned anode 84 and above-mentioned negative electrode 85 can be respectively sub-circular and the approximate circle annular shown in Fig. 8 B, or the ring-type polygon of the hollow shown in Fig. 8 C, certainly, the one N+ zone, the shape in the 2nd N+ zone and the 2nd P+ zone also is the tactic successively from inside to outside approximate circle annular shown in Fig. 8 B, or the ring-type polygon of the hollow shown in Fig. 8 C, an above-mentioned P+ zone 841 is positioned at the hollow bulb in an above-mentioned N+ zone 842, the one N+ zone is positioned at the hollow bulb in above-mentioned the 2nd N+ zone, above-mentioned the 2nd N+ zone is positioned at the hollow bulb in above-mentioned the 2nd P+ zone, is used for the N+ zone of anode 84 and is used for also comprising between the N+ zone of negative electrode 85 the polygonal Poly toggle area of ring-type of an approximate circle annular or hollow.SCR can be only by constituting with top, also can comprise negative electrode and anode by similar structures, for example tactic successively from inside to outside polygonal additional the 2nd N+ zone that is closed hoop or hollow, the 3rd N+ zone, the 3rd P+ zone, additional the 3rd N+ zone, the 4th N+ zone and the 4th P+ zone, above-mentioned zone all contains a plurality of contacts, wherein, the 3rd N+ zone, the 3rd P+ zone and additional the 3rd N+ zone are as another anode of above-mentioned SCR, the 4th N+ zone and the 4th P+ zone are as another negative electrode of above-mentioned SCR, above-mentioned N+ zone as the trigger point, for example the additional N+ zone of the N+ zone negative electrode adjacent with it also has the contact similar to above-mentioned cathode shape to encircle 881 between for example above-mentioned additional the 3rd N+ zone.Certainly can also be by the 3rd group of anode and negative electrode, the 4th group of anode and negative electrode, present embodiment includes but not limited to the number to said structure.
The above only is preferred embodiment of the present invention; be not so limit scope of patent protection of the present invention; so the so-called equivalent structure of all utilizations specification of the present invention and diagramatic content changes, or directly or indirectly apply in the scope that other correlative technology fields all in like manner all are contained in the present invention and are contained.
Claims (6)
1. a thyristor of protecting static discharge comprises
Substrate;
At least one N trap and/or at least one P trap are located at the top of above-mentioned substrate;
Contain the N+ zone and a P+ zone of at least one contact respectively, be formed at above-mentioned N trap or N type substrate, as the anode of above-mentioned thyristor;
Contain the 2nd N+ zone and the 2nd P+ zone of at least one contact respectively, be formed at above-mentioned P trap or P type substrate, as the negative electrode of above-mentioned thyristor;
It is characterized in that, an above-mentioned P+ zone is positioned at the basic medium position of above-mentioned thyristor, the polygon that is shaped as tactic successively from inside to outside closed hoop or hollow in an above-mentioned N+ zone, above-mentioned the 2nd N+ zone and above-mentioned the 2nd P+ zone, wherein, an above-mentioned P+ zone is positioned at the hollow bulb in an above-mentioned N+ zone, the one N+ zone is positioned at the hollow bulb in above-mentioned the 2nd N+ zone, and above-mentioned the 2nd N+ zone is positioned at the hollow bulb in above-mentioned the 2nd P+ zone.
2. thyristor according to claim 1 is characterized in that also comprising
Tactic successively from inside to outside polygonal additional the 2nd N+ zone, the 3rd N+ zone, the 3rd P+ zone, additional the 3rd N+ zone, the 4th N+ zone and the 4th P+ zone that is closed hoop or hollow, above-mentioned zone all contains at least one contact,
Wherein, additional the 2nd N+ zone is positioned at the outside, above-mentioned the 2nd P+ zone, with the common negative electrode that constitutes above-mentioned thyristor in the 2nd P+ zone and the 2nd N+ zone,
The 3rd N+ zone, the 3rd P+ zone and additional the 3rd N+ zone are used as another anode of above-mentioned thyristor,
The 4th N+ zone and the 4th P+ zone are as another negative electrode of above-mentioned thyristor.
3. thyristor according to claim 1 also comprises a N+ zone as the trigger point between the N+ zone that it is characterized in that the above-mentioned N+ zone that is used for anode and be used for negative electrode.
4. thyristor according to claim 3 is characterized in that also comprising
Tactic successively from inside to outside polygonal additional the 2nd N+ zone, the 3rd N+ zone, the 3rd P+ zone, additional the 3rd N+ zone, the 4th N+ zone and the 4th P+ zone that is closed hoop or hollow, above-mentioned zone all contains at least one contact,
Wherein, additional the 2nd N+ zone is positioned at the outside, above-mentioned the 2nd P+ zone, with the common negative electrode that constitutes above-mentioned thyristor in the 2nd P+ zone and the 2nd N+ zone,
The 3rd N+ zone, the 3rd P+ zone and additional the 3rd N+ zone are used as another anode of above-mentioned thyristor,
The 4th N+ zone and the 4th P+ zone are as another negative electrode of above-mentioned thyristor.
5. thyristor according to claim 1 also comprise another N+ zone as anode between the N+ zone that it is characterized in that the above-mentioned N+ zone that is used for anode and be used for negative electrode, and its below also comprises a P-zone.
6. thyristor according to claim 5 is characterized in that also comprising
Tactic successively from inside to outside polygonal additional the 2nd N+ zone, the 3rd N+ zone, the 3rd P+ zone, additional the 3rd N+ zone, the 4th N+ zone and the 4th P+ zone that is closed hoop or hollow, above-mentioned zone all contains at least one contact, wherein, additional the 2nd N+ zone is positioned at the outside, above-mentioned the 2nd P+ zone, with the common negative electrode that constitutes above-mentioned thyristor in the 2nd P+ zone and the 2nd N+ zone
The 3rd N+ zone, the 3rd P+ zone and additional the 3rd N+ zone are used as another anode of above-mentioned thyristor,
The 4th N+ zone and the 4th P+ zone are as another negative electrode of above-mentioned thyristor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100795780A CN100550368C (en) | 2007-03-01 | 2007-03-01 | A kind of thyristor of protecting static discharge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100795780A CN100550368C (en) | 2007-03-01 | 2007-03-01 | A kind of thyristor of protecting static discharge |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101257005A true CN101257005A (en) | 2008-09-03 |
| CN100550368C CN100550368C (en) | 2009-10-14 |
Family
ID=39891635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2007100795780A Active CN100550368C (en) | 2007-03-01 | 2007-03-01 | A kind of thyristor of protecting static discharge |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100550368C (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034811A (en) * | 2010-09-21 | 2011-04-27 | 电子科技大学 | Low-voltage SCR (Silicon Controlled Rectifier) structure for ESD (Electronic Static Discharge) protection of integrated circuit chip |
| WO2012066037A1 (en) | 2010-11-19 | 2012-05-24 | Austriamicrosystems Ag | Thyristor component |
| CN104269401A (en) * | 2014-08-30 | 2015-01-07 | 电子科技大学 | Novel ESD protection device based on SCR structure |
| CN108735733A (en) * | 2018-05-30 | 2018-11-02 | 湖南大学 | Silicon-controlled electrostatic protection device |
| CN112103286A (en) * | 2020-11-10 | 2020-12-18 | 微龛(广州)半导体有限公司 | Trigger voltage adjustable bidirectional ESD protection device and preparation method thereof |
| CN113675189A (en) * | 2021-10-22 | 2021-11-19 | 武汉市聚芯微电子有限责任公司 | Electrostatic protection device and chip |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600104B (en) * | 2014-12-12 | 2018-04-27 | 上海贝岭股份有限公司 | Height keeps voltage SCR structure |
-
2007
- 2007-03-01 CN CNB2007100795780A patent/CN100550368C/en active Active
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102034811A (en) * | 2010-09-21 | 2011-04-27 | 电子科技大学 | Low-voltage SCR (Silicon Controlled Rectifier) structure for ESD (Electronic Static Discharge) protection of integrated circuit chip |
| CN102034811B (en) * | 2010-09-21 | 2012-07-04 | 电子科技大学 | Low-voltage SCR (Silicon Controlled Rectifier) structure for ESD (Electronic Static Discharge) protection of integrated circuit chip |
| WO2012066037A1 (en) | 2010-11-19 | 2012-05-24 | Austriamicrosystems Ag | Thyristor component |
| DE102010051961A1 (en) | 2010-11-19 | 2012-05-24 | Austriamicrosystems Ag | Thyristorbauelement |
| US8796732B2 (en) | 2010-11-19 | 2014-08-05 | Ams Ag | Thyristor component |
| CN104269401A (en) * | 2014-08-30 | 2015-01-07 | 电子科技大学 | Novel ESD protection device based on SCR structure |
| CN104269401B (en) * | 2014-08-30 | 2017-03-29 | 电子科技大学 | A kind of new E SD protection device based on SCR structure |
| CN108735733A (en) * | 2018-05-30 | 2018-11-02 | 湖南大学 | Silicon-controlled electrostatic protection device |
| CN108735733B (en) * | 2018-05-30 | 2021-04-13 | 湖南大学 | Silicon controlled electrostatic protector |
| CN112103286A (en) * | 2020-11-10 | 2020-12-18 | 微龛(广州)半导体有限公司 | Trigger voltage adjustable bidirectional ESD protection device and preparation method thereof |
| CN113675189A (en) * | 2021-10-22 | 2021-11-19 | 武汉市聚芯微电子有限责任公司 | Electrostatic protection device and chip |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100550368C (en) | 2009-10-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100550368C (en) | A kind of thyristor of protecting static discharge | |
| US8466514B2 (en) | Semiconductor power device integrated with improved gate source ESD clamp diodes | |
| CN101728428A (en) | Silicon controlled rectifier and manufacturing method thereof | |
| US10283587B2 (en) | Modulated super junction power MOSFET devices | |
| JPH05211156A (en) | High-voltage planar edge terminal using punchthrough delay injection | |
| JP2008227238A (en) | Semiconductor device | |
| US20190096990A1 (en) | Circuit device including guard ring and method of forming guard ring | |
| CN105720017A (en) | Fingerprint identification chip with enhanced electrostatic discharge protection, system and manufacturing method | |
| CN103296075A (en) | Semiconductor device | |
| WO2016039070A1 (en) | Semiconductor device and production method for semiconductor device | |
| CN103165600A (en) | Electro-static discharge (ESD) protective circuit | |
| US9722035B2 (en) | Method for manufacturing termination structure of semiconductor device | |
| CN101459173B (en) | Static charging protective semiconductor device | |
| CN103050442B (en) | Power semiconductor device with antistatic discharge capacity and manufacturing method | |
| CN106449636B (en) | ESD protection device and method of manufacturing the same | |
| CN202996835U (en) | Power semiconductor device having anti-electrostatic discharge capability | |
| CN214012941U (en) | Silicon controlled rectifier structure for electrostatic protection | |
| CN202996834U (en) | Cellular structure | |
| CN104485329A (en) | ESD protection device of IGBT structure and with high maintaining voltage | |
| CN106898639B (en) | Non-depletion junction terminal expansion and floating field plate field intensity complementary terminal structure | |
| US9583561B2 (en) | Schottky diodes with mesh style region and associated methods | |
| CN204558459U (en) | Based on the chip electrostatic safeguard structure of MOS technique | |
| CN112768445A (en) | Silicon controlled rectifier structure for electrostatic protection | |
| CN203883005U (en) | Integrated circuit protection structure | |
| TWI714683B (en) | Surface-optimised transistor with superlattice structures |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 215123 333 Xinghua street, Suzhou Industrial Park, Jiangsu Patentee after: Warship chip manufacturing (Suzhou) Limited by Share Ltd Address before: 215123 333 Xinghua Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province Patentee before: Hejian Technology (Suzhou) Co., Ltd. |