CN104253192B - 发光元件 - Google Patents

发光元件 Download PDF

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CN104253192B
CN104253192B CN201410299070.1A CN201410299070A CN104253192B CN 104253192 B CN104253192 B CN 104253192B CN 201410299070 A CN201410299070 A CN 201410299070A CN 104253192 B CN104253192 B CN 104253192B
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light
emitting component
crystal film
photon crystal
lead frame
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CN104253192A (zh
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赖俊峰
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Feng Chia University
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Abstract

本发明提供一种发光元件，包括：一光源本体、一导线架、一LED晶粒、一齐纳二极管、一透光层、一光子晶体薄膜。该导线架置于该光源本体底部、该LED晶粒置于该导线架上方、该透光层置于该光源本体的上方、至少一导线与该LED晶粒及该齐纳二极管作电性连接、该光子晶体薄膜置于该LED晶粒的表面和该光源本体的内表面，并利用该光子晶体薄膜的特性以增加发光效率。

Description

发光元件
技术领域
本发明关于一种复合型白光发光元件结构，尤指一种在光源本体内部涂布光子晶体薄膜的发光元件。
背景技术
全球LED产业的发展以白光LED为发展主轴，白光LED的寿命较传统灯具提高10倍以上，另外在亮度方面也更为提升，而白光LED更可以解决废弃灯管所含汞的环保问题，因此，白光LED被视为是未来将取代所有日光灯与白炽灯泡的重要照明设备。目前白光LED较传统白炽灯泡发光效率高出一倍以上，其大部分是由蓝光LED晶粒所发射的蓝光与黄色荧光粉(yttrium aluminum garnet,YAG)组合而成，当蓝光LED晶粒由发光层发出蓝光后，即可将黄色荧光粉激发而发出白光。
一般而言，发光二极管主要包含一基底、一发光层以及至少一个电极，其中发光层是由P型半导体、主动层以及N型半导体依序堆叠而成。当N型半导体与P型半导体之间因电位不同而形成一电位差时，N型半导体中的电子与P型半导体中的电洞则会在主动层结合而发出光线。
上述的发光二极管的发光效率主要取决于主动层的量子效率(光生电子-空穴对数/入射光子数，即发光元件对光敏感性的精确测量)，以及发光二极管的光引出效率(extraction efficiency)。其中，量子效率的提升主要取决于主动层的半导体材料质量及其结构的组合，而光引出效率的提升则取决于从主动层发出的光线的有效利用率。
目前提升发光装置的光引出效率可通过不同的制程技术与晶粒设计来达到改善发光效率的目的，其主要的发展方向有强化电流分布、芯片粘贴(Wafer bonding)、覆晶结构(Flip Chip)、高转换效率荧光粉、高散热封装材料与封装光学结构设计等技术。依目前技术，荧光粉转换光能的效率仍低于60％，且无法有效避免荧光粉受激发后所发射出的光再次被整体发光装置吸收而降低光引出效率的问题，而导致白光LED发光效率无法突破150lm/W。
发明内容
为解决现有技术中所提及白光LED发光效率无法突破150lm/W的缺憾，本发明提出一种发光元件，其包含一光源本体、一导线架、一LED晶粒、一齐纳二极管、一光子晶体薄膜和一透光层，其相对位置为该导线架置于该光源本体底部、该导线架与该齐纳二极管连接、该LED晶粒置于该导线架上方、该光子晶体薄膜置于该LED晶粒至少一部分的表面和该光源本体至少一部分的内表面、该透光层置于该光源本体的上方。
本发明的另一发光元件，其包含该光源本体、该导线架、该LED晶粒、该齐纳二极管、该透光层、该荧光层与该光子晶体薄膜，其相对位置为将该导线架置于该光源本体底部、该导线架与该齐纳二极管连接、该透光层置于该光源本体上方、该LED晶粒置于该导线架上方、该荧光层包覆该LED晶粒、该光子晶体薄膜涂布于该荧光层至少一部分的表面和该光源本体至少一部分的内表面。
本发明是在该光源本体内部涂布该光子晶体薄膜，依该光子晶体薄膜相对位置不同的发光元件，分别为可有效提高该LED晶粒的光引出效率和可调变整体发光元件的色温及演色性，该方法制程简单，并可形成具有高几何稳定性的该光子晶体薄膜。其中，该光子晶体薄膜的粒子间的空隙具有高度的可微调性，可通过调整粒子的材质、粒子的大小、混合溶液的种类以及粒子相对混合溶液的浓度等不同因素，微调整该光子晶体薄膜的折射率及粒子间堆积的紧密度，微调制得的该光子晶体薄膜的特性而改变反射黄光和红光波长，即可避免光线被该LED晶粒再次吸收，有效提升该发光元件的发光效率，也可进行色温及演色性的调变。
附图说明
图1绘示本发明的发光元件的实施例。
图2为光子晶体薄膜的粒子大小分布在190纳米的型态。
图3为光子晶体薄膜的粒子大小分布在230纳米的型态。
图4为光子晶体薄膜的粒子排列紧密型态。
图5为光子晶体薄膜的粒子排列松散型态。
图6为光子晶体薄膜所反射黄色荧光粉激发光的频谱图。
图7为具有光子晶体薄膜的白光LED与不具有光子晶体薄膜的白光LED的波长-相对强度比较图。
图8为本发明的发光元件的另一实施例。
【符号说明】
101 导线架
102 LED晶粒
103 导线
104 透光层
105 光源本体
106 光子晶体薄膜
107 齐纳二极管
108 荧光层
具体实施方式
如图1所示，本发明提供一种发光元件，包含一光源本体105、一导线架101、至少一导线103、一LED晶粒102、一齐纳二极管107、一光子晶体薄膜106与一透光层104，其相对位置为将该导线架101置于该光源本体105底部、该LED晶粒102置于该导线架101上方、该光子晶体薄膜106涂布于该LED晶粒102至少一部分的表面和该光源本体105至少一部分的内表面、该导线架101包含该至少一导线103与该LED晶粒102和该齐纳二极管107作电性连接。
该导线架101的制作材料需要考虑其导电性、热传导性、机械强度、焊接性与抗腐蚀性，常使用的材质为铜合金、42合金(镍:42％，铁:58％)、科瓦合金(镍:29％，钴:17％，铁:54％)与铁镍合金(铁:42％，镍:58％)。
该至少一导线103材料为金、银与铜，其金属材料为导电速率最快的前三名，金的稳定性最好导电速率也最快，但其成本较为高，铜的单价最便宜，其耐离子迁移率性质佳。
该LED晶粒102制程步骤可分为上游、中游及下游，上游包括形成基板(蓝宝石，陶瓷，金属)→单晶棒(GaN，GaAs，GaP)→单芯片→结构设计→磊芯片，中游包括金属蒸镀→光照蚀刻→热处理→切割，下游封装则包括覆晶式(Flip-chip)、芯片粘着式(SMD，surfacemount device)与芯片封装式(COB，chip on board)。
该光子晶体薄膜106的粒子可以为三维胶体粒子，其堆叠结构可以为体心立方式(Body-Centered Cubic Crystal Structure)、面心立方式(Face-Centered CubicCrystal Structure)和简单立方式(Simple cubic lattice)的晶体结构，并且粒子与粒子间的排列可以为四角和六角的松散式(non-close-packed crystal structure)或紧密式(close-packed crystal structure)晶格结构。每一个体心立方单位里含有2个粒子，有8个角落粒子，角落每一个粒子是八分之一个粒子，在中心的单一粒子，则全部包含于此单位中，体心立方式的粒子堆积密度为68％；每一面心立方式单位共有4个粒子，内含有8个角落粒子和6个面心粒子，面心粒子为二分之一个粒子，加总共有4个完整粒子被分配于一单位，其粒子堆积密度为74％；简单立方在每个单位内含有8个角落粒子，共有1个完整粒子被分配于一单位，粒子堆积密度为52％。
该光子晶体薄膜的粒子大小可以为100～800纳米(nm)，膜厚为1～500微米(μm)，其材质可选自于有机高分子、无机化合物、金属或其组合，其中有机高分子如聚苯乙烯系列、聚甲基丙烯酸甲酯系列、聚马来酸系列、聚乳酸系列、聚胺基酸系列的高分子或其组合，无机化合物如Ag2O、CuO、ZnO、CdO、NiO、PdO、CoO、MgO、SiO2、SnO2、TiO2、ZrO2、HfO2、ThO2、CeO2、CoO2、MnO 2、IrO2、VO2、WO 3、MoO3、Al2O3、Y2O3、Yb2O3、Dy2O3、B2O3、Cr2O3、Fe2O3、Fe3O4、V2O5、Nb2O5、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、FeS、FeSe、FeTe、CoS、CoSe、CoTe、NiS、NiSe、NiTe、PbS、PbSe、PbTe、MnS、MnSe、MnTe、SnS、SnSe、SnTe、MoS2、MoSe2、MoTe2、WS2、WSe2、WTe2、Cu2S、Cu2Se、Cu2Te、Bi2S3、Bi2Se3、Bi2Te3、SiC、TiC、ZrC、WC、NbC、TaC、Mo2C、BN、AlN、TiN、ZrN、VN、NbN、TaN、Si3N4、Zr3N4或其组合，金属如Au、Ag、Cu、Fe、Co、Ni、Pd、Pt、Al、Ti、Zr、V、Nb、Mo、W、Mn或其组合。
以该光子晶体薄膜106涂布于该LED晶粒102方式包括喷墨式(ink-jet)、喷洒式(spray)、喷嘴式(nozzle)、刮刀式(blade)、旋转式(spin)或狭缝式(slit)。喷墨式、喷洒式与喷嘴式的工作原理是利用计算机程序控制步进马达带动喷嘴前后左右移动，从喷墨头中喷出的墨水依序喷布于组件上，完成着色的工作；刮刀式是将涂布着料储存于墨斗内，由滚墨轮滚动涂布将着料带出，经由刮刀控制厚度，将着料涂布至组件上；旋转式多应用于光电与半导体制程，在旋转涂布过程中，光阻剂会均匀地涂覆在基板上，用于涂布的液体(具感旋光性的光阻剂)，则会滴至芯片中央；狭缝式为利用一模具挤出一液膜，涂布于移动的基材上。
该透光层104是置该光源本体105是上方，该透光层104为一荧光材料，该荧光材料由主晶体、助活化剂(敏感剂)与活化剂组成。该荧光材料可以为黄色、蓝色、绿色、橙色、红色或其组合，如黄橙色和红黄色的氮化物荧光粉，该荧光材料的材质是选自于有机荧光粉、荧光颜料、无机荧光粉、放射性元素或其组合。
图2至图5是由场效发射式电子显微镜(Field-emission scanning electronmicroscope，FESEM)所拍摄，由图2可见三维胶体光子晶体粒子呈现粒径均一分布于190纳米(nm)，图3则分布在230纳米(nm)，因此其粒径分布系数(Polydispersity index，PDI)范围皆在0.001～0.1。图4为三维胶体光子晶体粒子排列紧密式(close-packed)，图5为三维胶体光子晶体粒子排列松散式(non-close-packed)。图6为利用紫外-可见光光谱仪(UV-Vis Spectrophotometer)所测得该光子晶体薄膜106所反射黄色荧光粉激发光的频谱图，其反射光峰值为单一分布于550纳米(nm)，符合黄光在频谱图520～560纳米(nm)的波段范围，其可有效避免黄色荧光粉受激发后所发射出的光再次被该发光元件吸收而降低光引出效率的问题。图7为本发明的白光LED设有该光子晶体薄膜106(粒径:230纳米，膜厚:10微米)结构与白光LED未设有该光子晶体薄膜106结构的波长-相对强度的比较图，从图7可明显表示具有该光子晶体薄膜106(粒径:230纳米，膜厚:10微米)的白光LED其相对强度高于不具有该光子晶体薄膜106的白光LED，由此可证，该光子晶体薄膜106可反射白光LED以增加其相对强度，使具有该光子晶体薄膜106的白光LED有效提高其发光效率。
如图8所示，为本发明的该发光元件的另一实施例，包含该光源本体105、该导线架101、该至少一导线103、该LED晶粒102、该齐纳二极管107、该透光层104、该光子晶体薄膜106与一荧光层108，其相对位置为将该导线架101置于该光源本体105底部、该透光层104置于该光源本体105上方、该LED晶粒102置于该导线架101上方、该荧光层108包覆该LED晶粒102、该光子晶体薄膜106涂布于该荧光层108至少一部分的表面和该光源本体105至少一部分的内表面、该导线架101包含该至少一导线103与该LED晶粒102和该齐纳二极管107作电性连接。该透光层104为一硅胶材料，该硅胶材料具有抗紫外光与抗氧化的功能，如今LED照明市场朝向更高功率且高亮度的发展，该硅胶材料则愈来愈广为使用，该硅胶材料不仅可耐高温程度承受较传统习用的环氧树脂为高，且具有更好的透光率。该荧光层108为该荧光材料所组成，该荧光材料由主晶体、助活化剂(敏感剂)与活化剂组成，该荧光材料可以为黄色、蓝色、绿色、橙色、红色或其组合，如黄橙色和红黄色的氮化物荧光粉，该荧光材料的材质是选自于有机荧光粉、荧光颜料、无机荧光粉、放射性元素或其组合。该光子晶体薄膜106具有调节该发光元件的色温与演色性的功能，也具有反射因该透光层104所反射的白光LED功能，其也能有效增强光引出效率的效果。
以上所述仅为本发明的较佳实施例而已，并不能以此限定本发明实施的范围，即依本发明权利要求及说明内容所作的简单的等效变化与修饰，皆仍属本发明涵盖的。

Claims (15)

1.一种发光元件，其包含：
一光源本体；
一导线架，置于该光源本体底部，该导线架与一齐纳二极管连接；
一LED晶粒，置于该导线架上方；
一荧光层，仅包覆该LED晶粒，且该荧光层的体积小于该光源本体及该导线架共同形成的内部空间，且该荧光层的表面与该光源本体及该导线架的内表面形成一连续内表面；
一光子晶体薄膜，涂布满该连续内表面，该光子晶体薄膜为三维胶体粒子所排列而成，且该光子晶体薄膜的粒子堆叠方式为体心立方式的晶体结构，而粒子与粒子间的排列为四角的松散式晶格结构；以及
一透光层，置于该光源本体的上方。
2.如权利要求1所述的发光元件，其特征在于：该透光层为一荧光材料或一硅胶材料。
3.如权利要求2所述的发光元件，其特征在于：该荧光材料为黄色、蓝色、绿色、橙色、红色或其组合。
4.如权利要求2所述的发光元件，其特征在于：该荧光材料的材质是选自于有机荧光粉、荧光颜料、无机荧光粉、放射性元素或其组合。
5.如权利要求1所述的发光元件，其特征在于：该导线架的材质为铜合金、科瓦(Kovar)合金或铁镍合金。
6.如权利要求1所述的发光元件，其特征在于：该导线架包含至少一导线，该至少一导线与该LED晶粒和该齐纳二极管作电性连接。
7.如权利要求6所述的发光元件，其特征在于：该至少一导线为金线、铜线或银线。
8.如权利要求1所述的发光元件，其特征在于：该LED晶粒为红光LED、蓝光LED、绿光LED或紫外光LED。
9.如权利要求1所述的发光元件，其特征在于：该光子晶体薄膜的涂布方式为喷墨式、喷洒式、喷嘴式、刮刀式、旋转式或狭缝式。
10.如权利要求1所述的发光元件，其特征在于：该光子晶体薄膜的粒子平均粒径为100nm～800nm。
11.如权利要求1所述的发光元件，其特征在于：该光子晶体薄膜的厚度为1μm～500μm。
12.如权利要求1所述的发光元件，其特征在于：该光子晶体薄膜的粒子的材质选自于有机高分子、无机化合物、金属或其组合。
13.如权利要求12所述的发光元件，其特征在于：有机高分子为聚苯乙烯系列、聚甲基丙烯酸甲酯系列、聚马来酸系列、聚乳酸系列、聚胺基酸系列的高分子或其组合。
14.如权利要求12所述的发光元件，其特征在于：无机化合物为Ag2O、CuO、ZnO、CdO、NiO、PdO、CoO、MgO、SiO2、SnO2、TiO2、ZrO2、HfO2、ThO2、CeO2、CoO2、MnO2、IrO2、VO2、WO3、MoO3、Al2O3、Y2O3、Yb2O3、Dy2O3、B2O3、Cr2O3、Fe2O3、Fe3O4、V2O5、Nb2O5、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、FeS、FeSe、FeTe、CoS、CoSe、CoTe、NiS、NiSe、NiTe、PbS、PbSe、PbTe、MnS、MnSe、MnTe、SnS、SnSe、SnTe、MoS2、MoSe2、MoTe2、WS2、WSe2、WTe2、Cu2S、Cu2Se、Cu2Te、Bi2S3、Bi2Se3、Bi2Te3、SiC、TiC、ZrC、WC、NbC、TaC、Mo2C、BN、AlN、TiN、ZrN、VN、NbN、TaN、Si3N4、Zr3N4或其组合。
15.如权利要求12所述的发光元件，其特征在于：金属为Au、Ag、Cu、Fe、Co、Ni、Pd、Pt、Al、Ti、Zr、V、Nb、Mo、W、Mn或其组合。
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