TW201501361A - 發光元件 - Google Patents
發光元件 Download PDFInfo
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- TW201501361A TW201501361A TW102123278A TW102123278A TW201501361A TW 201501361 A TW201501361 A TW 201501361A TW 102123278 A TW102123278 A TW 102123278A TW 102123278 A TW102123278 A TW 102123278A TW 201501361 A TW201501361 A TW 201501361A
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- emitting element
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- 239000004038 photonic crystal Substances 0.000 claims abstract description 50
- 239000002245 particle Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
- 239000000843 powder Substances 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 150000002484 inorganic compounds Chemical class 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- 229920000620 organic polymer Polymers 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000000049 pigment Substances 0.000 claims description 3
- 230000002285 radioactive effect Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 claims description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 101100069231 Caenorhabditis elegans gkow-1 gene Proteins 0.000 claims description 2
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- 229910018871 CoO 2 Inorganic materials 0.000 claims description 2
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 2
- 229910017231 MnTe Inorganic materials 0.000 claims description 2
- 229910016001 MoSe Inorganic materials 0.000 claims description 2
- 229910005913 NiTe Inorganic materials 0.000 claims description 2
- 229910002665 PbTe Inorganic materials 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 2
- 229910005642 SnTe Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 2
- 229920000592 inorganic polymer Polymers 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 150000002734 metacrylic acid derivatives Chemical class 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229920000747 poly(lactic acid) Polymers 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 239000004626 polylactic acid Substances 0.000 claims description 2
- 229920001444 polymaleic acid Polymers 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- QHASIAZYSXZCGO-UHFFFAOYSA-N selanylidenenickel Chemical compound [Se]=[Ni] QHASIAZYSXZCGO-UHFFFAOYSA-N 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010944 silver (metal) Substances 0.000 claims description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910000833 kovar Inorganic materials 0.000 claims 1
- 239000010409 thin film Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000000605 extraction Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 239000012190 activator Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000009877 rendering Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- -1 Ag 2 O Chemical class 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000004282 Grewia occidentalis Species 0.000 description 1
- 206010034960 Photophobia Diseases 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Abstract
本發明提供一種發光元件，包括：一光源本體、一導線架、一LED晶粒、一齊納二極體、一透光層、一光子晶體薄膜。該導線架置於該光源本體底部、該LED晶粒置於該導線架上方、該透光層置於該光源本體之上方、至少一導線與該LED晶粒及該齊納二極體作電性連接、該光子晶體薄膜置於該LED晶粒之表面和該光源本體之內表面，並利用該光子晶體薄膜之特性以增加發光效率。
Description
本發明是有關於一種複合型白光發光元件結構，尤指一種在光源本體內部塗佈光子晶體薄膜之發光元件。
全球LED產業之發展以白光LED為發展主軸，白光LED之壽命較傳統燈具提高10倍以上，另外在亮度方面也更為提升，而白光LED更可以解決廢棄燈管所含汞的環保問題，因此，白光LED被視為是未來將取代所有日光燈與白熾燈泡的重要照明設備。目前白光LED較傳統白熾燈泡發光效率高出一倍以上，其大部分是由藍光LED晶粒所發射之藍光與黃色螢光粉(yttrium aluminum garnet,YAG)組合而成，當藍光LED晶粒由發光層發出藍光後，即可將黃色螢光粉激發而發出白光。
一般而言，發光二極體主要包含一基底、一發光層以及至少一個電極，其中發光層係由P型半導體、主動層以及N型半導體依序堆疊而成。當N型半導體與P型半導體之間因電位不同而形成一電位差時，N型半導體中的電子與P型半導體中的電洞則會在主動層結合而發出光線。
上述之發光二極體的發光效率主要取決於主動層的量
子效率(光生電子-空穴對數/入射光子數，即發光元件對光敏感性的精確測量)，以及發光二極體的光引出效率(extraction efficiency)。其中，量子效率的提升主要取決於主動層之半導體材料品質及其結構的組合，而光引出效率的提升則取決於從主動層發出之光線的有效利用率。
目前提升發光裝置之光引出效率可藉由不同的製程技術與晶粒設計來達到改善發光效率的目的，其主要的發展方向有強化電流分佈、晶片黏貼(Wafer bonding)、覆晶結構(Flip Chip)、高轉換效率螢光粉、高散熱封裝材料與封裝光學結構設計等技術。依目前技術，螢光粉轉換光能的效率仍低於60%，且無法有效避免螢光粉受激發後所發射出的光再次被整體發光裝置吸收而降低光引出效率的問題，而導致白光LED發光效率無法突破150 lm/W。
為解決先前技術中所提及白光LED發光效率無法突破150 lm/W之缺憾，本發明提出一種發光元件，其包含一光源本體、一導線架、一LED晶粒、一齊納二極體、一光子晶體薄膜和一透光層，其相對位置為該導線架置於該光源本體底部、該導線架與該齊納二極體連接、該LED晶粒置於該導線架上方、該光子晶體薄膜置於該LED晶粒至少一部份之表面和該光源本體至少一部份之內表面、該透光層置於該光源本體之上方。
本發明之另一發光元件，其包含該光源本體、該導線
架、該LED晶粒、該齊納二極體、該透光層、該螢光層與該光子晶體薄膜，其相對位置為將該導線架置於該光源本體底部、該導線架與該齊納二極體連接、該透光層置於該光源本體上方、該LED晶粒置於該導線架上方、該螢光層包覆該LED晶粒、該光子晶體薄膜塗佈於該螢光層至少一部份之表面和該光源本體至少一部份之內表面。
本發明係在該光源本體內部塗佈該光子晶體薄膜，依該光子晶體薄膜相對位置不同之發光元件，分別為可有效提高該LED晶粒的光引出效率和可調變整體發光元件之色溫及演色性，該方法製程簡單，並可形成具有高幾何穩定性的該光子晶體薄膜。其中，該光子晶體薄膜之粒子間的空隙具有高度的可微調性，可藉由調整粒子的材質、粒子的大小、混合溶液的種類以及粒子相對混合溶液之濃度等不同因素，微調整該光子晶體薄膜的折射率及粒子間堆積的緊密度，微調製得的該光子晶體薄膜之特性而改變反射黃光和紅光波長，即可避免光線被該LED晶粒再次吸收，有效提升該發光元件之發光效率，也可進行色溫及演色性之調變。
101‧‧‧導線架
102‧‧‧LED晶粒
103‧‧‧導線
104‧‧‧透光層
105‧‧‧光源本體
106‧‧‧光子晶體薄膜
107‧‧‧齊納二極體
108‧‧‧螢光層
圖1繪示本發明之發光元件之實施例
圖2為光子晶體薄膜之粒子大小分布在190奈米的型態
圖3為光子晶體薄膜之粒子大小分布在230奈米的型態
圖4為光子晶體薄膜之粒子排列緊密型態
圖5為光子晶體薄膜之粒子排列鬆散型態
圖6為光子晶體薄膜所反射黃色螢光粉激發光之頻譜圖
圖7為具有光子晶體薄膜之白光LED與不具有光子晶體薄膜之
白光LED的波長-相對強度比較圖
圖8為本發明之發光元件之另一實施例
如圖1所示，本發明提供一種發光元件，包含一光源本體105、一導線架101、至少一導線103、一LED晶粒102、一齊納二極體107、一光子晶體薄膜106與一透光層104，其相對位置為將該導線架101置於該光源本體105底部、該LED晶粒102置於該導線架101上方、該光子晶體薄膜106塗佈於該LED晶粒102至少一部份之表面和該光源本體105至少一部份之內表面、該導線架101包含該至少一導線103與該LED晶粒102和該齊納二極體107作電性連接。
該導線架101之製作材料需要考慮其導電性、熱傳導性、機械強度、焊接性與抗腐蝕性，常使用的材質為銅合金、42合金(鎳：42%，鐵：58%)、科瓦合金(鎳：29%，鈷：17%，鐵：54%)與鐵鎳合金(鐵：42%，鎳：58%)。
該至少一導線103材料為金、銀與銅，其金屬材料為導電速率最快的前三名，金的穩定性最好導電速率也最快，但其
成本較為高，銅的單價最便宜，其耐離子遷移率性質佳。
該LED晶粒102製程步驟可分為上游、中游及下游，上游包括形成基板(藍寶石，陶瓷，金屬)→單晶棒(GaN，GaAs，GaP)→單晶片→結構設計→磊晶片，中游包括金屬蒸鍍→光照蝕刻→熱處理→切割，下游封裝則包括覆晶式(Flip-chip)、晶片黏著式(SMD，surface mount device)與晶片封裝式(COB，chip on board)。
該光子晶體薄膜106之粒子可以為三維膠體粒子，其堆疊結構可以為體心立方式(Body-Centered Cubic Crystal Structure)、面心立方式(Face-Centered Cubic Crystal Structure)和簡單立方式(Simple cubic lattice)之晶體結構，並且粒子與粒子間的排列可以為四角和六角之鬆散式(non-close-packed crystal structure)或緊密式(close-packed crystal structure)晶格結構。每一個體心立方單位裡含有2個粒子，有8個角落粒子，角落每一個粒子係八分之一個粒子，在中心的單一粒子，則全部包含於此單位中，體心立方式的粒子堆積密度為68%；每一面心立方式單位共有4個粒子，內含有8個角落粒子和6個面心粒子，面心粒子為二分之一個粒子，加總共有4個完整粒子被分配於一單位，其粒子堆積密度為74%；簡單立方在每個單位內含有8個角落粒子，共有1個完整粒子被分配於一單位，粒子堆積密度為52%。
該光子晶體薄膜之粒子大小可以為100~800奈米(nm)，膜厚為1~500微米(μm)，其材質可選自於有機高分子、
無機高分子、有機化合物、無機化合物、金屬或其組合，其中有機高分子如聚苯乙烯系列、聚甲基丙烯酸甲酯系列、聚馬來酸系列、聚乳酸系列、聚胺基酸系列的高分子或其組合，無機化合物如Ag2O、CuO、ZnO、CdO、NiO、PdO、CoO、MgO、SiO2、SnO2、TiO2、ZrO2、HfO2、ThO2、CeO2、CoO2、MnO2、IrO2、VO2、WO3、MoO3、Al2O3、Y2O3、Yb2O3、Dy2O3、B2O3、Cr2O3、Fe2O3、Fe3O4、V2O5、Nb2O5、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、FeS、FeSe、FeTe、CoS、CoSe、CoTe、NiS、NiSe、NiTe、PbS、PbSe、PbTe、MnS、MnSe、MnTe、SnS、SnSe、SnTe、MoS2、MoSe2、MoTe2、WS2、WSe2、WTe2、Cu2S、Cu2Se、Cu2Te、Bi2S3、Bi2Se3、Bi2Te3、SiC、TiC、ZrC、WC、NbC、TaC、Mo2C、BN、AlN、TiN、ZrN、VN、NbN、TaN、Si3N4、Zr3N4或其組合，金屬如Au、Ag、Cu、Fe、Co、Ni、Pd、Pt、Al、Si、Ti、Zr、V、Nb、Mo、W、Mn或其組合。
以該光子晶體薄膜106塗佈於該LED晶粒102方式包括噴墨式(ink-jet)、噴灑式(spray)、噴嘴式(nozzle)、刮刀式(blade)、旋轉式(spin)或狹縫式(slit)。噴墨式、噴灑式與噴嘴式的工作原理是利用電腦程式控制步進馬達帶動噴嘴前後左右移動，從噴墨頭中噴出的墨水依序噴佈於元件上，完成著色的工作；刮刀式係將塗佈著料儲存於墨斗內，由滾墨輪滾動塗佈將著料帶出，經由刮刀控制厚度，將著料塗佈至元件上；旋轉式多應用於光電與半導體製程，在旋轉塗佈過程中，光阻劑會均
勻地塗覆在基板上，用於塗佈的液體(具感光性的光阻劑)，則會滴至晶片中央；狹縫式為利用一模具擠出一液膜，塗布於移動的基材上。
該透光層104係置該光源本體105之上方，該透光層104為一螢光材料，該螢光材料由主晶體、助活化劑(敏感劑)與活化劑組成。該螢光材料可以為黃色、藍色、綠色、橙色、紅色或其組合，如黃橙色和紅黃色之氮化物螢光粉，該螢光材料之材質是選自於有機螢光粉、螢光顏料、無機螢光粉、放射性元素或其組合。
圖2至圖5是由場效發射式電子顯微鏡(Field-emission scanning electron microscope，FESEM)所拍攝，由圖2可見三維膠體光子晶體粒子呈現粒徑均一分布於190奈米(nm)，圖3則分佈在230奈米(nm)，因此其粒徑分佈係數(Polydispersity index，PDI)範圍皆在0.001~0.1。圖4為三維膠體光子晶體粒子排列緊密式(close-packed)，圖5為三維膠體光子晶體粒子排列鬆散式(non-close-packed)。圖6為利用紫外-可見光光譜儀(UV-Vis Spectrophotometer)所測得該光子晶體薄膜106所反射黃色螢光粉激發光之頻譜圖，其反射光峰值為單一分佈於550奈米(nm)，符合黃光在頻譜圖520~560奈米(nm)之波段範圍，其可有效避免黃色螢光粉受激發後所發射出的光再次被該發光元件吸收而降低光引出效率的問題。圖7為本發明之白光LED設有該光子晶體薄膜106(粒徑：230奈米，膜厚：10微米)結構
與白光LED未設有該光子晶體薄膜106結構之波長-相對強度之比較圖，從圖7可明顯表示具有該光子晶體薄膜106(粒徑：230奈米，膜厚：10微米)之白光LED其相對強度高於不具有該光子晶體薄膜106之白光LED，由此可證，該光子晶體薄膜106可反射白光LED以增加其相對強度，使具有該光子晶體薄膜106之白光LED有效提高其發光效率。
如圖8所示，為本發明之該發光元件之另一實施例，包含該光源本體105、該導線架101、該至少一導線103、該LED晶粒102、該齊納二極體107、該透光層104、該光子晶體薄膜106與一螢光層108，其相對位置為將該導線架101置於該光源本體105底部、該透光層104置於該光源本體105上方、該LED晶粒102置於該導線架101上方、該螢光層108包覆該LED晶粒102、該光子晶體薄膜106塗佈於該螢光層108至少一部份之表面和該光源本體105至少一部份之內表面、該導線架101包含該至少一導線103與該LED晶粒102和該齊納二極體107作電性連接。該透光層104為一矽膠材料，該矽膠材料具有抗紫外光與抗氧化之功能，如今LED照明市場朝向更高功率且高亮度的發展，該矽膠材料則愈來愈廣為使用，該矽膠材料不僅可耐高溫程度承受較傳統習用之環氧樹脂為高，且具有更好的透光率。該螢光層108為該螢光材料所組成，該螢光材料由主晶體、助活化劑(敏感劑)與活化劑組成，該螢光材料可以為黃色、藍色、綠色、橙色、紅色或其組合，如黃橙色和紅黃色之氮化物
螢光粉，該螢光材料之材質是選自於有機螢光粉、螢光顏料、無機螢光粉、放射性元素或其組合。該光子晶體薄膜106具有調節該發光元件之色溫與演色性之功能，亦具有反射因該透光層104所反射之白光LED功能，其也能有效增強光引出效率之效果。
101‧‧‧導線架
102‧‧‧LED晶粒
103‧‧‧導線
104‧‧‧透光層
105‧‧‧光源本體
106‧‧‧光子晶體薄膜
107‧‧‧齊納二極體
Claims (19)
- 一種發光元件，其包含：一光源本體；一導線架，置於該光源本體底部，該導線架與一齊納二極體連接；一LED晶粒，置於該導線架上方；一光子晶體薄膜，置於該LED晶粒至少一部份之表面和該光源本體至少一部份之內表面；以及一透光層，置於該光源本體之上方。
- 如申請專利範圍第1項所述之發光元件，該透光層可以為一螢光材料。
- 如申請專利範圍第2項所述之發光元件，該螢光材料可以為黃色、藍色、綠色、橙色、紅色或其組合。
- 如申請專利範圍第2項所述之發光元件，該螢光材料之材質是選自於有機螢光粉、螢光顏料、無機螢光粉、放射性元素或其組合。
- 如申請專利範圍第1項所述之發光元件，該導線架之材質可以為銅合金、科瓦(Kovar)合金或鐵鎳合金。
- 如申請專利範圍第1項所述之發光元件，該導線架包含至少一導線，該至少一導線與該LED晶粒和該齊納二極體作電性連接。
- 如申請專利範圍第6項所述之發光元件，該至少一導線可以為金線、銅線或銀線。
- 如申請專利範圍第1項所述之發光元件，該LED晶粒可以為紅光LED、藍光LED、綠光LED或紫外光LED。
- 如申請專利範圍第1項所述之發光元件，該光子晶體薄膜之塗佈方式可以為噴墨式、噴灑式、噴嘴式、刮刀式、旋轉式或狹縫式，塗佈於該LED晶粒至少一部份之表面和該光源本體至少一部份之內表面。
- 如申請專利範圍第1項所述之發光元件，該光子晶體薄膜可以為三維膠體粒子所排列而成。
- 如申請專利範圍第10項所述之發光元件，該光子晶體薄膜之粒子平均粒徑可以為100~800奈米(nm)，
- 如申請專利範圍第10項所述之發光元件，該光子晶體薄膜之厚度可以為1~500微米(μm)。
- 如申請專利範圍第10項所述之發光元件，該光子晶體薄膜之粒子堆疊方式可以為體心立方式、面心立方式、簡單立方式之晶體結構，而粒子與粒子間的排列可為四角或六角之緊密式和鬆散式晶格結構，且堆疊於該LED晶粒至少一部份之表面和該光源本體至少一部份之內表面。
- 如申請專利範圍第10項所述之發光元件，該光子晶體薄膜之粒子的材質可選自於有機高分子、無機高分子、有機化合物、無機化合物、金屬或其組合。
- 如申請專利範圍第14項所述之發光元件，其中有機高分子可以為聚苯乙烯系列、聚甲基丙烯酸甲酯系列、聚馬來酸系列、聚乳酸系列、聚胺基酸系列的高分子或其組合。
- 如申請專利範圍第14項所述之發光元件，其中無機化合物可以為Ag2O、CuO、ZnO、CdO、NiO、PdO、CoO、MgO、SiO2、SnO2、TiO2、ZrO2、HfO2、ThO2、CeO2、CoO2、MnO2、IrO2、VO2、WO3、MoO3、Al2O3、Y2O3、Yb2O3、Dy2O3、B2O3、Cr2O3、Fe2O3、Fe3O4、V2O5、Nb2O5、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、FeS、FeSe、FeTe、CoS、CoSe、CoTe、NiS、NiSe、NiTe、PbS、PbSe、PbTe、MnS、MnSe、MnTe、SnS、SnSe、SnTe、MoS2、MoSe2、MoTe2、WS2、WSe2、WTe2、Cu2S、Cu2Se、Cu2Te、Bi2S3、Bi2Se3、Bi2Te3、SiC、TiC、ZrC、WC、NbC、TaC、Mo2C、BN、AlN、TiN、ZrN、VN、NbN、TaN、Si3N4、Zr3N4或其組合。
- 如申請專利範圍第14項所述之發光元件，其中金屬可以為Au、Ag、Cu、Fe、Co、Ni、Pd、Pt、Al、Si、Ti、Zr、V、Nb、Mo、W、Mn或其組合。
- 一種發光元件，其包含：一光源本體；一導線架，置於該光源本體底部，該導線架與一齊納二極體連接；一LED晶粒，置於該導線架上方；一螢光層，包覆該LED晶粒；一光子晶體薄膜，置於該螢光層至少一部份之表面和該光源本體至少一部份之內表面；以及一透光層，置於該光源本體之上方。
- 如申請專利範圍第18項所述之發光元件，該透光層可以為一矽膠材 料。
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| TW102123278A TWI573294B (zh) | 2013-06-28 | 2013-06-28 | 發光元件 |
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| JP6668996B2 (ja) * | 2016-07-29 | 2020-03-18 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
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| DE102004052456B4 (de) * | 2004-09-30 | 2007-12-20 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung |
| CN101894899A (zh) * | 2008-01-24 | 2010-11-24 | 晶元光电股份有限公司 | 发光装置、背光模块装置和照明装置 |
| KR100933529B1 (ko) * | 2008-05-28 | 2009-12-23 | 재단법인서울대학교산학협력재단 | 광자결정 구조체를 구비한 발광소자 |
| CN102263187A (zh) * | 2010-05-31 | 2011-11-30 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
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