CN104253173A - A thin-film / crystalline-silicon stacked solar cell and a manufacturing method thereof - Google Patents
A thin-film / crystalline-silicon stacked solar cell and a manufacturing method thereof Download PDFInfo
- Publication number
- CN104253173A CN104253173A CN201110340994.8A CN201110340994A CN104253173A CN 104253173 A CN104253173 A CN 104253173A CN 201110340994 A CN201110340994 A CN 201110340994A CN 104253173 A CN104253173 A CN 104253173A
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- silicon
- cell
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- battery
- solar cell
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- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 69
- 239000010703 silicon Substances 0.000 claims abstract description 69
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 68
- 239000010408 film Substances 0.000 claims abstract description 30
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims description 25
- 238000000151 deposition Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a thin-film / crystalline-silicon stacked solar cell and a manufacturing method thereof. A dual-junction stacked cell structure consists of a bottom cell which is a crystalline-silicon cell and a top cell which is a silicon film cell. The crystalline-silicon cell employs an n-type silicon slice as a substrate to form a base region for the cell, wherein on a front surface of the silicon substrate, a p-type layer is formed as a cell emission region by using high temperature diffusion, and on the back surface of the silicon slice, a passivation layer and a back electrode are deposited. The silicon film cell is deposited on the front surface of the crystalline-silicon cell, wherein the deposition can occur in the following sequence: an n-type layer, an intrinsic layer and a p-type layer. A transparent conducting thin film is deposited on the p-type layer, and the top of the transparent conducting thin film is provided with a metal electrode. The inventive thin-film / crystalline-silicon stacked solar cell and the manufacturing method thereof are characterized in that due to the larger forbidden band width of the silicon film material, a short wavelength light with high energy is absorbed by the top silicon film cell, and the light which is transmitted through the top cell is absorbed by the bottom crystalline-silicon cell, the thickness of which is adjustable in order to obtain an electric current density matched with that of the top cell. By means of the dual-junction stacked cell structure, it is possible to expand a spectral response range of the cell, improve a conversion efficiency of the cell, and meanwhile to obtain a high open-circuit voltage and a better high-temperature performance.
Description
Technical field
The present invention relates to a kind of new solar battery structure, particularly about a kind of film crystal silicon stacked solar cell, cascade solar cell and manufacture method thereof.
Technical background
It is crystal silicon material that crystal silicon solar battery adopts, its energy gap is 1.12eV, due in photoelectric conversion process, the photon that energy is more than or equal to material energy gap can inspire electron-hole pair in silicon materials, and change into electric energy, crystal silicon battery can utilize solar spectrum can reach 1.1 μm, therefore larger short-circuit current density can be obtained, but when silicon materials absorbed photons energy is greater than energy gap, the energy being greater than energy gap will convert thermal energy consumption to and dissipate, can not electric energy be converted to, which limits the raising of photoelectric conversion efficiency.
The silicon thin-film battery of laminated construction, absorb the photon of different-energy in zones of different according to the material of different band gap width, the material of broad-band gap can be adopted to absorb short-wave band light, and low bandgap material absorbs long-wave band light, thus widens spectrum respective range and the battery conversion efficiency of solar cell.But because silicon thin film is the material of high defect concentration, photo-generated carrier is easy to compound, especially when preparing laminated-silicon thin film battery, in order to regulate the energy gap of end battery, usually to adopt the method for controlled micro crystallization or alloying, difficulty prepared by the Large-Area-Uniform increased further.
Summary of the invention
For the problems referred to above, the object of the invention is to the shortcoming overcoming existing battery, conversion efficiency is high, the simple film of preparation technology crystal silicon stacked solar cell, cascade solar cell.
To achieve these goals, the present invention takes following technical scheme:
A kind of film heterojunction stacked solar cell, cascade solar cell, it is characterized in that: its adopts binode laminated cell structure, and end battery is crystal silicon battery, and top battery is silicon thin-film battery; Crystal silicon battery adopts n-type silicon chip substrate as base, and front surface adopts High temperature diffusion to form p-type layer as emitter region, back surface deposit passivation layer and back electrode; Silicon thin-film battery is deposited on crystal silicon battery front surface, and sedimentary sequence is n-layer, intrinsic layer, p-type layer; Deposit transparent conductive film in silicon thin-film battery p-type layer, electrode before nesa coating is arranged.
Described n-type silicon chip can be monocrystalline silicon piece, also can be polysilicon.
Described passivation layer can be N-shaped doped silicon film, also can be the bilayer that formed of buffer transition layer and N-shaped doped silicon film or multilayer silicon thin film.
Described back electrode can be aluminium film, also can be the multilayer film that transparent conductive film and aluminium film are formed.
Described silicon thin film can adopt any one or a few combination in a-Si:H, a-SiC:H, a-SiO:H, uc-Si:H, uc-SiC:H or uc-SiO:H.
Film the manufacture method of heterojunction stacked solar cell, cascade solar cell, its step comprises: 1) adopt High temperature diffusion to form p-diffusion layer, 2 at n-type silicon chip front surface) adopt common process to remove back of the body knot and surface boron silex glass, and silicon chip to be cleaned; 3) passivation layer is formed at n-type silicon chip backside deposition silicon thin film, 4) at passivation layer surface depositing electrically conductive film as back electrode, 5) then, crystal silicon solar battery p-diffusion layer is used deposit thin films of silicon successively form n-layer, intrinsic layer, p-type layer, 6) last at silicon thin-film battery p-type layer surface deposition transparent conductive film, and front electrode is set thereon.
The present invention adopt film the laminated cell structure of crystal silicon, because silicon thin film material energy gap is comparatively large, silicon thin film top battery absorbs high-octane short wavelength light, and the light through top battery is absorbed by battery at the bottom of crystal silicon, and adjustable crystal silicon battery thickness, with the current density obtained with push up battery and mate.Adopt this structure, the spectrum respective range of battery can be expanded, improve battery open circuit voltage and conversion efficiency, obtain good high-temperature behavior simultaneously.
Accompanying drawing explanation
Fig. 1 be a kind of film provided by the invention the structural representation of crystal silicon stacked solar cell, cascade solar cell
Fig. 2 be a kind of film provided by the invention the manufacturing flow chart of crystal silicon stacked solar cell, cascade solar cell
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing 1 and Fig. 2, the present invention is described in more detail.
1) adopt thickness 200 μm, resistivity be the n-type silicon chip 1 of 5 Ω cm as substrate, effects on surface cleans.
2) form p-diffusion layer 4 at the front surface of n-type silicon chip 1 with high-temperature diffusion method, the square resistance of p-diffusion layer 4 is at 50 Ω/.
3) adopting is that conventional chemistry removes back of the body knot to diffusion silicon chip, goes Pyrex and surface cleaning processing.
4) at the silicon thin film of n-type silicon chip 1 backside deposition N-shaped doping, as a-Si:H, a-SiC:H or uc-Si:H, thickness 20nm, the passivation layer 2 of formation.
5) use magnetically controlled sputter method deposited aluminum layer on passivation layer 2 surface, thickness is 1.5 μm, forms back electrode 3.
6) in p-diffusion layer 4, deposit intrinsic layer 6, the 20nm p-type layer 7 of 20nm n-layer 5,100nm successively with PECVD, obtain n i p structure silicon-film solar-cell.
7) in silicon-film solar-cell p-type layer 7, magnetron sputtering deposition transparent conductive film 8 is used, as ito thin film, thickness 70nm; Then silk screen printing low-temperature silver slurry on transparent conductive film 8, low temperature drying, obtains front electrode 9, thus complete film the manufacture of crystal silicon stacked solar cell, cascade solar cell.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a Bao Mo crystal silicon stacked solar cell, cascade solar cell, is characterized in that: it adopts binode laminated cell structure, and end battery is crystal silicon battery, and top battery is silicon thin-film battery; Crystal silicon battery adopts n-type silicon chip substrate as base, and front surface adopts High temperature diffusion to form p-type layer as emitter region, back surface deposit passivation layer and back electrode; Silicon thin-film battery is deposited on crystal silicon battery front surface, and sedimentary sequence is n-layer, intrinsic layer, p-type layer; Deposit transparent conductive film in silicon thin-film battery p-type layer, electrode before nesa coating is arranged.
2. a kind of Bao Mo crystal silicon stacked solar cell, cascade solar cell as claimed in claim 1, is characterized in that: described laminated cell is binode laminated cell, is made up of end battery and top battery.
3. a kind of film as claimed in claim 1 crystal silicon stacked solar cell, cascade solar cell, it is characterized in that: battery of the described end is crystal silicon battery, top battery is silicon thin-film battery.
4. solar cell as claimed in claim 1, its n-type silicon chip can be monocrystalline silicon piece also can be polysilicon chip.
5. solar cell as claimed in claim 1, its silicon thin film can be any one or a few combination in a-Si:H, a-SiC:H, a-SiO:H, uc-Si:H, uc-SiC:H or uc-SiO:H.
6. a preparation method for Bao Mo crystal silicon stacked solar cell, cascade solar cell, its step comprises:
1) High temperature diffusion is adopted to form p-diffusion layer at n-type silicon chip front surface;
2) adopt common process to remove back of the body knot and surface boron silex glass, and silicon chip is cleaned;
3) passivation layer is formed at n-type silicon chip backside deposition silicon thin film;
4) at passivation layer surface depositing electrically conductive film as back electrode;
5) then, crystal silicon solar battery p-diffusion layer is used deposit thin films of silicon successively to form n-layer, intrinsic layer, p-type layer;
6) last at silicon thin-film battery p-type layer surface deposition transparent conductive film, and front electrode is set thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110340994.8A CN104253173A (en) | 2011-11-02 | 2011-11-02 | A thin-film / crystalline-silicon stacked solar cell and a manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110340994.8A CN104253173A (en) | 2011-11-02 | 2011-11-02 | A thin-film / crystalline-silicon stacked solar cell and a manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104253173A true CN104253173A (en) | 2014-12-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110340994.8A Pending CN104253173A (en) | 2011-11-02 | 2011-11-02 | A thin-film / crystalline-silicon stacked solar cell and a manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784110A (en) * | 2016-12-16 | 2017-05-31 | 上海电机学院 | A kind of laminate solar photovoltaic cell based on low price crystal silicon chip |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7148417B1 (en) * | 2003-03-31 | 2006-12-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | GaP/silicon tandem solar cell with extended temperature range |
| CN101964368A (en) * | 2009-07-21 | 2011-02-02 | 深圳市宇光高科新能源技术有限公司 | Laminated solar battery and manufacturing method thereof |
| CN102064210A (en) * | 2010-11-11 | 2011-05-18 | 陈哲艮 | Silicon-based double-junction solar cell with homojunction and heterojunction and preparation method thereof |
-
2011
- 2011-11-02 CN CN201110340994.8A patent/CN104253173A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7148417B1 (en) * | 2003-03-31 | 2006-12-12 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | GaP/silicon tandem solar cell with extended temperature range |
| CN101964368A (en) * | 2009-07-21 | 2011-02-02 | 深圳市宇光高科新能源技术有限公司 | Laminated solar battery and manufacturing method thereof |
| CN102064210A (en) * | 2010-11-11 | 2011-05-18 | 陈哲艮 | Silicon-based double-junction solar cell with homojunction and heterojunction and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784110A (en) * | 2016-12-16 | 2017-05-31 | 上海电机学院 | A kind of laminate solar photovoltaic cell based on low price crystal silicon chip |
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Application publication date: 20141231 |