CN104244154A - Mems麦克风组件中的开口腔基板及其制造方法 - Google Patents
Mems麦克风组件中的开口腔基板及其制造方法 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0061—Packages or encapsulation suitable for fluid transfer from the MEMS out of the package or vice versa, e.g. transfer of liquid, gas, sound
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
- H04R1/04—Structural association of microphone with electric circuitry therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H—ELECTRICITY
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- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/20—Arrangements for obtaining desired frequency or directional characteristics
- H04R1/22—Arrangements for obtaining desired frequency or directional characteristics for obtaining desired frequency characteristic only
- H04R1/28—Transducer mountings or enclosures modified by provision of mechanical or acoustic impedances, e.g. resonator, damping means
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- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
Abstract
MEMS麦克风组件中的开口腔基板及其制造方法。一种声学装置包括基板。在所述基板上布置有微机电系统MEMS器件。所述MEMS器件在所述MEMS器件和所述基板之间形成后容积。在所述基板上布置集成电路。在所述基板上布置盖并且所述盖包括端口。所述盖形成腔体,所述MEMS器件和集成电路被布置在所述腔体内。盖、基板、MEMS器件和集成电路形成前容积。在所述腔体内布置填充材料以减小在没有所述填充材料时会存在的所述前容积的量。
Description
技术领域
本申请涉及微机电麦克风,并且更具体地涉及改进这些器件的性能特征。
背景技术
微机电系统(MEMS)器件举两个示例包括麦克风和扬声器。在MEMS麦克风的情况下,声音能量通过声音端口进入并振动膜片,这一动作产生在膜片和邻近膜片放置的背板之间电势(电压)上的相应变化。该电压代表了已经接收的声音能量。通常,该电压接着被传输到电路(例如,诸如专用集成电路(ASIC)这样的集成电路)。该信号的进一步处理可以在该电路上执行。例如,可在该集成电路上执行该电压信号的放大或滤波功能。
通常期望拥有这样的麦克风,其在尽可能宽的频率范围内具有尽可能线性的响应。一般来说,线性程度越高,麦克风的性能越好。由于各种因素,MEMS麦克风的响应曲线上存在谐振峰值。考虑到在以前的系统中使用的大小、形状和制造过程,以前的方法在避免谐振峰值的影响方面一直是非常困难的。
由于这些缺点,以前的方法还没有充分解决上述问题,并且增加了用户对这些以前的方法的不满。
附图说明
为了更加完整地理解本申请,应当参考以下详细描述及附图,其中:
图1包括了根据本发明各种实施方式的麦克风组件的侧剖视图;
图2包括了根据本发明各种实施方式的图1的麦克风组件去掉盖子的俯视图。
图3包括了根据本发明各种实施方式的构造MEMS麦克风组件的处理的流程图。
图4示出了根据本发明各种实施方式的本文提出的麦克风组件所获得的优点的图表。
本领域技术人员将认识到图中的元件是为了简明和清楚的目的而例示的。还将认识到,虽然以特定的出现顺序描述或叙述某些操作和/或步骤进行,然而本领域技术人员应当理解并不真正要求有关顺序的这一特性。还应当理解,本文使用的术语和表达具有通常的含义,除了提出特定含义的地方之外,其含义与这些术语和表达在其相应的调查和研究领域所具有的含义相一致。
具体实施方式
本方法减小前容积以最小化该封装的声学效果。就这些而言,开口腔基板(如,印刷电路板(PCB))被制作为在板的顶面上(IC和MEMS被放置的腔体的顶架上或者底部上)不具有(或具有)阻焊层,从而使得该板能够在例如PCB供应商处承受附加的处理。由于经由使用固态过孔将到IC的焊线焊盘制作在电镀的通孔的顶部,因此不需要阻焊层;从而允许使得焊线直接到过孔或者到电镀的通孔和/或固态过孔周围的捕捉焊盘。该开口腔基板可以足够大从而使得MEMS器件和集成电路都可以放置其内,并接着在腔体内滴涂环氧树脂以“填满”该封装并减小前容积。在开口腔基板PCB的顶表面或上架可焊接一盖子(如,金属盖或印刷电路板(PCB)盖),或者在该顶表面附加一网盖(声学过滤材料)。
现在参考图1和图2,描述了具有改进性能的麦克风组件的一个示例。麦克风组件100包括微机电(MEMS)器件104和集成电路102。所述MEMS器件104和集成电路102被布置于基板106上。如本领域技术人员所知,基板106由导电材料和绝缘材料的多个交替层构成。导电焊盘108和110在该基板的顶表面上形成电接触点,并延伸到该基板的某些导电层。焊线112、114在集成电路102与导电焊盘108和110之间延伸。可选的,可使用陶瓷基板。
腔体墙116形成于基板106的顶表面上。在腔体墙的上面放置了一盖子118。通过盖子118延伸出一端口120。
如本领域技术人员所知,MEMS器件102包括膜片136和背板134。通过端口120接收的声音能量移动该膜片136,并且随着膜片136的移动,由MEMS器件104生成代表接收信号的电压。该电压经由焊线122和124被传输到集成电路102。集成电路102可以是任何类型的集成电路,但是在某些示例中执行放大和去除噪声的功能。一旦被集成电路102处理,经处理的信号通过焊线112和114被发送出集成电路102而到达导电焊盘108和110,接着通过基板106内的导电层/轨迹,并且接着到达基板106的底部表面111,在这里用户可以进行电气连接。例如,麦克风组件100可被用于个人电脑或蜂窝电话中,这些系统中的其他电子器件可耦合到麦克风100。
如图所示,墙116与基板106形成腔体126,MEMS器件104和集成电路102布置于腔体126内。在盖子和MEMS器件104之间形成前容积130。在所述MEMS器件104的相对侧上形成后容积132。
应当认识到,图1和图2的系统可以是“单片”系统或“两片”系统。也就是说,墙116可以与基板106整体地形成,或者独立于基板而形成(接着连接到基板)。
填充材料128被置于(如,滴涂、喷射等)腔体126内。所述填充材料128可以是可固化粘合剂,以保护集成电路和连接线不受光照并减小前容积。填充材料的其它示例是可行的。在该示例中,填充材料128通常与集成电路102和MEMS器件104的上表面齐平(尽管没有覆盖MEMS器件104的顶表面而可能是覆盖了集成电路102的顶表面)。有利地,该填充材料128减小了前容积130,并且这对于麦克风132的操作是有利的。
现在参照图3,描述了用于构造图1、图2的器件的方法的一个示例。在步骤302,接收印刷电路板(PCB)(例如,六层或更多层的开口腔PCB)或基板。在步骤304,在PCB上放置MEMS器件和集成电路(例如,专用集成电路(ASIC))。MEMS和ASIC的连接采用芯片粘接环氧树脂(die attach epoxy)、导电性环氧树脂或其它材料制成。在MEMS和ASIC之间以及从ASIC到PCB附接有焊线。
在步骤306,腔体106(PCB和墙之间)被可固化粘合剂所填充。在步骤308,粘合剂被固化。在步骤310,使用环氧树脂或焊料连接盖子(如,金属盖)。所述盖子优选地是平的,但也可以具有一些弯曲。
现在参照图4,描述了展示采用本发明的方法的有益效果的图的一个示例。该图的x轴示出了频率,y轴示出了麦克风的灵敏度响应。在该图上示出了第一绘图402、第二绘图404、第三绘图406和第四绘图408。一般来讲,绘图402、404、406和408中的每一个都是特定前容积的绘图。绘图408的前容积比绘图406的小,绘图406的前容积比绘图404的小,绘图404的前腔比绘图402的小。
可以看出,随着前容积减小,峰值移到右边并且在一更大的频率范围内获得线性响应曲线。这是有利的,因为线性度越好,麦克风的性能越好,并且这是在一个更大的频率范围内实现的。
本文描述了本发明的优选实施方式,包括发明者已知的用于实施本发明的最佳模式。应当理解的是,这些描述的实施方式仅仅是示例,其不应当被认为是限制本发明的范围。
本申请要求于2013年6月18日提交的题为“Open Cavity Substrate in MEMSMicrophone Assembly and Method of Manufacturing the Same”的美国临时申请第61836370号的优先权,在此通过引用将其全部内容结合至本申请中。
Claims (9)
1.一种声学装置,所述声学装置包括:
基板;
布置在所述基板上的微机电系统MEMS器件,所述MEMS器件在所述MEMS器件和所述基板之间形成后容积;
布置在所述基板上的集成电路;
布置在所述基板上的盖,所述盖具有端口,所述盖形成腔体,所述MEMS器件和所述集成电路被布置在所述腔体内;
其中,所述盖、所述基板、所述MEMS器件和所述集成电路形成前容积;
其中,在所述腔体内布置填充材料以减小在没有所述填充材料时会存在的所述前容积的量。
2.根据权利要求1所述的声学装置,其中所述填充材料被布置为使得其顶表面与所述MEMS器件的上表面基本齐平。
3.根据权利要求1所述的声学装置,其中所述填充材料被布置为使得其顶表面与所述集成电路的上表面基本齐平。
4.根据权利要求1所述的声学装置,其中所述填充材料包括环氧树脂。
5.根据权利要求1所述的声学装置,其中所述基板是印刷电路板。
6.根据权利要求1所述的声学装置,其中所述盖包括单片。
7.根据权利要求1所述的声学装置,其中所述盖包括墙和盖子。
8.根据权利要求7所述的声学装置,其中所述盖子包括金属。
9.根据权利要求1所述的声学装置,其中所述填充材料被布置为使得其顶表面在所述MEMS器件的上表面之上。
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US201361836370P | 2013-06-18 | 2013-06-18 | |
US61/836,370 | 2013-06-18 |
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Cited By (3)
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CN106340507A (zh) * | 2015-07-10 | 2017-01-18 | 美律电子(深圳)有限公司 | 微机电系统感测芯片封装 |
CN107399712A (zh) * | 2016-05-20 | 2017-11-28 | 无锡天芯互联科技有限公司 | 一种系统级封装的压力传感器结构和制作方法 |
CN113811747A (zh) * | 2019-03-22 | 2021-12-17 | 挪威商声熙贝尔公司 | 光学麦克风组合件 |
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CN110710225B (zh) | 2017-05-25 | 2021-05-11 | 美商楼氏电子有限公司 | 麦克风装置和制造麦克风装置的方法 |
DE112018004658T5 (de) * | 2017-09-12 | 2020-06-10 | Knowles Electronics, Llc | Mikrofon-Paket |
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US7434305B2 (en) * | 2000-11-28 | 2008-10-14 | Knowles Electronics, Llc. | Method of manufacturing a microphone |
US20090134481A1 (en) * | 2007-11-28 | 2009-05-28 | Analog Devices, Inc. | Molded Sensor Package and Assembly Method |
US8325951B2 (en) * | 2009-01-20 | 2012-12-04 | General Mems Corporation | Miniature MEMS condenser microphone packages and fabrication method thereof |
US7790492B1 (en) * | 2009-06-13 | 2010-09-07 | Mwm Acoustics, Llc | Method for fabricating a transducer package with the transducer die unsupported by a substrate |
US8577063B2 (en) * | 2010-02-18 | 2013-11-05 | Analog Devices, Inc. | Packages and methods for packaging MEMS microphone devices |
US9108840B2 (en) * | 2010-12-30 | 2015-08-18 | Goertek Inc. | MEMS microphone and method for packaging the same |
US20130161702A1 (en) * | 2011-12-25 | 2013-06-27 | Kun-Lung Chen | Integrated mems device |
US20140210019A1 (en) * | 2013-01-30 | 2014-07-31 | Invensense, Inc. | Low-cost package for integrated mems sensors |
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2014
- 2014-06-05 US US14/297,155 patent/US20140367810A1/en not_active Abandoned
- 2014-06-17 CN CN201410354072.6A patent/CN104244154A/zh active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106340507A (zh) * | 2015-07-10 | 2017-01-18 | 美律电子(深圳)有限公司 | 微机电系统感测芯片封装 |
CN106340507B (zh) * | 2015-07-10 | 2019-04-19 | 美律电子(深圳)有限公司 | 微机电系统感测芯片封装 |
CN107399712A (zh) * | 2016-05-20 | 2017-11-28 | 无锡天芯互联科技有限公司 | 一种系统级封装的压力传感器结构和制作方法 |
CN113811747A (zh) * | 2019-03-22 | 2021-12-17 | 挪威商声熙贝尔公司 | 光学麦克风组合件 |
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