CN104241340B - 一种沟槽mos单元及其制备方法 - Google Patents
一种沟槽mos单元及其制备方法 Download PDFInfo
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- CN104241340B CN104241340B CN201410536089.3A CN201410536089A CN104241340B CN 104241340 B CN104241340 B CN 104241340B CN 201410536089 A CN201410536089 A CN 201410536089A CN 104241340 B CN104241340 B CN 104241340B
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- ions
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- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 150000002500 ions Chemical class 0.000 claims abstract description 102
- 238000005530 etching Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 230000000694 effects Effects 0.000 abstract description 7
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 6
- 239000011574 phosphorus Substances 0.000 abstract description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052785 arsenic Inorganic materials 0.000 abstract description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052796 boron Inorganic materials 0.000 abstract description 5
- LIQLLTGUOSHGKY-UHFFFAOYSA-N [B].[F] Chemical class [B].[F] LIQLLTGUOSHGKY-UHFFFAOYSA-N 0.000 abstract description 4
- 238000000407 epitaxy Methods 0.000 description 43
- 239000000758 substrate Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000008093 supporting effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000005554 pickling Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 phosphorus ion Chemical class 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410536089.3A CN104241340B (zh) | 2014-10-11 | 2014-10-11 | 一种沟槽mos单元及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410536089.3A CN104241340B (zh) | 2014-10-11 | 2014-10-11 | 一种沟槽mos单元及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104241340A CN104241340A (zh) | 2014-12-24 |
CN104241340B true CN104241340B (zh) | 2019-12-10 |
Family
ID=52229106
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201410536089.3A Active CN104241340B (zh) | 2014-10-11 | 2014-10-11 | 一种沟槽mos单元及其制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN104241340B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102097378A (zh) * | 2009-12-10 | 2011-06-15 | 力士科技股份有限公司 | 一种沟槽金属氧化物半导体场效应管的制造方法 |
CN102130005A (zh) * | 2010-01-20 | 2011-07-20 | 上海华虹Nec电子有限公司 | 沟槽侧壁为(110)面的沟槽pmos的制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2917922B2 (ja) * | 1996-07-15 | 1999-07-12 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP4114390B2 (ja) * | 2002-04-23 | 2008-07-09 | 株式会社デンソー | 半導体装置及びその製造方法 |
KR100689673B1 (ko) * | 2004-05-10 | 2007-03-09 | 주식회사 하이닉스반도체 | 반도체소자의 불균일 이온주입 방법 |
JP2007013058A (ja) * | 2005-07-04 | 2007-01-18 | Toshiba Corp | 半導体装置 |
US8022471B2 (en) * | 2008-12-31 | 2011-09-20 | Force-Mos Technology Corp. | Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures |
-
2014
- 2014-10-11 CN CN201410536089.3A patent/CN104241340B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102097378A (zh) * | 2009-12-10 | 2011-06-15 | 力士科技股份有限公司 | 一种沟槽金属氧化物半导体场效应管的制造方法 |
CN102130005A (zh) * | 2010-01-20 | 2011-07-20 | 上海华虹Nec电子有限公司 | 沟槽侧壁为(110)面的沟槽pmos的制备方法 |
Also Published As
Publication number | Publication date |
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CN104241340A (zh) | 2014-12-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Deng Wenjie Inventor before: Wang Jin |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20191119 Address after: 518000, Shenzhen, Guangdong, Nanshan District province Taoyuan street, Tian Lao industrial area A Tian Lao building 1115 Applicant after: VANGUARD SEMICONDUCTOR CO.,LTD. Address before: 518000 Guangdong city of Shenzhen province Futian District Fuhua Road No. 6 Building 1403 business tax Applicant before: Wang Jin |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 518000 1301, building 3, Chongwen Park, Nanshan Zhiyuan, No. 3370 Liuxian Avenue, Fuguang community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong Patentee after: Shenzhen Weizhao Semiconductor Co.,Ltd. Address before: 518000 1115 Tianliao building, Tianliao Industrial Zone A, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Patentee before: VANGUARD SEMICONDUCTOR CO.,LTD. |