CN104241149B - A kind of welding method of semiconductor chip - Google Patents
A kind of welding method of semiconductor chip Download PDFInfo
- Publication number
- CN104241149B CN104241149B CN201310245796.2A CN201310245796A CN104241149B CN 104241149 B CN104241149 B CN 104241149B CN 201310245796 A CN201310245796 A CN 201310245796A CN 104241149 B CN104241149 B CN 104241149B
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- CN
- China
- Prior art keywords
- semiconductor chip
- paste
- soldering paste
- coated
- soldering
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8334—Bonding interfaces of the layer connector
- H01L2224/83359—Material
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
The invention discloses the welding method of a kind of semiconductor chip, have step in detail below: take out semiconductor chip, the front and back at semiconductor chip is coated with and is covered with soldering paste；The semiconductor chip of dual coating soldering paste is put into high temperature welding furnace, makes semiconductor chip surface form weld layer；Use scribing machine that the front and back of semiconductor chip is delineated photoetching groove and form required figure；The semiconductor chip that front and back is coated with soldering paste contacts with copper-base, forms semi-conductor discrete device through high-temperature soldering technique.After using the technique of the present invention, the front and back of semiconductor chip is coated with and is covered with soldering paste, replaces the plating metal on surface of conventional semiconductor chip, and the surface making semiconductor chip is the most oxidizable, it is ensured that the compactness on its surface.
Description
Technical field
The present invention relates to the welding method of a kind of semiconductor chip.
Background technology
In the past, after semiconductor chip surface plating through scribing, shelve, after the technique such as welding, surface portion oxygen can be caused
Changing, even surface soundness also has certain impact.
Summary of the invention
In order to overcome defect of the prior art, the present invention provides the welding method of a kind of semiconductor chip, makes quasiconductor
Chip is not likely to produce cavity when welding, improves the performance of product.
The technical solution adopted for the present invention to solve the technical problems is: the welding method of a kind of semiconductor chip, has
Step in detail below:
A: take out semiconductor chip, the front and back at semiconductor chip is coated with and is covered with soldering paste；
B: the semiconductor chip of dual coating soldering paste is put into high temperature welding furnace, makes semiconductor chip surface form welding
Layer；
C: use scribing machine that the front and back of semiconductor chip is delineated photoetching groove and form required figure；
D: the semiconductor chip that front and back is coated with soldering paste contacts with copper-base, forms half through high-temperature soldering technique
Conductor discrete device.
Further, in described step a, the method to semiconductor chip coating soldering paste is:
1., by semiconductor chip face up and put into printer fixed platform, cover steel mesh, and alignment patterns, use print
Brush machine by paste application on the front of semiconductor chip；
2., then take out semiconductor chip, the semiconductor chip back side is put into upward printer fixed platform, cover steel
Net, and alignment patterns, use printer by paste application on the back side of semiconductor chip.
Further, semiconductor chip is put into infrared-ray oven baking after 1. terminating by described step, treats semiconductor core
Take out after the paste hardening in sheet front；
Semiconductor chip is put into infrared-ray oven baking after 2. terminating by described step, treats the weldering at the semiconductor chip back side
Take out after cream hardening.
The beneficial effect that the present invention is brought: after using the technique of the present invention, the front and back coating of semiconductor chip
Upper soldering paste, replaces the plating metal on surface of conventional semiconductor chip, and the surface making semiconductor chip is the most oxidizable, it is ensured that its surface
Compactness.
Soldering paste on semiconductor chip after infrared-ray oven, paste hardening, it can be ensured that sky will not be produced after welding
Hole, substantially increases properties of product.
Accompanying drawing explanation
Fig. 1 is the structural representation of semiconductor chip；
Fig. 2 is the profile of the semiconductor chip after welding procedure.
Wherein, 1, semiconductor chip, 2, light fluting, 3, weld layer.
Detailed description of the invention
As shown in Fig. 1 Fig. 2,
Embodiment one: the welding method of a kind of semiconductor chip, has a step in detail below:
A: take out semiconductor chip 1, the front and back at semiconductor chip 1 is coated with and is covered with soldering paste；
B: the semiconductor chip 1 of dual coating soldering paste is put into high temperature welding furnace, makes semiconductor chip 1 surface form welding
Layer 3；
C: use scribing machine that the front and back of semiconductor chip 1 is delineated light fluting 2 and form required figure；
D: the semiconductor chip 1 that front and back is coated with soldering paste contacts with copper-base, is formed through high-temperature soldering technique
Semi-conductor discrete device.
Embodiment two: the welding method of a kind of semiconductor chip, has a step in detail below:
A: take out semiconductor chip 1, the front and back at semiconductor chip 1 is coated with and is covered with soldering paste；Semiconductor chip 1 is coated with
The method covering soldering paste is:
1., by semiconductor chip 1 face up and put into printer fixed platform, cover steel mesh, and alignment patterns, use print
Brush machine by paste application on the front of semiconductor chip 1；
2., then take out semiconductor chip 1, semiconductor chip 1 back side is put into upward printer fixed platform, cover steel
Net, and alignment patterns, use printer by paste application on the back side of semiconductor chip 1；
Convenient of course for practical operation, when to semiconductor chip 1 backside coating soldering paste, can not be by semiconductor chip
1 takes out, but directly overturns on printer for clamping the fixture of semiconductor chip 1, so operates just enhanced convenience.
And ensure the quality of follow-up weld layer 3, after 1. step terminates, semiconductor chip 1 can be put into infrared-ray oven
Baking, takes out after the paste hardening in semiconductor chip 1 front, and puts into red by semiconductor chip 1 after 2. step terminates
Outside line baking oven toasts, and takes out after the paste hardening at semiconductor chip 1 back side.So, semiconductor chip 1 is entering into height
Before temperature soldering furnace, its surface is stone, is unlikely to deform abrasion.
B: the semiconductor chip 1 of dual coating soldering paste is put into high temperature welding furnace, makes semiconductor chip 1 surface form welding
Layer 3.
C: use scribing machine that the front and back of semiconductor chip 1 is delineated light fluting 2 and form required figure.
D: the semiconductor chip 1 that front and back is coated with soldering paste contacts with copper-base, is formed through high-temperature soldering technique
Semi-conductor discrete device.
After using the technique of the present invention, the front and back of semiconductor chip 1 is coated with and is covered with soldering paste, replaces conventional semiconductor core
The plating metal on surface of sheet 1, the surface making semiconductor chip 1 is the most oxidizable, it is ensured that the compactness on its surface.
Soldering paste on semiconductor chip 1 after infrared-ray oven, paste hardening, it can be ensured that sky will not be produced after welding
Hole, substantially increases properties of product.
Claims (3)
1. a welding method for semiconductor chip, is characterized in that: have a step in detail below:
A: take out semiconductor chip (1), the front and back at semiconductor chip (1) is coated with and is covered with soldering paste；
B: the semiconductor chip (1) of dual coating soldering paste is put into high temperature welding furnace, makes semiconductor chip (1) surface form welding
Layer (3)；
C: use scribing machine that the front and back of semiconductor chip (1) is delineated the figure needed for light fluting (2) is formed；
D: the semiconductor chip (1) that front and back is coated with soldering paste contacts with copper-base, forms half through high-temperature soldering technique
Conductor discrete device.
The welding method of a kind of semiconductor chip the most according to claim 1, is characterized in that: in described step a half-and-half
The method of conductor chip (1) coating soldering paste is:
1., by semiconductor chip (1) face up and put into printer fixed platform, cover steel mesh, and alignment patterns, use printing
Machine by paste application on the front of semiconductor chip (1)；
2., then take out semiconductor chip (1), semiconductor chip (1) back side is put into upward printer fixed platform, cover steel
Net, and alignment patterns, use printer by paste application on the back side of semiconductor chip (1).
The welding method of a kind of semiconductor chip the most according to claim 2, is characterized in that: after 1. described step terminates
Semiconductor chip (1) is put into infrared-ray oven baking, takes out after the paste hardening in semiconductor chip (1) front；
Semiconductor chip (1) is put into infrared-ray oven baking after 2. terminating by described step, treats semiconductor chip (1) back side
Take out after paste hardening.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310245796.2A CN104241149B (en) | 2013-06-18 | 2013-06-18 | A kind of welding method of semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310245796.2A CN104241149B (en) | 2013-06-18 | 2013-06-18 | A kind of welding method of semiconductor chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104241149A CN104241149A (en) | 2014-12-24 |
| CN104241149B true CN104241149B (en) | 2016-12-28 |
Family
ID=52228995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310245796.2A Active CN104241149B (en) | 2013-06-18 | 2013-06-18 | A kind of welding method of semiconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104241149B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200512848A (en) * | 2003-09-26 | 2005-04-01 | Advanced Semiconductor Eng | Transparent packaging in wafer level |
| JP2008112961A (en) * | 2006-10-04 | 2008-05-15 | Rohm Co Ltd | Method for manufacturing semiconductor device, and semiconductor device |
| CN102527676A (en) * | 2011-12-14 | 2012-07-04 | 青岛吉阳新能源有限公司 | Cleaning process method for etching resistant mask slurry |
| CN103325758A (en) * | 2013-05-16 | 2013-09-25 | 华天科技（西安）有限公司 | FCQFN encapsulation part preventing solder balls from collapsing and manufacturing process of FCQFN encapsulation part |
-
2013
- 2013-06-18 CN CN201310245796.2A patent/CN104241149B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200512848A (en) * | 2003-09-26 | 2005-04-01 | Advanced Semiconductor Eng | Transparent packaging in wafer level |
| JP2008112961A (en) * | 2006-10-04 | 2008-05-15 | Rohm Co Ltd | Method for manufacturing semiconductor device, and semiconductor device |
| CN102527676A (en) * | 2011-12-14 | 2012-07-04 | 青岛吉阳新能源有限公司 | Cleaning process method for etching resistant mask slurry |
| CN103325758A (en) * | 2013-05-16 | 2013-09-25 | 华天科技（西安）有限公司 | FCQFN encapsulation part preventing solder balls from collapsing and manufacturing process of FCQFN encapsulation part |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104241149A (en) | 2014-12-24 |
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| CP03 | Change of name, title or address |
Address after: 213022 Changzhou, North New District, Jiangsu Yangtze River Road, No. 19 Patentee after: Changzhou Galaxy century microelectronics Limited by Share Ltd Address before: 213000 Changzhou, North New District, Jiangsu Yangtze River Road, No. 19 Patentee before: Changzhou Galaxy Century Micro-Electronics Co., Ltd. |