CN104241149A - Method for welding semiconductor chip - Google Patents
Method for welding semiconductor chip Download PDFInfo
- Publication number
- CN104241149A CN104241149A CN201310245796.2A CN201310245796A CN104241149A CN 104241149 A CN104241149 A CN 104241149A CN 201310245796 A CN201310245796 A CN 201310245796A CN 104241149 A CN104241149 A CN 104241149A
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- China
- Prior art keywords
- semiconductor chip
- paste
- welding
- coated
- printing machine
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8334—Bonding interfaces of the layer connector
- H01L2224/83359—Material
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
The invention discloses a method for welding a semiconductor chip. The method comprises the following steps that the semiconductor chip is taken out, and the front face and the back face of the semiconductor chip are coated with welding paste; the semiconductor chip with the two faces coated with the welding paste is placed in a high-temperature welding furnace, and a welding layer is formed on the surface of the semiconductor chip; a scribing machine is used for scribing photoetching grooves in the front face and the back face of the semiconductor chip to form needed patterns; the semiconductor chip with the front face and the back face coated with the welding paste is in contact with a copper electrode, and through a high-temperature welding process, a semiconductor discrete device is formed. According to the method for welding the semiconductor chip, the front face and the back face of the semiconductor chip are coated with the welding paste, the original mode that the surface of the semiconductor chip is coated with metal is replaced, the surface of the semiconductor chip can not be oxidized easily, and the compactness of the surface of the semiconductor chip is guaranteed.
Description
Technical field
The present invention relates to a kind of welding method of semiconductor chip.
Background technology
In the past, after semiconductor chip surface plating through scribing, shelve, after the technique such as welding, surface portion can be caused to be oxidized, and even surface soundness also has certain influence.
Summary of the invention
In order to overcome defect of the prior art, the invention provides a kind of welding method of semiconductor chip, making semiconductor chip not easily produce cavity being welded with, improving the performance of product.
The technical solution adopted for the present invention to solve the technical problems is: a kind of welding method of semiconductor chip, has following concrete steps:
A: take out semiconductor chip, is coated with at the front and back of semiconductor chip and is covered with soldering paste;
B: the semiconductor chip of dual coating soldering paste is put into high temperature welding furnace, makes semiconductor chip surface form weld layer;
C: use scribing machine that the front and back of semiconductor chip delineation photoetching groove is formed required figure;
D: semiconductor chip front and back being coated with soldering paste contacts with copper-base, forms semi-conductor discrete device through high-temperature soldering technique.
Further, in described step a to the method for semiconductor chip solder paste application be:
1., by semiconductor chip face up and put into printing machine fixed platform, cover steel mesh, and alignment patterns, use printing machine by paste application on the front of semiconductor chip;
2., then take out semiconductor chip, printing machine fixed platform is put at the semiconductor chip back side upward, cover steel mesh, and alignment patterns, use printing machine by paste application on the back side of semiconductor chip.
Further, after 1. described step terminates, semiconductor chip is put into infrared-ray oven baking, take out after the paste hardening in semiconductor chip front;
After 2. described step terminates, semiconductor chip is put into infrared-ray oven baking, take out after the paste hardening at the semiconductor chip back side.
The beneficial effect that the present invention brings: after adopting technique of the present invention, the front and back of semiconductor chip is coated with and is covered with soldering paste, replaces the plating metal on surface of semiconductor chip in the past, makes the surface of semiconductor chip not oxidizable, guarantee the compactness on its surface.
Soldering paste on semiconductor chip is after infrared-ray oven, and paste hardening, can guarantee can not produce cavity after welding, substantially increase properties of product.
Accompanying drawing explanation
Fig. 1 is the structural representation of semiconductor chip;
Fig. 2 is through the profile of the semiconductor chip after welding procedure.
Wherein, 1, semiconductor chip, 2, photoetching groove, 3, weld layer.
Embodiment
As shown in Fig. 1 Fig. 2,
Embodiment one: a kind of welding method of semiconductor chip, has following concrete steps:
A: take out semiconductor chip 1, is coated with at the front and back of semiconductor chip 1 and is covered with soldering paste;
B: the semiconductor chip 1 of dual coating soldering paste is put into high temperature welding furnace, makes semiconductor chip 1 surface form weld layer 3;
C: use scribing machine that the front and back of semiconductor chip 1 delineation photoetching groove 2 is formed required figure;
D: the semiconductor chip 1 front and back being coated with soldering paste contacts with copper-base, forms semi-conductor discrete device through high-temperature soldering technique.
Embodiment two: a kind of welding method of semiconductor chip, has following concrete steps:
A: take out semiconductor chip 1, is coated with at the front and back of semiconductor chip 1 and is covered with soldering paste; To the method for semiconductor chip 1 solder paste application be:
1., by semiconductor chip 1 face up and put into printing machine fixed platform, cover steel mesh, and alignment patterns, use printing machine by paste application on the front of semiconductor chip 1;
2., then take out semiconductor chip 1, printing machine fixed platform is put at semiconductor chip 1 back side upward, cover steel mesh, and alignment patterns, use printing machine by paste application on the back side of semiconductor chip 1;
Certainly in order to practical operation is convenient, when to semiconductor chip 1 backside coating soldering paste, semiconductor chip 1 can not be taken out, but directly overturn for clamping the fixture of semiconductor chip 1 on printing machine, operation is just more convenient like this.
And ensure the quality of follow-up weld layer 3, after 1. step terminates, semiconductor chip 1 can be put into infrared-ray oven baking, take out after the paste hardening in semiconductor chip 1 front, and semiconductor chip 1 is put into infrared-ray oven baking after 2. step terminates, take out after the paste hardening at semiconductor chip 1 back side.So, semiconductor chip 1 its surface before entering into high temperature welding furnace is stone, not easily formation abrasion.
B: the semiconductor chip 1 of dual coating soldering paste is put into high temperature welding furnace, makes semiconductor chip 1 surface form weld layer 3.
C: use scribing machine that the front and back of semiconductor chip 1 delineation photoetching groove 2 is formed required figure.
D: the semiconductor chip 1 front and back being coated with soldering paste contacts with copper-base, forms semi-conductor discrete device through high-temperature soldering technique.
After adopting technique of the present invention, the front and back of semiconductor chip 1 is coated with and is covered with soldering paste, replaces the plating metal on surface of semiconductor chip 1 in the past, makes the surface of semiconductor chip 1 not oxidizable, guarantee the compactness on its surface.
Soldering paste on semiconductor chip 1 is after infrared-ray oven, and paste hardening, can guarantee can not produce cavity after welding, substantially increase properties of product.
Claims (3)
1. a welding method for semiconductor chip, is characterized in that: have following concrete steps:
A: take out semiconductor chip (1), is coated with at the front and back of semiconductor chip (1) and is covered with soldering paste;
B: the semiconductor chip (1) of dual coating soldering paste is put into high temperature welding furnace, makes semiconductor chip (1) surface form weld layer (3);
C: use scribing machine by the figure needed for the front and back of semiconductor chip (1) delineation photoetching groove (2) formation;
D: the semiconductor chip (1) front and back being coated with soldering paste contacts with copper-base, forms semi-conductor discrete device through high-temperature soldering technique.
2. the welding method of a kind of semiconductor chip according to claim 1, is characterized in that: in described step a to the method for semiconductor chip (1) solder paste application be:
1., by semiconductor chip (1) face up and put into printing machine fixed platform, cover steel mesh, and alignment patterns, use printing machine by paste application on the front of semiconductor chip (1);
2. semiconductor chip (1), is then taken out, printing machine fixed platform is put at semiconductor chip (1) back side upward, cover steel mesh, and alignment patterns, use printing machine by paste application on the back side of semiconductor chip (1).
3. the welding method of a kind of semiconductor chip according to claim 2, it is characterized in that: after 1. described step terminates, semiconductor chip (1) is put into infrared-ray oven baking, take out after the paste hardening in semiconductor chip (1) front;
After 2. described step terminates, semiconductor chip (1) is put into infrared-ray oven baking, take out after the paste hardening at semiconductor chip (1) back side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310245796.2A CN104241149B (en) | 2013-06-18 | 2013-06-18 | A kind of welding method of semiconductor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310245796.2A CN104241149B (en) | 2013-06-18 | 2013-06-18 | A kind of welding method of semiconductor chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104241149A true CN104241149A (en) | 2014-12-24 |
| CN104241149B CN104241149B (en) | 2016-12-28 |
Family
ID=52228995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310245796.2A Active CN104241149B (en) | 2013-06-18 | 2013-06-18 | A kind of welding method of semiconductor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104241149B (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI226090B (en) * | 2003-09-26 | 2005-01-01 | Advanced Semiconductor Eng | Transparent packaging in wafer level |
| JP5259978B2 (en) * | 2006-10-04 | 2013-08-07 | ローム株式会社 | Manufacturing method of semiconductor device |
| CN102527676B (en) * | 2011-12-14 | 2013-11-06 | 青岛吉阳新能源有限公司 | Cleaning process method for etching resistant mask slurry |
| CN103325758B (en) * | 2013-05-16 | 2018-04-06 | 华天科技（西安）有限公司 | The FCQFN packaging parts and its manufacture craft that a kind of anti-tin ball collapses |
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2013
- 2013-06-18 CN CN201310245796.2A patent/CN104241149B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104241149B (en) | 2016-12-28 |
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| C14 | Grant of patent or utility model | ||
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Address after: 213022 Changzhou, North New District, Jiangsu Yangtze River Road, No. 19 Patentee after: Changzhou Galaxy century microelectronics Limited by Share Ltd Address before: 213000 Changzhou, North New District, Jiangsu Yangtze River Road, No. 19 Patentee before: Changzhou Galaxy Century Micro-Electronics Co., Ltd. |