CN104233191A - Heating chamber and plasma processing apparatus - Google Patents
Heating chamber and plasma processing apparatus Download PDFInfo
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- CN104233191A CN104233191A CN201310228234.7A CN201310228234A CN104233191A CN 104233191 A CN104233191 A CN 104233191A CN 201310228234 A CN201310228234 A CN 201310228234A CN 104233191 A CN104233191 A CN 104233191A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a heating chamber and a plasma processing apparatus. The top of the heating chamber is provided with a heating unit for irradiating heat energy to the interior of the heating chamber in a heat radiation manner; the inner circumference wall of the heating chamber is provided with a piece-transferring opening for moving a to-be-processed workpiece in and out of the heating chamber; and the heating chamber comprises a bearing device. The bearing device comprises a lifting unit and ejection pin devices; the ejection pin devices are disposed in the heating chamber and are used for supporting the to-be-processed workpiece; the lifting unit is used for driving the ejection pin devices to rise or descend, so as to drive the to-be-processed workpiece on the ejection pin devices to rise to a preset process position above the piece-transferring opening to carry out the process or descend to a preset loading and unloading position corresponding to the piece-transferring opening to carry out loading and unloading operations. The heating chamber provided by the invention can heat the to-be-processed workpiece uniformly, and thus temperature uniformity of the to-be-processed workpiece is increased and uniformity of the process can be increased.
Description
Technical field
The present invention relates to microelectronic processing technique field, particularly, relate to a kind of heated chamber and plasma processing device.
Background technology
Physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) technology is the processing technology that microelectronic is conventional, e.g., for the copper interconnection layer in working integrated circuit.Make copper interconnection layer mainly comprise degas, pre-washing, Ta (N) deposition and the step such as Cu deposition, wherein, step of degassing is water vapour on the workpieces to be machined such as removal substrate and other easy volatile impurity.When implementing to degas step, substrate is not only needed to quickly heat up to about 350 DEG C, but also to ensure that substrate is heated evenly, otherwise the volatile Impurity removal that produces in the subregion of substrate can be caused unclean, thus bring detrimentally affect to subsequent technique, and serious substrate temperature inequality even also can cause substrate cracked.
Fig. 1 is the structural representation of existing PVD equipment.Refer to Fig. 1, it is the circular chamber 1 that degass that PVD equipment comprises internal perisporium, multiple support pin 2 (being generally 3) is had at chamber 1 internal fixtion that degass, in order to carrying substrates 3, and, the internal perisporium of chamber 1 that degass is provided with and passes sheet mouth 1a, and for opening or close family of power and influence's (not shown) of this biography sheet mouth 1a, when loading and unloading substrate 3, substrate to be processed is sent to the top of the chamber 1 inner support pin 2 that degass by mechanical manipulator via biography sheet mouth 1a, and the substrate processed is shifted out the chamber 1 that degass by the top of self-supporting pin 2.And, upper body cover 5 is provided with at the top of the chamber 1 that degass, and in the internal space of upper body cover 5 and degas between chamber 1 and be provided with quartz window 7, the internal space of upper body cover 5 and the chamber 1 that degass are isolated formation two independently enclosed space by this quartz window 7, and when technique, the internal space of upper body cover 5 is atmospheric environment, and the chamber 1 that degass is for vacuum environment.In upper body cover 5, be provided with multiple heating bulb 6, its substrate 3 being opposite to the top of support pin 2 by radiation mode through quartz window 7 is heated.
Inevitably there is following problem in actual applications in above-mentioned PVD equipment, that is: sheet mouth 1a is passed owing to being provided with on the internal perisporium of chamber 1 that degass, this destroys the symmetry of the circular internal perisporium of the chamber 1 that degass, cause this internal perisporium cannot reflect the heat given off by heating bulb 6 equably, thus cause the temperature distributing disproportionation degassed in chamber 1 even, and, be difficult to reflex on substrate 3 because heating bulb 6 is radiated to the most of heat passing sheet mouth 1a place, the heat that the heat that this region that substrate 3 can be caused to correspond to biography sheet mouth 1a obtains and the region of other positions corresponding to internal perisporium obtain there are differences, thus cause the non-uniform temperature of substrate 3, and then reduce the homogeneity of technique.
Summary of the invention
The present invention is intended at least to solve one of technical problem existed in prior art, propose a kind of heated chamber and plasma processing device, it can heat workpiece to be machined equably, thus can improve the temperature homogeneity of workpiece to be machined, and then can improve the homogeneity of technique.
There is provided a kind of heated chamber for realizing object of the present invention, its top is provided with heating unit, in order to adopt thermal-radiating mode towards the internal radiation heat of described heated chamber; The internal perisporium of described heated chamber is provided with and passes sheet mouth, with moving into for workpiece to be machined or shifting out described heated chamber, described heated chamber also comprises bogey, described bogey comprises lifting unit and push pin device, wherein: described push pin device is positioned at described heated chamber, in order to support workpiece to be machined; Described lifting unit is for driving described push pin device to rise or declining, to drive the workpiece to be machined be placed in described push pin device to rise to, technique is carried out in the technique position be positioned at above described biography sheet mouth, or the handling position dropped to corresponding to described biography sheet mouth is loaded and unloaded.
Wherein, described lifting unit comprises transmission component and rotary driving source, wherein: described rotary driving source is used for providing rotary power to described transmission component; Described transmission component is used for the rotary power provided by described rotary driving source to be converted to lifting translational motion, and passes to described push pin device, rises or decline to make described push pin device.
Wherein, described transmission component comprises screw-nut assembly or rack and pinion assembly.
Wherein, described lifting unit, comprising: linear drives source, rises or decline for driving described push pin device.
Wherein, described linear drives source comprises straight line cylinder, linear electric motors or linear hydraulic cylinder.
Wherein, described push pin device, comprising: ring support and at least three thimbles, wherein: described at least three thimbles, in order to support workpiece to be machined; Described ring support is horizontally set in described heated chamber, and the below of at least three thimbles described in being positioned at, and the bottom of described at least three thimbles is fixed on described ring support, and be uniformly distributed along the circumference of described ring support; Described ring support is connected with described lifting unit, and under the driving of described lifting unit, described in described ring support drives, at least three thimbles rise simultaneously or decline.
Wherein, the diapire of described heated chamber is provided with through hole, and, described lifting unit comprises connecting rod, wherein: the top of described connecting rod is fixedly connected with described push pin device, the bottom of described connecting rod through described through hole, and extends to the outside of described heated chamber, and is fixedly connected with described transmission component.
Wherein, on described connecting rod, cover is shaped with corrugated tube, the top of described corrugated tube and the diapire of described heated chamber are tightly connected, and bottom and the described connecting rod of described corrugated tube are tightly connected, to form the seal cavity be connected with described through hole in the inside of described corrugated tube.
Wherein, the height of described heated chamber in the vertical direction is 155 ~ 165mm.
Wherein, described lifting unit also comprises bracing frame, and described line slideway is arranged on support frame as described above, and support frame as described above is fixed on the bottom of described heated chamber, in order to support described transmission component and rotary driving source respectively.
As another technical scheme, the present invention also provides a kind of plasma processing device, comprises heated chamber and mechanical manipulator, and wherein, this heated chamber have employed above-mentioned heated chamber provided by the invention.
The present invention has following beneficial effect:
Heated chamber provided by the invention, it rises by driving the push pin device for supporting workpiece to be machined by lifting unit or declines, the workpiece to be machined be placed in this push pin device can be driven to rise to the default technique position passed above sheet mouth that is positioned at and to carry out technique, or drop to the default handling position corresponding to biography sheet mouth.Because the internal perisporium of the heated chamber corresponding to process station place is symmetrical structure, it can reflect the heat given off by heating unit equably when heating, thus technique is carried out by workpiece to be machined being risen to above-mentioned technique position, the detrimentally affect that biography sheet mouth produces the temperature of workpiece to be machined can be avoided, and make the homogeneous temperature of workpiece to be machined, thus the homogeneity of technique can be improved.In addition, by workpiece to be machined being dropped to above-mentioned handling position, the handling to workpiece to be machined can be realized.
Plasma processing device provided by the invention, it, by adopting heated chamber provided by the invention, can heat workpiece to be machined equably, thus can improve the temperature homogeneity of workpiece to be machined, and then can improve the homogeneity of technique.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing PVD equipment;
Fig. 2 A is the sectional view of heated chamber provided by the invention when workpiece to be machined is in loading position;
Fig. 2 B is the sectional view of heated chamber provided by the invention when workpiece to be machined is in process station; And
Fig. 3 is the vertical view of the ring support of heated chamber provided by the invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, heated chamber provided by the invention and plasma processing device are described in detail.
Fig. 2 A is the sectional view of heated chamber provided by the invention when workpiece to be machined is in loading position.Fig. 2 B is the sectional view of heated chamber provided by the invention when workpiece to be machined is in process station.Fig. 3 is the vertical view of the ring support of heated chamber provided by the invention.See also Fig. 2 A, 2B and Fig. 3, in the present embodiment, heated chamber 20 top is provided with heating unit, this heating unit comprises the upper body cover 22 at the top being arranged on heated chamber 20, and be positioned at the heating lamp 23 of upper body cover 22, wherein, between the internal space 221 and heated chamber 20 of upper body cover 22, be provided with quartz window 39, the internal space 221 of upper body cover 22 and heated chamber 20 are isolated formation two independently enclosed space by quartz window 39; And when technique, the internal space 221 of upper body cover 22 is atmospheric environment, and heated chamber 20 is vacuum environment.Heating lamp 23 is for adopting thermal-radiating mode towards the internal radiation heat of heated chamber 20, and heating lamp 23 can be the infrared heat lamp of tungsten filament or halogen etc., and the structure of heating lamp 23 can be the fluorescent tube of bulb or arbitrary shape.And, the internal perisporium of heated chamber 20 is provided with and passes sheet mouth 201, move into or shift out heated chamber 20 with for workpiece to be machined 21.
Heated chamber 20 also comprises bogey, and this bogey comprises lifting unit and push pin device, and wherein, push pin device is positioned at heated chamber 20, in order to support workpiece to be machined; Lifting unit, for driving push pin device to rise or declining, rises to the technique position be positioned at above biography sheet mouth 201 and carry out technique, or the handling position dropped to corresponding to passing sheet mouth 201 is loaded and unloaded to drive the workpiece to be machined 21 be placed in this push pin device.
Below the concrete structure of bogey is described in detail.Particularly, push pin device comprises three thimbles 24 and ring support 25, and wherein, three thimbles 24 are for supporting workpiece to be machined 21, easy understand, and the top of three thimbles 24 needs mutually concordant, to make workpiece to be machined 21 can horizontal positioned.Ring support 25 is horizontally set in heated chamber 20, and is positioned at the below of three thimbles 24, and the bottom of three thimbles 24 is fixed on ring support 25, and annularly the circumference of support 25 is uniformly distributed, as shown in Figure 3.
Lifting unit comprises transmission component 29 and rotary driving source 30, and wherein, rotary driving source 30 is for providing rotary power to transmission component 29, and rotary driving source 30 can be rotating machine or rotating liquid press pump etc.; Transmission component 29 is for being converted to lifting translational motion by the rotary power provided by rotary driving source 30, and pass to push pin device, rise to make this push pin device or decline, transmission component 29 can adopt the assembly that rotary power can be converted to lifting translational motion of such as screw-nut assembly or rack and pinion assembly etc.
In the present embodiment, following mode of connection connection for transmission assembly 29 and push pin device is adopted.Particularly, lifting unit also comprises connecting rod 26 and bracing frame 28, and wherein, bracing frame 28 is fixed on the bottom of heated chamber 20, in order to support transmission component 29 and rotary driving source 30 respectively.And be provided with through hole 202 on the diapire of heated chamber 20, and the top of connecting rod 26 is fixedly connected with ring support 25, the bottom of connecting rod 26 through through hole 202, and extends to the outside of heated chamber 20, and is fixedly connected with transmission component 29.Under the driving of rotary driving source 30, the rotary power provided by rotary driving source 30 is converted to lifting translational motion by transmission component 29, and drivening rod 26, ring support 25 and three thimbles 24 rise or decline successively simultaneously, thus the workpiece to be machined 21 be placed on thimble 24 can be driven to rise to the default technique position (as shown in Figure 2 B the position of workpiece to be machined 21) be positioned at above biography sheet mouth 201, or drop to the default handling position (as shown in Figure 2 A the position of workpiece to be machined 21) corresponding to biography sheet mouth 201.
Preferably, on connecting rod 26, cover is shaped with corrugated tube 27, the top of corrugated tube 27 and the diapire of heated chamber 20 are tightly connected, bottom and the connecting rod 26 of corrugated tube 27 are tightly connected, to form the seal cavity be connected with through hole 202 in the inside of corrugated tube 27, thus heated chamber 20 is enable to keep vacuum state when heating.
Because the internal perisporium being looped around the heated chamber 20 around above-mentioned technique position is symmetrical structure, it can reflect the heat given off by heating lamp 23 equably when heating, thus technique is carried out by workpiece to be machined 21 is risen to above-mentioned technique position, the detrimentally affect that the temperature passing sheet mouth 201 pairs of workpieces to be machined 21 produces can be avoided, and make the homogeneous temperature of workpiece to be machined 21, thus the homogeneity of technique can be improved.In addition, by workpiece to be machined 21 is dropped to above-mentioned handling position, the handling to workpiece to be machined 21 can be realized.
Easy understand, above-mentioned technique position determines the vertical spacing between workpiece to be machined 21 and heating lamp 23, and this vertical spacing determines the temperature rise rate of workpiece to be machined, therefore, in actual applications, can require the difference of the temperature rise rate of workpiece to be machined according to different process and technique position be set accordingly.In addition, the following condition of height demand fulfillment of heated chamber in the vertical direction, that is: technique is met under the prerequisite of the requirement of the temperature rise rate of workpiece to be machined in guarantee technique position, this technique potential energy is made enough to be positioned at the top passing sheet mouth 201, preferably, the height of heated chamber in the vertical direction is 155 ~ 165mm.
It should be noted that, in the present embodiment, lifting unit comprises transmission component 29 and rotary driving source 30, but the present invention is not limited thereto, in actual applications, the linear drives source of straight line cylinder, linear electric motors or linear hydraulic cylinder etc. can also be adopted to replace transmission component 29 and rotary driving source 30, thus three thimbles 24 just can be driven to rise simultaneously or decline without the need to the rotary power provided by rotary driving source 30 being converted to lifting translational motion.
Also it should be noted that, in the present embodiment, the quantity of thimble 24 is three, but the present invention is not limited thereto, and in actual applications, the quantity of thimble can also be more than four, and the thimble of more than four is uniformly distributed relative to the circumference of ring support 25.
It should be noted that further, although in the present embodiment, ring support 25 adopts ring structure, but the present invention is not limited thereto, in actual applications, the support of other structures can also be adopted to replace ring support, the such as support of other arbitrary shapes such as tabular, strip, as long as this support can at heated chamber inner support at least three thimbles, and can drive it to do up-and-down movement, and need not limit the structure of support simultaneously.
As another technical scheme, the present embodiment also provides a kind of plasma processing device, comprises heated chamber and mechanical manipulator, and wherein, heated chamber have employed the above-mentioned heated chamber that the present embodiment provides; Mechanical manipulator is used for when the top of at least three thimbles is positioned at loading position, is transported in heated chamber by workpiece to be machined, and is positioned on the top of at least three thimbles, and workpiece to be machined is shifted out heated chamber from the top of at least three thimbles.
For the above-mentioned plasma processing device that have employed the present embodiment and provide, the heating means that workpiece to be machined heats are described in detail below.Particularly, these heating means comprise the following steps:
S1, the mechanical manipulator level carrying workpiece to be machined moves in heated chamber, and above the top being positioned at least three thimbles;
S2, lifting unit drives at least three thimbles to rise, until the top of at least three thimbles holds up workpiece to be machined from mechanical manipulator;
S3, unloaded mechanical manipulator level shifts out heated chamber;
S4, lifting unit drives at least three thimbles carrying workpiece to be machined to rise, until workpiece to be machined is positioned at process station;
S5, the temperature of heating lamp heating needed for workpiece to be machined to technique;
S6, unloaded mechanical manipulator level moves into heated chamber, and below the top being positioned at least three thimbles;
S7, lifting unit drives at least three thimbles to decline, until workpiece to be machined is placed on mechanical manipulator;
S8, the mechanical manipulator level carrying workpiece to be machined shifts out heated chamber.
As from the foregoing, due at least three thimble liftables, this makes mechanical manipulator only need tangential movement, that is, travel in heated chamber via biography sheet saliva, and above or below the top being positioned at least three thimbles, and go out heated chamber via the translation of biography sheet saliva, and without the need to carrying out up-and-down movement, this can simplify the flow process of handling workpiece to be machined, thus handling speed can be improved, and then process efficiency can be improved.
The plasma processing device that the present embodiment provides, its above-mentioned heated chamber provided by adopting the present embodiment, can heat workpiece to be machined equably, thus can improve the temperature homogeneity of workpiece to be machined, and then can improve the homogeneity of technique.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (11)
1. a heated chamber, is provided with heating unit at its top, in order to adopt thermal-radiating mode towards the internal radiation heat of described heated chamber; The internal perisporium of described heated chamber is provided with and passes sheet mouth, with moving into for workpiece to be machined or shifting out described heated chamber, it is characterized in that, described heated chamber also comprises bogey, and described bogey comprises lifting unit and push pin device, wherein:
Described push pin device is positioned at described heated chamber, in order to support workpiece to be machined;
Described lifting unit is for driving described push pin device to rise or declining, to drive the workpiece to be machined be placed in described push pin device to rise to, technique is carried out in the technique position be positioned at above described biography sheet mouth, or the handling position dropped to corresponding to described biography sheet mouth is loaded and unloaded.
2. heated chamber according to claim 1, is characterized in that, described lifting unit comprises transmission component and rotary driving source, wherein:
Described rotary driving source is used for providing rotary power to described transmission component;
Described transmission component is used for the rotary power provided by described rotary driving source to be converted to lifting translational motion, and passes to described push pin device, rises or decline to make described push pin device.
3. heated chamber according to claim 2, is characterized in that, described transmission component comprises screw-nut assembly or rack and pinion assembly.
4. heated chamber according to claim 1, is characterized in that, described lifting unit, comprising:
Linear drives source, rises for driving described push pin device or declines.
5. heated chamber according to claim 4, is characterized in that, described linear drives source comprises straight line cylinder, linear electric motors or linear hydraulic cylinder.
6. the heated chamber according to claim 1-5 any one, is characterized in that, described push pin device, comprising: ring support and at least three thimbles, wherein:
Described at least three thimbles, in order to support workpiece to be machined;
Described ring support is horizontally set in described heated chamber, and the below of at least three thimbles described in being positioned at, and the bottom of described at least three thimbles is fixed on described ring support, and be uniformly distributed along the circumference of described ring support;
Described ring support is connected with described lifting unit, and under the driving of described lifting unit, described in described ring support drives, at least three thimbles rise simultaneously or decline.
7. heated chamber according to claim 2, it is characterized in that, the diapire of described heated chamber is provided with through hole, and, described lifting unit comprises connecting rod, and wherein: the top of described connecting rod is fixedly connected with described push pin device, the bottom of described connecting rod is through described through hole, and extend to the outside of described heated chamber, and be fixedly connected with described transmission component.
8. heated chamber according to claim 7, it is characterized in that, on described connecting rod, cover is shaped with corrugated tube, the top of described corrugated tube and the diapire of described heated chamber are tightly connected, bottom and the described connecting rod of described corrugated tube are tightly connected, to form the seal cavity be connected with described through hole in the inside of described corrugated tube.
9. heated chamber according to claim 1, is characterized in that, the height of described heated chamber in the vertical direction is 155 ~ 165mm.
10. heated chamber according to claim 7, it is characterized in that, described lifting unit also comprises bracing frame, and described line slideway is arranged on support frame as described above, support frame as described above is fixed on the bottom of described heated chamber, in order to support described transmission component and rotary driving source respectively.
11. 1 kinds of plasma processing devices, comprise heated chamber and mechanical manipulator, it is characterized in that, described heated chamber adopts the heated chamber described in claim 1-10 any one.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310228234.7A CN104233191A (en) | 2013-06-08 | 2013-06-08 | Heating chamber and plasma processing apparatus |
| TW102146393A TWI510655B (en) | 2013-06-08 | 2013-12-16 | Heating chamber and plasma processing device |
| PCT/CN2013/090223 WO2014194653A1 (en) | 2013-06-08 | 2013-12-23 | Heating cavity and semiconductor processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310228234.7A CN104233191A (en) | 2013-06-08 | 2013-06-08 | Heating chamber and plasma processing apparatus |
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| Publication Number | Publication Date |
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| CN104233191A true CN104233191A (en) | 2014-12-24 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310228234.7A Pending CN104233191A (en) | 2013-06-08 | 2013-06-08 | Heating chamber and plasma processing apparatus |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN104233191A (en) |
| TW (1) | TWI510655B (en) |
| WO (1) | WO2014194653A1 (en) |
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| CN105789013A (en) * | 2014-12-25 | 2016-07-20 | 中微半导体设备(上海)有限公司 | Plasma etching device for slicing wafer and method for loading and unloading wafer |
| CN105990181A (en) * | 2015-01-28 | 2016-10-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Ejector pin mechanism and degassing cavity |
| CN106548916A (en) * | 2015-09-16 | 2017-03-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Processing chamber, semiconductor processing equipment and degassing and prewashed method |
| TWI642085B (en) * | 2016-10-27 | 2018-11-21 | 大陸商中微半導體設備（上海）有限公司 | Plasma processing device and method for measuring silicon wafer temperature under high power radio frequency |
| CN112663026A (en) * | 2020-11-25 | 2021-04-16 | 北京北方华创微电子装备有限公司 | Process chamber, semiconductor process equipment and heating control method |
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| CN108315694B (en) * | 2018-05-04 | 2023-11-10 | 成都国泰真空设备有限公司 | Automatic change coating film mechanism |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2014194653A1 (en) | 2014-12-11 |
| TWI510655B (en) | 2015-12-01 |
| TW201446984A (en) | 2014-12-16 |
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