CN210575852U - Heat treatment chamber - Google Patents
Heat treatment chamber Download PDFInfo
- Publication number
- CN210575852U CN210575852U CN201921343299.5U CN201921343299U CN210575852U CN 210575852 U CN210575852 U CN 210575852U CN 201921343299 U CN201921343299 U CN 201921343299U CN 210575852 U CN210575852 U CN 210575852U
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- China
- Prior art keywords
- substrate
- lower chamber
- chamber
- heating
- thermal processing
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 100
- 230000005540 biological transmission Effects 0.000 claims abstract description 31
- 230000005855 radiation Effects 0.000 claims description 4
- 238000007669 thermal treatment Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 abstract description 8
- 238000007872 degassing Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Abstract
The utility model discloses a heat treatment chamber, which comprises an upper chamber, a lower chamber and a heat conducting plate arranged between the upper chamber and the lower chamber; the heating component is arranged in the upper chamber and used for heating the substrate to be processed; the substrate supporting component is arranged in the lower cavity and used for supporting a substrate to be processed; the substrate transfer port is positioned on the side wall of the lower chamber and is used for transferring the substrate into or out of the lower chamber; the reflecting plate is movably attached to the inner wall of the lower chamber through the lifting mechanism, and the substrate transmission port is shielded by the reflecting plate or is completely exposed in the lower chamber along with the up-and-down movement of the reflecting plate. The beneficial effects of the utility model reside in that: the reflecting plate is arranged in the lower cavity, so that the reflecting plate covers the substrate transmission port, the interior of the lower cavity is of a circumferentially symmetrical structure relative to the substrate, a symmetrical process environment is provided for processing the substrate, and the degassing effect of the substrate is improved.
Description
Technical Field
The utility model relates to a semiconductor processing technology field, more specifically relates to a heat treatment cavity.
Background
Physical Vapor Deposition (PVD) is a common processing technique used in the semiconductor field and can be used to process copper interconnect layers in integrated circuits. The manufacturing of the copper interconnection layer mainly comprises the steps of degassing, precleaning, depositing and the like, wherein the degassing step is to remove water vapor and other volatile impurities on a processed workpiece such as a substrate and the like. When the degassing step is carried out, the substrate is required to be rapidly heated to about 350 ℃, the substrate is required to be uniformly heated, otherwise, volatile impurities generated in partial areas of the substrate are not completely removed, so that adverse effects are brought to subsequent processes, and the substrate is cracked even due to serious uneven temperature of the substrate.
Accordingly, a thermal processing chamber is desired that can achieve uniform heating of the substrate.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a heat treatment cavity can satisfy the samming demand of thermal treatment object.
To achieve the above object, the present invention provides a heat treatment chamber, comprising:
the heat conducting plate is arranged between the upper chamber and the lower chamber;
the heating component is arranged in the upper chamber and used for heating the substrate to be processed;
the substrate supporting component is arranged in the lower cavity and used for supporting a substrate to be processed;
the substrate transfer port is positioned on the side wall of the lower chamber and is used for transferring the substrate into or out of the lower chamber;
the reflecting plate is movably attached to the inner wall of the lower chamber through a lifting mechanism, and the substrate transmission port is shielded by the reflecting plate or is completely exposed in the lower chamber along with the up-and-down movement of the reflecting plate.
Optionally, the reflective plate is attached to two opposite sidewalls of the lower chamber, one of the sidewalls is provided with the substrate transfer port, or the reflective plate is attached to an inner wall of the lower chamber in a surrounding manner.
Alternatively, the height of the reflection plate is greater than that of the substrate transfer port, and the height of the reflection plate is smaller than the distance between the lower edge of the substrate transfer port and the bottom surface of the lower chamber or the distance between the upper edge of the substrate transfer port and the heat conductive plate.
As an alternative, the back surface of the reflecting plate is provided with a plurality of first T-shaped protrusions, and first T-shaped grooves are formed between every two adjacent first T-shaped protrusions; the lower chamber inner wall comprises a plurality of second T-shaped bulges, second T-shaped grooves are formed between the adjacent second T-shaped bulges, the first T-shaped bulges are matched with the second T-shaped grooves, and the second T-shaped bulges are matched with the first T-shaped grooves to realize the connection between the reflecting plate and the lower chamber inner wall.
Alternatively, the lifting mechanism comprises a motor and a screw transmission mechanism driven by the motor, and the screw transmission mechanism comprises a transmission assembly and a connecting rod connected with the transmission assembly.
Alternatively, a through hole is formed in the bottom of the lower chamber, the top end of the connecting rod is connected with the bottom of the reflecting plate, and the bottom end of the connecting rod penetrates through the through hole, extends to the outside of the lower chamber and is connected with the transmission assembly.
As an alternative, the connecting rod structure further comprises a corrugated pipe sleeved on the periphery of the lower portion of the connecting rod, the upper end of the corrugated pipe is connected with the bottom wall of the lower chamber in a sealing mode, and the bottom end of the corrugated pipe is connected with the bottom of the connecting rod in a sealing mode.
Alternatively, the heating parts are a plurality of cylindrical heating lamp tubes arranged in parallel, and the distance between the adjacent heating lamp tubes is gradually reduced from the middle to the two ends.
Alternatively, the heating parts are a plurality of annular heating lamp tubes with concentric circles and different radiuses.
Alternatively, the heating element is a heat radiation lamp tube with adjustable power.
The beneficial effects of the utility model reside in that: through set up the reflecting plate in lower cavity, make the reflecting plate shelter from substrate transmission mouth, the inside that makes lower cavity is the structure of circumference symmetry for the substrate, provides a symmetrical technology environment for the processing of substrate, consequently to the substrate, the light heat quantity of reflecting to the base plate through lower cavity inner wall no longer receives the influence because of the existence of substrate transmission mouth to make the temperature on substrate surface more even, promoted the effect of degasing of substrate.
The apparatus of the present invention has other features and advantages which will be apparent from or are set forth in more detail in the accompanying drawings and the following detailed description, which are incorporated herein, and which together serve to explain certain principles of the invention.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail exemplary embodiments of the present invention with reference to the attached drawings, in which like reference numerals generally represent like parts.
Figure 1 shows a schematic cross-sectional view of a prior art thermal processing chamber.
Fig. 2 illustrates a schematic cross-sectional view of a thermal processing chamber according to an embodiment of the present invention.
Fig. 3 is a schematic diagram illustrating a connection manner between the reflection plate and the inner wall of the lower chamber according to an embodiment of the present invention.
Description of reference numerals:
1-a substrate transfer port; 2-a substrate; 3-an upper chamber; 4-a lower chamber; 5-heat conducting plate; 6-a support member; 7-a reflector plate; 8-a through hole; 9-heating the lamp tube; 10-a motor; 11-a conveying member; 12-a bellows; 13-connecting rod.
Detailed Description
In the current thermal processing chamber, there is still a factor of non-uniform heating of the substrate, and fig. 1 is a cross-sectional view of the thermal processing chamber in the prior art. As can be seen from fig. 1, the substrate transfer port 1 on the sidewall of the thermal processing chamber may cause non-uniform heat reflected from the inner wall surface of the thermal processing chamber onto the substrate 2, resulting in non-uniform temperature distribution of the substrate 2, which may affect the subsequent process of the substrate 2. In other words, since the substrate transfer port 1 is formed in the sidewall of the chamber, the internal structure of the chamber is not completely symmetrical, and the light reflected by the chamber wall with the opening side onto the substrate 2 is smaller than the light reflected by the chamber wall without the opening side onto the substrate 2, which causes unequal amounts of heat reflected by the inner wall of the chamber onto the substrate 2, and thus poor heating uniformity of the substrate 2.
In order to solve the problem, the utility model provides a heat treatment cavity, the utility model provides a through set up the reflecting plate in cavity down, make the reflecting plate block substrate transmission mouth to the structure of cavity is symmetrical structure for the substrate under making, and then makes the substrate heating more even.
The invention will be described in more detail below with reference to the accompanying drawings. While the preferred embodiments of the present invention have been illustrated in the accompanying drawings, it is to be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, this embodiment is provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
Fig. 2 is a schematic cross-sectional view illustrating a thermal processing chamber according to an embodiment of the present invention, and referring to fig. 2, a thermal processing chamber according to an embodiment of the present invention includes:
an upper chamber 3 and a lower chamber 4, and a heat-conducting plate 5 disposed between the upper chamber 3 and the lower chamber 4;
a heating member disposed in the upper chamber 3 for heating the substrate 2 to be processed;
a substrate supporting member 6 disposed in the lower chamber 4 for supporting the substrate 2 to be processed;
a substrate transfer port 1 on a sidewall of the lower chamber 4 for transferring the substrate 2 into or out of the lower chamber 4;
the reflecting plate 7 is movably attached to the inner wall of the lower chamber 4 by the elevating mechanism, and the substrate transfer port 1 is shielded by the reflecting plate 7 or exposed to the lower chamber 4 along with the up-and-down movement of the reflecting plate 7.
Specifically, the heat treatment chamber comprises an upper chamber 3 and a lower chamber 4, wherein a heating component is arranged in the upper chamber 3 and is used for heating the substrate 2 to be processed, for example, the substrate 2 is heated to a preset temperature through the heat radiation mode of the heating component, so as to remove water vapor and other volatile impurities adsorbed on the surface of the substrate 2 and prevent the subsequent processes of the copper interconnection PVD, such as precleaning and deposition processes, from being influenced. The lower chamber 4 is provided therein with a substrate supporting member 6 for supporting the substrate 2, the substrate 2 is placed on the substrate supporting member 6, and heat emitted from the heating member is absorbed by the substrate 2 through the heat conductive plate 5. The heat conducting plate 5 divides the heat treatment chamber into an upper chamber 3 and a lower chamber 4, the heat conducting plate 5 has light transmittance and seals the lower chamber 4, a vacuum environment is provided for the substrate 2, and the degassing effect of the substrate 2 is ensured, wherein the heat conducting plate 5 is a quartz plate. The lower chamber 4 is provided with substrate transfer ports 1 on a side wall thereof, and only one substrate transfer port 1 is usually provided for transferring a substrate 2 into or out of the lower chamber 4, for example, the substrate 2 to be processed is transferred into the lower chamber 4, and after the substrate 2 is processed, the substrate is transferred out of the lower chamber 4 through the substrate transfer port 1.
The reflecting plate 7 is movably attached to the inner wall of the lower chamber 4 and can shield the substrate transmission port 1, so that the inner wall of the lower chamber 4 is of a symmetrical structure relative to the substrate 1. When the reflecting plate 7 moves up and down, the substrate transfer port 1 can be shielded by the reflecting plate 7 or exposed in the lower chamber 4, specifically, when the substrate 2 needs to be transferred into or out of the lower chamber 4, the reflecting plate 7 is moved to completely expose the substrate transfer port 1 in the lower chamber, and the transfer process of the substrate 2 is not influenced; when the substrate 2 needs to be degassed, the reflecting plate 7 is moved after the substrate 2 is placed, so that the reflecting plate 7 completely shields the substrate transmission port 1. In one example, the height of the reflection plate 7 is greater than that of the substrate transfer port 1 to achieve complete coverage of the substrate transfer port 1, and the height of the reflection plate 7 is smaller than the distance between the lower edge of the substrate transfer port 1 and the bottom surface of the lower chamber 4 or the distance between the upper edge of the substrate transfer port 1 and the heat conductive plate 5 to achieve that the substrate transfer port 1 can be completely exposed in the lower chamber 4 without affecting the transfer process of the substrate 2 when the reflection plate 7 is moved. The specific size and position of the reflecting plate 7 are not strictly limited as long as the lower chamber 4 can be constructed in a symmetrical structure and the substrate transfer port 1 can be completely exposed and completely blocked. For example, in one embodiment, the lower chamber 4 is rectangular, the reflective plate 7 is disposed on two opposite sidewalls, one of the sidewalls is provided with the substrate transfer port 1, and the reflective plates 7 on the two sidewalls are identical in size and shape. The reflecting plate 7 is preferably rectangular. In another example, the reflective plate 7 is a closed ring shape and is attached to the inner periphery of the lower chamber 4, and the reflective plate 7 has a symmetrical structure after being unfolded, and preferably has a rectangular shape after being unfolded. In this example, the material of the reflection plate 7 is a specular reflection material, stainless steel, and in other examples, the material of the reflection plate 7 may be a diffuse reflection material.
In this example, referring to fig. 3, the back surface of the reflection plate 7 is provided with a plurality of first T-shaped protrusions 20, and a first T-shaped groove is formed between adjacent first T-shaped protrusions 20; the inner wall of the lower chamber 4 comprises a plurality of second T-shaped protrusions 21, second T-shaped grooves are formed between every two adjacent second T-shaped protrusions 21, the first T-shaped protrusions 20 are matched with the second T-shaped grooves, and the second T-shaped protrusions 21 are matched with the first T-shaped grooves, so that the reflecting plate 7 is attached to the inner wall of the lower chamber 4.
In this example, the lifting mechanism includes a motor 10 and a transmission member 11 driven by the motor, and a link 13 connected to the transmission member 11. The motor 10 is located outside the lower chamber 4, the connecting rod 13 is located inside the lower chamber 4, the bottom of the lower chamber 4 is provided with a through hole 8, the transmission part 11 penetrates through the through hole 8, the top end of the connecting rod 13 is connected with the bottom of the reflection plate 7, the bottom end of the connecting rod 13 is connected with the top end of the transmission part 11, and the bottom of the transmission part 11 is connected with the motor 10. In this embodiment, the bellows 12 is sleeved on the periphery of the transmission component 11, the top end of the bellows 12 is hermetically connected with the bottom wall of the lower chamber 4, and the bottom end of the bellows 12 is hermetically connected with the bottom of the transmission component 11, so that the sealing performance of the lower chamber 4 is ensured, and the lower chamber 4 is prevented from being communicated with the external atmosphere to affect the degassing process.
In this example, the heating member is a plurality of cylindrical heating lamps 9 arranged in parallel, and the distance between adjacent heating lamps 9 is gradually reduced from the middle to both ends. Specifically, in the case of an even distribution of the heating lamps 9, the temperature in the middle area of the lower chamber 4 is higher than that in the edge area, and the temperature distribution is not uniform, in this example, the distance between the heating lamps 9 above the middle of the lower chamber 4 is larger, and the distances between the heating lamps 9 in the two end areas are gradually reduced, so that the temperatures in different areas of the lower chamber 4 are more uniform.
In another example, the heating member is a plurality of annular heating lamps having concentric circles with different radii. Specifically, the heating member is composed of heating lamps having different annular radii, the plurality of heating lamps have the same center, the radii of the plurality of heating lamps gradually decrease from the outer ring to the inner ring, the different heating lamps have the same thickness, and preferably, the center of the heating lamp is located right above the center of the supporting member 12, i.e., the position where the substrate 2 is placed. In one example, the bottoms of the different heating tubes are at a uniform distance from the thermally conductive plate. In another example, the different heating lamps are at different distances from the heat conducting plate, specifically, the heating lamps are distributed in an arc shape, the middle heating lamp is located at the top end of the arc shape, and the bottoms of the different heating lamps are at the same distance from the center of the supporting member 12.
In another example, the heating element is a heat radiation lamp with adjustable power, and the power of different heating lamps is controlled by a control circuit. Specifically, a plurality of temperature sensors are arranged in different areas of the heat treatment chamber, the temperature is fed back to the control circuit by the sensors in real time, and the control circuit can adjust the power of the heating lamp tube according to the temperature of the sensors, so that the temperatures of the different areas of the heat treatment chamber are kept consistent.
While various embodiments of the present invention have been described above, the above description is intended to be illustrative, not exhaustive, and not limited to the disclosed embodiments. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.
Claims (10)
1. The utility model provides a thermal treatment chamber, includes, goes up cavity and lower cavity to and set up the heat-conducting plate between last cavity and lower cavity, its characterized in that still includes:
the heating component is arranged in the upper chamber and used for heating the substrate to be processed;
the substrate supporting component is arranged in the lower cavity and used for supporting a substrate to be processed;
the substrate transmission port penetrates through the side wall of the lower chamber and is used for transmitting the substrate into or out of the lower chamber;
the reflecting plate is movably and symmetrically attached to the inner wall of the lower chamber through the lifting mechanism and at least covers the substrate transmission port, and the substrate transmission port is completely shielded or completely exposed in the lower chamber by the reflecting plate along with the up-down movement of the reflecting plate.
2. The thermal processing chamber of claim 1, wherein the reflector plate is attached to two opposing sidewalls of the lower chamber, wherein one of the sidewalls is provided with the substrate transfer port, or wherein the reflector plate is attached around an inner wall of the lower chamber.
3. The thermal processing chamber of claim 1, wherein the height of the reflective plate is less than a distance between a lower edge of the substrate transfer port and the bottom surface of the lower chamber or less than a distance between an upper edge of the substrate transfer port and the thermally conductive plate.
4. The thermal processing chamber of claim 1, wherein the reflective plate has a plurality of first T-shaped protrusions on a back surface thereof, and a first T-shaped groove is formed between adjacent first T-shaped protrusions; the lower chamber inner wall comprises a plurality of second T-shaped bulges, second T-shaped grooves are formed between the adjacent second T-shaped bulges, the first T-shaped bulges are matched with the second T-shaped grooves, and the second T-shaped bulges are matched with the first T-shaped grooves to realize that the reflecting plate is attached to the lower chamber inner wall.
5. The thermal processing chamber of claim 1, wherein the lifting mechanism comprises a motor, a transmission member and a connecting rod, the motor is connected with the bottom end of the transmission member, the top end of the transmission member is connected with the bottom of the connecting rod, and the top of the connecting rod is connected with the bottom of the reflection plate.
6. The thermal processing chamber of claim 5, wherein the bottom wall of the lower chamber is provided with a through hole, the transmission member penetrates through the through hole, the upper end of the transmission member is connected with a connecting rod positioned in the lower chamber, and the lower end of the transmission member is connected with a motor positioned outside the lower chamber.
7. The thermal processing chamber of claim 6, further comprising a bellows sleeved on the periphery of the transmission member, wherein a top end of the bellows is hermetically connected to the bottom wall of the lower chamber, and a bottom end of the bellows is hermetically connected to a bottom of the transmission member.
8. The thermal processing chamber of claim 1, wherein the heating member is a plurality of cylindrical heating lamps arranged in parallel, and the distance between adjacent heating lamps is gradually reduced from the middle to both ends.
9. The thermal processing chamber of claim 1, wherein the heating element comprises a plurality of annular heating lamps having concentric circles and different radii.
10. The thermal processing chamber of claim 1, wherein the heating element is a heat radiation lamp having adjustable power.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921343299.5U CN210575852U (en) | 2019-08-19 | 2019-08-19 | Heat treatment chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921343299.5U CN210575852U (en) | 2019-08-19 | 2019-08-19 | Heat treatment chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210575852U true CN210575852U (en) | 2020-05-19 |
Family
ID=70659797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921343299.5U Expired - Fee Related CN210575852U (en) | 2019-08-19 | 2019-08-19 | Heat treatment chamber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210575852U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115547896A (en) * | 2022-11-29 | 2022-12-30 | 无锡邑文电子科技有限公司 | Non-water-cooling semiconductor wafer low-temperature treatment equipment |
-
2019
- 2019-08-19 CN CN201921343299.5U patent/CN210575852U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115547896A (en) * | 2022-11-29 | 2022-12-30 | 无锡邑文电子科技有限公司 | Non-water-cooling semiconductor wafer low-temperature treatment equipment |
| CN115547896B (en) * | 2022-11-29 | 2023-03-10 | 无锡邑文电子科技有限公司 | Non-water-cooling semiconductor wafer low-temperature processing equipment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200519 |
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| CF01 | Termination of patent right due to non-payment of annual fee |