CN104217977A - 硅片激光退火设备的工件台装置 - Google Patents

硅片激光退火设备的工件台装置 Download PDF

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Publication number
CN104217977A
CN104217977A CN201310215266.3A CN201310215266A CN104217977A CN 104217977 A CN104217977 A CN 104217977A CN 201310215266 A CN201310215266 A CN 201310215266A CN 104217977 A CN104217977 A CN 104217977A
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post
work stage
picking
shuttle
table device
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童宇锋
郑刚
刘国淦
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Shanghai Micro Electronics Equipment Co Ltd
Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Micro Electronics Equipment Co Ltd
Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Priority to CN201310215266.3A priority Critical patent/CN104217977A/zh
Publication of CN104217977A publication Critical patent/CN104217977A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Robotics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本发明公开了一种硅片激光退火设备的工件台装置，包括工件台平面和三组以上接送柱，每组接送柱由两个以上小接送柱组合而成；工件台平面上对应小接送柱的位置开孔，作为小接送柱的升降通道。本发明通过缩小单个接送柱的直径，用多个小接送柱组成一个接送柱，从而在保证硅片传输安全性的同时，增加了退火时硅片背面的支撑范围，改善了硅片在退火时的碎片问题。

Description

硅片激光退火设备的工件台装置
技术领域
本发明涉及半导体制造领域，特别是涉及硅片激光退火设备中的工件台装置。
背景技术
在IGBT（绝缘栅双极型晶体管）等项目中，需要进行硅片背面的离子激活，由于离子激活需要的温度较高，会影响硅片正面金属布线和器件性能，因此不能使用常规的炉管加热，目前通常使用背面激光退火工艺进行背面离子激活。背面激光退火利用的是激光在瞬间产生的高温对硅片表面的离子进行激活，由于该高温持续时间短，因此不会对正面产生破坏和影响。但是进行背面激光退火的硅片通常都是减薄后的薄片，当硅片比较薄时，在瞬间高温下很容易发生裂片现象，因此必须有良好的导热装置和支撑台面。现有的硅片激光退火设备工件台在应用时，普遍使用真空吸附设计，但为了实现硅片退火前的接送和预对准等功能，需要在工件台的中心开三个孔，如图1（A）所示，并在其下方设计有三个接送柱，如图1（B）所示。为便于传输薄片，一般开孔均在10mm及以上，在该开孔区域就会出现硅片在退火时背面无接触或无真空吸附的状态，同时热传导能力也与其他区域略有差别，此时的硅片很容易在退火到该区域时发生裂片现象（如图2所示）。
经过实验证明，当开孔小于一定范围时，即当完全无接触或无真空吸附面积减小时，可以大大改善硅片的碎片率，但减小接送柱的直径同样会减小接送柱与硅片的接触面积，这对于薄硅片而言，同样会大大增加在硅片接送时的碎片率。
发明内容
本发明要解决的技术问题是提供一种硅片激光退火设备的工件台装置，它可以改善硅片在退火时的碎片问题。
为解决上述技术问题，本发明的硅片激光退火设备的工件台装置，包括工件台平面和三组以上接送柱，每组接送柱由两个以上小接送柱组合而成；工件台平面上对应小接送柱的位置开孔，作为小接送柱的升降通道。
本发明的工件台装置，通过缩小单个接送柱的直径，用多个小接送柱组合成一个接送柱，在保证硅片传输安全性的同时，增加了退火时硅片背面的支撑范围，避免了硅片与工件台局部大范围无接触，从而在不更改其他装置的条件下，改善了硅片在退火时的碎片问题，提高了薄硅片可以承受的退火温度，拓宽了薄片背面工艺的适用范围。
附图说明
图1是普通的硅片激光退火设备的工件台装置。其中，（A）是工件台的俯视图；（B）是工件台平面下方的三个接送柱的示意图。
图2是使用普通的硅片激光退火设备工件台装置，硅片在退火到开孔区域时发生裂片。
图3是本发明实施例的硅片激光退火设备的工件台装置示意图。其中，（A）是工件台的俯视示意图；（B）是工件台的侧视示意图。
具体实施方式
为对本发明的技术内容、特点与功效有更具体的了解，现结合图示的实施方式，详述如下：
本实施例的硅片激光退火设备的工件台装置，将接送柱设计成多柱组合的形式，如图3所示，在工件台中心附近的任意三个位置（位置可以自由设定，但以对称为好，位置以在中心附近适当距离为佳，8寸台建议10mm～1000mm为最佳，12寸台建议25mm～1500mm为最佳），各开一组密集小孔，作为小接送柱的升降通道。孔的大小略微大于小接送柱的直径，孔的数量与小接送柱的数量相对应。
在工件台下面的平面板上，对应于工件台开孔位置，设计三组接送柱，每组接送柱由多个密集的小接送柱组成，每个小接送柱之间是相互连接的工件台，小接送柱下方都固定在同一个平面板上，以实现同时升降。小接送柱的直径在1mm～10mm之间为最佳，太小会不利于接送，太大会不利于硅片的退火。小接送柱的数量可以任意设置，数量越多约有利于接送时的安全性，本实施例设置的小接送柱数量为每组5个，如图3所示。接送柱头部材质建议使用非金属，以避免接送柱与硅片接触时，对硅片产生损伤和破裂，以及其他金属离子污染。
进行激光退火工艺时，首先由机械手臂把硅片传送到工件台上方，此时小传送柱从工件台下方通过小孔升高至工件台上，然后机械手臂下降，将硅片放在工件台上，小传送柱再下降至工件台下，硅片就被放置在工件台上进行退火。
上述工件台装置只需通过改造现有工件台的接送柱和工件台的开孔即可形成，因此不会影响其他传输系统、对准系统等部件和性能。

Claims (6)

1.硅片激光退火设备的工件台装置，其特征在于，包括工件台平面和三组以上接送柱，每组接送柱由两个以上小接送柱组合而成；工件台平面上对应小接送柱的位置开孔，作为小接送柱的升降通道。
2.根据权利要求1所述的工件台装置，其特征在于，每组接送柱包括有5个小接送柱。
3.根据权利要求1或2所述的工件台装置，其特征在于，所述小接送柱的直径为1～10mm。
4.根据权利要求1所述的工件台装置，其特征在于，所述小接送柱的材质为非金属。
5.根据权利要求1所述的工件台装置，其特征在于，三组接送柱位置对称。
6.根据权利要求1或5所述的工件台装置，其特征在于，采用8寸工件台时，每组接送柱中心距离工件台中心10～1000mm；采用12寸工件台时，每组接送柱中心距离工件台中心25mm～1500mm。
CN201310215266.3A 2013-05-31 2013-05-31 硅片激光退火设备的工件台装置 Pending CN104217977A (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030029570A1 (en) * 2000-10-16 2003-02-13 Keisuke Kawamura Wafer holder, wafer support member, wafer holding device, and heat treating furnance
CN101038889A (zh) * 2006-03-16 2007-09-19 东京毅力科创株式会社 基板载置台及基板处理装置
JP2008210965A (ja) * 2007-02-26 2008-09-11 Sumitomo Heavy Ind Ltd 基板保持装置及びレーザアニール装置
CN101645410A (zh) * 2008-08-08 2010-02-10 台湾积体电路制造股份有限公司 用于半导体晶片制造工艺的晶片承载装置及加热器
US20120269498A1 (en) * 2011-04-22 2012-10-25 Samsung Electronics Co., Ltd. Unit for supporting a substrate and apparatus for treating a substrate with the unit

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030029570A1 (en) * 2000-10-16 2003-02-13 Keisuke Kawamura Wafer holder, wafer support member, wafer holding device, and heat treating furnance
CN101038889A (zh) * 2006-03-16 2007-09-19 东京毅力科创株式会社 基板载置台及基板处理装置
JP2008210965A (ja) * 2007-02-26 2008-09-11 Sumitomo Heavy Ind Ltd 基板保持装置及びレーザアニール装置
CN101645410A (zh) * 2008-08-08 2010-02-10 台湾积体电路制造股份有限公司 用于半导体晶片制造工艺的晶片承载装置及加热器
US20120269498A1 (en) * 2011-04-22 2012-10-25 Samsung Electronics Co., Ltd. Unit for supporting a substrate and apparatus for treating a substrate with the unit

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