CN104183610B - 具有拥有栅极之间的窄间隔的全局快门的图像传感器像素单元以及成像系统及其制造方法 - Google Patents
具有拥有栅极之间的窄间隔的全局快门的图像传感器像素单元以及成像系统及其制造方法 Download PDFInfo
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- CN104183610B CN104183610B CN201310724251.XA CN201310724251A CN104183610B CN 104183610 B CN104183610 B CN 104183610B CN 201310724251 A CN201310724251 A CN 201310724251A CN 104183610 B CN104183610 B CN 104183610B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14614—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor having a special gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (28)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/901,958 US8835211B1 (en) | 2013-05-24 | 2013-05-24 | Image sensor pixel cell with global shutter having narrow spacing between gates |
US13/901,958 | 2013-05-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104183610A CN104183610A (zh) | 2014-12-03 |
CN104183610B true CN104183610B (zh) | 2017-05-31 |
Family
ID=51493333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310724251.XA Active CN104183610B (zh) | 2013-05-24 | 2013-12-25 | 具有拥有栅极之间的窄间隔的全局快门的图像传感器像素单元以及成像系统及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8835211B1 (zh) |
CN (1) | CN104183610B (zh) |
HK (1) | HK1204389A1 (zh) |
TW (1) | TWI515887B (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9419044B2 (en) * | 2014-04-17 | 2016-08-16 | Omnivision Technologies, Inc. | Image sensor pixel having storage gate implant with gradient profile |
US9484370B2 (en) * | 2014-10-27 | 2016-11-01 | Omnivision Technologies, Inc. | Isolated global shutter pixel storage structure |
US9461088B2 (en) * | 2014-12-01 | 2016-10-04 | Omnivision Technologies, Inc. | Image sensor pixel with multiple storage nodes |
US9472587B2 (en) * | 2015-01-27 | 2016-10-18 | Omnivision Technologies, Inc. | Storage transistor with optical isolation |
US9899445B2 (en) | 2015-05-19 | 2018-02-20 | Canon Kabushiki Kaisha | Method for manufacturing solid-state image pickup apparatus, solid-state image pickup apparatus, and image pickup system including the same |
US9935140B2 (en) | 2015-05-19 | 2018-04-03 | Canon Kabushiki Kaisha | Solid state imaging device, manufacturing method of solid state imaging device, and imaging system |
US9578265B2 (en) * | 2015-06-11 | 2017-02-21 | Stmicroelectronics (Grenoble 2) Sas | Double charge storage area image capture device pixel structure |
WO2017061951A1 (en) * | 2015-10-08 | 2017-04-13 | Heptagon Micro Optics Pte. Ltd. | Optoelectronic modules operable to collect spectral data and distance data |
FR3043495A1 (fr) * | 2015-11-09 | 2017-05-12 | St Microelectronics Crolles 2 Sas | Capteur d'images a obturation globale |
US9819883B2 (en) * | 2015-12-03 | 2017-11-14 | Omnivision Technologies, Inc. | Global shutter correction |
KR102662585B1 (ko) | 2017-01-09 | 2024-04-30 | 삼성전자주식회사 | 이미지 센서 |
US10559614B2 (en) * | 2018-03-09 | 2020-02-11 | Semiconductor Components Industries, Llc | Dual conversion gain circuitry with buried channels |
JP7455525B2 (ja) * | 2018-07-17 | 2024-03-26 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の製造方法、および電子機器 |
US10566359B1 (en) * | 2018-08-22 | 2020-02-18 | Omnivision Technologies, Inc. | Variably biased isolation structure for global shutter pixel storage node |
US10741593B1 (en) * | 2019-05-24 | 2020-08-11 | Omnivision Technologies, Inc. | Vertical transfer gate storage for a global shutter in an image sensor |
JP2021044439A (ja) * | 2019-09-12 | 2021-03-18 | 浜松ホトニクス株式会社 | 裏面入射型撮像素子 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101877769A (zh) * | 2009-04-30 | 2010-11-03 | 美商豪威科技股份有限公司 | 具有全域快门的图像传感器 |
CN102468317A (zh) * | 2010-11-16 | 2012-05-23 | 佳能株式会社 | 固态图像传感器、其制造方法和成像系统 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6664191B1 (en) | 2001-10-09 | 2003-12-16 | Advanced Micro Devices, Inc. | Non self-aligned shallow trench isolation process with disposable space to define sub-lithographic poly space |
US7115923B2 (en) * | 2003-08-22 | 2006-10-03 | Micron Technology, Inc. | Imaging with gate controlled charge storage |
US6998657B2 (en) * | 2003-10-21 | 2006-02-14 | Micron Technology, Inc. | Single poly CMOS imager |
KR100660324B1 (ko) * | 2004-07-01 | 2006-12-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
JP2010003868A (ja) * | 2008-06-20 | 2010-01-07 | Sanyo Electric Co Ltd | 撮像装置 |
JP5453832B2 (ja) * | 2009-02-20 | 2014-03-26 | ソニー株式会社 | 固体撮像装置および撮像装置 |
-
2013
- 2013-05-24 US US13/901,958 patent/US8835211B1/en active Active
- 2013-12-05 TW TW102144647A patent/TWI515887B/zh active
- 2013-12-25 CN CN201310724251.XA patent/CN104183610B/zh active Active
-
2014
- 2014-07-17 US US14/333,767 patent/US9041072B2/en active Active
-
2015
- 2015-05-19 HK HK15104762.1A patent/HK1204389A1/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101877769A (zh) * | 2009-04-30 | 2010-11-03 | 美商豪威科技股份有限公司 | 具有全域快门的图像传感器 |
CN102468317A (zh) * | 2010-11-16 | 2012-05-23 | 佳能株式会社 | 固态图像传感器、其制造方法和成像系统 |
Also Published As
Publication number | Publication date |
---|---|
US20140346572A1 (en) | 2014-11-27 |
HK1204389A1 (zh) | 2015-11-13 |
TW201445714A (zh) | 2014-12-01 |
TWI515887B (zh) | 2016-01-01 |
US8835211B1 (en) | 2014-09-16 |
CN104183610A (zh) | 2014-12-03 |
US9041072B2 (en) | 2015-05-26 |
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