CN104142416B - 用于电流测量的设备 - Google Patents

用于电流测量的设备 Download PDF

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Publication number
CN104142416B
CN104142416B CN201410133683.8A CN201410133683A CN104142416B CN 104142416 B CN104142416 B CN 104142416B CN 201410133683 A CN201410133683 A CN 201410133683A CN 104142416 B CN104142416 B CN 104142416B
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CN
China
Prior art keywords
current
magnetic field
current conductor
conductor
sensor
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Active
Application number
CN201410133683.8A
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English (en)
Chinese (zh)
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CN104142416A (zh
Inventor
罗伯特·拉兹
M·阿克曼
陈健
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Melexis Technologies SA
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Melexis Technologies SA
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Publication of CN104142416A publication Critical patent/CN104142416A/zh
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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0092—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring current only
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/07—Hall effect devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/207—Constructional details independent of the type of device used
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
CN201410133683.8A 2013-05-07 2014-04-04 用于电流测量的设备 Active CN104142416B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
CH9242013 2013-05-07
CH924/13 2013-05-07
CHCH924/13 2013-05-07
CH1130/13 2013-06-17
CHCH1130/13 2013-06-17
CH01130/13A CH708052B1 (de) 2013-05-07 2013-06-17 Vorrichtung zur Strommessung.

Publications (2)

Publication Number Publication Date
CN104142416A CN104142416A (zh) 2014-11-12
CN104142416B true CN104142416B (zh) 2017-10-27

Family

ID=50190174

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410133683.8A Active CN104142416B (zh) 2013-05-07 2014-04-04 用于电流测量的设备

Country Status (5)

Country Link
US (1) US9547024B2 (enExample)
EP (1) EP2801832B1 (enExample)
JP (1) JP6467696B2 (enExample)
CN (1) CN104142416B (enExample)
CH (1) CH708052B1 (enExample)

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CH707687B1 (de) * 2013-03-08 2016-09-15 Melexis Technologies Nv Stromsensor.
US9823329B2 (en) * 2014-10-15 2017-11-21 Honeywell International Inc. Magnetic current sensor calibration system
US9860987B2 (en) * 2015-02-13 2018-01-02 Deere & Company Electronic assembly with one or more heat sinks
US9810721B2 (en) * 2015-12-23 2017-11-07 Melexis Technologies Sa Method of making a current sensor and current sensor
US10283699B2 (en) * 2016-01-29 2019-05-07 Avago Technologies International Sales Pte. Limited Hall-effect sensor isolator
US10165670B2 (en) * 2016-04-29 2018-12-25 Deere & Company Electrical connector assembly
EP3306325B1 (en) * 2016-10-05 2021-07-21 Fico Triad, S.A. A current measuring device
EP3367067B1 (en) * 2017-02-28 2019-07-03 Melexis Technologies SA Position sensor and method of position sensing
JP6771094B2 (ja) * 2017-04-11 2020-10-21 アルプスアルパイン株式会社 電流センサ
WO2019021764A1 (ja) * 2017-07-24 2019-01-31 株式会社村田製作所 アクチュエータ、およびアクチュエータの製造方法
CN107942251B (zh) 2017-10-23 2020-10-16 宁德时代新能源科技股份有限公司 电流检测系统、方法和电流检测装置
US11982693B2 (en) * 2018-10-11 2024-05-14 The University Of North Carolina At Charlotte Systems and methods to detect and measure the current mismatch among parallel semiconductor devices
CN114556115B (zh) * 2019-10-08 2025-04-08 阿尔卑斯阿尔派株式会社 磁传感器以及具备该磁传感器的电流检测装置
US11796572B2 (en) * 2020-10-31 2023-10-24 Melexis Technologies Sa Current sensing system
DE102020214311A1 (de) * 2020-11-13 2022-05-19 Zf Friedrichshafen Ag Leiterplattenanordnung, Inverter sowie Kraftfahrzeug
DE102021125397A1 (de) * 2021-09-30 2023-03-30 Infineon Technologies Ag Chipgehäuse mit kontaktklammer

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US5075759A (en) * 1989-07-21 1991-12-24 Motorola, Inc. Surface mounting semiconductor device and method
US5942895A (en) * 1995-10-30 1999-08-24 Sentron Ag Magnetic field sensor and current and/or energy sensor
CN102016606A (zh) * 2008-06-02 2011-04-13 阿莱戈微系统公司 用于电流检测电路和集成电流传感器的装置
CN102257394A (zh) * 2008-10-21 2011-11-23 霍尼韦尔国际公司 具有包括夹在电导体中间的磁导率层的场屏蔽布置的电流传感器
CN102969446A (zh) * 2011-08-30 2013-03-13 英飞凌科技股份有限公司 半导体芯片封装和方法

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GB9500974D0 (en) * 1995-01-18 1995-03-08 Horstmann Timers & Controls Electricity measurement apparatus
EP0772046B1 (de) 1995-10-30 2002-04-17 Sentron Ag Magnetfeldsensor und Strom- oder Energiesensor
JP2002202327A (ja) * 2000-10-23 2002-07-19 Sanken Electric Co Ltd ホール素子を備えた電流検出装置
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US9389247B2 (en) * 2011-11-04 2016-07-12 Infineon Technologies Ag Current sensors

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US5075759A (en) * 1989-07-21 1991-12-24 Motorola, Inc. Surface mounting semiconductor device and method
US5942895A (en) * 1995-10-30 1999-08-24 Sentron Ag Magnetic field sensor and current and/or energy sensor
CN102016606A (zh) * 2008-06-02 2011-04-13 阿莱戈微系统公司 用于电流检测电路和集成电流传感器的装置
CN102257394A (zh) * 2008-10-21 2011-11-23 霍尼韦尔国际公司 具有包括夹在电导体中间的磁导率层的场屏蔽布置的电流传感器
CN102969446A (zh) * 2011-08-30 2013-03-13 英飞凌科技股份有限公司 半导体芯片封装和方法

Also Published As

Publication number Publication date
JP6467696B2 (ja) 2019-02-13
CN104142416A (zh) 2014-11-12
CH708052B1 (de) 2016-09-15
US9547024B2 (en) 2017-01-17
JP2014219386A (ja) 2014-11-20
US20140333301A1 (en) 2014-11-13
CH708052A1 (de) 2014-11-14
EP2801832B1 (de) 2024-03-27
EP2801832A2 (de) 2014-11-12
EP2801832A3 (de) 2018-01-17

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