CN104136652A - 利用预稳定等离子体的工艺的溅镀方法 - Google Patents

利用预稳定等离子体的工艺的溅镀方法 Download PDF

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Publication number
CN104136652A
CN104136652A CN201280070347.2A CN201280070347A CN104136652A CN 104136652 A CN104136652 A CN 104136652A CN 201280070347 A CN201280070347 A CN 201280070347A CN 104136652 A CN104136652 A CN 104136652A
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CN
China
Prior art keywords
substrate
deposition
plasma
sputtering
plasma body
Prior art date
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Pending
Application number
CN201280070347.2A
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English (en)
Chinese (zh)
Inventor
J·D·布施
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201810771113.XA priority Critical patent/CN108914076A/zh
Publication of CN104136652A publication Critical patent/CN104136652A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
CN201280070347.2A 2012-06-01 2012-06-01 利用预稳定等离子体的工艺的溅镀方法 Pending CN104136652A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201810771113.XA CN108914076A (zh) 2012-06-01 2012-06-01 利用预稳定等离子体的工艺的溅镀方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2012/060410 WO2013178288A1 (en) 2012-06-01 2012-06-01 Method for sputtering for processes with a pre-stabilized plasma

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201810771113.XA Division CN108914076A (zh) 2012-06-01 2012-06-01 利用预稳定等离子体的工艺的溅镀方法

Publications (1)

Publication Number Publication Date
CN104136652A true CN104136652A (zh) 2014-11-05

Family

ID=46320903

Family Applications (2)

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CN201810771113.XA Pending CN108914076A (zh) 2012-06-01 2012-06-01 利用预稳定等离子体的工艺的溅镀方法
CN201280070347.2A Pending CN104136652A (zh) 2012-06-01 2012-06-01 利用预稳定等离子体的工艺的溅镀方法

Family Applications Before (1)

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Country Status (7)

Country Link
US (1) US20150136585A1 (enExample)
EP (1) EP2855727A1 (enExample)
JP (1) JP2015519477A (enExample)
KR (1) KR20150016983A (enExample)
CN (2) CN108914076A (enExample)
TW (1) TW201402851A (enExample)
WO (1) WO2013178288A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109487225A (zh) * 2019-01-07 2019-03-19 成都中电熊猫显示科技有限公司 磁控溅射成膜装置及方法
CN110050325A (zh) * 2016-12-19 2019-07-23 应用材料公司 溅射沉积源以及将层沉积于基板上的方法

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TWI500796B (zh) * 2014-03-14 2015-09-21 China Steel Corp 鈍化層之製造方法
JP6535685B2 (ja) * 2014-03-18 2019-06-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 静的反応性スパッタ処理のための処理ガスセグメンテーション
KR102005540B1 (ko) * 2014-04-17 2019-07-30 어플라이드 머티어리얼스, 인코포레이티드 Pvd 어레이 코팅기들에서의 에지 균일성 개선
WO2016050284A1 (en) * 2014-09-30 2016-04-07 Applied Materials, Inc. Cathode sputtering mode
TWI567213B (zh) * 2015-07-08 2017-01-21 精曜科技股份有限公司 鍍膜載台及鍍膜裝置
WO2017032404A1 (en) * 2015-08-24 2017-03-02 Applied Materials, Inc. Apparatus for vacuum sputter deposition and method therefor
CN108138314A (zh) * 2015-09-21 2018-06-08 应用材料公司 基板载体、以及溅射沉积设备和其使用方法
KR102637922B1 (ko) * 2016-03-10 2024-02-16 에이에스엠 아이피 홀딩 비.브이. 플라즈마 안정화 방법 및 이를 이용한 증착 방법
JP6886020B2 (ja) * 2016-11-15 2021-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 移動基板の完全プラズマ被覆のための動的フェーズドアレイプラズマ源
WO2019001682A1 (en) * 2017-06-26 2019-01-03 Applied Materials, Inc. DISPLACEABLE MASKING MEMBER
EP3684962B1 (en) * 2017-09-20 2021-10-06 C4E Technology GmbH Method and device for carrying out a deposition process at the outer side and/or at the inner side of a body
JP6999380B2 (ja) * 2017-11-27 2022-01-18 株式会社アルバック スパッタ装置
JP7097740B2 (ja) * 2018-04-24 2022-07-08 東京エレクトロン株式会社 成膜装置および成膜方法
WO2020001762A1 (en) * 2018-06-27 2020-01-02 Applied Materials, Inc. Deposition apparatus, deposition system, and method of depositing a seed layer
JP7158098B2 (ja) 2018-07-31 2022-10-21 キヤノントッキ株式会社 成膜装置、および、電子デバイスの製造方法
JP7328744B2 (ja) 2018-07-31 2023-08-17 キヤノントッキ株式会社 成膜装置、および、電子デバイスの製造方法
CN115210846A (zh) * 2020-03-13 2022-10-18 瑞士艾发科技 采用直流脉冲阴极阵列的设备和方法
CN111334861A (zh) * 2020-04-03 2020-06-26 哈尔滨科友半导体产业装备与技术研究院有限公司 一种用于制备PVT法AlN籽晶的化学气相沉积外延装置及方法
CN115885057B (zh) * 2020-06-03 2025-09-16 应用材料公司 沉积设备、处理系统以及制造光电装置层的方法
CN116195027B (zh) * 2020-10-01 2025-11-04 应用材料公司 在基板上沉积材料的方法、被配置为能够连接到用于沉积材料的系统的控制器、和用于沉积材料的系统
CN113061857B (zh) * 2021-03-12 2023-01-13 浙江艾微普科技有限公司 一种离子辅助、倾斜溅射、反应溅射沉积薄膜的方法及设备
JP7672921B2 (ja) * 2021-08-30 2025-05-08 株式会社アルバック 成膜方法及び成膜装置
CN115747741A (zh) * 2022-11-17 2023-03-07 深圳市华星光电半导体显示技术有限公司 溅射镀膜设备

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Publication number Priority date Publication date Assignee Title
CN110050325A (zh) * 2016-12-19 2019-07-23 应用材料公司 溅射沉积源以及将层沉积于基板上的方法
CN110050325B (zh) * 2016-12-19 2021-11-09 应用材料公司 溅射沉积源、具有该溅射沉积源的溅射沉积设备以及将层沉积于基板上的方法
CN109487225A (zh) * 2019-01-07 2019-03-19 成都中电熊猫显示科技有限公司 磁控溅射成膜装置及方法

Also Published As

Publication number Publication date
CN108914076A (zh) 2018-11-30
KR20150016983A (ko) 2015-02-13
EP2855727A1 (en) 2015-04-08
TW201402851A (zh) 2014-01-16
WO2013178288A1 (en) 2013-12-05
US20150136585A1 (en) 2015-05-21
JP2015519477A (ja) 2015-07-09

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