CN104135253A - Circuit structure of narrow-pulse-width high-repetition-frequency pulse current source - Google Patents

Circuit structure of narrow-pulse-width high-repetition-frequency pulse current source Download PDF

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CN104135253A
CN104135253A CN201410324657.3A CN201410324657A CN104135253A CN 104135253 A CN104135253 A CN 104135253A CN 201410324657 A CN201410324657 A CN 201410324657A CN 104135253 A CN104135253 A CN 104135253A
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module
pulse
current
input
transistor
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CN104135253B (en
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周海兵
鲁华祥
陈刚
边昳
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Institute of Semiconductors of CAS
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Abstract

The invention discloses a circuit structure of a narrow-pulse-width high-repetition-frequency pulse current source. The circuit structure is characterized by comprising an adjustable reference voltage input module (1), a current source module (2), an adjustable narrow pulse generating and shaping module (3), a high-speed selection module (4) and a current mirror module (5), wherein the adjustable reference voltage input module (1), the current source module (2) and the current mirror module (5) are electrically connected in sequence; and the adjustable pulse generating and shaping module (3), the high-speed selection module (4) and the current mirror module (5) are electrically connected in sequence. By adopting the circuit structure, the pulse width, the current magnitude and the pulse frequency can be adjusted. Moreover, the circuit structure has the advantages of narrow pulse width, high repetition frequency, high current, small overshoot and steep leading edge.

Description

The circuit structure of the high repetitive frequency pulsed current source of a kind of narrow pulsewidth
Technical field
The present invention relates to semiconductor laser drive source technical field, in particular, relate to the pulse current source circuit structure of the low overshoot of the large electric current of a kind of narrow pulsewidth high repetition frequency.
Background technology
Development along with semiconductor laser manufacturing process and design level, repetition rate is high, forward position is fast, pulse width, semiconductor laser that peak power is high are applied widely in fields such as industry, military affairs, scientific researches, particularly in fields such as laser ranging, laser radar, laser communications.High-power semiconductor laser will obtain the light pulse of a macro-energy, narrow pulsewidth, just need a pulse current source that good driving can be provided, it not only requires the current impulse of output to have high repetition rate, fast rising edge, narrow pulse duration, certain amplitude, and the waveform of the current impulse of output must be smoothly, stablize.
At home, although there is the short duration current source that adopts avalanche transistor, thyratron or power MOS pipe, its output pulse width can reach nanosecond, but forward position of its output pulse signal, pulsewidth, frequency, peak current etc. are all limited to the parameter characteristic of transistor itself, can not arbitrarily regulate.Also there is the pulse current source adopting based on degree of depth Current Negative Three-Point Capacitance to realize the output of pulse current, but only limit to pulsewidth and the response time of Microsecond grade, cannot meet the characteristic of narrow pulsewidth, high repetition frequency
Summary of the invention
The technical problem to be solved in the present invention is, narrow not for the above-mentioned pulse current source circuit pulsewidth of prior art, repetition rate is not high enough, pulse height is large not, forward position is precipitous not, and the defect that overshoot is excessive provides a kind of pulse current source circuit structure, can regulating impulse width, size of current and pulse frequency, and have pulse width, repetition rate is high, and electric current is large, overshoot is little, the feature that forward position is precipitous.
The technical solution adopted for the present invention to solve the technical problems is: (need not manage)
Implement pulse current source circuit of the present invention, there is following beneficial effect:
1, use analog-digital chip that reference voltage is provided, by deep negative feedback circuit, realized Digital Control and the adjusting of output current size;
2, use pulse generate and shaping circuit, in conjunction with current-mirror structure, realized the Digital Control of current pulse width and pulse repetition frequency and adjusting;
3, utilize the special deep negative feedback circuit based on amplifier to produce constant-current source, utilize current mirroring circuit to carry out replica current, substantially completely cut off the impact of output loading on feedback constant current circuit, thereby make current source module output current more stable, further make current impulse more stable, forward position is more precipitous, and overshoot is less;
4, by the control to the current mirroring circuit of distortion, make the switching characteristic of pulse act on the control end of metal-oxide-semiconductor, rather than act directly on current circuit, thereby make the frequency of pulse current larger, pulsewidth is narrower, and forward position is more precipitous, and curent change scope is larger.
Accompanying drawing explanation
Fig. 1 is the system configuration schematic diagram of the pulse current source circuit of the low overshoot of the present invention's large electric current of narrow pulsewidth high repetition frequency;
Fig. 2 is the structural representation of adjustable reference voltage input module of the pulse current source circuit of the low overshoot of the present invention's large electric current of narrow pulsewidth high repetition frequency;
Fig. 3 is the principle schematic of current source module of the pulse current source circuit of the low overshoot of the present invention's large electric current of narrow pulsewidth high repetition frequency;
Fig. 4 is the adjustable pulse generation of pulse current source circuit of the low overshoot of the present invention's large electric current of narrow pulsewidth high repetition frequency and the structural representation of Shaping Module;
Fig. 5 is the principle schematic that the high speed of the pulse current source circuit of the low overshoot of the present invention's large electric current of narrow pulsewidth high repetition frequency is selected module and current mirror module.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further detail.
It should be noted that, in accompanying drawing or specification description, similar or identical part is all used identical figure number.And in the accompanying drawings, to simplify or convenient sign.Moreover the implementation that does not illustrate in accompanying drawing or describe, is form known to a person of ordinary skill in the art in affiliated technical field.In addition, although the demonstration of the parameter that comprises particular value can be provided herein, should be appreciated that, parameter is without definitely equaling corresponding value, but can in acceptable error margin or design constraint, be similar to corresponding value.
Refer to shown in Fig. 1, the invention provides the circuit structure of the pulse current source of the low overshoot of the large electric current of a kind of narrow pulsewidth high repetition frequency, comprising:
Adjustable reference voltage input module 1, current source module 2, adjustable pulse generation and Shaping Module 3, select at a high speed module 4, current mirror module 5.Wherein, described adjustable reference voltage input module 1, current source module 2, current mirror module 5 are electrically connected to successively, and described adjustable pulse generation and Shaping Module 3, high speed select module 4, current mirror module 5 to be electrically connected to successively.
Below each device of the pulse current source of the low overshoot of the large electric current of a kind of narrow pulsewidth high repetition frequency of the present invention is described further.
Adjustable reference voltage input module 1 is the input interface circuit of pulse current source, and its function is that the digital quantity of the specified current flow size of outside input is converted into voltage analog, to drive the current source module 2 of rear class.
The reference voltage amount that current source module 2 produces at reference voltage input module 1 by deep negative feedback principle, produces constant current stable, that size of current is definite under controlling, and its current amplitude is corresponding one by one with the output valve of reference voltage input module 1.
Adjustable pulse generation and Shaping Module 3 are also the input interface circuits of pulse current source, its function is that the specified current flow pulse duration of outside input and the digital quantity of pulse frequency are converted into concrete impulse waveform, and guarantee that edge is precipitous, to drive the high speed of rear class to select module 4.
Select at a high speed, under the control of pulse signal of specified pulse width that module 4 produces at adjustable pulse generation and Shaping Module 3 and frequency, to connect respectively the different signal of two-way.When pulse signal is low level, the power supply signal of this module gated current mirror module 5, when pulse signal is high level, the signal of the transistor PMOS1 of this module gated current mirror module 5, with the grid of the transistor PMOS2 of driven current mirror module 5.
The output interface circuit that current mirror module 5 is pulse current source, its function is the required pulse current of output.When select at a high speed module 4 outputs be power supply signal time, the grid voltage of transistor PMOS2 equals source voltage, now current-mirror structure is false, output no current, when select at a high speed module 4 outputs be the signal of transistor PMOS1 time, transistor PMOS1 and PMOS2 common gate, now form current-mirror structure, the electric current of replica current source module 2.
Below the structure of each device of the pulse current source of the low overshoot of the large electric current of a kind of narrow pulsewidth high repetition frequency of the present invention is described in detail.
With reference to figure 2, adjustable reference voltage input module 1 comprises: digital to analog converter 11 and operational amplifier 12; Wherein digital to analog converter 11, complete the highly corresponding digital quantity of current impulse to the conversion of corresponding analog quantity electric current, are connected with operational amplifier 12; Operational amplifier 12, complete the current analog amount of digital to analog converter 11 outputs to the conversion of voltage analog, be connected with the positive input of the operational amplifier U1 of current source module 2, analog to digital converter 11 is not had to specific (special) requirements herein, parallel or serial can, according to the stepping of actual current size adjustment, select the figure place of analog to digital converter 11.
With reference to figure 3, current source module 2 comprises: operational amplifier U1, and resistance R 1, R2, R3, Rs, capacitor C 1, C2, transistor NMOS1, has formed the deep negative feedback current source circuit based on operational amplifier, wherein resistance R 1 and capacitor C 1 parallel connection, the output of the input termination operational amplifier U1 of this parallel circuits, output is connected to the grid of transistor NMOS1, resistance R 2 and capacitor C 2 series connection, the reverse input end of the resistance termination operational amplifier U1 of this series circuit, capacitance terminal ground connection, resistance R 3 reverse input ends of concatenation operation amplifier U1 and the source electrode of transistor NMOS1, the source electrode of resistance R s mono-termination transistor NMOS1, one end ground connection, the drain electrode of transistor NMOS1 connects the input of current mirror module 5, the positive input of described operational amplifier U1 connects adjustable reference voltage input module 1.Wherein, described resistance R 1 and capacitor C 1 parallel connection can be introduced a zero point for the input of transistor NMOS1, thereby have eliminated the limit effect that NMOS1 grid source electric capacity is introduced.By Transient Technique, analyzed, C1 both end voltage can not be suddenlyd change, therefore the variation of amplifier U1 output voltage can be reacted to rapidly the grid of NMOS1, be that C1 makes to have shifted to an earlier date pi/2 for the current phase of grid source capacitor charging, therefore C1 has played the effect of speed-up capacitor, and its compensation is called accelerates compensation or lead compensation.
Wherein, suppose that the magnitude of voltage that adjustable reference voltage input module 1 is input to operational amplifier U1 positive input is U+, the magnitude of voltage of operational amplifier U1 reverse input end is U-,, according to the principle of operational amplifier " empty short ", has formula (1)
U+=U- (1)
Principle according to operational amplifier " empty disconnected ", does not have electric current to flow through in known resistance R 2 and resistance R 3, capacitor C 2 substantially, and making the voltage at sample resistance Rs two ends is Us, and the electric current flowing through is Is, has formula (2) (3)
Us=U- (2)
Is=Us/Rs (3)
According to formula (1), (2) and (3), we are known formula (4)
Is=Us/Rs=U-/Rs=U+/Rs (4)
This Is is the electric current of current source module 2 outputs.When the electric current of output is greater than Is, we the voltage U s at known Rs two ends will increase, the negative input voltage U of operational amplifier U1-also can increase, according to the operation principle of amplifier, the output voltage U o of amplifier will reduce, and the conducting resistance of transistor NMOS1 increases, thereby cause the electric current I s of output to reduce, vice versa, thereby reach the degenerative object of the degree of depth, thereby make the current stabilization of output at Is.
With reference to figure 4, adjustable pulse generation and Shaping Module 3 comprise: pulse-generating circuit 31 and pulse shaper 32; Wherein pulse-generating circuit 31 can generate the pulse of variable pulse width and variable pulse frequency, be connected with the input of pulse shaper 32, here the mode that pulse-generating circuit is realized has a lot, can realize with FPGA, can realize by the PWM module of the microcontrollers such as ARM, method is not limited to yet.Pulse shaper 32, can paired pulses produces the pulse that circuit 31 generates and carries out shaping, makes edge more precipitous, its output selects the input of module 4 to be connected with high speed, its general using logic gates at a high speed realizes, and such as the not gate with Schmidt trigger etc., method is also not limited to this.
With reference to figure 5, selecting module 4 is at a high speed alternative gates of a high speed, the break-make of either-or switch is controlled in the pulse of exporting by pulse shaper 32, two signal input part is connected with the signal of the power supply signal of current mirror module and the first transistor of current mirror module respectively, its control end is connected with the output of pulse shaper, the grid of the transistor seconds of its output termination current mirror module.When pulse is low level, its gating be the power supply signal of current mirror module 5, when pulse is high level, its gating be the signal of the transistor PMOS1 of current mirror module 5, the grid of the transistor PMOS2 of its output termination current mirror module 5.The alternative gate here can be analog switch at a high speed, can be the switching circuit that transistor is built, and method is not limited to.Current mirror module 5 adopts the current-mirror structure of distortion, comprise: transistor PMOS1 and transistor PMOS2, both can select the control of module 4 to make decision whether form current mirroring circuit at a high speed, the grid of transistor PMOS1 is connected with drain electrode, connect the output of current source module 2, the grid of transistor PMOS1 also with at a high speed selects the first input end of module 4 to be connected, and the source class of transistor PMOS1 is connected to the power supply signal VP of current mirror module 5; The grid of transistor PMOS2 is with selecting at a high speed the output of module 4 to be connected, and the drain electrode of transistor PMOS2 connects output, output pulse current.The source electrode of transistor PMOS2 selects the second input of module to be connected with high speed, is connected to the power supply signal VP of current mirror module 5; When described high speed selects module 4 to select to connect first input end and output, the grid of described transistor PMOS1 and PMOS2 is communicated with, form current mirroring circuit, and when described high speed selects module 4 to select to connect the second input and output, the power supply signal VP of described current mirror module 5 is connected to the grid of transistor PMOS2, and the grid of transistor PMOS2 and source electrode are communicated with; The current mirroring circuit is here not limited to the replica current of 1: 1, can become the replica current of multiple, only with equal proportion, copies as example here.
Wherein, if suppose that the electric current by PMOS1 is I sd1, by the electric current of PMOS2, be I sd2, according to the operation principle of current mirror, have formula (5)
I sd1=I sd2 (5)
Because the transistor PMOS1 in current mirror module 5 is the relation of connecting with the sampling resistor Rs in current source module 2, therefore there is formula (6) again
Is=I sd1=I sd2 (6)
Like this, we can know, when the pulse of adjustable pulse generation and Shaping Module 3 generations is high level, what select module 4 gatings at a high speed is the PMOS1 signal of current source module 5, now the grid of PMOS1 and PMOS2 is connected, formed current-mirror structure, according to formula (6), output current Is now, its width is identical with the width of pulse, when the pulse of pulse generation and Shaping Module 3 generations is low level, what select module 4 gatings at a high speed is the power supply signal of current source module 5, now the grid of PMOS2 is connected with source class, cannot form current-mirror structure, PMOS2 turn-offs, output current not now, the output current time is not identical with pulses low time width, in sum, generate required pulse current source.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of making, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (8)

1. the circuit structure of the high repetitive frequency pulsed current source of narrow pulsewidth, it is characterized in that, comprise that adjustable reference voltage input module (1), current source module (2), adjustable burst pulse produce and Shaping Module (3), select module (4) and current mirror module (5) at a high speed; Wherein, described adjustable reference voltage input module (1), current source module (2), current mirror module (5) are electrically connected to successively, and described adjustable pulse generation and Shaping Module (3), high speed select module (4), current mirror module (5) to be electrically connected to successively;
Described adjustable reference voltage input module is for being converted into reference voltage analog quantity by the digital quantity of the specified current flow size of outside input;
Under the reference voltage analog quantity that described current source module produces at reference voltage input module is controlled, by deep negative feedback principle, produce constant current, as the power supply signal of current mirror module;
Adjustable pulse generation and Shaping Module are converted into pulse signal by the specified current flow pulse duration of described outside input and the digital quantity of pulse frequency;
Select at a high speed, under the control of the pulse signal that module produces at adjustable pulse generation and Shaping Module, to select to connect the different input signal of two-way; The signal of the power supply signal that described two-way input signal is current mirror module and the first transistor of current mirror module;
Current mirror module, it comprises the first transistor and transistor seconds, when described high speed is selected module gating power signal, output current not, when the signal of the first transistor described in described high speed is selected module gating, described the first transistor and transistor seconds form current-mirror structure, and export after copying the electric current of described current source module.
2. circuit structure according to claim 1, is characterized in that, described adjustable reference voltage input module (1) comprising:
Digital to analog converter (11), for analog quantity electric current corresponding to digital quantity corresponding to described specified current flow pulse amplitude converting to;
Operational amplifier (12) is exported after the analog quantity current conversion of digital to analog converter (11) output is become to analog quantity voltage.
3. circuit structure according to claim 1, is characterized in that, described current source module (2) comprising:
Deep negative feedback current source circuit, comprising: operational amplifier, the first resistance, the second resistance, the 3rd resistance, sample resistance, the first electric capacity, the second electric capacity and the 3rd transistor, wherein said the first resistance and the first electric capacity form parallel circuits, the output of the input termination operational amplifier of this parallel circuits, output is connected to the 3rd transistorized grid, the second resistance becomes series circuit with the second capacitance group, the reverse input end of the resistance termination operational amplifier of this series circuit, capacitance terminal ground connection, the reverse input end of the 3rd resistance concatenation operation amplifier and the 3rd transistorized source electrode, sample resistance one termination the 3rd transistorized source electrode, one end ground connection, the 3rd transistorized drain electrode connects current mirror module, the positive input of described operational amplifier U1 connects the input of adjustable reference voltage input module.
4. circuit structure according to claim 1, is characterized in that, described adjustable pulse generation and Shaping Module comprise:
Pulse-generating circuit (31), for generating the pulse of variable pulse width and variable pulse frequency;
Pulse shaper (32), shaping is carried out in the pulse that produces circuit evolving for paired pulses, makes forward position precipitous, and its output selects the input of module to be connected with high speed.
5. circuit structure according to claim 1, it is characterized in that, it is the alternative gate of a high speed that described high speed is selected module, two input is connected with the signal of the power supply signal of current mirror module and the first transistor of current mirror module respectively, its control end is connected with the output of pulse shaper, the grid of the transistor seconds of its output termination current mirror module.
6. circuit structure according to claim 1, it is characterized in that, the grid of the first transistor of described current mirror module is connected with drain electrode, connect the output of current source module, the grid of the first transistor also with at a high speed selects an input of module to be connected, the grid of transistor seconds is with selecting at a high speed the output of module to be connected, and the drain electrode of transistor seconds connects output, for exporting pulse current.
7. circuit structure according to claim 5, is characterized in that, described high speed selects the source electrode of the first input end of module and the first transistor of described current mirror module and transistor seconds to be connected, and is connected to power supply signal; Described high speed is selected grid and the drain electrode of the second input termination the first transistor of module.
8. circuit structure according to claim 4, is characterized in that, described pulse-generating circuit adopts the PWM module of microcontroller to realize or adopts FPGA module to realize.
CN201410324657.3A 2014-07-09 2014-07-09 A kind of circuit structure of the high repetitive frequency pulsed current source of narrow spaces Active CN104135253B (en)

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CN107302321A (en) * 2017-07-10 2017-10-27 电子科技大学 A kind of pulse current source based on combined method
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CN110190505A (en) * 2019-05-30 2019-08-30 苏州贝林激光有限公司 The burst pulse drive system and its method of pulse laser
CN110492349A (en) * 2019-08-20 2019-11-22 上海禾赛光电科技有限公司 Driving circuit, driving method and Optical Maser System
CN111064450A (en) * 2019-12-11 2020-04-24 北京航天控制仪器研究所 Nanosecond SOA drive circuit and control method
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CN106611932B (en) * 2017-02-23 2019-12-27 成都麟鑫泰来科技有限公司 Pulse laser and pulse laser control method
CN106611932A (en) * 2017-02-23 2017-05-03 成都麟鑫泰来科技有限公司 Pulse laser and pulse laser control method
CN107302321A (en) * 2017-07-10 2017-10-27 电子科技大学 A kind of pulse current source based on combined method
CN108336923A (en) * 2018-04-13 2018-07-27 武汉华中华昌能源电气科技有限公司 A kind of impulse circuit and the Square wave pulses source with the impulse circuit
CN108336923B (en) * 2018-04-13 2023-10-20 武汉华中华昌能源电气科技有限公司 Pulse circuit and rectangular wave pulse source with same
CN108572690A (en) * 2018-07-25 2018-09-25 上海艾为电子技术股份有限公司 A kind of current mirroring circuit
CN108572690B (en) * 2018-07-25 2024-04-02 上海艾为电子技术股份有限公司 Current mirror circuit
CN110190505A (en) * 2019-05-30 2019-08-30 苏州贝林激光有限公司 The burst pulse drive system and its method of pulse laser
CN110492349A (en) * 2019-08-20 2019-11-22 上海禾赛光电科技有限公司 Driving circuit, driving method and Optical Maser System
WO2021031808A1 (en) * 2019-08-20 2021-02-25 上海禾赛光电科技有限公司 Drive circuit, drive method, transient enhanced ldo circuit, cmos driver power supply circuit and laser system
CN111064450A (en) * 2019-12-11 2020-04-24 北京航天控制仪器研究所 Nanosecond SOA drive circuit and control method
CN111431510A (en) * 2020-05-08 2020-07-17 恒为科技(上海)股份有限公司 Pulse signal generating circuit and electronic equipment
CN111431510B (en) * 2020-05-08 2023-04-21 恒为科技(上海)股份有限公司 Pulse signal generating circuit and electronic equipment
CN113346875A (en) * 2021-08-03 2021-09-03 中国工程物理研究院流体物理研究所 Stripe camera high-voltage scanning pulse generating device

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