CN202276061U - Continuous adjustable extra-narrow pulse semiconductor laser - Google Patents
Continuous adjustable extra-narrow pulse semiconductor laser Download PDFInfo
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- CN202276061U CN202276061U CN2011202513121U CN201120251312U CN202276061U CN 202276061 U CN202276061 U CN 202276061U CN 2011202513121 U CN2011202513121 U CN 2011202513121U CN 201120251312 U CN201120251312 U CN 201120251312U CN 202276061 U CN202276061 U CN 202276061U
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Abstract
Disclosed is a continuous adjustable extra-narrow pulse semiconductor laser, comprising a power supply system, an FPGA, a delay line device, a line driving device, an avalanche triode, a laser diode, and a potentiometer, wherein one end of the FPGA is provided with a communication interface capable of being connected with a host computer; the other end of the FPGA is connected with the delay line device, with the other end of the delay line device being connected with a line driving device; the other end of the line driving device is connected with the B pole of the avalanche triode; the C pole of the avalanche triode is connected with the laser diode; and the E pole of the avalanche triode is connected with the potentiometer. The delay line device, the line driving device, and the avalanche triode form a pulse driving circuit for the laser diode. Compared with the conventional pulse semiconductor laser, the pulse width is substantially narrowed, with the minimum pulse width being 5ns and the pulse width adjusting step being 0.25 ns. Moreover, the adjustable precision is greatly improved and the rising edge quality of the signal is further optimized. Therefore, the performance of the extra-narrow pulse laser is further improved and the technological index of the product is greatly raised. The continuous adjustable extra-narrow pulse semiconductor laser features simple structure, adjustable pulse width with software, and convenient usage.
Description
Technical field
The utility model relates to the narrow-pulse semiconductor laser technical field, relates in particular to a kind of adjustable ultra narrow-pulse semiconductor laser technical field continuously.
Background technology
Narrow-pulse semiconductor laser all has extensive use in fields such as industry, military affairs and scientific researches, all uses semiconductor laser like fields such as laser ranging, laser radar, laser communication and Fibre Optical Sensors.And at sensory field of optic fibre, in application such as optical fiber temperature-measurement, fiber-optic vibration measurement, the spatial resolution of laser is a very important techniques index.In numerous factors of decision spatial resolution, the pulse duration of the pulsed light of laser is a most important factor.Measure application facet at distributed optical fiber temperature measurement and distributed optical fiber vibration, the width of the pulsed light of laser is narrow more, and spatial resolution is then good more, shows that the location is accurate more.And in the prior art, be applied in the narrow-pulse semiconductor laser of distributed optical fiber temperature measurement and distributed optical fiber vibration measurement aspect, and also exist rising edge of a pulse narrow inadequately, pulse duration is narrow inadequately, and structure is simple inadequately, uses defectives such as operation makes things convenient for inadequately.Therefore, design continuously adjustable ultra narrow-pulse semiconductor laser and have great practical value and realistic meaning.
The utility model content
In order to solve the problem that exists in the prior art, the utility model provides a kind of adjustable ultra narrow-pulse semiconductor laser continuously.
In order to achieve the above object, the technical scheme that the utility model adopted is following:
A kind of adjustable ultra narrow-pulse semiconductor laser continuously comprises power-supply system, FPGA (field programmable logic device), delay line device, line drive spare, avalanche transistor, laser diode and potentiometer; FPGA one end is provided with a communication interface; This communication interface can be connected with host computer, and the other end of FPGA is connected with the delay line device, and the other end of delay line device is connected with line drive spare; The other end of line drive spare is connected with the B utmost point of avalanche transistor; The C utmost point of avalanche transistor is connected with laser diode, and the E utmost point of avalanche transistor is connected with potentiometer, and power-supply system is connected respectively with FPGA, delay line device, line drive spare, avalanche transistor utmost point laser diode.
Described delay line device, line drive spare and avalanche transistor are formed the pulse driving circuit of described laser diode.
Described delay line device model is DS1023s-25, or other can realize the model of similar functions.
Adopt the advantage of the described technical scheme of the utility model to be: to adopt delay line device, line drive spare and avalanche transistor to form the pulse driving circuit of laser diode; Make the I of signal pulse width reach 5ns; The adjusting step-length is 0.25ns, compares with existing impulse semiconductor laser, and pulsewidth narrows greatly; The adjustable precision of pulsewidth also increases substantially, and the rising edge quality of signal is further optimized.Therefore, aspect distributed optical fiber temperature measurement and vibration measurement, the performance of ultra narrow pulse laser further improves, and the technical indicator of product also greatly promotes; Simple in structure in addition, adjustable pulse repetition frequency of software and pulse duration, easy to use.
Description of drawings
Fig. 1 is the utility model structural representation;
Fig. 2 is the utility model operation principle sketch map;
Embodiment
Make detailed description below in conjunction with the described a kind of adjustable ultra narrow-pulse semiconductor laser continuously of 1,2 pairs of the utility model of accompanying drawing.
A kind of adjustable ultra narrow-pulse semiconductor laser continuously comprises power-supply system 1, FPGA2, delay line device 3, line drive spare 4, avalanche transistor 5, laser diode 6 and potentiometer 7; FPGA2 one end is provided with a communication interface; This communication interface can be connected with host computer; The other end of FPGA2 is connected with delay line device 3; The other end of delay line device 3 is connected with line drive spare 4, and the other end of line drive spare 4 is connected with the B utmost point of avalanche transistor 5, and the C utmost point of avalanche transistor 5 is connected with laser diode 6; The E utmost point of avalanche transistor 5 is connected with potentiometer 7, and power-supply system 1 is connected respectively with FPGA2, delay line device 3, line drive spare 4, avalanche transistor 5 and laser diode 6.
Described power-supply system 1 its function is for whole ultra narrow-pulse semiconductor laser power supply to be provided.
Its function of described FPGA2 is to produce the trigger impulse with repetition rate.When needing, the frequency that can regulate the trigger impulse that FPGA2 produces with the host computer that FPGA2 is connected through communication interface.
Described delay line device 3 selected models are DS1023s-25, and this model can realize minimum output pulse width 5ns, and the adjusting step-length is 0.25ns; As FPGA2 during to delay line device 3 input trigger impulses, its exportable with import pulse signal that trigger impulse has identical repetition rate, and pulse duration can be provided with through above-mentioned FPGA2 communication interface by upper computer software.
Described line drive spare 4, its function are to input driving force more weak pulse signal, export after strengthening its driving force, improve the rising edge of signal simultaneously, thereby obtain more perfect pulse signal.
Said 5 is avalanche transistor, and its function is to be used for driving said laser diode 6, realizes switching function simultaneously, thereby makes laser diode 6 be operated on off state.When pulse signal is input to the B utmost point of avalanche transistor 5, avalanche transistor 5 conductings, laser diode 6 work produce laser output; Otherwise when not having pulse signal to be input to the B utmost point of avalanche transistor 5, avalanche transistor 5 is closed, and laser diode 6 is not worked, and does not have laser output.
Said laser diode 6 sends laser when its function is work, the power of laser is by the operating current decision of flowing through laser diode 6, and operating current is to be regulated by the potentiometer 7 of the E utmost point that is connected said avalanche transistor 5.
The potentiometer 7 of said adjusting laser diode 6 operating currents, the resistance of regulator potentiometer 7 just can be regulated the operating current of laser diode 6.
Concrete operation principle and process are following:
Power-supply system 1 work; FPGA2 is a field programmable logic device; FPGA2 produces the trigger impulse of an adjustable repetitive frequency; This trigger impulse enters into delay line device 3, after the FPGA2 internal processes is received the password and parameter from the setting pulse duration of upper computer software, the inner related register of delay line device 3 will be set; Thereby the width of control delay line device 3 output pulses, and then 3 outputs of delay line device have ultra narrow pulse signal identical repetition rate, that pulse duration is adjustable with the input trigger impulse.
Said delay line device 3 selected models are DS1023s-25, and this model can realize minimum output pulse width 5ns, and the adjusting step-length is 0.25ns.
This ultra narrow pulse signal gets into line drive spare 5, and the generation driving force is stronger, the narrower ultra narrow pulse signal of rising edge; The ultra narrow pulse signal that this driving force is stronger, rising edge is narrower drives avalanche transistor 5, forms the switching signal of avalanche transistor 5, makes avalanche transistor 5 conductings; During avalanche transistor 5 conductings, be carried in semiconductor laser diode 6 work of the C utmost point of avalanche transistor 5, send laser; Adjusting is carried in the resistance of potentiometer 7 of the E utmost point of avalanche transistor 5, thereby can regulate the operating current of laser diode 6, and then regulates the output laser power of laser diode 6.
The final exportable adjustable repetitive frequency of laser, the I of pulse duration reaches 5ns, the adjusting step-length is the ultra narrow-pulse laser of 0.25ns, adjustable power.
Claims (3)
1. a continuous adjustable ultra narrow-pulse semiconductor laser is characterized in that: comprise power-supply system, FPGA, delay line device, line drive spare, avalanche transistor, laser diode and potentiometer; FPGA one end is provided with a communication interface; This communication interface can be connected with host computer, and the other end of FPGA is connected with the delay line device, and the other end of delay line device is connected with line drive spare; The other end of line drive spare is connected with the B utmost point of avalanche transistor; The C utmost point of avalanche transistor is connected with laser diode, and the E utmost point of avalanche transistor is connected with potentiometer, and power-supply system is connected respectively with FPGA, delay line device, line drive spare, avalanche transistor and laser diode.
2. a kind of adjustable ultra narrow-pulse semiconductor laser continuously according to claim 1 is characterized in that:
Described delay line device, line drive spare and avalanche transistor are formed the pulse driving circuit of described laser diode.
3. a kind of adjustable ultra narrow-pulse semiconductor laser continuously according to claim 1 is characterized in that:
Described delay line device model is DS1023s-25.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202513121U CN202276061U (en) | 2011-07-15 | 2011-07-15 | Continuous adjustable extra-narrow pulse semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202513121U CN202276061U (en) | 2011-07-15 | 2011-07-15 | Continuous adjustable extra-narrow pulse semiconductor laser |
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| Publication Number | Publication Date |
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| CN202276061U true CN202276061U (en) | 2012-06-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011202513121U Expired - Fee Related CN202276061U (en) | 2011-07-15 | 2011-07-15 | Continuous adjustable extra-narrow pulse semiconductor laser |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094833A (en) * | 2013-02-09 | 2013-05-08 | 复旦大学 | Pulse drive circuit of semiconductor laser based on avalanche transistor |
| CN104242043A (en) * | 2014-09-09 | 2014-12-24 | 武汉锐科光纤激光器技术有限责任公司 | Device for generating 1.8-2.3 ns laser pulse through FPGA |
| CN107946899A (en) * | 2017-12-22 | 2018-04-20 | 成都心无界光电技术有限公司 | A kind of laser source system |
-
2011
- 2011-07-15 CN CN2011202513121U patent/CN202276061U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103094833A (en) * | 2013-02-09 | 2013-05-08 | 复旦大学 | Pulse drive circuit of semiconductor laser based on avalanche transistor |
| CN104242043A (en) * | 2014-09-09 | 2014-12-24 | 武汉锐科光纤激光器技术有限责任公司 | Device for generating 1.8-2.3 ns laser pulse through FPGA |
| CN107946899A (en) * | 2017-12-22 | 2018-04-20 | 成都心无界光电技术有限公司 | A kind of laser source system |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120613 Termination date: 20150715 |
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| EXPY | Termination of patent right or utility model |