CN104135253B - A kind of circuit structure of the high repetitive frequency pulsed current source of narrow spaces - Google Patents
A kind of circuit structure of the high repetitive frequency pulsed current source of narrow spaces Download PDFInfo
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- CN104135253B CN104135253B CN201410324657.3A CN201410324657A CN104135253B CN 104135253 B CN104135253 B CN 104135253B CN 201410324657 A CN201410324657 A CN 201410324657A CN 104135253 B CN104135253 B CN 104135253B
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Abstract
The invention discloses a kind of circuit structure of the high repetitive frequency pulsed current source of narrow spaces, it is characterised in that it includes adjustable reference voltage input module (1), current source module (2), adjustable pulse produce and Shaping Module (3), high speed selecting module (4) and current mirror module (5)；Wherein, described adjustable reference voltage input module (1), current source module (2), current mirror module (5) are sequentially connected electrically, and described adjustable pulse is produced and Shaping Module (3), high speed selecting module (4), current mirror module (5) are sequentially connected electrically.The advantages of present invention can adjust pulse width, size of current and pulse frequency, and have pulse width, and repetition rate is high, and electric current is big, and overshoot is small, and forward position is precipitous.
Description
Technical field
The present invention relates to semiconductor laser drive source technical field, in particular, is related to a kind of high repetition of narrow spaces
The pulse current source circuit structure of the low overshoot of frequency high current.
Background technology
With the development of semiconductor laser manufacturing process and design level, repetition rate is high, forward position is fast, pulse width, peak
The high semiconductor laser of value power is applied widely in fields such as industry, military affairs, scientific researches, particularly laser ranging,
The fields such as laser radar, laser communication.High-power semiconductor laser will obtain the light pulse of one big energy, narrow spaces, just
The pulse current source well driven can be provided by needing one, and it, which does not require nothing more than the current impulse of output, high repetition rate, fast
Rising edge, narrow pulse width, certain amplitude, and the waveform of current impulse exported must smoothly, stably.
At home, although there is the short duration current source using avalanche transistor, thyratron or power MOS pipe, it exports arteries and veins
It is wide up to nanosecond, but the forward position of its output pulse signal, pulsewidth, frequency, peak point current etc. are all limited to transistor in itself
Parameter characteristic, it is impossible to arbitrarily regulation.Also have and the defeated of pulse current is realized using the pulse current source based on depth Current Negative Three-Point Capacitance
Go out, but be only limitted to pulsewidth and the response time of Microsecond grade, the characteristic of narrow spaces, high repetition frequency can not be met
The content of the invention
The technical problem to be solved in the present invention is, inadequate for the above-mentioned pulse current source circuit pulsewidth of prior art
Narrow, repetition rate is not high enough, and pulse height is not big enough, and forward position is not precipitous enough, overshoots the defects of excessive, there is provided a kind of pulse electricity
Current source circuit structure, pulse width, size of current and pulse frequency can be adjusted, and there is pulse width, repetition rate is high,
The characteristics of electric current is big, and overshoot is small, and forward position is precipitous.
The technical solution adopted for the present invention to solve the technical problems is：
Implement the pulse current source circuit of the present invention, have the advantages that：
1st, reference voltage is provided using analog-digital chip, the output current size by profound and negative feedbck circuit realiration
Digital Control and regulation；
2nd, using pulse generation and shaping circuit, with reference to current-mirror structure, realize to current pulse width and pulse
The Digital Control of repetition rate and regulation；
3rd, constant-current source is produced using the special profound and negative feedbck circuit based on amplifier, electricity is replicated using current mirroring circuit
Stream, influence of the output loading to feedback constant-current circuit is completely cut off substantially, so that current source module output current is more stable, has entered one
Step make it that current impulse is more stable, and forward position is more precipitous, and overshoot is smaller；
4th, by the control of the current mirroring circuit to deformation, the switching characteristic of pulse is made to act on the control terminal of metal-oxide-semiconductor, and
It is not to act directly on current loop, so that the frequency of pulse current is bigger, pulsewidth is narrower, and forward position is more precipitous, and electric current becomes
It is bigger to change scope.
Brief description of the drawings
Fig. 1 is the system architecture signal of the pulse current source circuit of the low overshoot of narrow spaces high repetition frequency high current of the present invention
Figure；
Fig. 2 is the adjustable reference voltage of the pulse current source circuit of the low overshoot of narrow spaces high repetition frequency high current of the present invention
The structural representation of input module；
Fig. 3 is the current source module of the pulse current source circuit of the low overshoot of narrow spaces high repetition frequency high current of the present invention
Principle schematic；
Fig. 4 is that the adjustable pulse of the pulse current source circuit of the low overshoot of narrow spaces high repetition frequency high current of the present invention produces
With the structural representation of Shaping Module；
Fig. 5 is the high speed selecting module of the pulse current source circuit of the low overshoot of narrow spaces high repetition frequency high current of the present invention
With the principle schematic of current mirror module.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in further detail.
It should be noted that in accompanying drawing or specification description, similar or identical part all uses identical figure number.And
In the accompanying drawings, with simplified or convenient sign.Furthermore the implementation for not illustrating or describing in accompanying drawing, it is art
In form known to a person of ordinary skill in the art.In addition, though the demonstration of the parameter comprising particular value can be provided herein, it is to be understood that
Parameter can be similar to be worth accordingly without being definitely equal to corresponding value in acceptable error margin or design constraint.
Refer to shown in Fig. 1, the present invention provides a kind of pulse current source of the low overshoot of narrow spaces high repetition frequency high current
Circuit structure, including：
Adjustable reference voltage input module 1, current source module 2, adjustable pulse produces and Shaping Module 3, selects mould at a high speed
Block 4, current mirror module 5.Wherein, described adjustable reference voltage input module 1, current source module 2, current mirror module 5 be successively
Electrical connection, described adjustable pulse is produced and Shaping Module 3, high speed selecting module 4, current mirror module 5 are sequentially connected electrically.
Below to the present invention a kind of low overshoot of narrow spaces high repetition frequency high current pulse current source each device
It is described further.
Adjustable reference voltage input module 1 is the input interface circuit of pulse current source, and its function is by outside input
The digital quantity of specified current flow size is converted into voltage analog, to drive the current source module 2 of rear class.
Current source module 2 passes through deep negative under reference voltage amount control caused by adjustable reference voltage input module 1
Feedback principle, produce the constant current stable, size of current determines, its current amplitude and adjustable reference voltage input module 1
Output valve correspond.
Adjustable pulse produces and the input interface circuit of Shaping Module 3 and pulse current source, and its function is will be outside defeated
The specified current flow pulse width and the digital quantity of pulse frequency entered is converted into specific impulse waveform, and ensures that edge is precipitous,
To drive the high speed selecting module 4 of rear class.
Pulse letter of the high speed selecting module 4 in specified pulse width and frequency caused by adjustable pulse generation and Shaping Module 3
Number control under, be respectively turned on the different signal of two-way.When pulse signal is low level, the module gated current mirror module 5
Power supply signal, when pulse signal is high level, the transistor PMOS1 of the module gated current mirror module 5 signal,
With the transistor PMOS2 of driven current mirror module 5 grid.
Current mirror module 5 is the output interface circuit of pulse current source, and its function is the required pulse current of output.Work as height
When what fast selecting module 4 exported is power supply signal, transistor PMOS2 grid voltage is equal to source voltage, now current mirror knot
Do not constitute it is vertical, export no current, when high speed selecting module 4 export be transistor PMOS1 signal when, transistor
PMOS1 and PMOS2 common gates, now form current-mirror structure, the electric current of replica current source module 2.
Below to the present invention a kind of low overshoot of narrow spaces high repetition frequency high current pulse current source each device
Structure be described in detail.
With reference to figure 2, adjustable reference voltage input module 1 includes：Digital analog converter 11 and operational amplifier 12；Wherein digital-to-analogue
Converter 11, complete current impulse and highly correspond to conversion of the digital quantity to corresponding analog quantity electric current, be connected with operational amplifier 12；
Operational amplifier 12, the current-mode analog quantity of the output of digital analog converter 11 is completed to the conversion of voltage analog, with current source module 2
Operational amplifier U1 positive input be connected, there is no particular/special requirement to analog-digital converter 11 herein, it is parallel or serial all
Can be with according to the digit of the stepping of the big minor adjustment of actual current selection analog-digital converter 11.
With reference to figure 3, current source module 2 includes：Operational amplifier U1, resistance R1, R2, R3, Rs, electric capacity C1, C2, transistor
NMOS1, constitute the profound and negative feedbck current source circuit based on operational amplifier；Wherein resistance R1 and electric capacity C1 is in parallel, and this is simultaneously
Join the input termination operational amplifier U1 of circuit output end, output end is connected to transistor NMOS1 grid, resistance R2 and electricity
Hold C2 series connection, the resistance termination operational amplifier U1 of series circuit reverse input end, capacitance terminal ground connection, resistance R3 connections fortune
Calculate amplifier U1 reverse input end and transistor NMOS1 source electrode, the termination transistor NMOS1 of resistance Rs mono- source electrode, one end
Ground connection, transistor NMOS1 drain electrode connect the input of current mirror module 5, and the positive input of the operational amplifier U1 connects can
Adjust reference voltage input module 1.Wherein, resistance R1 and electric capacity the C1 parallel connection can introduce for transistor NMOS1 input
One zero point, so as to eliminate the limit effect of NMOS1 gate-source capacitances introducing.Analyzed by Transient Technique, C1 both end voltages can not
Mutation, therefore the change of amplifier U1 output voltages can be reacted to NMOS1 grid rapidly, i.e. C1 makes the electricity for gate-source capacitance charging
Stream phase is advanced by pi/2, therefore C1 serves the effect of speed-up capacitor, and it, which is compensated, is referred to as accelerating compensation or lead compensation.
Where it is assumed that the magnitude of voltage that adjustable reference voltage input module 1 is input to operational amplifier U1 positive inputs is U
+, the magnitude of voltage of operational amplifier U1 reverse input ends is U-, then according to the principle of operational amplifier " empty short ", there is formula (1)
U+=U- (1)
According to the principle of operational amplifier " void is disconnected ", it is known that there is no electric current stream substantially in resistance R2 and resistance R3, electric capacity C2
Cross, the voltage for making sample resistance Rs both ends is Us, and the electric current flowed through is Is, then has formula (2) (3)
Us=U- (2)
Is=Us/Rs (3)
Then according to formula (1), (2) and (3), we understand there is formula (4)
Is=Us/Rs=U-/Rs=U+/Rs (4)
This Is is the electric current that current source module 2 exports.When the electric current of output is more than Is, we understand the electricity at Rs both ends
Pressure Us will increase, then operational amplifier U1 negative input voltage U- can also increase, and according to the operation principle of amplifier, then transport
The output voltage Uo put will be reduced, then transistor NMOS1 conducting resistance increase, so as to cause the electric current Is of output to reduce,
Vice versa, so as to reach the purpose of profound and negative feedbck, so that the electric current of output is stable in Is.
With reference to figure 4, adjustable pulse produces and Shaping Module 3 includes：Pulse-generating circuit 31 and pulse shaper 32；Its
Middle pulse-generating circuit 31 can generate the pulse of variable pulse width and variable pulsing frequency, defeated with pulse shaper 32
Enter end to be connected, the mode that pulse-generating circuit is realized here has a lot, can be realized with FPGA, can also use the microcontrollers such as ARM
The PWM module of device realizes that method is not limited to.Pulse shaper 32, the pulse that pulse-generating circuit 31 generates can be carried out
Shaping, make edge more precipitous, its output end is connected with the input of high speed selecting module 4, and it typically utilizes the gate of high speed
Circuit realiration, such as NOT gate with Schmidt trigger etc., method is also not limited to this.
With reference to figure 5, high speed selecting module 4 is the alternative gate of a high speed, is exported by pulse shaper 32
Pulse Width Control either-or switch break-make, two signal input part respectively with the power supply signal of current mirror module and
The signal of the first transistor of current mirror module is connected, and its control terminal is connected with the output end of pulse shaper, and its is defeated
Go out to terminate the grid of the second transistor of current mirror module.When pulse is low level, what it was gated is the confession of current mirror module 5
Electric power supply signal, when pulse is high level, what it was gated is the transistor PMOS1 of current mirror module 5 signal, and its is defeated
Go out to terminate the transistor PMOS2 of current mirror module 5 grid.Here alternative gate can be the analog switch of high speed,
Can be the on-off circuit that transistor is built, method is not limited to.Current mirror module 5 uses the current-mirror structure of deformation, including：It is brilliant
Body pipe PMOS1 and transistor PMOS2, both can make decision whether form current mirroring circuit in the control of high speed selecting module 4,
Transistor PMOS1 grid is connected with drain electrode, connects the output end of current source module 2, and transistor PMOS1 grid also selects with high speed
The first input end for selecting module 4 is connected, and transistor PMOS1 source electrode is connected to the power supply signal VP of current mirror module 5；Transistor
PMOS2 grid is connected with the output end of high speed selecting module 4, and transistor PMOS2 drain electrode connects output end, output pulse electricity
Stream.Transistor PMOS2 source electrode is connected with the second input of high speed selecting module, is connected to the power supply signal of current mirror module 5
VP；When the high speed selecting module 4 selects to connect first input end and output end, the grid of the transistor PMOS1 and PMOS2
Pole connects, and forms current mirroring circuit, and when the high speed selecting module 4 selects to connect the second input and output end, it is described
The power supply signal VP of current mirror module 5 is connected to transistor PMOS2 grid, and transistor PMOS2 grid connects with source electrode；This
In current mirroring circuit be not limited to 1: 1 replica current, can only be replicated here with equal proportion into the replica current of multiple
Exemplified by.
Wherein, if it is assumed that the electric current by PMOS1 is Isd1, the electric current by PMOS2 is Isd2, then according to current mirror
Operation principle, there is formula (5)
Isd1=Isd2 (5)
Again because the transistor PMOS1 in current mirror module 5 and the sampling resistor Rs in current source module 2 are the passes connected
System, therefore have formula (6)
Is=Isd1=Isd2 (6)
So, it can be appreciated that when pulse caused by adjustable pulse generation and Shaping Module 3 is high level, at a high speed
What selecting module 4 gated is the PMOS1 signals of current source module 5, then now PMOS1 is connected with PMOS2 grid, is formed
Current-mirror structure, according to formula (6), then now output current Is, its width is identical with the width of pulse, when adjustable pulse is produced
When pulse caused by raw and Shaping Module 3 is low level, what high speed selecting module 4 gated is the power supply signal of current source module 5,
Then now PMOS2 grid is connected with source electrode, can not form current-mirror structure, PMOS2 shut-offs, then now not output current, no
The output current time is identical with pulses low time width, in summary, then generates required pulse current source.
Particular embodiments described above, the purpose of the present invention, technical scheme and beneficial effect are carried out further in detail
Describe in detail bright, it should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., the protection of the present invention should be included in
Within the scope of.
Claims (8)
1. a kind of circuit structure of the high repetitive frequency pulsed current source of narrow spaces, it is characterised in that defeated including adjustable reference voltage
Enter module (1), current source module (2), adjustable pulse produces and Shaping Module (3), high speed selecting module (4) and current mirror mould
Block (5)；Wherein, described adjustable reference voltage input module (1), current source module (2), current mirror module (5) are electrically connected successively
Connect, described adjustable pulse is produced and Shaping Module (3), high speed selecting module (4), current mirror module (5) are sequentially connected electrically；
The adjustable reference voltage input module is used for electricity on the basis of the digital quantity conversion by the specified current flow size of outside input
Pressing mold analog quantity；
The current source module passes through depth under reference voltage Analog control caused by adjustable reference voltage input module
Negative-feedback principle, produce constant current, the power supply signal as current mirror module；
Adjustable pulse produces and Shaping Module converts the digital quantity of the specified current flow pulse width of outside input and pulse frequency
For pulse signal；
For high speed selecting module under the control of pulse signal caused by adjustable pulse generation and Shaping Module, two-way is connected in selection
Different input signals；Two-way input signal is respectively the power supply signal of current mirror module and the first transistor of current mirror module
Signal；
Current mirror module, it includes the first transistor and second transistor, in the high speed selecting module gating power signal,
Not output current, when the high speed selecting module gates the signal of the first transistor, the first transistor and
Second transistor forms current-mirror structure, and is exported after replicating the electric current of the current source module.
2. circuit structure according to claim 1, it is characterised in that the adjustable reference voltage input module (1) includes：
Digital analog converter (11), for the digital quantity of the specified current flow pulse width of outside input to be converted into corresponding analog quantity
Electric current；
Operational amplifier (12), the analog quantity electric current for digital analog converter (11) to be exported are converted into defeated after analog quantity voltage
Go out.
3. circuit structure according to claim 1, it is characterised in that the current source module (2) includes：
Profound and negative feedbck current source circuit, including：Operational amplifier U1, first resistor, second resistance, 3rd resistor, sampling electricity
Resistance, the first electric capacity, the second electric capacity and third transistor；Wherein described first resistor and the first electric capacity form parallel circuit, and this is simultaneously
Join the output end of the input termination operational amplifier of circuit, output end is connected to the grid of third transistor, second resistance and the
Two capacitance groups are grounded into series circuit, the reverse input end of the resistance termination operational amplifier of the series circuit, capacitance terminal, and the 3rd
The reverse input end of resistance concatenation operation amplifier and the source electrode of third transistor, sample resistance one terminate the source of third transistor
Pole, one end ground connection, the drain electrode of third transistor connect current mirror module, and the positive input of the operational amplifier U1 connects adjustable substrate
The input of quasi- voltage input module.
4. circuit structure according to claim 1, it is characterised in that the adjustable pulse produces and Shaping Module includes：
Pulse-generating circuit (31), for generating the pulse of variable pulse width and variable pulsing frequency；
Pulse shaper (32), the pulse for being generated to pulse-generating circuit carry out shaping, make forward position precipitous, its output end
It is connected with the input of high speed selecting module.
5. circuit structure according to claim 4, it is characterised in that the high speed selecting module is two choosings of a high speed
One gate, two input respectively with the power supply signal of current mirror module and the grid of the first transistor of current mirror module
Pole signal is connected, and its control terminal is connected with the output end of pulse shaper, and it exports the second crystal of termination current mirror module
The grid of pipe.
6. circuit structure according to claim 1, it is characterised in that the grid of the first transistor of the current mirror module
It is connected with drain electrode, connects the output end of current source module, the input of the grid of the first transistor also with high speed selecting module
It is connected, the grid of second transistor is connected with the output end of high speed selecting module, and the drain electrode of second transistor connects output end, is used for
Export pulse current.
7. circuit structure according to claim 5, it is characterised in that the first input end of the high speed selecting module and institute
State the first transistor of current mirror module with the source electrode of second transistor to be connected, and be connected to power supply signal；The high speed selects mould
The grid of second input termination the first transistor of block and drain electrode.
8. circuit structure according to claim 4, it is characterised in that the pulse-generating circuit is using microcontroller
PWM module is realized or realized using FPGA module.
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| CN201410324657.3A CN104135253B (en) | 2014-07-09 | 2014-07-09 | A kind of circuit structure of the high repetitive frequency pulsed current source of narrow spaces |
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| CN201410324657.3A CN104135253B (en) | 2014-07-09 | 2014-07-09 | A kind of circuit structure of the high repetitive frequency pulsed current source of narrow spaces |
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| CN104135253B true CN104135253B (en) | 2017-11-24 |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106611932B (en) * | 2017-02-23 | 2019-12-27 | 成都麟鑫泰来科技有限公司 | Pulse laser and pulse laser control method |
| CN107302321B (en) * | 2017-07-10 | 2019-05-03 | 电子科技大学 | A kind of pulse current source based on combined method |
| CN108336923B (en) * | 2018-04-13 | 2023-10-20 | 武汉华中华昌能源电气科技有限公司 | Pulse circuit and rectangular wave pulse source with same |
| CN108572690B (en) * | 2018-07-25 | 2024-04-02 | 上海艾为电子技术股份有限公司 | Current mirror circuit |
| WO2021031808A1 (en) * | 2019-08-20 | 2021-02-25 | 上海禾赛光电科技有限公司 | Drive circuit, drive method, transient enhanced ldo circuit, cmos driver power supply circuit and laser system |
| CN112769035A (en) * | 2019-08-20 | 2021-05-07 | 上海禾赛科技股份有限公司 | Drive circuit, drive method and laser system |
| CN111064450B (en) * | 2019-12-11 | 2023-07-14 | 北京航天控制仪器研究所 | Nanosecond SOA driving circuit and control method |
| CN111431510B (en) * | 2020-05-08 | 2023-04-21 | 恒为科技（上海）股份有限公司 | Pulse signal generating circuit and electronic equipment |
| CN113346875B (en) * | 2021-08-03 | 2021-11-02 | 中国工程物理研究院流体物理研究所 | Stripe camera high-voltage scanning pulse generating device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101895058A (en) * | 2010-07-07 | 2010-11-24 | 中国科学院上海光学精密机械研究所 | High-speed narrow pulse modulation driving power supply for semiconductor laser |
| CN103474873A (en) * | 2013-09-06 | 2013-12-25 | 中国科学院半导体研究所 | Narrow-pulse-width high-power semiconductor laser device driving circuit |
-
2014
- 2014-07-09 CN CN201410324657.3A patent/CN104135253B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101895058A (en) * | 2010-07-07 | 2010-11-24 | 中国科学院上海光学精密机械研究所 | High-speed narrow pulse modulation driving power supply for semiconductor laser |
| CN103474873A (en) * | 2013-09-06 | 2013-12-25 | 中国科学院半导体研究所 | Narrow-pulse-width high-power semiconductor laser device driving circuit |
Non-Patent Citations (2)
| Title |
|---|
| Design of a High Precision Current Source;Yu Peng等;《The Ninth International Conference on Electronic Measurement & Instruments》;20090819;第1-1065 – 1-1069页 * |
| Design of Constant Current Source Based on Pulse Width Modulation;Sun Li-hui等;《Advanced Materials Research》;20130111;第645卷;第418-421页 * |
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